阅读说明：本技术 一种基于电感储能形成线的纳秒短脉冲功率调制拓扑结构及调制方法 (Nanosecond short pulse power modulation topological structure and modulation method based on inductive energy storage forming line ) 是由 余亮 马剑豪 姚陈果 董守龙 于 2021-08-19 设计创作，主要内容包括：本发明公开一种基于电感储能形成线的纳秒短脉冲功率调制拓扑结构及调制方法,拓扑结构包括调制电阻R-(con)、电容C、电源U-(dc)、调制开关M-(cut)、负载R-(load)、主开关M-(main)、电感储能形成线；调制方法通过调制开关M-(cut)、主开关M-(main)的通断实现。本发明公开的脉冲发生器可以几纳秒到几十纳秒的脉冲宽度连续调制,且在5ns-(～)20ns内连续可调。(The invention discloses a nanosecond short pulse power modulation topological structure and a modulation method based on an inductive energy storage forming line, wherein the topological structure comprises a modulation resistor R con Capacitor C and power supply U dc Modulation switch M cut Load R load Main switch M main The inductance energy storage forms a line; modulation method by modulating switch M cut Main switch M main The on-off of the switch is realized. The pulse generator disclosed by the invention can be continuously modulated with the pulse width of several nanoseconds to dozens of nanoseconds, and is 5ns ～ Is continuously adjustable within 20 ns.)

1. A nanosecond short pulse power series modulation topological structure based on inductive energy storage forming line is characterized in that: comprising a modulation resistor R_conThe failure debugging diode D_conCapacitor C and power supply U_dcModulation switch M_cutLoad R_loadMain switch M_mainAnd the inductance energy storage forms a line.

Power source U_dcOne end of the anode is F, and one end of the cathode is H;

the F end is connected with a main switch M in series_mainThen grounding;

h-end sequentially connected in series with modulation switch M_cutAnd a load R_loadThen grounding;

the H end is sequentially connected with a capacitor C and a main switch M in series_mainThen grounding;

h-terminal series modulation resistor R_conThen grounding; h-terminal connection failure debugging diode D_conA cathode of (a); failure debugging diode D_conThe anode of (2) is grounded;

recording two ends of an inductance energy storage forming line as an A point and a B point respectively; a point series modulation resistor R_conRear grounding, point B is connected in series with modulation switch M in turn_cutAnd a load R_loadAnd then grounded.

2. The nanosecond short pulse power series modulation topology based on inductive energy storage forming line as claimed in claim 1, wherein: the modulation switch M_cutIs a MOSFET switching tube, wherein the modulation switch M_cutThe grid electrode is suspended, the source electrode is connected with the H end, and the drain electrode is connected with a load R in series_loadAnd then grounded.

3. A nanosecond short pulse power series modulation method based on inductive energy storage forming line according to any of claims 1-2, comprising the steps of:

1) at t₁Time command main switch M_mainSwitch M is turned off and modulated_cutClosing to change the state of point B from short-circuit state to G_LoadIn the state, the point B of the inductive energy storage forming line generates the refraction and reflection of the wave;

t₁at time, forward current i of B point state_2fReverse current i between points A and B_1bRespectively as follows:

in the formula, Y1 and Y2 represent impedance states of an inductive energy storage forming line and a point B, respectively; i.e. i₀Is the initial current;

2) at time l, the modulation switch M is opened_cutClosing the main switch M_mainWhen the reflected wave reaches the point A, the catadioptric wave occurs at the point A, and the catadioptric wave does not occur at the point B;

at this time, the catadioptric current equation at point a is as follows:

in the formula i_lFor modulating the switch M_cutBreaking the current propagated from the point B to the point A before breaking; y0 is the impedance state at point A; i.e. i_0f、i_1bRespectively representing the current of a point B and a point A;

3) after a period of time l, the impedance state at point B is Y₂Infinity, point B is totally refracted, current direction is changed, and the diode D is debugged through failure_conAct on the modulation resistor R_conForming a modulation pulse width with the time length of l;

at this time, the equation of the electromagnetic wave from point a to point B is as follows:

in the formula i_2lThe forward current is the forward current of the point A before the arrival of the current moment;

4. root of herbaceous plantNanosecond short-pulse power series modulation method based on an inductive energy storage forming line as claimed in claim 3, characterized in that t is₁At time B point load-matched catadioptric, i.e. Y₂＝Y₁。

5. The nanosecond short pulse power series modulation method based on inductive energy storage forming line as claimed in claim 3, wherein impedance state equations of point A and point B are respectively as follows:

6. a nanosecond short pulse power parallel modulation topological structure based on inductive energy storage forming lines is characterized in that: comprising a modulation resistor R_conCapacitor C and power supply U_dcModulation switch M_cutLoad R_loadMain switch M_mainThe inductance energy storage forms a line;

power source U_dcOne end of the anode is F, and one end of the cathode is H;

the F end is connected with a main switch M in series_mainThen grounding;

h-end series load R_loadThen grounding;

the H end is sequentially connected with a capacitor C and a main switch M in series_mainThen grounding;

h-terminal series modulation resistor R_conThen grounding; h-terminal series modulation switch M_cutThen grounding;

recording two ends of an inductance energy storage forming line as an A point and a B point respectively; a point series modulation switch M_cutRear earth, point B series load regulation R_loadAnd then grounded.

7. The nanosecond short pulse power parallel modulation topology based on inductive energy storage forming line as claimed in claim 6, wherein: the modulation switch M_cutIs a MOSFET switching tube, wherein the modulation switch M_cutThe grid electrode is suspended, and the source electrodeAnd the drain is connected with the H end.

8. The nanosecond short pulse power parallel modulation topology based on inductive energy storage forming line as claimed in claim 1 or 6, wherein: the main switch M_mainIs a MOSFET switching tube, wherein, the main switch M_mainThe grid electrode is suspended, the drain electrode is connected with the F end, and the source electrode is grounded.

9. The nanosecond short pulse power parallel modulation method based on inductive energy storage forming line as claimed in any one of claims 6 to 8, comprising the steps of:

1) at t₁Time command main switch M_mainSwitch M is turned off and modulated_cutClosing, and forming refraction and reflection generated by a line through inductive energy storage;

2) at time l/2, the modulation switch M is turned off_cutClosing the main switch M_mainThe inductive energy storage forming line has two current waves with opposite directions and the same magnitude in one propagation period, so that the modulation resistor R_conForming a modulation pulse width with the time length of 2 l;

one propagation period start time t₁The current waves of (a) are as follows:

end time t of a propagation cycle₁The current waves of (a) are as follows:

10. the nanosecond short pulse power parallel modulation method based on inductive energy storage forming line as claimed in claim 9, wherein impedance state equations of point a and point B are respectively as follows:

Technical Field

The invention relates to the field of pulse generation, in particular to a nanosecond short pulse power modulation topological structure and a modulation method based on an inductive energy storage forming line.

Background

Compared with the common capacitive energy storage topology of the pulse generator, the inductive energy storage has higher energy density and smaller physical size. However, the inductive energy storage topology is controlled by a circuit breaker, and square wave output and pulse width modulation of the pulse generator are difficult to realize, so that the application range of the inductive energy storage in the pulse generator is greatly limited.

The existing pulse generator is difficult to simultaneously meet the problems of short pulse, square wave and pulse width modulation;

the pulse generator based on the inductive energy storage forming line structure is difficult to realize the pulse width modulation problem under the square wave condition.

Disclosure of Invention

The invention aims to provide a nanosecond short pulse power series modulation topological structure based on an inductive energy storage forming line, which comprises a modulation resistor R_conFailure debugging diode D_conCapacitor C and power supply U_dcModulation switch M_cutLoad R_loadMain switch M_mainAnd the inductance energy storage forms a line.

Power source U_dcThe end of the anode is F, and the end of the cathode is H.

The F end is connected with a main switch M in series_mainAnd then grounded.

H-end sequentially connected in series with modulation switch M_cutAnd a load R_loadAnd then grounded.

The H end is sequentially connected with a capacitor C and a main switch M in series_mainAnd then grounded.

H-terminal series modulation resistor R_conAnd then grounded. H-terminal connection failure debugging diode D_conThe cathode of (1). Failure debugging diode D_conThe anode of (2) is grounded.

And recording two ends of the inductance energy storage forming line as an A point and a B point respectively. A point series modulation resistor R_conRear grounding, point B is connected in series with modulation switch M in turn_cutAnd a load R_loadAnd then grounded.

The modulation switch M_cutIs a MOSFET switching tube, wherein the modulation switch M_cutThe grid electrode is suspended, the source electrode is connected with the H end, and the drain electrode is connected with a load R in series_loadAnd then grounded.

The main switch M_mainIs a MOSFET switching tube, wherein, the main switch M_mainThe grid electrode is suspended, the drain electrode is connected with the F end, and the source electrode is grounded.

A nanosecond short pulse power series modulation method based on inductive energy storage forming lines comprises the following steps:

1) and recording two ends of the inductance energy storage forming line as an A point and a B point respectively.

At t₁Time command main switch M_mainSwitch M is turned off and modulated_cutClosing to change the state of point B from short-circuit state to G_LoadIn the state, the point B of the line formed by the inductive energy storage generates the refraction and reflection of the wave.

t₁At time, forward current i of B point state_2fReverse current i between points A and B_1bRespectively as follows:

in the formula, Y1 and Y2 represent impedance states of the inductive energy storage forming line and B point, respectively. i.e. i₀Is the initial current.

t₁At time B point load-matched catadioptric, i.e. Y₂＝Y₁。

2) At time l, the modulation switch M is opened_cutClosing the main switch M_mainWhen the reflected wave reaches the point A, the refraction and reflection occur at the point A, and the refraction and reflection do not occur at the point B.

At this time, the catadioptric current equation at point a is as follows:

in the formula i_lFor modulating the switch M_cutThe current that propagates to point a at point B before switching off. Y0 is the impedance state at point a. i.e. i_0f、i_1bThe currents at points B and a are shown, respectively.

3) After a period of time l, the impedance state at point B is Y₂Infinity, point B is totally refracted, current direction is changed, and the diode D is debugged through failure_conAct on the modulation resistor R_conThe modulated pulse width is formed with a time length of l.

At this time, the equation of the electromagnetic wave from point a to point B is as follows:

in the formula i_2lThe current is the forward current of the point A before the current moment.

The impedance state equations at points a and B are respectively as follows:

a nanosecond short pulse power parallel modulation topological structure based on inductive energy storage forming line comprises a modulation resistor R_conCapacitor C and power supply U_dcModulation switch M_cutLoad R_loadMain switch M_mainAnd the inductance energy storage forms a line.

Power source U_dcThe end of the anode is F, and the end of the cathode is H.

The F end is connected with a main switch M in series_mainAnd then grounded.

H-end series load R_loadAnd then grounded.

The H end is sequentially connected with a capacitor C and a main switch M in series_mainAnd then grounded.

H-terminal series modulation resistor R_conAnd then grounded. H-terminal series modulation switch M_cutAnd then grounded.

And recording two ends of the inductance energy storage forming line as an A point and a B point respectively. A point series modulation switch M_cutRear earth, point B series load regulation R_loadAnd then grounded.

The modulation switch M_cutIs a MOSFET switching tube, wherein the modulation switch M_cutThe grid electrode is suspended, the source electrode is grounded, and the drain electrode is connected with the H end.

The main switch M_mainIs a MOSFET switching tube, wherein, the main switch M_mainThe grid electrode is suspended, the drain electrode is connected with the F end, and the source electrode is grounded.

A nanosecond short pulse power parallel modulation method based on inductive energy storage forming lines comprises the following steps:

1) and recording two ends of the inductance energy storage forming line as an A point and a B point respectively.

At t₁Time command main switch M_mainSwitch M is turned off and modulated_cutAnd when the circuit is closed, the inductive energy storage forms refraction and reflection generated by the wire.

2) At time l/2, the modulation switch M is turned off_cutClosing the main switch M_mainThe inductive energy storage forming line has two current waves with opposite directions and the same magnitude in one propagation period, so that the modulation resistor R_conThe modulation pulse width is formed with a time length of 2 l.

One propagation period start time t₁The current waves of (a) are as follows:

end time t of a propagation cycle₁The current waves of (a) are as follows:

the impedance state equations at points a and B are respectively as follows:

the technical effect of the invention is undoubted, and the invention provides inductive energy storage forming line pulse width series modulation and parallel modulation topologies.

The pulse generator disclosed by the invention can continuously modulate the pulse width of a few nanoseconds to a few tens of nanoseconds, and is continuously adjustable within 5ns to 20 ns.

M in parallel modulation topology of the invention_mainAnd M_conThe same ground potential is provided, which also means that the switch design of the parallel modulation topology has a more stable driving environment in the circuit design.

Drawings

Fig. 1 is an inductive energy storage forming line pulse width modulation topology-series modulation topology (SIE _ PFL);

fig. 2 is an inductive energy storage forming line pulse width modulation topology-parallel modulation topology (PIE _ PFL);

FIG. 3 illustrates the refraction and reflection of the electromagnetic wave at the SIE _ PFL node;

FIG. 4 is a control and output waveform of a SIE _ PFL series modulation topology;

FIG. 5 shows electromagnetic wave refraction and reflection at the PIE _ PFL node;

FIG. 6 is a control and output waveform of a PIE _ PFL parallel modulation type topology;

FIG. 7 is a pulse modulation waveform at the output load end of a series modulation topology;

FIG. 8 is a pulse waveform of a modulation end modulation load of a series modulation type topology;

FIG. 9 is a series modulation topology object circuit;

FIG. 10 shows the results of a series modulation topology PWM experiment;

fig. 11 is a pulse modulation waveform of an output load terminal of a parallel modulation type topology;

FIG. 12 is a pulse waveform of a modulation end modulation load of a parallel modulation type topology;

FIG. 13 is a parallel modulation topology object circuit;

FIG. 14 is a graph of parallel modulation topology pulse width modulation experimental results;

FIG. 15 is a schematic circuit diagram of a parallel modulation topology using ultrafast gate drive and switch packages designed according to this embodiment;

FIG. 16 is a waveform of charging current in an inductive energy storage forming linear single module; FIG. 16(a) is a charging current full waveform; FIG. 16(b) is an enlargement of the charging current plateau;

FIG. 17 is a parallel modulation topology modulation waveform for ultrafast gate drive and switch packaging;

FIG. 18 is a quasi-square wave pulse with a pulse width of 5.1ns after modulation;

FIG. 19 is a non-square wave pulse with a pulse width of 4.3ns after modulation;

FIG. 20 is a validation of the proposed topology in a federated multi-module overlay approach;

FIG. 21 shows PWM waveforms for 5-level stack

FIG. 22 is a 50kHz repetition rate operating waveform for a 10 level stack.

Detailed Description

The present invention is further illustrated by the following examples, but it should not be construed that the scope of the above-described subject matter is limited to the following examples. Various substitutions and alterations can be made without departing from the technical idea of the invention and the scope of the invention is covered by the present invention according to the common technical knowledge and the conventional means in the field.

Example 1:

referring to fig. 1, 3 and 4, a nanosecond short pulse power series modulation topology based on inductive energy storage forming line includes a modulation resistor R_conFailure debugging diode D_conCapacitor C and power supply U_dcModulation switch M_cutLoad R_loadMain switch M_mainInductive energy storage forming line (Z)_save)。

Power source U_dcThe end of the anode is F, and the end of the cathode is H. The power supply U_dcIs a voltage source.

The F end is connected with a main switch M in series_mainAnd then grounded.

H-end sequentially connected in series with modulation switch M_cutAnd a load R_loadAnd then grounded.

The H end is sequentially connected with a capacitor C and a main switch M in series_mainAnd then grounded.

H-terminal series modulation resistor R_conAnd then grounded. H-terminal connection failure debugging diode D_conThe cathode of (1). Failure debugging diode D_conThe anode of (2) is grounded.

And recording two ends of the inductance energy storage forming line as an A point and a B point respectively. A point series modulation resistor R_conRear grounding, point B is connected in series with modulation switch M in turn_cutAnd a load R_loadAnd then grounded.

The modulation switch M_cutIs a MOSFET switching tube, wherein the modulation switch M_cutThe grid electrode is suspended, the source electrode is connected with the H end, and the drain electrode is connected with a load R in series_loadAnd then grounded.

The main switch M_mainIs a MOSFET switching tube, wherein, the main switch M_mainThe grid electrode is suspended, the drain electrode is connected with the F end, and the source electrode is grounded.

Example 2:

a nanosecond short pulse power series modulation method based on inductive energy storage forming lines comprises the following steps:

1) and recording two ends of the inductance energy storage forming line as an A point and a B point respectively.

At t₁Time command main switch M_mainSwitch M is turned off and modulated_cutClosing to change the state of point B from short-circuit state to G_LoadIn the state, the point B of the line formed by the inductive energy storage generates the refraction and reflection of the wave. G_LoadThe state represents the admittance form of the load resistance.

t₁At time, forward current i of B point state_2fReverse current i between points A and B_1bRespectively as follows:

in the formula, Y1 and Y2 represent impedance states of the inductive energy storage forming line and B point, respectively. i.e. i₀Is the initial current.

t₁At time B point load-matched catadioptric, i.e. Y₂＝Y₁。

2) At time l, the modulation switch M is opened_cutClosing the main switch M_mainWhen the reflected wave reaches the point A, the refraction and reflection occur at the point A, and the refraction and reflection do not occur at the point B.

At this time, the catadioptric current equation at point a is as follows:

in the formula i_lFor modulating the switch M_cutThe current that propagates to point a at point B before switching off. Y0 is the impedance state at point a. i.e. i_0f、i_1bRespectively represent point B and point AThe current of the spot.

3) After a period of time l, the impedance state at point B is Y₂Infinity, point B is totally refracted, current direction is changed, and the diode D is debugged through failure_conAct on the modulation resistor R_conThe modulated pulse width is formed with a time length of l.

At this time, the equation of the electromagnetic wave from point a to point B is as follows:

in the formula i_2lThe current is the forward current of the point A before the current moment.

The impedance state equations at points a and B are respectively as follows:

example 3:

referring to fig. 2, 5 and 6, the nanosecond short pulse power parallel modulation topology based on inductive energy storage forming line includes a modulation resistor R_conCapacitor C and power supply U_dcModulation switch M_cutLoad R_loadMain switch M_mainInductive energy storage forming line (Z)_save)。

Power source U_dcThe end of the anode is F, and the end of the cathode is H.

The F end is connected with a main switch M in series_mainAnd then grounded.

H-end series load R_loadAnd then grounded.

The H end is sequentially connected with a capacitor C and a main switch M in series_mainAnd then grounded.

H-terminal series modulation resistor R_conAnd then grounded. H-terminal series modulation switch M_cutAnd then grounded.

And recording two ends of the inductance energy storage forming line as an A point and a B point respectively. A point series modulation switch M_cutRear earth, point B series load regulation R_loadAnd then grounded.

The modulation switch M_cutIs a MOSFET switching tube, wherein the modulation switch M_cutThe grid electrode is suspended, the source electrode is grounded, and the drain electrode is connected with the H end.

The main switch M_mainIs a MOSFET switching tube, wherein, the main switch M_mainThe grid electrode is suspended, the drain electrode is connected with the F end, and the source electrode is grounded.

Example 4:

a nanosecond short pulse power parallel modulation method based on inductive energy storage forming lines comprises the following steps:

1) and recording two ends of the inductance energy storage forming line as an A point and a B point respectively.

At t₁Time command main switch M_mainSwitch M is turned off and modulated_cutAnd when the circuit is closed, the inductive energy storage forms refraction and reflection generated by the wire.

2) At time l/2, the modulation switch M is turned off_cutClosing the main switch M_mainThe inductive energy storage forming line has two current waves with opposite directions and the same magnitude in one propagation period, so that the modulation resistor R_conThe modulation pulse width is formed with a time length of 2 l.

One propagation period start time t₁The current waves of (a) are as follows:

end time t of a propagation cycle₁The current waves of (a) are as follows:

the impedance state equations at points a and B are respectively as follows:

example 5:

a nanosecond short pulse power series modulation topological structure based on inductive energy storage forming line comprises a modulation resistor R_conFailure debugging diode D_conCapacitor C and power supply U_dcModulation switch M_cutLoad R_loadMain switch M_mainAnd the inductance energy storage forms a line.

Power source U_dcThe end of the anode is F, and the end of the cathode is H. The power supply U_dcIs a voltage source.

The F end is connected with a main switch M in series_mainAnd then grounded.

H-end sequentially connected in series with modulation switch M_cutAnd a load R_loadAnd then grounded.

The H end is sequentially connected with a capacitor C and a main switch M in series_mainAnd then grounded.

H-terminal series modulation resistor R_conAnd then grounded. H-terminal connection failure debugging diode D_conThe cathode of (1). Failure debugging diode D_conThe anode of (2) is grounded.

And recording two ends of the inductance energy storage forming line as an A point and a B point respectively. A point series modulation resistor R_conRear grounding, point B is connected in series with modulation switch M in turn_cutAnd a load R_loadAnd then grounded.

The modulation switch M_cutIs a MOSFET switching tube, wherein the modulation switch M_cutThe grid electrode is suspended, the source electrode is connected with the H end, and the drain electrode is connected with a load R in series_loadAnd then grounded.

The main switch M_mainIs a MOSFET switching tube, wherein, the main switch M_mainThe grid electrode is suspended, the drain electrode is connected with the F end, and the source electrode is grounded.

A nanosecond short pulse power series modulation method based on inductive energy storage forming lines comprises the following steps:

1) and recording two ends of the inductance energy storage forming line as an A point and a B point respectively.

At t₁Time command main switch M_mainSwitch M is turned off and modulated_cutClosing to change the state of point B from short-circuit state to G_LoadIn the state, the point B of the line formed by the inductive energy storage generates the refraction and reflection of the wave.

t₁At time, forward current i of B point state_2fReverse current i between points A and B_1bRespectively as follows:

in the formula, Y1 and Y2 represent impedance states of the inductive energy storage forming line and B point, respectively. i.e. i₀Is the initial current.

t₁At time B point load-matched catadioptric, i.e. Y₂＝Y₁。

2) At time l, the modulation switch M is opened_cutClosing the main switch M_mainWhen the reflected wave reaches the point A, the refraction and reflection occur at the point A, and the refraction and reflection do not occur at the point B.

At this time, the catadioptric current equation at point a is as follows:

in the formula i_lFor modulating the switch M_cutThe current that propagates to point a at point B before switching off. Y0 is the impedance state at point a. i.e. i_0f、i_1bThe currents at points B and a are shown, respectively.

3) After a period of time l, the impedance state at point B is Y₂Infinity, point B is totally refracted, current direction is changed, and the diode D is debugged through failure_conAct on the modulation resistor R_conThe modulated pulse width is formed with a time length of l.

At this time, the equation of the electromagnetic wave from point a to point B is as follows:

in the formula i_2lThe current is the forward current of the point A before the current moment.

The impedance state equations at points a and B are respectively as follows:

a nanosecond short pulse power parallel modulation topological structure based on inductive energy storage forming line comprises a modulation resistor R_conCapacitor C and power supply U_dcModulation switch M_cutLoad R_loadMain switch M_mainAnd the inductance energy storage forms a line.

Power source U_dcThe end of the anode is F, and the end of the cathode is H.

The F end is connected with a main switch M in series_mainAnd then grounded.

H-end series load R_loadAnd then grounded.

The H end is sequentially connected with a capacitor C and a main switch M in series_mainAnd then grounded.

H-terminal series modulation resistor R_conAnd then grounded. H-terminal series modulation switch M_cutAnd then grounded.

And recording two ends of the inductance energy storage forming line as an A point and a B point respectively. A point series modulation switch M_cutRear earth, point B series load regulation R_loadAnd then grounded.

The modulation switch M_cutIs a MOSFET switching tube, wherein the modulation switch M_cutThe grid electrode is suspended, the source electrode is grounded, and the drain electrode is connected with the H end.

The main switch M_mainIs a MOSFET switching tube, wherein, the main switch M_mainThe grid electrode is suspended, the drain electrode is connected with the F end, and the source electrode is grounded.

A nanosecond short pulse power parallel modulation method based on inductive energy storage forming lines comprises the following steps:

1) and recording two ends of the inductance energy storage forming line as an A point and a B point respectively.

At t₁Time command main switch M_mainSwitch M is turned off and modulated_cutAnd when the circuit is closed, the inductive energy storage forms refraction and reflection generated by the wire.

2) At time l/2, the modulation switch M is turned off_cutClosing the main switch M_mainThe inductive energy storage forming line has two current waves with opposite directions and the same magnitude in one propagation period, so that the modulation resistor R_conThe modulation pulse width is formed with a time length of 2 l.

One propagation period start time t₁The current waves of (a) are as follows:

end time t of a propagation cycle₁The current waves of (a) are as follows:

the impedance state equations at points a and B are respectively as follows:

example 6:

a nanosecond short pulse power series modulation method based on inductive energy storage forming lines comprises the following steps:

in order to explain how to realize the forming line pulse width debugging in the inductive energy storage circuit through electromagnetic wave regulation, the embodiment is directed to mathematical analysis of the SIE _ PFL passive electromagnetic wave regulation process. The refraction and reflection of the electromagnetic wave of the SIE _ PFL are shown in fig. 3, and the control timing is shown in fig. 4, which is characterized in that the pulse width modulation is completed after the modulation switch is switched. Y can be obtained₀There are two impedance states, Y₂There are three impedance states, as in equation (1).

FIG. 4 is a timing diagram of the control signal when the modulation pulse width is one electrical length l, which can be seen as the circuits are all in a longer time after the switch is closedHolding Y₂＝G_LoadThe first moment of wave process initiation is M_mainAnd (5) disconnecting. At this time M_conRemain closed, thus Y₂Change from short-circuit state to G_LoadStatus. Time t₁When is at Y₂Forward current of i_2fI.e. the load current i_RIs expressed in Y₁Up to a reverse current i_1bExpression (2) is shown below, where i₀Is the initial current. This also means that t₁At the moment, point B undergoes load-matched catadioptric reflection, i.e. Y₂＝Y₁。

And at time l, switch M is modulated_cutIs disconnected and M_mainThe switch is already off, and the original reflected wave has already reached point a, so that point B will not be refracted. But Y is₀If it is 0, then catadioptric reflection will occur at point A, assuming M_cutBefore disconnection Y₁The current propagating to point A is i_lFirst, the catadioptric coefficient shown in the formula (3) can be obtained, and the time l can be obtained by combining the formula (3) and the formula (2)_cutAnd (4) a catadioptric current equation of the action at the point A, as shown in the formula (4). That is to say that at this time point M is short-circuited due to point A and_cutwhen the load is disconnected, the current no longer exists on the load, thereby realizing the pulse width cutoff to achieve the pulse width debugging effect, and Y is obtained after the cutoff₁The original current in (1) is continuously completed at Y₁The transfer process in (1).

Passing of time length l until time 2l, M_cutThe modulation switch is still turned off, and the point B is in Y state₂Infinity, the fold at that timeThe reflection coefficient is (5), and Y before the moment is defined₁Forward current of i_2lSimultaneous solution of the formula can yield the time from Y₁Into Y₂The electromagnetic wave equation of (2) is equation (6). At this time, total refraction occurs, and the current direction changes, thereby failing to debug the diode D_conActing on the modulation resistor R_conThe modulated pulse width with the time length of l is formed, as shown by the waveform in the dotted line of fig. 4.

Example 7:

a nanosecond short pulse power parallel modulation method based on inductive energy storage forming lines comprises the following steps:

different from the passive regulation topology which directly cuts off pulse transmission and indirectly regulates electromagnetic waves to achieve pulse width modulation, the embodiment also provides an inductive energy storage forming line pulse width modulation active electromagnetic wave regulation topology (PIE _ PFL). The PIE _ PFL has fewer semiconductor devices, and can actively regulate and control electromagnetic waves to pass through the points A and B and realize pulse width modulation. FIG. 5 is an equivalent process node of PIE _ PFL electromagnetic wave refraction and reflection, and the impedance state of A, B point can be realized by modulating a switch M_conAnd a main switch M_mainThe on-off state switching is realized, and the electromagnetic wave is actively regulated by the refraction and reflection of the wave in the line directly caused by the modulation switch, and the modulation pulse output is formed only when the two electromagnetic waves are simultaneously coordinated and transmitted after the main switch acts.

After the dual conversion, equation (1) is the impedance state equation at point A, B in the PIE _ PFL. Y in PIE _ PFL₂Has only two impedance states, and Y₀And Y₂All can pass through M_conAnd M_mainAnd (6) switching actively. FIG. 6 shows the control logic and output waveform of the PIE _ PFL, where the pulse width modulated by the PIE _ PFL is the original 2l length pulse widthI.e. the modulation pulse width is l/2. In FIG. 6, we define t₁Is the 0 moment, i.e. the starting moment of the wave process with a starting duration of 2 l.

Equation (2) is a catadioptric coefficient matrix at point A, B, the catadioptric state of the current wave at point A, B is unique over the effective length of time and is always related to the magnitude and direction of the current before the switching state time. In order to obtain the initial current values at different time instants, the present embodiment first solves the current equation of the PIE _ PFL at the switching time instant. Due to M_conAnd M_mainThe time interval between the actuation of the two switches is less than the electrical length of a coaxial cable, and is therefore at t₁The current at the time points l/2 are both the initial current i0, i.e. at Y₁Two reflected waves with opposite directions and the same magnitude exist in one propagation period, as shown in the formula (2) and the formula (3). The staggered regulation and control of the two switches enables two current waves with the same amplitude but different acting loads and different directions to be respectively generated at the first two ends in the propagation time of the original forming line with the fixed length. Overall, the total time of the pulses output by the PIE PFL topology over the modulation load and the output load is always the full propagation length.

Example 8:

simulation and experimental verification of a nanosecond short pulse power series modulation method based on an inductive energy storage forming line are as follows:

fig. 7 shows the pwm result at the output load end, the pulse width is gradually shortened from the initial without modulation effect, and the obvious truncation effect is shown, as can be seen from the waveform modulation change process from 24ns to 5ns, the rising time of the output pulse is determined by the turn-off speed of the main switch, and the falling time of the modulation pulse is determined by the turn-on speed of the modulation switch. Similar to the tail-cut switch effect in a Marx generator, the proposed tandem modulation topology also uses a transfer loop that over-switches the modulated waveform to achieve pulse width modulation. The difference lies in that in the inductance energy storage forming line, the modulation switch not only can solve the difficult problem that the fall time of the output pulse of the single-ended inductance energy storage forming line is not movable, but also can realize pulse width modulation.

Attention is paid to the pulse voltage change condition of the modulation end. The results of the foregoing analysis show that the series modulation topology will modulate the load R in the pwm state_conThe modulation capability release is realized. Fig. 8 is a modulated load waveform of fig. 7 after pulse width modulation. The 24ns initial pulse width condition in fig. 8 does not modulate the load voltage output, whereas at 20ns pulse width modulation, a modulated pulse waveform of 4ns pulse width appears on the modulated load. As the modulation pulse width increases, naturally also the load R is modulated_conThe modulated truncated pulse voltage appears.

Example 9:

a nanosecond short pulse power parallel modulation method based on inductive energy storage forming lines comprises the following steps:

it can be seen from fig. 2 that the parallel modulation topology cancels the modulation diode D_conInstead, M is_cutDirectly connected in parallel at the modulation end. The control timing is also significantly different from the series modulation topology, the control timing of which is shown in fig. 5. That is, with M_mainOff time of (1) as origin, M_cutThe maximum amplitude which can be adjusted is to increase and decrease an electrical length l when M_cutWhen the turn-off time of the pulse modulation circuit is increased by l/2, the modulation pulse width is 1.5 l; when M is_cutWhen the turn-off time of (2) is reduced by l/2, the modulation pulse width is l/2, and FIG. 5 is M_cutThe turn-off time of (c) is reduced by the timing waveform of the topology at l/2. The inductive energy storage topology also determines that the pulse output can be generated only when the charging loop is cut off, and the rising edge of the output pulse waveform is also determined by the switch-off speed. And series modulation topologyPlop-like, modulating switch M_cutWill also have the function of sharpening the trailing edge of the pulse.

Example 10:

an experiment of a nanosecond short pulse power series modulation method based on an inductive energy storage forming line comprises the following contents:

fig. 9 is a physical circuit of a series modulation topology, two switches are connected in series, a master switch and a modulation switch are arranged on the same PCB, and simultaneously, SMA joints are used as connection modes of energy storage forming lines (both matching 50 Ω).

Fig. 10 is a pulse width modulation waveform of a series modulation topology, enumerating 5 modulation results of 10ns, 13ns, 15ns, 20ns, and 24ns, wherein the transmission line theoretical pulse width is 20ns, and the pulse width is limited to approximately 24ns in an unmodulated state due to line loss and switch dynamic performance. The series switch structure inevitably introduces a large number of parasitic parameters and directly exists in a wave transmission loop of the pulse forming line, which also causes that the output pulses do not have good square wave flat tops. From the test effect of chapter iv, the off time of the switch should be around 5ns, while the rise time of the pulse in the series modulation structure exceeds 7ns, and there is a serious rise time delay, which also results in the output pulse not having a good square wave flat top. Especially in pulse width modulation processes, the theoretically analyzed modulated output pulses should be able to have faster pulse fall times. Steepening the falling edge has been experimentally verified, but the magnitude of improvement is quite limited. It can be concluded that the series modulation topology will to some extent limit the rise time of the output pulses and the fall time of the modulation pulse width.

Example 11:

an experiment of a nanosecond short pulse power parallel modulation method based on an inductive energy storage forming line comprises the following contents:

fig. 11 is a load terminal voltage waveform pulse width modulated 24ns to 5 ns. First from 24ns to 20ns, it can be seen that the fall time of the pulse is significantly improved and the fall time of the pulse width is reduced as the width is modulated towards shorter pulse widths due to the switch off time limit set by the switch, it can be seen that the output pulse half width can only reach 7ns when set to a modulation pulse width of 5 ns. The result is obviously different from the result of fig. 7, and it is not difficult to draw a conclusion that the limit of the pulse width modulation of the topology proposed in the actual circuit design is not only limited by the characteristics of the transmission line such as high-frequency loss, but also greatly limited by the on-off time of the switch. Although the action of the modulation switch can improve the fall time of the output pulse, as the pulse width is further reduced, the operation time of the switch itself becomes a main factor for limiting the modulation margin.

FIG. 12 shows modulation load R at modulation end_conThe previous wave process analysis has first been verified on the occurrence time, i.e. the modulation voltage will be opposite to the output voltage and there will be a main switch M_mainThe turn-off time is in the left and right finite electrical length distribution of the starting point.

Fig. 13 is a main switching circuit and a modulation switching circuit of a parallel modulation topology. The upper half of fig. 13 is a modulation switching circuit, and the lower half is a main switching circuit. The experimental circuits are all used for circuits with the same series modulation topology, and SMA output interfaces and layout design for reducing parasitic inductance are used in the layout of the main loop and the design of the ports. In contrast to the series modulation topology, the parallel modulation topology places a modulation load directly at the modulation switch output port to consume the modulation pulses that occur during the pulse width modulation process.

The modulation waveform shown in fig. 14 has a significant boost compared to the output waveform of the series modulation topology. Firstly, 10ns modulation waveform, we can see that the output pulse waveform of the parallel modulation topology still has a relatively complete pulse flat top, although there is still a voltage drop in the voltage amplitude, which is mainly limited by the dynamic characteristics of the switching device. The parallel structure still shows better improvement advantages in the aspect of the steep falling time of modulation pulse widths of 15ns, 18ns and the like. In general, the parallel modulation topology is more advantageous in terms of pulse width modulation effect and trailing edge sharpening.

Example 12:

an experiment for verifying nanosecond short pulse power modulation topology based on inductive energy storage forming line comprises the following contents:

the turn-off time can reach 3ns under rated high current conditions. The ultra-fast gate drive is designed, so that the dynamic characteristic of a switch can be improved, and the stability of a pulse forming structure can be improved. Therefore, in the present embodiment, on the premise that the pwm topology is verified, the line pwm single module is formed by using the inductor energy storage based on the parallel modulation structure and the ultra-fast gate driving design with the extremely low parasitic inductor switch. Fig. 15 is a schematic diagram of a pwm circuit design, with the power circuit and output interface all in accordance with fig. 13.

In the experiment of this embodiment, the peak value of the selected charging current is 41.3A, and the dc charging voltage is 25V. Fig. 16 is a waveform of the charging current existing in the inductive storage forming line when the switch is closed, and fig. 16(a) shows that the peak current will reach 41.3A through 2 mus short circuit charging under the condition of 25V charging voltage. To more intuitively see the current peak, we performed an expansion analysis of the peak portion of the current waveform, as shown in fig. 16(b), and the current in the inductive energy storage forming line has stabilized at 41.3A for a duration of approximately 80 ns. Thus, a pulse of amplitude 1032V will be formed over a 50 Ω load resistor with 20.6A.

Fig. 17 is a pulse width modulation resultant waveform using the switches and ultrafast gate drive of the present invention as core devices, first having been reduced to 2.3ns in pulse rise time, so the output pulses clearly have faster rise and fall speeds and also have more advantageous pulse tops. As can be seen from the comparison of the 10ns pulse width modulated waveforms, the 10ns waveforms in fig. 10 and 14 both suffer from voltage sag and loss of flat top, while the 10ns modulated waveform in fig. 17 has good pulse top and is particularly advantageous in pulse front edge maintenance. In addition, the output pulse using the proposed topology through the switch package and the ultrafast gate drive can achieve 4ns pulse width modulation and have a rise time of 2.1 ns.

The invention also pays much attention to the shortest pulse and waveform quality which can be formed by the proposed topology in the modulation process. Fig. 18 shows the shortest pulse of a quasi square wave with a flat top of the square wave output by pwm control, and it can be seen that the rise time of the pulse is 2.1ns, the fall time is 3.5ns, and the pulse width is 5.1 ns. Under this condition, the output pulse still has a more stable flat-top time with a duration of about 0.9 ns. This is the shortest square pulse that the proposed topology can modulate, and the output pulse limited by the fall time can only be called a quasi square pulse.

Unlike square wave flat tops, as the modulated pulse width of the output pulse is continually shortened, the output pulse will no longer have a pulse flat top, as shown in fig. 19. Although the output pulse width has been reduced to 4.3ns at this time, there is also an unstable operation of the output pulse due to the fastest rise time of the generator being already close to it. Therefore, the pulse waveform shown in fig. 19 is not stable, which means that the minimum of the action device and the modulation device used in the present invention can modulate the pulse width to 4.3 ns.

Example 13:

the verification of the proposed topology by combining the multi-module superposition method comprises the following contents:

the invention can combine a plurality of multi-module superposition methods to realize the power superposition of output pulses, and the topology is shown in figure 20. The present embodiment takes a time isolation method as an example. The invention discusses the square wave pulse width modulation condition of the generator from 6ns to 20ns through a 5-level superposition pulse width modulation experiment. The experimental result is shown in fig. 21, the rising time of the output pulse is 4.5ns when the 5-level stack is adopted, the output pulse has good square wave flat top when the modulation pulse width is 8 ns-20 ns, and the output voltage reaches 4.91kV with almost no propagation loss. Compared with single-stage output, the pulse rise time is increased from 2.1ns to 4.5ns after 5-stage stacking, which causes the main results that the shortest pulse which can be modulated is increased from 4.3ns to 6ns, and the voltage loss during the shortest pulse modulation exists.

Since the inductive energy storage topology requires a time length of several microseconds to charge the energy storage inductor compared with the nanosecond pulse duration, which also limits the repetition frequency at which the generator can operate, fig. 22 shows the output waveform (continuously operating for 3min) of the generator provided by the present invention when the repetition frequency is 50kHz, at this time, the charging interval time reaches one hundred microseconds, and the charging power supply does not need to be additionally expanded, and the generator can effectively dissipate heat by the existing heat dissipation measures.