阅读说明：本技术 一种去除掺Sb品腐蚀药液残留的方法 (Method for removing Sb-doped product corrosive liquid medicine residue ) 是由 王建华 贺贤汉 于 2021-08-18 设计创作，主要内容包括：本发明提供了一种去除掺Sb品腐蚀药液残留的方法,包括如下步骤：步骤一,使用一次清洗混合液进行一次清洗,一次清洗混合液为SC-1清洗溶液；步骤二,使用二次清洗混合液进行二次清洗,二次清洗混合液为SC-1清洗溶液；步骤三,使用去离子水一次冲洗；步骤四,使用去离子水二次冲洗；步骤五,使用碱性药液浸泡清洗；步骤六,使用去离子水一次冲洗；步骤七,使用去离子水二次冲洗；步骤八,使用去离子水三次冲洗。本方法可以有效的去除表面的药液残留。(The invention provides a method for removing Sb-doped product corrosive liquid residues, which comprises the following steps: step one, carrying out primary cleaning by using a primary cleaning mixed solution, wherein the primary cleaning mixed solution is an SC-1 cleaning solution; step two, carrying out secondary cleaning by using a secondary cleaning mixed solution, wherein the secondary cleaning mixed solution is an SC-1 cleaning solution; step three, using deionized water for one-time washing; step four, using deionized water for secondary washing; step five, soaking and cleaning by using alkaline liquor; step six, using deionized water to wash for one time; step seven, using deionized water for secondary washing; and step eight, washing with deionized water for three times. The method can effectively remove the residual liquid medicine on the surface.)

1. A method for removing Sb-doped product corrosive liquid residues is characterized by comprising the following steps:

step one, carrying out primary cleaning by using a primary cleaning mixed solution, wherein the primary cleaning mixed solution is an SC-1 cleaning solution;

step two, carrying out secondary cleaning by using a secondary cleaning mixed solution, wherein the secondary cleaning mixed solution is an SC-1 cleaning solution;

step three, using deionized water for one-time washing;

step four, using deionized water for secondary washing;

step five, soaking and cleaning by using alkaline liquor;

step six, using deionized water to wash for one time;

step seven, using deionized water for secondary washing;

and step eight, washing with deionized water for three times.

2. The method for removing the Sb-doped corrosive liquid residue according to claim 1, wherein the method comprises the following steps: the SC-1 cleaning solution in the first step and the second step is a mixed solution of ammonia water, hydrogen peroxide and deionized water.

3. The method for removing the Sb-doped corrosive liquid residue as claimed in claim 2, wherein: in the first step, the volume ratio of ammonia water and hydrogen peroxide of the SC-1 cleaning solution is 1: 1; the volume ratio of hydrogen peroxide of the SC-1 cleaning solution to deionized water is (1: 5-1): 10;

the mass percentage concentration of the ammonia water is 28 percent;

the mass percentage concentration of the hydrogen peroxide is 30-35%.

4. The method for removing the Sb-doped corrosive liquid residue according to claim 1, wherein the method comprises the following steps: in the first step, the temperature of the SC-1 cleaning solution is 50-65 ℃, and the cleaning time is 3-6 min.

5. The method for removing the Sb-doped corrosive liquid residue according to claim 1, wherein the method comprises the following steps: in the second step, the volume ratio of ammonia water and hydrogen peroxide of the SC-1 cleaning solution is 1: 1; the volume ratio of hydrogen peroxide of the SC-1 cleaning solution to deionized water is (1: 5-1): 10;

the mass percentage concentration of the ammonia water is 28 percent;

the mass percentage concentration of the hydrogen peroxide is 30-35%.

6. The method for removing the Sb-doped corrosive liquid residue according to claim 1, wherein the method comprises the following steps: in the second step, the temperature of the SC-1 cleaning solution is 50-65 ℃, and the cleaning time is 3-6 min.

7. The method for removing the Sb-doped corrosive liquid residue according to claim 1, wherein the method comprises the following steps: in the third step, the temperature of the deionized water is 23 ℃, and the washing time is 3-6 min.

8. The method for removing the Sb-doped corrosive liquid residue according to claim 1, wherein the method comprises the following steps: in the fourth step, the temperature of the deionized water is 23 ℃, and the washing time is 3-6 min.

9. The method for removing the Sb-doped corrosive liquid residue according to claim 1, wherein the method comprises the following steps: in the fifth step, the alkaline liquid medicine is NaOH, and the mass percentage concentration is 40-49%.

10. The method for removing the Sb-doped corrosive liquid residue according to claim 1, wherein the method comprises the following steps: in the sixth step, the temperature of the deionized water is 35-60 ℃, and the washing time is 3-6 min.

Technical Field

The invention relates to the technical field of silicon wafer processing, in particular to a method for removing Sb-doped product corrosive liquid residues.

Background

The chemical etching process of silicon is used in the aspects of surface cleaning treatment of semiconductor material silicon, removal of a surface damage layer after mechanical processing of a silicon wafer, thinning of a directly bonded silicon wafer, chemical etching of defects in silicon and the like.

The chemical corrosion of the silicon surface generally adopts a wet corrosion mode, the surface of the silicon wafer is corroded to form tiny batteries which are randomly distributed, the corrosion current is large and generally exceeds 100mA/cm². But due to high purity of the corrosive liquid and reduction of possible contamination by metal ionsThe requirements of dyeing are that hydrofluoric acid (HF) and nitric acid (HNO) are mainly used at present₃) And acetic acid (CH)₃COOH) mixed acidic etching solution.

During the whole etching and cleaning process: and after the wafer is corroded, the wafer enters the overflow tank for water washing to clean the residual corrosive liquid on the surface of the silicon wafer. But the liquid medicine capability for cleaning the surface of the silicon wafer is different due to the silicon wafers with different doping types. Therefore, the chemical solution may remain in the partially doped type wafer.

At present, a method specially suitable for removing the residual Sb (antimony) -doped product corrosive liquid medicine is lacked.

Disclosure of Invention

The invention provides a method for removing Sb-doped product corrosive liquid residues, which solves at least one technical problem.

In order to achieve the purpose, the technical scheme adopted by the invention is as follows:

the invention provides a method for removing Sb-doped product corrosive liquid residues, which is characterized by comprising the following steps of:

step one, carrying out primary cleaning by using a primary cleaning mixed solution, wherein the primary cleaning mixed solution is an SC-1 cleaning solution;

step two, carrying out secondary cleaning by using a secondary cleaning mixed solution, wherein the secondary cleaning mixed solution is an SC-1 cleaning solution;

step three, using deionized water for one-time washing;

step four, using deionized water for secondary washing;

step five, soaking and cleaning by using alkaline liquor;

step six, using deionized water to wash for one time;

step seven, using deionized water for secondary washing;

and step eight, washing with deionized water for three times.

Further preferably, the SC-1 cleaning solution in the first step and the second step is a mixed solution of ammonia water, hydrogen peroxide and deionized water.

Further preferably, in the step one, the volume ratio of the ammonia water and the hydrogen peroxide of the SC-1 cleaning solution is 1: 1; the volume ratio of hydrogen peroxide of the SC-1 cleaning solution to deionized water is (1: 5-1): 10;

the mass percentage concentration of the ammonia water is 28 percent;

the mass percentage concentration of the hydrogen peroxide is 30-35%.

Further preferably, in the step one, the temperature of the SC-1 cleaning solution is 50-65 ℃, and the cleaning time is 3-6 min.

Further preferably, in the second step, the volume ratio of the ammonia water and the hydrogen peroxide of the SC-1 cleaning solution is 1: 1; the volume ratio of hydrogen peroxide of the SC-1 cleaning solution to deionized water is (1: 5-1): 10;

the mass percentage concentration of the ammonia water is 28 percent;

the mass percentage concentration of the hydrogen peroxide is 30-35%.

Further preferably, in the second step, the temperature of the SC-1 cleaning solution is 50-65 ℃, and the cleaning time is 3-6 min.

Further preferably, in the third step, the temperature of the deionized water is 23 ℃, and the washing time is 3-6 min.

Further preferably, in the fourth step, the temperature of the deionized water is 23 ℃, and the rinsing time is 3-6 min.

Further preferably, in the fifth step, the alkaline liquid medicine is NaOH, and the mass percentage concentration is 40% -49%.

Further preferably, in the sixth step, the temperature of the deionized water is 35-60 ℃, and the washing time is 3-6 min.

Further preferably, in the seventh step, the temperature of the deionized water is 35-60 ℃, and the washing time is 3-6 min.

Drawings

FIG. 1 is a flow chart of the present invention;

FIG. 2 is a schematic view of a silicon wafer surface after a conventional single pass pad cleaning and acid etching;

FIG. 3 is a schematic view of the wafer surface after the pad cleaning and the acid etching of the process of the present invention.

Detailed Description

The following embodiments are implemented on the premise of the technical scheme of the present invention, and give detailed implementation modes and specific operation procedures, but the protection scope of the present invention is not limited to the following embodiments.

Referring to fig. 1, a method for removing residue of Sb-doped article etching solution is characterized by comprising the following steps:

step one, carrying out primary cleaning by using a primary cleaning mixed solution, wherein the primary cleaning mixed solution is an SC-1 cleaning solution; the temperature of the SC-1 cleaning solution is 50-65 ℃, and the cleaning time is 3-6 min.

The SC-1 cleaning solution is a mixed solution of ammonia water, hydrogen peroxide and deionized water. The volume ratio of ammonia water and hydrogen peroxide of the SC-1 cleaning solution is 1: 1; the volume ratio of hydrogen peroxide of the SC-1 cleaning solution to deionized water is (1: 5-1): 10; the mass percentage concentration of the ammonia water is 28 percent; the mass percentage concentration of the hydrogen peroxide is 30-35%.

Step two, carrying out secondary cleaning by using a secondary cleaning mixed solution, wherein the secondary cleaning mixed solution is an SC-1 cleaning solution; the temperature of the SC-1 cleaning solution is 50-65 ℃, and the cleaning time is 3-6 min.

The SC-1 cleaning solution is a mixed solution of ammonia water, hydrogen peroxide and deionized water. The volume ratio of ammonia water and hydrogen peroxide of the SC-1 cleaning solution is 1: 1; the volume ratio of hydrogen peroxide of the SC-1 cleaning solution to deionized water is (1: 5-1): 10;

the mass percentage concentration of the ammonia water is 28 percent;

the mass percentage concentration of the hydrogen peroxide is 30-35%.

Step three, using deionized water for one-time washing; the temperature of the deionized water is 23 ℃, and the washing time is 3-6 min.

Step four, using deionized water for secondary washing; the temperature of the deionized water is 23 ℃, and the washing time is 3-6 min.

Step five, soaking and cleaning by using alkaline liquor; the alkaline liquid medicine is NaOH, and the mass percentage concentration is 40-49%.

Step six, using deionized water to wash for one time; the temperature of the deionized water is 35-60 ℃, and the washing time is 3-6 min.

And step seven, using deionized water for secondary washing. The temperature of the deionized water is 35-60 ℃, and the washing time is 3-6 min.

And step eight, washing with deionized water for three times. The temperature of the deionized water is 35-60 ℃, and the washing time is 3-6 min.

The cleaning of the grinding plate and the acid etching.

And (5) carrying out abrasive disc cleaning before the first step, and carrying out acid corrosion after the eighth step. The acid etching adopts the traditional acid etching process. The acid etching uses hydrofluoric acid (HF) and nitric acid (HNO)₃) And acetic acid (CH)₃COOH) mixed acidic etching solution. Concentration of hydrofluoric acid: 6-10 wt%; nitric acid: 35-40 wt%; 15-20 wt% of acetic acid.

This patent is through having increased the processing procedure between abrasive disc washing and acid corrosion. The process before the wafer is corroded is improved, so that the surface glossiness of the corroded silicon wafer is improved, the existence of liquid medicine residues on the surface of the corroded wafer is reduced, the liquid medicine residues on the surface can be effectively removed through conventional cleaning, and the surface of the wafer is shown in figure 3.

FIG. 2 is a schematic view of a conventional wafer surface which has not undergone direct acid etching after the cleaning of the lapping plate according to the step of this patent.

While the preferred embodiments of the present invention have been described in detail, it will be understood by those skilled in the art that the invention is not limited thereto, and that various changes and modifications may be made without departing from the spirit of the invention, and the scope of the appended claims is to be accorded the full scope of the invention.