阅读说明：本技术 一种用于单片湿处理制程的槽式工艺方法 (Groove type process method for single-chip wet treatment process ) 是由 史蒂文·贺·汪 刘立安 王亦天 吴仪 于 2021-09-15 设计创作，主要内容包括：本发明提供了一种用于单片湿处理制程的槽式工艺方法,包括如下步骤：S10：提供一清洗槽,清洗槽内注入有工艺液体,并提供一基片夹具,基片夹具连接有驱动装置；S20：利用基片夹具夹持基片；S30：控制驱动装置驱动基片浸入清洗槽的工艺液体内以进行湿处理工艺；S40：基片湿处理完毕后,控制驱动装置驱动基片脱离清洗槽。本发明提供的用于单片湿处理制程的槽式工艺方法,基片夹具一次仅夹持一个基片,该基片在驱动装置的驱动下浸入工艺液体,一方面避免了基片间交叉感染的风险,另一方面也确保了基片与工艺液体的充分、均匀接触,提高了清洗效果。(The invention provides a groove type process method for a single-chip wet treatment process, which comprises the following steps: s10: providing a cleaning tank, injecting process liquid into the cleaning tank, and providing a substrate clamp which is connected with a driving device; s20: clamping the substrate by using a substrate clamp; s30: controlling a driving device to drive the substrate to be immersed into the process liquid of the cleaning tank so as to carry out a wet treatment process; s40: and after the wet treatment of the substrate is finished, controlling the driving device to drive the substrate to be separated from the cleaning tank. According to the groove type process method for the single-chip wet treatment process, the substrate clamp only clamps one substrate at a time, and the substrate is immersed in the process liquid under the driving of the driving device, so that the risk of cross infection among the substrates is avoided, the substrates are ensured to be in full and uniform contact with the process liquid, and the cleaning effect is improved.)

1. A trough type process method for a single-chip wet treatment process is characterized by comprising the following steps:

s10: providing a cleaning tank, injecting process liquid into the cleaning tank, and providing a substrate clamp which is connected with a driving device;

s20: clamping the substrate by using a substrate clamp;

s30: controlling a driving device to drive the substrate to be immersed into the process liquid of the cleaning tank so as to carry out a wet treatment process;

s40: and after the wet treatment of the substrate is finished, controlling the driving device to drive the substrate to be separated from the cleaning tank.

2. The slot process method for the monolithic wet processing process as claimed in claim 1, further comprising, between the steps S30 and S40, the step S31: in the wet treatment process of the substrate, the driving device is controlled to drive the substrate to rotate in the cleaning tank by taking the central axis of the substrate as the center.

3. The slot processing method for the wet single sheet processing process as claimed in claim 1, further comprising step S50 after step S40: and after the substrate is separated from the liquid level of the process liquid, controlling the driving device to drive the substrate to rotate by taking the central axis of the substrate as a center.

4. The slot process for monolithic wet processing fabrication as recited in claim 2 or 3, wherein the rotation speed of the substrate ranges from 40 rpm to 200 rpm.

5. The tank process method for a wet single wafer processing process as claimed in claim 1, wherein in step S30, the substrate is immersed in the process liquid in the cleaning tank in an inclined posture with respect to the surface of the process liquid.

6. The bath process method for a single sheet wet treatment process of claim 5, wherein the substrate is immersed in the process liquid at an angle ranging from 0 ° to 5 ° relative to the surface of the process liquid.

7. The slot type process method for single wafer wet processing process of claim 1, wherein the cleaning tank comprises an inner slot, an outer slot surrounding the inner slot, and a circulation piping system;

the circulating pipeline system comprises a liquid inlet pipe, a liquid outlet pipe, a filter and a circulating pump, one end of the liquid outlet pipe is connected with the outer tank, the other end of the liquid outlet pipe is connected with one end of the liquid inlet pipe through the circulating pump and the filter, and the other end of the liquid inlet pipe is connected with the inner tank;

in step S30, the substrate is immersed in the process liquid in the inner tank under the driving of the driving device to perform a wet treatment process.

8. The slot type process method for single wafer wet processing procedure of claim 1, wherein the cleaning slot is covered with a water retaining ring capable of being lifted.

9. The trough type process method for the single sheet wet treatment process according to claim 1, wherein a flow equalizing plate is disposed at an inlet of the cleaning trough; and/or the presence of a gas in the gas,

the bottom of the cleaning tank is provided with an ultrasonic/megasonic generating mechanism, and the ultrasonic/megasonic generating mechanism provides ultrasonic/megasonic to the process liquid in the cleaning tank.

10. The slot type process method for single wafer wet processing process according to claim 1, wherein the cleaning slot is connected with a temperature control device.

11. The slot process method for single sheet wet processing according to claim 1, wherein the cleaning slot has a circular cross-section.

Technical Field

The invention relates to the technical field of semiconductor manufacturing, in particular to a groove type process method for a single-chip wet treatment process.

Background

The integrated circuit industry is the most innovative and fastest-updating industry in the present generation, is the basis of information network technology and microelectronic technology which are developed in the future in the 20 th century, and is closely related to our daily life. The design and manufacture of integrated circuit chips is the core and the main body of the integrated circuit industry, and is the basis for accelerating the development and creation of the semiconductor integrated circuit industry. The processing technologies such as wet etching and cleaning of the integrated circuit substrate penetrate through the whole chip manufacturing process, and account for more than 25% of production links. At present, the wet treatment method of the substrate mainly comprises two methods:

one is a groove type cleaning method, and the working principle can be simply summarized as follows: the groove type cleaning machine is characterized in that a plurality of (generally 25) substrates are placed in a wafer box at one time, the wafer box is placed in a flower basket, the flower basket is placed in a treatment groove filled with liquid medicine or deionized water through a driving device, the driving device is retracted, the substrates are soaked in the liquid medicine or the deionized water for a period of working time, and then the driving device extends into a cleaning groove to take out the flower basket. The groove type cleaning method has the advantages that a plurality of substrates can be cleaned at one time, the cleaning efficiency is high, and the cost is low; however, the disadvantage is also obvious, that is, because more substrates must be processed at one time, the volume of the equipment is often larger, more liquid medicine or deionized water must be used, and in addition, a larger number of substrates are immersed in one tank at the same time, which easily causes cross contamination between the substrates, and easily causes the condition that a plurality of substrates are scrapped at the same time.

Secondly, the single-chip cleaning method has the working principle that: the substrate is taken out of the film box by the driving device and placed on a rotating platform in a process chamber of the cleaning machine. In the process of technological operation, the rotating platform rotates to drive the substrate to rotate, and the nozzle with the liquid medicine or the deionized water is sprayed from the upper part of the substrate to clean. And after the process operation is finished, the substrate is taken out by the driving device and placed back into the wafer box. Compared with a trough type cleaning method, the single-wafer type cleaning method well avoids the occurrence of cross contamination, but due to the adoption of a spraying mode, the non-uniformity of liquid medicine or deionized water on the surface of the substrate is easily caused, so that certain process defects are caused, and the defects are particularly prominent in the process of using a medicament with accurate temperature control.

How to ensure that the liquid medicine or the plasma water uniformly cleans the surface of the substrate while avoiding the cross contamination among the substrates becomes a technical problem which needs to be solved urgently in the field.

Disclosure of Invention

Aiming at the defects in the prior art, the invention aims to provide a groove type process method for a single-chip wet treatment process, so as to solve the problems of easy substrate cross infection or poor cleaning uniformity and poor stability of the conventional wet treatment method.

The groove type process method for the single-chip wet treatment process comprises the following steps:

s10: providing a cleaning tank, injecting process liquid into the cleaning tank, and providing a substrate clamp which is connected with a driving device;

s20: clamping the substrate by using a substrate clamp;

s30: controlling a driving device to drive the substrate to be immersed into the process liquid of the cleaning tank so as to carry out a wet treatment process;

s40: and after the wet treatment of the substrate is finished, controlling the driving device to drive the substrate to be separated from the cleaning tank.

In the technical scheme, the substrate clamp only clamps one substrate at a time, and the substrate is immersed in the process liquid under the driving of the driving device to carry out a wet treatment process, so that the risk of cross infection among the substrates is avoided, the substrates are ensured to be fully and uniformly contacted with the process liquid, and the cleaning effect is improved. It is worth to say that, in the wet processing process, the substrate is always in a state of being clamped by the substrate clamp, and after the wet processing is finished, the substrate clamp drives the substrate to be separated from the cleaning tank under the driving of the driving device.

Preferably, between step S30 and step S40, step S31 is further included: in the wet treatment process of the substrate, the driving device is controlled to drive the substrate to rotate in the cleaning tank by taking the central axis of the substrate as the center.

In the technical scheme, the substrate rotates in the wet treatment process, and the substrate can be in more sufficient and uniform contact with the process liquid through the rotation of the substrate.

Preferably, after the step S40, the method further comprises the step S50: and after the substrate is separated from the liquid level of the process liquid, controlling the driving device to drive the substrate to rotate by taking the central axis of the substrate as a center.

In the technical scheme, the substrate is controlled to rotate after being separated from the liquid level of the process liquid, so that the residual process liquid on the surface of the substrate can be thrown out.

Preferably, the substrate is rotated at a speed in the range of 40 rpm to 200 rpm.

In the technical scheme, the rotating speed of the substrate is controlled between 40 rpm and 200 rpm, so that on one hand, the substrate can be ensured to be uniformly and fully contacted with the process liquid, and on the other hand, the phenomenon that the rotating speed is too high to increase the load on the substrate and the substrate clamp can be avoided, and the reliability of equipment is improved.

Preferably, in step S30, the substrate is immersed in the process liquid in the cleaning bath in a posture inclined with respect to the liquid surface of the process liquid.

In the technical scheme, the substrate is immersed into the process liquid in an inclined posture, so that micro bubbles can be prevented from being generated on the surface to be processed of the substrate.

Preferably, the included angle of the substrate relative to the liquid level of the process liquid when the substrate is immersed in the process liquid is in the range of 0-5 degrees.

In the technical scheme, when the substrate is immersed into the process liquid, the included angle range of the substrate relative to the liquid level of the process liquid is between 0 and 5 degrees, on one hand, the generation of micro bubbles can be avoided, and on the other hand, because the substrate clamp for clamping the substrate is small in inclination range in the angle range, the driving device is not overloaded, and the structure of the driving device can be simplified.

Preferably, the cleaning tank comprises an inner tank, an outer tank surrounding the inner tank, and a circulation pipeline system;

the circulating pipeline system comprises a liquid inlet pipe, a liquid outlet pipe, a filter and a circulating pump, one end of the liquid outlet pipe is connected with the outer tank, the other end of the liquid outlet pipe is connected with one end of the liquid inlet pipe through the circulating pump and the filter, and the other end of the liquid inlet pipe is connected with the inner tank;

in step S30, the substrate is immersed in the process liquid in the inner tank under the driving of the driving device to perform a wet treatment process.

In the technical scheme, the treatment tank consists of an inner tank, an outer tank and a circulating pipeline system, wherein the inner tank is connected with a liquid inlet pipe, the outer tank is connected with a liquid outlet pipe, and the liquid inlet pipe is connected with the liquid outlet pipe through a circulating pump and a filter, so that process liquid overflowing from the inner tank is discharged through the liquid outlet pipe after entering the outer tank, and the process liquid enters the inner tank through the liquid inlet pipe under the action of the circulating pump, and the process liquid is circulated. While the filter is arranged to keep the components of the process liquid in a pure state.

Preferably, the cleaning tank is sleeved with a liftable water retaining ring.

In the technical scheme, the rotation design of the substrate is combined, when the substrate is separated from the liquid surface of the process liquid, the water retaining ring can be lifted, and the process liquid thrown out by the rotation of the substrate is blocked by the water retaining ring and returns to the cleaning tank again so as to play a role in recovering the process liquid.

Preferably, a flow equalizing plate is arranged at the liquid inlet of the cleaning tank; and/or the presence of a gas in the gas,

the bottom of the cleaning tank is provided with an ultrasonic/megasonic generating mechanism, and the ultrasonic/megasonic generating mechanism provides ultrasonic/megasonic to the process liquid in the cleaning tank.

In the technical scheme, the process liquid can be guided and flow equalized through reasonable distribution of the air holes on the flow equalizing plate; the ultrasonic wave/megasonic wave can be provided for the process liquid in the cleaning tank through the design of the ultrasonic wave/megasonic wave generating mechanism, so that the cleaning or stirring effect is enhanced.

Preferably, the cleaning tank is connected with a temperature control device.

In this technical scheme, the user can be through the temperature control device control process liquid's temperature, for example heating or cooling process liquid to make process liquid's temperature more even.

Preferably, the cross-section of the cleaning tank is circular.

Among this technical scheme, the cross section of washing tank is circular, and it can be the washing tank of cylinder for the appearance, also can be the washing tank of the type cylinder that the appearance is tapered, and circular washing tank is compared in square washing tank, can effectually avoid the vortex.

Compared with the prior art, the invention has the following beneficial effects:

1. the groove type process method for the single-chip wet treatment process adopts a mode of combining single-chip wet treatment and groove type cleaning, the substrate clamp only clamps one substrate at a time, and the substrate is immersed in process liquid under the driving of the driving device, so that the risk of cross infection among the substrates is avoided, the sufficient and uniform contact between the substrate and the process liquid is also ensured, and the cleaning effect is improved.

2. The groove type process method for the single-chip wet treatment process can enable the cleaning groove to form an independent circulation, filtration and temperature control system through the arrangement of the filter, the circulating pump, the temperature control device and the like, and the system can further enable the substrate to be in process liquid with more uniform temperature and concentration through the addition of the ultrasonic/megasonic wave generating mechanism, the flow equalizing plate and the like, so that the wet treatment effect of the substrate is optimized.

3. The groove type process method for the single-chip wet treatment process, provided by the invention, has the advantages that the substrate can rotate under the driving of the driving device, and the rotation of the substrate can be matched with the process means of circulation, filtration, temperature control and the like of the cleaning groove, so that the stable and uniform process requirement is met, and the wet treatment effect of the substrate is greatly improved.

4. The trough type process method for the single chip wet treatment process can be characterized in that the cleaning trough is externally sleeved with a liftable water retaining ring, after the substrate is treated in the process liquid, the driving device drives the substrate to rise to separate from the liquid level, at the moment, the driving device can drive the substrate to rotate, so that the residual process liquid on the surface of the substrate is thrown out, and the thrown process liquid is blocked by the water retaining ring to return to the cleaning trough again, so that the recovery effect is achieved.

Drawings

Other features, objects and advantages of the invention will become more apparent upon reading of the detailed description of non-limiting embodiments with reference to the following drawings:

FIG. 1 is a schematic flow chart of a trench processing method for a single wafer wet processing process according to an embodiment of the present invention;

FIG. 2 is a schematic flow chart of a trench processing method for a single wafer wet processing process according to an embodiment of the present invention;

FIG. 3 is a flow chart illustrating a trough processing method for a single wafer wet processing process according to one embodiment of the present invention;

FIG. 4 is a flow chart illustrating a trough processing method for a single wafer wet processing process according to one embodiment of the present invention;

FIG. 5 is a schematic diagram of a system configuration for a trench process for a single wafer wet processing process using the present invention.

The figures show that:

1-a drive device;

2-a substrate holder;

3, cleaning a tank;

4-a substrate;

5-a filter;

6-circulating pump;

7-temperature control means;

8-a water retaining ring;

9-flow equalizing plate

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. The components of the embodiments of the present application, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations.

Thus, the following detailed description of the embodiments of the present application, presented in the accompanying drawings, is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures. Further, all directional indicators in this application (such as up, down, left, right, front, back, bottom …) are only used to explain the relative positional relationship between the components, the motion, etc. at a particular attitude (as shown in the drawings), and if the particular attitude changes, the directional indicator changes accordingly. Further, the descriptions in this application referring to "first", "second", etc. are for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicit to the number of technical features indicated.

Example 1

As shown in fig. 1, the present embodiment provides a trench processing method for a single wafer wet processing process, comprising the following steps:

s10: providing a cleaning tank 3, injecting process liquid into the cleaning tank 3, and providing a substrate clamp 2, wherein the substrate clamp 2 is connected with a driving device 1;

s20: clamping a substrate 4 by using a substrate clamp 2;

s30: controlling the driving device 1 to drive the substrate 4 to be immersed into the process liquid of the cleaning tank 3 to carry out the wet treatment process;

s40: after the wet processing of the substrate 4 is completed, the driving device 1 is controlled to drive the substrate 4 to be separated from the cleaning tank 3.

As shown in fig. 5, a substrate 4 is mounted on a substrate holder 2, and the substrate 4 is controlled to have a processing surface facing downward, the substrate holder 2 is connected to a driving device 1, and the driving device 1 drives the substrate holder 2 to displace, thereby moving the substrate 4 in a specific direction. The drive means 1 may be a robot.

A cleaning tank 3 is arranged below the substrate clamp 2, and process liquid is contained in the cleaning tank 3. When the wet treatment process needs to be carried out on the substrate 4, the driving device 1 is controlled, the driving device 1 drives the substrate 4 to move downwards until the substrate 4 is immersed into the process liquid of the cleaning tank 3, the substrate clamp 2 keeps the clamping state of the substrate 4 in the process of carrying out the wet treatment process on the substrate 4, and the driving device 1 drives the substrate 4 to be separated from the cleaning tank 3 through the substrate clamp 2 until the wet treatment of the substrate 4 is finished.

According to the invention, a mode of combining single-chip wet treatment and groove type cleaning is adopted, the substrate clamp 2 only clamps one substrate 4 at a time, and the substrate 4 is immersed in the process liquid under the driving of the driving device 1, compared with the groove type cleaning method, the risk of cross infection among the substrates 4 is avoided in the embodiment, and compared with the single-chip type cleaning method, the embodiment ensures the sufficient and uniform contact between the substrate 4 and the process liquid, and improves the cleaning effect.

Example 2

As shown in fig. 2, the present embodiment provides a trench processing method for a single wafer wet processing process, comprising the following steps:

s10: providing a cleaning tank 3, injecting process liquid into the cleaning tank 3, and providing a substrate clamp 2, wherein the substrate clamp 2 is connected with a driving device 1;

s20: clamping a substrate 4 by using a substrate clamp 2;

s30: controlling the driving device 1 to drive the substrate 4 to be immersed into the process liquid of the cleaning tank 3 to carry out the wet treatment process;

s31: in the wet treatment process of the substrate 4, controlling the driving device 1 to drive the substrate 4 to rotate in the cleaning tank 3 by taking the central axis of the substrate 4 as the center;

s40: after the wet processing of the substrate 4 is completed, the driving device 1 is controlled to drive the substrate 4 to be separated from the cleaning tank 3.

Compared with embodiment 1, the difference of this embodiment is that in the process of wet processing the substrate 4, the driving device 1 is controlled to drive the substrate 4 to rotate, and the substrate 4 rotates in the process liquid, so that the effect of enhancing cleaning can be achieved. Further, in order to avoid the substrate 4 from rotating and generating eddy currents, the cross section of the cleaning tank 3 is designed to be circular, for example, the cleaning tank 3 may be cylindrical or a tapered cylinder. The rotation of the substrate 4 is matched with the circular cleaning tank 3, so that the stable and uniform process requirement can be met, and the process effect is further improved.

In addition, the rotating speed of the substrate 4 can be controlled between 40 rpm and 200 rpm, so that on one hand, the uniform and sufficient contact between the substrate 4 and the process liquid can be ensured, and on the other hand, the phenomenon that the rotating speed is too high to increase the load on the substrate 4 and the substrate clamp 2 can be avoided, thereby improving the reliability of the equipment.

Example 3

As shown in fig. 3, the present embodiment provides a trench processing method for a single wafer wet processing process, comprising the following steps:

s10: providing a cleaning tank 3, injecting process liquid into the cleaning tank 3, and providing a substrate clamp 2, wherein the substrate clamp 2 is connected with a driving device 1;

s20: clamping a substrate 4 by using a substrate clamp 2;

s30: controlling the driving device 1 to drive the substrate 4 to be immersed into the process liquid of the cleaning tank 3 to carry out the wet treatment process;

s40: after the wet treatment of the substrate 4 is finished, controlling the driving device 1 to drive the substrate 4 to be separated from the cleaning tank 3;

s50: after the substrate 4 is separated from the liquid level of the process liquid, the driving device 1 is controlled to drive the substrate 4 to rotate by taking the central axis of the substrate 4 as a center.

Compared with embodiment 1, the difference between this embodiment and embodiment 1 is that after the wet processing of the substrate 4 is completed, when the driving device 1 drives the substrate 4 to be separated from the liquid level of the process liquid, the driving device 1 drives the substrate 4 to rotate, so that the substrate 4 is thrown away from the residual process liquid. Furthermore, in order to reduce the cost, a liftable water retaining ring 8 can be sleeved outside the cleaning tank 3, after the wet treatment of the substrate 4 is finished, the water retaining ring 8 can be lifted until the substrate 4 is separated from the liquid level of the process liquid under the driving of the driving device 1, the driving device 1 is controlled to drive the substrate 4 to rotate, so that the substrate 4 is thrown away from the residual process liquid, and the part of the process liquid is blocked by the water retaining ring 8 and returns to the cleaning tank 3 again to play a role in recovery.

In addition, the rotating speed of the substrate 4 can be controlled between 40 rpm and 200 rpm, so that on one hand, the uniform and sufficient contact between the substrate 4 and the process liquid can be ensured, and on the other hand, the phenomenon that the rotating speed is too high to increase the load on the substrate 4 and the substrate clamp 2 can be avoided, thereby improving the reliability of the equipment.

Example 4

As shown in fig. 4, the present embodiment provides a trench processing method for a single wafer wet processing process, comprising the following steps:

s10: providing a cleaning tank 3, injecting process liquid into the cleaning tank 3, and providing a substrate clamp 2, wherein the substrate clamp 2 is connected with a driving device 1;

s20: clamping a substrate 4 by using a substrate clamp 2;

s30: controlling the driving device 1 to drive the substrate 4 to be immersed in the process liquid of the cleaning tank 3 in a posture inclined with respect to the process liquid level to perform a wet treatment process;

s40: after the wet processing of the substrate 4 is completed, the driving device 1 is controlled to drive the substrate 4 to be separated from the cleaning tank 3.

The difference between this embodiment and embodiment 1 is that the substrate 4 in this embodiment is immersed in the process liquid in an inclined posture, so that the generation of fine bubbles on the surface to be processed of the substrate 4 can be avoided, thereby ensuring sufficient contact between the surface to be processed of the substrate 4 and the process liquid and improving the cleaning effect. Preferably, the substrate 4 is immersed in the process liquid with an angle of 0 ° to 5 ° relative to the liquid level of the process liquid, so that the substrate holder 2 holding the substrate 4 is inclined to a small extent without causing excessive load on the driving device 1, thereby simplifying the structure of the driving device 1.

Example 5

In order to improve the cleaning effect of the substrate 4 and achieve the stable and uniform process requirement, the present embodiment further designs the cleaning tank 3 on the basis of any of the above embodiments. As shown in fig. 5, the cleaning tank 5 includes an inner tank, an outer tank surrounding the inner tank, and a circulation pipe system including a liquid inlet pipe, a liquid outlet pipe, a filter 5, and a circulation pump 6, wherein one end of the liquid inlet pipe is connected to the inner tank, the other end of the liquid inlet pipe is connected to one end of the liquid outlet pipe via the circulation pump 6 and the filter 5, and the other end of the liquid outlet pipe is connected to the outer tank. The structure design ensures that the process liquid overflowing from the inner tank is discharged through the liquid outlet pipe after entering the outer tank, and the process liquid enters the inner tank through the liquid inlet pipe under the action of the circulating pump 6, and the process liquid is circulated in this way. While the filter 5 is designed such that the composition of the process liquid is maintained in a pure state.

Further, the cleaning tank 33 is connected to a temperature control device 7, so that a user can control the temperature of the process liquid through the temperature control device 7, such as heating or cooling the process liquid, so as to make the temperature of the process liquid more uniform. In addition, the liquid inlet of the cleaning tank 3 is provided with the flow equalizing plate 9, and the process liquid is guided and equalized by reasonable distribution of the air holes on the flow equalizing plate 9. Meanwhile, an ultrasonic/megasonic generating mechanism is arranged at the bottom of the cleaning tank 3 and provides ultrasonic/megasonic to the process liquid in the cleaning tank 3, so as to enhance the cleaning or stirring effect.

In the embodiment, the cleaning tank 3 forms an independent circulation, filtration and temperature control system through the structural design, so that the substrate 4 is in the process liquid with more uniform temperature and concentration, and the wet treatment effect of the substrate 4 is optimized. In addition, as for the material of the cleaning tank 3, the cleaning tank 3 can be made of different materials according to the characteristics of the process liquids contained therein, including but not limited to PE (polyethylene), PP (polypropylene), PVDF (polyvinylidene fluoride), PTFE (polytetrafluoroethylene), ETFE (ethylene-tetrafluoroethylene copolymer), quartz, stainless steel, etc.

It should be noted that in other embodiments of the present invention, a user can select different configurations of the cleaning tank 3 according to different process requirements, i.e., select and configure any one or more of the filter 5, the circulation pump 6, the temperature control device 7, the ultrasonic/megasonic wave generating mechanism, the flow equalizing plate 9, etc. according to actual needs.

While the embodiments of the present invention have been described, it is clear that various changes and modifications can be made by workers in the field without departing from the technical spirit of the present invention.