阅读说明：本技术 一种用于人工光合作用的氮化物基器件及其制备方法 (Nitride-based device for artificial photosynthesis and preparation method thereof ) 是由 陈贵锋 刘靳恬 张辉 解新建 于 2021-08-05 设计创作，主要内容包括：本发明公开了一种用于人工光合作用的氮化物基器件及其制备方法。该器件自下而上为蓝宝石衬底,n～(+)-GaN层,AlGaN层,Cu基助催剂保护层。其制备过程如下：首先在蓝宝石衬底上生长n型GaN层,再在n型GaN层上利用分子束外延技术生长AlGaN层,再通过刻蚀方法刻蚀部分AlGaN层,在刻蚀掉的位置上通过蒸镀方法制备欧姆接触,利用掩模版将欧姆接触掩盖,通过旋涂法旋涂Cu基助催剂作为保护层,然后在真空管式炉中300℃下退火30min,自然冷却到室温后取出,获得具有保护层的氮化物器件。本发明的氮化物器件具有较高的吸收系数、良好的耐腐蚀性,可作为一种光阳极材料应于于人工光合作用中,对减少空气中二氧化碳浓度以及能源的开发具有重要意义。(The invention discloses a nitride-based device for artificial photosynthesis and a preparation method thereof. The device is a sapphire substrate from bottom to top, n + -a GaN layer, an AlGaN layer, a Cu-based promoter protective layer. The preparation process comprises the following steps: firstly growing an n-type GaN layer on a sapphire substrate, then growing an AlGaN layer on the n-type GaN layer by using a molecular beam epitaxy technology, etching part of the AlGaN layer by using an etching method, and preparing an ohmic contact at the etched position by using an evaporation methodAnd covering ohmic contact by using a mask, spin-coating a Cu-based promoter serving as a protective layer by using a spin-coating method, annealing for 30min at 300 ℃ in a vacuum tube furnace, naturally cooling to room temperature, and taking out to obtain the nitride device with the protective layer. The nitride device has higher absorption coefficient and good corrosion resistance, can be used as a photoanode material in artificial photosynthesis, and has important significance for reducing the concentration of carbon dioxide in air and developing energy sources.)