阅读说明：本技术 基于纳米粒子点阵的柔性场效应晶体管及制备方法和应用 (Flexible field effect transistor based on nano particle lattice and preparation method and application thereof ) 是由 李子昂 陈敏瑞 韩民 于 2021-08-10 设计创作，主要内容包括：本发明公开了基于纳米粒子点阵的柔性场效应晶体管及制备方法和应用,所述场效应晶体管以高分子聚合物薄膜为基底,纳米粒子点阵为导电沟道,并通过栅极电压的改变调控纳米粒子点阵中的库仑阻塞作用,从而调控纳米粒子点阵两侧电极之间的电流,实现柔性场效应晶体管的功能。与现有技术相比,本发明具有以下优点：(1)能够通过栅极电压调控金属纳米粒子点阵隧穿电导,因此可以灵敏地响应栅极电压对源漏极电流的影响；(2)具有体积小、能耗低、低噪声、高柔性的优点；(3)具有很高的灵敏度,结构简单,成本低,能够模块化制备与封装,可用于柔性集成电路,微电极系统等多种领域。(The invention discloses a flexible field effect transistor based on a nano particle lattice, a preparation method and application thereof. Compared with the prior art, the invention has the following advantages: (1) the metal nanoparticle lattice tunneling conductance can be regulated and controlled through the grid voltage, so that the influence of the grid voltage on the source-drain current can be sensitively responded; (2) the device has the advantages of small volume, low energy consumption, low noise and high flexibility; (3) the flexible packaging structure has the advantages of high sensitivity, simple structure and low cost, can be prepared and packaged in a modularized way, and can be used in various fields such as flexible integrated circuits, microelectrode systems and the like.)

1. The flexible field effect transistor based on the nano particle lattice is characterized in that the field effect transistor takes a high molecular polymer film as a substrate, the nano particle lattice is a conductive channel, and the coulomb blocking effect in the nano particle lattice is regulated and controlled through the change of grid voltage, so that the current between electrodes on two sides of the nano particle lattice is regulated and controlled, and the function of the flexible field effect transistor is realized.

2. The flexible field effect transistor based on the nano particle lattice is characterized in that the field effect transistor comprises a high polymer insulating substrate film (2), a nano particle lattice conducting channel (5) arranged on one side of the film, and a grid (1) arranged on the other side of the film, wherein a source electrode (3) and a drain electrode (4) are respectively arranged on two sides of the nano particle lattice conducting channel (5).

3. The flexible field effect transistor based on the nano particle lattice as claimed in claim 2, wherein the thickness of the insulating substrate film (2) of high molecular polymer is 0.0001mm-0.5mm, and the resistivity is higher than 10⁹Ω·m。

4. The nanoparticle lattice based flexible field effect transistor according to claim 2, wherein the high molecular polymer insulating substrate film (2) is polyethylene terephthalate, polymethyl methacrylate or polydimethylsiloxane.

5. The flexible field effect transistor based on the nano particle lattice as claimed in claim 2, wherein the material of the nano particle lattice conducting channel (5) is metal nano particles of gold, silver, palladium, chromium, aluminum, or semiconductor quantum dots doped with silicon, gallium arsenide, boron nitride, the coverage rate of the nano particle lattice is 60% -80%, and the particle size of the nano particles is 5nm-30 nm.

6. The flexible nanoparticle lattice-based field effect transistor according to claim 2, characterized in that the gate (1) voltage ranges from-100V to 100V.

7. The flexible field effect transistor based on the nano particle lattice as claimed in claim 2, wherein the source electrode (3) and the drain electrode (4) are made of conductive metal of gold, silver, aluminum or conductive compound of indium tin oxide, the thickness is 50nm-300nm, the area is 1mm²-100mm²The width between two electrodes is 1-100 μm.

8. The method for preparing the flexible field effect transistor based on the nano particle lattice as claimed in any one of claims 1 to 7, wherein the method comprises the following steps:

s1, selecting a clean high-molecular polymer insulating substrate film (2) with a smooth and scratch-free surface as a substrate, and plating a source electrode (3), a drain electrode (4) and a grid electrode (1) on the film;

s2, generating a nanoparticle beam current through a gas cluster source, and depositing a nanoparticle lattice conducting channel (5) between a source electrode (3) and a drain electrode (4);

s3, connecting the source electrode (3) and the drain electrode (4) through electrode leads, connecting a bias power supply of the source electrode (3) and the drain electrode (4) and a power supply of the grid electrode (1), and measuring an external circuit of the conductance of the nano particles, and regulating and controlling the coulomb blockade effect in the nano particle lattice through the change of the voltage of the grid electrode (1), thereby regulating and controlling the current between the source electrode (3) and the drain electrode (4) on two sides of the nano particle lattice, and realizing the function of the flexible field effect transistor.

9. Use of the nanoparticle lattice based flexible field effect transistor of any one of claims 1 to 7 in the manufacture of a flexible integrated circuit.

10. Use of the flexible field effect transistor based on the nanoparticle lattice according to any of claims 1 to 7 for the preparation of microelectrode systems.

Technical Field

The invention belongs to a voltage control electrical device, and relates to an improvement of a field effect transistor in a succession integrated circuit or a micro-electrode system, in particular to a flexible field effect transistor based on a nano particle lattice, a preparation method and an application.

Background

A field effect transistor is an electrical element that conducts electricity by a carrier and controls an output current with an input voltage, and has an indispensable role in the fields of information transfer, integrated circuits, automation control, and the like. Field effect transistors are largely divided into two types: respectively, a junction field effect transistor and a metal-oxide semiconductor field effect transistor, both having low noise and high input resistance (10)⁷-10¹⁵Omega), large dynamic range, low power consumption, easy integration, no secondary breakdown phenomenon, simple manufacturing process, contribution to large-scale integration and the like, thereby being often used as an important element of the core integrated circuit technology in the microelectronic field. The field effect transistor based on nano particles and lattice thereof belongs to a single electronic device, the working mechanism of the field effect transistor is completely different from that of the traditional junction field effect transistor and the metal-oxide semiconductor field effect transistor, the novel nano device more utilizes the advantage of quantum mechanical phenomenon under the nano scale, realizes corresponding logic operation by controlling the transmission of electrons in the nano lattice, and has the advantages of ultrahigh sensitivity, ultramicro power consumption and ultralow noise. The single electron transistor has the basic components of tunneling junction and Coulomb island, and the electron generates quantum tunneling to form source and drain current through the tunneling junction, so that the single electron can complete the transport characteristic. The single-electron nanometer device provides a new solution for overcoming short channel effect.

Flexible electronic devices are an emerging electronic technology for fabricating organic/inorganic material electronic devices on flexible/ductile substrates. Compared with a traditional flexible electronic device, the flexible electronic device has higher flexibility, can adapt to different working environments to a certain extent, and meets the deformation requirement of equipment. The importance of flexible electronic devices in various fields of information, energy, medical treatment, manufacturing, and the like is becoming increasingly prominent. Traditional semiconductor devices use inorganic materials such as silicon as a substrate, and the substrate does not have ductility, so that the traditional semiconductor devices are difficult to be compatible with flexible devices, and the development of flexible electronic equipment is restricted. Flexible electronic devices present new challenges and requirements for the materials from which the circuits are made, the conditions under which they are made, and the performance of the various electronic devices that make up the circuits.

In the prior art, a nano particle lattice is deposited on a flexible material, micro deformation on a substrate is induced through tunneling conductance, and on the basis of the micro deformation, a series of nano particle lattice quantum conductance stress strain sensors, vibration sensors and air pressure sensors (refer to nat. Commun.2019,10(1),4024. reference patents such as CN109700451A and the like) are developed, but a device for depositing the nano particle lattice on the flexible material and using the nano particle lattice on a field effect transistor is not researched and developed yet.

Disclosure of Invention

The technical problem to be solved is as follows: in order to overcome the defects of the prior art, the invention adopts a nano particle lattice conducting channel to replace the traditional conducting channel, and uses an insulating organic high polymer film to replace a substrate silicon wafer of the traditional field effect transistor device. And coating a source drain electrode for measuring the lattice conductance of the nano particles on the surface of the film, and depositing a metal nano particle lattice with a certain coverage rate between the electrodes. And coating a grid on the back of the high polymer film, and regulating and controlling the coulomb blockage effect in the nano particle lattice through the size of grid voltage so as to regulate and control the current between a source electrode and a drain electrode and realize the function of a field effect transistor. The tunneling conductance of the nano particle lattice is highly sensitive to the coverage rate of the nano particles, so that the controllable preparation of the nano particle lattice with the preset coverage rate can be realized by monitoring the conductance of the nano particle lattice. In view of the above, the invention provides a flexible field effect transistor based on a nanoparticle lattice, a preparation method and an application thereof.

The technical scheme is as follows: the field effect transistor takes a high-molecular polymer film as a substrate, the nano particle lattice is a conductive channel, and the coulomb blocking effect in the nano particle lattice is regulated and controlled through the change of grid voltage, so that the current between electrodes on two sides of the nano particle lattice is regulated and controlled, and the function of the flexible field effect transistor is realized.

Preferably, the field effect transistor comprises a high molecular polymer insulating substrate film, a nano particle lattice conducting channel arranged on one side of the film, and a grid arranged on the other side of the film, wherein a source electrode and a drain electrode are respectively arranged on two sides of the nano particle lattice conducting channel.

Preferably, the thickness of the high molecular polymer insulating substrate film is 0.0001mm-0.5mm, and the resistivity is higher than 10⁹Ω·m。

Preferably, the high molecular polymer insulating substrate film is polyethylene terephthalate, polymethyl methacrylate or polydimethylsiloxane.

Preferably, the material of the nano particle lattice conducting channel is metal nano particles of gold, silver, palladium, chromium and aluminum or semiconductor quantum dots doped with silicon, gallium arsenide and boron nitride, the coverage rate of the nano particle lattice is 60-80%, and the particle size of the nano particles is 5-30 nm.

Preferably, the gate voltage ranges from-100V to 100V.

Preferably, the source electrode and the drain electrode are made of conductive metal such as gold, silver and aluminum or conductive compound such as indium tin oxide, the thickness of each conductive metal is 50nm-300nm, and the area of each conductive metal is 1mm²-100mm²The width between two electrodes is 1-100 μm.

The preparation method of any one of the flexible field effect transistors based on the nanoparticle lattice comprises the following steps:

s1, selecting a clean high-molecular polymer insulating substrate film with a smooth and scratch-free surface as a substrate, and plating a source electrode, a drain electrode and a grid electrode on the film;

s2, generating a nano particle beam by a gas cluster gathering source, and depositing a nano particle lattice conducting channel between a source electrode and a drain electrode;

and S3, connecting the source electrode and the drain electrode through electrode leads, accessing a source electrode, a drain electrode bias power supply and a grid power supply, and measuring an external circuit of the nano particle conductance, and regulating and controlling the coulomb blockade effect in the nano particle lattice through the change of the grid voltage, so as to regulate and control the current between the source electrode and the drain electrode on two sides of the nano particle lattice, and realize the function of the flexible field effect transistor.

The application of any one of the flexible field effect transistors based on the nano particle lattice in the preparation of a flexible integrated circuit.

The application of any one of the flexible field effect transistors based on the nano particle lattice in preparing a microelectrode system.

The working principle of the flexible field effect transistor based on the nano particle lattice is as follows: the invention adopts a flexible substrate and a controllable nano particle deposition mode to complete the preparation of the flexible field effect transistor, which is essentially a voltage-current regulation field effect transistor device. The difference lies in that the invention does not form a conductive channel through a traditional inversion layer, but utilizes an electron transport process based on quantum tunneling conductance and coulomb blockade effect in a nano particle lattice. In the nano particle lattice, the surface distance between adjacent nano particles is 1nm, so that a bias voltage higher than a threshold value is applied to two sides of the lattice, the nano particle lattice has a tunneling conductance, and a single nano particle can be used as a tunnel junction. Meanwhile, the nano particle lattice has coulomb blocking effect, and the tunneling current between the source electrode and the drain electrode depends on the degree of coulomb blocking. And the state of coulomb blockage can be changed through the grid voltage, so that the tunneling current between the source electrode and the drain electrode is changed. Therefore, the field effect transistor prepared based on the nano particle lattice has very sensitive response to the regulation and control of the grid voltage. The device based on the nano particle lattice and the flexible substrate can break through the limitation of the short channel effect of the metal-oxide semiconductor field effect transistor on one hand, and can overcome the defect that the traditional silicon-based technology cannot be applied to the flexible device on the other hand.

Has the advantages that: (1) the flexible field effect transistor based on the nano particle lattice can regulate the tunneling conductance of the metal nano particle lattice through the grid voltage, so that the field effect transistor can sensitively respond to the influence of the grid voltage on the source and drain current; (2) the field effect transistor has the advantages of small volume, low energy consumption, low noise and high flexibility; (3) the field effect transistor has the advantages of high sensitivity, simple structure and low cost, can be prepared and packaged in a modularized way, and can be used in various fields such as flexible integrated circuits, microelectrode systems and the like.

Drawings

FIG. 1 is a schematic structural diagram of a field effect transistor based on a nanoparticle lattice according to the present invention;

wherein, 1 is a grid, 2 is a high molecular polymer insulating substrate film, 3 is a source electrode, 4 is a drain electrode, and 5 is a nano particle lattice conductive channel;

FIG. 2 is a variation curve of the source-drain current according to the variation of the gate voltage in example 1; v_dsIs the source drain voltage, I_dsIs a source-drain current, V_gIs the gate voltage; wherein A is grid voltage of 0-100V, B is grid voltage of-100-0V;

FIG. 3 is a variation curve of the source-drain current according to the variation of the gate voltage in embodiment 2; v_dsIs the source drain voltage, I_dsIs a source-drain current, V_gIs the gate voltage; wherein A is grid voltage of 0-100V, B is grid voltage of-100-0V;

fig. 4 is a diagram showing the simulation result of the daily working scene of the field effect transistor according to the present invention.

Detailed Description

The following examples further illustrate the present invention but are not to be construed as limiting the invention. Modifications and substitutions to methods, procedures, or conditions of the invention may be made without departing from the spirit and substance of the invention. Unless otherwise specified, the technical means used in the examples are conventional means well known to those skilled in the art.

Example 1

As shown in fig. 1, the field effect transistor based on the nanoparticle lattice uses a high molecular polymer film as a substrate, the nanoparticle lattice is a conductive channel, and coulomb blockade in the nanoparticle lattice is regulated and controlled by changing a gate voltage, so that current between electrodes at two sides of the nanoparticle lattice is regulated and controlled, and a function of the flexible field effect transistor is realized.

The field effect transistor comprises a high polymer insulating substrate film 2, a nano particle lattice conducting channel 5 arranged on one side of the film, and a grid 1 arranged on the other side of the film, wherein a source electrode 3 and a drain electrode 4 are respectively arranged on two sides of the nano particle lattice conducting channel 5.

Wherein the thickness of the high molecular polymer insulating substrate film 2 is 0.05mm, and the resistivity is 1 × 10⁹Omega.m; the high molecular polymer insulating substrate film 2 is polyethylene terephthalate.

The nano particle lattice conducting channel 5 is made of metal nano particles of palladium, the coverage rate of the nano particle lattice is 60%, and the particle size of the nano particles is 15 nm.

The voltage range of the grid 1 is-100V-100V; the source electrode 3 and the drain electrode 4 are made of silver, the thickness of the source electrode and the drain electrode is 100nm, and the area of the source electrode and the drain electrode is 50mm²The width between both electrodes was 30 μm.

The flexible field effect transistor based on the nano particle lattice is prepared by the following method, and the method comprises the following steps:

s1, selecting a clean high-molecular polymer insulating substrate film 2 with a smooth and scratch-free surface as a substrate, and plating a source electrode 3, a drain electrode 4 and a grid electrode 1 on the film;

s2, generating a nanoparticle beam current by a cluster source gathered by magnetron plasma gas, and depositing a nanoparticle lattice conducting channel 5 between a source electrode 3 and a drain electrode 4;

s3, connecting the source electrode 3 and the drain electrode 4 through electrode leads, accessing a bias power supply of the source electrode 3 and the drain electrode 4 and a power supply of the grid electrode 1, and measuring the conductance of the nano particles, and regulating and controlling the coulomb blocking effect in the nano particle lattice through the change of the voltage of the grid electrode 1, thereby regulating and controlling the current between the source electrode 3 and the drain electrode 4 at two sides of the nano particle lattice and realizing the function of the flexible field effect transistor.

As shown in FIG. 2, the gate 1, the source 3 and the drain 4 are connected to a test circuit via copper wires, the gate voltage is changed, and the gate voltage V is recorded_gTo source drain current I_dsThe influence of (1) measuring the change of the source leakage current of the nano particle field effect transistor along with the real-time response curve of the grid voltage by placing the field effect transistor in a test circuit is shown in figure 2, and it can be seen from the figure that the source leakage current has obvious change along with the increase of the grid voltage, the change amplitude is more than 10 percent, and no matter the current is in positive bias or reverse biasThe phase bias voltage has good response.

Example 2

The difference from example 1 is that the coverage of the nanoparticle lattice is 80%.

As shown in FIG. 3, the gate 1, the source 3 and the drain 4 are connected to a test circuit via copper wires, the voltage of the gate 1 is changed, and the gate voltage V is recorded_gTo source drain current I_dsThe influence of (3) is that the field effect transistor is placed in a test circuit, the change of the source leakage current of the nano particle field effect transistor along with the real-time response curve of the grid voltage is measured, as shown in figure 3, when the deposition rate is improved, the source leakage current also obviously changes along with the increase of the grid voltage, and the method is effective to both forward bias and reverse bias.

Example 3

In order to verify that the flexible field effect transistor based on the nano particle lattice can work in daily use scenes, the field effect transistor is connected to an external circuit, a voltage of 5V is added, and the response condition of source and drain currents along with the grid voltage is recorded, and as a result, as shown in fig. 4, it can be seen that the source and drain currents can make effective response along with the change of the grid voltage. The test proves the reliability of the operation of the field effect transistor of the present invention, and the field effect transistor can be put into industrial production for use.