阅读说明：本技术 硅基光伏器件面电极材料处理工艺 (Treatment process of silicon-based photovoltaic device surface electrode material ) 是由 周祥 于 2021-08-31 设计创作，主要内容包括：本发明属于硅基光伏器件技术领域,尤其是硅基光伏器件面电极材料处理工艺,针对存在的吸光效率和载流传输能力不佳的问题,现提出以下方案,包括以下步骤,S1,纳米Si-P.T-Ag复合材料、ECA(粘合剂)、AB(乙炔黑)分别以75-80%、5-10%、5-10%的比例准确称取,放入球研磨机中研磨均匀,得到纳米混合料。本发明采用硅-聚噻吩-银离子阵列替代平面硅作为光吸收层,由于硅线优异的吸光能力和有效的载流子传输能力,配合上该样品具有较高容量保持率,其中聚噻吩和银离子配合本身具有一些特殊的功能,保持了样品具有较高容量保持率,提升了其较好的电子导电率和较高的弹性模量。(The invention belongs to the technical field of silicon-based photovoltaic devices, in particular to a treatment process of a silicon-based photovoltaic device surface electrode material, and provides a scheme aiming at the problem of poor light absorption efficiency and current-carrying transmission capacity, wherein the method comprises the following steps of S1, accurately weighing a nano Si-P.T-Ag composite material, an ECA (adhesive) and AB (acetylene black) according to the proportion of 75-80%, 5-10% and 5-10%, and uniformly grinding the materials in a ball grinder to obtain a nano mixture. According to the invention, the silicon-polythiophene-silver ion array is adopted to replace planar silicon to serve as the light absorption layer, and the sample has a high capacity retention rate due to the excellent light absorption capacity and effective carrier transmission capacity of a silicon line, wherein the polythiophene and silver ion have some special functions in cooperation, so that the sample is kept to have the high capacity retention rate, and the good electronic conductivity and the high elastic modulus of the sample are improved.)

1. The treatment process of the silicon-based photovoltaic device surface electrode material is characterized by comprising the following steps of:

s1: accurately weighing the nano Si-P.T-Ag composite material, the ECA (adhesive) and the AB (acetylene black) according to the proportion of 75-80%, 5-10% and 5-10%, and uniformly grinding the materials in a ball grinder to obtain a nano mixture;

the preparation method of the nano Si-P.T-Ag composite material in the S1 comprises the following steps:

s1-1: adding a dispersing agent PC into a material preparation tank, adding a proper amount of distilled water, stirring for l.0-1.2h under a magnetic stirrer, adding nano silicon powder, and continuously stirring to obtain a dispersion liquid A;

s1-2: taking a proper amount of EDOT (thiophene monomer) by a pipette from the dispersion liquid A, dripping the EDOT (thiophene monomer) into a beaker, and continuously stirring for 2.0-2.4h to uniformly disperse the EDOT and the thiophene monomer to obtain a dispersion liquid B;

s1-3: adding AgNO3 with concentration of 1.7-2.3g/ml into the dispersion B, slowly dripping into the preparation tank, adding dissolved reducing agents NaBr and NH2OH, reducing with AgNO3 to obtain silver particles, adding dissolved Ag₂Solution of O, continuous consumption of excess reducing agent NaBr and NH₂OH, adding sodium persulfate to oxidize a thiophene monomer to generate polythiophene, and attaching the polythiophene and silver particles to the silicon surface to obtain the nano Si-P.T-Ag composite material;

s2: dropwise adding NMP (N-methyl pyrrolidone) into a ball mill by a dropper, dissolving the nano mixture into NMP, and grinding at low speed until a black viscous pasty substance is formed;

s3: cutting a polyimide film into rectangles, sucking the rectangles on a flat polyethylene plate by using a vacuum water pump, dipping a small amount of acetone to wipe the surface of the polyimide film, removing impurities such as grease and the like, then adding a black sticky pasty substance in S2 into ECA to form a fluid shape, casting the fluid shape on the polyimide film, then spin-coating by using a metal sheet, simultaneously covering a material layer with the thickness of about 0.10-0.15 mm by casting each time, wherein the casting frequency is 3-5 times, and forming the film profile electrode material with the thickness of 0.25-0.40 mm;

s6: and (3) putting the film profile electrode material which is uniformly cast into a vacuum drying box, setting the temperature at 100-105 ℃, carrying out vacuum drying for 10-13h, and taking out after cooling.

2. The processing technology of the silicon-based photovoltaic device surface electrode material as claimed in claim 1, wherein the ratio of the amount of the dispersant PC to the distilled water in S1-1 is that the concentration of the dispersant solution is 15.9-16.3mg/L, and the ratio of the mass parts of the dispersant PC to the nano silicon powder is 1.0: 58.0-62.0.

3. The process for treating the face electrode material of the silicon-based photovoltaic device as claimed in claim 1, wherein the amount of EDOT in S1-2 is 1.25-1.30ml, and the efficiency of polythiophene formed by polymerization of EDOT is 82-92%.

4. The treatment process for the surface electrode material of the silicon-based photovoltaic device according to claim 1, wherein the concentration of NMP in S2 is 2.3-3.7 mg/L.

5. The process for processing the surface electrode material of the silicon-based photovoltaic device as claimed in claim 1, wherein the specification of the polyimide film is determined according to the specification of the surface electrode material, wherein the polyimide film can be obtained by the steps of PEDOT: PSS film material replacement.

6. The process for processing the surface electrode material of the silicon-based photovoltaic device as claimed in claim 1, wherein in the step S3, after the material layer is spin-coated on the surface of the polyimide film, the surface of the polyimide film is passivated by methylation treatment.

Technical Field

The invention relates to the technical field of silicon-based photovoltaic devices, in particular to a treatment process of a surface electrode material of a silicon-based photovoltaic device.

Background

The silicon-based solar cell mainly comprises a monocrystalline silicon solar cell, an amorphous silicon thin film solar cell and a polycrystalline silicon thin film solar cell. Among them, the monocrystalline silicon solar cell has the highest conversion efficiency and occupies an absolutely dominant position in the current commercial solar cell market. Martin Green et al, university of New south Wilson, Australia, reports that the photoelectric conversion efficiency of a monocrystalline silicon solar cell under standard conditions reaches 24.7%, which is the highest value published and reported in the field of current silicon-based solar cells and is very close to the upper limit of a theoretical calculation value of the silicon-based solar cell. The conversion efficiency is undoubtedly very competitive, but due to the influence of high price of raw materials and complex manufacturing process, the cost is too high, and the large-scale civil photovoltaic power generation is not easy to realize.

For example, the publication number CN101474897 discloses a graphene-organic material layered assembly film and a preparation method thereof, which is a layered assembly film based on graphene and organic materials and a preparation method thereof. The method has wide application potential in the aspects of film material science, optical, electric and magnetic information conversion and processing devices, bioengineering, surface engineering, molecular construction and the like.

However, the electrode prepared by the graphene organic material layer-by-layer assembly is complex in preparation process, the elastic modulus and the conductivity of many materials are not optimal, and the light absorption capacity and the effective carrier transmission capacity are not optimal due to photoelectric conversion in many cases.

Disclosure of Invention

The treatment process of the silicon-based photovoltaic device surface electrode material provided by the invention solves the problems of poor light absorption efficiency and poor current-carrying transmission capability.

In order to achieve the purpose, the invention adopts the following technical scheme:

the treatment process of the silicon-based photovoltaic device surface electrode material comprises the following steps:

s1: accurately weighing the nano Si-P.T-Ag composite material, the ECA (adhesive) and the AB (acetylene black) according to the proportion of 75-80%, 5-10% and 5-10%, and uniformly grinding the materials in a ball grinder to obtain a nano mixture;

the preparation method of the nano Si-P.T-Ag composite material in the S1 comprises the following steps:

s1-1: adding a dispersing agent PC into a material preparation tank, adding a proper amount of distilled water, stirring for l.0-1.2h under a magnetic stirrer, adding nano silicon powder, and continuously stirring to obtain a dispersion liquid A;

s1-2: taking a proper amount of EDOT (thiophene monomer) by a pipette from the dispersion liquid A, dripping the EDOT (thiophene monomer) into a beaker, and continuously stirring for 2.0-2.4h to uniformly disperse the EDOT and the thiophene monomer to obtain a dispersion liquid B;

s1-3: adding AgNO3 with concentration of 1.7-2.3g/ml into the dispersion B, slowly dripping into the preparation tank, adding dissolved reducing agents NaBr and NH2OH, reducing with AgNO3 to obtain silver particles, adding dissolved Ag₂Solution of O, continuous consumption of excess reducing agent NaBr and NH₂OH, adding sodium persulfate to oxidize a thiophene monomer to generate polythiophene, and attaching the polythiophene and silver particles to the silicon surface to obtain the nano Si-P.T-Ag composite material;

s2: dropwise adding NMP (N-methyl pyrrolidone) into a ball mill by a dropper, dissolving the nano mixture into NMP, and grinding at low speed until a black viscous pasty substance is formed;

s3: cutting a polyimide film into rectangles, sucking the rectangles on a flat polyethylene plate by using a vacuum water pump, dipping a small amount of acetone to wipe the surface of the polyimide film, removing impurities such as grease and the like, then adding a black sticky pasty substance in S2 into ECA to form a fluid shape, casting the fluid shape on the polyimide film, then spin-coating by using a metal sheet, simultaneously covering a material layer with the thickness of about 0.10-0.15 mm by casting each time, wherein the casting frequency is 3-5 times, and forming the film profile electrode material with the thickness of 0.25-0.40 mm;

s6: and (3) putting the film profile electrode material which is uniformly cast into a vacuum drying box, setting the temperature at 100-105 ℃, carrying out vacuum drying for 10-13h, and taking out after cooling.

As a further scheme of the invention, the ratio of the amount of the dispersing agent PC in S1-1 to the distilled water is that the concentration of the dispersing agent solution is 15.9-16.3mg/L, and the ratio of the mass parts of the dispersing agent PC to the nano silicon powder is 1.0: 58.0-62.0.

As a further scheme of the invention, the amount of EDOT in S1-2 is 1.25-1.30ml, and the efficiency of polythiophene formed by polymerization of EDOT is 82-92%.

As a further embodiment of the present invention, the concentration of NMP in S2 is 2.3-3.7 mg/L.

As a further aspect of the present invention, the specification of the polyimide film is determined according to the specification of the face electrode material, wherein the polyimide film can be formed by PEDOT: PSS film material replacement.

In a further embodiment of the present invention, in S3, a material layer is spin-coated on the surface of the polyimide film, and then a methylation process is performed to passivate the surface of the film.

Compared with the prior art, the invention has the beneficial effects that: in the electrode material treatment process, a silicon-polythiophene-silver ion array is adopted to replace planar silicon to serve as a light absorption layer, and due to the excellent light absorption capacity and the effective carrier transmission capacity of a silicon wire, the sample has a high capacity retention rate when matched, wherein the polythiophene and silver ions have some special functions when matched, the sample is kept to have the high capacity retention rate, the good electronic conductivity and the high elastic modulus of the sample are improved, the volume expansion of the silicon in the lithium desorption and insertion process can be relieved, and the response rate of the electrode material is greatly improved from 0.30-0.32A/W to 0.50-0.55A/W.

Drawings

FIG. 1 is a process flow diagram of a process for treating a surface electrode material of a silicon-based photovoltaic device according to the present invention;

fig. 2 is a structural table of materials of examples 1 to 4 of the treatment process of the electrode material on the surface of the silicon-based photovoltaic device provided by the invention.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.

In the description of the present invention, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention.

Example 1

Referring to fig. 1: the treatment process of the silicon-based photovoltaic device surface electrode material comprises the following steps:

s1: accurately weighing the nano Si-P.T-Ag composite material, the ECA (adhesive) and the AB (acetylene black) according to the proportion of 75-80%, 5-10% and 5-10%, preferably 8:1:1, and uniformly grinding the materials in a ball grinder to obtain a nano mixture;

the preparation method of the nano Si-P.T-Ag composite material in the S1 comprises the following steps:

s1-1: adding dispersant PC into a material preparation tank, adding a proper amount of distilled water to prepare the mixture to be 15.9-16.3mg/L, stirring for l.0-1.2h under a magnetic stirrer, adding nano silicon powder with the proportion of 1.0:58.0-62.0 to the dispersant PC, and continuously stirring to obtain dispersion A;

s1-2: in the dispersion liquid A, 1.25-1.30ml of EDOT (thiophene monomer) is taken by a pipette, and is dripped into a beaker, and is continuously stirred for 2.0-2.4h to ensure that the EDOT and the thiophene monomer can be uniformly dispersed, so as to obtain a dispersion liquid B;

s1-3: AgNO3 with concentration of 1.7-2.3g/ml is poured into the dispersion B and slowly dripped into the preparation tank, and then NaBr with concentration of 3.5-4.2g/ml and 4.0-5.8g/ml NH are added into the solution by dissolved reducing agent₂OH is slowly dripped into the preparation tank to perform reduction reaction with AgNO3 to generate silver particles, and then dissolved Ag is added₂Solution of O, continuous consumption of excess reducing agent NaBr and NH₂OH, adding sodium persulfate with the concentration of 12.3-13.4g/ml to oxidize a thiophene monomer to generate polythiophene, and attaching the polythiophene and silver particles to the silicon surface to obtain the nano Si-P.T-Ag composite material;

s2: dripping 2.3-3.7mg/L NMP (N-methyl pyrrolidone) into a ball mill by a dropper, dissolving the nano mixture into NMP, and grinding at low speed until a black viscous pasty substance is formed;

s3: cutting a polyimide film into rectangles, sucking the polyimide film on a flat polyethylene plate by using a vacuum water pump according to the specification of a surface electrode material, dipping a small amount of acetone to wipe the surface of the polyimide film, removing impurities such as grease and the like, then adding a black sticky pasty substance in S2 into ECA to form a fluid shape, casting the fluid shape on the polyimide film by using a metal sheet for spin coating, carrying out methylation treatment after the material layer is spin-coated on the surface to passivate the surface of the film, simultaneously covering the material layer with the thickness of 0.10-0.15 mm by each casting, wherein the casting frequency is 3-5 times, and forming the film profile electrode material with the thickness of 0.25-0.40 mm;

s6: and (3) putting the film profile electrode material which is uniformly cast into a vacuum drying box, setting the temperature at 100-105 ℃, carrying out vacuum drying for 10-13h, and taking out after cooling.

Example 2

Referring to fig. 2, a processing process of a surface electrode material of a silicon-based photovoltaic device in this embodiment is mainly different from that in embodiment 1 in that the substrate is made of PEDOT: the PSS film material, wherein poly 3, 4-ethylenedioxythiophene/polystyrene sulfonic acid (PEDOT-PSS) has excellent photoelectric properties and is widely applied to the field of organic optoelectronic devices, and the PEDOT-PSS is a polymer colloid dispersion solution and can be conveniently used for preparing organic ultrathin films.

The following is an electrostatic self-assembly method, which comprises the following specific steps:

a KSV-5000 LB film forming system (KSV corporation, Finland) is used for preparing the film, 0.1 mL of PEDOT-PSS solution is taken for ultrasonic treatment for 15 min, then filtering with 0.45 um PVDF filter membrane, bathing in ultrapure water with certain volume, then performing ultrasonic treatment for 15 min, finally adding into LB tank, spreading 80 mL of octadecylamine chloroform solution (0.5 ng/mL) or octadecylamine-duckling acid (molar ratio 2:1) chloroform solution in subphase, stabilizing for 30min to completely volatilize chloroform, and PEDOT-PSS colloidal particles are electrostatically attached to the monomolecular film, the monomolecular film is compressed by a computer-controlled compression bar at the speed of 0.5 mm/min, simultaneously recording the change of the film pressure, keeping the film pressure to repeatedly compress the monomolecular layer for 30min after the film pressure reaches a set value, the composite film was then transferred to a substrate at a rate of 1 mm/min, and different numbers of layers of LB film were deposited on the quartz substrate.

Example 3

Referring to FIG. 2, a process for treating a surface electrode material of a silicon-based photovoltaic device, in this embodiment, is described with respect to a solidExample 1 mainly differs from this example in that, for the polyimide flexible substrate silicon-based thin film solar cell, due to the limitation of the polymer substrate material, the material preparation needs to adopt an inverted structure (n-p) and a relatively low deposition temperature (160-^-4O.cm。

In the invention, an Al (5 wt%) doped ZnO ceramic target is selected, the target and a polyimide film are in the same rectangular shape and are oppositely placed and bonded, the polyimide film is firstly cleaned in an ultrasonic instrument by adding acetone into deionized water, then the polyimide film is placed in a vacuum drying oven for drying, sputtering gas is high-purity Ar (99.999%), the total pressure range is 0.2 Pa to 1.0 Pa, sputtering current is 0.2A to 0.6A, sputtering voltage is fixed at 350V, a ZnO film is coated on a polyimide flexible substrate, then black viscous pasty substances are coated on the surface in a spinning mode, and a film profile electrode material with the thickness of 0.32-0.35mm is formed.

In examples 2 to 3, the photoelectric properties of the substrates were improved by changing the materials of the substrates or modifying the substrates.

Example 4

Referring to fig. 2, the treatment process of the electrode material on the surface of the silicon-based photovoltaic device comprises the following steps:

s1: accurately weighing the nano Si-PPY-Ag composite material, ECA (adhesive) and AB (acetylene black) according to the proportion of 75-80%, 5-10% and 5-10%, and uniformly grinding the materials in a ball grinder to obtain a nano mixture;

the preparation method of the nano Si-PPY-Ag composite material in S1 comprises the following steps:

s1-1: adding a dispersing agent N into a material preparation tank, adding a proper amount of distilled water to prepare the mixture to be 13.5-14.1mg/L, stirring for l.0-1.2h under a magnetic stirrer, adding nano silicon powder with the proportion of 1.0:58.0-62.0 to the dispersing agent PC, and continuously stirring to obtain a dispersion liquid A;

s1-2: in the dispersion liquid A, 1.20-1.25ml of thiophene monomer is taken by a pipette, and is dripped into a beaker, and is continuously stirred for 2.0-2.4 hours to ensure that the thiophene monomer can be uniformly dispersed, so as to obtain a dispersion liquid B;

s1-3: adding AgNO3 with concentration of 1.7-2.3g/ml into the dispersion liquid B, slowly dripping into a preparation tank, slowly dripping into the preparation tank with NaBr with concentration of dissolved reducing agent of 3.5-4.2g/ml and NH2OH with concentration of 4.0-5.8g/ml, performing reduction reaction with AgNO3 to generate silver particles, and adding Ag dissolved in the solution₂Solution of O, continuous consumption of excess reducing agent NaBr and NH₂OH, adding sodium persulfate with the concentration of 15-16g/ml to oxidize the pyrrole monomer to generate PPY (polypyrrole), and attaching PPY and silver particles to the silicon surface to obtain the nano Si-PPY-Ag composite material;

s2: dripping 2.0-2.5mg/L NMP (N-methyl pyrrolidone) into a ball mill by a dropper, dissolving the nano mixture into NMP, and grinding at low speed until a black viscous pasty substance is formed;

s3: the preparation method comprises the following steps of cutting a polyimide film into rectangles, sucking the polyimide film on a flat polyethylene plate by a vacuum water pump according to the specification of a surface electrode material, dipping a small amount of acetone to wipe the surface of the polyimide film, removing impurities such as grease and the like, adding a black sticky pasty substance in S2 into ECA to form a fluid state, and carrying out tape casting on the polyimide film and PEDOT: coating a PSS film material or a ZnO-Al polyimide film on a metal sheet in a spin coating manner, coating a material layer on the surface in a spin coating manner, performing methylation treatment to passivate the surface of the film, and simultaneously, covering the material layer with the thickness of 0.08-0.20 mm by each tape casting, wherein the tape casting frequency is 2-6 times, and forming a film profile electrode material with the thickness of 0.20-0.45 mm;

s6: and (3) putting the film profile electrode material with uniform casting into a vacuum drying oven, setting the temperature to be 95-102 ℃, carrying out vacuum drying for 9-11h, and taking out after cooling.

In example 4, polypyrrole was used as a conductive adhesive instead of polythiophene, so that the thermal property was more stable and the hole-suppressing effect was better.

The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention.