Photoacid generator for immersion ArF photoetching and intermediate thereof
阅读说明：本技术 一种浸没式ArF光刻用的光产酸剂及其中间体 (Photoacid generator for immersion ArF photoetching and intermediate thereof ) 是由 王溯 方书农 徐森 邹琴峰 于 2021-08-25 设计创作，主要内容包括：本发明公开了一种浸没式ArF光刻用的光产酸剂及其中间体。本发明的光产酸剂如式I所示。含有本发明的光产酸剂的光刻胶的具有分辨率高、灵敏度高和线宽粗糙度低的优点,具有良好的应用前景。(The invention discloses a photoacid generator for immersion ArF photoetching and an intermediate thereof. The photoacid generator of the present invention is represented by formula I. Comprises a notebookThe photoresist of the photoacid generator has the advantages of high resolution, high sensitivity and low line width roughness, and has good application prospect.)
1. A compound of formula I:
wherein R is1、R2、R3、R4And R5Independently of one another H, halogen, C1-6Alkyl or-O-C1-6An alkyl group;
n is 2 or 3;
a is S or I;
y is C6-14Aryl radical, quilt Y-1Substituted C6-14Aryl or
Y-1Is hydroxy, C1-6Alkyl or-O-C1-6An alkyl group;
m is C6-14Aryl radicals, quilt M-1Substituted C6-14Aryl or absent;
M-1independently is C1-6Alkyl or-O-C1-6An alkyl group.
2. The compound of formula I according to claim 1, wherein the compound of formula I satisfies one or more of the following conditions:
①R1、R2、R3、R4and R5Wherein the halogen is F, Cl, Br or I;
②R1、R2、R3、R4and R5In (b), the C1-6Alkyl and said-O-C1-6C in alkyl1-6Alkyl is independently methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, or tert-butyl;
③ in Y, C6-14Aryl and said quilt Y-1Substituted C6-14C in aryl6-14Aryl is independently phenyl, naphthyl, phenanthryl or anthracyl;
④Y-1in (b), the C1-6Alkyl and said-O-C1-6C of alkyl1-6Alkyl is independently methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, or tert-butyl;
m in C6-14Aryl and quilt M-1Substituted C6-14C in aryl6-14Aryl is independently phenyl, naphthyl, phenanthryl or anthracyl;
⑥M-1in (b), the C1-6Alkyl and said-O-C1-6C in alkyl1-6Alkyl is independently methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl or tert-butyl.
3. The compound of formula I according to claim 2, wherein the compound of formula I satisfies one or more of the following conditions:
in (Y), the quilt Y-1Substituted C6-14Aryl is
② when the Y is the C6-14Aryl or said quilt Y-1Substituted C6-14Aryl radical, said C6-14Aryl and said quilt Y-1Substituted C6-14C in aryl6-14When aryl is independently phenyl, saidIs composed of
③ M, the quilt M-1Substituted C6-14Aryl is
4. The compound of formula I according to claim 1, wherein the compound of formula I satisfies one or more of the following conditions:
①R1、R2、R3、R4and R5Is H;
n is 3;
(iii) A is S
④Y-1Is hydroxy or-O-C1-6An alkyl group;
⑤M-1independently is C1-6An alkyl group.
5. The compound of formula I according to claim 1, wherein the compound of formula I satisfies one or more of the following conditions:
①is composed of
Y is
6. A compound of formula I according to claim 1, wherein R is1、R2、R3、R4And R5Is H;
n is 3;
a is S;
y is C6-14Aryl radical, quilt Y-1Substituted C6-14Aryl or
Y-1Is hydroxy or-O-C1-6An alkyl group;
m is C6-14Aryl radicals, quilt M-1Substituted C6-14Aryl or absent;
M-1independently is C1-6An alkyl group.
7. The compound of formula I according to claim 1, wherein the compound of formula I is any one of the following compounds:
8. a compound II:
wherein Y is as defined in any one of claims 1 to 7; n is an alkali metal.
9. The compound of claim 8, wherein in N, the alkali metal is Li, Na or K.
10. The compound II according to claim 8, wherein said compound II is any one of the following compounds:
Technical Field
The invention relates to a photoacid generator for immersion ArF photoetching and an intermediate thereof.
Background
The photolithography technique is a fine processing technique for transferring a pattern designed on a mask plate to a pattern on a substrate by using the chemical sensitivity of a photolithography material (particularly a photoresist) under the action of visible light, ultraviolet rays, electron beams and the like through the processes of exposure, development, etching and the like. The photoresist material (specifically referred to as photoresist), also called photoresist, is the most critical functional chemical material involved in the photolithography technology, and its main components are resin, Photo Acid Generator (PAG), and corresponding additives and solvents. The photo-acid generator is a light-sensitive compound, which is decomposed under illumination to generate acid, and the generated acid can make acid-sensitive resin generate decomposition or cross-linking reaction, so that the dissolution contrast of the illuminated part and the non-illuminated part in a developing solution is increased, and the photo-acid generator can be used in the technical field of pattern micro-machining.
Three important parameters of the photoresist include resolution, sensitivity, line width roughness, which determine the process window of the photoresist during chip fabrication. With the increasing performance of semiconductor chips, the integration level of integrated circuits is increased exponentially, and the patterns in the integrated circuits are continuously reduced. In order to make patterns with smaller dimensions, the performance indexes of the three photoresists must be improved. The use of a short wavelength light source in a photolithography process can improve the resolution of the photoresist according to the rayleigh equation. The light source wavelength for the lithographic process has evolved from 365nm (I-line) to 248nm (KrF), 193nm (ArF), 13nm (EUV). In order to improve the sensitivity of the photoresist, the current KrF, ArF and EUV photoresists are mainly made of chemically amplified photosensitive resin. Thus, photosensitizers (photoacid generators) compatible with chemically amplified photosensitive resins are widely used in high-end photoresists.
With the gradual development of the photoetching process, the process complexity is increased to 193nm immersion process, and higher requirements are put on the photo-acid generator. The development of a photoacid generator capable of improving the resolution, sensitivity and line width roughness of photoresist becomes a problem to be solved urgently in the industry.
Disclosure of Invention
The invention aims to overcome the defect that the variety of photoacid generators matched with chemically amplified photosensitive resin is less in the prior art, and provides a photoacid generator for immersion ArF photoetching and an intermediate thereof. The photoresist containing the photoacid generator has the advantages of high resolution, high sensitivity and low line width roughness.
The invention solves the technical problems through the following technical scheme.
The invention provides a compound shown as a formula I:
wherein R is1、R2、R3、R4And R5Independently of one another H, halogen, C1-6Alkyl or-O-C1-6An alkyl group;
n is 2 or 3;
a is S or I;
y is C6-14Aryl radical, quilt Y-1Substituted C6-14Aryl radical (Y)-1Is 1 or more, such as 1, 2 or 3; when Y is-1When there are plural, Y-1The same or different) or
Y-1Is hydroxy, C1-6Alkyl or-O-C1-6An alkyl group;
m is C6-14Aryl radicals, quilt M-1Substituted C6-14Aryl radical (M)-1Is 1 or more, such as 1, 2 or 3; when M is-1When there are more than one, M-1The same or different) or absent (i.e., presentIs composed of
M-1Independently is C1-6Alkyl or-O-C1-6An alkyl group.
In some embodiments, R1、R2、R3、R4And R5Wherein the halogen is F, Cl, Br or I.
In some embodiments, R1、R2、R3、R4And R5In (b), the C1-6Alkyl and said-O-C1-6C in alkyl1-6Alkyl is independently methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl or tert-butyl.
In some embodiments, in Y, said C6-14Aryl and said quilt Y-1Substituted C6-14C in aryl6-14Aryl is independently phenyl, naphthyl, phenanthryl or anthracyl, for example phenyl.
In some embodiments, Y is-1In (b), the C1-6Alkyl and said-O-C1-6C of alkyl1-6Alkyl is independently methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl or tert-butyl, for example n-butyl.
In some embodiments, Y is-1Substituted C6-14Aryl is
In some embodiments, when said Y is said C6-14Aryl or said quilt Y-1Substituted C6-14Aryl radical, said C6-14Aryl and said quilt Y-1Substituted C6-14C in aryl6-14When aryl is independently phenyl, saidIs composed of
In some embodiments, M is C6-14Aryl and quilt M-1Substituted C6-14C in aryl6-14Aryl is independently phenyl, naphthyl, phenanthryl or anthracyl, for example phenyl.
In some aspects, M-1In (b), the C1-6Alkyl and said-O-C1-6C in alkyl1-6Alkyl is independently methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl or tert-butyl, for example methyl.
In some embodiments, M is said to be M-1Substituted C6-14Aryl is
In some embodiments, R1、R2、R3、R4And R5Is H.
In some embodiments, n is 3.
In some embodiments, a is S.
In some embodiments, Y is-1Is hydroxy or-O-C1-6An alkyl group.
In some aspects, M-1Independently is C1-6An alkyl group.
In some of the embodiments described herein, the first and second,is composed of
In some embodiments, Y is
In some embodiments, R1、R2、R3、R4And R5Is H;
n is 3;
a is S;
y is C6-14Aryl radical, quilt Y-1Substituted C6-14Aryl or
Y-1Is hydroxy or-O-C1-6An alkyl group;
m is C6-14Aryl radicals, quilt M-1Substituted C6-14Aryl or absent;
M-1independently is C1-6An alkyl group.
In some embodiments, the compound of formula I is any one of the following:
the invention also provides a preparation method of the compound shown in the formula I, which comprises the following steps:
in a solvent, carrying out a salt forming reaction of a compound II and a compound III in the solvent according to the following formula to obtain the compound shown in the formula I;
wherein X is halogen; n is an alkali metal.
In X, the halogen is preferably F, Cl, Br or I, for example Cl.
In N, the alkali metal is preferably Li, Na or K, for example Na.
The salt-forming reaction may be a conventional reaction of salt-forming reaction of onium salt with sulfonic acid anion in the art, and the following conditions and operations are particularly preferred in the present invention:
in the salt forming reaction, the solvent can be an alcohol solvent and water. The alcohol solvent may be methanol, ethanol, n-propanol or isopropanol, and further may be methanol. The volume ratio of the alcohol solvent to the water is 0.8:1-1.5:1, such as 1.0: 1.
In the salt formation reaction, the molar ratio of the compound III to the compound II may be 1.5:1 to 2.5:1, for example, 2.0: 1.
In the salt-forming reaction, the compound II is preferably added in the form of an aqueous solution to a solution containing the compound II.
The salt-forming reaction can be carried out under the condition of keeping out light.
The temperature of the salt formation reaction may be 5 to 40 ℃, for example, room temperature.
The progress of the salt-forming reaction can be monitored by methods conventional in the art (e.g., TLC) with the end point of the reaction being that compound III is no longer reacted. The time for the salt-forming reaction may be 8 to 24 hours, for example 12 hours.
The work-up step of the salt-forming reaction may be a work-up step conventional in the art for such salt-forming reactions, preferably extraction. The solvent for the extraction may be a halogenated hydrocarbon solvent (e.g., chloroform). The number of extractions may be 2-3, for example 3.
The preparation method of the compound shown in the formula I can further comprise the following steps:
step 1, reacting a compound III in a solvent in the presence of an alkaline reagent and a compound IV to obtain a mixture;
step 2, in the presence of hydrogen peroxide, reacting the mixture obtained in the step 1 in water to obtain a compound II;
in step 1, the alkaline agent may be an alkaline agent conventional in the art, preferably an alkali metal carbonate and/or an alkali metal bicarbonate (e.g., sodium bicarbonate).
In step 1, the molar ratio of the basic agent to the compound III may be a molar ratio as conventional in the art, preferably 1.5:1 to 4.0:1, e.g. 3.0: 1.
In step 1, the molar ratio of said compound IV to said compound III may be a molar ratio as conventional in the art, preferably 1.5:1 to 2.5:1, e.g. 2.0: 1.
In step 1, the solvent may be a solvent conventional in such reactions in the art, preferably a nitrile solvent (e.g., acetonitrile) and water. The volume ratio of said nitrile solvent to said water is from 0.8:1 to 1.2:1, for example 1.0: 1.
In step 1, the temperature of the oxidation reaction may be 50 to 90 ℃, for example, 70 ℃.
In step 1, the oxidation reaction may be carried out for 8 to 24 hours, for example, 16 hours.
In step 2, the molar ratio of the compound hydrogen peroxide to the compound III may be a molar ratio conventional in the art, and is preferably 1.5:1 to 3.0:1, for example, 2.0: 1.
In step 2, the temperature of the oxidation reaction may be 5 to 40 ℃, for example, room temperature.
In step 2, the time of the oxidation reaction may be 8 to 24 hours, for example, 16 hours.
The preparation method of the compound shown in the formula I can further comprise the following steps: carrying out esterification reaction on the compound V and the compound VI in a solvent in the presence of p-toluenesulfonic acid to obtain a compound II;
the esterification reaction may be an esterification reaction which is conventional in the art, and the following conditions and operations are particularly preferred in the present invention:
in the esterification reaction, the molar ratio of the p-toluenesulfonic acid to the compound VI may be 0.1:1 to 0.3:1, for example 0.22: 1.
In the esterification reaction, the molar ratio of the compound VI to the compound VI may be 2.0:1 to 4.0:1, for example, 3.0: 1.
In the esterification reaction, the solvent may be an aromatic hydrocarbon solvent (e.g., toluene).
The esterification reaction temperature can be 110-130 ℃, for example, room temperature.
The progress of the salt-forming reaction can be monitored by methods conventional in the art (e.g., TLC) with the end point of the reaction being that compound IV is no longer reacted. The time for the salt-forming reaction may be 5 to 10 hours, for example 9 hours.
The work-up step of the salt-forming reaction may be a work-up step conventional in the art for such salt-forming reactions, and is preferably alkali-washed (e.g., 3 times), washed with saturated brine (e.g., 1 time), and dried (e.g., dried over anhydrous sodium sulfate).
The present invention also provides a compound II as described above:
wherein Y and N are as defined above.
The compound II is any one of the following compounds:
the invention also provides an application of the compound of the formula I as a photoacid generator in photoresist.
The invention also provides a photoresist composition, which comprises the following raw materials: the compound shown in the formula I, the resin shown in the formula (1), the alkaline additive and the solvent.
In the photoresist composition, the compound shown in the formula I is preferably 2 to 10 parts by weight, for example 4 parts by weight.
In the photoresist composition, the weight average molecular weight of the resin shown in formula (1) is 8000-9000g/mol, such as 8500 g/mol.
In the photoresist composition, the resin shown in the formula (1) is preferably 20 to 120 parts by weight, for example 100 parts by weight.
In the photoresist composition, the alkaline additive is preferably 0.1 to 1 part by weight, for example 0.5 part by weight.
In the photoresist composition, the alkaline additive is preferably C1-4Alkyl quaternary ammonium bases such as tetramethyl ammonium hydroxide.
In the photoresist composition, the solvent is preferably 500-2000 parts by weight, for example 1000 parts by weight.
In the photoresist composition, the solvent is preferably an ester solvent, such as propylene glycol methyl ether acetate.
The photoresist composition comprises the following raw materials in parts by weight: 4 parts of the compound shown in the formula I, 100 parts of resin shown in the formula (1), 0.5 part of alkaline additive and 1000 parts of solvent.
The photoresist composition is prepared from the following raw materials: the compound shown in the formula I, the resin, the alkaline additive and the solvent.
The invention also provides a preparation method of the photoresist composition, which comprises the following steps: mixing the above components uniformly.
In the preparation method, the mixing mode can be a mixing mode conventional in the field, and shaking is preferred.
In the preparation method, the mixing step preferably further comprises membrane filtration, for example, filtration with a 0.2 μm membrane.
The invention also provides an application of the photoresist composition in a photoetching process.
Wherein, the photoetching process preferably comprises the following steps: the photoresist composition is coated on a pretreated substrate, dried (e.g., at 110 ℃ for 90 seconds), exposed, and developed (e.g., using a developer solution that is an aqueous solution of tetramethylammonium hydroxide).
In the present invention, "room temperature" means 10 to 25 ℃.
The above preferred conditions can be arbitrarily combined to obtain preferred embodiments of the present invention without departing from the common general knowledge in the art.
The reagents and part of the raw materials used in the invention are available on the market, and part of the raw materials are self-made.
The positive progress effects of the invention are as follows: the photoresist prepared by the photoacid generator has the advantages of high resolution, high sensitivity and low line width roughness.
Detailed Description
The invention is further illustrated by the following examples, which are not intended to limit the scope of the invention. The experimental methods without specifying specific conditions in the following examples were selected according to the conventional methods and conditions, or according to the commercial instructions.
Preparing raw materials:
the above starting material was prepared according to the preparation method of example 1 in CN 105399602A.
The above starting material was prepared according to the preparation method of example 1 in CN 109485573A.
Preparation of the resin
In the examples of the invention or comparative examples, the resins were prepared as follows:
in a molar ratio of 1: 1:1 Tert-butyl 3-bicyclo [2.2.1] hept-5-en-2-yl-3-hydroxypropionate (hereinafter referred to as BHP), 1-methyladamantane acrylate and gamma-butyrolactone acrylate were added. 1, 4-dioxane as a polymerization solvent was added in an amount of 300 parts by weight relative to 100 parts by weight of the total amount of the reactive monomers, azobisisobutyronitrile as an initiator was added in an amount of 4 parts by mole relative to 100 parts by mole of the total amount of the reactive monomers, and the mixture was reacted at 65 ℃ for 16 hours.
After the reaction, the reaction solution was precipitated with n-hexane, and the precipitate was removed and dried in vacuo. Thus, a resin represented by the following formula (1) was obtained, which had a weight average molecular weight of about 8500 g/mol.
Example 1
Step 1: synthesis of Compound III-1
2-bromo-2, 2-difluoroethanol (24.1g, 0.15mol, 3.0eq), compound V-1(17.3g, 0.05mol, 1.0eq), p-toluenesulfonic acid (1.7g, 0.01mol, 0.2eq), and 80mL of toluene were charged in a 250mL glass bottle equipped with an oil-water separator and a condenser, and the mixture was heated under reflux for 8h with stirring. After the reaction, the reaction mixture was cooled, washed 3 times with 50mL of an aqueous sodium carbonate solution, 1 time with 50mL of a saturated saline solution, and the organic phase was dried over anhydrous sodium sulfate and concentrated to obtain 16.2g of an intermediate in total, which was 51.2%.
LC-MS：631.8.
Step 2: synthesis of Compound II-1
In a 500mL round-bottomed flask, compound II-1(16.0g, 0.025mol, 1.0eq) and 80mL acetonitrile were added and dissolved with stirring. Under nitrogen protection, 80mL of an aqueous solution containing sodium dithionite (8.8g, 0.051mol, 2.0eq) and sodium bicarbonate (6.38g, 0.076mol, 3.0eq) was added dropwise, and after completion of addition, the reaction solution was heated at 70 ℃ and stirred for 16 hours. After the reaction was complete, it was cooled and an appropriate amount of sodium chloride solid was added until the solution was saturated. The reaction solution was separated into layers, and the aqueous phase was extracted 2 times with 30mL of acetonitrile. The organic phase was combined and transferred to a 500mL round-bottomed flask, to which 100mL of purified water was added. The mixture was added dropwise to 30% hydrogen peroxide (5.7g, 0.051mol, 2.0eq) under nitrogen, and then stirred at room temperature for 16 h. After the reaction, the layers were separated, the aqueous phase was extracted 2 times with 50mL acetonitrile, the organic phases were combined and dried over anhydrous sodium sulfate, and after concentration, compound II-111.9 g was obtained with a yield of 69.3%.
1HNMR(400MHz,DMSO)：δppm:2.45,6H；4.82,4H；7.41,1H；7.75-7.91,9H.
And step 3: synthesis of Compound I-1
Synthesis of triphenyl sulfonium chloride salt
Under nitrogen protection, diphenyl sulfoxide (6.0g, 0.030mol, 1.0eq) and 60mL of anhydrous dichloromethane were charged into a 250mL three-necked flask, and trimethylchlorosilane (9.6g, 0.090mol, 3.0eq) was added dropwise at 0 ℃ or below. After the dropwise addition, the temperature was slowly raised to room temperature, and stirring was continued for 1 hour. The reaction mixture was then cooled again to 0 ℃ or lower, and at this temperature, a tetrahydrofuran solution of phenylmagnesium chloride (45ml/2M, 0.090mol, 3.0eq) was added dropwise. After the dropwise addition, the temperature is slowly raised to the room temperature, and the stirring is continued for 2 hours. The reaction was quenched with a small amount of water and 75mL of 0.2N aqueous hydrochloric acid was added. The mixed solution is washed twice by 30mL of ether, and the water phase is the aqueous solution of the triphenyl sulfonium chloride salt and is placed in a dark place for standby.
Synthesis of Compound I-1
Compound II-1(10.0g, 0.014mol, 1.0eq) and 70mL of methanol were added to a 250mL round-bottomed flask and dissolved with stirring. Then, a previously prepared aqueous solution (0.030mmol, 2.0eq) of triphenylsulfonium chloride salt was added dropwise while keeping out of the light. And after the dropwise addition, stirring for 16 hours in a dark place. After completion, the mixture was extracted 3 times with 30mL of chloroform, and the organic phases were combined and washed 2 times with 30mL of pure water. The layers were separated, the aqueous phase was removed and the organic phase was concentrated to give compound I-18.1 g, 47.4% yield.
1HNMR(400MHz,DMSO)：δppm:2.45,6H；4.82,4H；7.28-7.36,31H；7.70-8.04,9H.
Examples 2 to 6
The compounds of examples 2-6 were prepared according to example 1. The starting materials, intermediate compounds II and compounds I used are shown in tables 1 and 2, respectively.
TABLE 1
TABLE 2
EXAMPLE 7 preparation of Photoresist composition and comparative Photoresist composition
The photoresist compositions of the invention and the comparative photoresist compositions were prepared as follows:
100 parts by weight of the resin prepared as above, 0.5 parts by weight of tetramethylammonium hydroxide (as a basic additive) and 4 parts by weight of a photoacid generator as in Table 3 were dissolved in 1000 parts by weight of propylene glycol methyl ether acetate, and then the solution was filtered through a 0.2- μm membrane filter, thereby preparing a photoresist composition. The photoacid generators in the photoresist compositions of examples 1 to 6 and comparative examples 1 to 14 are shown in table 3.
TABLE 3
Photoresist composition numbering
Kind of photo-acid generator
Photoresist composition 1
Compound I-1
Photoresist composition 2
Compound I-2
Photoresist composition 3
Compound I-3
Photoresist composition 4
Compound I-4
Photoresist composition 5
Compound I-5
Photoresist composition 6
Compound I-6
Comparative example 1 Photoresist composition
Comparative Compound 1
Comparative example 2 Photoresist composition
Comparative Compound 2
Comparative example 3 Photoresist composition
Comparative Compound 3
Comparative example 4 Photoresist composition
Comparative Compound 4
Comparative example 5 Photoresist composition
Comparative Compound 5
Comparative example 6 Photoresist composition
Comparative Compound 6
Comparative example 7 resist composition
Comparative Compound 7
Comparative example 8 Photoresist composition
Comparative Compound 8
Comparative example 9 Photoresist composition
Comparative Compound 9
Comparative example 10 Photoresist composition
Comparative Compound 10
Comparative example 11 resist composition
Comparative Compound 11
Comparative example 12 Photoresist composition
Comparative Compound 12
Comparative example 13 Photoresist composition
Comparative Compound 13
Comparative example 14 Photoresist composition
Comparative Compound 14
Comparative Compound 1 bis Triphenylsulfonium salt bis (2-sulfonic acid-2, 2-difluoroethoxy) succinate
The procedure for the preparation of bis (triphenylsulfonium salt, bis (2-sulfonic acid-2, 2-difluoroethoxy) succinate is as in example 1.
1HNMR(400MHz,DMSO)：δppm:2.68,4H；4.95,4H；7.22-7.40,30H.
Comparative Compounds 2 to 14
Comparative compounds 2-9 were prepared according to step 2 and step 3 of example 1.
Comparative compounds 10-14 were prepared according to example 1.
Effect examples and comparative effect examples
The silicon wafer (12 inches) was coated with an anti-reflective coating ARC-29(Nissan Chemical Industries, Ltd.) using a spin coater, then baked at 205 ℃ for 60 seconds to form a 70nm thick organic anti-reflective coating, and then coated with the prepared photoresist composition and dried at 110 ℃ for 90 seconds to form a film having a thickness of 0.20 μm. The resulting structure was exposed to light using an immersion exposure apparatus (1700i, manufactured by ASML co.) and baked at a temperature of 105 ℃ for 60 seconds. Thereafter, the film was developed with a 2.38 wt% aqueous tetramethylammonium hydroxide solution for 40 seconds, and washed and dried. Thereby forming a photoresist pattern using ultrapure water as an immersion medium.
Will be developed at a rate of 1: the exposure amount used when a line-and-space (L/S) pattern was formed with a scribe line width of 1 of 0.10- μm was designated as the optimum exposure amount, and the optimum exposure amount was designated as the sensitivity (unit: mJ/cm 2). The minimum pattern size resolved at this time was designated as resolution (unit: nm).
Further, in the case of the Line Edge Roughness (LER), the pattern roughness in a line pitch (L/S) pattern of 0.10- μm formed after development was observed, and the LER (smaller numerical value, indicating better LER) (unit: nm) was measured.
The effects of the photoresist compositions of examples 1-6 and comparative examples 1-14 are shown in Table 4.
TABLE 4
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