阅读说明：本技术 一种数字芯片的光输入输出装置及方法 (Optical input/output device and method of digital chip ) 是由 汤宁峰 高宇琦 华锋 种海宁 于 2020-06-24 设计创作，主要内容包括：本发明实施例提供一种数字芯片的光输入输出装置及方法,包括：光电转换模块、光纤耦合阵列模块、光纤连接模块；所述光电转换模块通过所述光纤耦合阵列模块与所述光纤连接模块连接。某些实施过程中,通过在发送侧,将数字芯片的电信号通过光路的形式对外输出,以实现数字芯片的长距离输出功能；通过在接收侧,识别出其他数字芯片发送的光路中的信息,并以电信号的形式进入数字Die,从而实现数字芯片的接收功能。上述数字芯片之间的光互连方式,拓展了数字芯片之间的可互连距离。(The embodiment of the invention provides an optical input and output device and method of a digital chip, comprising the following steps: the device comprises a photoelectric conversion module, an optical fiber coupling array module and an optical fiber connection module; the photoelectric conversion module is connected with the optical fiber connection module through the optical fiber coupling array module. In some implementation processes, the electric signal of the digital chip is externally output in the form of an optical path at the transmitting side, so that the long-distance output function of the digital chip is realized; the receiving side recognizes the information in the optical path sent by other digital chips and enters the digital Die in the form of an electric signal, so that the receiving function of the digital chip is realized. The optical interconnection mode among the digital chips expands the interconnectable distance among the digital chips.)

1. An optical Input Output (IO) device of a digital chip, comprising: the device comprises a photoelectric conversion module, an optical fiber coupling array module and an optical fiber connection module; the photoelectric conversion module is connected with the optical fiber connection module through the optical fiber coupling array module;

the photoelectric conversion module comprises a first cell chip unit, a first optical chip unit and a switching unit;

the switching unit is used for transmitting a first output electric signal of a digital Die in the digital chip to the first cell slice unit;

the first optical chip unit is used for obtaining a first output electric signal according to the type of a modulator in the first optical chip unit;

the first optical chip unit is used for obtaining an output optical signal after modulation processing is carried out according to the second output electric signal and transmitting the output optical signal to the optical fiber connection module through the optical fiber coupling array module;

the photoelectric conversion module also comprises a second cell chip unit and a second optical chip unit;

the second optical chip unit is configured to receive an input optical signal of a second digital chip transmitted by the optical fiber connector module through the coupling array module, perform optical detection processing on the input optical signal to obtain a first input electrical signal, and send the first input electrical signal to the second optical chip unit;

the second cell slice unit is used for amplifying the first input electric signal to obtain a second input electric signal and sending the second input electric signal to the digital Die.

2. The digital on-chip optical IO device of claim 1, wherein the type of modulator comprises a silicon optical micro-ring resonator type modulator MRM, a mach-zehnder modulator MZM.

3. The digital-chip optical IO device of claim 2, wherein when the modulator is of the MRM type, the first optical chip unit, the second optical chip unit and the switching unit are integrated;

the first electric chip is fixed on the first optical chip unit and the switching unit through ball grid array BGA;

the second electric chip is fixed on the second optical chip unit and the switching unit through BGA.

4. The digital-chip optical IO device of claim 2, wherein when the modulator is of MZM type, the first die unit, the second die unit, the first optical die unit, and the second optical die unit are all fixed to the adaptor unit through BGA.

5. The digital on-chip optical IO device of claim 1, wherein the output optical signal and the input optical signal comprise optical signals of two wavelengths.

6. The optical IO device of the digital chip according to claim 5, wherein the second optical chip unit is further configured to separate two optical signals with different wavelengths from the input optical signal by two micro-rings after receiving the input optical signal of the second digital chip; two resonance wavelengths corresponding to the two micro-rings are respectively consistent with two wavelengths in the input optical signal.

7. An optical IO method of a digital chip, comprising:

when light is output;

receiving a first output electric signal of a digital Die in the digital chip through a switching unit;

performing parameter processing on the first output electric signal through a first optical chip unit according to the type of a modulator in the first optical chip unit to obtain a second output electric signal, and sending the second output electric signal to the first optical chip unit;

modulating the second output electrical signal through the first optical chip unit to obtain an output optical signal, and transmitting the output optical signal to an optical connector through the optical fiber;

a light input;

receiving an input optical signal of a second digital chip transmitted by the optical fiber through the optical connector through a second optical chip unit, performing optical detection processing on the input optical signal to obtain a first input electrical signal, and sending the first input electrical signal to the second optical chip unit;

and amplifying the input electric signal through the second cell slice unit to obtain a second input electric signal, and sending the second input electric signal to the digital Die.

8. The optical IO method of a digital chip according to claim 7, comprising:

the type of the modulator comprises a silicon optical micro-ring resonance type modulator MRM and a Mach-Zehnder modulator MZM.

9. The optical IO method of the digital chip according to claim 8, wherein when the type of the modulator is the MRM, the sending the second output signal to the first optical chip unit includes:

the second output signal is sent directly to the MRM through the BGA.

10. The optical IO method of a digital chip according to claim 8, comprising:

when the type of the modulator is the MZM, the sending the second output signal to the first optical chip unit includes:

sending the second output signal to the MZM through the switching unit.

Technical Field

The embodiment of the invention relates to the field of optical communication of a digital chip, in particular to an optical input/output device and an optical input/output method of the digital chip.

Background

In the related art, the problem of limited transmission distance exists in the electrical interconnection mode between digital chips, and a solution for expanding the interconnectable distance between digital chips is needed urgently.

Disclosure of Invention

The embodiment of the invention provides an optical input/output (IO) device and method of a digital chip, which mainly solve the technical problems that: the electrical interconnection between the digital chips in the related art has a problem in that a transmission distance is limited.

To solve the foregoing technical problem, an embodiment of the present invention provides an optical input/output IO device of a digital chip, including: the device comprises a photoelectric conversion module, an optical fiber coupling array module and an optical fiber connection module; the photoelectric conversion module is connected with the optical fiber connection module through the optical fiber coupling array module;

the photoelectric conversion module comprises a first cell chip unit, a first optical chip unit and a switching unit;

the switching unit is used for transmitting a first output electric signal of a digital Die in the digital chip to the first cell slice unit;

the first optical chip unit is used for obtaining a first output electric signal according to the type of a modulator in the first optical chip unit;

the first optical chip unit is used for obtaining an output optical signal after modulation processing is carried out according to the second output electric signal and transmitting the output optical signal to the optical fiber connection module through the optical fiber coupling array module;

the photoelectric conversion module also comprises a second cell chip unit and a second optical chip unit;

the second optical chip unit is configured to receive an input optical signal of a second digital chip transmitted by the optical fiber connector module through the coupling array module, perform optical detection processing on the input optical signal to obtain a first input electrical signal, and send the first input electrical signal to the second optical chip unit;

the second cell slice unit is used for amplifying the first input electric signal to obtain a second input electric signal and sending the second input electric signal to the digital Die.

The embodiment of the invention also provides an optical IO method of the digital chip, which comprises the following steps:

when light is output;

receiving a first output electric signal of a digital Die in the digital chip through a switching unit;

performing parameter processing on the first output electric signal through a first optical chip unit according to the type of a modulator in the first optical chip unit to obtain a second output electric signal, and sending the second output signal to the first optical chip unit;

modulating the second output signal through the first optical chip unit to obtain an output optical signal, and transmitting the output optical signal to an optical connector through the optical fiber;

a light input;

receiving an input optical signal of a second digital chip transmitted by the optical fiber through the optical connector through a second optical chip unit, performing optical detection processing on the input optical signal to obtain a first input electrical signal, and sending the first input electrical signal to the second optical chip unit;

and amplifying the input electric signal through the second cell slice unit to obtain a second input electric signal, and sending the second input electric signal to the digital Die.

According to the optical IO device and the method of the digital chip provided by the embodiment of the invention, a first output electric signal of a digital Die in the digital chip is received through a switching unit; performing parameter processing on the first output electric signal through a first optical chip unit according to the type of a modulator in the first optical chip unit to obtain a second output electric signal, and sending the second output signal to the first optical chip unit; and modulating the second output signal through the first optical chip unit to obtain an output optical signal, and transmitting the output optical signal to an optical connector through the optical fiber. Receiving an input optical signal of a second digital chip transmitted by the optical fiber through the optical connector through a second optical chip unit, performing optical detection processing on the input optical signal to obtain a first input electrical signal, and sending the first input electrical signal to the second optical chip unit; and amplifying the input electric signal through the second cell slice unit to obtain a second input electric signal, and sending the second input electric signal to the digital Die. In some implementation processes, the electric signal of the digital chip is output outwards through the form of an optical path at the transmitting side, so that the long-distance output function of the digital chip is realized; the receiving side recognizes the information in the optical path sent by other digital chips and enters the digital Die in the form of an electric signal, so that the receiving function of the digital chip is realized. The optical interconnection mode among the digital chips expands the interconnectable distance among the digital chips.

Additional features and corresponding advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.

Drawings

FIG. 1 is a schematic diagram of an electrical interconnection arrangement for a digital chip in the related art;

fig. 2 is a schematic diagram of an optical IO device of a digital chip according to a first embodiment of the present invention;

fig. 3 is a schematic diagram of a photoelectric conversion module in a digital chip according to a first embodiment of the invention;

FIG. 4 is a flowchart of an optical IO method of a digital chip according to a second embodiment of the present invention;

FIG. 5 is a side view of an optical IO device of a digital chip according to a third embodiment of the present disclosure;

fig. 6 is a schematic diagram of an MRM modulation principle according to a third embodiment of the present invention;

FIG. 7 is a schematic diagram of an external light source according to a third embodiment of the present invention;

FIG. 8 is a schematic diagram illustrating a principle of detecting a micro-ring of a dual-wavelength optical signal according to a third embodiment of the present invention;

FIG. 9 is a top view of an optical IO device of a digital chip according to a third embodiment of the present invention;

FIG. 10 is a schematic diagram of an optical IO device of a digital chip according to a fourth embodiment of the present invention;

FIG. 11 is a schematic diagram of an MZM modulation principle according to a fourth embodiment of the present invention;

FIG. 12 is a top view of an optical IO device of a digital chip according to a fourth embodiment of the present invention;

fig. 13 is a schematic diagram of an optical-electrical hybrid interconnection of an optical IO device of a digital chip on a line card according to a fifth embodiment of the present invention;

FIG. 14 is a top view of a single light engine Co-Packaged large-scale digital chip high-speed high-density optical interconnect package enclosure according to a fifth embodiment of the present invention;

fig. 15 is a schematic diagram of optical interconnection of an optical IO device of a digital chip on a line card according to a fifth embodiment of the present invention;

FIG. 16 is a top view of an 8 photo-engine Co-Packaged digital chip high-speed high-density optical interconnect package according to a fifth embodiment of the present invention;

fig. 17 is an assembly diagram of an 8 optical engine system optical fiber connector according to a fifth embodiment of the present invention.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention are described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.

Referring to fig. 1, in the related art, an electrical interconnection apparatus of a digital chip includes the following modules: the digital Die module, the digital Die substrate module and the high-speed electric connector module. In the following, the application scenario of the electrical interconnection of the existing digital chip on the line card is taken as an example for further explanation:

the digital Die module is arranged on the digital Die substrate module and is connected with a Printed Circuit Board (PCB) on the line card through the digital Die substrate module. For a digital chip, the digital function of the chip is completed by a digital Die module, which has a high-density high-speed electrical interface IO and exchanges data with other devices through the high-density high-speed IO. The digital Die substrate module is generally made of organic materials, and can transmit signals on the digital Die to a line card, and also can provide power supply, clock signals and the like for the digital Die module. The high-density and high-speed IO of the digital Die can also be interconnected through the digital Die substrate module and other digital chips.

The output process of the high-speed output signal in the digital Die module is as follows: the high-speed output signal in the digital Die module is transmitted to the digital Die substrate module through a Ball Grid Array (BGA), then the high-speed output signal is transmitted to a PCB on a line card by the digital Die substrate module, and the high-speed output signal is transmitted to the high-speed electric connector module through a copper wire on the PCB, and the high-speed electric connector module is connected with the high-speed electric connectors in other digital chips, so that the high-speed output signal of one digital chip is transmitted to other digital chips.

The electrical interconnection method adopted among the digital chips has the problem that the transmission distance is limited. In view of the above, the present application provides an optical interconnection apparatus and method for digital chips, which extends the interconnectable distance between large-scale digital chips. The following detailed description will be made with reference to the accompanying drawings for describing the digital chip optical IO device and method of the present invention.

The first embodiment is as follows:

in order to solve the problem of limited transmission distance of electrical interconnection between digital chips in the related art, the present invention provides an optical IO device of a digital chip, as shown in fig. 2 to 3, the device includes the following modules: the device comprises a photoelectric conversion module, an optical fiber coupling array module and an optical fiber connection module; the photoelectric conversion module is connected with the optical fiber connection module through the optical fiber coupling array module;

the photoelectric conversion module comprises a first cell chip unit, a first optical chip unit and a switching unit;

the switching unit is used for transmitting a first output electric signal of a digital Die in the digital chip to the first cell slice unit;

the first optical chip unit is used for obtaining a first output electric signal according to the type of a modulator in the first optical chip unit;

the first optical chip unit is used for obtaining an output optical signal after modulation processing is carried out according to the second output electric signal and transmitting the output optical signal to the optical fiber connection module through the optical fiber coupling array module;

the photoelectric conversion module also comprises a second cell chip unit and a second optical chip unit;

the second optical chip unit is configured to receive an input optical signal of a second digital chip transmitted by the optical fiber connector module through the coupling array module, perform optical detection processing on the input optical signal to obtain a first input electrical signal, and send the first input electrical signal to the second optical chip unit;

the second cell slice unit is used for amplifying the first input electric signal to obtain a second input electric signal and sending the second input electric signal to the digital Die.

By the device, the beneficial effects that can be realized are as follows: at the sending side, the electric signal of the digital chip is output outwards in the form of an optical path so as to realize the long-distance output function of the digital chip; the receiving side recognizes the information in the optical path sent by other digital chips and enters the digital Die in the form of an electric signal, so that the receiving function of the digital chip is realized. The optical interconnection mode among the digital chips expands the interconnectable distance among the digital chips.

In some inventive embodiments, the type of modulator comprises a silicon optical micro-ring resonance type modulator MRM, a mach-zehnder modulator MZM.

It should be noted that different modulation schemes can be selected according to different requirements. MRM has the following advantages over MZM: 1) the size is small: compared with the length of MZM Merlot 2-3mm, the size is very small, and the diameter of the micro-ring can be 6-10 um; 2) and (3) well driving: compared to the 50-ohm equivalent impedance of the MZM, the MRM is only one capacitive load equivalent in size to a PAD (PAD).

In some embodiments, when the type of the modulator is MRM, the first optical chip unit, the second optical chip unit and the switching unit are integrated;

the first electric chip is fixed on the first optical chip unit and the switching unit through ball grid array BGA;

the second electric chip is fixed on the second optical chip unit and the switching unit through BGA.

It should be noted that, for the implementation of the above photoelectric conversion module, an integrated manner in which a through silicon via interposer (TSI) and a Photonic Integrated Circuit (PIC) are integrated is adopted, that is, the first optical chip (the optical chip on the transmitting side), the second optical chip (the optical chip on the receiving side), and the interposer unit (interposer) are integrated on the same silicon chip. In this case, the MRM with a smaller area is selected, and the advantage of high integration of TSI and PIC is taken advantage of.

In some invention embodiments, when the type of the modulator is MZM, the first cell chip unit, the second cell chip unit, the first optical chip unit, and the second optical chip unit are all fixed to the adaptor unit through BGA.

It should be noted that, for the implementation of the photoelectric conversion module, a TSI and PIC are separated. This approach accommodates situations with low requirements on integration and high requirements on speed and temperature stability. In addition, the process difficulty is low, and the price is low.

In some inventive embodiments, the output optical signal and the input optical signal comprise optical signals of two wavelengths. It is understood that the output optical signal, the input optical signal includes, but is not limited to, a single wavelength optical signal, a dual wavelength optical signal.

In some embodiments of the present invention, the second optical chip unit is further configured to separate two optical signals with different wavelengths in the input optical signal through two micro-rings after receiving the input optical signal of the second digital chip; two resonance wavelengths corresponding to the two micro-rings are respectively consistent with two wavelengths in the input optical signal.

By the optical IO device of the digital chip provided by the embodiment, the following beneficial effects including but not limited to can be achieved: at the sending side, the electric signal of the digital chip is output outwards in the form of an optical path so as to realize the long-distance output function of the digital chip; the receiving side recognizes the information in the optical path sent by other digital chips and enters the digital Die in the form of an electric signal, so that the receiving function of the digital chip is realized. The optical interconnection mode among the digital chips expands the interconnectable distance among the digital chips.

Example two:

in order to solve the problem of the transmission distance limitation existing in the electrical interconnection between the digital chips in the related art, the present invention provides an optical IO method for a digital chip, as shown in fig. 4, the method includes the following steps:

s201: when light is output;

s202: receiving a first output electric signal of a digital Die in the digital chip through a switching unit;

s203: performing parameter processing on the first output electric signal through a first optical chip unit according to the type of a modulator in the first optical chip unit to obtain a second output electric signal, and sending the second output signal to the first optical chip unit;

s204: modulating the second output signal through the first optical chip unit to obtain an output optical signal, and transmitting the output optical signal to an optical connector through the optical fiber;

through the steps, the electric signals of the digital chips are output outwards through the form of the optical path at the transmitting side, so that the long-distance output function of the digital chips is realized, and the interconnectable distance between the digital chips is expanded.

S301: a light input;

s302: receiving an input optical signal of a second digital chip transmitted by the optical fiber through the optical connector through a second optical chip unit, performing optical detection processing on the input optical signal to obtain a first input electrical signal, and sending the first input electrical signal to the second optical chip unit;

s303: and amplifying the input electric signal through the second cell slice unit to obtain a second input electric signal, and sending the second input electric signal to the digital Die.

Through the steps, information in optical paths sent by other digital chips is identified on the receiving side, and the information enters the digital Die in the form of electric signals, so that the receiving function of the digital chip is realized.

In some embodiments, the type of modulator comprises a silicon optical micro-ring resonance type modulator MRM, a mach-zehnder modulator MZM.

It should be noted that different modulation schemes can be selected according to different requirements. MRM has the following advantages over MZM: 1) the size is small: compared with the length of MZM Merlot 2-3mm, the size is very small, and the diameter of the micro-ring can be 6-10 um; 2) and (3) well driving: compared to the 50-ohm equivalent impedance of the MZM, the MRM is only one capacitive load equivalent in size to a PAD (PAD).

In some embodiments, when the type of the modulator is the MRM, the sending the second output signal to the first optical chip unit comprises:

the second output signal is sent directly to the MRM through the BGA.

It should be noted that, at this time, an integration mode that a capacitive touch sensing module (TSI) and a Photonic Integrated Circuit (PIC) are integrated is adopted, that is, the first optical chip (optical chip on the transmitting side), the second optical chip (optical chip on the receiving side), and the switch unit (interposer) are integrated on the same silicon chip. The second output signal may be sent directly through the BGA to a PAD (PAD) of the MRM.

In some embodiments, when the type of the modulator is the MZM, the sending the second output signal to the first optical chip unit includes:

sending the second output signal to the MZM through the switching unit.

It should be noted that, in this case, the TSI and the PIC are separated. This approach accommodates situations with low requirements on integration and high requirements on speed and temperature stability. In addition, the process difficulty is low, and the price is low. The second output signal is sent to the PAD of the MZM through the silicon interposer and the BGA.

By the optical IO method of the digital chip provided by the embodiment, the following beneficial effects including but not limited to can be achieved: at the sending side, the electric signal of the digital chip is output outwards in the form of an optical path so as to realize the long-distance output function of the digital chip; the receiving side recognizes the information in the optical path sent by other digital chips and enters the digital Die in the form of an electric signal, so that the receiving function of the digital chip is realized. The optical interconnection mode among the digital chips expands the interconnectable distance among the digital chips.

Example three:

in order to facilitate understanding of the optical IO apparatus and method of the digital chip provided in the embodiments of the present invention, the following is further described with reference to an application scenario of optical interconnection of a digital chip on a line card:

as shown in fig. 5, the apparatus in the embodiment of the present invention includes a digital Die module and a digital Die substrate module in the related art, and further includes a photoelectric conversion module, an optical fiber coupling array module, and an optical fiber connection module.

The photoelectric conversion module may also be referred to as a light engine. From a functional point of view, the components of the light engine can be divided into: electrical chips, optical chips, and interposers or silicon interposers (interposers). Wherein, the electric chip comprises an electric chip with a receiving function (electric chip at the receiving side) and an electric chip with a transmitting function (electric chip at the transmitting side); the optical chip includes an optical chip having a receiving function (optical chip on the receiving side) and an optical chip having a transmitting function (optical chip on the transmitting side).

The optical engine can adopt different implementation modes, and can be selected specifically according to requirements of cost, optical IO density, power consumption, speed, modulation mode and the like.

In this embodiment, the light engine adopts an integrated mode of integrating TSI and PIC. As shown in fig. 4, the connection relationship between the components in the light engine is:

the input PAD of the electric chip at the sending side is welded on the TSV of the interposer and carries out information transmission with the digital Die, so that the minimization of silicon is realized;

the output PAD of the electric chip at the sending side is directly welded on the input PAD of the MRM through the BGA;

an input PAD of the electric chip on the receiving side is directly welded on a PAD of a reverse bias signal of the PD through the BGA;

and the output PAD of the electric chip on the receiving side is directly welded to the TSV of the interposer through the BGA.

And combining the characteristic of high integration level of TSI and PIC, and selecting the MRM with smaller area on the silicon substrate. The smaller the diameter of the microring, the larger the optical bandwidth and the resulting maximum loss. To balance the relationship between diameter, optical bandwidth, loss, etc., the diameter of the microring in the embodiments of the present invention is 6-10 μm.

The optical fiber coupling array module is used for connecting optical fibers and optical chips and realizing input and output of optical paths.

And the optical fiber connection module is used for transmitting the optical signals input by other digital chips and the optical signals input by the external light source to the optical chip and transmitting the modulated optical signals to other digital chips.

The output and receiving functions implemented by the apparatus are further described below:

(1) the output function is realized as follows:

1) the interposer receives the high-speed SerDes signal from the digital Die and sends the high-speed SerDes signal to the electric chip at the sending side;

2) and the electric chip at the transmitting side receives the high-speed SerDes signal, performs nonlinear preprocessing and voltage and current adjustment on the high-speed SerDes signal according to the electrical property of the MRM structure, and transmits the adjusted high-speed SerDes signal to the PAD of the MRM through the BGA.

3) By applying the adjusted high-speed SerDes signal to the MRM structure, the light on the waveguide in the optical chip on the transmitting side at this time contains information on SerDes output from the digital Die, and modulation of the digital Die signal is completed.

4) The optical chip at the transmitting side couples the modulated optical signal through the optical fiber and outputs the optical signal to the optical fiber bundle, and finally the optical signal reaches the digital chip needing interconnection.

The MRM modulation principle is further explained in conjunction with fig. 6:

in the embodiment of the present invention, an external light source with dual wavelengths is used, and input photoelectric polarization control is implemented by a Polarization Controller (PC), as shown in fig. 7.

The light of the external light source sequentially passes through the optical fiber connection module and the optical fiber coupling module to enter the optical chip at the transmitting side, and the optical chip at the transmitting side is divided into 4 paths of light sources by the optical splitter. The 4 light sources enter a functional area of the optical chip on the transmitting side along the waveguide, the functional area comprises 8 micro-rings, and the diameters of the micro-rings are divided into two lengths which respectively correspond to two wavelengths in the light sources. Each waveguide passes through 2 microrings, and when the microrings resonate with light in the waveguide, the light in the waveguide is cut off, so that the modulation function is realized. Thus, the light in the waveguide, after passing through the microring, contains the information of the high-speed output SerDes in the digital Die.

Optionally, in order to solve the problems of resonance and temperature sensitivity of the micro-ring, an automatic wavelength adjusting unit may be added to the electric chip on the transmitting side. For example, 5-10% of power is separated from the modulated light passing by the microring in the waveguide, and the modulated light bypasses a voltage transformer (PT), a preset bias current signal is input into the light engine, the average light intensity is tested, if the average photoelectric intensity is larger than a preset threshold value, the heating resistor is started, and then, when the average light intensity is lower than the preset threshold value, the heating resistor is stopped. The predetermined threshold may be determined by a heating algorithm and ensures that the wavelength is stable.

(2) The implementation process of the receiving function is as follows:

1) the optical chip on the receiving side receives optical signals input by other digital chips through the optical fiber connecting module and the optical fiber coupling module, and the optical signals are dual-wavelength optical signals. The principle of detecting the micro-ring of the dual-wavelength optical signal adopted by the embodiment of the present invention is further explained with reference to fig. 8:

two micro-rings are arranged beside the waveguide loaded with the dual-wavelength optical signal, the two micro-rings correspond to two different resonant wavelengths, and the two resonant wavelengths are consistent with the two wavelengths in the dual-wavelength optical signal. Light at the resonant wavelength in the waveguide loaded with the dual-wavelength optical signal is coupled into the corresponding micro-ring when passing through the corresponding micro-ring. Similarly, light of this wavelength coupled into the microring will also be coupled into the waveguide on the other side of the microring. Thus, two wavelengths in the input optical signal are respectively transmitted into two waveguides by two microrings.

2) Detecting an electrical signal from the waveguide by a Photodiode (PD) in the optical chip on the receiving side and transmitting the electrical signal to the electrical chip on the receiving side through the BGA;

3) the electric chip on the receiving side processes the electric signal through a trans-impedance amplifier (TIA), changes the current into a voltage signal, and converts the voltage signal into a high-speed SerDes signal which can be identified by digital Die through multi-stage amplification.

4) The electric chip on the receiving side connects the electric signal processed by TIA to the digital Die base plate through interposer and BGA, then connects to the BGA of the digital Die through the copper wire on the digital Die base plate, and finally enters the input port of the high-speed SerDes of the digital Die.

In order to meet the requirement of high integration, as shown in fig. 9, in the embodiment of the present invention, multiple sets of transceiver chips are disposed in one photoelectric conversion module, and each set supports multiple inputs and outputs. In addition, a certain distance is required to be kept between the electric chips.

By the optical IO device and the method of the digital chip provided by the embodiment, the following beneficial effects including but not limited to can be achieved: on one hand, on the transmitting side, the electric signal of the digital chip is output outwards in the form of an optical path so as to realize the long-distance output function of the digital chip; the receiving side recognizes the information in the optical path sent by other digital chips and enters the digital Die in the form of an electric signal, so that the receiving function of the digital chip is realized. The optical interconnection mode among the digital chips expands the interconnectable distance among the digital chips. On the other hand, the photoelectric conversion module adopts an integrated mode of integrating TSI and PIC to realize high integration level; the photoelectric conversion module also comprises a plurality of sets of transceiving chips, so that the capacity of the system is greatly expanded.

Example four:

in order to facilitate understanding of the optical IO apparatus and method of the digital chip provided in the embodiments of the present invention, the following is further described with reference to an application scenario of optical interconnection of a digital chip on a line card:

the difference between the fourth embodiment of the present invention and the third embodiment of the present invention is only the photoelectric conversion module, and other modules are the same, and the structures of other modules are not described again.

In the fourth embodiment of the present invention, the photoelectric conversion module (i.e., the optical engine) adopts a mode in which the TSI and the PIC are separated, and this mode is suitable for the situations of low requirement on the integration level and high requirement on the speed and temperature stability. In addition, the process difficulty is low, and the price is low.

As shown in fig. 10, the connection relationship between the components in the light engine is:

the input PAD of the electric chip at the sending side is directly welded on the TSV of the silicon medium layer through the BGA;

the output PAD of the electric chip on the sending side is directly welded on the silicon intermediate layer through the BGA;

the input PAD and the output PAD of the optical chip are directly welded on the silicon intermediate layer through the BGA;

the input PAD of the electric chip at the receiving side is directly welded on the silicon intermediate layer through the BGA;

and the output PAD of the electric chip on the receiving side is directly welded on the TSV of the silicon intermediate layer through the BGA.

With the above structure, the electrical chip on the transmitting side and the electrical chip on the transmitting side need to be connected through the BGA and the silicon interposer; the receiving-side electrical chip and the receiving-side electrical chip are also connected through BGA and silicon interposers.

The output and receiving functions implemented by the apparatus are further described below:

(1) the output function is realized as follows:

1) the interposer receives the high-speed SerDes signal from the digital Die and sends the high-speed SerDes signal to the electric chip at the sending side;

2) and the electric chip on the transmitting side receives the high-speed SerDes signal, performs nonlinear preprocessing and voltage and current adjustment on the high-speed SerDes signal according to the electrical property of the MZM structure, and transmits the adjusted high-speed SerDes signal to the PAD of the MZM through the silicon interposer and the BGA.

3) By applying the adjusted high-speed SerDes signal to the MRM structure, the light on the waveguide in the optical chip on the transmitting side at this time contains information on SerDes output from the digital Die, and modulation of the digital Die signal is completed.

4) The optical chip at the transmitting side couples the modulated optical signal through the optical fiber and outputs the optical signal to the optical fiber bundle, and finally the optical signal reaches the digital chip needing interconnection.

The MZM modulation principle is further explained with reference to fig. 11:

in the embodiment of the invention, an external light source with single wavelength is adopted, and polarization control is realized through a PC (personal computer), which is shown in figure 7.

The light of the external light source sequentially passes through the optical fiber connection module and the optical fiber coupling module to enter the optical chip at the transmitting side, and the optical chip at the transmitting side is divided into not only 8 light sources by the optical splitter. The 8 paths of light sources respectively enter 8 MZMs in the optical chip at the transmitting side along the waveguide; loading the adjusted high-speed SerDes signal and the adjusted light source signal to two arms in each MZM respectively; since the high-speed SerDes signal has a phase difference with the light source signal, the high-speed SerDes signal will have a certain influence on the light source signal in the waveguide, and after the high-speed SerDes signal is applied to the MZM structure, the light on the waveguide contains the information of the high-speed output SerDes in the digital Die.

(2) The implementation process of the receiving function is as follows:

1) the optical chip at the receiving side receives optical signals input by other digital chips through the optical fiber connecting module and the optical fiber coupling module, and the optical signals are single-wavelength optical signals.

2) Detecting an electrical signal from the waveguide by a Photodiode (PD) in the optical chip on the receiving side, and transmitting the electrical signal to the electrical chip on the receiving side through a silicon interposer and a BGA;

3) the electric chip on the receiving side processes the electric signal through a trans-impedance amplifier (TIA), changes the current into a voltage signal, and converts the voltage signal into a high-speed SerDes signal which can be identified by digital Die through multi-stage amplification.

4) The electric chip on the receiving side connects the electric signal processed by TIA to the digital Die base plate through interposer and BGA, then connects to the BGA of the digital Die through the copper wire on the digital Die base plate, and finally enters the input port of the high-speed SerDes of the digital Die.

As shown in fig. 12, in the embodiment of the present invention, a plurality of sets of transceiver chips are disposed in one photoelectric conversion module, and each set supports multiple inputs and outputs.

By the optical IO device and the method of the digital chip provided by the embodiment, the following beneficial effects including but not limited to can be achieved: on one hand, on the transmitting side, the electric signal of the digital chip is output outwards in the form of an optical path so as to realize the long-distance output function of the digital chip; the receiving side recognizes the information in the optical path sent by other digital chips and enters the digital Die in the form of an electric signal, so that the receiving function of the digital chip is realized. The optical interconnection mode among the digital chips expands the interconnectable distance among the digital chips. On the other hand, the photoelectric conversion module adopts a mode that TSI and PIC are separated so as to meet high requirements on speed and temperature stability; the photoelectric conversion module also comprises a plurality of sets of transceiving chips, so that the capacity of the system is greatly expanded.

Example five:

the embodiment of the invention provides an application scene of photoelectric hybrid interconnection of an optical IO device of a digital chip on a line card, which mainly aims at the application of a single engine, and the condition of optical interconnection of partial IO in the digital chip is adopted; as shown in fig. 13:

the digital Die module mainly realizes the function of processing data and is provided with high-density and high-speed IO; in consideration of cost and application scenarios, a part of high-speed IO interfaces in the digital Die module may be configured as input and output of the optical path, and other high-speed IO interfaces still use an electrical interconnection manner. When optical interconnection is carried out, the optical engine is placed on a substrate of the digital Die, and interconnection is realized with the outside through an optical fiber; when the electric interconnection is carried out, other high-speed IO interfaces are still connected with the PCB through the substrate and then connected with the high-speed electric connector through the copper wire, so that the photoelectric hybrid IO mode is realized. For the application scene of the photoelectric hybrid interconnection, a single light engine can be adopted, and two or more light engines can also be adopted.

For the whole chip package, the digital Die and the optical engine use a complete heat sink, and the optical fiber is connected out through the side of the chip. FIG. 14 is a top view of a single-light-engine Co-Packaged (Co-Packaged) large digital chip high-speed high-density optical interconnect package housing.

The embodiment of the invention also provides an application scene of optical interconnection of the optical IO device of the digital chip on the line card, which mainly aims at the situation that all the IOs in the digital chip adopt optical interconnection in the application of multiple engines; as shown in fig. 15:

for the packaging of the whole digital chip, the optical fiber position is arranged at the top edge of the Co-Packaged, namely the front side of the chip, and the packaging shell is a heat dissipation packaging shell provided with a fiber outlet position. The contact surface of the shell, the digital Die module and the light engine adopts a 3D contact mode, namely, the interior of the shell is not a plane structure, but a three-dimensional structure arranged according to the height difference of the digital Die module and the light engine. FIG. 16 is a top view of an 8 light engine Co-Packaged digital chip high speed high density optical interconnect package housing.

In view of the manufacturing of the whole digital chip and the convenience of interconnection between the digital chips, for the output connector of the optical fiber, the same sub-connectors are configured for each optical engine, and then the sub-connectors are combined to become an external connection interface of a complete digital chip, and fig. 17 is an assembly schematic diagram of an 8 optical engine system optical fiber connector.

It will be apparent to those skilled in the art that all or some of the steps of the methods, systems, functional modules/units in the devices disclosed above may be implemented as software (which may be implemented in computer program code executable by a computing device), firmware, hardware, and suitable combinations thereof. In a hardware implementation, the division between functional modules/units mentioned in the above description does not necessarily correspond to the division of physical components; for example, one physical component may have multiple functions, or one function or step may be performed by several physical components in cooperation. Some or all of the physical components may be implemented as software executed by a processor, such as a central processing unit, digital signal processor, or microprocessor, or as hardware, or as an integrated circuit, such as an application specific integrated circuit.

In addition, communication media typically embodies computer readable instructions, data structures, computer program modules or other data in a modulated data signal such as a carrier wave or other transport mechanism and includes any information delivery media as known to one of ordinary skill in the art. Thus, the present invention is not limited to any specific combination of hardware and software.

The foregoing is a more detailed description of embodiments of the present invention, and the present invention is not to be considered limited to such descriptions. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.