阅读说明：本技术 半模加脊方同轴基片集成波导互连装置 (Half-mode and ridge-added coaxial substrate integrated waveguide interconnection device ) 是由 李晓春 宁肯 毛军发 于 2021-09-27 设计创作，主要内容包括：本发明提供了一种半模加脊方同轴基片集成波导互连装置,包括自上而下依次设置的金属层L1,介质层L2,金属层L3,介质层L4和金属层L5；在金属层L1与金属层L5之间设置有金属化通孔阵列,所述金属层L3包含一非接地金属和一接地金属,所述接地金属为所述半模加脊方同轴基片集成波导互连装置的脊,所述接地金属被金属化通孔贯穿；所述金属层L3的非接地金属构成内导体；所述金属层L1、金属层L3的接地金属、金属层L5、金属化通孔阵列构成外导体；介质层L2与介质层L4采用介电常数不同的两种介质。本发明使用了两个介电常数,并作为设计参数,使得设计自由度有显著的提升,更能适应复杂的复合介质环境的互连需求。(The invention provides a half-mode and ridge-added coaxial substrate integrated waveguide interconnection device which comprises a metal layer L1, a dielectric layer L2, a metal layer L3, a dielectric layer L4 and a metal layer L5 which are sequentially arranged from top to bottom; an array of metallized vias is disposed between metal layer L1 and metal layer L5, the metal layer L3 comprising a non-grounded metal and a grounded metal, the grounded metal being a ridge of the half-mold and ridge-side coaxial substrate integrated waveguide interconnect device, the grounded metal being penetrated by the metallized vias; the non-grounded metal of the metal layer L3 constitutes an inner conductor; the metal layer L1, the grounding metal of the metal layer L3, the metal layer L5 and the metalized through hole array form an outer conductor; the dielectric layer L2 and the dielectric layer L4 use two dielectrics having different dielectric constants. The invention uses two dielectric constants as design parameters, so that the design freedom degree is obviously improved, and the invention can be more suitable for the interconnection requirement of a complex composite medium environment.)

1. A half-mode and ridge-added coaxial substrate integrated waveguide interconnection device is characterized by comprising five physical structures which are sequentially arranged from top to bottom, wherein the first layer is a metal layer L1, the second layer is a dielectric layer L2, the third layer is a metal layer L3, the fourth layer is a dielectric layer L4, and the fifth layer is a metal layer L5;

a metalized through hole array is arranged between the metal layer L1 and the metal layer L5, penetrates through the first layer to the fifth layer, and is formed by metalized through holes which are arranged in a row along the length direction of the half-die and ridge-side coaxial substrate integrated waveguide interconnection device;

the metal layer L3 comprises a non-grounded metal and a grounded metal, the grounded metal is a ridge of the half-mold and ridge-side coaxial substrate integrated waveguide interconnection apparatus, and the grounded metal is penetrated by a metallized through hole;

the non-grounded metal of the metal layer L3 constitutes an inner conductor;

the metal layer L1, the grounding metal of the metal layer L3, the metal layer L5 and the metalized through hole array form an outer conductor;

the dielectric layer L2 and the dielectric layer L4 constitute a dielectric filled between the outer conductor and the inner conductor, and the dielectric layer L2 and the dielectric layer L4 adopt two dielectrics with different dielectric constants.

2. The half-mode ridge-added square coaxial substrate integrated waveguide interconnection device according to claim 1, wherein the half-mode ridge-added square coaxial substrate integrated waveguide interconnection device is composed of the outer conductor, the inner conductor, and two media with different dielectric constants, upper and lower.

3. The device of claim 1 or 2, wherein the thicknesses of the metal layer L1, the metal layer L3 and the metal layer L5 are t, and the thicknesses of the dielectric layer L2 and the dielectric layer L4 are h1 and h2, respectively.

4. The half-die ridged coaxial SoC interconnect according to claim 3, wherein the width a of the intermediate metal of metal layer L3 is less than the widths of metal layers L1 and L5, and metal layer L3 is located on the side of the metallized via in the width direction of the half-die ridged coaxial SoC interconnect.

5. The device of claim 4, wherein the metalized through holes in the array of metalized through holes have a diameter r, and wherein each row of the metalized through holes are arranged at equal intervals d.

6. The half-mode and ridge-wise coaxial substrate integrated waveguide interconnect device according to claim 1 or 2, wherein the half-mode and ridge-wise coaxial substrate integrated waveguide interconnect device filled with different dielectric constant media transmits signals in a quasi-TEM mode.

7. The device of claim 1, wherein the two pieces of metal of the metal layer L3 are disposed in the same plane.

8. The device of claim 1, wherein the two pieces of metal of the metal layer L3 are parallel to the metal layers L1 and L5.

9. The device of claim 1, wherein the grounded metal of metal layer L3 is perforated by an array of metallized vias.

Technical Field

The invention relates to the technical field of circuit board-level/chip-level high-speed data transmission, in particular to a half-mode and ridge-side coaxial substrate integrated waveguide interconnection device, and particularly relates to a half-mode and ridge-side coaxial substrate integrated waveguide interconnection device filled with media with different dielectric constants.

Background

As integrated circuits evolve, the requirements of the integrated circuits for interconnections and devices continue to increase. Transmission lines of wide bandwidth, miniaturization, high density integration, and excellent electromagnetic compatibility are increasingly important. Substrate integration technology has gradually highlighted its attractive advantages in terms of its low cost and good compatibility with planar circuits.

Microstrip lines and coplanar waveguides are the most commonly used planar transmission lines, which support quasi-TEM modes with ultra-wide single-mode bandwidth and simple structure. However, due to their open structure, severe dispersion and crosstalk between adjacent lines can occur at high frequencies. Therefore, they are not suitable for application in high density integration.

Substrate Integrated Waveguide (SIW) is another planar integrated waveguide with excellent shielding performance and low loss. Subsequently, a series of miniaturized or wider bandwidth substrate integrated waveguide SIW structures were proposed, such as half-die SIW (hmsiw), folded SIW (fsiw), spine SIW (rsiw). However, the primary modes of the substrate integrated waveguide-based transmission structure are all TE modes, and baseband signals cannot be directly transmitted.

The Substrate Integrated Coaxial Line (SICL) can be regarded as a substrate integrated waveguide with a loaded inner conductor, the structure supports TEM mode transmission and has good shielding performance. Therefore, the device is suitable for transmitting baseband signals and can be integrated with high density. Document [2: ]: patent document No. CN105226359A discloses a square coaxial substrate integrated waveguide interconnection structure, which includes an outer conductor, an inner conductor, and a dielectric disposed between the outer conductor and the inner conductor. The structure is a substrate integrated coaxial structure. The square coaxial substrate integrated waveguide structure is a quasi-shielding structure, the main mode is a TEM mode, baseband signals can be directly transmitted, and high-density integration can be realized. In chinese patent publication No. CN112186321A, a ridge-added square coaxial substrate integrated waveguide interconnection device is disclosed, which comprises an outer conductor and an inner conductor, wherein a medium is arranged between the outer conductor and the inner conductor; the physical structure of the ridged coaxial substrate integrated waveguide interconnection device is divided into five layers from top to bottom, wherein the first layer is a metal layer L1, the second layer is a dielectric layer L2, the third layer is a metal layer L3, the fourth layer is a dielectric layer L4, and the fifth layer is a metal layer L5. The ridged coaxial substrate integrated waveguide structure disclosed in the document is a quasi-closed structure, adopts a TEM mode to transmit signals, and can be used as a circuit board level/chip level interconnection line circuit.

Document [1] [3] reports a ridged substrate integrated coaxial line, which comprises an outer conductor and an inner conductor, wherein a uniform medium is filled between the inner conductor and the outer conductor. The spine substrate integrated coaxial physical structure is divided into five layers from top to bottom, wherein the first layer is a metal layer L1, the second layer is a dielectric layer L2, the third layer is a metal layer L3, the fourth layer is a dielectric layer L4, the fifth layer is a metal layer L5, and the third layer comprises metal spines on two sides and a middle metal inner conductor. The metal layer L1, two ridges of the metal layer L3 and the metal layer L5 are penetrated by two rows of continuous metal through holes to jointly form an outer conductor. The structure has the advantages of good electromagnetic compatibility, low loss, low dispersion and support of direct current signals. Compared with a square coaxial substrate integrated waveguide structure, the waveguide structure has a more compact size and a larger single-mode bandwidth. But its single mode bandwidth is limited by the cut-off frequency of the higher order mode (TE10 mode).

Document [4] reports a two-medium-filled ridged-substrate integrated waveguide, which is a structure filled with two layers of different media with different dielectric constants in a classical ridged-substrate integrated waveguide (RSIW [5 ]). Compared with the ridge substrate integrated waveguide filled with uniform media, the ridge substrate integrated waveguide filled with different media greatly increases the single-mode bandwidth. However, since the ridged-substrate integrated waveguide is a single-conductor structure, the primary mode is the TE10 mode, and baseband signals cannot be directly transmitted.

Reference/reference:

[1]K.Ning,X.-C.Li and J.Mao,"A Compact Ridged Substrate Integrated Coaxial Line,"2020IEEE MTT-S International Wireless Symposium(IWS),Shanghai,China,2020,pp.1-3.

[2] li Yuan Chun, Yuan, Mao Jun Sen. Square coaxial substrate integrated waveguide interconnect structure CN105226359A [ P ] 2016.

[3]K.Ning,X.-C.Li,H.Zhang and J.Mao,"Ridged Substrate Integrated Coaxial Line for Wideband Millimeter-Wave Transmission,"in IEEE Transactions on Microwave Theory and Techniques,2021,Early Access Article.

[4]S.Moscato,R.Moro,M.Pasian,M.Bozzi and L.Perregrini,"Two-Material Ridge Substrate Integrated Waveguide for Ultra-Wideband Applications,"IEEE Transactions on Microwave Theory and Techniques,vol.63,no.10,pp.3175-3182,Oct.2015.

Disclosure of Invention

In view of the defects in the prior art, the invention aims to provide a half-mode ridge-added square coaxial substrate integrated waveguide interconnection device.

The half-mold and ridge-added coaxial substrate integrated waveguide interconnection device provided by the invention comprises five physical structures which are sequentially arranged from top to bottom, wherein the first layer is a metal layer L1, the second layer is a dielectric layer L2, the third layer is a metal layer L3, the fourth layer is a dielectric layer L4, and the fifth layer is a metal layer L5;

a metalized through hole array is arranged between the metal layer L1 and the metal layer L5, penetrates through the first layer to the fifth layer, and is formed by metalized through holes which are arranged in a row along the length direction of the half-die and ridge-side coaxial substrate integrated waveguide interconnection device;

the metal layer L3 comprises a non-grounded metal and a grounded metal, the grounded metal is a ridge of the half-mold and ridge-side coaxial substrate integrated waveguide interconnection apparatus, and the grounded metal is penetrated by a metallized through hole;

the non-grounded metal of the metal layer L3 constitutes an inner conductor;

the metal layer L1, the grounding metal of the metal layer L3, the metal layer L5 and the metalized through hole array form an outer conductor;

the dielectric layer L2 and the dielectric layer L4 constitute a dielectric filled between the outer conductor and the inner conductor, and the dielectric layer L2 and the dielectric layer L4 adopt two dielectrics with different dielectric constants.

Preferably, the half-mold ridge-added square coaxial substrate integrated waveguide interconnection device is composed of the outer conductor, the inner conductor, and an upper medium and a lower medium with different dielectric constants.

Preferably, the thicknesses of the metal layer L1, the metal layer L3 and the metal layer L5 are all t, and the thicknesses of the dielectric layer L2 and the dielectric layer L4 are h1 and h2 respectively.

Preferably, the width a of the intermediate metal of the metal layer L3 is smaller than the widths of the metal layers L1 and L5, and the metal layer L3 is located at the side of the metallized through hole in the width direction of the half-mold and ridge coaxial soi waveguide interconnection apparatus.

Preferably, the diameter of the metalized through holes in the metalized through hole array is r, and the metalized through holes in each row are arranged at equal intervals, and the interval is d.

Preferably, the half-mold and ridge-side coaxial substrate integrated waveguide interconnection device filled with the media with different dielectric constants adopts a quasi-TEM mode to transmit signals.

Preferably, the two pieces of metal of the metal layer L3 are disposed on the same plane.

Preferably, the two pieces of metal of the metal layer L3 are parallel to the metal layers L1 and L5.

Preferably, the ground metal of metal layer L3 is perforated by a row of metallized vias.

Compared with the prior art, the invention has the following beneficial effects:

1. the half-mode and ridge-square coaxial substrate integrated waveguides filled with different dielectric constant media are interconnected to form a quasi-closed structure, and signals are transmitted in a quasi-TEM mode.

2. Compared with the TE10 mode transmission signal adopted by the rectangular substrate integrated waveguide, the invention does not need a modulation and demodulation device, can directly transmit the baseband signal, and has the advantages of small loss, high speed, simple system and low cost.

3. Compared with a square coaxial substrate integrated waveguide interconnection structure, the square coaxial substrate integrated waveguide interconnection structure has the advantages of more compact size, larger single-mode bandwidth and more free medium arrangement mode.

4. The invention uses two dielectric constants as design parameters, so that the design freedom degree is obviously improved, and the invention can be more suitable for the interconnection requirement of a complex composite medium environment. The cut-off frequency of the first higher order mode is increased, thereby increasing the single mode bandwidth of the main mode.

5. The invention has a double-conductor structure, the main mode is a quasi-TEM mode, and baseband signals can be directly transmitted without a modulation and demodulation module.

6. The invention is more flexibly applicable to three-dimensional integrated circuits with different media mixed and stacked by changing the dielectric constant setting of the media, can design transmission lines in upper and lower two different dielectric materials, and improves the channel density.

Drawings

Other features, objects and advantages of the invention will become more apparent upon reading of the detailed description of non-limiting embodiments with reference to the following drawings:

FIG. 1 is a schematic structural diagram of a half-mold and ridge-side coaxial substrate integrated waveguide interconnection apparatus;

FIG. 2 is a diagram showing the electric field distribution of the main mold cross section of the half-mold and ridge-side coaxial substrate integrated waveguide interconnection apparatus;

FIG. 3 is a cross-sectional electric field distribution display of a first higher order mode of a half-mode-plus-ridge-square coaxial SIW interconnect;

FIG. 4 is a schematic diagram of the S21 parameter of a half-mold ridge-side coaxial SIW interconnect;

fig. 5 is a schematic diagram of the S11 parameter of a mold half-and-ridge coaxial substrate integrated waveguide interconnect.

Detailed Description

The present invention will be described in detail with reference to specific examples. The following examples will assist those skilled in the art in further understanding the invention, but are not intended to limit the invention in any way. It should be noted that it would be obvious to those skilled in the art that various changes and modifications can be made without departing from the spirit of the invention. All falling within the scope of the present invention.

In order to realize the half-module and ridge coaxial substrate integrated waveguide circuit board-level/chip-level substrate integration filled with different dielectric constant media, the invention provides a ridge coaxial substrate integrated waveguide interconnection device suitable for the high-speed interconnection of a circuit board and a chip.

Fig. 1 is a half-mode and ridge-side coaxial substrate integrated waveguide interconnection device filled with different dielectric constant media, which is provided by the invention, and comprises an outer conductor, an inner conductor and two media with different dielectric constants between the inner conductor and the outer conductor, wherein the physical structure of the half-mode and ridge-side coaxial substrate integrated waveguide interconnection device filled with different dielectric constant media is composed of three metal layers and two dielectric layers with different dielectric constants. The ridged coaxial substrate integrated waveguide interconnection device adopts a quasi-TEM mode to transmit signals. Fig. 2 is a cross-sectional view perpendicular to the propagation direction of the half-mold and ridge-side coaxial substrate integrated waveguide interconnection device filled with different dielectric constants provided by the invention.

The physical structure of the half-mode and ridge-square coaxial substrate integrated waveguide interconnection device filled with mediums with different dielectric constants is divided into five layers from top to bottom, wherein the first layer is a metal layer, the second layer is a dielectric layer, the third layer is a metal layer, the fourth layer is a dielectric layer, the fifth layer is a metal layer, the thicknesses of the three metal layers are all t, the thicknesses of the two dielectric layers are h1 and h2 respectively, and the length of waveguide interconnection is L. The third metal layer comprises a grounded metal and a non-grounded metal, the grounded metal is the ridge of the half-mold and ridge-square coaxial substrate integrated waveguide interconnection device, and the non-grounded metal is penetrated by the metalized through hole.

The outer conductor is composed of a first layer metal layer conductor plate, a fifth layer metal layer conductor plate, a third layer non-grounding metal and a metal side wall formed by a column of metalized through hole arrays between the first layer and the fifth layer. The diameter of the metallized through holes is d, and the spacing is s.

The inner conductor is a third layer of non-grounded metal conductor with a width b and a distance g from the grounded metal.

The medium is composed of a second medium layer and a fourth medium layer, medium filling between the inner conductor and the outer conductor is formed, and the second medium layer and the fourth medium layer have different dielectric constants which are respectively expressed as epsilon 1 and epsilon 2.

The cross-sectional electric field distribution of the main mode (quasi-TEM mode) of the half-mode and ridge-side coaxial substrate integrated waveguide filled with different dielectric constants is shown in FIG. 2, and the cross-sectional electric field distribution of the first higher-order mode (quasi-TE 0.5,0 mode) is shown in FIG. 3. The electric fields of the first two modes of the ridge-added substrate integrated coaxial line filled with uniform medium in the reference [1] [2] are uniformly distributed in the medium. The main mode electric field of the half-mode and ridge-square coaxial substrate integrated waveguide filled with different dielectric constant media is mainly concentrated in a high dielectric constant region, and the electric field of the first higher-order mode is mainly concentrated in a low dielectric constant region.

Taking a circuit board-level half-mold and ridge-square coaxial substrate integrated waveguide interconnection filled with different dielectric constant media as an example, a printed circuit board process is taken as an example, dielectric layer L2 adopts a material Rogers 5880 (dielectric constant 2.2, dielectric loss tangent 0.0009), and dielectric layer L4 adopts a material Rogers 3010 (dielectric constant 10.2, dielectric loss tangent 0.0028). The metal via hole distance w is 1mm, and the width a of the inner conductor is 0.25 mm; the thickness t of the metal layer is 0.018mm, the thickness h1 of the dielectric layer L2 is 0.25mm, the thickness h2 of the dielectric layer L4 is 0.38mm, the hole diameter r is 0.2mm, the hole distance d is 0.5mm, the distance S from the inner conductor to the ridge is 0.5mm, the waveguide length L is 10mm, and the transmission characteristic S21 parameter and the reflection characteristic S11 parameter are respectively shown in fig. 4 and 5. In fig. 4 and 5, the horizontal axis represents frequency (freq (ghz)) and the vertical axis represents decibel (dB). Meanwhile, under the same process, a square coaxial substrate integrated waveguide [2] with 50-ohm characteristic impedance and a ridged substrate integrated coaxial line [1] are designed, the design size of the invention is taken as a standard for normalization, and a comparison table of the size of the structure and the single-mode bandwidth is obtained, and is shown in a graph 1.

TABLE 1 comparison table of main technical indexes of the invention and the prior art

The advantages of the present invention over the prior art are shown in table 2:

table 2 the differences and advantages of the present invention over the prior art.

In conclusion, the half-mode and ridge-side coaxial substrate integrated waveguide interconnection device filled with mediums with different dielectric constants, which is designed by the invention, has the advantages of small loss, low time delay crosstalk, compact size and wide bandwidth of a main mode, and is suitable for high-speed data transmission at a circuit board level/a chip level.

In the description of the present application, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience in describing the present application and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present application.

The foregoing description of specific embodiments of the present invention has been presented. It is to be understood that the present invention is not limited to the specific embodiments described above, and that various changes or modifications may be made by one skilled in the art within the scope of the appended claims without departing from the spirit of the invention. The embodiments and features of the embodiments of the present application may be combined with each other arbitrarily without conflict.