阅读说明：本技术 一种基于环形玻璃通孔结构的片上变压器 (On-chip transformer based on annular glass through hole structure ) 是由 刘阳 刘晓贤 卢启军 尹湘坤 朱樟明 杨银堂 于 2019-11-28 设计创作，主要内容包括：本发明涉及一种基于环形玻璃通孔结构的片上变压器,其特征在于,包括自上而下依次设置的第一金属层、第二金属层、玻璃通孔衬底层、第三金属层以及第四金属层,其中,第一金属层包括第一金属框以及设置在第一金属框内的多个第一连接件；第二金属层包括第二金属框以及设置在第二金属框内的多个第二连接件；玻璃通孔衬底层包括衬底和穿透衬底的多个玻璃通孔结构；第三金属层包括多个第三连接件；第四金属层包括多个第四连接件；多个玻璃通孔结构通过多个第一连接件、多个第二连接件、多个第三连接件以及多个第四连接件依次首尾连接,形成三维螺旋结构。本发明的片上变压器的集成度高、Q值性能好、耦合度高。(The invention relates to an on-chip transformer based on an annular glass through hole structure, which is characterized by comprising a first metal layer, a second metal layer, a glass through hole substrate layer, a third metal layer and a fourth metal layer which are sequentially arranged from top to bottom, wherein the first metal layer comprises a first metal frame and a plurality of first connecting pieces arranged in the first metal frame; the second metal layer comprises a second metal frame and a plurality of second connecting pieces arranged in the second metal frame; the glass through hole substrate layer comprises a substrate and a plurality of glass through hole structures penetrating through the substrate; the third metal layer comprises a plurality of third connecting pieces; the fourth metal layer comprises a plurality of fourth connecting pieces; the plurality of glass through hole structures are sequentially connected end to end through the plurality of first connecting pieces, the plurality of second connecting pieces, the plurality of third connecting pieces and the plurality of fourth connecting pieces to form a three-dimensional spiral structure. The on-chip transformer has the advantages of high integration level, good Q value performance and high coupling degree.)

1. An on-chip transformer based on an annular glass through hole structure is characterized by comprising a first metal layer (1), a second metal layer (2), a glass through hole substrate layer (3), a third metal layer (4) and a fourth metal layer (5) which are sequentially arranged from top to bottom, wherein,

the first metal layer (1) comprises a first metal frame (101) and a plurality of first connectors (102) arranged in the first metal frame (101);

the second metal layer (2) comprises a second metal frame (201) and a plurality of second connecting pieces (202) arranged in the second metal frame (201);

the glass through-hole substrate layer (3) comprises a substrate (301) and a plurality of glass through-hole structures (6) penetrating through the substrate (301);

the third metal layer (4) comprises a plurality of third connections (401);

the fourth metal layer (5) comprises a plurality of fourth connections (501);

the plurality of glass through hole structures (6) are sequentially connected end to end through the plurality of first connecting pieces (102), the plurality of second connecting pieces (202), the plurality of third connecting pieces (401) and the plurality of fourth connecting pieces (501) to form a three-dimensional spiral structure.

2. The on-chip transformer based on annular glass via structures of claim 1, wherein a plurality of the glass via structures (6) are arranged in a 2N array structure comprising a first row of glass via structures and a second row of glass via structures, wherein N ≧ 2.

3. The on-chip transformer based on annular glass via structures of claim 1, wherein each of the glass via structures (6) comprises an outer metal ring (601), an intermediate dielectric ring (602), and an inner metal pillar (603) in order from outside to inside in a radial direction.

4. The on-chip transformer based on annular glass via structure of claim 3, characterized in that the plurality of first connectors (102) are arranged in parallel, and are respectively connected with the upper ends of the inner metal columns (603) of the corresponding glass via structure (6); the plurality of fourth connecting pieces (501) are arranged in parallel and are respectively connected with the lower ends of the inner metal columns (603) of the corresponding glass through hole structures (6) to form an internal three-dimensional spiral structure.

5. The on-chip transformer based on a ring-shaped glass via structure according to claim 4, wherein the first metal layer (1) further comprises a first feed (103) and a first ground (104) disposed within the first metal frame (101), wherein,

the first feed (103) is connected to a first end of the internal three-dimensional helical structure;

one end of the first grounding piece (104) is connected with the second end of the internal three-dimensional spiral structure, and the other end of the first grounding piece is connected with the first metal frame (101).

6. The on-chip transformer based on annular glass via structure of claim 3, characterized in that the plurality of second connectors (202) are arranged in parallel, and are respectively connected with the upper ends of the outer metal rings (601) of the corresponding glass via structures (6); the plurality of third connecting pieces (401) are arranged in parallel and are respectively connected with the lower ends of the outer-layer metal rings (601) of the corresponding glass through hole structures (6) to form an external three-dimensional spiral structure.

7. The on-chip transformer based on a ring-shaped glass via structure according to claim 6, wherein the second metal layer (2) further comprises a second feeding piece (203) and a second grounding piece (204) arranged within the second metal frame (201), wherein,

the second metal frame (201) is connected with the first end of the external three-dimensional spiral structure;

one end of the second grounding piece (204) is connected with the second end of the external three-dimensional spiral structure, and the other end of the second grounding piece is connected with the second metal frame (201).

8. The on-chip transformer based on the annular glass via structure of claim 3, wherein the height of the intermediate dielectric ring (602) of the glass via structure (6) is equal to that of the inner metal pillar (603), and the height of the outer metal ring (601) is equal to that of the substrate (301).

9. The on-chip transformer based on a ring-shaped glass via structure according to claim 1, characterized in that a first dielectric layer (7) is arranged between the first metal layer (1) and the second metal layer (2).

10. The on-chip transformer based on a ring-shaped glass via structure according to claim 1, characterized in that a second dielectric layer (8) is arranged between the third metal layer (4) and the fourth metal layer (5).

Technical Field

The invention belongs to the technical field of passive devices in radio frequency/microwave integrated circuits, and particularly relates to an on-chip transformer based on a ring-shaped glass through hole structure.

Background

With the development of integrated circuits, wireless products are smaller and more functional, and relate to various aspects of civil and military applications. The level of microwave monolithic integrated circuits and radio frequency integrated circuits largely determines the state of the art in various microwave and radio frequency wireless systems. Radio frequency refers to a frequency band used for wireless communication, and within a range of 250MHz to 30GHz, along with the development of semiconductor manufacturing technology, radio frequency integrated circuits have received more and more attention and gradually become a hot spot in academia and industry.

In a passive device, an on-chip transformer is an important component of radio frequency design, and is widely applied to low noise amplifiers, voltage control oscillators, impedance matching circuits, direct current isolation circuits, power transmission circuits and single-end to differential circuit conversion balun elements.

At present, a single-chip transformer is mostly built in a planar mode based on staggered layout, however, substrate magnetic loss and ohmic loss in a planar geometric structure are large, and the planar transformer occupies too large chip area, so that the reduction of system weight is difficult to realize. With the increasing demand of people on high-speed wireless mobile communication and high-performance chips, the development of small size and light weight of the transformer is urgent.

Disclosure of Invention

In order to solve the problems in the prior art, the invention provides an on-chip transformer based on a ring-shaped glass through hole structure. The technical problem to be solved by the invention is realized by the following technical scheme:

the invention provides an on-chip transformer based on an annular glass through hole structure, which comprises a first metal layer, a second metal layer, a glass through hole substrate layer, a third metal layer and a fourth metal layer which are sequentially arranged from top to bottom, wherein,

the first metal layer comprises a first metal frame and a plurality of first connecting pieces arranged in the first metal frame;

the second metal layer comprises a second metal frame and a plurality of second connecting pieces arranged in the second metal frame;

the glass through hole substrate layer comprises a substrate and a plurality of glass through hole structures penetrating through the substrate;

the third metal layer comprises a plurality of third connectors;

the fourth metal layer comprises a plurality of fourth connectors;

the plurality of glass through hole structures are sequentially connected end to end through the plurality of first connecting pieces, the plurality of second connecting pieces, the plurality of third connecting pieces and the plurality of fourth connecting pieces to form a three-dimensional spiral structure.

In one embodiment of the invention, a plurality of the glass through hole structures are arranged in a 2N array structure, including a first row of glass through hole structures and a second row of glass through hole structures, wherein N is more than or equal to 2.

In one embodiment of the invention, each glass through hole structure comprises an outer metal ring, an intermediate medium ring and an inner metal column from outside to inside in sequence in the radial direction.

In one embodiment of the present invention, the plurality of first connecting members are arranged in parallel and respectively connected to the upper ends of the inner metal pillars of the corresponding glass via structures; the plurality of fourth connecting pieces are arranged in parallel and are respectively connected with the lower ends of the inner-layer metal columns of the corresponding glass through hole structures to form an internal three-dimensional spiral structure.

In one embodiment of the present invention, the first metal layer further includes a first feeding part and a first grounding part disposed within the first metal frame, wherein,

the first feed element is connected with a first end of the internal three-dimensional spiral structure;

one end of the first grounding piece is connected with the second end of the internal three-dimensional spiral structure, and the other end of the first grounding piece is connected with the first metal frame.

In an embodiment of the invention, the plurality of second connecting pieces are arranged in parallel and respectively connected with the upper ends of the outer metal rings of the corresponding glass through hole structures; the plurality of third connecting pieces are arranged in parallel and are respectively connected with the lower ends of the outer metal rings of the corresponding glass through hole structures to form an external three-dimensional spiral structure.

In one embodiment of the present invention, the second metal layer further includes a second feeding part and a second grounding part disposed within the second metal frame, wherein,

the second metal frame is connected with the first end of the external three-dimensional spiral structure;

one end of the second grounding piece is connected with the second end of the external three-dimensional spiral structure, and the other end of the second grounding piece is connected with the second metal frame.

In one embodiment of the invention, the height of the middle dielectric ring of the glass through hole structure is equal to that of the inner metal column, and the height of the outer metal ring is equal to that of the substrate.

In an embodiment of the present invention, a first dielectric layer is disposed between the first metal layer and the second metal layer.

In an embodiment of the present invention, a second dielectric layer is disposed between the third metal layer and the fourth metal layer.

Compared with the prior art, the invention has the beneficial effects that:

1. the on-chip transformer based on the annular glass through hole structure is based on the TGV technology, effectively utilizes huge idle space on a glass substrate, further reduces the area of a transfer plate occupied by an integrated passive device, and improves the integration level;

2. according to the on-chip transformer based on the annular glass through hole structure, the primary coil is completely wrapped on the secondary coil, so that the prepared on-chip transformer has high coupling degree.

The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical means of the present invention more clearly understood, the present invention may be implemented in accordance with the content of the description, and in order to make the above and other objects, features, and advantages of the present invention more clearly understood, the following preferred embodiments are described in detail with reference to the accompanying drawings.

Drawings

Fig. 1 is a perspective view of an on-chip transformer based on a ring-shaped glass via structure according to an embodiment of the present invention;

FIG. 2 is a front view of a through glass via substrate layer provided by an embodiment of the present invention;

FIG. 3 is a front view of a first metal layer according to an embodiment of the present invention;

FIG. 4 is a front view of a second metal layer according to an embodiment of the present invention;

FIG. 5 is a front view of a third metal layer according to an embodiment of the present invention;

FIG. 6 is a front view of a fourth metal layer according to an embodiment of the present invention;

FIG. 7 is a Q-value curve diagram of an on-chip transformer based on a ring-shaped glass via structure according to an embodiment of the present invention;

FIG. 8 is a coupling coefficient graph of an on-chip transformer based on a ring glass via structure according to an embodiment of the present invention;

fig. 9 is a graph of inductance values of an on-chip transformer based on a doughnut-shaped glass via structure according to an embodiment of the present invention.

Description of the reference numerals

1-a first metal layer; 101-a first metal frame; 102-a first connector; 103-a first feed; 104-a first ground; 2-a second metal layer; 201-a second metal frame; 202-a second connector; 203-a second feed; 204-a second ground; 3-a glass via substrate layer; 301-a substrate; 4-a third metal layer; 401-a third connection; 5-a fourth metal layer; 501-a fourth connecting piece; 6-glass via structure; 601-outer metal ring; 602-intermediate media ring; 603-inner metal columns; 7-a first dielectric layer; 8-a second dielectric layer.

Detailed Description

To further illustrate the technical means and effects of the present invention adopted to achieve the predetermined object, the following describes in detail an on-chip transformer based on a ring glass via structure according to the present invention with reference to the accompanying drawings and the detailed description.

The foregoing and other technical matters, features and effects of the present invention will be apparent from the following detailed description of the embodiments, which is to be read in connection with the accompanying drawings. The technical means and effects of the present invention adopted to achieve the predetermined purpose can be more deeply and specifically understood through the description of the specific embodiments, however, the attached drawings are provided for reference and description only and are not used for limiting the technical scheme of the present invention.

It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that an article or device that comprises a list of elements does not include only those elements but may include other elements not expressly listed. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of additional like elements in the article or device comprising the element.

Example one

Referring to fig. 1, fig. 1 is a perspective view of an on-chip transformer based on a circular glass via structure according to an embodiment of the present invention, and as shown in the figure, the on-chip transformer based on a circular glass via structure according to the embodiment includes a first metal layer 1, a second metal layer 2, a glass via substrate layer 3, a third metal layer 4, and a fourth metal layer 5, which are sequentially disposed from top to bottom. The glass through hole substrate layer 3 comprises a substrate 301 and a plurality of glass through hole structures 6 penetrating through the substrate 301, wherein the plurality of glass through hole structures 6 are arranged into a 2N array structure, and N is larger than or equal to 2. Optionally, the second row and first column of glass via structures 6 are aligned with the first row and second column of glass via structures 6, and so on, the second row and nth column of glass via structures 6 are aligned with the first row and nth-1 column of glass via structures 6.

Referring to fig. 2 in combination, fig. 2 is a front view of a glass via substrate layer according to an embodiment of the present invention, as shown in the figure, in this embodiment, 4 glass via structures 6 are arranged in a 2 × 2 array structure in a glass via substrate layer 3, where the glass via structures 6 in a second row and a first column are aligned with the glass via structures 6 in a first row and a second column, each glass via structure 6 sequentially includes, from outside to inside in a radial direction, an outer metal ring 601, an intermediate medium ring 602, and inner metal pillars 603, the outer metal ring 601 is equal to the substrate 301 in height, and the intermediate medium ring 602 is equal to the inner metal pillars 603 in height and is greater than the outer metal ring 601 in height. Preferably, the outer metal ring 601 and the inner metal pillar 603 are formed of copper or aluminum, the middle dielectric ring 602 is formed of polyimide, and the middle dielectric ring 602 serves as an electrical isolation medium between the outer metal ring 601 and the inner metal pillar 603.

Referring to fig. 3 and fig. 6 in combination, fig. 3 is a front view of a first metal layer according to an embodiment of the present invention, and fig. 6 is a front view of a fourth metal layer according to an embodiment of the present invention. As shown in the figure, the first metal layer 1 includes a first metal frame 101 and a plurality of first connectors 102 disposed in the first metal frame 101, and the plurality of first connectors 102 are disposed in parallel to interconnect upper ends of the inner metal pillars 603 of the corresponding glass via structures 6. The fourth metal layer 5 includes a plurality of fourth connection members 501, and the plurality of fourth connection members 501 are arranged in parallel to interconnect the lower ends of the inner metal pillars 603 of the respective glass via structures 6. The plurality of first connecting pieces 102, the inner metal columns 603 of the plurality of glass via structures 6, and the plurality of fourth connecting pieces 501 are sequentially connected end to form an internal three-dimensional spiral structure, and the internal three-dimensional spiral structure is used as a secondary coil of the on-chip transformer in this embodiment. Preferably, the first metal frame 101, the first connection member 102, and the fourth connection member 501 are formed of copper or aluminum, and the first metal frame 101 is grounded.

Further, the first metal layer of the present embodiment further includes a first feeding element 103 and a first grounding element 104 disposed in the first metal frame 101, wherein the first feeding element 103 is connected to the first end of the internal three-dimensional spiral structure; one end of the first ground member 104 is connected to the second end of the internal three-dimensional spiral structure, and the other end is connected to the first metal frame 101. Preferably, the first feeding piece 103 and the first grounding piece 104 are formed of metallic copper or aluminum. In the present embodiment, the length of the first connection member 102 connected to the first feeding member 103 and the first grounding member 104 is half of the length of the remaining first connection member 102. The secondary coil of the on-chip transformer is connected to the ground terminal by the connection of the first ground member 104 to the first metal frame 101.

Taking 2 x 2 of the glass via array in fig. 1 as an example, to specifically describe the connection relationship of the internal three-dimensional spiral structure, as shown in the figure, 3 first connecting members 102 are arranged in parallel in the first metal frame 101, the fourth metal layer 5 includes 2 fourth connecting members 501 arranged in parallel, the upper end of the inner metal pillar 603 of the first row of first glass via structures 6 is connected to one first connecting member 102, the lower end is connected to the lower end of the inner metal pillar 603 of the second row of first glass via structures 6 through one fourth connecting member 501, the upper end of the inner metal pillar 603 of the second row of first glass via structures 6 is connected to the upper end of the inner metal pillar 603 of the first row of second glass via structures 6 through one first connecting member 102, the lower end of the inner metal pillar 603 of the first row of second glass via structures 6 is connected to the lower end 603 of the inner metal pillar of the second row of second glass via structures 6 through one fourth connecting member 501, the upper ends of the inner metal studs 603 of the second row of second glass via structures 6 are then connected to the first connector 102, forming a spiral structure. The first feeding element 103 is connected to the first connecting element 102 connected to the upper ends of the inner metal studs 603 of the first row of first glass via structures 6, and the first grounding element 104 is connected to the first connecting element 102 connected to the upper ends of the inner metal studs 603 of the second row of second glass via structures 6.

Referring to fig. 4 and fig. 5 in combination, fig. 4 is a front view of a second metal layer according to an embodiment of the present invention, and fig. 5 is a front view of a third metal layer according to an embodiment of the present invention. As shown in the figure, the second metal layer 2 includes a second metal frame 201 and a plurality of second connection members 202 disposed in the second metal frame 201, and the plurality of second connection members 202 are disposed in parallel to interconnect upper ends of the outer metal rings 601 of the corresponding glass via structures 6. The third metal layer 4 includes a plurality of third connection members 401, and the plurality of third connection members 401 are arranged in parallel to interconnect the lower ends of the outer metal rings 601 of the respective glass via structures 6. The plurality of second connectors 202, the outer metal rings 601 of the plurality of glass via structures 6, and the plurality of third connectors 401 are sequentially connected end to form an external three-dimensional spiral structure, and the external three-dimensional spiral structure serves as a primary coil of the on-chip transformer of this embodiment. Preferably, the second metal frame 201, the second connection member 202, and the third connection member 401 are formed of metallic copper or aluminum. In this embodiment, circular holes having the same diameter as the intermediate dielectric ring 602 are etched at the joints of the second connecting member 202 and the third connecting member 401 with the corresponding glass via structures 6, so as to allow the intermediate dielectric ring 602 and the inner metal pillar 603 of the glass via structures 6 to pass through. The second metal frame 201 is grounded.

Further, the second metal layer 2 of the present embodiment further includes a second feeding part 203 and a second grounding part 204 disposed in the second metal frame 201, wherein the second metal frame 201 is connected to the first end of the external three-dimensional spiral structure; one end of the second ground member 204 is connected to the second end of the external three-dimensional spiral structure, and the other end is connected to the second metal frame 201. Preferably, the second feeding piece 203 and the second grounding piece 204 are formed of metallic copper or aluminum. In the present embodiment, the length of the second connection member 202 connected to the second feeding member 203 and the second grounding member 204 is half of the length of the remaining second connection member 202. The primary coil of the on-chip transformer is connected to the ground terminal by the connection of the second ground member 204 to the second metal frame 201.

Taking 2 × 2 glass via array in fig. 1 as an example to specifically describe the connection relationship of the external three-dimensional spiral structure, as shown in the figure, 3 second connecting members 202 are arranged in parallel in the second metal frame 201, the third metal layer 4 includes 2 third connecting members 401 arranged in parallel, the upper end of the outer metal ring 601 of the first row of first glass via structures 6 is connected to one second connecting member 202, the lower end is connected to the lower end of the outer metal ring 601 of the second row of first glass via structures 6 through one third connecting member 401, the upper end of the outer metal ring 601 of the second row of first glass via structures 6 is connected to the upper end of the outer metal ring 601 of the first row of second glass via structures 6 through one second connecting member 202, the lower end of the outer metal ring 601 of the first row of second glass via structures 6 is connected to the lower end of the outer metal ring 601 of the second row of second glass via structures 6 through one third connecting member 401, the upper end of the outer metal ring 601 of the second row of second glass via structures 6 is then connected to the second connector 202, forming a spiral structure. The second feeding element 203 is connected to the second connecting element 202 connected to the upper end of the outer metal ring 601 of the first row of first glass via structures 6, and the second grounding element 204 is connected to the second connecting element 202 connected to the upper end of the outer metal ring 601 of the second row of second glass via structures 6.

Further, the on-chip transformer based on the ring-shaped glass via structure of the present embodiment further includes a first dielectric layer 7 and a second dielectric layer 8, where the first dielectric layer 7 is disposed between the first metal layer 1 and the second metal layer 2, and the second dielectric layer 8 is disposed between the third metal layer 4 and the fourth metal layer 5. Preferably, the material of the first dielectric layer 7 and the second dielectric layer 8 is polyimide, which functions to achieve electrical isolation between the first metal layer 1 and the second metal layer 2 and electrical isolation between the third metal layer 4 and the fourth metal layer 5. A plurality of through holes are formed in the first dielectric layer 7 and the second dielectric layer 8, the positions of the through holes correspond to the positions of the glass through hole structures 6, the glass through hole structures 6 penetrate through the through holes, the aperture of each through hole is the same as the diameter of the middle dielectric ring 602 of each glass through hole structure 6, and the height of the middle dielectric ring 602 and the height of the inner metal column 603 are equal to the sum of the heights of the substrate layer 301, the first dielectric layer 7 and the second dielectric layer 8.

The on-chip transformer based on the annular Glass Through hole structure of this embodiment, based on TGV (Through Glass Via) technique, effectively utilized the huge idle space on the Glass substrate, further reduced the keyset area that integrated passive device occupies, improved the integration level, in addition, utilize the characteristics of the natural high resistivity of Glass substrate, can improve the Q value performance of passive transformer, and the primary coil of the on-chip transformer of this embodiment wraps up secondary coil completely for the on-chip transformer that the preparation obtained has higher degree of coupling.

Example two

In this embodiment, a simulation experiment is performed on the on-chip transformer based on the ring-shaped glass via structure in the first embodiment. Referring to fig. 7, 8 and 9, fig. 7 is a Q-value curve diagram of an on-chip transformer based on a ring-shaped glass via structure according to an embodiment of the present invention; FIG. 8 is a coupling coefficient graph of an on-chip transformer based on a ring glass via structure according to an embodiment of the present invention; fig. 9 is a graph of inductance values of an on-chip transformer based on a doughnut-shaped glass via structure according to an embodiment of the present invention. As can be seen from fig. 7, the on-chip transformer according to the embodiment of the present invention has a high Q value, which is 12.2 at most, and as can be seen from fig. 8, the on-chip transformer according to the embodiment of the present invention has a coupling coefficient greater than 0.70 and a high coupling coefficient within 10GHz, and as can be seen from fig. 9, the resonance frequency of the on-chip transformer according to the embodiment of the present invention is 25 GHz.

The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.