阅读说明：本技术 壳体及电子设备 (Shell and electronic equipment ) 是由 李辉 于 2021-01-29 设计创作，主要内容包括：本申请公开了一种壳体及电子设备,属于通信设备技术领域,所述壳体包括依次贴合的电致变色层(120)、储电层(130)和第一基板(110),所述储电层(130)包括光电转化单元(131)、正电极(132)和负电极(133),所述光电转化单元(131)分别与所述正电极(132)和所述负电极(133)电连接,所述电致变色层(120)通过所述正电极(132)和所述负电极(133)与所述光电转化单元(131)电导通。上述方案能够解决电子设备的能耗较大的问题。(The application discloses casing and electronic equipment belongs to communication equipment technical field, the casing is including electrochromic layer (120), accumulate layer (130) and the first base plate (110) of laminating in proper order, accumulate layer (130) includes photoelectric conversion unit (131), positive electrode (132) and negative electrode (133), photoelectric conversion unit (131) respectively with positive electrode (132) with negative electrode (133) electricity is connected, electrochromic layer (120) pass through positive electrode (132) with negative electrode (133) with photoelectric conversion unit (131) electric conductance. The scheme can solve the problem that the energy consumption of the electronic equipment is large.)

1. A housing, comprising an electrochromic layer (120), an electric storage layer (130) and a first substrate (110) which are attached in sequence, wherein the electric storage layer (130) comprises a photoelectric conversion unit (131), a positive electrode (132) and a negative electrode (133), the photoelectric conversion unit (131) is electrically connected with the positive electrode (132) and the negative electrode (133), respectively, and the electrochromic layer (120) is electrically conducted with the photoelectric conversion unit (131) through the positive electrode (132) and the negative electrode (133).

2. The case according to claim 1, wherein the electrical storage layer (130) further comprises an electrical energy storage (134), and the photoelectric conversion unit (131) is electrically conducted to the positive electrode (132) or the negative electrode (133) through the electrical energy storage (134).

3. The housing according to claim 2, wherein the electrical energy storage (134) comprises a first capacitor plate (1341) and a second capacitor plate (1342) which are oppositely arranged, the first capacitor plate (1341) is connected with the photoelectric conversion unit (131), and the second capacitor plate (1342) is connected with the positive electrode (132) or the negative electrode (133).

4. The housing according to claim 1, wherein the electric storage layer (130) comprises a plurality of photoelectric conversion unit groups, each of the photoelectric conversion unit groups comprises a plurality of the photoelectric conversion units (131), the plurality of photoelectric conversion unit groups are sequentially connected in series, and the photoelectric conversion units (131) in each of the photoelectric conversion unit groups are sequentially connected in parallel.

5. The case according to claim 1, wherein the photoelectric conversion unit (131) comprises a P-type semiconductor (1311), an N-type semiconductor (1312), and an amorphous silicon layer (1313), the P-type semiconductor (1311) and the N-type semiconductor (1312) being in conduction through the amorphous silicon layer (1313), the N-type semiconductor (1312) being in conduction with the positive electrode (132), and the P-type semiconductor (1311) being in conduction with the negative electrode (133).

6. The case according to claim 5, wherein the electrical storage layer (130) further comprises a second substrate (135) and a first light shielding layer (136), the second substrate (135) is located between the photoelectric conversion unit (131) and the first substrate (110), the first light shielding layer (136) is located between the second substrate (135) and the photoelectric conversion unit (131), and the first light shielding layer (136) is used for covering the amorphous silicon layer (1313).

7. The case of claim 6, wherein the electrical storage layer (130) further comprises an insulating buffer layer (137), the insulating buffer layer (137) is located between the photoelectric conversion unit (131) and the second substrate (135), and the first light shielding layer (136) is embedded in the insulating buffer layer (137).

8. The case according to claim 7, wherein the charge storage layer (130) further comprises a first protective layer (138), the photoelectric conversion unit (131) is located between the first protective layer (138) and the insulating buffer layer (137), and a portion of the amorphous silicon layer (1313) is embedded in the first protective layer (138).

9. The housing according to claim 1, characterized in that the housing (100) comprises a second protective layer (140), the second protective layer (140) being applied to a side of the electrochromic layer (120) facing away from the storage layer (130).

10. An electronic device characterized by comprising the housing of any one of claims 1 to 9.

Technical Field

The application belongs to the technical field of shooting equipment, and particularly relates to a shell and electronic equipment.

Background

With the rapid development of electronic devices, the electronic devices are more and more widely used, and electronic devices such as mobile phones and tablet computers play more and more roles in the aspects of work, life, entertainment and the like of people. However, products of different brands are different in structure and style, so that the difference of product appearance and fashion attribute become one of the decisive factors of product transaction rate.

In the related art, a housing of an electronic device includes a substrate and an electrochromic layer attached to the substrate, and the electronic device turns color of the electrochromic layer by powering on the electrochromic layer, so as to realize individualization of an appearance of the electronic device.

In implementing the invention, the inventor finds that the related art has a problem that the electronic device needs to power on the electrochromic layer, thereby increasing the power consumption of the electronic device.

Disclosure of Invention

An object of the embodiment of the application is to provide a shell and an electronic device, which can solve the problem that the energy consumption of the electronic device is large.

In order to solve the technical problem, the present application is implemented as follows:

the embodiment of the application provides a shell, including electrochromic layer, electric storage layer and the first base plate of laminating in proper order, the electric storage layer includes photoelectric conversion unit, positive electrode and negative electrode, photoelectric conversion unit respectively with the positive electrode with the negative electrode electricity is connected, electrochromic layer passes through the positive electrode with the negative electrode with photoelectric conversion unit electric conductance leads to.

In the embodiment of the present application, the electric storage layer includes a photoelectric conversion unit, a negative electrode, and a positive electrode, the photoelectric conversion unit is connected to the positive electrode and the negative electrode, respectively, and the electrochromic layer is electrically conducted to the photoelectric conversion unit through the positive electrode and the negative electrode. In this scheme, when ambient light irradiates the photoelectric conversion unit, electrons inside the photoelectric conversion unit are excited by photons to form a current, so that a photoelectric effect occurs, and the current generated by the photoelectric conversion unit is loaded on the electrochromic layer through the positive electrode and the negative electrode, so that the electrochromic layer changes color. In the scheme, the current for driving the electrochromic layer to change color is generated by the photoelectric effect for ambient light, so that the electronic equipment does not need to be electrified for the electrochromic layer, and the energy consumption of the electronic equipment is reduced.

Drawings

FIG. 1 is a schematic structural diagram of a housing disclosed in an embodiment of the present application;

FIG. 2 is a schematic structural diagram of a charge storage layer of a housing disclosed in an embodiment of the present application;

fig. 3 is a cross-sectional view of a charge storage layer of a housing disclosed in an embodiment of the present application.

Description of reference numerals:

100-shell, 110-first substrate, 120-electrochromic layer, 130-electricity storage layer, 131-photoelectric conversion unit, 1311-P-type semiconductor, 1312-N-type semiconductor, 1313-amorphous silicon layer, 132-positive electrode, 133-negative electrode, 134-electric energy storage, 1341-first capacitor plate, 1342-second capacitor plate, 135-second substrate, 136-first light shielding layer, 137-insulating buffer layer, 138-first protective layer and 140-second protective layer.

Detailed Description

The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some, but not all, embodiments of the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

The terms first, second and the like in the description and in the claims of the present application are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the application are capable of operation in sequences other than those illustrated or described herein. In addition, "and/or" in the specification and claims means at least one of connected objects, a character "/" generally means that a preceding and succeeding related objects are in an "or" relationship.

The housing provided in the embodiments of the present application is described in detail below with reference to the accompanying drawings through specific embodiments and application scenarios thereof.

Referring to fig. 1 to 3, an embodiment of the present disclosure discloses a housing, and the disclosed housing 100 includes a first substrate 110, an electrochromic layer 120, and an electric storage layer 130.

The first substrate 110 provides a mounting base for other constituent elements of the case 100. The first substrate 110 may be made of a transparent material such as a polyimide transparent film, resin, or plastic. The electrochromic layer 120 is capable of changing color when energized to enable personalization of the housing 100. The electrochromic layer 120 may be made of tungsten trioxide, polythiophene and its derivatives, viologen, tetrathiafulvalene, metal phthalocyanine compounds, and the like. The electrochromic layer 120 changes color by changing optical properties of the material, such as changing the reflectivity, transmittance, or absorption of the material. The electrochromic layer 120 undergoes a stable, reversible change primarily under the influence of an applied electric field, and thus exhibits a reversible change in color and transparency in appearance.

Storage layer 130 provides electrochromic layer 120 with the electrical energy required for the color change.

The electrochromic layer 120, the electric storage layer 130, and the first substrate 110 are sequentially attached, the electric storage layer 130 includes a photoelectric conversion unit 131, a positive electrode 132, and a negative electrode 133, and the photoelectric conversion unit 131 may be electrically connected to the positive electrode 132 and the negative electrode 133, respectively. The electrochromic layer 120 is electrically conducted with the photoelectric conversion unit 131 through the positive electrode 132 and the negative electrode 133. Alternatively, the positive electrode 132 and the negative electrode 133 may be made of a conductive metal material, such as copper, aluminum, silver, magnesium, etc., although the positive electrode 132 and the negative electrode 133 may also be made of other conductive materials, which is not limited herein.

When ambient light irradiates the photoelectric conversion unit 131, electrons inside the photoelectric conversion unit 131 are excited by photons to form a current, so that a photoelectric effect occurs, and the current generated by the photoelectric conversion unit 131 is loaded on the electrochromic layer 120 through the positive electrode 132 and the negative electrode 133, so that the electrochromic layer 120 is discolored. When the ambient light is insufficient, or there is no light, the electrochromic layer 120 returns to its normal color. The photoelectric effect is common knowledge and will not be described in detail herein.

In the embodiment disclosed in the present application, the current for driving the electrochromic layer 120 to change color is generated by the photoelectric effect for the ambient light, so that the electronic device does not need to be powered on for the electrochromic layer 120, and the energy consumption of the electronic device is reduced.

In addition, in the case of the background art, a circuit layer electrically connected to a power supply device of the electronic device needs to be arranged, so as to energize the electrochromic layer, thereby affecting the flatness of the case and the thickness of the case. In the embodiment disclosed in the application, the housing 100 itself can generate current through the photoelectric effect, so that a circuit layer electrically connected to a power supply device of the electronic device is not required to be arranged, and thus the flatness and thickness of the housing 100 are not easily affected, and the appearance performance of the electronic device is improved.

Alternatively, the electrochromic layer 120, the power storage layer 130 and the first substrate 110 may be bonded by an optical adhesive, but other bonding materials may also be used, and the present disclosure is not limited thereto. However, it should be noted that the adhesive material needs to have a certain light transmittance so as not to block ambient light and further not to affect the photoelectric effect of the storage layer 130.

In the above embodiments, the storage layer 130 may cover the first substrate 110 entirely, or may cover the first substrate 110 partially. The area of the storage layer 130 covering the first substrate 110 can be selected according to actual needs. The electrochromic layer 120 may completely cover the storage layer 130, or may partially cover the storage layer 130, and the area of the electrochromic layer 120 covering the storage layer 130 may be selected according to actual needs.

The current stability generated by the photoelectric conversion unit 131 illuminated by the ambient light is poor, and the color change effect of the housing 100 is poor. In another alternative embodiment, the electric storage layer 130 may further include an electric energy storage 134, and the photoelectric conversion unit 131 is electrically conducted with the positive electrode 132 or the negative electrode 133 through the electric energy storage 134. In this scheme, the electric energy storage 134 is used for storing the electric energy generated by the photoelectric conversion unit 131, and the electric energy is output after being stored, so that the output current is more stable, and further the color change effect of the casing 100 is improved.

Specifically, the electric energy storage 134 may be set to a first preset value, and when the electric energy stored in the electric energy storage 134 reaches the first preset value, the electric energy storage 134 outputs the electric energy to the electrochromic layer 120. For example, when the first preset value is 3V, the electric energy stored in the electric energy storage 134 reaches 3V, and thus a voltage of 3V at the temperature is output to the electrochromic layer 120.

The present application discloses a specific configuration of the electrical energy storage 134, although other configurations are not limited herein. Specifically, the electric energy storage 134 may include a first capacitor plate 1341 and a second capacitor plate 1342 disposed opposite to each other, wherein the first capacitor plate 1341 is connected to the photoelectric conversion unit 131, the second capacitor plate 1342 is connected to the positive electrode 132, or the second capacitor plate 1342 is connected to the negative electrode 133. When the photoelectric conversion unit 131 is irradiated by ambient light to generate a current, it is equivalent to charging the first capacitor plate 1341 and the second capacitor plate 1342, and after the first capacitor plate 1341 and the second capacitor plate 1342 are charged, a potential difference is formed, and the first capacitor plate 1341 and the second capacitor plate 1342 are communicated with the electrochromic layer 120, which is equivalent to discharging the first capacitor plate 1341 and the second capacitor plate 1342. In this scheme, the first capacitor plate 1341 and the second capacitor plate 1342 can provide a stable current for the electrochromic layer 120, and the first capacitor plate 1341 and the second capacitor plate 1342 have simple structures, so that the manufacturing process of the housing 100 is simple.

Alternatively, the first capacitor plate 1341 and the second capacitor plate 1342 may be made of a conductive metal material, such as magnesium, aluminum, silver, and the like. Of course, the first capacitor plate 1341 and the second capacitor plate 1342 may be made of other materials, which is not limited herein.

In order to further improve the color-changing performance of the casing 100, in another alternative embodiment, the electricity storage layer 130 may further include a plurality of photoelectric conversion unit groups, each photoelectric conversion unit group includes a plurality of photoelectric conversion units 131, the plurality of photoelectric conversion unit groups are sequentially connected in series, and the photoelectric conversion units 131 in each photoelectric conversion unit group are sequentially connected in parallel. In this embodiment, the photoelectric conversion units 131 are more in number, so that a larger current can be generated, thereby improving the color change performance of the housing 100.

In the above embodiment, the photoelectric conversion unit 131 may be formed by coating the photoelectric conversion unit 131 on the following second substrate 135 by using a coating process, an exposure process, a development process, an etching process, and the like, and then coating a conductive wire on the second substrate 135, where the conductive wire can connect a plurality of photoelectric conversion units 131 to form a photoelectric conversion unit group in parallel, and then connect the plurality of photoelectric conversion unit groups in series. At this time, the conductive wires and the photoelectric conversion unit 131 are both of a plated film structure, so that the thickness thereof is extremely thin, and thus the conductive wires and the photoelectric conversion unit are not easily seen by a user, and the appearance performance of the housing 100 is improved.

A specific structure of the photoelectric conversion unit 131 is provided herein, but other structures are also possible, and the present disclosure is not limited thereto. Specifically, the photoelectric conversion unit 131 may be a Photodiode (PIN). The photoelectric conversion unit 131 may include a P-type semiconductor 1311, an N-type semiconductor 1312, and an amorphous silicon layer 1313, the P-type semiconductor 1311 and the N-type semiconductor 1312 being in conduction through the amorphous silicon layer 1313, the N-type semiconductor 1312 being in conduction with the positive electrode 132, and the P-type semiconductor 1311 being in conduction with the negative electrode 133. At this time, when ambient light is irradiated on the edges of the P-type semiconductor 1311 and the N-type semiconductor 1312, electron and hole pairs are generated near the P-type semiconductor 1311 and the N-type semiconductor 1312, and the electron and hole pairs are directionally moved under the action of the internal electric field of the P-type semiconductor 1311 and the N-type semiconductor 1312, so that a photocurrent is formed, wherein the edges of the N-type semiconductor 1312 are mostly electrons and thus positively charged, and the edges of the P-type semiconductor 1311 are mostly holes and thus negatively charged. The P-type semiconductor 1311 and the N-type semiconductor 1312 thus form a current path when the case 100 is in a light condition. The photoelectric conversion unit 131 having such a structure is simple in structure and easy to manufacture.

Alternatively, the amorphous silicon layer 1313 in the photoelectric conversion unit 131 is large in thickness, and the P-type semiconductor 1311 and the N-type semiconductor 1312 are small in thickness, so that the photoelectric conversion efficiency of the photoelectric conversion unit 131 can be improved.

Alternatively, the photoelectric conversion unit 131 may also be an Organic Photodiode (OPD). The photoelectric conversion unit 131 is not limited herein with respect to a specific type.

Since other light emitting components are present inside the electronic device, the amorphous silicon layer 1313 is irradiated with light from the light emitting components, which tends to decrease the photoelectric conversion efficiency of the photoelectric conversion unit 131. For this reason, in another optional embodiment, the electricity storage layer 130 may further include a second substrate 135 and a first light shielding layer 136, the second substrate 135 may be located between the photoelectric conversion unit 131 and the first substrate 110, the first light shielding layer 136 may be located between the second substrate 135 and the photoelectric conversion unit 131, and the first light shielding layer 136 may be used to cover the amorphous silicon layer 1313. In this embodiment, the first light shielding layer 136 may cover an internal light source of the electronic device, so that the amorphous silicon layer 1313 may be prevented from being irradiated by the internal light source of the electronic device, thereby improving the photoelectric conversion efficiency of the photoelectric conversion unit 131.

Alternatively, the second substrate 135 may be made of the same material as the first substrate 110, which is not described herein. The first light shielding layer 136 may be made of ink or other materials, and certainly, the first light shielding layer 136 may also be made of other light shielding materials, which is not limited herein.

In order to further improve the photoelectric conversion efficiency of the electronic photoelectric conversion unit 131, a second light shielding layer may be disposed on a side of the amorphous silicon layer 1313 away from the first light shielding layer 136, and the second light shielding layer may cover the side of the amorphous silicon layer 1313 facing the light, so as to improve the photoelectric conversion efficiency of the photoelectric conversion unit 131.

Optionally, the second light shielding layer may be made of a material such as ink, and of course, the second light shielding layer may also be made of another light shielding material, which is not limited herein.

Note that the second light-shielding layer can cover only the amorphous silicon layer 1313 and cannot cover the P-type semiconductor 1311 and the N-type semiconductor 1312.

The first substrate 110 and the second substrate 135 in the above embodiments may be the same component, that is, the photoelectric conversion unit 131, the first light shielding layer 136, and other structures in the storage layer 130 are directly disposed on the first substrate 110.

In another alternative embodiment, the electric storage layer 130 may further include an insulating buffer layer 137, the insulating buffer layer 137 may be located between the photoelectric conversion unit 131 and the second substrate 135, and the light shielding layer 136 may be embedded in the insulating buffer layer 137. In this embodiment, the photoelectric conversion unit 131 is disposed on the insulating buffer layer 137, so that the insulating buffer layer 137 is prevented from being in rigid contact with the second substrate 135, which may damage the photoelectric conversion unit 131, and thus, the safety and reliability of the photoelectric conversion unit 131 are improved.

In addition, the insulating buffer layer 137 can prevent the photoelectric conversion unit 131 from being short-circuited, thereby improving safety and reliability of the photoelectric conversion unit 131.

Alternatively, the insulating buffer layer 137 may be made of silicon dioxide or the like. Of course, the insulating buffer layer 137 may also adopt other components, and is not limited herein.

In order to further prevent the photoelectric conversion unit 131 from being damaged, in another alternative embodiment, the electric storage layer 130 may further include a first protection layer 138, the photoelectric conversion unit 131 may be located between the first protection layer 138 and the insulating buffer layer 137, and a portion of the amorphous silicon layer 1313 may be embedded in the first protection layer 138. In this embodiment, the first protection layer 138 covers the photoelectric conversion unit 131, so as to prevent the photoelectric conversion unit 131 from being scratched, thereby improving the safety of the photoelectric conversion unit 131. Alternatively, the first protection layer 138 may be made of a transparent material such as polyimide transparent film, resin, or plastic.

In another alternative embodiment, the casing 100 disclosed in this embodiment of the present application further includes a second protection layer 140, and the second protection layer 140 may be attached to a side of the electrochromic layer 120 facing away from the electrical storage layer 130. At this time, the second protection layer 140 covers the electrochromic layer 120, so as to prevent the electrochromic layer 120 and the electricity storage layer 130 from being scratched, thereby improving the safety and reliability of the electronic device. Alternatively, the second protection layer 140 may be made of a transparent material such as polyimide transparent film, resin, plastic, and the like.

In order to further improve the appearance of the casing 100, in another alternative embodiment, the electrochromic layer 120 may be a mixture of a plurality of electrochromic materials, so as to improve the color-changing performance of the electrochromic layer 120, further improving the appearance of the casing.

In another alternative embodiment, the casing 100 may include a front cover and a rear cover, the front cover may mount a display module of the electronic device, and the rear cover may be a battery cover of the electronic device, and both the front cover and the rear cover may change color at this time, so as to improve appearance performance of the electronic device.

Based on the casing 100 disclosed in the embodiments of the present application, an electronic device is also disclosed in the embodiments of the present application, and the disclosed electronic device includes the casing 100 described in any of the embodiments above.

The electronic device disclosed in the embodiment of the present application may be a smart phone, a tablet computer, an electronic book reader, a wearable device (e.g., a smart watch), an electronic game machine, and the like, and the specific kind of the electronic device is not limited in the embodiment of the present application.

While the present embodiments have been described with reference to the accompanying drawings, it is to be understood that the invention is not limited to the precise embodiments described above, which are meant to be illustrative and not restrictive, and that various changes may be made therein by those skilled in the art without departing from the spirit and scope of the invention as defined by the appended claims.