阅读说明：本技术 一种电机单相驱动模块和驱动电路 (Single-phase drive module and drive circuit of motor ) 是由 袁碧荷 严涛 邓林 王波 王俊奎 刘婧妮 于 2020-12-17 设计创作，主要内容包括：本发明属于机载电机驱动技术领域,公开了一种电机单相驱动模块和驱动电路。功率驱动选用耐高压和低阻抗的碳化硅场效应晶体管+驱动方案,使用内部的体二极管进行续流,减小恢复损耗。因碳化硅场效应晶体管器件开关速度高,工作时会产生关断过电压和开通过电流,采用放电阻止型RCD吸收电路吸收能量解决此问题。碳化硅场效应晶体管器件由于栅极电容较传统功率器件小,对负压耐受较弱,前置驱动设计了栅极保护电路。当开关管发生桥臂短路直通时,将三相驱动桥的6个碳化硅场效应晶体管开关管进行关断,将危害限制在控制器壳体内,避免事故扩大化。(The invention belongs to the technical field of airborne motor driving, and discloses a single-phase motor driving module and a single-phase motor driving circuit. The power driving adopts a high-voltage-resistant and low-impedance silicon carbide field effect transistor + driving scheme, and an internal body diode is used for follow current, so that the recovery loss is reduced. Because the silicon carbide field effect transistor device has high switching speed, overvoltage shutoff and overcurrent on can be generated during working, and the problem is solved by adopting a discharge prevention type RCD absorption circuit to absorb energy. The silicon carbide field effect transistor device has weaker negative pressure tolerance because the grid capacitance is smaller than that of the traditional power device, and a grid protection circuit is designed for the front-mounted drive. When the switching tubes are in short circuit and straight-through of bridge arms, 6 silicon carbide field effect transistor switching tubes of the three-phase drive bridge are turned off, damage is limited in the controller shell, and accident expansion is avoided.)

1. A motor single-phase driving module; the method is characterized in that: the motor single-phase driving module includes: a driving sub-circuit and an absorption sub-circuit;

the driving sub-circuit includes: a first silicon carbide field effect transistor and a second silicon carbide field effect transistor;

the source electrode of the first silicon carbide field effect transistor is connected with the drain electrode of the second silicon carbide field effect transistor and is connected with one phase winding of the motor;

the drain electrode of the first silicon carbide field effect transistor is connected with the positive electrode of the power supply, and the source electrode of the second silicon carbide field effect transistor is connected with the negative electrode of the power supply;

the grid electrodes of the first silicon carbide field effect transistor and the second silicon carbide field effect transistor are respectively connected with a driving signal;

the absorption sub-circuit includes: the capacitor comprises a first capacitor C1, a second capacitor C2, a third capacitor C3, a fourth capacitor C4, a first diode D1, a second diode D2, a first resistor R1, a second resistor R2, a third resistor R3 and a fourth resistor R4, and the connection relations are as follows:

the upper end of a first capacitor C1 is connected with the drain electrode of a first silicon carbide field effect transistor, the lower end of a first capacitor C1 is connected with the anode of a first diode D1, and a first capacitor C1 is connected with a second capacitor C2 in parallel; the cathode of the first diode D1 is connected with the source of the first silicon carbide field effect transistor;

the upper end of the first resistor R1 is connected with the anode of a first diode D1, the lower end of the first resistor R1 is connected with the source electrode of a second silicon carbide field effect transistor, and the second resistor R2 is connected with the first resistor R1 in parallel;

the lower end of the third capacitor C3 is connected with the source electrode of the second silicon carbide field effect transistor, the upper end of the third capacitor C3 is connected with the cathode of a second diode D2, the anode of the second diode D2 is connected with the drain electrode of the second silicon carbide field effect transistor, and the fourth capacitor C4 is connected with the C3 in parallel;

the lower end of the third resistor R3 is connected with the cathode of the second diode D2, the upper end of the third resistor R3 is connected with the drain of the first silicon carbide field effect transistor, and the fourth resistor R4 is connected with the third resistor R3 in parallel.

2. A motor single phase drive module according to claim 1; the method is characterized in that: the motor single-phase driving module further comprises a grid protection sub-circuit; each silicon carbide field effect transistor is provided with a grid protection sub-circuit;

the gate protection sub-circuit includes: a fifth resistor R5, a sixth resistor R6, a seventh resistor R7, a first voltage regulator diode DZ1, a second voltage regulator diode DZ2, a third voltage regulator diode DZ3, and a fifth capacitor C5, which are connected as follows:

the left end of the sixth resistor R6 is connected with a driving signal, and the right end of the sixth resistor R6 is connected with a silicon carbide field effect transistor grid; the right end of a fifth resistor R5 is connected with the right end of a sixth resistor R6, the left end of the fifth resistor R5 is connected with the anode of a third voltage-stabilizing diode DZ3, and the cathode of the third voltage-stabilizing diode DZ3 is connected with the left end of a sixth resistor R6;

the anode of the first zener diode DZ1 is connected to the anode of the second zener diode DZ 2; the cathode of the first voltage-stabilizing diode DZ1 is connected with the right end of the sixth resistor R6; the cathode of the second voltage stabilizing diode DZ2 is connected with the source electrode of the silicon carbide field effect transistor;

the upper end of the fifth capacitor C5 is connected with the gate of the silicon carbide field effect transistor, the lower end of the fifth capacitor C5 is connected with the upper end of the seventh resistor R7, and the lower end of the seventh resistor R7 is connected with the source of the silicon carbide field effect transistor.

3. A motor single phase drive module according to claim 2; the method is characterized in that: the source of the silicon carbide field effect transistor is also connected to signal ground.

4. A motor single phase drive module according to claim 3; the method is characterized in that: the gate protection sub-circuit further comprises a pull-down resistor R8, and two ends of the pull-down resistor R8 are respectively connected with the gate and the source of the silicon carbide field effect transistor.

5. A motor single phase drive module according to claim 4; the method is characterized in that: the single-phase motor driving module further comprises an overcurrent protection sub-circuit, and each silicon carbide field effect transistor is provided with one overcurrent protection sub-circuit;

the overcurrent protection sub-circuit includes: the connection relations of the third diode D3, the sixth capacitor C6, the ninth resistor R9, the fourth voltage stabilizing diode DZ4 and the fifth voltage stabilizing diode DZ5 are as follows:

the drain of the silicon carbide field effect transistor is connected with the cathode of a third diode D3, the anode of a third diode D3 is connected with the anode of a fourth voltage-stabilizing diode DZ4, the cathode of the fourth voltage-stabilizing diode DZ4 is connected with the right end of a ninth resistor R9, the left end of a fifth resistor R5 is connected with the cathode of a fifth voltage-stabilizing diode DZ5, the anode of the fifth voltage-stabilizing diode DZ5 is connected with the source of the silicon carbide field effect transistor, and a sixth capacitor C6 is connected with a fifth voltage-stabilizing diode DZ5 in parallel;

the cathode of the fifth voltage stabilizing diode DZ5 is connected with VCC; the overcurrent protection sub-circuit is used for detecting the current between the source electrode and the drain electrode of the silicon carbide field effect transistor.

6. A motor single phase drive module according to claim 5; the method is characterized in that: the overcurrent protection circuit further includes: the cathode of the sixth zener diode DZ6 and the cathode of the fifth zener diode DZ5 are connected to the anode of the sixth zener diode DZ6, and the cathode of the sixth zener diode DZ6 is connected to VCC.

7. A motor single phase drive module according to claim 6; the method is characterized in that: the overcurrent protection circuit further includes: driving a protection chip; and an overcurrent protection pin of the drive protection chip is connected with the cathode of a fifth voltage stabilizing diode DZ5, and the drive protection chip is used for cutting off a drive signal when the current between the source electrode and the drain electrode of the silicon carbide field effect transistor is overcurrent.

8. A motor drive circuit characterized by: the motor drive circuit includes: three motor single-phase drive modules according to any one of claims 1 to 7; the three motor single-phase driving modules are respectively connected with three-phase windings of the motor.

Technical Field

The invention belongs to the technical field of airborne motor driving, and particularly relates to a single-phase motor driving module and a single-phase motor driving circuit.

Background

With the advanced development of airborne motor drive controllers, multiple faults are converted from algorithm problems into hardware level defects, such as high-temperature failure of devices, limited device type functions, insufficient functional circuit design and the like. The motor power driving circuit has the highest complexity and is also a heat source caused by power loss. The power driving circuit of the motor driving controller in the existing aircraft electromechanical system generally adopts an integrated module scheme represented by IPM and a discrete device scheme, and uses power driving modes of Mosfet + driving and IGBT + driving based on the traditional Si-based material. The power drive has the problems of large switching loss, low efficiency and high temperature rise due to the self property of the traditional device, and the heat dissipation is usually realized by adopting air cooling, liquid cooling and other modes in a matching manner.

With the gradual increase of the power density requirement of the onboard motor driving controller, the onboard service environment is more severe, the traditional power driving device is often damaged due to the problems of over-temperature accelerated aging, low high voltage resistance, insufficient protection of a switching device and the like, the safe operation of the power driving device and peripheral devices is threatened, and the adverse effect on the electromagnetic compatibility of electromechanical products is generated in the operation process.

Disclosure of Invention

The purpose of the invention is as follows: the motor single-phase driving module and the driving circuit are provided, and the problem that a traditional power switch device on a motor is damaged due to large heat productivity, high temperature rise and hardware protection design defects when the traditional power switch device works is solved.

The technical scheme of the invention is as follows:

a motor single-phase driving module; the method comprises the following steps: a driving sub-circuit and an absorption sub-circuit;

the driving sub-circuit includes: a first silicon carbide field effect transistor and a second silicon carbide field effect transistor;

the source electrode of the first silicon carbide field effect transistor is connected with the drain electrode of the second silicon carbide field effect transistor and is connected with one phase winding of the motor;

the drain electrode of the first silicon carbide field effect transistor is connected with the positive electrode of the power supply, and the source electrode of the second silicon carbide field effect transistor is connected with the negative electrode of the power supply;

the grid electrodes of the first silicon carbide field effect transistor and the second silicon carbide field effect transistor are respectively connected with a driving signal;

the absorption sub-circuit connection relation is as follows:

the upper end of a first capacitor C1 is connected with the drain electrode of a first silicon carbide field effect transistor, the lower end of a first capacitor C1 is connected with the anode of a first diode D1, and a first capacitor C1 is connected with a second capacitor C2 in parallel; the cathode of the first diode D1 is connected with the source of the first silicon carbide field effect transistor;

the upper end of the first resistor R1 is connected with the anode of a first diode D1, the lower end of the first resistor R1 is connected with the source electrode of a second silicon carbide field effect transistor, and the second resistor R2 is connected with the first resistor R1 in parallel;

the lower end of the third capacitor C3 is connected with the source electrode of the second silicon carbide field effect transistor, the upper end of the third capacitor C3 is connected with the cathode of a second diode D2, the anode of the second diode D2 is connected with the drain electrode of the second silicon carbide field effect transistor, and the fourth capacitor C4 is connected with the C3 in parallel;

the lower end of the third resistor R3 is connected with the cathode of the second diode D2, the upper end of the third resistor R3 is connected with the drain of the first silicon carbide field effect transistor, and the fourth resistor R4 is connected with the third resistor R3 in parallel.

Further, the motor single-phase driving module further comprises a grid protection sub-circuit; each silicon carbide field effect transistor is provided with a grid protection sub-circuit;

the gate protection subcircuit connection relation is as follows:

the left end of the sixth resistor R6 is connected with a driving signal, and the right end of the sixth resistor R6 is connected with a silicon carbide field effect transistor grid; the right end of a fifth resistor R5 is connected with the right end of a sixth resistor R6, the left end of the fifth resistor R5 is connected with the anode of a third voltage-stabilizing diode DZ3, and the cathode of the third voltage-stabilizing diode DZ3 is connected with the left end of a sixth resistor R6;

the anode of the first zener diode DZ1 is connected to the anode of the second zener diode DZ 2; the cathode of the first voltage-stabilizing diode DZ1 is connected with the right end of the sixth resistor R6; the cathode of the second voltage stabilizing diode DZ2 is connected with the source electrode of the silicon carbide field effect transistor;

the upper end of the fifth capacitor C5 is connected with the gate of the silicon carbide field effect transistor, the lower end of the fifth capacitor C5 is connected with the upper end of the seventh resistor R7, and the lower end of the seventh resistor R7 is connected with the source of the silicon carbide field effect transistor.

Further, the source of the silicon carbide field effect transistor is also connected to signal ground. The positive and negative clamping diodes are used for eliminating the overshoot and interference which can exist in positive and negative voltages

Further, the gate protection sub-circuit further comprises a pull-down resistor R8, and two ends of the pull-down resistor R8 are respectively connected with the gate and the source of the silicon carbide field effect transistor. The pull-down resistor is added to prevent damage and gate impact caused by grid suspension, and improve anti-interference performance and reliability of the drive circuit

Furthermore, the single-phase motor driving module also comprises an overcurrent protection sub-circuit, and each silicon carbide field effect transistor is provided with one overcurrent protection sub-circuit;

the overcurrent protection subcircuit has the following connection relationship:

the drain of the silicon carbide field effect transistor is connected with the cathode of a third diode D3, the anode of a third diode D3 is connected with the anode of a fourth voltage-stabilizing diode DZ4, the cathode of the fourth voltage-stabilizing diode DZ4 is connected with the right end of a ninth resistor R9, the left end of a fifth resistor R5 is connected with the cathode of a fifth voltage-stabilizing diode DZ5, the anode of the fifth voltage-stabilizing diode DZ5 is connected with the source of the silicon carbide field effect transistor, and a sixth capacitor C6 is connected with a fifth voltage-stabilizing diode DZ5 in parallel;

the cathode of the fifth voltage-stabilizing diode DZ5 is connected with VCC; the overcurrent protection sub-circuit is used for detecting the current between the source electrode and the drain electrode of the silicon carbide field effect transistor.

Further, the overcurrent protection circuit further includes: the cathode of the fifth zener diode DZ5 is connected to the anode of the sixth zener diode DZ6, and the cathode of the sixth zener diode DZ6 is connected to VCC.

Further, the overcurrent protection circuit further includes: driving a protection chip; and an overcurrent protection pin of the drive protection chip is connected with the cathode of a fifth voltage stabilizing diode DZ5, and the drive protection chip is used for cutting off a drive signal when the current between the source electrode and the drain electrode of the silicon carbide field effect transistor is overcurrent. When the voltage of the overcurrent protection point rises to a preset value, the driving signal outputs a low level, and in order to improve that the detection circuit can quickly respond and turn off the output when the SiC is desaturated, a voltage regulator tube is connected in series with the short-circuit detection loop, so that the detection sensitivity is improved.

Further, three motor single-phase drive modules according to any one of claims 1 to 7; the three motor single-phase driving modules are respectively connected with three-phase windings of the motor.

The invention effectively improves the working efficiency of the motor driving controller of the electromechanical system, reduces the temperature rise, removes extra heat dissipation measures, realizes small-sized packaging, and improves the working reliability and the electromagnetic compatibility of the controller.

Drawings

FIG. 1 is a schematic diagram of a half-bridge of a silicon carbide field effect transistor based motor drive circuit;

FIG. 2 is a schematic diagram of an absorption sub-circuit;

FIG. 3 is a gate protection sub-circuit;

fig. 4 is an overcurrent protection circuit.

Detailed Description

The technical solution of the present invention will be clearly and completely described below with reference to the accompanying drawings, and all other embodiments obtained by those skilled in the art without any creative work belong to the protection scope of the present invention.

As shown in fig. 1, a motor single-phase driving module; the method comprises the following steps: a driving sub-circuit and an absorption sub-circuit; the power driving adopts a high-voltage-resistant and low-impedance silicon carbide field effect transistor + driving scheme, and an internal body diode is used for follow current, so that the recovery loss is reduced. Because the SiC field effect transistor SiC-Mosfet device has high switching speed, overvoltage switching-off and overcurrent switching-on can be generated during working, and the problem is solved by adopting a discharge prevention type RCD absorption circuit to absorb energy.

The driving sub-circuit includes: a first silicon carbide field effect transistor and a second silicon carbide field effect transistor; the source electrode of the first silicon carbide field effect transistor is connected with the drain electrode of the second silicon carbide field effect transistor and is connected with one phase winding of the motor; the drain electrode of the first silicon carbide field effect transistor is connected with the positive electrode of the power supply, and the source electrode of the second silicon carbide field effect transistor is connected with the negative electrode of the power supply; and the grid electrodes of the first silicon carbide field effect transistor and the second silicon carbide field effect transistor are respectively connected with a driving signal.

The power switching tube is switched on and off instantly theoretically, and in actual use, because the switching speed of the switching tube is very high, switching-off overvoltage can be generated on the distributed inductor during switching-off; when the freewheeling diode recovers blocking, the current will decrease to a negative value and then decay to zero, due to the reverse recovery characteristic, thereby generating a turn-on overcurrent in the turn-on device. The solution is to add a buffer circuit to absorb and restrain the abrupt voltage and current changes of the SiC FET device caused by high-speed switching, and to improve the electromagnetic compatibility of the inverter. Therefore, a discharge prevention type RCD absorption circuit is proposed, as shown in fig. 2, which achieves the purpose of energy absorption by adjusting the parameters of absorption capacitance and resistance. Meanwhile, the PCB design adopts the means of reducing stray inductance, such as copper paving, via hole increasing, linear connection and the like, so as to improve the phenomena.

The absorber sub-circuit connection relationship is as follows: the upper end of a first capacitor C1 is connected with the drain electrode of a first silicon carbide field effect transistor, the lower end of a first capacitor C1 is connected with the anode of a first diode D1, and a first capacitor C1 is connected with a second capacitor C2 in parallel; the cathode of the first diode D1 is connected with the source of the first silicon carbide field effect transistor; the upper end of the first resistor R1 is connected with the anode of a first diode D1, the lower end of the first resistor R1 is connected with the source electrode of a second silicon carbide field effect transistor, and the second resistor R2 is connected with the first resistor R1 in parallel; the lower end of the third capacitor C3 is connected with the source electrode of the second silicon carbide field effect transistor, the upper end of the third capacitor C3 is connected with the cathode of a second diode D2, the anode of the second diode D2 is connected with the drain electrode of the second silicon carbide field effect transistor, and the fourth capacitor C4 is connected with the C3 in parallel; the lower end of the third resistor R3 is connected with the cathode of the second diode D2, the upper end of the third resistor R3 is connected with the drain of the first silicon carbide field effect transistor, and the fourth resistor R4 is connected with the third resistor R3 in parallel.

The silicon carbide field effect transistor device has weaker negative pressure tolerance because the grid capacitance is smaller than that of the traditional power device, and a grid protection circuit is designed for the front-mounted drive. When the switching tubes are in short circuit and straight-through of bridge arms, 6 silicon carbide field effect transistor switching tubes of the three-phase drive bridge are turned off, damage is limited in the controller shell, and accident expansion is avoided.

The silicon carbide field effect transistor device has the advantages of high switching speed, low grid charge amount and sensitive grid, and the grid needs to be protected in design. The circuit is shown in fig. 3, and the positive clamping diode and the negative clamping diode are used for eliminating overshoot and interference which may exist in positive and negative voltages; and a pull-down resistor is added in the grid loop, so that damage and grid impact caused by grid suspension are prevented, and the anti-interference performance and the reliability of the driving circuit are improved.

The gate protection sub-circuit connection relationship is as follows: the left end of the sixth resistor R6 is connected with a driving signal, and the right end of the sixth resistor R6 is connected with a silicon carbide field effect transistor grid; the right end of a fifth resistor R5 is connected with the right end of a sixth resistor R6, the left end of the fifth resistor R5 is connected with the anode of a third voltage-stabilizing diode DZ3, and the cathode of the third voltage-stabilizing diode DZ3 is connected with the left end of a sixth resistor R6; the anode of the first zener diode DZ1 is connected to the anode of the second zener diode DZ 2; the cathode of the first voltage-stabilizing diode DZ1 is connected with the right end of the sixth resistor R6; the cathode of the second voltage stabilizing diode DZ2 is connected with the source electrode of the silicon carbide field effect transistor; the upper end of the fifth capacitor C5 is connected with the gate of the SiC FET, the lower end of the fifth capacitor C5 is connected with the upper end of the seventh resistor R7, and the lower end of the seventh resistor R7 is connected with the source of the SiC FET

To ensure that the silicon carbide fet devices are protected from short-circuit high currents, a desaturation protection circuit is designed, as shown in fig. 4. When the voltage of the overcurrent protection point rises to a preset value, the driving signal outputs a low level, and in order to improve that the detection circuit can quickly respond and turn off the output when the SiC is desaturated, a voltage regulator tube is connected in series with the short-circuit detection loop, so that the detection sensitivity is improved.

The overcurrent protection subcircuit has the following connection relationship: the drain of the silicon carbide field effect transistor is connected with the cathode of a third diode D3, the anode of a third diode D3 is connected with the anode of a fourth voltage-stabilizing diode DZ4, the cathode of the fourth voltage-stabilizing diode DZ4 is connected with the right end of a ninth resistor R9, the left end of a fifth resistor R5 is connected with the cathode of a fifth voltage-stabilizing diode DZ5, the anode of the fifth voltage-stabilizing diode DZ5 is connected with the source of the silicon carbide field effect transistor, and a sixth capacitor C6 is connected with a fifth voltage-stabilizing diode DZ5 in parallel; the cathode of the fifth voltage-stabilizing diode DZ5 is connected with VCC; the overcurrent protection sub-circuit is used for detecting the current between the source electrode and the drain electrode of the silicon carbide field effect transistor.