阅读说明：本技术 一种高信噪比的芯片以及含有该芯片的设备 (Chip with high signal-to-noise ratio and equipment comprising chip ) 是由 赖秉豊 于 2021-06-22 设计创作，主要内容包括：本发明涉及一种高信噪比的芯片以及含有该芯片的设备,所述芯片包含滤除杂讯层和电路层,所述滤除杂讯层用于吸收杂讯,所述滤除杂讯层包含从左到右依次间隙设置的干扰杂讯吸收件、杂讯余波降频件、低频杂讯吸收件,定义所述芯片的时脉的频率为f,L＝c/f,其中c为光速；所述滤除杂讯层的接地端和所述电路层的接地端相连；所述干扰杂讯吸收件的长度为0.125L-1.25L且不为(0.125*N)L,其中N为1-8的整数；所述杂讯余波降频件包含杂讯余波耦合部和杂讯余波消耗部。(The invention relates to a chip with high signal-to-noise ratio and equipment comprising the chip, wherein the chip comprises a noise filtering layer and a circuit layer, the noise filtering layer is used for absorbing noise, the noise filtering layer comprises an interference noise absorbing piece, a noise residual wave frequency reducing piece and a low-frequency noise absorbing piece which are sequentially arranged from left to right at intervals, the frequency of a clock pulse of the chip is defined as f, L is c/f, and c is the speed of light; the grounding end of the noise filtering layer is connected with the grounding end of the circuit layer; the length of the interference noise absorption piece is 0.125L-1.25L and is not (0.125N) L, wherein N is an integer of 1-8; the said noise-residual wave down-converter includes a noise-residual wave coupling portion and a noise-residual wave consuming portion.)

1. The utility model provides a chip of high signal-to-noise ratio, the chip contains filtering noise layer and circuit layer, filtering noise layer is used for absorbing the noise, filtering noise layer contains interference noise absorbing piece, noise afterwave frequency reduction piece, the low frequency noise absorbing piece that from left to right set gradually the clearance, its characterized in that:

defining the frequency of a clock pulse of the chip as f, and defining L as c/f, wherein c is the speed of light;

the grounding end of the noise filtering layer is connected with the grounding end of the circuit layer;

the length of the interference noise absorbing piece is 0.125L-1.25L and is not (0.125 x N) L, wherein N is an integer of 1-8 and is used for absorbing noise outside a clock, and the interference noise absorbing piece is used for consuming part of the interference noise and obtaining a noise residual wave;

the noise residual wave frequency reducing piece comprises a noise residual wave coupling part and a noise residual wave consumption part, the noise residual wave coupling part is arranged on one side of the interference noise absorption piece in a coupling mode, the length of the noise residual wave coupling part is the same as that of the interference noise absorption piece, the length of the noise residual wave consumption part is larger than that of the interference noise absorption piece, the bottom ends of the noise residual wave coupling part and the noise residual wave consumption part are electrically connected through a connecting piece, and the noise residual wave frequency reducing piece is used for coupling the noise residual wave and reducing the frequency of the noise residual wave to obtain low-frequency noise;

the length of the low frequency noise absorption member is the same as the length of the noise residual wave consumption part, and the noise residual wave absorption member is used for coupling the low frequency noise and consuming the low frequency noise.

2. A chip with high signal-to-noise ratio according to claim 1, wherein: the length of the noise residual wave consumption part is 0.375L-1.625L and is not (0.125M) L, wherein M is an integer of 3-8.

3. A chip with high signal-to-noise ratio according to claim 1, wherein: the interference noise absorption piece, the noise residual wave frequency reduction piece and the low-frequency noise absorption piece are of a plurality of layers of superposed structures, and each layer comprises a conducting strip and a boron nitride strip which are arranged in an inserting mode.

4. A chip with high signal-to-noise ratio according to claim 3, wherein: the conducting strip is one of a graphene substrate or a carbon substrate.

5. A chip with high signal-to-noise ratio according to claim 3, wherein: the length direction of the interference noise absorption piece, the length direction of the noise residual wave frequency reduction piece and the length direction of the low-frequency noise absorption piece are arranged in parallel.

6. A chip with high SNR according to claim 5, wherein: the boron nitride sheet is perpendicular to the length direction.

7. A chip with high signal-to-noise ratio according to claim 3, wherein: the interference noise absorption piece and the low-frequency noise absorption piece are respectively provided with a grounding end at the bottom end.

8. An electronic device, characterized in that: comprising the chip of claim 1.

Technical Field

The invention relates to the field of clutter filtering, in particular to a chip with high signal-to-noise ratio and equipment containing the chip.

Background

In the process of transmitting signals by an electronic device or electronic system, irregular extra signals which do not exist in original signals generated after passing through the device are called clutter. The clutter can cause signal distortion, and especially, the air is filled with various clutter, so that useless signals can be introduced in the signal transmission process, and the signal-to-noise ratio of signal transmission is influenced.

The device for filtering the clutter is generally realized by a filter, however, in the process of filtering the clutter by the filter, signals in a passband have energy loss, and a load effect is relatively obvious, so that the signal transmission efficiency is reduced, and the performance of electronic equipment is affected.

The present invention is directed to a chip with high signal-to-noise ratio and a device containing the chip.

Disclosure of Invention

In view of the problems in the prior art, the present invention provides a chip with a high snr and a device including the chip, which can effectively solve the problems in the prior art.

The technical scheme of the invention is as follows:

a chip with high signal-to-noise ratio comprises a noise filtering layer and a circuit layer, wherein the noise filtering layer is used for absorbing noise and comprises an interference noise absorbing piece, a noise residual wave frequency reducing piece and a low-frequency noise absorbing piece which are sequentially arranged from left to right at intervals,

defining the frequency of a clock pulse of the chip as f, and defining L as c/f, wherein c is the speed of light;

the grounding end of the noise filtering layer is connected with the grounding end of the circuit layer;

the length of the interference noise absorbing piece is 0.125L-1.25L and is not (0.125 x N) L, wherein N is an integer of 1-8 and is used for absorbing noise outside a clock, and the interference noise absorbing piece is used for consuming part of the interference noise and obtaining a noise residual wave;

the noise residual wave frequency reducing piece comprises a noise residual wave coupling part and a noise residual wave consumption part, the noise residual wave coupling part is arranged on one side of the interference noise absorption piece in a coupling mode, the length of the noise residual wave coupling part is the same as that of the interference noise absorption piece, the length of the noise residual wave consumption part is larger than that of the interference noise absorption piece, the bottom ends of the noise residual wave coupling part and the noise residual wave consumption part are electrically connected through a connecting piece, and the noise residual wave frequency reducing piece is used for coupling the noise residual wave and reducing the frequency of the noise residual wave to obtain low-frequency noise;

the length of the low frequency noise absorption member is the same as the length of the noise residual wave consumption part, and the noise residual wave absorption member is used for coupling the low frequency noise and consuming the low frequency noise.

Further, the length of the noise residual wave consumption part is 0.375L-1.625L and is not (0.125M) L, wherein M is an integer of 3-8.

Furthermore, the interference noise absorption piece, the noise residual wave frequency reduction piece and the low-frequency noise absorption piece are of a stacked structure, and each layer comprises a conductive sheet and a boron nitride sheet which are arranged in an inserting mode.

Further, the conductive sheet is one of a graphene substrate and a carbon substrate.

Furthermore, the length direction of the interference noise absorption piece, the length direction of the noise residual wave frequency reduction piece and the length direction of the low-frequency noise absorption piece are arranged in parallel.

Further, the boron nitride sheet is perpendicular to the length direction.

Furthermore, the bottom ends of the interference noise absorption piece and the low-frequency noise absorption piece are respectively provided with a grounding end.

Further provided is an electronic device comprising the chip.

Accordingly, the present invention provides the following effects and/or advantages:

the interference noise absorption piece has the minimum impedance to noise through the matching of the interference noise absorption piece, the noise residual wave frequency reduction piece and the low-frequency noise absorption piece and the specific length relation of the interference noise absorption piece, noise except a set working signal can be coupled, consumed, reduced in frequency and consumed again, the noise is converted into heat energy to be emitted to the outside, and therefore the signal-to-noise ratio of the communication equipment is greatly improved.

When the noise exceeds the absorption instantaneous upper limit of the interference noise absorption piece, the redundant noise residual wave is coupled to the noise residual wave coupling part, the noise residual wave at the moment is generally a sudden wave, namely an interference wave with larger change, because the noise residual wave coupling part is electrically connected with the bottom end of the noise residual wave consumption part, the noise residual wave is transmitted from the noise residual wave coupling part to the noise residual wave consumption part, through the length relation that the length of the noise residual wave consumption part is larger than that of the interference noise absorption piece, the frequency of the noise residual wave is reduced in the transmission process, the wavelength of the noise residual wave is increased, and the noise residual wave is converted into low-frequency noise.

After the interference noise passes through the interference noise absorption piece, the noise residual wave frequency reducing piece and the low-frequency noise absorption piece, most of the interference noise is absorbed and consumed, the rest high-frequency noise which cannot be absorbed and consumed once is released through the low-frequency noise absorption piece and continues to be coupled by the interference noise absorption piece, then the interference noise is reduced by the noise residual wave frequency reducing piece, finally the interference noise is reduced by the low-frequency noise absorption piece again, and the steps are circulated for multiple times so as to be gradually absorbed and consumed. Through multiple cycles of frequency reduction and absorption, noise can be effectively reduced, and signal quality is improved.

The structure of the invention is a structure with a plurality of layers of superposed layers, a conducting strip array of each layer can be carved by a photoetching process, then boron nitride powder is filled in the conducting strip array and solidified to form conducting strips and boron nitride sheets which are arranged in an inserting way, the conducting strips of graphene have good conductivity and a hexagonal structure, boron nitride has dielectric property and can be erected under static electricity like graphene, the groove joint insulation after the graphene is erected is applied by the characteristic, the graphene vertical sheets generate the characteristic of consuming interference noise, the structure of the graphene conducting strips is layered, a magnetic field consuming the interference noise is generated, the magnetic field and the interference noise form shearing force in the magnetic field direction in the air, the interference noise is damaged, and the performance of the chip is improved. Due to the filtering of the noise, the high level signal output by the chip is very close to VDD, so that the subsequent reading of the pulse signal output by the chip is facilitated.

It is to be understood that both the foregoing general description and the following detailed description of the present invention are exemplary and explanatory and are intended to provide further explanation of the invention as claimed.

Drawings

Fig. 1 is a schematic structural diagram of a noise filtering layer according to an embodiment.

Fig. 2 is a sectional view a-a of fig. 1.

Fig. 3 is a sectional view B-B of fig. 1.

Fig. 4 is a router provided with the chip.

Fig. 5 is test data for comparative example 1.

Fig. 6-10 are test data for comparative example 2.

Detailed Description

To facilitate understanding of those skilled in the art, the structure of the present invention will now be described in further detail by way of examples in conjunction with the accompanying drawings:

example one

Referring to fig. 1-3, a chip with high signal-to-noise ratio, the chip comprises a noise filtering layer and a circuit layer, the noise filtering layer is used for absorbing noise, the noise filtering layer comprises an interference noise absorbing piece 1, a noise residual wave frequency reducing piece 2 and a low-frequency noise absorbing piece 3 which are sequentially arranged from left to right, wherein the circuit layer is provided by corresponding manufacturers and is the prior art.

Defining the frequency of a clock pulse of the chip as f, and defining L as c/f, wherein c is the speed of light;

in this embodiment, the working signal may refer to a processor working signal or a communication signal of a communication device, and the communication device may be, for example, a mobile phone, a wireless router, or the like. In this embodiment, the chip may be a communication chip integrated with a baseband or a processing chip with computing power. In this embodiment, the circuit layer is a NETGEAR 3100300 mbps (bcm) wireless network card, the frequency f of the clock is 2400Mhz, L is 0.125 m, and the circuit layer and the noise filtering layer are integrated in the chip by a photolithography process. The grounding end of the noise filtering layer is connected with the grounding end of the circuit layer.

The length of the interference noise absorption piece 1 is 0.125L-1.25L and not (0.125 x N) L, where N is an integer from 1 to 8, in this embodiment, the length of the interference noise absorption piece 1 is 0.128L-0.016 m, and is used for absorbing noise except for a clock, and the interference noise absorption piece 1 is used for consuming part of the interference noise and obtaining a noise residual wave; the working signal with the interference noise is signal-coupled by the interference noise absorption piece 1, the interference noise absorption piece 1 has the smallest impedance to the noise and is easy to be coupled by the interference noise absorption piece 1, the noise is separated by the interference noise absorption piece 1 and preferentially passes through the interference noise absorption piece 1, and most of the noise is absorbed by the interference noise absorption piece 1.

The noise-residual frequency-reducing component 2 comprises a noise-residual coupling portion 201 and a noise-residual consumption portion 202, the noise residual wave coupling portion 201 is coupled to one side of the interference noise absorbing member 1, the length of the noise residual wave coupling portion 201 is the same as the length of the interference noise absorbing member 1, the length of the noise residual wave consuming part 202 is longer than the length of the interference noise absorbing member 1, the length of the noise residual wave consumption part 202 is 0.375L-1.625L and is not (0.125M) L, wherein M is an integer of 3-8, in this embodiment, the length of the noise residual wave consumption part 202 is 0.376L-0.047M, the bottom ends of the noise residual wave coupling portion 201 and the noise residual wave consuming portion 202 are electrically connected through a connecting member 5, the noise residual wave frequency demultiplier 2 is used for coupling the noise residual wave and reducing the frequency of the noise residual wave to obtain low-frequency noise. When the noise exceeds the absorption transient upper limit of the interference noise absorption piece 1, the redundant noise residual wave is coupled to the noise residual wave coupling portion 201, the noise residual wave at this time is generally a surge wave, i.e. an interference waveform with a large change, because the noise residual wave coupling portion 201 is electrically connected with the bottom end of the noise residual wave consuming portion 202, the noise residual wave is transmitted from the noise residual wave coupling portion 201 to the noise residual wave consuming portion 202, through the length relationship that the length of the noise residual wave consuming portion 202 is greater than the length of the interference noise absorption piece 1, the frequency of the noise residual wave is reduced in the transmission process, the wavelength of the noise residual wave is increased, and the noise residual wave is converted into low-frequency noise.

The length of the low frequency noise absorbing member 3 is the same as the length of the noise residual wave consuming part 202, and the noise residual wave absorbing member 3 is used for coupling the low frequency noise and consuming the low frequency noise. The low frequency noise absorbing member 3 operates in a similar manner to the disturbing noise absorbing member 1 except that it is used to consume low frequency noise of a larger wavelength.

After the interference noise passes through the interference noise absorption piece 1, the noise residual wave frequency reducing piece 2 and the low-frequency noise absorption piece 3, most of the interference noise is absorbed and consumed, the rest high-frequency noise which cannot be absorbed and consumed once is released through the low-frequency noise absorption piece 3 and continues to be coupled by the interference noise absorption piece 1, then the interference noise is reduced by the noise residual wave frequency reducing piece 2, and finally the interference noise is reduced by the low-frequency noise absorption piece 3 again, and the steps are circulated for multiple times so as to be wandered and gradually absorbed and consumed.

Furthermore, the interference noise absorption piece, the noise residual wave frequency reduction piece and the low-frequency noise absorption piece are of a stacked structure, and each layer is provided with the conducting strips and the boron nitride strips in an inserting mode. The length direction of the interference noise absorption piece, the length direction of the noise residual wave frequency reduction piece and the length direction of the low-frequency noise absorption piece are arranged in parallel, and the boron nitride piece is perpendicular to the length direction. Further, the conductive sheet is one of a graphene substrate and a carbon substrate. In this embodiment, the conductive sheet is graphene. Because the direction of noise is not fixed, a plurality of layers of stacked structures can extend out of a three-dimensional structure, the conducting sheet of the graphene has good conductivity and a hexagonal structure, boron nitride has dielectric property and can be erected under static electricity like the graphene, the characteristic is applied to groove joint filling insulation after the graphene is erected, the graphene vertical sheet generates the characteristic of consuming interference noise, the structure of the graphene conducting sheet is layered, a magnetic field consuming the interference noise is generated, the magnetic field and the magnetic field direction of the interference noise in the air form shearing force to damage the interference noise, the electromagnetic signal except a working signal is coupled and converted into static electricity through corresponding length setting, and the static electricity is continuously consumed through the dielectric property of the boron nitride to be converted into heat energy and is emitted to the periphery. Noise under a large amount of switching effects in the chip is eliminated, and accuracy of the VDD voltage is guaranteed.

Furthermore, the bottom ends of the interference noise absorption piece 1 and the low-frequency noise absorption piece 3 are both provided with grounding ends.

Example two

The present embodiment is basically the same as the first embodiment, in which the circuit layer is a NETGEAR 3100300 mbps (bcm) wireless network card, the clock f is 2400Mhz, and L is 0.125 m, except that:

the length of the interference noise absorption piece 1 is 0.628L which is 0.0785 m; the length of the noise residual wave consumption part 202 is 0.0975 m, which is 0.78L.

EXAMPLE III

The present embodiment is basically the same as the first embodiment, in which the circuit layer is a NETGEAR 3100300 mbps (bcm) wireless network card, the clock f is 2400Mhz, and L is 0.125 m, except that:

the length of the interference noise absorption piece 1 is 1.2L-0.15 m; the length of the noise residual wave consumption part 202 is 1.56L ═ 0.195 m.

Example four

This embodiment is substantially the same as the first embodiment, except that: in this embodiment, the circuit layer is a 4G-standard mobile phone processor, the clock f is 1880MHz, L is 0.15957 meters, and the length of the interference noise absorbing member 1 is 0.126L is 0.020 meters; the length of the noise residual wave consumption part 202 is 0.376L, which is 0.060 m.

EXAMPLE five

This embodiment is basically the same as the fourth embodiment, in which the circuit layer is a 4G-standard mobile phone processor, the clock f is 1880MHz, and L is 0.15957 meters, except that: the length of the interference noise absorption piece 1 is 0.628L which is 0.100 m; the length of the noise residual wave consumption part 202 is 0.78L-0.124 m.

EXAMPLE six

This embodiment is basically the same as the fourth embodiment, in which the circuit layer is a 4G-standard mobile phone processor, the clock f is 1880MHz, and L is 0.15957 meters, except that: the length of the interference noise absorption piece 1 is 1.2L-0.191 m; the length of the noise residual wave consumption part 202 is 1.56L-0.249 m.

EXAMPLE seven

An electronic device comprising the chip according to the first embodiment is connected to a ground terminal of the electronic device.

Experimental data

Comparative example 1

The fihn FIR302B router is adopted, the chips of the router are the chips of the first embodiment, the second embodiment and the third embodiment, and compared with the router which does not access the chips through multiple experiments, the circuit layers (network cards) of the two groups of routers are completely the same. The router accessing the chip is shown in fig. 4. The experimental environment is that the router is connected with a notebook computer of the same model, the distance between the notebook computer and the router is 20m, two walls exist between the notebook computer and the router for signal interference, and the thickness of each wall is 25 cm.

Referring to fig. 5, after the chips of the router are respectively connected to the chips of the first embodiment, the second embodiment and the third embodiment, the connection rate between the router and the notebook computer is greatly improved, the connection rate of the router without the chip in the environment is only 11Mbps, and the connection rate of the router with the chip is improved to 76-81 Mbps. From experimental data, it can be seen that the chips prepared according to the data provided in example two have better results. The interference of the noise greatly increases the error rate in the communication process, and in the transmission process of the obstacle (wall), the circuits of communication amplification, radio frequency and the like can amplify the interference noise, so that the information received by the notebook computer has error codes. The interference noise existing before the signal is transmitted is consumed by the chip, and the communication equipment can transmit information with higher signal-to-noise ratio.

Comparative example 2

The chip of example two was accessed using the red cell phone K40 pro, and the circuit layer of the chip was a CellON 888 processor, and multiple experimental comparisons were made with the red cell phone K40 pro that did not access the chip.

The two mobile phones are subjected to comparison experiments at different places in the city of mansion in Fujian province, and the download rate of the mobile phones is tested by adopting speedtest. Referring to fig. 6 to 8, the left side of the drawing is the test data of the mobile phone without the chip, and the right side is the test data of the mobile phone with the chip, which shows that the download rate of the mobile phone with the chip is increased. The 4G and 5G have high power density, are difficult to pass through the wall, and need multi-signal composition, so the base station can return the mark signal code from the mobile terminal when allocating the bandwidth, and because the noise interference is reduced, the mark signal is closer to the maximum bandwidth, and the effect of faster download speed is generated.

Two mobile phones were placed in the same environment, and the cpu was run and divided by the rabbit. As shown in fig. 9-10, the run of the red rice cell phone K40 pro with the chip was 77.88 ten thousand, while the run of the red rice cell phone K40 pro without the chip was 70.43 ten thousand, and the run of other cell phones without the chip and with the same cpu, such as black shark 4pro, red magic 6, etc., was lower than the run of the red rice cell phone K40 pro with the chip, it can be seen that the cpu performance of the cell phones with the chip is improved.

On the chip, the chip process is refined, so that the internal circuit becomes thin and is easily interfered by noise burst, and the VDD generates voltage drift. In the embodiment, the chip with the noise filtering layer is arranged, the high level sent by the chip is closer to VDD, and the low level sent by the chip is closer to 0, so that the receiving circuit receiving the level of the chip receives fewer error codes, the situation that the chip needs to resend the signal because the signal cannot be identified after the error code interference is reduced, and the performance is improved.

The above description is only a preferred embodiment of the present invention, and all equivalent changes and modifications made in accordance with the claims of the present invention should be covered by the present invention.