阅读说明：本技术 一种用于体温监测的高稳定性的温度传感器及其制备方法 (High-stability temperature sensor for body temperature monitoring and preparation method thereof ) 是由 范惠东 杨根杰 潘博闻 于军胜 于 2020-12-09 设计创作，主要内容包括：本发明公开了一种用于体温监测的高稳定性的温度传感器及其制备方法,属于本发明涉及温度传感器领域,有机半导体层引入一定量的大豆异黄酮以及二丁基羟基甲苯之后,利用大豆异黄酮以及二丁基羟基甲苯对油脂的抗氧化性和疏水性,器件的寿命得到了显著的提高,增强了其稳定性；与现有的封装之后的晶体管类型的皮肤传感器相比,由于大豆异黄酮以及二丁基羟基甲苯的引入,使得器件免于二次封装,有效的降低了晶体管器件的厚度,实现了传感器的微型化；在有机半导体层引入二丁基羟基甲苯之后,有效的改变了有机半导体层薄膜的形貌,减少了有机半导体层的缺陷态密度。(The invention discloses a high-stability temperature sensor for body temperature monitoring and a preparation method thereof, belonging to the field of temperature sensors.A certain amount of soybean isoflavone and dibutyl hydroxy toluene are introduced into an organic semiconductor layer, and then the oxidation resistance and hydrophobicity of the soybean isoflavone and dibutyl hydroxy toluene to grease are utilized, so that the service life of a device is obviously prolonged, and the stability of the device is enhanced; compared with the existing packaged transistor type skin sensor, due to the introduction of the soybean isoflavone and the dibutyl hydroxy toluene, the device is free from secondary packaging, the thickness of the transistor device is effectively reduced, and the miniaturization of the sensor is realized; after the dibutyl hydroxy toluene is introduced into the organic semiconductor layer, the appearance of the organic semiconductor layer film is effectively changed, and the defect state density of the organic semiconductor layer is reduced.)

1. A high stability temperature sensor for body temperature monitoring, characterized by: the structure of the organic light emitting diode comprises a substrate, a gate electrode, a gate insulating layer and an organic semiconductor layer which are sequentially arranged from bottom to top, wherein an active electrode and a drain electrode are arranged on the organic semiconductor layer, the organic semiconductor layer is soluble, and soybean isoflavone with the mass fraction of 1-3% and dibutyl hydroxy toluene with the mass fraction of 0.2-0.5% are added into the organic semiconductor layer.

2. A highly stable temperature sensor for body temperature monitoring according to claim 1, wherein: the substrate is made of a silicon wafer, glass, a polymer film or a metal foil.

3. A highly stable temperature sensor for body temperature monitoring according to claim 1, wherein: the gate insulating layer is made of one or more inorganic insulating materials of silicon dioxide, aluminum oxide, silicon nitride and titanium dioxide or one or more organic polymer insulating materials of polyvinyl alcohol, polyimide, polystyrene, polymethyl methacrylate and polyethylene, and the thickness of the gate insulating layer is 20-520 nm.

4. A highly stable temperature sensor for body temperature monitoring according to claim 1, wherein: the organic semiconductor layer is made of one or more soluble organic semiconductor materials of poly-3-hexylthiophene and Tips-pentacene, and the thickness of the organic semiconductor layer is 25-400 nm.

5. A highly stable temperature sensor for body temperature monitoring according to claim 1, wherein: the semiconductor layer is added with 1-3% of soybean isoflavone and 0.2-0.5% of dibutyl hydroxy toluene by mass.

6. A highly stable temperature sensor for body temperature monitoring according to claim 1, wherein: the gate electrode, the source electrode and the drain electrode are one or more of gold, silver and copper, or one or more of indium tin oxide and zinc oxide transparent conductive films, and the thickness is 10-100 nm.

7. A preparation method of a high-stability temperature sensor for body temperature monitoring is characterized by comprising the following steps: the method comprises the following steps:

s1: firstly, thoroughly cleaning a substrate by using a detergent, an acetone solution, deionized water and an isopropanol solution, and drying after cleaning;

s2: preparing a gate electrode on the surface of the substrate to form a pattern of the gate electrode;

s3: preparing a gate insulating layer on the substrate plated with the gate electrode;

s4: mixing soybean isoflavone and dibutyl hydroxy toluene with organic semiconductor solution, forming gate electrode,

preparing a gelatin-organic semiconductor layer on the substrate covered with the gate insulating layer, and performing thermal annealing at 70 ℃ for 20 minutes;

s5: preparing a source electrode and a leakage level on the organic semiconductor layer;

s6: and packaging the organic field effect transistor prepared in the step S5.

8. The method for preparing a high-stability temperature sensor for monitoring body temperature according to claim 7, wherein the method comprises the following steps: in the steps S2 and S5, the gate electrode, the source electrode, and the drain electrode are prepared by one of vacuum thermal evaporation, magnetron sputtering, plasma enhanced chemical vapor deposition, screen printing, and spin coating.

9. The method for preparing a high-stability temperature sensor for monitoring body temperature according to claim 7, wherein the method comprises the following steps: in step S3, the gate insulating layer is prepared by one of plasma enhanced chemical vapor deposition, thermal oxidation, spin coating, or vacuum evaporation.

10. The method for preparing a high-stability temperature sensor for monitoring body temperature according to claim 7, wherein the method comprises the following steps: in the step S4, the gelatin-organic semiconductor layer is prepared by one of plasma enhanced chemical vapor deposition, thermal oxidation, spin coating, vacuum evaporation, roll coating, film dropping, stamping, printing or air spraying.

Technical Field

The invention relates to the field of temperature sensors, in particular to a high-stability temperature sensor for body temperature monitoring and a preparation method thereof, and belongs to the technical field of electronic components.

Background

The human body is a very precise system, the stable body temperature has very important significance for maintaining the activity of various enzymes in the human body, and the internal environment of the human body is greatly changed due to the over-low temperature, so that the human body is in an abnormal state and can cause irreversible damage to the human body.

Healthy individuals can automatically adjust the body temperature, keep the temperature relatively stable by generating heat or radiating heat, while sub-healthy or sick individuals cannot keep the normal body temperature due to abnormal body conditions. Therefore, by detecting the body temperature, we can understand the health condition of themselves. The sensors used for body temperature monitoring at present are mostly traditional mercury thermometers based on physical phenomena of expansion and contraction, or more advanced thermistors and infrared temperature sensors. Among them, the mercury thermometer is cheap, but needs a long measuring time, and cannot be monitored in real time, and the thermistor and the infrared temperature sensor are expensive. Therefore, a new generation of miniaturized and intelligent temperature sensor becomes a hot spot of current research, and has the advantages of accurate and rapid body temperature measurement, cost reduction as far as possible and long service life.

Disclosure of Invention

The invention aims to: the invention provides a high-stability temperature sensor for body temperature monitoring and a preparation method thereof, aiming at solving the problems in the prior art, the invention provides the high-stability temperature sensor for body temperature monitoring and the preparation method thereof, the invention utilizes the oxidation resistance and the hydrophobicity of soybean isoflavone and dibutyl hydroxy toluene to grease to increase the long-term use stability of a transistor device by adding the soybean isoflavone and the dibutyl hydroxy toluene, so that the temperature sensor clung to the skin is prevented from being corroded by grease, sweat and water and oxygen components in the air secreted by the skin and the transistor device, meanwhile, the introduction of the dibutyl hydroxy toluene effectively changes the appearance of an organic semiconductor layer film, reduces the defect state density of an organic semiconductor layer, and ensures that the concentration of a carrier is more sensitive to the change of temperature, the accurate monitoring of the organic field effect transistor temperature sensor on the body temperature is realized. The invention solves the problems caused by high device cost, poor device service life and low sensitivity in the existing temperature sensor detection technology for body temperature monitoring.

The technical scheme adopted by the invention is as follows:

a high-stability temperature sensor for monitoring body temperature structurally comprises a substrate, a gate electrode, a gate insulating layer and an organic semiconductor layer which are sequentially arranged from bottom to top, wherein a source electrode and a drain electrode are arranged on the organic semiconductor layer, the organic semiconductor layer is soluble, and soybean isoflavone with the mass fraction of 1% -3% and dibutyl hydroxy toluene with the mass fraction of 0.2% -0.5% are added into the organic semiconductor layer.

Preferably, the substrate is made of a silicon wafer, glass, a polymer film, or a metal foil.

Preferably, the gate insulating layer is silicon dioxide (SiO)₂) Aluminum oxide (Al)₂O₃) Silicon nitride (Si)₃N₄) Titanium dioxide (TiO)₂) The gate insulating layer is made of one or more inorganic insulating materials or one or more organic polymer insulating materials of polyvinyl alcohol (PVA), Polyimide (PI), Polystyrene (PS), polymethyl methacrylate (PMMA) and Polyethylene (PE), and the thickness of the gate insulating layer is 20-520 nm.

Preferably, the organic semiconductor layer is one or more soluble organic semiconductor materials of poly-3-hexylthiophene (P3HT) and Tips-Pentacene (Tips-Pentacene), and the thickness is 25-400 nm.

Preferably, the semiconductor layer is added with 1 to 3 mass percent of soybean isoflavone and 0.2 to 0.5 mass percent of dibutyl hydroxy toluene.

Preferably, the gate electrode, the source electrode and the drain electrode are one or more of gold, silver and copper, or one or more of indium tin oxide and zinc oxide transparent conductive films, and the thickness is 10-100 nm.

A highly stable temperature sensor for body temperature monitoring, comprising the steps of:

s1: firstly, thoroughly cleaning a substrate by using a detergent, an acetone solution, deionized water and an isopropanol solution, and drying after cleaning;

s2, preparing a gate electrode on the surface of the substrate to form a pattern of the gate electrode;

s3, preparing a gate insulating layer on the substrate plated with the gate electrode;

s4, mixing soybean isoflavone and dibutyl hydroxy toluene with organic semiconductor solution, preparing gelatin-organic semiconductor layer on the substrate with the gate electrode and the gate insulating layer, and annealing at 70 deg.C for 20 min;

s5, preparing a source electrode and a leakage level on the organic semiconductor layer; (ii) a

And S6, packaging the organic field effect transistor prepared in the step S5.

Preferably, in steps S2 and S5, the gate electrode, the source electrode and the drain electrode are prepared by one of vacuum thermal evaporation, magnetron sputtering, plasma enhanced chemical vapor deposition, screen printing, printing or spin coating.

Preferably, in step S3, the gate insulating layer is prepared by one of plasma enhanced chemical vapor deposition, thermal oxidation, spin coating or vacuum evaporation.

Preferably, in the step S4, the gelatin-organic semiconductor layer is prepared by one of plasma enhanced chemical vapor deposition, thermal oxidation, spin coating, vacuum evaporation, roll coating, drop coating, stamping, printing or air spraying.

The invention discloses a high-stability temperature sensor for body temperature monitoring and a preparation method thereof. 1 to 3 mass percent of soybean isoflavone and 0.2 to 0.5 mass percent of dibutyl hydroxy toluene are added into the organic semiconductor layer. The invention utilizes the inoxidizability and hydrophobicity of soybean isoflavone and dibutyl hydroxyl toluene to grease, increases the long-term use stability of a transistor device, prevents a temperature sensor clung to the skin from being corroded by the grease, sweat and water oxygen in the air secreted by the skin to the transistor device, and simultaneously, the introduction of the dibutyl hydroxyl toluene effectively changes the appearance of an organic semiconductor layer film, reduces the defect state density of an organic semiconductor layer, makes the carrier concentration more sensitive to the change of temperature, and realizes the accurate monitoring of the organic field effect transistor temperature sensor to the body temperature. The invention solves the problems caused by high cost, poor service life of devices and low sensitivity in the existing detection technology for the body temperature monitoring temperature sensor.

In summary, due to the adoption of the technical scheme, the invention has the beneficial effects that:

1. after a certain amount of soybean isoflavone and dibutyl hydroxy toluene are introduced into the organic semiconductor layer, the service life of the device is remarkably prolonged and the stability of the device is enhanced by utilizing the oxidation resistance and hydrophobicity of the soybean isoflavone and the dibutyl hydroxy toluene to grease;

2. compared with the existing packaged transistor type skin sensor, due to the introduction of the soybean isoflavone and the dibutyl hydroxy toluene, the device is free from secondary packaging, the thickness of the transistor device is effectively reduced, and the miniaturization of the sensor is realized;

3. after the dibutyl hydroxyl toluene is introduced into the organic semiconductor layer, the appearance of the organic semiconductor layer film is effectively changed, the defect state density of the organic semiconductor layer is reduced, the carrier concentration is more sensitive to the change of temperature, the accurate monitoring of the organic field effect transistor temperature sensor on the body temperature is realized, meanwhile, the carrier concentration is more sensitive to the change of the temperature, and the requirement of the device on external equipment is reduced;

4. the soybean isoflavone and the dibutyl hydroxyl toluene have wide sources, are environment-friendly, have low cost and simple preparation process, and are easy for industrial large-scale production.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and that for those skilled in the art, other relevant drawings can be obtained according to the drawings without inventive effort, wherein:

FIG. 1 is a schematic structural diagram of a temperature sensor according to the present invention;

in fig. 1: 1-substrate, 2-gate electrode, 3-gate insulating layer, 4-organic semiconductor layer, 5-source electrode, 6-drain electrode.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the detailed description and specific examples, while indicating the preferred embodiment of the invention, are intended for purposes of illustration only and are not intended to limit the scope of the invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.

Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present invention without making any creative effort, shall fall within the protection scope of the present invention.

It is noted that relational terms such as "first" and "second," and the like, may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.

The features and properties of the present invention are described in further detail below with reference to examples.

Example one

The high-stability temperature sensor for monitoring the body temperature comprises a substrate, a gate electrode, a gate insulating layer, an organic semiconductor, a source electrode and a drain electrode, wherein the organic semiconductor layer is introduced with 1-3% of soybean isoflavone and 0.2-0.5% of butylated hydroxytoluene by mass.

The substrate can be a rigid substrate or a flexible substrate, such as one of a silicon wafer, glass, a polymer film and a metal foil, has certain water vapor and oxygen permeation resistance and has better surface flatness.

The gate electrode, the source electrode and the drain electrode are made of materials with low resistance, such as metals like gold (Au), silver (Ag), magnesium (Mg), aluminum (Al), copper (Cu), calcium (Ca), barium (Ba), nickel (Ni) and their alloy materials, metal oxides like Indium Tin Oxide (ITO), zinc tin oxide (IZO) conductive films and conductive composite materials like gold paste, silver paste, carbon paste and the like, and the preparation method can be various deposition methods such as vacuum thermal evaporation, magnetron sputtering, plasma enhanced chemical vapor deposition, screen printing, spin coating and the like. The thickness of the source electrode and the drain electrode is 10-100 nm.

The gate insulating layer is made of a material having good dielectric properties, and an inorganic insulating material such as silicon dioxide (SiO)₂) Silicon nitride (Si)₃N₄) Alumina (A1)₂O₃) Lithium fluoride (LiF), titanium dioxide (TiO)₂) Hafnium oxide (HfO)₂) Penta-oxide (Ta)₂O₅) (ii) a The organic insulating material may be polyvinyl alcohol (PVA), polyvinyl chloride (PVC), polyvinyl pyrrolidone (PVP), Polystyrene (PS), polymethyl methacrylate (PMMA), Polyethylacrylate (PCA), Polytetrafluoroethylene (PTFE), Polyimide (PI), or Polyethylene (PE), and the like, and the preparation method may be plasma enhanced chemical vapor deposition, thermal oxidation, spin coating, vacuum evaporation, or the like. The thickness of the gate insulating layer is 20-520 nm.

The organic semiconductor detection layer is made of one or more soluble organic semiconductor materials of poly-3-hexylthiophene (P3HT) and Tips-Pentacene (Tips-Pentacene), the thickness is 25-400 nm, and the preparation method can be plasma enhanced chemical vapor deposition, thermal oxidation, spin coating, vacuum evaporation, film dropping, stamping, printing or air spraying and the like. The embodiment of the organic semiconductor detection layer with the thickness of 25-400 nm combines some characteristics developed above, and illustrates the working principle and the achieved effect.

The invention will be further described with reference to FIG. 1

Example two

In this embodiment, on the basis of the first embodiment, the preparation method is as follows:

thoroughly cleaning a glass substrate sputtered with a gate electrode ITO, and drying by using dry nitrogen after cleaning;

preparing a PS film on the ITO by adopting a spin-coating method to form a grid insulation layer of 100 nm;

thirdly, heating and baking the spin-coated PS film;

fourthly, spin coating 98.5% of the gate insulating layer by mass fraction: 1%: 0.5% of P3HT, soybean isoflavone and dibutyl hydroxy toluene mixed organic semiconductor layer with the thickness of 100 nm;

preparing the copper source electrode and the drain electrode by vacuum evaporation to 100 nm.

The temperature response characteristic of the device is tested, the detection effect is good, and the service life is long.

EXAMPLE III

In this embodiment, on the basis of the first embodiment, the preparation method is as follows:

thoroughly cleaning a glass substrate 1 sputtered with a gate electrode ITO, and drying by using dry nitrogen after cleaning;

preparing a PVA film on the ITO by adopting a spin-coating method to form a grid insulation layer of 20 nm;

thirdly, heating and baking the spin-coated PVA film;

fourthly, spin coating on the gate insulating layer with mass fraction of 96.8%: 3%: 0.2% of P3HT, soybean isoflavone and dibutyl hydroxy toluene mixed organic semiconductor layer of 200 nm;

preparing a gold source electrode and a gold drain electrode by vacuum evaporation of 40 nm.

The temperature response characteristic of the device is tested, the detection effect is good, and the service life is longest.

Example four

In this embodiment, on the basis of the first embodiment, the preparation method is as follows:

thoroughly cleaning a substrate taking silicon as a gate electrode, and drying the substrate by using dry nitrogen after cleaning;

secondly, generating a layer of 20nmSiO2 serving as a gate insulation layer by adopting a thermal oxidation or vapor deposition method;

thirdly, coating 97.7 percent of mass fraction on the gate insulating layer in a spinning way: 2%: 0.3% of P3HT, soybean isoflavone and dibutyl hydroxy toluene mixed organic semiconductor layer with the thickness of 25 nm;

and fourthly, preparing the gold source electrode and the gold drain electrode by vacuum evaporation to be 60 nm.

The temperature response characteristic of the device is tested, the detection effect is poor, and the service life is long.

EXAMPLE five

In this embodiment, on the basis of the first embodiment, the preparation method is as follows:

thoroughly cleaning a substrate taking silicon as a gate electrode, and drying the substrate by using dry nitrogen after cleaning;

preparing a 300nm polyvinylpyrrolidone film on the ITO by adopting a spin-coating method to form a gate insulating layer;

thirdly, heating and baking the spin-coated polyvinylpyrrolidone film;

fourthly, spin coating on the gate insulating layer to prepare the silicon nitride layer with the mass fraction of 98%: 1.5%: 0.5% of P3HT, soybean isoflavone and dibutyl hydroxy toluene mixed organic semiconductor layer with the thickness of 300 nm;

preparing 70nm silver source electrode and drain electrode by vacuum evaporation.

The temperature response characteristic of the device is tested, the detection effect is best, and the service life is long.

EXAMPLE six

In this embodiment, on the basis of the first embodiment, the preparation method is as follows:

thoroughly cleaning a glass substrate sputtered with a gate electrode ITO, and drying by using dry nitrogen after cleaning;

preparing a 50nm aluminum oxide film on the ITO by adopting reactive magnetron sputtering to form a gate insulating layer;

thirdly, the gate insulating layer is coated on the substrate in a spinning mode, and the mass fraction is 96.6%: 3%: 0.4% of P3HT, soybean isoflavone and dibutyl hydroxy toluene mixed organic semiconductor layer with the thickness of 350 nm;

and fourthly, preparing the copper source electrode and the copper drain electrode by vacuum evaporation at 80 nm.

The temperature response characteristic of the device is tested, the detection effect is good, and the service life is long.

The best performance parameters obtained by comparison of examples 1 to 6 are shown in table 1:

organic semiconductor material and gelatin ratio	Response to humidity at room temperature
		Example 1	It has good detection effect and long service life
Example 2	Good detection effect and long service life
		Example 3	Poor detection effect and longest service life
Example 4	Poor detection effect and long service life
		Example 5	The detection effect is best, and the service life is long
Example 6	Good detection effect and long service life

Table 1: device performance parameter table added with soybean isoflavone and dibutyl hydroxy toluene in different proportions

The above description is only for the purpose of illustrating the preferred embodiments of the present invention and should not be taken as limiting the scope of the present invention, and any modifications, equivalents and improvements made by those skilled in the art within the spirit and principle of the present invention should be included in the scope of the present invention.