阅读说明：本技术 重离子微束辐照装置、系统及控制方法 (Heavy ion microbeam irradiation device, system and control method ) 是由 张艳文 郭刚 刘建成 覃英参 殷倩 肖舒颜 杨新宇 于 2020-12-07 设计创作，主要内容包括：本公开提供了一种重离子微束辐照装置、系统及控制方法。其中,重离子微束辐照装置包括调节平台,调节平台沿重离子束流的入射路径设置；调节平台包括针孔架,针孔架沿入射路径设置于调节平台上,针孔架的针孔轴线与入射路径共轴平行,以形成高质量微束；调节平台用于控制针孔架的位置,以实现针孔轴线与入射路径共轴平行。通过调节平台的控制,实现针孔轴线与重离子束流的入射路径共轴平行,使得针孔架的针孔实现了对束径的限制,对重离子质量和能量的影响较小,得到了亚微米级高质量微束,成本低、周期短,同时还实现了高质量微束的精准控制,控制操作更加智能,自动化程度更高。(The disclosure provides a heavy ion microbeam irradiation device, a system and a control method. The heavy ion micro-beam irradiation device comprises an adjusting platform, wherein the adjusting platform is arranged along an incident path of the heavy ion beam; the adjusting platform comprises a pinhole frame, the pinhole frame is arranged on the adjusting platform along an incident path, and the pinhole axis of the pinhole frame is coaxially parallel to the incident path so as to form a high-quality microbeam; the adjusting platform is used for controlling the position of the pinhole frame so as to realize that the axis of the pinhole is coaxially parallel to the incident path. Through the control of adjusting the platform, realize that the pinhole axis is coaxial parallel with the incident path of heavy ion beam current for the pinhole of pinhole frame has realized the restriction to the beam diameter, and is less to the influence of heavy ion quality and energy, has obtained the high quality microbeam of submicron level, and is with low costs, the cycle is short, has still realized the accurate control of high quality microbeam simultaneously, and control operation is more intelligent, and degree of automation is higher.)

1. A heavy ion microbeam irradiation apparatus, comprising:

an adjustment stage disposed along an incident path of the heavy ion beam, wherein the adjustment stage comprises:

the pinhole frame is arranged on the adjusting platform along the incident path, and the pinhole axis of the pinhole frame is coaxially parallel to the incident path so as to form a high-quality microbeam;

wherein the adjusting platform is used for controlling the position of the pinhole frame to enable the pinhole axis to be coaxially parallel to the incident path.

2. The apparatus of claim 1, wherein the adjustment platform comprises:

the transverse rail piece is fixedly arranged parallel to the incident path and used for fixing the adjusting platform;

the longitudinal rail piece is arranged on the transverse rail piece in a sliding mode perpendicular to the incident path in the overlooking angle and used for sliding along the transverse rail piece relatively;

the vertical rail piece is arranged on the longitudinal rail piece in a sliding manner perpendicular to the incident path in the angle of the incident beam current and is used for relatively sliding along the longitudinal rail piece;

wherein the vertical rail member, the longitudinal rail member and the transverse rail member are in a mutually perpendicular relationship in pairs; the pinhole frame is arranged on the vertical rail piece in a sliding mode.

3. The apparatus of claim 2, wherein the adjustment platform further comprises:

the outer side surface of the vertical pillow block is arranged on the longitudinal rail in a sliding manner, and the inner side surface of the vertical pillow block is fixedly provided with the vertical rail so that the vertical rail can slide relatively along the longitudinal rail;

the outer side face of the longitudinal shaft platform is arranged on the vertical rail piece in a sliding mode, and the inner side face of the longitudinal shaft platform is fixedly provided with the needle hole frame, so that the needle hole frame can slide relative to the vertical rail piece along the longitudinal shaft platform.

4. The apparatus of claim 3,

the vertical pillow block rotates by taking a vertical axis perpendicular to the inner side surface of the longitudinal rail as a rotating shaft, so that the vertical rail rotates on the longitudinal rail;

the longitudinal pillow block rotates by taking a longitudinal axis perpendicular to the inner side surface of the vertical rail as a rotating shaft, so that the pinhole frame rotates on the vertical rail.

5. The apparatus of claim 4,

and the intersection point of the vertical axis and the longitudinal axis coincides with the intersection point of the incident path of the heavy ion beam and the axis of the pinhole.

6. The apparatus of claim 1, further comprising:

and the collimation platform is fixedly arranged in front of the adjusting platform along the incident path and is used for carrying out pre-collimation treatment on the heavy ion beam current.

7. The apparatus of claim 6, wherein the collimating stage comprises:

and the collimating frame is arranged on the collimating platform along the incident path, and a pre-collimating hole of the collimating frame is used for pre-collimating the heavy ion beam incident along the incident path.

8. The apparatus of claim 1, further comprising:

and the sample platform is fixedly arranged behind the adjusting platform along the incident path and is used for receiving the high-quality microbeam.

9. The apparatus of claim 8, wherein the sample platform comprises:

the sample holder is arranged on the sample platform along the incident path, a sample to be detected is arranged on the inner side face of the sample holder, and the sample to be detected is used for receiving the irradiation of the high-quality microbeam.

10. The system of claim 8, wherein the sample platform further comprises:

and the detector is arranged on the sample platform in a sliding manner along the incident path and is used for detecting the low-energy scattering energy spectrum analysis data of the heavy ion beam current.

11. The apparatus of claim 1, further comprising:

and the vacuum chamber is used for accommodating the adjusting platform and providing a vacuum sealing environment for forming the high-quality microbeam.

12. The device of claim 1, wherein the pinholes of the pinhole frame are made of metal, the aperture of the pinholes in the direction perpendicular to the incident path is 1 μm-3 μm, and the length of the pinholes in the incident path is 100 μm-300 μm.

13. A heavy ion microbeam irradiation system comprising:

the heavy ion microbeam irradiation apparatus of any of claims 1-12;

and the controller is communicated with the heavy ion micro-beam irradiation device and is used for controlling the adjusting platform of the heavy ion micro-beam irradiation device to realize that the pinhole axis of the pinhole frame of the adjusting platform is coaxially parallel to the incident path of the heavy ion beam.

14. The system of claim 13, further comprising:

and the accelerator is arranged corresponding to a pre-collimation hole of a collimation frame of a collimation platform of the heavy ion micro-beam irradiation device and is used for generating the heavy ion beam current.

15. The system of claim 14, further comprising:

and the electronic equipment is respectively connected with the heavy ion micro-beam irradiation device, the controller and the accelerator, and is used for respectively sending control instructions to the heavy ion micro-beam irradiation device, the controller and the accelerator, and simultaneously receiving feedback data of the heavy ion micro-beam irradiation device, the controller and the accelerator and displaying information.

16. A method of controlling the heavy ion microbeam irradiation system as set forth in any of claims 13-15, which comprises:

detecting a heavy ion beam current in response to generation of the heavy ion beam current;

based on the detection, acquiring low-energy scattering energy spectrum analysis data corresponding to the heavy ion beam;

and controlling the pinhole axis of a pinhole frame of the adjusting platform to be coaxially parallel to the incident path of the heavy ion beam current according to the low-energy scattering energy spectrum analysis data so as to form a high-quality microbeam.

Technical Field

The present disclosure relates to the field of microbeam irradiation technologies, and in particular, to a heavy ion microbeam irradiation apparatus, a heavy ion microbeam irradiation system, and a control method.

Background

The heavy ion micro-beam irradiation device is an irradiation device which can limit a heavy ion beam spot (the diameter is generally in millimeter order) generated by a conventional accelerator to a micrometer level by a collimation or focusing method, and is applied to an accelerator heavy ion micro-beam simulation test. Compared with the conventional ground wide-beam simulation test means, the heavy-ion microbeam simulation test of the accelerator can determine the sensitivity of different micro-areas of the microelectronic device to the single event effect, and give the position distribution of the vulnerable units in detail. Therefore, the heavy ion microbeam irradiation device has wide application prospect in the research of the single event effect mechanism, the radiation biology, the material science and the like of the microelectronic device.

At present, in the prior art, a pinhole collimation method and a focusing method are mainly adopted for generating heavy ion microbeams by a heavy ion microbeam irradiation device, wherein the pinhole collimation method is to block most incident particles by using a pinhole collimator and only allow few particles to irradiate a sample through a fine pinhole so as to achieve the function of limiting the beam diameter, and the heavy ion microbeam irradiation device has the advantages of low equipment investment, quick response and no limit on the quality and energy of heavy ions. The focusing method focuses a beam into a micron or submicron beam by using an electromagnetic element (such as a magnetic quadrupole lens set), so that the effect of the submicron microbeam can be achieved.

However, the pinhole collimation method is only suitable for micro-beams of micron and larger than micron, and only the focusing method can be used for obtaining the submicron micro-beams, but the focusing method has larger investment and long period, and is limited by the focusing capability of the electromagnetic element, so that the method is only suitable for heavy ions with medium mass.

Disclosure of Invention

Technical problem to be solved

In order to solve the technical problem of how to obtain submicron microbeams under the conditions of low cost, short period and unlimited heavy ion quality and energy in the prior art, the disclosure provides a heavy ion microbeam irradiation device, a heavy ion microbeam irradiation system and a heavy ion microbeam irradiation control method.

(II) technical scheme

One aspect of the present disclosure provides a heavy ion microbeam irradiation apparatus, which includes an adjustment platform disposed along an incident path of a heavy ion beam current, wherein the adjustment platform includes a pinhole frame disposed on the adjustment platform along the incident path, and a pinhole axis of the pinhole frame is coaxially parallel to the incident path to form a high-quality microbeam; the adjusting platform is used for controlling the position of the pinhole frame, so that the axis of the pinhole is coaxially parallel to the incident path.

According to the embodiment of the disclosure, the adjusting platform comprises a transverse rail piece, a longitudinal rail piece and a vertical rail piece, wherein the transverse rail piece is fixedly arranged in parallel to an incident path and is used for fixing the adjusting platform; the vertical incidence path of the longitudinal rail piece is arranged on the transverse rail piece in a sliding manner in a overlooking angle and is used for relatively sliding along the transverse rail piece; the vertical rail piece is arranged on the longitudinal rail piece in a sliding manner along a vertical incident path at the angle of the incident beam current and is used for relatively sliding along the longitudinal rail piece; wherein, the vertical rail piece, the longitudinal rail piece and the transverse rail piece are mutually perpendicular in pairs; the pinhole frame is arranged on the vertical rail piece in a sliding mode.

According to the embodiment of the disclosure, the adjusting platform further comprises a vertical pillow block and a longitudinal pillow block, wherein the outer side surface of the vertical pillow block is arranged on the longitudinal rail in a sliding manner, and the inner side surface of the vertical pillow block is fixedly provided with the vertical rail so that the vertical rail slides relatively along the longitudinal rail; the outer side face of the longitudinal pillow block is arranged on the vertical rail piece in a sliding mode, and the inner side face of the longitudinal pillow block is fixedly provided with a needle hole frame, so that the needle hole frame can slide relative to the vertical rail piece.

According to the embodiment of the disclosure, the vertical pillow block rotates by taking a vertical axis line perpendicular to the inner side surface of the longitudinal rail as a rotating shaft, so that the vertical rail rotates on the longitudinal rail; the longitudinal pillow block rotates by taking a longitudinal axis which is perpendicular to the inner side surface of the vertical rail as a rotating shaft, so that the pinhole frame rotates on the vertical rail.

According to an embodiment of the present disclosure, an intersection of the vertical axis and the longitudinal axis coincides with an intersection of an incident path of the heavy ion beam and the pinhole axis.

According to the embodiment of the disclosure, the heavy ion micro-beam irradiation device further comprises a collimation platform, wherein the collimation platform is fixedly arranged in front of the adjusting platform along an incident path and is used for pre-collimating heavy ion beams.

According to the embodiment of the disclosure, the collimation platform comprises a collimation frame, the collimation frame is arranged on the collimation platform along an incident path, and a pre-collimation hole of the collimation frame is used for pre-collimating heavy ion beams incident along the incident path.

According to an embodiment of the present disclosure, the heavy ion microbeam irradiation apparatus further includes a sample platform, which is fixedly disposed behind the adjustment platform along the incident path, for receiving the high-quality microbeam.

According to this disclosed embodiment, the sample platform includes the sample frame, and the sample frame sets up on the sample platform along incident path, sets up the sample that awaits measuring on the medial surface of sample frame, and the sample that awaits measuring is used for receiving the irradiation of high quality microbeam.

According to the embodiment of the present disclosure, the sample platform further includes a detector, the detector is slidably disposed on the sample platform along the incident path to slide along the sample platform for detecting the low energy scattering spectroscopy analysis data of the heavy ion beam current.

According to the embodiment of the disclosure, the heavy ion microbeam irradiation device further comprises a vacuum chamber, and the vacuum chamber is used for accommodating the adjusting platform and providing a vacuum sealing environment for forming high-quality microbeams.

According to the embodiment of the disclosure, the pinholes of the pinhole frame are made of metal, the aperture of the pinholes perpendicular to the incident path is 1 μm-3 μm, and the length of the pinholes on the incident path is 100 μm-300 μm.

Another aspect of the present disclosure provides a heavy ion microbeam irradiation system comprising the above-described apparatus and a controller; the controller is communicated with the device and is used for controlling the adjusting platform of the device to realize that the axis of a pinhole of the pinhole frame of the adjusting platform is coaxially parallel to the incident path of the heavy ion beam.

According to an embodiment of the present disclosure, the heavy ion microbeam irradiation system further comprises an accelerator disposed corresponding to the pre-collimation hole of the collimation frame of the collimation platform of the apparatus, for generating the heavy ion beam current.

According to the embodiment of the disclosure, the heavy ion microbeam irradiation system further comprises an electronic device, wherein the electronic device is respectively connected with the device, the controller and the accelerator, and is used for respectively sending control instructions to the device, the controller and the accelerator, and simultaneously receiving feedback data of the device, the controller and the accelerator and displaying information.

In another aspect of the present disclosure, a control method of the above heavy ion microbeam irradiation system is provided, where the method includes: detecting the heavy ion beam current in response to the generation of the heavy ion beam current; based on the detection, acquiring low-energy scattering energy spectrum analysis data corresponding to the heavy ion beam; and controlling the pinhole axis of the pinhole frame of the adjusting platform to be coaxially parallel to the incident path of the heavy ion beam current according to the analysis data of the low-energy scattering energy spectrum so as to form a high-quality microbeam.

(III) advantageous effects

The disclosure provides a heavy ion microbeam irradiation device, a system and a control method. The heavy ion micro-beam irradiation device comprises an adjusting platform, wherein the adjusting platform is arranged along an incident path of heavy ion beam current, the adjusting platform comprises a pinhole frame, the pinhole frame is arranged on the adjusting platform along the incident path, and the axis of a pinhole of the pinhole frame is coaxially parallel to the incident path so as to form a high-quality micro-beam; the adjusting platform is used for controlling the position of the pinhole frame so as to realize that the axis of the pinhole is coaxially parallel to the incident path. Through the control of adjusting the platform, realize that the pinhole axis is coaxial parallel with the incident path of heavy ion beam current for the pinhole of pinhole frame has realized the restriction to the beam diameter, and is less to the influence of heavy ion quality and energy, has obtained the high quality microbeam of submicron level, and is with low costs, the cycle is short, has still realized the accurate control of high quality microbeam simultaneously, and control operation is more intelligent, and degree of automation is higher.

Drawings

FIG. 1 schematically illustrates a block diagram of a pinhole mount in an embodiment of the present disclosure;

FIG. 2 schematically illustrates a structural component diagram of an adjustment platform in an embodiment of the disclosure;

FIG. 3 schematically illustrates a structural component diagram of a collimating stage in an embodiment of the present disclosure;

FIG. 4A schematically illustrates a structural component diagram of a sample platform according to an embodiment of the disclosure;

FIG. 4B schematically illustrates a structural composition diagram of another sample platform according to an embodiment of the disclosure;

FIG. 5 schematically illustrates a low energy scattering energy spectrum of an embodiment of the disclosure;

FIG. 6 schematically illustrates a structural component diagram of an apparatus of an embodiment of the disclosure;

FIG. 7 schematically illustrates an external composition diagram of an apparatus of an embodiment of the disclosure;

FIG. 8 schematically illustrates a component diagram of a system of an embodiment of the present disclosure;

fig. 9 schematically shows a flowchart of a control method of an embodiment of the present disclosure.

Detailed Description

For the purpose of promoting a better understanding of the objects, aspects and advantages of the present disclosure, reference is made to the following detailed description taken in conjunction with the accompanying drawings.

It is to be noted that, in the attached drawings or in the description, the implementation modes not shown or described are all the modes known by the ordinary skilled person in the field of technology, and are not described in detail. Further, the above definitions of the various elements and methods are not limited to the various specific structures, shapes or arrangements of parts mentioned in the examples, which may be easily modified or substituted by those of ordinary skill in the art.

It should also be noted that directional terms, such as "upper", "lower", "front", "rear", "left", "right", and the like, used in the embodiments are only directions referring to the drawings, and are not intended to limit the scope of the present disclosure. Throughout the drawings, like elements are represented by like or similar reference numerals. Conventional structures or constructions will be omitted when they may obscure the understanding of the present disclosure.

And the shapes and sizes of the respective components in the drawings do not reflect actual sizes and proportions, but merely illustrate the contents of the embodiments of the present disclosure. Furthermore, in the claims, any reference signs placed between parentheses shall not be construed as limiting the claim.

Furthermore, the word "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements.

The use of ordinal numbers such as "first," "second," "third," etc., in the specification and in the claims to modify a corresponding element does not by itself connote any ordinal number of the element or any ordering of one element from another or the order of manufacture, and the use of the ordinal numbers is only used to distinguish one element having a certain name from another element having a same name.

Those skilled in the art will appreciate that the modules in the device of an embodiment may be adaptively changed and placed in one or more devices different from the embodiment. The modules or units or components of the embodiments may be combined into one module or unit or component, and furthermore they may be divided into a plurality of sub-modules or sub-units or sub-components. All of the features disclosed in this specification (including any accompanying claims, abstract and drawings), and all of the processes or elements of any method or apparatus so disclosed, may be combined in any combination, except combinations where at least some of such features and/or processes or elements are mutually exclusive. Each feature disclosed in this specification (including any accompanying claims, abstract and drawings) may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise. Also in the unit claims enumerating several means, several of these means may be embodied by one and the same item of hardware.

Similarly, it should be appreciated that in the foregoing description of exemplary embodiments of the disclosure, various features of the disclosure are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure and aiding in the understanding of one or more of the various disclosed aspects. However, the disclosed method should not be interpreted as reflecting an intention that: that is, the claimed disclosure requires more features than are expressly recited in each claim. Rather, as the following claims reflect, disclosed aspects lie in less than all features of a single foregoing disclosed embodiment. Thus, the claims following the detailed description are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate embodiment of this disclosure.

In order to solve the technical problem of how to obtain submicron microbeams under the conditions of low cost, short period and unlimited heavy ion quality and energy in the prior art, the disclosure provides a heavy ion microbeam irradiation device, a heavy ion microbeam irradiation system and a heavy ion microbeam irradiation control method.

As shown in fig. 1, 2 and 6, one aspect of the present disclosure provides a heavy ion microbeam irradiation apparatus, which includes an adjustment platform 100, wherein the adjustment platform 100 is disposed along an incident path E of a heavy ion beam, wherein the adjustment platform 100 includes a pinhole frame 110, the pinhole frame 110 is disposed on the adjustment platform 100 along the incident path E, and a pinhole axis s0 of a pinhole of the pinhole frame 110 is coaxially parallel to the incident path E to form a high-quality microbeam; wherein the adjustment stage 100 is used to control the position of the pinhole carrier 110 such that the pinhole axis s0 is coaxially parallel to the incident path E.

The adjusting platform 100 is a frame structure, and is integrally fixed on a plane, but can realize free movement of the pinhole frame 110 relative to the plane at any position in a specific space range, has an adjusting function of at least five-dimensional freedom, and can realize five-dimensional automatic adjustment of the arranged pinhole frame 110, thereby driving the position of the pinhole 101 arranged on the pinhole frame 110 to change at any position in the specific space range, so that the pinhole axis s0 is coaxially parallel to the incident path E. In this case, the pinhole 101 can achieve an optimal beam diameter limiting effect, and reduce the influence on beam quality and energy. The incident path E is the irradiation direction of the heavy ion beam, and E can indicate that the beam has specific energy.

The pinhole carrier 110 may have a plate-like structure, and the pinholes 101 may be formed or arranged at an intermediate position. The pinhole 101 may be an opening of a pinhole fitting of the pinhole frame 110, and the diameter size of the pinhole 101 of different pinhole fittings may be different, which in turn may realize replacement of pinholes 101 of different sizes. The pinhole carrier 110 has a thickness dimension h for forming a support for the pinhole 101. The needle hole 101 may be directly formed in the plate-like structure of the needle hole frame 110, and is not limited herein.

Through the control of the adjusting platform 100, the pinhole axis s0 is coaxially parallel to the incident path E of the heavy ion beam, so that the pinhole 101 of the pinhole frame 110 is limited in beam diameter, the influence on the quality and energy of the heavy ions is small, a submicron-grade high-quality microbeam is obtained, the cost is low, the period is short, meanwhile, the accurate control of the high-quality microbeam is realized, the control operation is more intelligent, and the automation degree is higher.

As shown in fig. 1 and 2, according to the embodiment of the present disclosure, the hole wall material of the pinhole 101 is metal, the aperture of the pinhole 101 perpendicular to the incident path E is 1 μm to 3 μm, and the length of the pinhole 101 on the incident path E is 100 μm to 300 μm.

The pinhole 101 is an opening of a plate-like structure through which the pinhole frame 110 is externally formed. The hole wall of the pinhole 101 is made of a metal material, such as gold, silver, copper, iron, and the like, so as to realize the beam current limiting effect by the metal material. If the pinhole 101 is an opening directly formed through the pinhole frame 110, the material of the pinhole frame 110 surrounding the pinhole 101 should be metal. If the pinhole 101 is an opening of a pinhole fitting, the pinhole fitting is a metal fitting.

The aperture of the pinhole 101 is r, wherein r is more than or equal to 1 μm and less than or equal to 3 μm, so as to limit the beam flow and realize the formation of submicron-grade high-quality micro-beams. The length of the pinhole 101 on the incident path E can be equal to the thickness h of the pinhole frame 110, and h is more than or equal to 100 mu m and less than or equal to 300 mu m, so that the influence on the quality and energy of the beam due to overlong length can be avoided, and the limitation on the beam can be ensured.

As shown in fig. 2, according to an embodiment of the present disclosure, the adjustment platform 100 includes a transverse rail member 120, a longitudinal rail member 130, and a vertical rail member 140, the transverse rail member 120 being fixedly disposed parallel to the incident path E for fixing the adjustment platform 100; the longitudinal rail member 130 is slidably disposed on the transverse rail member 120 along the vertical incident path E in the top view, for relative sliding along the transverse rail member 120; the vertical rail member 140 is arranged on the longitudinal rail member 130 in a sliding manner along the vertical incident path E at the angle of the incident beam, and is used for relatively sliding along the longitudinal rail member 130; wherein the vertical rail member 140, the longitudinal rail member 130 and the transverse rail member 120 have a perpendicular relationship with each other two by two. The pinhole carrier 110 is slidably mounted on the vertical rail 140.

The transverse rail member 120 is fixed on a plane and has a rectangular strip rail structure; the longitudinal rail member 130 is slidably disposed on the inner side surface of the transverse rail member 120, and may have the same structure as the transverse rail member 120, so that it can move transversely along the extending direction of the transverse rail member 120. The vertical rail member 140 is slidably disposed on the inside surface of the longitudinal rail member 130 such that it can move longitudinally along the direction of extension of the longitudinal rail member 130. Therefore, when the pinhole frame 110 is slidably disposed on the vertical rail 140, the position adjustment of the pinhole frame 110 in three-dimensional freedom in space can be achieved by means of the vertical rail 140, the longitudinal rail 130 and the transverse rail 120.

In the embodiment of the present disclosure, the sliding arrangement between a and B may be understood as that a has a sliding part, and B has a sliding rail for limiting the sliding part, so that the sliding part slides along the sliding rail without being separated from the sliding rail, thereby the sliding of a relative to B may be realized, and vice versa. In addition, the inner side surface is a side surface facing the side of the pinhole frame 110 in each constituent structure of the adjustment platform 100, and the outer side surface is a side surface corresponding to a side facing away from the pinhole frame 110.

As shown in fig. 2, according to the embodiment of the present disclosure, the adjustment platform 100 further includes a vertical pillow block 150 and a longitudinal pillow block 160, an outer side surface of the vertical pillow block 150 is slidably disposed on the longitudinal rail 130, and an inner side surface of the vertical pillow block 150 is fixedly disposed with the vertical rail 140, so that the vertical rail 140 slides along the longitudinal rail 130; the outer side of the longitudinal pillow block 160 is slidably disposed on the vertical rail 140, and the inner side of the longitudinal pillow block 160 is fixedly disposed with the needle hole frame 110, so that the needle hole frame 110 can slide along the vertical rail 140.

Through the sliding connection of the vertical pillow block 150 and the longitudinal rail member 130, and the fixed arrangement of the vertical rail member 140, the vertical rail member 140 can be slidably arranged on the longitudinal rail member 130. Wherein vertical rail 140 is the bar-shaped structure of "L" type, on the medial surface of the fixed vertical pillow block 150 in bottom of vertical rail 140 for vertical rail 140 drives the axis that the pinhole frame realized relative vertical pillow block 150 and rotates.

Through the sliding connection of the longitudinal pillow block 160 and the vertical rail 140, and the fixed arrangement of the needle hole frame 110, the needle hole frame 110 can be slidably arranged on the vertical rail 130. The longitudinal pillow block 160 drives the needle hole frame 110 to move up and down while sliding up and down along the vertical rail 140.

As shown in fig. 2 and 6, according to an embodiment of the present disclosure, the vertical pillow block 150 rotates about a vertical axis s1 perpendicular to the inner side of the longitudinal rail 130, so that the vertical rail 140 rotates on the longitudinal rail 130; the longitudinal pillow block 160 rotates about a longitudinal axis s2 perpendicular to the inner side of the vertical rail 140 to allow the needle holder 110 to rotate on the vertical rail 140.

Therefore, by means of the transverse rail member 120, the longitudinal rail member 130, the vertical pillow block 150, the vertical rail member 140 and the longitudinal pillow block 160, the pinhole 101 of the pinhole frame 110 can freely move relative to the plane at any position in a specific space range, and the coordinate adjusting effect of at least five-dimensional freedom degrees is achieved. Meanwhile, with the help of each composition structure of the adjusting platform 100, the automation and the intellectualization of the accurate adjustment of the pinhole 101 are easier to realize.

As shown in fig. 2 and 6, according to an embodiment of the present disclosure, the intersection of the vertical axis s1 and the longitudinal axis s2 coincides with the intersection of the incident path E of the heavy ion beam current and the pinhole axis s 0. Therefore, by using the intersection point of the vertical axis s1 and the longitudinal axis s2 as the fixed position reference coordinate point, the calibration work of the intersection point of the incident path E of the heavy ion beam and the pinhole axis s0 can be avoided, the adjustment time of the coordinate position is further saved, the operation is more convenient, and the position adjustment efficiency of the pinhole 101 is further improved under the condition of ensuring the adjustment accuracy.

Specifically, in practical application, a pinhole accessory with a pinhole 101 may be placed on the pinhole frame 110, and the position of the pinhole 101 is adjusted so that the pinhole 101 is located at the intersection of the vertical axis s1 and the longitudinal axis s 2; then, the transverse rail piece 120, the longitudinal rail piece 130 and the vertical rail piece 140 of the adjusting platform 100 are controlled to translate or vertically move, so that the position of the pinhole frame 110 is initially adjusted, the position of the pinhole 101 is located on a beam line, and finally, the vertical pillow block 150 and the longitudinal pillow block 160 rotate at respective micro angles, so that fine adjustment of the angle of the pinhole axis s0 of the pinhole 101 can be achieved, and the pinhole axis s0 of the pinhole 101 is ensured to be coaxially parallel to the direction of an ion beam incident path E. Where co-axial parallelism is understood to mean that the pinhole axis s0 is parallel to the incident path E and co-axial, in fact two lines coincide and do not intersect.

Therefore, as shown in fig. 1, 2 and 6, the needle hole 101 is disposed on the needle hole frame 110, the needle hole frame 110 is fixed on the longitudinal pillow block 160, the longitudinal pillow block can rotate along the longitudinal axis s2, the vertical rail 140 is L-shaped, the longitudinal pillow block 160 can move up and down on the vertical rail 140 along the vertical direction, the vertical rail 140 is fixedly connected with the vertical pillow block 150, the vertical pillow block 150 can rotate along the vertical axis s1, the vertical pillow block 150 can move left and right on the longitudinal rail 130 along the horizontal direction, and the longitudinal rail 130 can move back and forth on the transverse rail 120 along the horizontal direction, so that the adjusting platform 100 of the embodiment of the present disclosure can achieve position adjustment of five-dimensional degrees of freedom.

As shown in fig. 3 and 6, according to the embodiment of the present disclosure, the heavy ion micro-beam irradiation apparatus further includes a collimation platform 200, and the collimation platform 200 is fixedly disposed in front of the adjustment platform 100 along the incident path E and is used for performing pre-collimation processing on the heavy ion beam.

The collimating stage 200 is a strip structure fixed on a plane, and the shape structure may be the same as the vertical rail 140. The bottom of the collimating stage 200 may be used for fixing, and the main body 220 may be used as a fixing frame for fixing the collimating stage 210 described below.

As shown in fig. 3 and 6, according to the embodiment of the present disclosure, the collimating platform includes a collimating frame 210, the collimating frame 210 is disposed on the collimating platform 200 along an incident path E, and a pre-collimating hole 201 of the collimating frame 200 is used for pre-collimating a heavy ion beam incident along the incident path E.

After the pre-collimation treatment of the pre-collimation hole 201, the beam diameter of the heavy ion beam is preliminarily limited, and the heavy ion beam is directly incident along the incident path E toward the pinhole frame 110 of the adjustment platform 100.

As shown in fig. 4A and 6, according to an embodiment of the present disclosure, the heavy ion microbeam irradiation apparatus further includes a sample stage 300, the sample stage 300 is fixedly disposed behind the conditioning stage 100 along the incident path E for receiving high-quality microbeams.

After being limited by the pinhole 101 of the adjustment platform 100, the ion beam current is limited to form a high-quality microbeam of a submicron level, and the high-quality microbeam can be directly incident on a sample holder 310 of the sample platform 300 along an incident path E to irradiate a sample arranged on the sample holder 310, so as to complete microbeam irradiation.

The sample platform 300 is a strip structure fixed on a plane, and the shape structure may be the same as the collimating platform 200. The bottom of the sample platform 300 may be used for fixing, and the main body 320 may be used as a fixing frame for fixing the sample holder 310 described below. The sample holder 310 may also be disposed on the main body 320 to slide up and down, rather than being fixed.

As shown in fig. 4A and 6, according to the embodiment of the present disclosure, the sample platform 300 includes a sample holder 310, the sample holder 310 is disposed on the sample platform 300 along an incident path E, and a sample to be measured is disposed on an inner side surface of the sample holder 300, and the sample to be measured is used for receiving irradiation of high-quality micro-beams.

A sample setting position 301 is provided on the sample holder 300 at a position corresponding to the incident path E, and is used for setting a sample.

Therefore, as shown in fig. 2, 3, 4A and 6, the device is integrally applied to a micro-beam target chamber, an ion beam current generated by an accelerator firstly passes through a pre-collimating hole 201 on a collimating platform 200, a heavy ion small beam spot with millimeter scale is formed through the pre-collimating hole 201, the small beam spot is further reduced to a beam spot with micron scale by adjusting a pinhole 101 of the platform 100, then a pinhole axis s0 of the pinhole 101 is strictly coaxially parallel to a beam incident path by further adjusting five-dimensional freedom of the platform 100, scattering components at the edge of the pinhole 101 are reduced to the minimum, the transmitted beam spot with micron scale has the best quality, and a high-quality beam spot with submicron scale can be achieved. And the micron-scale beam spot is irradiated on the sample to be irradiated on the sample platform 300, so that the aim of testing the irradiation effect of the micron-scale small beam spot is fulfilled. Wherein, the sample to be irradiated can also be controlled to move on a plane perpendicular to the incident path E of the beam line by adjusting the sample platform 300.

As shown in fig. 4B, according to the embodiment of the present disclosure, the sample platform further includes a detector 330, the detector 330 is slidably disposed on the sample platform 300 along the incident path E to slide along the sample platform 300, and is configured to detect low-energy scattering spectroscopy data of the heavy ion beam current when the detector 300 detects the heavy ion beam current, the low-energy scattering spectroscopy data is used to control that the pinhole axis s0 of the pinhole frame 110 is coaxially parallel to the incident path E to form a high-quality microbeam.

The detector 330 may be an Au/Si surface barrier detector, which is mainly applied to the detection of heavy ion beam current and can determine the quality of the beam current. Specifically, while the adjustment process of the pinhole 101 angle of the platform 100 is realized, the Au/Si surface barrier detector is used for detecting the ion beam energy spectrum behind the pinhole 101, the optimal position angle of the pinhole 101 can be obtained by comparing the weights of the low-energy scattering components of the energy spectrum, and the coaxial parallel characteristic of the pinhole axis s0 of the pinhole 101 and the beam incident path E is solved. Therefore, as shown in fig. 4B, the detector 330 can also be slidably disposed on the main body 320 of the sample platform 300 relative to the sample holder 310 and can move up and down along the main body 320 relative to the sample holder.

The adjustment process of the pinhole 101 based on the detector 330 is as follows: the angle of the pinhole 101 in the direction of the longitudinal axis s2 is adjusted, and the energy spectrum of the Au/Si surface barrier detector 330 arranged behind the pinhole 101 is analyzed, so that the analysis and judgment conditions are that the less the low-energy scattering component is, the better the energy spectrum analysis effect is, and the more appropriate the angle of the pinhole 101 in the direction of the longitudinal axis s2 can be judged. Then, the optimum angle of the longitudinal axis s2 is fixed, the angle of the pinhole 101 in the direction of the vertical axis s1 is adjusted, and the optimum angle of the pinhole 101 in the direction of the vertical axis s1 can be determined. Accordingly, an energy spectrum of the Au/Si surface barrier detector can be obtained, as shown in fig. 5, the energy spectrum is at a certain angle of the pinhole 101, and it can be seen that 418 peaks corresponding to full energy and 7 peaks corresponding to full width at half maximum are obtained. Total count of full spectrum 552. The count above the peak position (lane 376) of 0.90 full energy is 488, and the ratio to the total count is 0.88; the count from above the peak position of 0.95 full energy (lane 397) is 480, and the ratio to the total count is 0.87. Therefore, when the low-energy scattering component caused by the pinhole 101 is less than 12%, it can be preliminarily determined that the coaxial parallel characteristic between the pinhole 101 and the beam incident path E is good at this angle.

Therefore, the pinhole axis s0 is coaxially parallel to the incident path E of the heavy ion beam by controlling the adjusting platform 100, and high-quality beam current is provided for microbeam imaging.

As shown in fig. 7, according to an embodiment of the present disclosure, the heavy ion microbeam irradiation apparatus further includes a vacuum chamber 400, the vacuum chamber 400 accommodates the conditioning platform 100, and provides a vacuum sealed environment for formation of high-quality microbeams.

In practical applications, the alignment stage 200, the conditioning stage 100 and the sample stage 300 are all disposed in a vacuum chamber 400, and the vacuum chamber 400 is a vacuum target chamber having a sealed vacuum dark room environment. Signals and power supplies of the collimation platform 200, the regulation platform 100, the sample platform 300 and the like are introduced or output through a vacuum flange of a target chamber wall, so that the external control on the device is realized.

As shown in fig. 8, another aspect of the present disclosure provides a heavy ion microbeam irradiation system comprising the above-described apparatus and controller 500; the controller 500 is communicated with the device and is used for controlling the adjusting platform 100 of the device, so that the pinhole axis s0 of the pinhole frame 110 of the adjusting platform 100 is coaxially parallel to the incident path E of the heavy ion beam.

The controller 500 is a control driver, which is disposed outside the vacuum chamber 400 and has a connection relationship with the vacuum chamber 400. Including electrical and physical connections. The conditioning platform 100 is controlled primarily by a dedicated control driver. As shown in fig. 8, the electric signals and power of the alignment stage 200, conditioning stage 100, and sample stage 300 are introduced or outputted to the controller 500 through the vacuum flange of the target chamber wall. The controller 500 may set the number of steps, speed, direction (positive or negative), and return to zero, etc., that regulate the movement of the platform.

As shown in fig. 3, 6 and 8, according to an embodiment of the present disclosure, the heavy ion microbeam irradiation system further includes an accelerator disposed corresponding to the pre-collimation aperture 201 of the collimation frame 210 of the collimation platform 200 of the apparatus for generating a heavy ion beam current.

The accelerator tube 610 of the accelerator may be directly interfaced to a beam flange on the vacuum chamber 400, whose centerline remains as coincident as possible with the centerline of the pre-alignment hole 201. Therefore, the heavy ion beam current emitted from the accelerating tube 610 can be directly incident on the pre-collimation hole 201.

As shown in fig. 8, according to an embodiment of the present disclosure, the heavy ion microbeam irradiation system further includes an electronic device 700, where the electronic device 700 is connected to the apparatus, the controller 500, and the accelerator, respectively, and is configured to send control instructions to the apparatus, the controller 500, and the accelerator, and simultaneously receive feedback data of the apparatus, the controller 500, and the accelerator and perform information display.

The electronic device 700 is connected with the control driver 500 outside the target chamber to finally realize the control of the adjustment platform 100 by the electronic device 700. In addition, the controller 500 may provide a connection port such as an RS232 serial port to be electrically connected to the electronic device, so as to realize free control of the adjustment platform 100 through the electronic device 700. The system of the disclosed embodiment is operated by vacuum for 60 hours, i.e. the adjustment platform 100 is applicable to a vacuum system and the movement accuracy is up to 1.25 μm.

As shown in fig. 9, another aspect of the present disclosure provides a control method of the above-mentioned heavy ion microbeam irradiation system, which includes steps S901-S903.

In step S901, detecting a heavy ion beam in response to generation of the heavy ion beam;

in step S902, based on the detection, low-energy scattering spectrum analysis data corresponding to the heavy ion beam current is obtained;

in step S903, according to the low energy scattering spectrum analysis data, the pinhole axis of the pinhole frame of the adjustment platform is controlled to be coaxially parallel to the incident path of the heavy ion beam to form a high quality microbeam.

Specifically, the control method can be implemented by combining the descriptions of the apparatus and the system, and the description is omitted here.

So far, the embodiments of the present disclosure have been described in detail with reference to the accompanying drawings.

While the present disclosure has been described in connection with the accompanying drawings, the embodiments disclosed in the drawings are intended to be illustrative of the preferred embodiments of the disclosure, and should not be construed as limiting the disclosure. The dimensional proportions in the drawings are merely schematic and are not to be understood as limiting the disclosure.

Although a few embodiments of the present general inventive concept have been shown and described, it would be appreciated by those skilled in the art that changes may be made in these embodiments without departing from the principles and spirit of the general inventive concept, the scope of which is defined in the claims and their equivalents.

Other embodiments, such as different arrangements and permutations of known components of the device, may also be used, and may be adjusted or changed as appropriate according to the actual requirements and conditions of the application. Accordingly, the structures shown in the specification and drawings are illustrative only and are not intended to limit the scope of the present disclosure. In addition, it is understood by those skilled in the art that the shapes and positions of the components in the embodiments are not limited to the shapes illustrated in the drawings, and may be modified according to the requirements and/or manufacturing steps of practical applications without departing from the spirit of the present disclosure.

The above-mentioned embodiments are intended to illustrate the objects, aspects and advantages of the present disclosure in further detail, and it should be understood that the above-mentioned embodiments are only illustrative of the present disclosure and are not intended to limit the present disclosure, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present disclosure should be included in the scope of the present disclosure.