阅读说明：本技术 一种低阻抗型ito导电膜 (Low impedance type ITO conductive film ) 是由 赵飞 陈超 王志坚 陈涛 于 2020-12-09 设计创作，主要内容包括：本发明公开了一种低阻抗型ITO导电膜,包括基底材料和位于基底材料之上的若干组高低复配导光材料,所述高低复配导光材料包括一面相固定的低折射率材料和高折射率材料,所述低折射率材料的另一面与基底材料或者另一组高低复配导光材料的高折射率材料相固定,所述低折射率材料的折射率为1.35～1.65,所述高折射率材料的折射率为1.8～2.1,利用高低折射率匹配的方法,在原低阻抗ITO导电膜的基础上,设计出了一种可有效改善光学性能新的膜系结构,能够明显降低反射率,提高可见光透光率,解决颜色发蓝发黄现象,使蚀刻线路变轻,十分适用于大尺寸触摸屏领域的使用。(The invention discloses a low-impedance ITO conductive film, which comprises a substrate material and a plurality of groups of high-low compound light guide materials positioned on the substrate material, the high-low compound light guide material comprises a low refractive index material and a high refractive index material, one surface of which is fixed, the other surface of the low-refractive index material is fixed with the substrate material or the high-refractive index material of another group of high-low compound light guide materials, the refractive index of the low refractive index material is 1.35-1.65, the refractive index of the high refractive index material is 1.8-2.1, and by utilizing a high-low refractive index matching method, on the basis of the original low-impedance ITO conductive film, a film system structure capable of effectively improving optical performance is designed, reflectivity can be obviously reduced, visible light transmittance is improved, the phenomenon of bluing and yellowing of colors is solved, an etched line is light, and the film system structure is very suitable for being used in the field of large-size touch screens.)

1. A low impedance type ITO conductive film is characterized in that: the light guide material comprises a base material (1) and a plurality of groups of high-low compound light guide materials (2) positioned on the base material (1), wherein the high-low compound light guide materials (2) comprise low-refractive-index materials (21) and high-refractive-index materials (22) with one fixed surface, and the other surface of the low-refractive-index materials (21) is fixed with the base material (1) or the high-refractive-index materials (22) of the other group of high-low compound light guide materials (2).

2. The low resistance ITO conductive film of claim 1, wherein: the substrate material (1) is a PET film, a COP film, a PI film, a TAC film or a PC board.

3. The low resistance ITO conductive film of claim 1, wherein: the refractive index of the low-refractive-index material (21) is 1.35-1.65.

4. The low resistance ITO conductive film of claim 3, wherein: the low refractive index material (21) is SiO₂Coating layer, Al₂O₃Coating, MgF₂Plating layer, AlF₃Coating layer, BaF₂Coating or YF₃And (7) plating.

5. The low resistance ITO conductive film of claim 1, wherein: the refractive index of the high-refractive-index material (22) is 1.8-2.1.

6. The low resistance ITO conductive film of claim 5, wherein: the high-refractive-index material (22) is an ITO coating.

7. The low resistance ITO conductive film of any of claims 1 to 6, wherein: the number of the high-low compound light guide materials (2) is two.

8. The low resistance ITO conductive film of claim 7, wherein: the film thicknesses of the high-refractive-index materials (22) of the two groups of high-low compound light guide materials (2) are the same or similar.

9. The low resistance ITO conductive film of claim 7, wherein: the thickness of the low refractive index material (21) of the high-low compound light guide material (2) positioned below is 1-5 nm, and the thickness of the low refractive index material (21) of the high-low compound light guide material (2) positioned above is 10-20 nm.

[ technical field ] A method for producing a semiconductor device

The invention relates to the technical field of ITO films, in particular to the technical field of a low-impedance ITO conductive film.

[ background of the invention ]

Most of the conventional touch screens are applied to small and medium-sized electronic products such as mobile phones, notebook computers or tablet computers. As large-sized products such as touch-control integrated machines, conference panels, educational televisions and the like are also gradually adopting touch screens, the market demand of large-sized touch panels is increasing.

An ITO conductive film is one of the most commonly used conductive materials in small and medium-sized touch screens, but is not widely used in the field of large-sized touch screens. At present, the conductive materials used for large-size touch screens mainly include metal mesh materials, nano-silver materials and low-impedance ITO conductive materials.

The metal grid material mainly adopts metal materials such as copper, silver and the like, has very good conductivity, but has the technical problem of moire interference, so that the metal grid material can only be used for low-resolution medium and low-end products.

The nano silver material has the advantages of good conductivity, low cost, good flexibility and the like, and is once considered to be the best material for replacing an ITO conductive film. But the natural characteristic that silver is easy to oxidize causes the poor environment measuring performance of the nano silver material. In addition, the diffuse reflection of the nano-silver wires has the defect of high haze.

As shown in FIG. 1, the conventional low-resistance ITO conductive material generally comprises a substrate material a and SiO sequentially arranged from bottom to top₂A plating layer b and an ITO plating layer c. Generally, the resistance of the required ITO conductive film is different for touch control products with different sizes. The 150 ohm square resistance ITO conductive film can be suitable for touch products within 11 inches; the 100 ohm ITO conductive film can be suitable for touch products within 21 inches; the 80/60 ohm ITO conductive film can be suitable for touch products within 55 inches; the 40 ohm ITO conductive film can be suitable for touch products within 65 inches; 25/15 Euro ITO film is suitable for 86/98 inch touch products. The lower the resistance, the thicker the ITO conductive film layer is inevitably caused, and the optical performance of the ITO conductive film is also sacrificed, thereby showing the problems of low light transmittance, bluish color (light reflection), heavy etching line, and the like.

[ summary of the invention ]

The invention aims to solve the problems in the prior art and provides a low-impedance ITO conductive film which can obviously reduce the reflectivity, improve the visible light transmittance, solve the phenomenon of bluing and yellowing of colors and lighten etched lines.

In order to achieve the purpose, the invention provides a low-impedance ITO conductive film, which comprises a substrate material and a plurality of groups of high-low compound light guide materials positioned on the substrate material, wherein the high-low compound light guide materials comprise a low-refractive-index material and a high-refractive-index material, one surface of the low-refractive-index material is fixed, and the other surface of the low-refractive-index material is fixed with the substrate material or the high-refractive-index material of another group of high-low compound light guide materials.

Preferably, the base material is a PET film, a COP film, a PI film, a TAC film, or a PC board.

Preferably, the refractive index of the low refractive index material is 1.35 to 1.65.

Preferably, the low refractive index material is SiO₂Coating layer, Al₂O₃(alumina) coating, MgF₂(magnesium fluoride) plating layer, AlF₃(aluminum fluoride) plating layer, BaF₂(barium fluoride) coating or YF₃(yttrium fluoride) plating.

Preferably, the refractive index of the high refractive index material is 1.8 to 2.1.

Preferably, the high refractive index material is an ITO plating layer.

Preferably, the number of the high-low compound light guide materials is two.

Preferably, the film thicknesses of the high-refractive-index materials of the two groups of high-low compound light guide materials are the same or similar.

Preferably, the thickness of the low refractive index material of the high-low compound light guide material positioned below is 1-5 nm, and the thickness of the low refractive index material of the high-low compound light guide material positioned above is 10-20 nm.

Taking the number of the high-low compound light guide materials as two groups as an example, the film system structure of the two groups of high-low compound light guide materials from bottom to top can be as follows:

①SiO₂、ITO、SiO₂and ITO;

②Al₂O₃、ITO、SiO₂and ITO;

③SiO₂、ITO、Al₂O₃and ITO;

④SiO₂、ITO、MgF₂and ITO;

⑤SiO₂、ITO、AlF₃and ITO;

⑥SiO₂、ITO、BaF₂and ITO;

⑦SiO₂、ITO、YF₃and ITO.

The invention has the beneficial effects that: the invention designs a new film system structure capable of effectively improving the optical performance by utilizing a high-low refractive index matching method on the basis of the original low-impedance ITO conductive film, can obviously reduce the reflectivity, improve the visible light transmittance, solve the phenomenon of bluing and yellowing of the color, lighten an etched line, and is very suitable for the field of large-size touch screens.

The features and advantages of the present invention will be described in detail by embodiments in conjunction with the accompanying drawings.

[ description of the drawings ]

FIG. 1 is a schematic structural diagram of a conventional low-resistance ITO conductive film;

FIG. 2 is a schematic structural diagram of a low-impedance ITO conductive film according to the present invention;

FIG. 3 is a graph of visible light transmittance;

fig. 4 is a graph of visible light reflectance.

In the figure: 1-substrate material, 2-high-low compound light guide material, 21-low refractive index material, 22-high refractive index material, a-substrate material and b-SiO₂A plating layer and a c-ITO plating layer.

[ detailed description ] embodiments

The first embodiment is as follows:

referring to fig. 2, the low-impedance ITO conductive film of the present invention includes a substrate material 1 and two sets of high-low compound light guide materials 2 located on the substrate material 1, where the high-low compound light guide materials 2 include a low refractive index material 21 and a high refractive index material 22 with one surface fixed, and the other surface of the low refractive index material 21 is fixed with the substrate material 1 or the high refractive index material 22 of the other set of high-low compound light guide materials 2.

The substrate material 1 is a PET film, a COP film, a PI film, a TAC film or a PC board.

The impedance is 25 ohms.

The film system structure of the two groups of high-low compound light guide materials 2 from bottom to top is sequentially SiO₂、ITO、SiO₂And ITO. Wherein the thickness of the film layer is 1-5 nm, 35-45 nm, 10-20 nm and 35-45 nm from bottom to top in sequence.

Wherein, the ITO is a high-refractive-index material, and the composite refractive index is 1.8-2.1; SiO 2₂The material is low in refractive index, and the refractive index is 1.4-1.5.

Example two:

the impedance is 40 ohms.

The film system structure of the two groups of high-low compound light guide materials 2 from bottom to top is sequentially SiO₂、ITO、SiO₂And ITO. Wherein the thickness of the film layer is 1-5 nm, 25-35 nm, 10-20 nm and 25-35 nm from bottom to top in sequence.

The other steps are the same as those of the first embodiment.

Example three:

the impedance is 60 ohms.

The film system structure of the two groups of high-low compound light guide materials 2 from bottom to top is sequentially SiO₂、ITO、SiO₂And ITO. Wherein the thickness of the film layer is 1-5 nm, 15-25 nm, 10-20 nm and 15-25 nm from bottom to top in sequence.

The other steps are the same as those of the first embodiment.

Example four:

the impedance is 80 ohms.

The film system structure of the two groups of high-low compound light guide materials 2 from bottom to top is sequentially SiO₂、ITO、SiO₂And ITO. Wherein the thickness of the film layer is 1-5 nm, 10-20 nm and 10-20 nm from bottom to top in sequence.

The other steps are the same as those of the first embodiment.

Example five:

the impedance is 25 ohms.

The film system structure of the two groups of high-low compound light guide materials 2 from bottom to top is sequentially SiO₂、ITO、Al₂O₃And ITO. Wherein the thickness of the film layer is 1-5 nm, 35-45 nm, 10-25 nm and 35-45 nm from bottom to top in sequence.

The other steps are the same as those of the first embodiment.

Example six:

the impedance is 25 ohms.

The film system structure of the two groups of high-low compound light guide materials 2 from bottom to top is sequentially SiO₂、ITO、MgF₂And ITO. Wherein the thickness of the film layer is 1-5 nm, 35-45 nm, 5-15 nm and 35-45 nm from bottom to top in sequence.

The other steps are the same as those of the first embodiment.

Example seven:

the product prepared in the first example was compared with a commercial 25 ohm product, and the visible transmittance was measured using a spectrophotometer, respectively.

Referring to fig. 3, the average value of the visible light transmittance of the conventional ITO product is 84.56%, while the average value of the visible light transmittance of the example is 86.6%, and the transmittance is improved by about 2%.

Example eight:

the product prepared in example one was compared to a commercial 25 ohm product one and tested for light transmission L, a and b, respectively.

Color quantization is expressed in CIE L a b color coordinate values, where a and b should be as close to 0 as possible so that the product color is neutralized. The test results are shown in table 1 below:

TABLE 1 results of testing the light transmission La b

Table 2 reflection la b values test results

As can be seen from the above tables 1 and 2, the conventional ITO product has light transmission, slight yellow appearance, obvious blue reflection and poor visual sense of users. The invention effectively improves the phenomenon, the light transmission a value is reduced by 0.2, the b value is reduced by about 1.5, and the phenomenon that the light transmission and yellowing of the real object are reduced; the reflection a increases by about 0.4, the reflection b increases by about 7.5, and the reflection of the object is seen to be bluish and basically neutral.

Example nine:

the product prepared in example one was compared to a commercial 25 ohm product one and the visible reflectance test was performed separately.

Within the visible wavelength range, the ITO region has high reflectivity and the etched region has low reflectivity. The invention mainly reduces the reflectivity difference between the ITO area and the etched non-ITO area by reducing the reflectivity of the ITO area, so that the etched lines are lightened, and the visual sense is improved. The visual contrast of the etched lines is quantified and represented by the difference in the reflectance of visible light.

TABLE 3 reflectance difference

Referring to fig. 4 and table 3 above, in the visible light 400-700 nm band, the difference between the reflectance of the etched area and the reflectance of the non-etched area of the 25 ohm product of the present invention is 0.51, while the difference between the reflectance of the etched area and the reflectance of the non-etched area of the conventional 25 ohm product is 2.64. In the most sensitive light wave band of 500-650 nm of human eyes, the difference of the reflectivity of an etched area and a non-etched area of the 25 ohm product is 0.25, while the difference of the reflectivity of the etched area and the non-etched area of the conventional 25 ohm product I is 1.48. The 25 ohm product of the invention has much lower difference of reflectivity than the conventional 25 ohm product, so the etched lines are lighter and the visual effect is better.

Example ten:

the optical property test data of examples one to six are summarized in comparison with the optical property test data of conventional structure ITO products one to four as follows:

table 4 summary of optical property testing

As can be seen from table 4, compared with the conventional ITO products with low sheet resistance, the ITO products prepared in the first to sixth embodiments of the present invention have significantly improved optical properties, including increased transmittance, decreased transmittance b, significantly reduced yellowing of the transmissive ITO products, reduced reflectance difference (reduced etching lines), closer reflection b to 0, and significantly reduced bluing of the reflective ITO products.

The above embodiments are illustrative of the present invention, and are not intended to limit the present invention, and any simple modifications of the present invention are within the scope of the present invention.