阅读说明：本技术 激光退火装置 (Laser annealing device ) 是由 金仙株 河载均 苏裕真 于 2018-09-06 设计创作，主要内容包括：本发明提供一种激光退火装置,其包括：激光光源,其放射激光；激光整形部,其接收从所述激光光源放射的激光,并以既定的大小及形态的线光束整形；成像光学系统,其使整形的激光通过后集束,并向退火对象物基板照射；基台,其装载所述基板并使其与基板面平行地在平面上移动,并且,还包括激光补正部,其检查从所述激光光源放射的激光到达至所述基板的激光状态及路径,并根据检查结果补正激光的状态及路径。根据本发明能够补正在激光光源及路径上的光学要素的不稳定性引起的激光的路径或状态的变化,从而,能够准确地在基台上的基板的准确位置进行为激光退火的光照射。(The present invention provides a laser annealing apparatus, comprising: a laser light source that emits laser light; a laser shaping unit that receives the laser beam emitted from the laser light source and shapes the laser beam into a line beam having a predetermined size and shape; an imaging optical system for passing the shaped laser beam, collecting the laser beam, and irradiating the laser beam onto an annealing target substrate; and a base on which the substrate is mounted and which moves on a plane parallel to a substrate surface, and further includes a laser correction unit which checks a state and a path of laser light emitted from the laser light source and reaching the substrate, and corrects the state and the path of the laser light based on a result of the check. According to the present invention, it is possible to compensate for a change in the path or state of the laser beam due to instability of the laser light source and the optical elements on the path, and thus it is possible to perform irradiation of the laser beam for annealing accurately at an accurate position of the substrate on the base.)

1. A laser annealing device, comprising:

a laser light source that emits laser light;

a laser shaping unit that receives the laser beam emitted from the laser light source and shapes the laser beam into a line beam having a predetermined size and shape;

an imaging optical system for passing the shaped laser beam, collecting the laser beam, and irradiating the laser beam onto an annealing target substrate;

a base on which the substrate is mounted and which moves on a plane parallel to a substrate surface; and

and a laser correction unit that inspects a state and a path of the laser beam emitted from the laser light source reaching the substrate and corrects the state and the path of the laser beam based on the inspection result.

2. The laser annealing device according to claim 1,

the laser correction unit includes:

a 1 st inspection and adjustment device located between the laser light source and the laser shaping unit;

and 2 nd inspection and adjustment means located between the laser shaping section and the imaging optical system.

3. The laser annealing device according to claim 2,

the laser correction part includes at least one of a device part for checking and correcting the shape and size of the laser and a device part for checking and correcting the optical path.

4. The laser annealing device according to claim 2,

the laser correction unit includes at least one of a device unit for moving the optical axis in parallel and a device unit for changing the reflection angle.

5. The laser annealing device according to claim 2,

the 1 st inspection and adjustment device is formed with a 1 st mirror and a 2 nd mirror which are angularly adjusted by a driving device, and is formed with an optical detector which generates a signal for inspecting and correcting the form and size of the laser beam transmitted through the 1 st mirror, and a 1 st optical analyzer which generates a signal for inspecting and correcting the optical path of the laser beam and adjusts the angles of the 1 st mirror and the 2 nd mirror,

the 2 nd inspection and adjustment device generates a signal for inspecting and correcting at least one of the shape, size, light uniformity, and position of the laser beam formed in the form of a line beam by the laser shaping unit.

6. A laser annealing device, comprising:

a laser light source that emits laser light;

1 st inspection and adjustment device for inspecting and correcting the shape and size of the laser beam or inspecting and correcting the optical path;

a laser shaping unit which receives the laser beam passing through the inspection and adjustment device 1 and shapes the laser beam into a line beam having a predetermined size and shape;

a 2 nd inspection and adjustment device for moving the optical axis of the laser beam passing through the laser beam shaping unit in parallel or changing the reflection angle; and

and an imaging optical system for converging the laser beam passing through the 2 nd inspection and adjustment device and irradiating the laser beam onto a substrate as an annealing object.

7. The laser annealing device according to claim 6,

further comprising: and a base for loading the substrate and moving the substrate in parallel with a substrate surface on a plane.

8. The laser annealing device according to claim 6,

further comprising: and a processing device for controlling the operation of the laser light source, the 1 st inspection and adjustment device, the 2 nd inspection and adjustment device, and the base, or a controller or control device corresponding to the processing device.

9. The laser annealing apparatus according to claim 8,

the 1 st inspection and adjustment device includes:

a 1 st mirror and a 2 nd mirror which can be angularly adjusted by a drive device;

a photodetector for generating a signal for inspecting and correcting the form and size of the laser beam; and

and a 1 st optical analyzer for generating a signal for checking and correcting a light path of the laser light and adjusting angles of the 1 st mirror and the 2 nd mirror.

10. The laser annealing apparatus according to claim 9,

the 2 nd inspection and adjustment device includes:

a 2 nd optical analyzer for receiving a part of the laser beam outputted in the form of a line beam by the laser beam shaping unit through a beam splitter and generating a signal for checking and correcting at least one of the form, size, optical uniformity, and position of the laser beam; and

and a focusing lens disposed at the tip of the 2 nd optical analyzer on an optical path to focus the laser beam.

Technical Field

The present invention relates to a laser annealing apparatus for laser annealing a semiconductor substrate or the like, and more particularly, to a laser annealing apparatus capable of solving the problems of instability of laser light and irradiation displacement during laser annealing.

Background

Annealing is one of heat treatment methods for a processing object, and in the field of semiconductors and display devices, annealing generally refers to a processing method for uniformly distributing or activating implanted impurities by rapid heating and slow cooling heat treatment, or for use in applications such as semiconductor crystal defect elimination.

However, recently, a laser annealing method has been developed and used in which the temperature is rapidly raised in a short time and energy is concentrated in a limited place such as a specific region of the object or a thin surface layer, thereby reducing the heat load on the entire substrate and sufficiently uniformly performing the heat treatment on the object region.

In general, laser annealing is performed by converting a laser beam into a line beam form and scanning the line beam to a target processing region.

In the above-described scanning, a method of moving the object in a linear manner on a horizontal plane on the substrate placement frame is often used when the object is scanned with the line beam in a state where the laser beam irradiation position is fixed, as compared with a method of moving the laser beam.

A typical laser annealing is generally used in a process of forming an amorphous silicon layer on a substrate thinly, implanting impurities, and forming the amorphous silicon layer into a polycrystalline silicon or single crystal silicon layer by laser irradiation in a liquid crystal display device or an organic electroluminescent device.

In a conventional laser annealing apparatus, a laser beam is incident on the surface of a target substrate through a predetermined path, and the target is moved while being fixed to a chuck on a rack that moves in the x-axis and y-axis directions on a plane, thereby scanning the entire surface.

The scanning of the entire area of the semiconductor wafer with the laser beam is performed substantially as in the conceptual diagram of fig. 1. That is, the Line Beam (LB) of a predetermined width is moved in one direction (x-axis direction) from one side of the wafer 15 in a direction perpendicular to the line, as indicated by an arrow, so as to pass over the upper surface of the wafer, and is moved in the other direction (y-axis direction) perpendicular to the one direction in line width, and then, this time, is moved in the opposite direction, so as to pass over the upper surface of the wafer. By repeating the above-described method, the line beam is passed over the entire area of the wafer, and the entire area of the wafer can be annealed.

When performing a line beam scan on the wafer 15, as shown in fig. 2, the surface layer of the wafer 15 is heated to a predetermined temperature in a predetermined region 15' through which the line beam LB passes, and then slowly cooled, thereby performing reforming such as crystallization, homogenization, impurity activation, and the like on the surface layer material.

Fig. 3 is a conceptual diagram schematically showing the configuration of an example of a conventional laser annealing apparatus.

The laser annealing device is formed by the following structure: a laser oscillator 4 coupled to a Laser Diode (LD) 1 for excitation and a fiber 2 and generating a continuous oscillation laser beam 3; a shutter 5 that performs opening/closing of the laser 3; a continuously variable Neutral Density (ND) filter 6 for adjusting the transmittance of the energy of the laser light 3; an electro-optical (EO) modulator 7 for realizing pulsing of the laser light 3 output from the laser oscillator 4 and temporal modulation of the energy; a polarizing beam splitter 8; a beam expander (beam reducer) 9; a beam homogenizer 10 for shaping the laser beam 3 into a beam of a relatively thin and long shape; a rectangular slit or mask 11 for forming the shaped laser beam 3 into a predetermined size; and an imaging lens 16 for imaging the mask 11 on the substrate 15 which is mounted on the XY stage 14 and then moved in parallel.

The laser light 3 oscillated from the laser oscillator 4 is opened/closed by a shutter 5. That is, the laser oscillator 4 is set to always oscillate the laser light 3 at a predetermined output power, the shutter 5 is normally closed, and the laser light 3 is blocked by the shutter 5. Only when the laser beam 3 is irradiated, the shutter 5 is opened to output the laser beam 3. However, when the laser light 3 is turned on/off by turning on/off the excitation laser diode 1, there is a possibility that the stability of the laser output is affected.

The laser light 3 passing through the shutter 5 is transmitted through a continuously variable transmittance neutral density filter 6 for adjusting power and enters an EO modulator 7. The EO modulator 7 supplies a voltage to a crystal or pockels cell (pockels cell) by a driving program (not shown), rotates the polarization direction of the laser light 3 transmitted through the crystal, passes the P-polarized light component directly through a polarizing beam splitter 8 placed behind the crystal, and deflects the S-polarized light component by 90 °, thereby turning on/off the laser light 3.

That is, the laser beam 3 is modulated by alternately supplying a voltage V1 for rotating the polarization direction of the laser beam 3 so that the laser beam is incident in P-polarized light to the polarization beam splitter 8 and a voltage V2 for rotating the polarization direction of the laser beam 3 so that the laser beam is incident in S-polarized light, and an arbitrary voltage between V1 and V2 is supplied to set an arbitrary output. In the above example, the construction in which the pockels cell and the polarizing beam splitter 8 are combined as the EO modulator 7 has been described, but various polarizing elements may be used instead of the polarizing beam splitter.

As can be understood from the above description, the configurations of the laser diode 1 to the polarization beam splitter 8 form a broad laser light source.

The laser light 3 emitted from the laser light source is incident on the beam homogenizer 10 after the beam diameter is adjusted by the beam expander or beam reducer 9 for adjusting the beam diameter.

The beam having a relatively long and narrow shape obtained by the beam homogenizer 10 is a laser beam having a more accurate predetermined size passing through the mask 11, and is condensed by the imaging lens 16 and irradiated onto the wafer 15 mounted on the wafer stage 14.

Here, the laser beam shaped into a relatively thin and long shape by the beam homogenizer 10 may be converted into parallel light by a relay lens or a tube lens, and then projected as a long and thin line beam on the substrate by the imaging lens 16. At this time, even if the distance between the relay lens and the imaging lens is changed, the size or energy density of the long and thin beam projected on the substrate is not changed. Therefore, a tube lens is provided, and an observation optical system, an energy monitoring optical system, and the like are inserted between the tube lens and the imaging lens 16 as necessary.

However, the above-described conventional laser annealing apparatus has the following problems: due to unstable factors such as the laser light source, the optical system components themselves on the laser traveling path, or the coupling structure, optical axis movement or angular distortion occurs, so that the irradiation position where the laser reaches the substrate is fluctuated, and the size or form of the laser changes, causing a variation in the annealing process.

Disclosure of Invention

Technical problem to be solved

In order to solve the problems of the conventional laser annealing apparatus described above, the present invention provides a laser annealing apparatus having a configuration capable of detecting and correcting a change in a light path or a change in the size or shape of a laser beam due to an instability of a laser light source or an optical element in the light path.

Technical scheme for solving problems

In order to solve the above-mentioned problems, the present invention provides a laser annealing apparatus including: a laser light source that emits laser light; a laser shaping unit that receives the laser beam emitted from the laser light source and shapes the laser beam into a line beam having a predetermined size and shape; an imaging optical system for passing the shaped laser beam, collecting the laser beam, and irradiating the laser beam onto an annealing target substrate; a base on which the substrate is mounted and which moves on a plane parallel to a substrate surface; and a laser correction unit that inspects a state and a path of the laser beam emitted from the laser light source reaching the substrate and corrects the state and the path of the laser beam based on the inspection result.

In one embodiment, the laser correction unit includes: a 1 st inspection and adjustment device located between the laser light source and the laser shaping unit; and 2 nd inspection and adjustment means located between the laser shaping section and the imaging optical system.

In one embodiment, the laser correction part includes at least one of a device part for checking and correcting the form and size of the laser and a device part for checking and correcting the optical path. The laser correction unit includes at least one of a device unit for moving the optical axis in parallel and a device unit for changing the reflection angle. The above-mentioned device part may correspond to at least a part of the constituent parts of the 1 st inspection and adjustment device or the 2 nd inspection and adjustment device.

In one embodiment, the 1 st inspection and adjustment device is formed with a 1 st mirror and a 2 nd mirror which are angularly adjusted by a driving device, and is formed with an optical detector which generates a signal for inspecting and correcting the form and size of the laser beam transmitted through the 1 st mirror, and a 1 st optical analyzer which generates a signal for inspecting and correcting the optical path of the laser beam and adjusts the angles of the 1 st mirror and the 2 nd mirror.

In one embodiment, the 2 nd inspection and adjustment device generates a signal for inspecting and correcting at least one of a shape, a size, a light uniformity, and a position of the laser beam formed in the form of a line beam by the laser shaping unit.

Another aspect of the present invention to solve the above problems is a laser annealing apparatus including: a laser light source that emits laser light; 1 st inspection and adjustment device for inspecting and correcting the shape and size of the laser beam or inspecting and correcting the optical path; a laser shaping unit which receives the laser beam passing through the inspection and adjustment device 1 and shapes the laser beam into a line beam having a predetermined size and shape; a 2 nd inspection and adjustment device for moving the optical axis of the laser beam passing through the laser beam shaping unit in parallel or changing the reflection angle; and an imaging optical system for converging the laser beam passing through the 2 nd inspection and adjustment device and irradiating the laser beam onto a substrate as an annealing object.

In one embodiment, the method further comprises: and a base for loading the substrate and moving the substrate in parallel with a substrate surface on a plane.

In one embodiment, the method further comprises: and a processing device for controlling the operation of the laser light source, the 1 st inspection and adjustment device, the 2 nd inspection and adjustment device, and the base, or a controller or control device corresponding to the processing device.

In one embodiment, the 1 st inspection and adjustment apparatus comprises: a 1 st mirror and a 2 nd mirror which can be angularly adjusted by a drive device; a photodetector for generating a signal for inspecting and correcting the form and size of the laser beam; and a 1 st optical analyzer for generating a signal for checking and correcting a light path of the laser light and adjusting angles of the 1 st mirror and the 2 nd mirror.

In one embodiment, the 2 nd checking and adjusting device comprises: a 2 nd optical analyzer for receiving a part of the laser beam outputted in the form of a line beam by the laser beam shaping unit through a beam splitter and generating a signal for checking and correcting at least one of the form, size, optical uniformity, and position of the laser beam; and a focusing lens disposed at the front end of the 2 nd optical analyzer on the optical path to focus the laser beam.

In order to solve the above-mentioned problems, the present invention provides a laser annealing apparatus including a laser light source for emitting a laser beam, a laser shaping unit for receiving the laser beam emitted from the laser light source and shaping the laser beam into a line beam having a predetermined size and shape, an imaging optical system for passing and collecting the shaped laser beam and irradiating the shaped laser beam onto an object substrate to be annealed, and a base (rack) for mounting the substrate and moving the substrate in a plane parallel to a substrate surface, the laser annealing apparatus further including: and a laser correction unit (inspection and adjustment unit) for inspecting the state and path of the laser beam emitted from the laser light source and reaching the substrate, and correcting the state and path of the laser beam based on the inspection result.

In one embodiment, the laser correction portion may be formed to include a device portion for checking and correcting a shape and size of the laser light and/or a device portion for checking and correcting a light path, and the device portion for checking and correcting a light path may be formed to include at least one of a device portion for moving an optical axis in parallel and a device portion for changing a reflection angle.

In one embodiment, the laser correction portions are distributed on a path from the laser light source to the laser shaper and a path from the laser shaper to the imaging lens.

ADVANTAGEOUS EFFECTS OF INVENTION

If the laser annealing device is used, the following advantages are achieved: the variation of the path or state of the laser beam due to the instability of the laser light source and the optical elements on the path can be checked and corrected, and the positioning of the substrate on the base can be effectively controlled, thereby improving the performance and reliability of laser annealing.

Drawings

FIG. 1 is a conceptual plan view showing an example of a manner in which surface annealing of a semiconductor wafer is performed by a laser in the form of a line beam;

FIG. 2 is a conceptual cross-sectional view for illustrating surface layer reformation in a region of a semiconductor wafer on which laser annealing is performed;

FIG. 3 is a conceptual diagram showing a configuration of an example of a conventional laser annealing apparatus;

fig. 4 is a conceptual diagram showing the configuration of a laser annealing apparatus according to an embodiment of the present invention.

Detailed Description

The present invention will be described in more detail below by way of detailed embodiments of the invention with reference to the accompanying drawings.

Fig. 4 is a conceptual diagram showing a configuration of a laser annealing apparatus according to an embodiment of the present invention.

Referring to fig. 4, the present embodiment is formed by the following structure as in the conventional case: a laser light source 110 that emits laser light; a laser correction unit for inspecting the state and path of the laser beam emitted from the laser source 110 and reaching the substrate 115 and correcting the state and path of the laser beam based on the inspection result; a laser shaping unit 140 that receives the laser beam emitted from the laser light source 110 and passing through the 1 st correction unit of the laser correction unit, shapes the laser beam with a predetermined size and shape, and transmits the shaped laser beam to the 2 nd correction unit of the laser correction unit; an imaging optical system 170 that irradiates the annealing target substrate 115 with the shaped laser beam after passing through and focusing the laser beam; and a base 180 for mounting the substrate 115 and moving on a plane in parallel with the substrate surface. Here, the 1 st correcting unit corresponds to the 1 st inspecting and adjusting device 120 described later, and the 2 nd correcting unit corresponds to the 2 nd inspecting and adjusting device 160 described later.

The laser light source 110 is basically formed by including a laser oscillator, a shutter, and the like, and may be formed with a member for adjusting the power of a laser beam actively or passively emitted as in the conventional example of fig. 3.

The laser beam from the laser source 110 has a wavelength with a high energy absorption rate in the amorphous silicon thin film or the polysilicon thin film to be annealed, and more preferably, an Ar laser, a Kr laser and its 2 Nd harmonic, an Nd: YAG laser, an Nd: YVO4 laser, and a Nd: YLF laser, the 2 Nd harmonic and the 3 rd harmonic, and the like. For example, it is preferable to use a Laser Diode (LD) excitation type Nd: the 2 Nd harmonic wavelength of YAG laser light 532nm or the 2 Nd harmonic wavelength (wavelength 532nm) of Nd: YVO4 laser light, and the laser light generated from the oscillator has a Gaussian energy distribution from the center of the circle to the outer contour. In this embodiment, the laser light source uses an LD excited DPSS (pulsed laser state) laser that continuously oscillates Nd, i.e., the 2 Nd harmonic or the 3 rd harmonic of YVO4 laser.

In this embodiment, the laser beam emitted from the laser light source 110 includes the 1 st inspection and adjustment device 120 that inspects the state of the laser beam and adjusts the optical path of the angle adjustment method.

The 1 st inspection and adjustment device 120 includes a 1 st mirror 121 and a 2 nd mirror 127 having a function of a part of a beam splitter, the mirrors are angularly adjusted by a motor not shown, and the laser beam reflected therefrom is moved on the x-axis of the substrate by the 1 st mirror 121 and is moved on the y-axis of the substrate by the 2 nd mirror 127. The mirror reflects most of the light of about 99% to transmit 1% or less of the light, and the laser beam transmitted from the 1 st mirror 121 is projected to the photodetector 123 for inspecting the laser beam state such as the size and shape of the laser beam, and the laser beam transmitted from the 2 nd mirror 127 is projected to the 1 st optical analyzer 129.

The photodetector 123 senses the laser state, generates an adjustment signal in a feedback manner, and adjusts the laser state by using an element for adjusting the size or shape of the laser light, such as a slit or a mask, in the laser light source 110.

The 1 st optical analyzer 129 receives the laser beam that has passed through the 2 nd mirror 127 after the path adjustment from the 1 st mirror 121, confirms the result of the 1 st path adjustment, generates an adjustment signal in a feedback manner, and corrects and adjusts the driving amount of the motor of the 1 st mirror 121 by a dedicated controller not shown. Since the angle change of the 2 nd mirror can be measured if the minute positional change is detected by the laser beam transmitted through the 2 nd mirror, the driving amount of the motor for adjusting the 2 nd mirror 127 can be corrected, depending on the case.

Thus, the 1 st inspection and adjustment device 120 can adjust the state of the laser beam, the position of the laser beam irradiated on the substrate, and the laser beam path.

In the present embodiment, a laser power adjuster 125 is provided between the 1 st mirror 121 and the 2 nd mirror 127 of the 1 st inspection and adjustment device 120 to sense the laser output or directly adjust the laser output, or the laser output power is adjusted by another adjustment device in the laser light source 110 in a feedback manner after generating an adjustment signal.

The laser beam passing through the 1 st inspection and adjustment device 120 is reflected by the 3 rd mirror 130 and projected to the laser beam shaping unit 140. Here, the laser shaping unit 140 is configured by forming a beam shaper 141 and a beam mask 143 to be coupled in series.

The beam shaper 141 is an optical element that shapes the laser light into a line beam having a relatively thin and long shape. Here, the slender and long shape is to be interpreted broadly to include a linear shape, a straight quadrangle shape, an oval shape, or an oblong shape. In general, a laser beam of a gas laser or a solid laser is a circular laser having a gaussian energy distribution, and is not suitable for laser annealing in its original state. If the oscillator output power is sufficiently large, the beam diameter can be sufficiently enlarged to obtain a substantially uniform energy distribution by taking only a relatively uniform portion in the central portion, but most of the energy is wasted by discarding the peripheral portion of the beam. To solve the above-mentioned drawback, a gaussian profile is converted into a uniform profile (flat-top profile) by means of a beam shaper 141.

To form the beam shaper 141, a combination of a powell lens and a cylindrical lens, a kaleidoscope, a diffractive optical element, a multi-lens (or cylindrical lens) array, and a cylindrical lens may be used. As described above, if the oscillator having a sufficiently large energy is used, the beam mask having the slit with the straight rectangular opening, which is obtained by sufficiently enlarging the beam diameter, can be used alone, but here, the beam shaper 141 is supplemented when the beam mask 143 is used, and the peripheral portion of the line beam passing through the beam shaper 141 is removed, so that the line beam is formed into a more uniform and predetermined shape. The opening slit of the beam mask 143 is an aperture or slit such as a rectangular, linear, elliptical, or oblong.

Since the cylindrical lens is used as the beam shaper 141 regardless of the uniformity of the energy density, and the laser beam is compressed only in one direction, the gaussian distribution of the original beam state is formed in the direction orthogonal to the one direction as the short direction, and the center portion may be cut out as necessary.

The laser beam in the form of a linear beam passing through the laser beam shaping unit 140 passes through the beam splitter 150 having a high transmittance and a very small reflectance of about 1%, is projected onto the image forming lens system 170, and is converged by the image forming lens system 170 to reach the substrate 115. In this state, the substrate 115 is fixed to a rack or a chuck of the base 180 that can move in the x-axis and y-axis directions, and moves on a plane, so that the entire surface of the substrate is annealed.

The line beam reflected from the beam splitter 150 is projected toward the 2 nd inspection and adjustment device 160. The 2 nd optical analyzer 162 of the 2 nd inspection and adjustment device 160 inspects the line beam condensed by the other condensing lens 161 to detect whether or not the line beam has an appropriate form, light intensity distribution, or energy distribution, and if there is a problem as a result, the operator adjusts the laser shaping unit 140 or directly generates a signal to perform feedback type adjustment in which the lens arrangement of the beam shaper 141 (beam homogenizer) forming the laser shaping unit 140 is adjusted in real time by a driving device (not shown).

Here, whether the line beam is irradiated to an appropriate position on the substrate or not may be checked), and if necessary, adjustment of the optical path by a feedback method in which the optical path is adjusted 2 times by moving the mirror in the 1 st inspection and adjustment device 120 is performed.

In the above description, the apparatus for performing the adjustment in the feedback manner is a system in which an operation signal reflecting the result of the inspection by an inspection apparatus functioning as a sensor, such as a photodetector, a 1 st optical analyzer, a 2 nd optical analyzer, etc., is transmitted to a computer 190 or various controllers connected wirelessly or by wire, and a driving apparatus, such as a motor (not shown), is driven by the computer 119 or the controller (controller) in the form of an electric signal to operate the angle of the 1 st mirror and the 2 nd mirror that affect the optical path, the lens arrangement distance in the beam shaper, etc., and the adjustment manner described above is general, and thus, a more detailed description thereof will be omitted.

In addition, the processing device of the computer 190 may use a controller or a control device, which is formed with a processor and a memory, and the processor controls the operation of the laser annealing device through a program or a software module stored in the memory. The processor can be connected to the driving device, the sensor, the 1 st inspection and adjustment device, the 2 nd inspection and adjustment device, the 1 st optical analyzer, the 2 nd optical analyzer, the driving device of the base station, and the like through the sub-communication system.

In the above description, the 1 st and 2 nd inspection and adjustment devices are separately provided and operated on the optical path, but may be integrally installed and operated, and a part thereof may be removed.

The present invention has been described above by way of the limited embodiments, but the present invention is only described as an example to facilitate understanding of the present invention, and the present invention is not limited to the specific embodiments. That is, various modifications and application examples can be made by a person having ordinary skill in the art of the present invention based on the present invention, and the modifications and application examples described above belong to the scope of the appended claims.