阅读说明：本技术 硅控整流电路及方法 (Silicon controlled rectifier circuit and method ) 是由 吴岩松 于 2020-11-18 设计创作，主要内容包括：本发明属于可控硅技术领域,公开了一种硅控整流电路及方法。硅控整流电路包括整流模块、控制模块及驱动模块,控制模块采集整流模块中各个硅控整流管第二端与第三端之间的电压,并根据各个硅控整流管第二端与第三端之间的电压生成驱动信号；驱动模块接收驱动信号,并根据驱动信号控制整流模块的硅控整流管。本发明中,控制模块通过检测整流模块两端电压而非电网线电压,并根据检测到的整流模块两端的电压驱动整流模块,本发明在控制上灵活,上电时不需要使用上电缓冲电阻等,不占用空间减少成本；同时检测整流模块两端电压而非电网线电压,减少与电网相连电阻串数量实现减小占用空间降低成本的目的。(The invention belongs to the technical field of silicon controlled rectifiers, and discloses a silicon controlled rectifier circuit and a method. The silicon-controlled rectifier circuit comprises a rectifier module, a control module and a drive module, wherein the control module acquires voltage between the second end and the third end of each silicon-controlled rectifier tube in the rectifier module and generates a drive signal according to the voltage between the second end and the third end of each silicon-controlled rectifier tube; the driving module receives the driving signal and controls the silicon controlled rectifier tube of the rectifier module according to the driving signal. In the invention, the control module detects the voltage at two ends of the rectifying module instead of the voltage of the power grid line and drives the rectifying module according to the detected voltage at two ends of the rectifying module, so that the control method is flexible in control, does not need to use a power-on buffer resistor and the like during power-on, does not occupy space and reduces cost; and meanwhile, the voltage at two ends of the rectifier module is detected instead of the voltage of the power grid line, so that the number of resistor strings connected with the power grid is reduced, and the purposes of reducing occupied space and reducing cost are achieved.)

1. A silicon controlled rectifier circuit, comprising: the rectifier comprises a rectifier module, a control module and a drive module, wherein the control module is respectively connected with the rectifier module and the drive module, the rectifier module and the control module are both connected with the input end of a power grid, the rectifier module comprises at least one silicon controlled rectifier tube, the first end of each silicon controlled rectifier tube is connected with the drive module, the second end of each silicon controlled rectifier tube is connected with the input end of the power grid, the third end of each silicon controlled rectifier tube is connected with a bus, wherein,

the control module is used for acquiring voltage between the second end and the third end of each silicon controlled rectifier tube in the rectifier module and generating a driving signal according to the voltage between the second end and the third end of each silicon controlled rectifier tube;

and the driving module is used for receiving the driving signal and controlling a silicon-controlled rectifier tube of the rectifying module according to the driving signal.

2. The SCR circuit of claim 1, wherein the control module is configured to collect a voltage between the second end of each SCR in the rectifying module and the bus, and generate the driving signal according to the voltage between the second end of each SCR and the bus.

3. The silicon controlled rectifier circuit of claim 1 wherein the ground terminals of the control module and the driver module are connected to the bus.

4. The SCR circuit of claim 1 wherein the first terminal of each SCR is a control terminal, the second terminal of each SCR is an anode, and the third terminal of each SCR is a cathode.

5. The silicon controlled rectifier circuit of claim 1 wherein the control module comprises a processing unit and a conditioning unit; wherein the content of the first and second substances,

the conditioning unit is used for conditioning the power grid voltage input by the power grid input end and sending a conditioned voltage signal to the processing unit;

and when the power supply is started slowly, the processing unit is used for generating a driving signal containing a phase-shifting signal according to the received conditioned voltage signal and sending the driving signal to the driving module.

6. The silicon controlled rectifier circuit of claim 1 wherein the rectifier module comprises a silicon controlled rectifier bridge circuit, the silicon controlled rectifier bridge circuit being connected to the grid input; wherein the content of the first and second substances,

the silicon controlled rectifier bridge circuit is used for receiving the three-phase alternating current input by the power grid input end and rectifying the three-phase alternating current to output direct current;

the silicon controlled rectifier bridge circuit is also used for receiving a driving signal of the driving module and controlling the direct current output according to the driving signal.

7. The silicon controlled rectifier circuit of claim 6 wherein the silicon controlled rectifier bridge circuit comprises a first rectifier bridge, a second rectifier bridge, and a third rectifier bridge; wherein the content of the first and second substances,

the first rectifier bridge is connected with a first phase of the three-phase alternating-current power supply, the first rectifier bridge is connected with the second rectifier bridge, the second rectifier bridge is connected with a second phase of the three-phase alternating-current power supply, the second rectifier bridge is connected with the third rectifier bridge, the third rectifier bridge is connected with a third phase of the three-phase alternating-current power supply, and the third rectifier bridge is connected with the driving module.

8. The silicon controlled rectifier circuit of claim 7 wherein the first rectifier bridge comprises a first silicon controlled rectifier and a first diode, the second rectifier bridge comprises a second silicon controlled rectifier and a second diode, and the third rectifier bridge comprises a third silicon controlled rectifier and a third diode; wherein the content of the first and second substances,

the anode of the first controllable silicon is connected with the cathode of the first diode, the anode of the first controllable silicon is connected with the first phase of the three-phase alternating-current power supply, the cathode of the first controllable silicon is connected with the second rectifier bridge, and the anode of the first diode is connected with the second rectifier bridge;

the anode of the second controllable silicon is connected with the cathode of the second diode, the anode of the second controllable silicon is connected with the second phase of the three-phase alternating-current power supply, the cathode of the second controllable silicon is connected with the third rectifier bridge, and the anode of the second diode is connected with the third rectifier bridge;

the anode of the third controllable silicon is connected with the cathode of the third diode, the anode of the third controllable silicon is connected with the third phase of the three-phase alternating-current power supply, the cathode of the third controllable silicon is connected with the direct-current bus circuit, and the anode of the third diode is connected with the direct-current bus circuit.

9. The silicon controlled rectifier circuit according to any one of claims 1 to 8, wherein the driving module is any one of a push-pull triode circuit, a push-pull MOS (metal oxide semiconductor) transistor circuit and a constant current source circuit.

10. A silicon controlled rectifier circuit according to any one of claims 1 to 9, wherein the silicon controlled rectifier circuit comprises: the silicon controlled rectifying method comprises the following steps:

the control module collects the voltage between the second end and the third end of each silicon controlled rectifier tube in the rectifier module and generates a driving signal according to the voltage between the second end and the third end of each silicon controlled rectifier tube;

the driving module receives the driving signal and controls a silicon-controlled rectifier tube of the rectifier module according to the driving signal.

Technical Field

The invention relates to the technical field of silicon controlled rectifiers, in particular to a silicon controlled rectifier circuit and a method.

Background

There are generally two thyristor drive schemes: firstly, detecting the voltage of a power grid line, carrying out software wave generation by using a processor such as an MCU (microprogrammed control unit), and directly driving a controlled silicon after power amplification; and secondly, detecting the voltage at two ends of the controlled silicon, processing the voltage by using a hardware circuit, then sending waves by using hardware, and directly driving the controlled silicon after power amplification. When the scheme of using processors such as MCU (microprogrammed control Unit) for software wave generation is used for detecting the voltage of the power grid line, at least 4 series of resistor strings are required to be connected with the power grid, the occupied board area is large, and the cost is high; the other hardware wave-sending scheme without using a processor such as an MCU (microprogrammed control unit) and the like usually needs to detect the voltage at two ends of the controllable silicon, but the scheme is not as flexible as the software wave-sending scheme, needs to be provided with an electric buffer resistor, and is large in occupied space and high in cost.

The above is only for the purpose of assisting understanding of the technical aspects of the present invention, and does not represent an admission that the above is prior art.

Disclosure of Invention

The invention mainly aims to provide a silicon controlled rectifier circuit and a method, and aims to solve the technical problems of inflexibility, large occupied space and high cost of the existing silicon controlled rectifier driving.

In order to achieve the above object, the present invention provides a silicon controlled rectifier circuit, including: the rectifier comprises a rectifier module, a control module and a drive module, wherein the control module is respectively connected with the rectifier module and the drive module, the rectifier module and the control module are both connected with the input end of a power grid, the rectifier module comprises at least one silicon controlled rectifier tube, the first end of each silicon controlled rectifier tube is connected with the drive module, the second end of each silicon controlled rectifier tube is connected with the input end of the power grid, the third end of each silicon controlled rectifier tube is connected with a bus, wherein,

the control module is used for acquiring voltage between the second end and the third end of each silicon controlled rectifier tube in the rectifier module and generating a driving signal according to the voltage between the second end and the third end of each silicon controlled rectifier tube;

and the driving module is used for receiving the driving signal and controlling a silicon-controlled rectifier tube of the rectifying module according to the driving signal.

Optionally, the control module is further configured to collect a voltage between a second end of each scr in the rectifier module and the bus, and generate a driving signal according to the voltage between the second end of each scr and the bus.

Optionally, the ground terminals of the control module and the driving module are connected to the bus.

Optionally, the first end of each of the silicon controlled rectifiers is a control end, the second end of each of the silicon controlled rectifiers is an anode, and the third end of each of the silicon controlled rectifiers is a cathode.

Optionally, the control module comprises a processing unit and a conditioning unit; wherein the content of the first and second substances,

the conditioning unit is used for conditioning the power grid voltage input by the power grid input end and sending a conditioned voltage signal to the processing unit;

and when the power supply is started slowly, the processing unit is used for generating a driving signal containing a phase-shifting signal according to the received conditioned voltage signal and sending the driving signal to the driving module.

Optionally, the rectifier module includes a silicon controlled rectifier bridge circuit, and the silicon controlled rectifier bridge circuit is connected to the input end of the power grid; wherein the content of the first and second substances,

the silicon controlled rectifier bridge circuit is used for receiving the three-phase alternating current input by the power grid input end and rectifying the three-phase alternating current to output direct current;

the silicon controlled rectifier bridge circuit is also used for receiving a driving signal of the driving module and controlling the direct current output according to the driving signal.

Optionally, the silicon controlled rectifier bridge circuit includes a first rectifier bridge, a second rectifier bridge, and a third rectifier bridge; wherein the content of the first and second substances,

the first rectifier bridge is connected with a first phase of the three-phase alternating-current power supply, the first rectifier bridge is connected with the second rectifier bridge, the second rectifier bridge is connected with a second phase of the three-phase alternating-current power supply, the second rectifier bridge is connected with the third rectifier bridge, the third rectifier bridge is connected with a third phase of the three-phase alternating-current power supply, and the third rectifier bridge is connected with the driving module.

Optionally, the first rectifier bridge includes a first thyristor and a first diode, the second rectifier bridge includes a second thyristor and a second diode, and the third rectifier bridge includes a third thyristor and a third diode; wherein the content of the first and second substances,

the anode of the first controllable silicon is connected with the cathode of the first diode, the anode of the first controllable silicon is connected with the first phase of the three-phase alternating-current power supply, the cathode of the first controllable silicon is connected with the second rectifier bridge, and the anode of the first diode is connected with the second rectifier bridge;

the anode of the second controllable silicon is connected with the cathode of the second diode, the anode of the second controllable silicon is connected with the second phase of the three-phase alternating-current power supply, the cathode of the second controllable silicon is connected with the third rectifier bridge, and the anode of the second diode is connected with the third rectifier bridge;

the anode of the third controllable silicon is connected with the cathode of the third diode, the anode of the third controllable silicon is connected with the third phase of the three-phase alternating-current power supply, the cathode of the third controllable silicon is connected with the direct-current bus circuit, and the anode of the third diode is connected with the direct-current bus circuit.

Optionally, the driving module is any one of a push-pull triode circuit, a push-pull MOS transistor circuit, and a constant current source circuit.

In addition, to achieve the above object, the present invention further provides a scr method based on the scr circuit as described above, the scr circuit including: the silicon controlled rectifying method comprises the following steps:

the control module collects the voltage between the second end and the third end of each silicon controlled rectifier tube in the rectifier module and generates a driving signal according to the voltage between the second end and the third end of each silicon controlled rectifier tube;

the driving module receives the driving signal and controls a silicon-controlled rectifier tube of the rectifier module according to the driving signal.

The invention provides a silicon controlled rectifier circuit, which comprises: the control module is respectively connected with the rectifying module and the driving module, the rectifying module and the control module are both connected with a power grid input end, the rectifying module comprises at least one silicon-controlled rectifier tube, the first end of each silicon-controlled rectifier tube is connected with the driving module, the second end of each silicon-controlled rectifier tube is connected with the power grid input end, and the third end of each silicon-controlled rectifier tube is connected with a bus, wherein the control module is used for collecting the voltage between the second end and the third end of each silicon-controlled rectifier tube in the rectifying module and generating a driving signal according to the voltage between the second end and the third end of each silicon-controlled rectifier tube; and the driving module is used for receiving the driving signal and controlling a silicon-controlled rectifier tube of the rectifying module according to the driving signal. Compared with the existing control unit MCU which detects the voltage of a power grid, judges, emits waves and directly drives a rectification module after passing through a power amplification circuit, in the invention, the control module detects the voltage at two ends of a silicon controlled rectifier tube in the rectification module instead of the voltage of a power grid line and drives the silicon controlled rectifier tube according to the detected voltage at two ends of the silicon controlled rectifier tube in the rectification module, the invention has flexible control, does not need to use a power-on buffer resistor and the like during power-on, does not occupy space and reduces cost; meanwhile, the voltage at two ends of a silicon controlled rectifier tube in the rectifier module is detected instead of the voltage of a power grid line, the number of resistor strings connected with the power grid is reduced, the occupied area of a board is reduced, and the cost is reduced, so that the technical problems of inflexibility, large occupied space and high cost of the existing silicon controlled rectifier drive are solved.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.

FIG. 1 is a functional block diagram of a SCR circuit according to an embodiment of the present invention;

FIG. 2 is a circuit diagram of a silicon controlled rectifier circuit according to an embodiment of the present invention;

FIG. 3 is a schematic diagram of the connection between the ground terminal of the driving module of the control module and the bus according to an embodiment of the SCR circuit of the present invention;

FIG. 4 is a schematic flow chart of a SCR method based on SCR circuits according to a first embodiment of the present invention.

The reference numbers illustrate:

the implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

It should be noted that all the directional indicators (such as up, down, left, right, front, and rear … …) in the embodiment of the present invention are only used to explain the relative position relationship between the components, the movement situation, etc. in a specific posture (as shown in the drawing), and if the specific posture is changed, the directional indicator is changed accordingly.

In addition, the descriptions related to "first", "second", etc. in the present invention are for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.

The invention provides a silicon controlled rectifier circuit.

Referring to fig. 1, in an embodiment of the present invention, the silicon controlled rectifier circuit includes: rectifier module 100, control module 200 and driver module 300, control module 200 respectively with rectifier module 100 with driver module 300 is connected, rectifier module 100 with control module 200 all is connected with the electric wire netting input, rectifier module 100 includes at least one silicon controlled rectifier, each the first end of silicon controlled rectifier with driver module 300 is connected, each the second end of silicon controlled rectifier with the electric wire netting input is connected, each the third end of silicon controlled rectifier is connected with the generating line, wherein,

the control module 200 is configured to collect a voltage between the second end and the third end of each scr in the rectifier module 100, and generate a driving signal according to the voltage between the second end and the third end of each scr;

in this embodiment, the control module 200 may be an MCU processor or other type of processor, which is not limited in this embodiment, for example, the rectifier module 100 may include a silicon controlled rectifier bridge circuit, the silicon controlled rectifier tube is controlled to generate a wave by detecting voltages at two ends of each silicon controlled rectifier tube in the silicon controlled rectifier bridge circuit through the MCU processor, and the control module 200 collects the voltages at two ends of the silicon controlled rectifier tube in the silicon controlled rectifier bridge circuit and generates the driving signal according to the voltages at two ends of the silicon controlled rectifier tube.

It will be readily appreciated that, with continued reference to fig. 1, the control module 200 may include a processing unit 201 and a conditioning unit 202, the conditioning being to amplify, buffer or scale an analog signal or the like to be suitable for input to an analog-to-digital converter, the analog-to-digital converter digitizing the analog signal and sending the digital signal to an MCU processor or other processor in the processing unit 201, or the conditioning unit 202 may directly send the analog signal to the MCU processor or other processor in the processing unit 201 for data processing by the MCU processor or other processor. In this embodiment, the conditioning unit 202 may perform signal processing on the collected voltage between the second end and the third end of each scr. For example, filtering the voltage between the second terminal and the third terminal of each scr, increasing the voltage between the second terminal and the third terminal of each scr, etc., the specific structure of the conditioning circuit and the signal processing method of the conditioning unit 202 are not limited in this embodiment.

The driving module 300 is configured to receive the driving signal and control a silicon controlled rectifier of the rectifier module 100 according to the driving signal. In this embodiment, the driving module 300 is connected to the control terminal of the rectifying module 100, and the driving module 300 receives the driving signal and controls the output voltage of the rectifying module 100 through the control terminal of the rectifying module 100 according to the driving signal. The rectifier module 100 may include a thyristor, and the driving signal may directly control the thyristor, thereby controlling the output voltage. In this embodiment, the control module 200 transmits the driving signal to the driving module 300, and the driving module 300 controls the output voltage of the rectifying module 100 according to the driving signal, wherein the driving module 300 may be any one of a push-pull triode circuit, a push-pull MOS transistor circuit, and a constant current source circuit, and the driving module 300 may also be other types of driving circuits, which is not limited in this embodiment.

It should be noted that the control module 200 transmits the driving signal to the driving module 300, the rectifier module 100 may include a silicon controlled rectifier bridge circuit, the silicon controlled rectifier bridge circuit may include a plurality of thyristors, and the control module 200 may further control the thyristors in the silicon controlled rectifier bridge circuit to switch in a phase shift angle manner, so that the power-on buffer circuit may be omitted, and the cost may be reduced.

It is easy to understand that the rectifier module 100 may further include a dc bus circuit, an input terminal of the dc bus circuit is connected to an output terminal of the scr circuit, the dc bus circuit may include a charging capacitor, and the dc bus circuit receives the dc power output by the scr circuit, converts the dc power into a dc voltage value, and stores the dc voltage value through the charging capacitor.

In this embodiment, the silicon controlled rectifier circuit includes: the rectifying module 100 and the control module 200 are connected to the rectifying module 100 and the driving module 300, the rectifying module 100 and the control module 200 are both connected to a power grid input end, the rectifying module 100 includes at least one silicon controlled rectifier, a first end of each silicon controlled rectifier is connected to the driving module 300, a second end of each silicon controlled rectifier is connected to the power grid input end, and a third end of each silicon controlled rectifier is connected to a bus, wherein the control module 200 is configured to collect a voltage between the second end and the third end of each silicon controlled rectifier in the rectifying module 100, and generate a driving signal according to the voltage between the second end and the third end of each silicon controlled rectifier; the driving module 300 is configured to receive the driving signal and control a silicon controlled rectifier of the rectifier module 100 according to the driving signal. Compared with the existing control unit MCU which detects the voltage of a power grid, judges, emits waves and directly drives the rectification module after passing through the power amplification circuit, in the embodiment, the control module detects the voltage at two ends of a silicon controlled rectifier tube in the rectification module instead of the voltage of a power grid line and drives the silicon controlled rectifier tube according to the detected voltage at two ends of the silicon controlled rectifier tube in the rectification module, the embodiment is flexible in control, and does not need to use an electrifying buffer resistor and the like during electrifying, so that the space is not occupied, and the cost is reduced; meanwhile, the voltage at two ends of a silicon controlled rectifier tube in the rectifier module is detected instead of the voltage of a power grid line, so that the number of resistor strings connected with the power grid is reduced, the occupied area of a board is reduced, and the cost is reduced, thereby solving the technical problems of inflexibility, large occupied space and high cost of the existing silicon controlled rectifier drive.

Further, referring to fig. 2, the control module 200 is configured to collect a voltage between a second end of each scr in the rectifier module 100 and the bus P, and generate a driving signal according to the voltage between the second end of each scr and the bus P.

It should be noted that, the control module 200 collects voltages between the second ends of the silicon controlled rectifiers in the rectifier module 100 and the bus P, and generates a driving signal according to the voltages between the second ends of the silicon controlled rectifiers and the bus P, that is, generates the driving signal by detecting the voltages between the first phase R, the second phase S, the third phase T and the bus P.

Further, referring to fig. 3, the ground terminals GND of the control module 200 and the driving module 300 are connected to the bus bar P.

It should be noted that the control module 200 may include a processing unit 201 and a conditioning unit 202, referring to fig. 3, the conditioning unit 202 is connected to the driving module 300, and ground ends GND of the processing unit 201, the conditioning unit 202, the control module 200, and the driving module 300 are all connected to a bus P, where the ground ends GND of the control module 200 and the driving module 300 are connected to the bus P, the ground end GND is a signal ground, and the bus P is a positive voltage of the bus.

Further, with reference to fig. 2, the first end of each of the silicon controlled rectifiers is a control end, the second end of each of the silicon controlled rectifiers is an anode, and the third end of each of the silicon controlled rectifiers is a cathode.

It should be noted that the rectifier module 100 includes at least one silicon controlled rectifier, and this embodiment is described with three silicon controlled rectifiers, the rectifier module 100 includes three silicon controlled rectifiers, that is, a first silicon controlled rectifier SCR1, a second silicon controlled rectifier SCR2 and a third silicon controlled rectifier SCR3, each of the first ends of the silicon controlled rectifiers is connected to the driver module 300, each of the second ends of the silicon controlled rectifiers is connected to the power grid input end, each of the third ends of the silicon controlled rectifiers is connected to the bus P, and the ground terminals of the controller module 200 and the driver module 300 are connected to the bus.

Further, with continued reference to fig. 2, the control module 200 includes a processing unit 201 and a conditioning unit 202; wherein the content of the first and second substances,

the conditioning unit 202 is configured to condition the power grid voltage input by the power grid input end, and send a conditioned voltage signal to the processing unit 201;

when the power supply is started slowly, the processing unit 201 is configured to generate a driving signal including a phase shift signal according to the received conditioned voltage signal, and send the driving signal to the driving module 300.

It should be noted that the control module 200 may include a processing unit 201 and a conditioning unit 202, and the MCU in the processing unit 201 may also control the silicon controlled rectifier to switch slowly in a phase shift angle manner, so that a power-on buffer circuit may be omitted, the control is flexible, a power-on buffer resistor and the like are not needed during power-on, and the space is not occupied, thereby reducing the cost.

Further, with continued reference to fig. 2, the rectifier module 100 includes a silicon controlled rectifier bridge circuit 101, where the silicon controlled rectifier bridge circuit 101 is connected to the input end of the power grid; wherein the content of the first and second substances,

the silicon controlled rectifier bridge circuit 101 is configured to receive a three-phase alternating current input by the power grid input end, and rectify the three-phase alternating current to output a direct current;

the silicon controlled rectifier bridge circuit 101 is further configured to receive a driving signal of the driving module 300, and control the direct current output according to the driving signal.

It should be noted that the control module 200 may include a processing unit 201 and a conditioning unit 202, referring to fig. 3, the conditioning unit 202 is connected to the driving module 300, and ground ends GND of the processing unit 201, the conditioning unit 202, the control module 200, and the driving module 300 are all connected to a bus P, where the ground ends GND of the control module 200 and the driving module 300 are connected to the bus P, the ground end GND is a signal ground, and the bus P is a positive voltage of the bus.

In this embodiment, the silicon controlled rectifier circuit may be a semi-controlled silicon controlled rectifier circuit, wherein the power supply may be a three-phase ac power supply, the silicon controlled rectifier bridge circuit 101 is connected to the three-phase ac power supply, the silicon controlled rectifier bridge circuit 101 may include a plurality of thyristors, and the silicon controlled rectifier bridge circuit 101 is controlled to emit waves by detecting a power grid input voltage input by the three-phase ac power supply through the MCU processor. I.e. the mains input voltage will be connected to the three-phase connector and rectified by the scr bridge circuit 101 to provide a dc voltage U to the scr intermediate dc voltage circuit_dc+、U_dcThe scr circuit 101 receives three-phase ac power and rectifies the three-phase ac power into dc power for output.

It is easy to understand that the driving module 300 is connected to the control terminal of the rectifying module 100, and the scr circuit 101 receives the driving signal of the driving module 300 and controls the dc output according to the driving signal.

Further, referring to fig. 2, the rectifier module 100 further includes a dc bus circuit 102, wherein an input end of the dc bus circuit 102 is connected to an output end of the scr circuit 101; wherein the content of the first and second substances,

the dc bus circuit 102 is configured to receive the dc power output by the scr circuit 101, and convert the dc power into a dc voltage value;

the dc bus circuit 102 is further configured to store the dc voltage value.

It should be noted that the rectifier module 100 may further include a dc bus circuit 102, an input end of the dc bus circuit 102 is connected to an output end of the scr bridge circuit 101, the dc bus circuit 102 may include a charging capacitor C, and the dc bus circuit 102 receives the dc power output by the scr bridge circuit 101, converts the dc power into a dc voltage value, and stores the dc voltage value through the charging capacitor C.

It is easy to understand that the dc bus circuit 102 may include one or more charging capacitors C, and the charging capacitors C may be connected in parallel with the scr bridge circuit 101, or connected in series with the scr bridge circuit 101, which is not limited in this embodiment.

Further, referring to fig. 2, the scr circuit 101 includes a first rectifier bridge 1011, a second rectifier bridge 1012, and a third rectifier bridge 1013; wherein the content of the first and second substances,

the first rectifier bridge 1011 is connected to a first phase of the three-phase ac power source, the first rectifier bridge 1011 is connected to the second rectifier bridge 1012, the second rectifier bridge 1012 is connected to a second phase of the three-phase ac power source, the second rectifier bridge 1012 is connected to the third rectifier bridge 1013, the third rectifier bridge 1013 is connected to a third phase of the three-phase ac power source, and the third rectifier bridge 1013 is connected to the drive module 300.

It should be noted that, when the MCU processor is used to perform software wave-sending, the silicon controlled rectifier bridge circuit is controlled to send wave in a manner that the MCU processor detects the input voltage of the three-phase ac power input, and at least 4 series of resistor strings are required to connect the three-phase ac power input to the grid, which occupies a large area and is costly, in this embodiment, the voltage across the scr circuit 101 is detected instead of the voltage of the power line, so as to reduce the number of resistor strings connected to the power line, reduce the occupied area of the board, and reduce the cost, in this embodiment, only 3 resistor strings are required to be connected to the power line, i.e. the scr circuit 101 may include a first rectifier bridge 1011, a second rectifier bridge 1012, and a third rectifier bridge 1013, the first rectifier bridge 1011 is connected to the first phase R of the three-phase ac power supply, the second rectifier bridge 1012 is connected to the second phase S of the three-phase ac power supply, and the third rectifier bridge 1013 is connected to the third phase T of the three-phase ac power supply.

Further, with continued reference to fig. 2, the first rectifier bridge 1011 includes a first silicon controlled SCR1 and a first diode D1; wherein the content of the first and second substances,

an anode of the first SCR1 is connected to a cathode of the first diode D1, an anode of the first SCR1 is connected to a first phase of the three-phase ac power source, a cathode of the first SCR1 is connected to the second rectifier bridge 1012, and an anode of the first diode D1 is connected to the second rectifier bridge 1012.

It should be noted that the thyristor is a thyristor, and the characteristics of the thyristor are as follows: the thyristor voltage, when forward biased, may be turned on to a conductive state by providing a gate current to the gate. However, conventional thyristors cannot be cut off from the gate, but remain conductive as long as there is current through the thyristor. When thyristors are used in rectifiers of frequency converters, the thyristors need to be driven to produce the desired intermediate circuit dc voltage.

Specifically, the first rectifier bridge 1011 may include a first silicon controlled SCR1 and a first diode D1, the first silicon controlled SCR1 and the first diode D1 forming a series connected pair in which a cathode of the first diode D1 is connected to an anode of the first silicon controlled SCR1, and the rectified voltage Udc is formed between the cathode of the first silicon controlled SCR1 and the anode of the first diode D1.

Further, with continued reference to fig. 2, the second rectifier bridge 1012 includes a second silicon controlled SCR2 and a second diode D2; wherein the content of the first and second substances,

an anode of the second SCR2 is connected to a cathode of the second diode D2, an anode of the second SCR2 is connected to a second phase of the three-phase ac power supply, a cathode of the second SCR2 is connected to the third rectifier bridge 1013, and an anode of the second diode D2 is connected to the third rectifier bridge 1013.

It should be noted that the second rectifier bridge 1012 includes a second SCR2 and a second diode D2, and the second SCR2 and the second diode D2 form a series connection pair, in which the cathode of the second diode D2 is connected to the anode of the second SCR2, and the rectified voltage U is rectified_dcFormed between the cathode of the second silicon controlled SCR2 and the anode of the second diode D2.

Further, with continued reference to fig. 2, the third rectifier bridge 1013 includes a third silicon controlled SCR3 and a third diode D3; wherein the content of the first and second substances,

an anode of the third SCR3 is connected to a cathode of the third diode D3, an anode of the third SCR3 is connected to a third phase of the three-phase ac power source, a cathode of the third SCR3 is connected to the dc bus circuit 102, and an anode of the third diode D3 is connected to the dc bus circuit 102.

It should be noted that the third rectifier bridge 1013 includes a third SCR3 and a third diode D3, and the third SCR3 and the third diode D3 form a series connection pair, in which the cathode of the third diode D3 is connected to the anode of the third SCR3, and the rectified voltage U is rectified_dcFormed between the cathode of the third silicon controlled SCR3 and the anode of the third diode D3.

It is easily understood that, with continued reference to fig. 2, the control electrode of the third SCR3 is connected to the driving module 300, and the SCR circuit 101 receives the driving signal of the driving module 300 and controls the dc power output according to the driving signal.

It should be noted that the control module 200 transmits the driving signal to the driving module 300, the control electrode of the third SCR3 is connected to the driving module 300, and the control module 200 can also control the thyristors in the SCR bridge circuit 101 to switch in a phase shift angle manner, so that the power-on buffer circuit can be omitted, and the cost can be reduced.

Further, with continued reference to fig. 2, the dc bus circuit 102 includes a charging capacitor C; wherein the content of the first and second substances,

the first end of the charging capacitor C is connected with the cathode of the third SCR3, and the second end of the charging capacitor C is connected with the anode of the third diode D3.

It should be noted that the rectifier module 100 may further include a dc bus circuit 102, an input end of the dc bus circuit 102 is connected to an output end of the scr bridge circuit 101, the dc bus circuit 102 may include a charging capacitor C, and the dc bus circuit 102 receives the dc power output by the scr bridge circuit 101, converts the dc power into a dc voltage value, and stores the dc voltage value through the charging capacitor C.

Further, the driving module 300 is any one of a push-pull triode circuit, a push-pull MOS transistor circuit, and a constant current source circuit.

It should be noted that the push-pull circuit is an output circuit connected between two transistors with different polarities, the push-pull circuit may employ two power transistors or MOS transistors with the same parameters, and exist in the circuit in a push-pull manner, and each of the two power transistors is responsible for waveform amplification tasks of positive and negative half cycles. The output of the push-pull circuit can not only pour current into the load, but also draw current from the load, and the push-pull circuit can comprise a push-pull triode circuit, a push-pull MOS (metal oxide semiconductor) tube circuit and the like.

Specifically, the control module 200 transmits the driving signal to the driving module 300, and the driving module 300 controls the output voltage of the rectifying module 100 according to the driving signal, wherein the driving module 300 may be any one of a push-pull triode circuit, a push-pull MOS transistor circuit, and a constant current source circuit, and the driving module 300 may also be other types of driving circuits, which is not limited in this embodiment.

An embodiment of the present invention provides a silicon controlled rectifier method based on the silicon controlled rectifier circuit, and referring to fig. 4, fig. 4 is a schematic flow diagram of a first embodiment of the silicon controlled rectifier method based on the silicon controlled rectifier circuit according to the present invention.

In this embodiment, the silicon controlled rectifier method includes the following steps:

step S10: the control module collects voltage between the second end and the third end of each silicon controlled rectifier tube in the rectifier module and generates a driving signal according to the voltage between the second end and the third end of each silicon controlled rectifier tube.

It should be noted that the control module may be an MCU processor or other type of processor, which is not limited in this embodiment, for example, the rectifier module may include a silicon controlled rectifier bridge circuit, the silicon controlled rectifier tube is controlled to emit a wave by detecting voltages at two ends of each silicon controlled rectifier tube in the silicon controlled rectifier bridge circuit through the MCU processor, and the control module collects voltages at two ends of the silicon controlled rectifier tube in the silicon controlled rectifier bridge circuit and generates the driving signal according to the voltages at two ends of the silicon controlled rectifier tube.

It will be readily understood that the control module may comprise a processing unit and a conditioning unit, the conditioning being to amplify, buffer or scale an analog signal or the like to be suitable for an input of an analog-to-digital converter, the analog-to-digital converter digitizing the analog signal and sending the digital signal to the MCU processor or other processor in the processing unit, or the conditioning unit may directly send the analog signal to the MCU processor or other processor in the processing unit for data processing by the MCU processor or other processor. In this embodiment, the conditioning unit may perform signal processing on the collected voltage between the second end and the third end of each scr. For example, filtering the voltage between the second terminal and the third terminal of each scr, increasing the voltage between the second terminal and the third terminal of each scr, etc., the specific structure of the conditioning circuit and the signal processing method of the conditioning unit 202 are not limited in this embodiment.

Step S20: the driving module receives the driving signal and controls a silicon-controlled rectifier tube of the rectifier module according to the driving signal.

It is easy to understand that the driving module is connected with the control end of the rectifying module, receives the driving signal, and controls the output voltage of the rectifying module through the control end of the rectifying module according to the driving signal. The rectifier module can include the silicon controlled rectifier, and drive signal can direct control silicon controlled rectifier, and then control output voltage. In this embodiment, the control module transmits the driving signal to the driving module, and the driving module controls the output voltage of the rectifying module according to the driving signal, where the driving module may be any one of a push-pull triode circuit, a push-pull MOS transistor circuit, and a constant current source circuit, and the driving module may also be another type of driving circuit, which is not limited in this embodiment.

It should be noted that the control module transmits the driving signal to the driving module, the rectifier module may include a silicon controlled rectifier bridge circuit, the silicon controlled rectifier bridge circuit may include a plurality of thyristors, and the control module may also control the thyristors in the silicon controlled rectifier bridge circuit to switch in a phase shift angle manner, so that the power-on buffer circuit may be omitted, and the cost is reduced.

It is easy to understand that the rectifier module may further include a dc bus circuit, an input terminal of the dc bus circuit is connected to an output terminal of the scr circuit, the dc bus circuit may include a charging capacitor, and the dc bus circuit receives the dc power output by the scr circuit, converts the dc power into a dc voltage value, and stores the dc voltage value through the charging capacitor.

In this embodiment, a control module is used to collect the voltage between the second end and the third end of each scr in the rectifier module, and a driving signal is generated according to the voltage between the second end and the third end of each scr; the driving module receives the driving signal and controls a silicon-controlled rectifier tube of the rectifier module according to the driving signal. Compared with the existing control unit MCU which detects the voltage of a power grid, judges, emits waves and directly drives the rectification module after passing through the power amplification circuit, in the embodiment, the control module detects the voltage at two ends of a silicon controlled rectifier tube in the rectification module instead of the voltage of a power grid line and drives the silicon controlled rectifier tube according to the detected voltage at two ends of the silicon controlled rectifier tube in the rectification module, the embodiment is flexible in control, and does not need to use an electrifying buffer resistor and the like during electrifying, so that the space is not occupied, and the cost is reduced; meanwhile, the voltage at two ends of a silicon controlled rectifier tube in the rectifier module is detected instead of the voltage of a power grid line, so that the number of resistor strings connected with the power grid is reduced, the occupied area of a board is reduced, and the cost is reduced, thereby solving the technical problems of inflexibility, large occupied space and high cost of the existing silicon controlled rectifier drive.

It should be understood that the above is only an example, and the technical solution of the present invention is not limited in any way, and in a specific application, a person skilled in the art may set the technical solution as needed, and the present invention is not limited thereto.

It should be noted that the above-described work flows are only exemplary, and do not limit the scope of the present invention, and in practical applications, a person skilled in the art may select some or all of them to achieve the purpose of the solution of the embodiment according to actual needs, and the present invention is not limited herein.

In addition, the technical details that are not described in detail in this embodiment may refer to the silicon controlled rectifier circuit provided in any embodiment of the present invention, and are not described herein again.

Further, it should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or circuit that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or circuit. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in the process, method, article, or circuit that comprises the element.

The above-mentioned serial numbers of the embodiments of the present invention are merely for description and do not represent the merits of the embodiments.

Through the above description of the embodiments, those skilled in the art will clearly understand that the method of the above embodiments can be implemented by software plus a necessary general hardware platform, and certainly can also be implemented by hardware, but in many cases, the former is a better implementation manner. Based on such understanding, the technical solution of the present invention or portions thereof that contribute to the prior art may be embodied in the form of a software product, where the computer software product is stored in a storage medium (e.g. Read Only Memory (ROM)/RAM, magnetic disk, optical disk), and includes several instructions for enabling a terminal device (e.g. a mobile phone, a computer, a server, or a network device) to execute the method according to the embodiments of the present invention.

The above description is only a preferred embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications of equivalent structures and equivalent processes, which are made by using the contents of the present specification and the accompanying drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.