阅读说明：本技术 膜层的构图方法、微流控器件及其制作方法 (Film composition method, microfluidic device and manufacturing method thereof ) 是由 耿越 肖月磊 廖辉 蔡佩芝 李建 吴申康 于 2019-01-03 设计创作，主要内容包括：一种膜层的构图方法,包括：提供具有第一表面(11)的膜层(1)；在膜层(1)的第一表面(11)上形成n个刻蚀阻挡层(21,22),n为大于等于2的整数；以及利用n个刻蚀阻挡层(21,22)作为掩模对膜层(1)进行n次刻蚀而在第一表面(11)上形成凹陷结构,凹陷结构包括n种深度(h1,h2)不同的底面(1001,102),所述深度(h1,h2)是在垂直于膜层(1)的方向上从不同底面(1001,102)到第一表面(11)的距离,n次刻蚀中的相邻两次刻蚀包括在前刻蚀和在后刻蚀,在完成在前刻蚀之后,去除n个刻蚀阻挡层(21,22)的一部分以形成在后刻蚀的掩模,其中n个刻蚀阻挡层(21,22)的被去除的部分的材料与在后刻蚀的掩模的材料至少部分不同。该膜层构图方法在满足精度要求的同时,制作工艺简单,生产效率较高。(A method of patterning a film layer, comprising: providing a film layer (1) having a first surface (11); forming n etch stop layers (21, 22) on the first surface (11) of the film layer (1), wherein n is an integer greater than or equal to 2; and etching the film layer (1) n times using the n etch stop layers (21, 22) as a mask to form a recess structure on the first surface (11), the recess structure comprising n bottom surfaces (1001, 102) of different depths (h1, h2), the depths (h1, h2) being distances from the different bottom surfaces (1001, 102) to the first surface (11) in a direction perpendicular to the film layer (1), two adjacent etches of the n etches comprising a preceding etch and a following etch, after completion of the preceding etch, removing a portion of the n etch stop layers (21, 22) to form a mask for the following etch, wherein the material of the removed portion of the n etch stop layers (21, 22) is at least partially different from the material of the mask for the following etch. The film layer composition method meets the precision requirement, and meanwhile, the manufacturing process is simple, and the production efficiency is high.)

A method of patterning a film layer, comprising:

providing a film layer comprising a first surface;

forming n etching barrier layers on the first surface of the film layer, wherein n is an integer greater than or equal to 2; and

etching the film layer n times using the n etch stop layers as a mask to form a recess structure on the first surface, the recess structure including n bottom surfaces having different depths, the depth being a distance from the bottom surface to the first surface in a direction perpendicular to the film layer, wherein,

the two adjacent times of the n times of etching comprise a front etching and a back etching, and after the front etching is finished, part of the n etching barrier layers is removed to form a mask of the back etching;

the material of the portions of the n etch-barrier layers removed after the preceding etch is completed is at least partially different from the material of the mask of the subsequent etch.

The method of patterning a film layer as defined in claim 1,

the n etching barrier layers comprise two adjacent etching barrier layers which are stacked and comprise an etching barrier layer close to the film layer and an etching barrier layer far away from the film layer,

the orthographic projection of one part of the etching barrier layer far away from the film layer on the film layer is overlapped with the orthographic projection of the etching barrier layer close to the film layer on the film layer, and the orthographic projection of the other part of the etching barrier layer far away from the film layer on the film layer is not overlapped with the orthographic projection of the etching barrier layer close to the film layer on the film layer;

the portion of the n etch stop layers removed after the preceding etch is completed is the etch stop layer away from the film layer.

The film layer patterning method of claim 2, wherein the etch stop layer remote from the film layer covers an upper surface of the etch stop layer proximate to the film layer remote from the film layer and side surfaces of the etch stop layer proximate to the film layer, the side surfaces intersecting the upper surface.

The method of claim 1, wherein the n etch stop layers comprise two adjacent etch stop layers, the two adjacent etch stop layers being stacked and comprising an etch stop layer adjacent to the film and an etch stop layer distal from the film,

the orthographic projection of one part of the etching barrier layer close to the film layer on the film layer is overlapped with the orthographic projection of the etching barrier layer far away from the film layer on the film layer, and the orthographic projection of the other part of the etching barrier layer close to the film layer on the film layer is not overlapped with the orthographic projection of the etching barrier layer far away from the film layer on the film layer;

the portion of the n etch stop layers removed after the preceding etch is completed is the other portion of the etch stop layer adjacent the film layer.

The method of patterning a film layer as defined in claim 1,

the orthographic projections of the n etching barrier layers on the film layer are not overlapped;

the n etching barrier layers comprise a front etching barrier layer and a rear etching barrier layer;

the preceding etch stop layer is the portion of the n etch stop layers removed after the preceding etch is completed; the subsequent etching barrier layer is a part of the n etching barrier layers which are removed after the subsequent etching is finished, and the material of the previous etching barrier layer is different from that of the subsequent etching barrier layer.

The method for patterning a film layer as claimed in any one of claims 2 to 4, wherein the materials of the adjacent two of the n etch stop layers are different from each other.

The method of patterning a film layer as claimed in any one of claims 1 to 6 wherein the n etch stop layers are all of different materials.

The method of patterning a film as claimed in any one of claims 1 to 7, wherein during the post-etching, etching is continued for the bottom surface formed before the post-etching.

The method of patterning a film layer of claim 8 wherein a cross-sectional shape of the recessed features along a first direction perpendicular to the film layer comprises a step shape.

The method of patterning a film according to any one of claims 1 to 9, wherein in the n times of etching, the film is etched by wet etching.

The method of patterning a film layer as claimed in any one of claims 1 to 10 wherein the material of each of the n etch stop layers comprises a metal or a metal oxide.

The method of patterning a film as claimed in any one of claims 1 to 11 wherein after the preceding etching is completed, the portions of the n etch stop layers are removed using a wet etch.

The method of patterning a film layer as claimed in any one of claims 1 to 12 wherein forming n etch stop layers comprises:

forming a first etching barrier material layer covering the film layer on the film layer, and carrying out a first composition process on the first etching barrier material layer to form a first etching barrier layer; and forming an nth etching barrier material layer covering the nth-1 etching barrier layer on one side of the nth-1 etching barrier layer far away from the film layer, and carrying out an nth composition process on the nth etching barrier material layer to form the nth etching barrier layer.

The method of patterning a film layer as claimed in any one of claims 1 to 13 wherein forming each of the n etch stop layers comprises:

forming an etching barrier material layer;

forming a photoresist layer on the etching barrier material layer;

carrying out a photoetching process on the etching barrier material layer by utilizing the photoresist layer to form the etching barrier layer; and

and removing the photoresist layer.

The method of patterning a film layer as set forth in any one of claims 1-14, wherein the method further comprises: and before the film layer is etched for n times, forming an etching prevention film covering a second surface of the film layer, wherein the second surface is opposite to the first surface.

The method of patterning a film layer of any one of claims 1-15, wherein the film layer is a glass substrate.

A method of fabricating a microfluidic device comprising forming a layer by a method of patterning a layer as claimed in any one of claims 1 to 16.

The method of fabricating a microfluidic device according to claim 17, further comprising:

providing a first film layer, wherein the first film layer comprises a first surface;

forming a recessed feature on a first surface of the first film layer using the method of patterning the film layer of any of claims 1-16, the recessed feature comprising a first bottom surface having a first depth and a second bottom surface having a second depth, the second depth being less than the first depth;

providing a second film layer comprising protrusions; and

and oppositely combining the first film layer and the second film layer to ensure that the protrusions are attached to the first bottom surface of the first film layer, so that a cavity is formed between the second bottom surface of the first film layer and the second film layer.

A microfluidic device comprising:

a first film layer comprising a first surface with a recessed feature disposed thereon, the recessed feature comprising a first bottom surface having a first depth and a second bottom surface having a second depth, the second depth being less than the first depth;

a second film layer comprising protrusions;

wherein the protrusions are disposed opposite the first bottom surface of the first film layer, thereby forming a cavity between the second bottom surface of the first film layer and the second film layer.