阅读说明：本技术 膜层的构图方法、微流控器件及其制作方法 (Film composition method, microfluidic device and manufacturing method thereof ) 是由 耿越 肖月磊 廖辉 蔡佩芝 李建 吴申康 于 2019-01-03 设计创作，主要内容包括：一种膜层的构图方法,包括：提供具有第一表面(11)的膜层(1)；在膜层(1)的第一表面(11)上形成n个刻蚀阻挡层(21,22),n为大于等于2的整数；以及利用n个刻蚀阻挡层(21,22)作为掩模对膜层(1)进行n次刻蚀而在第一表面(11)上形成凹陷结构,凹陷结构包括n种深度(h1,h2)不同的底面(1001,102),所述深度(h1,h2)是在垂直于膜层(1)的方向上从不同底面(1001,102)到第一表面(11)的距离,n次刻蚀中的相邻两次刻蚀包括在前刻蚀和在后刻蚀,在完成在前刻蚀之后,去除n个刻蚀阻挡层(21,22)的一部分以形成在后刻蚀的掩模,其中n个刻蚀阻挡层(21,22)的被去除的部分的材料与在后刻蚀的掩模的材料至少部分不同。该膜层构图方法在满足精度要求的同时,制作工艺简单,生产效率较高。(A method of patterning a film layer, comprising: providing a film layer (1) having a first surface (11); forming n etch stop layers (21, 22) on the first surface (11) of the film layer (1), wherein n is an integer greater than or equal to 2; and etching the film layer (1) n times using the n etch stop layers (21, 22) as a mask to form a recess structure on the first surface (11), the recess structure comprising n bottom surfaces (1001, 102) of different depths (h1, h2), the depths (h1, h2) being distances from the different bottom surfaces (1001, 102) to the first surface (11) in a direction perpendicular to the film layer (1), two adjacent etches of the n etches comprising a preceding etch and a following etch, after completion of the preceding etch, removing a portion of the n etch stop layers (21, 22) to form a mask for the following etch, wherein the material of the removed portion of the n etch stop layers (21, 22) is at least partially different from the material of the mask for the following etch. The film layer composition method meets the precision requirement, and meanwhile, the manufacturing process is simple, and the production efficiency is high.)