阅读说明：本技术 红外通光孔结构及终端 (Infrared light-transmitting hole structure and terminal ) 是由 唐彬 于 2019-04-10 设计创作，主要内容包括：本申请涉及一种红外通光孔结构。利用依次层叠的基材、IR油墨层和增透膜系,来提高红外通光孔的红外光透过率,同时降低可见光的透过率。其中IR油墨层的粘度范围在10000～50000Pa.s,易于加工。增透膜系包括层叠的氧化硅层和氧化金属层,且其总厚度比控制在(5.2～6.5)：1之间,利用氧化硅层和氧化金属层之间的光程差,通过层叠的方式组合来实现增透膜系提高红外光透过率的同时有效阻止可见光的透过率效果。本申请红外通光孔结构相对简单,易于加工,且实施效果较佳,具备较高的工艺性和经济性。本申请还涉及一种终端产品,采用上述红外通光孔结构,可以提高红外光的透过率,同时增强红外传感器在终端显示面上的隐蔽效果。(The application relates to an infrared light through hole structure. The base material, the IR ink layer and the antireflection film system which are sequentially laminated are utilized to improve the infrared light transmittance of the infrared light transmission hole and simultaneously reduce the visible light transmittance. Wherein the viscosity range of the IR printing ink layer is 10000-50000 Pa.s, and the processing is easy. The antireflection film comprises a silicon oxide layer and a metal oxide layer which are laminated, and the total thickness ratio of the antireflection film is controlled to be (5.2-6.5): 1, the optical path difference between the silicon oxide layer and the metal oxide layer is utilized, and the antireflection film system is combined in a laminating mode to achieve the effect of improving the infrared light transmittance and effectively preventing the visible light transmittance. The infrared light through hole structure is relatively simple, easy to process, good in implementation effect and high in manufacturability and economical efficiency. The application still relates to a terminal product, adopts above-mentioned infrared light hole structure that leads to, can improve the transmissivity of infrared light, strengthens infrared sensor hidden effect on the terminal display surface simultaneously.)

1. An infrared light transmission hole structure is characterized by comprising a base material, an IR printing ink layer and an antireflection film system which are sequentially stacked, wherein the base material is made of a transparent material, the viscosity of the IR printing ink layer ranges from 10000 Pa.s to 50000Pa.s, the antireflection film system comprises a silicon oxide layer and a metal oxide layer which are stacked, and the thickness ratio of the silicon oxide layer to the metal oxide layer is (5.2-6.5): 1.

2. The infrared clear aperture structure of claim 1, wherein the metal oxide layer comprises titanium oxide or zirconium oxide.

3. The infrared light transmission hole structure of claim 2, wherein the antireflection film system comprises a first silicon oxide layer and a first titanium oxide layer which are stacked, the first silicon oxide layer has a thickness of 225.88nm, and the first titanium oxide layer has a thickness of 34.95 nm.

4. The infrared light transmission hole structure of claim 2, wherein the antireflection film system comprises a third silicon dioxide layer, a second titanium dioxide layer, a third silicon oxide layer, a third titanium oxide layer and a fourth silicon oxide layer, which are sequentially stacked, the thickness of the second silicon dioxide layer is 146.8nm, the thickness of the second titanium dioxide layer is 23.16nm, the thickness of the third silicon oxide layer is 112.8nm, the thickness of the third titanium oxide layer is 61.43nm, and the thickness of the fourth silicon oxide layer is 202.56 nm.

5. The infrared light transmission hole structure as claimed in claim 2, wherein the antireflection film system comprises a fifth silicon oxide layer, a first zirconium oxide layer, a sixth silicon oxide layer, a second zirconium oxide layer and a seventh silicon oxide layer, which are sequentially stacked, the thickness of the fifth silicon oxide layer is 145nm, the thickness of the first zirconium oxide layer is 24nm, the thickness of the sixth silicon oxide layer is 110nm, the thickness of the second zirconium oxide layer is 63nm, and the thickness of the seventh silicon oxide layer is 205 nm.

6. The infrared light transmission hole structure as claimed in any one of claims 1 to 5, wherein the IR ink layer is made of a precision IR 1400N type or an empire IPX type IR ink.

7. The infrared light passing hole structure of claim 6, wherein the printing thickness of the IR ink layer is between 3-8 um.

8. The infrared light transmitting hole structure of claim 7, wherein when the mesh number of the screen printing plate of the IR printing ink layer is 500 meshes, the printing thickness is between 3 and 4 um;

when the screen mesh number of the IR printing ink layer is 420 meshes, the printing thickness is between 4 and 6 um;

when the mesh number of the screen printing plate of the IR printing ink layer is 350 meshes, the printing thickness of the screen printing ink layer is 6-8 um.

9. The infrared light passing aperture structure of claim 1, wherein the substrate is made of glass, PC, PET or PMMA material.

10. A terminal, characterized in that the terminal comprises an infrared sensor, and the light through hole of the infrared sensor adopts the infrared light through hole structure as claimed in any one of claims 1 to 9.

Technical Field

The application relates to the field of terminals, in particular to an infrared light through hole structure and a terminal product adopting the infrared light through hole structure.

Background

Currently, terminal products represented by smart phones have higher and higher requirements for screen occupation. This makes the equipment stack that is located the end product display surface need compacter, also guarantees better disguise simultaneously for the outward appearance is unified harmonious more.

In 2018, 9 and 13, the apple provides iPhone X based on a 3D structured light technology, 3D Face recognition is achieved, Face ID is used for completely replacing Touch ID fingerprint recognition, and the screen occupation ratio of a terminal display surface is greatly improved. Each terminal manufacturer also follows up and provides a terminal model supporting 3D face recognition, wherein the 3D face recognition technology mainly comprises two types of 3D structure light and TOF.

Both of the two 3D face recognition technologies need to emit infrared light to recognize the face of a user, and the operating wavelength of the infrared light is set at 940nm, which is safe for human eyes. The infrared sensor that follows needs to be disposed below the glass cover of the display surface, and thus places high demands on the infrared transmittance and concealment of the light transmission hole. At present, a light through hole of a commonly used infrared sensor is printed and shielded by adopting IR printing ink, so that visible light is shielded while infrared light passes through the light through hole, and the effect of attractiveness is achieved. However, the infrared transmittance of the IR printing ink in a 940nm wave band is usually between 70% and 90%, and the working effect of the infrared sensor is influenced to a certain extent. The Iphone X mobile phone is used for carrying out pure coating treatment on the light through hole, and the visible light transmittance is below 5 percent, and the 940nm infrared light transmittance is above 92 percent. However, the number of the coating layers is more than twenty, so that the equipment process is complex, the precision needs to be strictly controlled, and the cost is high.

Disclosure of Invention

The application provides an infrared clear light hole structure that can improve infrared light transmissivity, and the cost is lower, specifically includes following technical scheme:

an infrared light transmission hole structure comprises a base material, an IR printing ink layer and an antireflection film system which are sequentially stacked, wherein the base material is made of a transparent material, the viscosity of the IR printing ink layer ranges from 10000 Pa.s to 50000Pa.s, the antireflection film system comprises a silicon oxide layer and a metal oxide layer which are stacked, and the thickness ratio of the silicon oxide layer to the metal oxide layer is (5.2-6.5): 1.

According to the infrared light-transmitting hole structure, the IR printing ink layer and the antireflection film system are sequentially stacked on the base material, wherein the viscosity range of the IR printing ink layer is 10000-50000 Pa.s, and the processability of the IR printing ink is guaranteed. The antireflection film comprises a silicon oxide layer and a metal oxide layer which are laminated, and the total thickness ratio of the antireflection film is controlled to be (5.2-6.5): 1, the optical path difference between the silicon oxide layer and the metal oxide layer is utilized, and the antireflection film system is combined in a laminating mode, so that the transmittance of visible light can be effectively prevented while the transmittance of infrared light can be improved, the transmittance of infrared light of the infrared light through hole structure is improved, and the concealment of the infrared sensor is also enhanced. The infrared light through hole structure is relatively simple, easy to process, good in implementation effect and high in manufacturability and economical efficiency.

Wherein the metal oxide layer comprises titanium oxide or zirconium oxide.

The titanium oxide and the zirconium oxide are common film materials, and have higher economical efficiency and processing technology basis.

The antireflection film system comprises a first silicon oxide layer and a first titanium oxide layer which are laminated, wherein the thickness of the first silicon oxide layer is 225.88nm, and the thickness of the first titanium oxide layer is 34.95 nm.

The average transmittance of the infrared light transmission hole structure adopting the antireflection film system for light with 400-600 nm wave bands is 6.62%, and the transmittance of light with 940nm wave bands can reach 92.85%.

The antireflection film system comprises a second silicon dioxide layer, a second titanium dioxide layer, a third silicon oxide layer, a third titanium oxide layer and a fourth silicon oxide layer which are sequentially stacked, wherein the thickness of the second silicon dioxide layer is 146.8nm, the thickness of the second titanium dioxide layer is 23.16nm, the thickness of the third silicon oxide layer is 112.8nm, the thickness of the third titanium oxide layer is 61.43nm, and the thickness of the fourth silicon oxide layer is 202.56 nm.

The average transmittance of the infrared light transmission hole structure adopting the antireflection film system for light with 400-600 nm wave bands is 4.01 percent, and the transmittance of light with 940nm wave bands can reach 94.68 percent.

The antireflection film system comprises a fifth silicon oxide layer, a first zirconium oxide layer, a sixth silicon oxide layer, a second zirconium oxide layer and a seventh silicon oxide layer which are sequentially stacked, wherein the thickness of the fifth silicon oxide layer is 145nm, the thickness of the first zirconium oxide layer is 24nm, the thickness of the sixth silicon oxide layer is 110nm, the thickness of the second zirconium oxide layer is 63nm, and the thickness of the seventh silicon oxide layer is 205 nm.

The average transmittance of the infrared light transmission hole structure adopting the antireflection film system for light with 400-600 nm wave bands is 5.28%, and the transmittance of light with 940nm wave bands can reach 93.05%.

Wherein, the IR ink layer is made of a fine IR 1400N type or an empire IPX type IR ink.

The precision IR 1400N type and the empire IPX type IR printing ink are also common IR printing ink materials and have higher economical efficiency and processing technology foundation.

Wherein, the printing thickness of IR printing ink layer is between 3 ~ 8 um.

The printing thickness of the IR printing ink can be controlled to ensure the infrared transmittance of the IR printing ink and effectively block most visible light from transmitting.

When the mesh number of the screen printing plate of the IR printing ink layer is 500 meshes, the printing thickness of the IR printing ink layer is between 3 and 4 um;

when the screen mesh number of the IR printing ink layer is 420 meshes, the printing thickness is between 4 and 6 um;

when the mesh number of the screen printing plate of the IR printing ink layer is 350 meshes, the printing thickness of the screen printing ink layer is 6-8 um.

When the IR printing ink is manufactured, the printing thickness is controlled by combining the mesh number of the screen printing plate, so that the infrared light transmittance of the IR printing ink layer can be further ensured, and the visible light transmittance is reduced.

Wherein, the substrate is made of glass, PC, PET or PMMA material.

The base material made of the materials can provide reliable protection for the IR ink layer and the antireflection film system.

The application also relates to a terminal, the terminal comprises an infrared sensor, and the light through hole of the infrared sensor adopts the infrared light through hole structure.

By adopting the infrared light through hole structure, the infrared light utilization rate of the infrared sensor when sending and receiving infrared light signals can be improved, and the working reliability of the infrared sensor is ensured. Simultaneously, because this application infrared clear hole structure is to the effective shielding of visible light, can carry out effectual hiding to infrared sensor on the display surface at terminal, improve the outward appearance uniformity of terminal product.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings used in the description of the embodiments of the present application will be briefly described below.

Fig. 1 is a schematic diagram of an infrared light transmitting hole structure provided in an embodiment of the present application;

FIG. 2 is a schematic view of an antireflection film stack 30 in the IR pass aperture structure of FIG. 1;

FIG. 3 is a schematic view of another embodiment of an antireflection film stack 30 in the IR pass aperture structure of FIG. 1;

FIG. 4 is a schematic view of another embodiment of an antireflection film stack 30 in the IR pass aperture structure of FIG. 1;

FIG. 5 is a schematic diagram showing the transmittance of an embodiment of the antireflection film system 30 shown in FIG. 2;

FIG. 6 is a schematic diagram showing the transmittance of an example of the antireflection film system 30 shown in FIG. 3.

Detailed Description

The technical solutions in the embodiments of the present application will be described clearly and completely with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

Referring to fig. 1, an infrared light transmitting hole structure 100 of the present application includes a substrate 10, an IR ink layer 20, and an antireflection film 30 stacked in sequence. Wherein the IR ink layer 20 is located between the substrate 10 and the antireflection film system 30. The substrate 10 is made of a transparent material, and is generally made of glass, PC, PET, PMMA, or the like, and is used for protecting the IR ink layer 20 and the antireflection film system 30. The material of the substrate 10 is a conventional substrate material, and the process is relatively easy to control in the manufacturing process of the infrared light transmitting hole structure 100. In a similar manner, IR ink layer 20 can be prepared using more conventional IR ink materials, such as IR inks of the type mastered IR 1400N or the empire IPX. Such material selection is beneficial to improving the economy and manufacturability of the infrared light transmitting hole structure 100. Furthermore, the viscosity range of the IR ink layer 20 is controlled to be 10000-50000 Pa.s. The IR printing ink material has high infrared light transmittance and can effectively block the transmission of visible light wave band light. Generally, the infrared transmittance of the stacked substrate 10 and IR ink layer 20 can reach 70-90%, and the transmittance of visible light band light is about 10%. Such an infrared anti-reflection effect is not enough to completely satisfy the working requirement of the infrared sensor, so that the anti-reflection film system 30 is further laminated on the infrared light transmission hole structure 100 to improve the transmittance of infrared light and inhibit visible light from passing through.

The antireflection film system 30 includes a silicon oxide layer 31 and a metal oxide layer 32 stacked. The film made of the silicon oxide (SiO2) has the characteristics of high hardness, good wear resistance, firm film layer, fine and compact structure and the like, and has good optical properties of high light transmittance, small scattering and absorption, and the extension of a visible light region to an ultraviolet region and the like. The silicon oxide layer 31 serves as a dielectric film and can provide functions of insulation, protection, passivation, and the like, while having a low refractive index. The metal oxide may include titanium oxide (Tio2) or zirconium oxide (ZrO 2). The film formed by the two materials has high transmittance and high refractive index in a visible light region, is firm and stable, is transparent in a visible light band and an infrared band, and has strong absorption capacity in an ultraviolet band. Meanwhile, titanium oxide and zirconium oxide are also common film materials, and have higher economical efficiency and processing technology basis.

In the research of the applicant, it is found that by controlling the total thickness ratio of the silicon oxide layer 31 and the metal oxide layer 32, the optical path length difference between the silicon oxide layer 31 and the metal oxide layer 32 can be controlled, so that the antireflection film system 30 has a better infrared light transmittance, and effectively inhibits the transmittance of ultraviolet light and visible light. The ratio of the total thickness of the silicon oxide layer 31 to the total thickness of the metal oxide layer 32 needs to be controlled to be (5.2-6.5): 1, the infrared light transmittance of the infrared light transmission hole structure 100 can reach more than 92.5%, and the visible light transmittance is controlled to be 6.62% or less.

Referring to the embodiments of fig. 2-4, the infrared light transmitting hole structure 100 of the present application provides three embodiments of antireflection film systems to achieve the above effects: