Thin film transistor, manufacturing method thereof, array substrate and display device
阅读说明:本技术 薄膜晶体管及其制造方法、阵列基板和显示装置 (Thin film transistor, manufacturing method thereof, array substrate and display device ) 是由 闫雷 李峰 方业周 樊君 李磊 孟艳艳 姚磊 薛进进 王成龙 王金锋 候林 郭 于 2019-01-29 设计创作,主要内容包括:本公开提供了一种薄膜晶体管及其制造方法、阵列基板和显示装置。所述薄膜晶体管包括:位于衬底一侧的有源层;第一层间电介质层,位于所述有源层远离所述衬底的一侧;源极,贯穿所述第一层间电介质层、且连接到所述有源层;第二层间电介质层,位于所述第一层间电介质层远离所述有源层的一侧、且覆盖所述源极;和漏极,包括第一部分,所述第一部分贯穿所述第二层间电介质层和所述第一层间电介质层、且连接到所述有源层。(The disclosure provides a thin film transistor, a manufacturing method thereof, an array substrate and a display device. The thin film transistor includes: an active layer on one side of the substrate; a first interlayer dielectric layer located on one side of the active layer away from the substrate; a source electrode penetrating the first interlayer dielectric layer and connected to the active layer; the second interlayer dielectric layer is positioned on one side, far away from the active layer, of the first interlayer dielectric layer and covers the source electrode; and a drain electrode including a first portion penetrating the second interlayer dielectric layer and the first interlayer dielectric layer and connected to the active layer.)
1. A thin film transistor, comprising:
an active layer on one side of the substrate;
a first interlayer dielectric layer located on one side of the active layer away from the substrate;
a source electrode penetrating the first interlayer dielectric layer and connected to the active layer;
the second interlayer dielectric layer is positioned on one side, far away from the active layer, of the first interlayer dielectric layer and covers the source electrode; and
a drain electrode including a first portion penetrating the second interlayer dielectric layer and the first interlayer dielectric layer and connected to the active layer.
2. The thin film transistor of claim 1, wherein the drain electrode further comprises:
a second portion connected to the first portion, on a side of the second interlayer dielectric layer away from the first interlayer dielectric layer, the second portion being configured to be connected to a first electrode.
3. The thin film transistor of claim 2, wherein an orthographic projection of the second portion of the drain on the substrate partially overlaps with an orthographic projection of the source on the substrate.
4. The thin film transistor of claim 3, wherein a second portion of the drain electrode extends on a surface of the second interlayer dielectric layer in a direction toward the source electrode.
5. The thin film transistor of any of claims 1-4, wherein the active layer has at least one of a first recess and a second recess, wherein:
the source contacts the bottom and sides of the first recess and the first portion of the drain contacts the bottom and sides of the second recess.
6. The thin film transistor of claim 5, further comprising a buffer layer between the substrate and the active layer, wherein at least one of the first portions of the source and drain electrodes extends into the buffer layer.
7. The thin film transistor of claim 6, further comprising:
a light shielding layer located between the substrate and the buffer layer;
wherein an orthographic projection of the active layer on the substrate overlaps with an orthographic projection of the light shielding layer on the substrate.
8. The thin film transistor of claim 7, wherein the thin film transistor comprises a gate dielectric layer and a gate, wherein:
the gate dielectric layer is positioned on one side of the active layer far away from the substrate;
the gate is positioned on one side of the gate dielectric layer far away from the active layer;
the first interlayer dielectric layer is positioned on one side of the gate dielectric layer far away from the substrate and covers the gate.
9. The thin film transistor of claim 8, wherein the material of the active layer comprises polysilicon.
10. An array substrate, comprising:
the thin film transistor according to any one of claims 1 to 9.
11. The array substrate of claim 10, further comprising:
a planarization layer on a side of the second interlayer dielectric layer of the thin film transistor away from the first interlayer dielectric layer, the planarization layer having an opening extending to a second portion of the drain of the thin film transistor; and
a first electrode at least partially disposed in the opening and in contact with a second portion of the drain electrode.
12. The array substrate of claim 11, wherein the first electrode is a pixel anode;
the array substrate further includes: the insulating layer is positioned on one side of the second part of the first electrode, which is far away from the drain electrode;
and the common electrode is positioned on one side of the insulating layer, which is far away from the first electrode.
13. The array substrate of claim 11, wherein the first electrode is an anode.
14. A display device, comprising: the array substrate of any one of claims 10-13.
15. A method of manufacturing a thin film transistor, comprising:
forming an active layer on one side of a substrate;
forming a first interlayer dielectric layer on one side of the active layer away from the substrate;
forming a source electrode penetrating the first interlayer dielectric layer and connected to the active layer;
forming a second interlayer dielectric layer which is positioned on one side of the first interlayer dielectric layer far away from the active layer and covers the source electrode; and
forming a drain electrode including a first portion penetrating the second interlayer dielectric layer and the first interlayer dielectric layer and connected to the active layer.
16. The method of claim 15, wherein forming a source electrode through the first interlayer dielectric layer and connected to the active layer comprises:
forming a first opening through the first interlayer dielectric layer, the first opening exposing a portion of the active layer;
forming the source electrode at least partially in the first opening and in contact with the active layer.
17. The method of claim 16, wherein forming a drain comprises:
forming a second opening through the second interlayer dielectric layer and the first interlayer dielectric layer, the second opening exposing a portion of the active layer;
and forming the drain electrode, wherein a first part of the drain electrode is positioned in the second opening and is in contact with the active layer.
18. The method of claim 17, wherein forming an active layer on one side of the substrate comprises:
forming a buffer layer on the one side of the substrate;
forming the active layer on one side of the buffer layer far away from the substrate;
wherein at least one of the first portions of the source and drain extends into the buffer layer.
19. The method of claim 18, wherein forming a buffer layer on the one side of the substrate comprises:
forming a light-shielding layer on the one side of the substrate;
forming the buffer layer on the one side of the substrate and covering the light-shielding layer;
wherein an orthographic projection of the active layer on the substrate at least partially overlaps with an orthographic projection of the light shielding layer on the substrate.
20. The method of claim 19, further comprising:
after an active layer on one side of the substrate is formed, a gate dielectric layer is formed on one side, far away from the substrate, of the active layer;
forming a gate on the side of the gate dielectric layer far away from the active layer;
wherein the first interlayer dielectric layer is positioned on one side of the gate dielectric layer far away from the substrate and covers the gate.
Technical Field
The present disclosure relates to the field of display technologies, and in particular, to a thin film transistor, a method for manufacturing the thin film transistor, an array substrate, and a display device.
Background
To meet the high resolution display requirement, the PPI (pixel Per Inch, number of Pixels Per Inch) of the display panel needs to be higher and higher. Especially, display products based on VR (Virtual Reality) technology have more stringent requirements on resolution.
Disclosure of Invention
According to an aspect of the embodiments of the present disclosure, there is provided a thin film transistor including: an active layer on one side of the substrate; a first interlayer dielectric layer located on one side of the active layer away from the substrate; a source electrode penetrating the first interlayer dielectric layer and connected to the active layer; the second interlayer dielectric layer is positioned on one side, far away from the active layer, of the first interlayer dielectric layer and covers the source electrode; and a drain electrode including a first portion penetrating the second interlayer dielectric layer and the first interlayer dielectric layer and connected to the active layer.
In some embodiments, the drain further comprises: a second portion connected to the first portion, on a side of the second interlayer dielectric layer away from the first interlayer dielectric layer, the second portion being configured to be connected to a first electrode.
In some embodiments, an orthographic projection of the second portion of the drain on the substrate partially overlaps an orthographic projection of the source on the substrate.
In some embodiments, a second portion of the drain extends on a surface of the second interlayer dielectric layer in a direction toward the source.
In some embodiments, the active layer has at least one of a first recess and a second recess, wherein: the source contacts the bottom and sides of the first recess and the first portion of the drain contacts the bottom and sides of the second recess.
In some embodiments, the thin film transistor further comprises a buffer layer between the substrate and the active layer, wherein at least one of the first portions of the source and drain electrodes extends into the buffer layer.
In some embodiments, the thin film transistor further comprises: a light shielding layer located between the substrate and the buffer layer; wherein an orthographic projection of the active layer on the substrate overlaps with an orthographic projection of the light shielding layer on the substrate.
In some embodiments, the thin film transistor comprises a gate dielectric layer and a gate, wherein: the gate dielectric layer is positioned on one side of the active layer far away from the substrate; the gate is positioned on one side of the gate dielectric layer far away from the active layer; the first interlayer dielectric layer is positioned on one side of the gate dielectric layer far away from the substrate and covers the gate.
In some embodiments, the material of the active layer comprises polysilicon.
According to another aspect of the embodiments of the present disclosure, there is provided an array substrate including: the thin film transistor according to any one of the above embodiments.
In some embodiments, the array substrate further comprises: a planarization layer on a side of the second interlayer dielectric layer of the thin film transistor away from the first interlayer dielectric layer, the planarization layer having an opening extending to a second portion of the drain of the thin film transistor; and a first electrode at least partially located in the opening and in contact with a second portion of the drain electrode.
In some embodiments, the first electrode is a pixel anode; the array substrate further includes: the insulating layer is positioned on one side of the second part of the first electrode, which is far away from the drain electrode; and the common electrode is positioned on one side of the insulating layer, which is far away from the first electrode.
In some embodiments, the first electrode is an anode.
According to still another aspect of the embodiments of the present disclosure, there is provided a display device including: the array substrate according to any of the above embodiments.
According to still another aspect of the embodiments of the present disclosure, there is provided a method of manufacturing a thin film transistor, including: forming an active layer on one side of a substrate; forming a first interlayer dielectric layer on one side of the active layer away from the substrate; forming a source electrode penetrating the first interlayer dielectric layer and connected to the active layer; forming a second interlayer dielectric layer which is positioned on one side of the first interlayer dielectric layer far away from the active layer and covers the source electrode; and forming a drain electrode including a first portion penetrating the second interlayer dielectric layer and the first interlayer dielectric layer and connected to the active layer.
In some embodiments, forming a source electrode through the first interlayer dielectric layer and connected to the active layer comprises: forming a first opening through the first interlayer dielectric layer, the first opening exposing a portion of the active layer; forming the source electrode at least partially in the first opening and in contact with the active layer.
In some embodiments, forming the drain comprises: forming a second opening through the second interlayer dielectric layer and the first interlayer dielectric layer, the second opening exposing a portion of the active layer; and forming the drain electrode, wherein a first part of the drain electrode is positioned in the second opening and is in contact with the active layer.
In some embodiments, forming an active layer on one side of the substrate comprises: forming a buffer layer on the one side of the substrate; forming the active layer on one side of the buffer layer far away from the substrate; wherein at least one of the first portions of the source and drain extends into the buffer layer.
In some embodiments, forming a buffer layer on the one side of the substrate comprises: forming a light-shielding layer on the one side of the substrate; forming the buffer layer on the one side of the substrate and covering the light-shielding layer; wherein an orthographic projection of the active layer on the substrate at least partially overlaps with an orthographic projection of the light shielding layer on the substrate.
In some embodiments, the method further comprises: after an active layer on one side of the substrate is formed, a gate dielectric layer is formed on one side, far away from the substrate, of the active layer; forming a gate on the side of the gate dielectric layer far away from the active layer; wherein the first interlayer dielectric layer is positioned on one side of the gate dielectric layer far away from the substrate and covers the gate.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the disclosure and together with the description, serve to explain the principles of the disclosure.
The present disclosure may be more clearly understood from the following detailed description, taken with reference to the accompanying drawings, in which:
fig. 1 is a schematic structural diagram of a thin film transistor according to one embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of a thin film transistor according to another embodiment of the present disclosure;
fig. 3 is a schematic structural diagram of a thin film transistor according to yet another embodiment of the present disclosure;
fig. 4 is a schematic structural diagram of a thin film transistor according to yet another embodiment of the present disclosure;
fig. 5 is a schematic structural diagram of a thin film transistor according to yet another embodiment of the present disclosure;
fig. 6 is a schematic structural view of an array substrate according to an embodiment of the present disclosure;
fig. 7 is a schematic structural view of an array substrate according to another embodiment of the present disclosure;
FIG. 8 is a schematic flow chart diagram of a method of fabricating a thin film transistor according to one embodiment of the present disclosure;
fig. 9A-9G illustrate schematic cross-sectional views of structures resulting from different stages of forming a thin film transistor, according to some embodiments of the present disclosure.
It should be understood that the dimensions of the various parts shown in the figures are not drawn to scale. Further, the same or similar reference numerals denote the same or similar components.
Detailed Description
Various exemplary embodiments of the present disclosure will now be described in detail with reference to the accompanying drawings. The description of the exemplary embodiments is merely illustrative and is in no way intended to limit the disclosure, its application, or uses. The present disclosure may be embodied in many different forms and is not limited to the embodiments described herein. These embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art. It should be noted that: the relative arrangement of parts and steps, the composition of materials, numerical expressions and numerical values set forth in these embodiments are to be construed as merely illustrative, and not as limitative, unless specifically stated otherwise.
The use of "first," "second," and similar terms in this disclosure is not intended to indicate any order, quantity, or importance, but rather are used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that the element preceding the word covers the element listed after the word, and does not exclude the possibility that other elements are also covered. "upper", "lower", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships may also be changed accordingly.
In the present disclosure, when a specific component is described as being located between a first component and a second component, there may or may not be intervening components between the specific component and the first component or the second component. When it is described that a specific component is connected to other components, the specific component may be directly connected to the other components without having an intervening component, or may be directly connected to the other components without having an intervening component.
All terms (including technical or scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs unless specifically defined otherwise. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
Techniques, methods, and apparatus known to those of ordinary skill in the relevant art may not be discussed in detail but are intended to be part of the specification where appropriate.
When the PPI is large, the Pitch (Pitch) between adjacent sub-pixels needs to be small. The inventors have noticed that, since the pitch between adjacent sub-pixels is small, when forming the source and drain electrodes of the thin film transistor in each sub-pixel, the source and drain electrodes are easily overlapped, resulting in poor reliability of the thin film transistor, thereby generating a display defect such as a dark spot, which affects the display effect.
Therefore, the embodiment of the disclosure provides the following technical solutions.
Fig. 1 is a schematic structural diagram of a thin film transistor according to one embodiment of the present disclosure.
As shown in fig. 1, the
The
The
The first
The
The second
The
In the above embodiment, the
Fig. 2 is a schematic structural diagram of a thin film transistor according to another embodiment of the present disclosure.
In contrast to the
In some embodiments, the orthographic projection of the
In the above embodiment, the
Fig. 3 is a schematic structural diagram of a thin film transistor according to yet another embodiment of the present disclosure.
In contrast to the
Fig. 4 is a schematic structural diagram of a thin film transistor according to still another embodiment of the present disclosure.
In contrast to the thin film transistor 300 shown in fig. 3, the
At least one of the
Fig. 5 is a schematic structural diagram of a thin film transistor according to yet another embodiment of the present disclosure.
In contrast to the
The
It should be noted that, although fig. 3-5 illustrate the
Fig. 6 is a schematic structural diagram of an array substrate according to an embodiment of the present disclosure.
As shown in fig. 6, the
In some embodiments, the
The
The
In some embodiments, the
In other embodiments, the
Fig. 7 is a schematic structural view of an array substrate according to another embodiment of the present disclosure.
Compared to the
The embodiment of the disclosure also provides a display device. The display device may include the
In some embodiments, the display device may be an Organic Light-emitting diode (OLED) display panel. In other embodiments, the display device may be a liquid crystal display panel. Because the source electrode and the drain electrode of the thin film transistor in the display panel are positioned at different layers, the occurrence of poor display phenomena such as dark spots and the like caused by the lap joint of the source electrode and the drain electrode is reduced, and the display effect of the display panel is improved.
Fig. 8 is a flow chart illustrating a method of fabricating a thin film transistor according to one embodiment of the present disclosure. Fig. 9A-9G illustrate schematic cross-sectional views of structures resulting from different stages of forming a thin film transistor, according to some embodiments of the present disclosure. A process of forming a thin film transistor according to some embodiments of the present disclosure is described below with reference to fig. 8 and 9A-9G.
In
In some implementations, the
In some embodiments, referring to fig. 9A, after forming the
In other embodiments, a gate may be formed on a side of the
At
At
For example, a first opening 10 may be formed through the first
In some embodiments, in the case of forming the
In
In
For example, a second opening 20 may be formed through the second
In some embodiments, in the case of forming the
Thus, various embodiments of the present disclosure have been described in detail. Some details that are well known in the art have not been described in order to avoid obscuring the concepts of the present disclosure. It will be fully apparent to those skilled in the art from the foregoing description how to practice the presently disclosed embodiments.
Although some specific embodiments of the present disclosure have been described in detail by way of example, it should be understood by those skilled in the art that the foregoing examples are for purposes of illustration only and are not intended to limit the scope of the present disclosure. It will be understood by those skilled in the art that various changes may be made in the above embodiments or equivalents may be substituted for elements thereof without departing from the scope and spirit of the present disclosure. The scope of the present disclosure is defined by the appended claims.