阅读说明：本技术 半导体装置及半导体装置的制造方法 (Semiconductor device and method for manufacturing semiconductor device ) 是由 山崎舜平 村川努 安藤善范 掛端哲弥 佐藤优一 方堂凉太 于 2020-04-28 设计创作，主要内容包括：提供一种晶体管特性的不均匀少的半导体装置。本发明的一个方式是一种半导体装置,包括：第一绝缘体；第一绝缘体上的第一氧化物；第一氧化物上的第一导电体及第二导电体；与第一氧化物的侧面接触的第一层及第二层；第一绝缘体、第一层、第二层、第一导电体及第二导电体上的第二绝缘体；第二绝缘体上的第三绝缘体；配置在第一导电体与第二导电体之间且第一氧化物上的第二氧化物；第二氧化物上的第四绝缘体；以及第四绝缘体上的第三导电体,其中,第一层及第二层各自包含第一导电体及第二导电体所含有的金属,并且,与第二绝缘体接触的区域中的第一绝缘体具有金属的浓度比第一层或第二层低的区域。(A semiconductor device with less variation in transistor characteristics is provided. One embodiment of the present invention is a semiconductor device including: a first insulator; a first oxide over the first insulator; a first conductor and a second conductor over the first oxide; a first layer and a second layer in contact with side surfaces of the first oxide; a first insulator, a first layer, a second layer, a first conductor, and a second insulator on the second conductor; a third insulator on the second insulator; a second oxide disposed between the first conductor and the second conductor and over the first oxide; a fourth insulator on the second oxide; and a third conductor on the fourth insulator, wherein the first layer and the second layer each contain a metal contained in the first conductor and the second conductor, and the first insulator in a region in contact with the second insulator has a region in which the concentration of the metal is lower than that in the first layer or the second layer.)