阅读说明：本技术 薄膜晶体管及其制备方法、阵列基板、显示装置 (Thin film transistor, preparation method thereof, array substrate and display device ) 是由 罗超 关峰 王治 杜建华 吕杨 强朝辉 李超 于 2020-03-27 设计创作，主要内容包括：一种薄膜晶体管,包括：栅极、栅绝缘层、有源层、离子化非晶硅层、源极和漏极；所述栅绝缘层覆盖于所述栅极上；所述有源层设置于所述栅绝缘层远离所述栅极一侧；所述离子化非晶硅层设置于所述有源层远离所述栅极一侧,所述离子化非晶硅层与所述栅绝缘层接触；所述源极和所述漏极设置于所述离子化非晶硅层远离所述栅绝缘层一侧,所述源极和所述漏极通过所述离子化非晶硅层与所述有源层耦接。(A thin film transistor, comprising: the gate electrode, the gate insulating layer, the active layer, the ionized amorphous silicon layer, the source electrode and the drain electrode; the grid insulating layer covers the grid electrode; the active layer is arranged on one side, far away from the grid electrode, of the grid insulating layer; the ionized amorphous silicon layer is arranged on one side, away from the grid electrode, of the active layer and is in contact with the grid insulating layer; the source electrode and the drain electrode are arranged on one side, far away from the gate insulating layer, of the ionized amorphous silicon layer, and the source electrode and the drain electrode are coupled with the active layer through the ionized amorphous silicon layer.)