Memory control method, memory storage device and memory control circuit unit
阅读说明:本技术 存储器控制方法、存储器存储装置及存储器控制电路单元 (Memory control method, memory storage device and memory control circuit unit ) 是由 郭哲岳 陈鼎元 于 2019-04-01 设计创作,主要内容包括:本发明的范例实施例提供一种存储器控制方法、存储器存储装置及存储器控制电路单元,存储器控制方法用于可复写式非易失性存储器模块。所述方法包括:在所述可复写式非易失性存储器模块中维护第一管理信息,其用以识别第一管理单元;在数据整并操作中,在不从所述可复写式非易失性存储器模块读取第一映射信息的前提下,根据所述第一管理信息从所述第一管理单元收集第一有效数据,其中所述第一映射信息包括与所述第一有效数据有关的逻辑至实体映射信息;以及将所收集的所述第一有效数据存储至回收单元。(An exemplary embodiment of the invention provides a memory control method, a memory storage device and a memory control circuit unit. The method comprises the following steps: maintaining first management information in the rewritable nonvolatile memory module, wherein the first management information is used for identifying a first management unit; collecting first valid data from the first management unit according to first management information without reading the first mapping information from the rewritable non-volatile memory module in a data merging operation, wherein the first mapping information comprises logic-to-entity mapping information related to the first valid data; and storing the collected first valid data to a recovery unit.)
1. A memory control method for a rewritable nonvolatile memory module, wherein the rewritable nonvolatile memory module includes a plurality of management units, the memory control method comprising:
maintaining first management information in the rewritable non-volatile memory module, wherein the first management information is used for identifying a first management unit in the plurality of management units;
collecting first valid data from the first management unit according to first management information without reading the first mapping information from the rewritable non-volatile memory module in a data merging operation, wherein the first mapping information comprises logic-to-entity mapping information related to the first valid data; and
storing the collected first valid data to a recovery unit.
2. The memory control method according to claim 1, wherein the step of collecting the first valid data from the first management unit according to the first management information without reading the first mapping information from the rewritable non-volatile memory module includes:
reading second management information from the first management unit, wherein the second management information is used for identifying at least one first entity unit storing the first valid data in the first management unit; and
and collecting the first valid data from the at least one first entity unit according to the second management information.
3. The memory control method of claim 2, wherein each physical unit of the at least one first physical unit comprises a plurality of consecutive physical nodes, and the plurality of consecutive physical nodes are configured to store at least a portion of the first valid data.
4. The memory control method of claim 1, further comprising:
updating third management information in response to the collection of the first valid data, wherein the third management information includes index information to read the logic-to-entity mapping information related to the first valid data.
5. The memory control method of claim 4, further comprising:
reading second mapping information from the rewritable non-volatile memory module according to the updated third management information, wherein the second mapping information comprises logic-to-entity mapping information related to second valid data;
collecting the second valid data from at least one second entity unit in the first management unit according to the second mapping information; and
storing the collected second valid data to the recovery unit.
6. The memory control method according to claim 1, wherein the step of maintaining the first management information in the rewritable non-volatile memory module includes:
adding identification information corresponding to the first management unit to the first management information in response to satisfaction of a first condition,
wherein the first condition comprises at least one of the following conditions:
the first management unit comprises a plurality of continuous physical nodes, and the plurality of continuous physical nodes are used for storing at least part of the first valid data; and
the logical range to which the first valid data belongs is different from the logical range to which the remaining valid data in the first management unit belongs.
7. The memory control method of claim 6, wherein the step of maintaining the first management information in the rewritable non-volatile memory module further comprises:
removing the identification information corresponding to the first management unit from the first management information in response to the first condition not being satisfied.
8. A memory storage device, comprising:
a connection interface unit for connecting to a host system;
a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module comprises a plurality of management units; and
a memory control circuit unit connected to the connection interface unit and the rewritable nonvolatile memory module,
wherein the memory control circuit unit is configured to maintain first management information in the rewritable non-volatile memory module, and the first management information is configured to identify a first management unit of the plurality of management units,
the memory control circuit unit is further configured to collect first valid data from the first management unit according to first management information without reading the first mapping information from the rewritable non-volatile memory module in a data consolidation operation, wherein the first mapping information includes logic-to-entity mapping information related to the first valid data, and
the memory control circuit unit is also configured to send a write instruction sequence to instruct storing of the collected first valid data to a reclamation unit.
9. The memory storage device according to claim 8, wherein the operation of the memory control circuit unit collecting the first valid data from the first management unit according to the first management information without reading the first mapping information from the rewritable non-volatile memory module includes:
instructing reading of second management information from the first management unit, wherein the second management information is used for identifying at least one first entity unit storing the first valid data in the first management unit; and
and collecting the first valid data from the at least one first entity unit according to the second management information.
10. The memory storage device of claim 9, wherein each physical unit of the at least one first physical unit comprises a plurality of consecutive physical nodes, and the plurality of consecutive physical nodes are configured to store at least a portion of the first valid data.
11. The memory storage device of claim 8, wherein the memory control circuitry unit is further to update third management information in response to the collection of the first valid data, wherein the third management information includes index information to read the logic-to-entity mapping information related to the first valid data.
12. The memory storage device of claim 11, wherein the memory control circuitry unit is further configured to read second mapping information from the rewritable non-volatile memory module according to the updated third management information, wherein the second mapping information comprises logic-to-entity mapping information related to second valid data;
collecting the second valid data from at least one second entity unit in the first management unit according to the second mapping information; and
instructing to store the collected second valid data to the recycle unit.
13. The memory storage device of claim 8, wherein the operation of the memory control circuitry to maintain the first management information in the rewritable non-volatile memory module comprises:
adding identification information corresponding to the first management unit to the first management information in response to satisfaction of a first condition,
wherein the first condition comprises at least one of the following conditions:
the first management unit comprises a plurality of continuous physical nodes, and the plurality of continuous physical nodes are used for storing at least part of the first valid data; and
the logical range to which the first valid data belongs is different from the logical range to which the remaining valid data in the first management unit belongs.
14. The memory storage device of claim 13, wherein the operation of the memory control circuitry to maintain the first management information in the rewritable non-volatile memory module further comprises:
removing the identification information corresponding to the first management unit from the first management information in response to the first condition not being satisfied.
15. A memory control circuit unit for controlling a rewritable nonvolatile memory module, wherein the rewritable nonvolatile memory module includes a plurality of management units, wherein the memory control circuit unit includes:
a host interface for connecting to a host system;
a memory interface for connecting to the rewritable nonvolatile memory module; and
a memory management circuit connected to the host interface and the memory interface,
wherein the memory management circuit is configured to maintain first management information in the rewritable non-volatile memory module, and the first management information is configured to identify a first management unit of the plurality of management units,
the memory management circuit is further configured to collect first valid data from the first management unit according to first management information without reading the first mapping information from the rewritable non-volatile memory module in a data merging operation, wherein the first mapping information includes logic-to-entity mapping information related to the first valid data, and
the memory management circuit is also to send a write instruction sequence to instruct storing of the collected first valid data to a reclaim unit.
16. The memory control circuit unit of claim 15, wherein the operation of the memory management circuit to collect the first valid data from the first management unit according to the first management information without reading the first mapping information from the rewritable non-volatile memory module comprises:
instructing reading of second management information from the first management unit, wherein the second management information is used for identifying at least one first entity unit storing the first valid data in the first management unit; and
and collecting the first valid data from the at least one first entity unit according to the second management information.
17. The memory control circuit unit of claim 16, wherein each physical unit of the at least one first physical unit comprises a plurality of consecutive physical nodes, and the plurality of consecutive physical nodes are configured to store at least a portion of the first valid data.
18. The memory control circuitry unit of claim 15, wherein the memory management circuitry is further to update third management information in response to the collection of the first valid data, wherein the third management information includes index information to read the logic-to-entity mapping information related to the first valid data.
19. The memory control circuit unit of claim 18, wherein the memory management circuit is further configured to read second mapping information from the rewritable non-volatile memory module according to the updated third management information, wherein the second mapping information comprises logic-to-entity mapping information related to second valid data;
collecting the second valid data from at least one second entity unit in the first management unit according to the second mapping information; and
instructing to store the collected second valid data to the recycle unit.
20. The memory control circuitry unit of claim 15, wherein the operation of the memory management circuitry to maintain the first management information in the rewritable non-volatile memory module comprises:
adding identification information corresponding to the first management unit to the first management information in response to satisfaction of a first condition,
wherein the first condition comprises at least one of the following conditions:
the first management unit comprises a plurality of continuous physical nodes, and the plurality of continuous physical nodes are used for storing at least part of the first valid data; and
the logical range to which the first valid data belongs is different from the logical range to which the remaining valid data in the first management unit belongs.
21. The memory control circuitry unit of claim 20, wherein the operation of the memory management circuitry to maintain the first management information in the rewritable non-volatile memory module further comprises:
removing the identification information corresponding to the first management unit from the first management information in response to the first condition not being satisfied.
Technical Field
The present invention relates to a memory control technology, and more particularly, to a memory control method, a memory storage device, and a memory control circuit unit.
Background
Digital cameras, mobile phones and MP3 players have grown rapidly over the years, resulting in a rapid increase in consumer demand for storage media. Since a rewritable non-volatile memory module (e.g., a flash memory) has the characteristics of non-volatility, power saving, small volume, and no mechanical structure, it is very suitable for being built in various portable multimedia devices.
When the memory storage device leaves a factory, a part of the management units in the memory storage device are configured as a plurality of idle management units, so as to store new data by using the idle management units. After a period of use, the number of idle management units in the memory storage device is gradually reduced. The memory storage device may copy valid data from a plurality of source units to a recovery unit (also referred to as a target unit) through a data merging procedure (or called a garbage collection procedure) and erase management units belonging to the source units to release new idle management units. However, in the data merging program, if the logical units mapped by the plurality of management units selected as the source units are more distributed, more tables for describing the management information (e.g., mapping information) of the logical units need to be accessed, thereby prolonging the time for executing the data merging program and/or reducing the execution efficiency of the data merging program.
Disclosure of Invention
The present invention provides a memory control method, a memory storage device and a memory control circuit unit, which can effectively improve the above problems and/or increase the system performance of the memory storage device.
An exemplary embodiment of the present invention provides a memory control method for a rewritable nonvolatile memory module. The rewritable nonvolatile memory module comprises a plurality of management units. The memory control method includes: maintaining first management information in the rewritable non-volatile memory module, the first management information identifying a first management unit of the plurality of management units; collecting first valid data from the first management unit according to first management information without reading the first mapping information from the rewritable non-volatile memory module in a data merging operation, wherein the first mapping information comprises logic-to-entity mapping information related to the first valid data; and storing the collected first valid data to a recovery unit.
In an exemplary embodiment of the invention, the collecting the first valid data from the first management unit according to the first management information without reading the first mapping information from the rewritable non-volatile memory module includes: reading second management information from the first management unit, wherein the second management information is used for identifying at least one first entity unit storing the first valid data in the first management unit; and collecting the first valid data from the at least one first entity unit according to the second management information.
In an exemplary embodiment of the invention, the memory control method further includes: updating third management information in response to the collection of the first valid data, wherein the third management information includes index information to read the logic-to-entity mapping information related to the first valid data.
In an exemplary embodiment of the invention, the memory control method further includes: reading second mapping information from the rewritable non-volatile memory module according to the updated third management information, wherein the second mapping information comprises logic-to-entity mapping information related to second valid data; collecting the second valid data from at least one second entity unit in the first management unit according to the second mapping information; and storing the collected second valid data to the recycle unit.
In an exemplary embodiment of the invention, the step of maintaining the first management information in the rewritable non-volatile memory module includes: in response to satisfaction of a first condition, including at least one of: the first management unit comprises a plurality of continuous physical nodes, and the plurality of continuous physical nodes are used for storing at least part of the first valid data; and the logical range to which the first valid data belongs is different from the logical range to which the remaining valid data in the first management unit belongs.
In an exemplary embodiment of the invention, the step of maintaining the first management information in the rewritable non-volatile memory module further includes: removing the identification information corresponding to the first management unit from the first management information in response to the first condition not being satisfied.
An exemplary embodiment of the present invention further provides a memory storage device, which includes a connection interface unit, a rewritable nonvolatile memory module and a memory control circuit unit. The connection interface unit is used for connecting to a host system. The rewritable nonvolatile memory module comprises a plurality of management units. The memory control circuit unit is connected to the connection interface unit and the rewritable nonvolatile memory module, wherein the memory control circuit unit is used for maintaining first management information in the rewritable non-volatile memory module, and the first management information is used for identifying a first management unit in the plurality of management units, the memory control circuit unit is also used for controlling the memory controller to operate in data merging operation, collecting first valid data from the first management unit according to the first management information without reading first mapping information from the rewritable non-volatile memory module, wherein the first mapping information comprises logic-to-entity mapping information related to the first valid data, and the memory control circuit unit is further configured to send a write instruction sequence to instruct to store the collected first valid data to a reclamation unit.
In an exemplary embodiment of the invention, the operation of the memory control circuit unit collecting the first valid data from the first management unit according to the first management information without reading the first mapping information from the rewritable non-volatile memory module includes: instructing reading of second management information from the first management unit, wherein the second management information is used for identifying at least one first entity unit storing the first valid data in the first management unit; and collecting the first valid data from the at least one first entity unit according to the second management information.
In an example embodiment of the present invention, the memory control circuit unit is further configured to update third management information in response to the collection of the first valid data, wherein the third management information includes index information for reading the logic-to-entity mapping information related to the first valid data.
In an example embodiment of the present invention, the memory control circuit unit is further configured to read second mapping information from the rewritable non-volatile memory module according to the updated third management information, wherein the second mapping information includes logic-to-entity mapping information related to second valid data; collecting the second valid data from at least one second entity unit in the first management unit according to the second mapping information; and instructing to store the collected second valid data to the recycle unit.
In an exemplary embodiment of the invention, the operation of the memory control circuit unit maintaining the first management information in the rewritable non-volatile memory module includes: in response to satisfaction of a first condition, including at least one of: the first management unit comprises a plurality of continuous physical nodes, and the plurality of continuous physical nodes are used for storing at least part of the first valid data; and the logical range to which the first valid data belongs is different from the logical range to which the remaining valid data in the first management unit belongs.
In an exemplary embodiment of the invention, the operation of the memory control circuit unit maintaining the first management information in the rewritable non-volatile memory module further includes: removing the identification information corresponding to the first management unit from the first management information in response to the first condition not being satisfied.
An exemplary embodiment of the present invention further provides a memory control circuit unit for controlling a rewritable nonvolatile memory module, wherein the rewritable nonvolatile memory module includes a plurality of management units, and the memory control circuit unit includes a host interface, a memory interface, and a memory management circuit. The host interface is used for connecting to a host system. The memory interface is used for connecting to the rewritable nonvolatile memory module. The memory management circuit is connected to the host interface and the memory interface, wherein the memory management circuit is used for maintaining first management information in the rewritable non-volatile memory module, and the first management information is used to identify a first management unit of the plurality of management units, the memory management circuit is further used to, in a data union operation, collecting first valid data from the first management unit according to the first management information without reading first mapping information from the rewritable non-volatile memory module, wherein the first mapping information comprises logic-to-entity mapping information related to the first valid data, and the memory management circuitry is further to send a sequence of write instructions to instruct storage of the collected first valid data to a reclaim unit.
In an exemplary embodiment of the invention, the operation of the memory management circuit collecting the first valid data from the first management unit according to the first management information without reading the first mapping information from the rewritable non-volatile memory module includes: instructing reading of second management information from the first management unit, wherein the second management information is used for identifying at least one first entity unit storing the first valid data in the first management unit; and collecting the first valid data from the at least one first entity unit according to the second management information.
In an exemplary embodiment of the invention, each entity unit of the at least one first entity unit includes a plurality of consecutive entity nodes, and the plurality of consecutive entity nodes are configured to store at least a portion of the first valid data.
In an example embodiment of the present invention, the memory management circuit is further configured to update third management information in response to the collection of the first valid data, wherein the third management information includes index information for reading the logic-to-entity mapping information associated with the first valid data.
In an example embodiment of the present invention, the memory management circuit is further configured to read second mapping information from the rewritable non-volatile memory module according to the updated third management information, wherein the second mapping information includes logic-to-entity mapping information related to second valid data; collecting the second valid data from at least one second entity unit in the first management unit according to the second mapping information; and instructing to store the collected second valid data to the recycle unit.
In an exemplary embodiment of the invention, the operation of the memory management circuit to maintain the first management information in the rewritable non-volatile memory module includes: in response to satisfaction of a first condition, including at least one of: the first management unit comprises a plurality of continuous physical nodes, and the plurality of continuous physical nodes are used for storing at least part of the first valid data; and the logical range to which the first valid data belongs is different from the logical range to which the remaining valid data in the first management unit belongs.
In an example embodiment of the present invention, the operation of the memory management circuit maintaining the first management information in the rewritable non-volatile memory module further includes: removing the identification information corresponding to the first management unit from the first management information in response to the first condition not being satisfied.
Based on the above, the first management information for identifying the first management unit from the plurality of management units can be maintained in the rewritable non-volatile memory module. In the data merging operation, first valid data may be collected from the first management unit according to the first management information and stored to a recycling unit without reading first mapping information from the rewritable non-volatile memory module. The first mapping information includes logic-to-entity mapping information related to the first valid data. Therefore, the time for executing the data merging program can be effectively shortened and/or the execution efficiency of the data merging program can be improved, and the system efficiency of the memory storage device can be further improved.
In order to make the aforementioned and other features and advantages of the invention more comprehensible, embodiments accompanied with figures are described in detail below.
Drawings
FIG. 1 is a diagram illustrating a host system, a memory storage device, and an input/output (I/O) device according to an example embodiment of the present invention;
FIG. 2 is a diagram illustrating a host system, a memory storage device, and an I/O device according to another example embodiment of the present invention;
FIG. 3 is a schematic diagram of a host system and a memory storage device according to another exemplary embodiment of the invention;
FIG. 4 is a schematic block diagram of a memory storage device according to an exemplary embodiment of the present invention;
FIG. 5 is a schematic block diagram illustrating a memory control circuit unit according to an exemplary embodiment of the present invention;
FIG. 6 is a diagram illustrating management of a rewritable nonvolatile memory module according to an exemplary embodiment of the present invention;
FIG. 7 is a diagram illustrating a host write operation and a data merge operation according to an exemplary embodiment of the present invention;
FIG. 8 is a diagram illustrating management of a rewritable nonvolatile memory module according to an exemplary embodiment of the present invention;
FIG. 9 is a diagram illustrating a management unit according to an exemplary embodiment of the present invention;
fig. 10 is a diagram illustrating first management information according to an exemplary embodiment of the present invention;
FIG. 11 is a diagram illustrating a first management unit according to an exemplary embodiment of the present invention;
FIG. 12 is a diagram illustrating second management information according to an exemplary embodiment of the present invention;
fig. 13 is a diagram illustrating third management information according to an exemplary embodiment of the present invention;
FIG. 14 is a diagram illustrating a data merging operation according to an exemplary embodiment of the present invention;
FIG. 15 is a diagram illustrating a data merging operation according to an exemplary embodiment of the present invention;
FIG. 16 is a flowchart illustrating a memory control method according to an exemplary embodiment of the invention;
FIG. 17 is a flowchart illustrating a memory control method according to an exemplary embodiment of the invention.
Description of the reference numerals
10. 30: memory storage device
11. 31: host system
110: system bus
111: processor with a memory having a plurality of memory cells
112: random access memory
113: read-only memory
114: data transmission interface
12: input/output (I/O) device
20: main machine board
201: u disk
202: memory card
203: solid state disk
204: wireless memory storage device
205: global positioning system module
206: network interface card
207: wireless transmission device
208: keyboard with a keyboard body
209: screen
210: horn type loudspeaker
32: SD card
33: CF card
34: embedded memory device
341: embedded multimedia card
342: embedded multi-chip packaging storage device
402: connection interface unit
404: memory control circuit unit
406: rewritable nonvolatile memory module
502: memory management circuit
504: host interface
506: memory interface
508: error checking and correcting circuit
510: buffer memory
512: power management circuit
601: storage area
602: idle zone
603: system area
610(0) - (610 (C), P1-P42: entity node
612(0) to 612 (D): logic unit
701. 702: data of
710: host unit
720: source unit
730: recovery unit
80(1) to 80 (m): channel
81(1) -81 (n): management unit
CE (1), CE (2): chip enable
PL (1), PL (2): plane surface
1001. 1201 and 1301: form information
PU (1) to PU (16): entity unit
1501: logic to entity mapping table
S1601: step (maintaining first management information in a rewritable non-volatile memory module for identifying a first management unit of a plurality of management units)
S1602: step (in the data integration operation, on the premise of not reading the first mapping information from the rewritable nonvolatile memory module, collecting the first effective data from the first management unit according to the first management information, wherein the first mapping information comprises logic-to-entity mapping information related to the first effective data)
S1603: step (storing the collected first valid data to the recycle unit)
S1701: step (operation and integration of starting data)
S1702: step (selecting the first management unit based on the first management information)
S1703: step (fetching second management information from the first management unit, identifying at least one entity unit of the first management unit storing the first valid data)
S1704: a step of collecting first effective data from the at least one entity unit and storing the first effective data in a recovery unit based on the second management information
S1705: step (reading second mapping information from rewritable nonvolatile memory module)
S1706: step (collecting second effective data from the first management unit and storing the second effective data to the recycle unit according to the second mapping information)
S1707: step (Erase the first management unit)
Detailed Description
Generally, a memory storage device (also referred to as a memory storage system) includes a rewritable non-volatile memory module (rewritable non-volatile memory module) and a controller (also referred to as a control circuit). Typically, memory storage devices are used with a host system so that the host system can write data to or read data from the memory storage devices.
FIG. 1 is a diagram illustrating a host system, a memory storage device, and an input/output (I/O) device according to an exemplary embodiment of the invention. FIG. 2 is a diagram illustrating a host system, a memory storage device and an I/O device according to another example embodiment of the invention.
Referring to fig. 1 and 2, the
In the present exemplary embodiment, the
In the present exemplary embodiment, the
In an exemplary embodiment, the host system referred to is substantially any system that can cooperate with a memory storage device to store data. Although the host system is described as a computer system in the above exemplary embodiment, fig. 3 is a schematic diagram of a host system and a memory storage device according to another exemplary embodiment of the invention. Referring to fig. 3, in another exemplary embodiment, the
FIG. 4 is a schematic block diagram of a memory storage device according to an exemplary embodiment of the present invention.
Referring to fig. 4, the
The connection interface unit 402 is used to connect the
The memory
The rewritable nonvolatile memory module 406 is connected to the memory
Each memory cell in the rewritable nonvolatile memory module 406 stores one or more bits with a change in voltage (hereinafter also referred to as a threshold voltage). Specifically, each memory cell has a charge trapping layer between the control gate (control gate) and the channel. By applying a write voltage to the control gate, the amount of electrons in the charge trapping layer can be varied, thereby varying the threshold voltage of the memory cell. This operation of changing the threshold voltage of the memory cell is also referred to as "writing data to the memory cell" or "programming" the memory cell. As the threshold voltage changes, each memory cell in the rewritable nonvolatile memory module 406 has multiple memory states. The read voltage is applied to determine which memory state a memory cell belongs to, thereby obtaining one or more bits stored by the memory cell.
In the present exemplary embodiment, the memory cells of the rewritable nonvolatile memory module 406 may constitute a plurality of physical programming cells, and the physical programming cells may constitute a plurality of physical erasing cells. Specifically, memory cells on the same word line may constitute one or more physically programmed cells. If each memory cell can store more than 2 bits, the physical program cells on the same word line can be classified into at least a lower physical program cell and an upper physical program cell. For example, the Least Significant Bit (LSB) of a cell belongs to the lower physical program cell, and the Most Significant Bit (MSB) of a cell belongs to the upper physical program cell. Generally, in the MLC NAND flash memory, the writing speed of the lower physical program cell is faster than that of the upper physical program cell, and/or the reliability of the lower physical program cell is higher than that of the upper physical program cell.
In the present exemplary embodiment, the physical program cell is a programmed minimum cell. That is, the physical programming unit is the minimum unit for writing data. For example, the physical programming unit can be a physical page (page) or a physical fan (sector). If the physical programming units are physical pages, the physical programming units may include a data bit region and a redundancy (redundancy) bit region. The data bit region includes a plurality of physical sectors for storing user data, and the redundant bit region stores system data (e.g., management data such as error correction codes). In the present exemplary embodiment, the data bit area includes 32 physical fans, and the size of one physical fan is 512 bytes (B). However, in other example embodiments, the data bit region may also include 8, 16, or a greater or lesser number of physical fans, and the size of each physical fan may also be greater or lesser. On the other hand, the physically erased cell is the minimum unit of erase. That is, each physically erased cell contains one of the minimum number of memory cells that are erased. For example, the physical erase unit is a physical block (block).
FIG. 5 is a schematic block diagram of a memory control circuit unit according to an exemplary embodiment of the present invention.
Referring to fig. 5, the memory
The
In the exemplary embodiment, the control instructions of the
In another example embodiment, the control instructions of the
In another exemplary embodiment, the control instructions of the
The
The
In an exemplary embodiment, the
The error checking and correcting
The
In an example embodiment, the rewritable non-volatile memory module 406 of fig. 4 is also referred to as a flash (flash) memory module, the memory
FIG. 6 is a diagram illustrating a management of a rewritable nonvolatile memory module according to an exemplary embodiment of the present invention.
Referring to FIG. 6, the
A physical node may include one or more physical addresses. A physical address may consist of multiple memory locations. When data is to be stored, the
The
The
It should be noted that valid data is the latest data belonging to a logical unit, and invalid data is not the latest data belonging to any logical unit. For example, if the
In the exemplary embodiment, if the data belonging to a logical unit is updated, the mapping relationship between the logical unit and the entity node storing the old data belonging to the logical unit is removed, and the mapping relationship between the logical unit and the entity node storing the latest data belonging to the logical unit is established. However, in another exemplary embodiment, if the data belonging to a logical unit is updated, the mapping relationship between the logical unit and the physical node storing the old data belonging to the logical address can still be maintained.
When the
During the operation of the
In a data merge operation, the
After the completion operation is started, the completion operation may be stopped if the management units belonging to the
FIG. 7 is a diagram illustrating a host write operation and a data merge operation according to an exemplary embodiment of the invention. Referring to fig. 7, in a host write operation, the
Alternatively, the
FIG. 8 is a diagram illustrating a management of a rewritable nonvolatile memory module according to an exemplary embodiment of the present invention. Referring to FIG. 8, the rewritable nonvolatile memory module 406 includes management units 81(1) to 81 (n). Each of the management units 81(1) -81 (n) includes chip enable (also referred to as a chip enable group) CE (1) and CE (2). The chip enable CE (1) and CE (2) each include a plurality of physical nodes. The
FIG. 9 is a diagram illustrating a management unit according to an exemplary embodiment of the invention. Referring to FIG. 9, taking the
In an example embodiment, a plurality of consecutive entity nodes (e.g., entity nodes P1-P7) in a plane may be referred to as an entity unit. Alternatively, in an exemplary embodiment, a plurality of consecutive physical nodes (e.g., physical nodes P1-P14) in a chip enable may be referred to as a physical unit. Alternatively, in an example embodiment, a plurality of consecutive entity nodes (e.g., entity nodes P1-P28) in a plurality of planes may be referred to as one entity unit.
In an example embodiment, after the data consolidation operation is initiated, the
In an example embodiment, the
In other words, in an example embodiment, the
Fig. 10 is a diagram illustrating first management information according to an exemplary embodiment of the invention. Referring to fig. 10, in an exemplary embodiment, the first management information includes table information 1001. The table information 1001 may be stored in the
In an example embodiment, the
In an example embodiment, after selecting the first management unit as the source unit, the
Fig. 11 is a diagram illustrating a first management unit according to an exemplary embodiment of the invention. Fig. 12 is a diagram illustrating second management information according to an exemplary embodiment of the invention.
Referring to fig. 11 and 12, it is assumed that the management unit 81(1) is selected as the source unit (i.e., the first management unit) and that the management unit 81(1) includes a plurality of physical units PU (1) -PU (8). Each of the physical units PU (1) to PU (8) contains K consecutive physical nodes. For example, K may be 14, as shown in fig. 9. However, in another exemplary embodiment, the value of K may be larger or smaller, and the invention is not limited thereto. In addition, in another exemplary embodiment, the management unit 81(1) may further include more or less physical units, and the invention is not limited thereto.
In the present exemplary embodiment, it is assumed that physical units PU (1), PU (4), PU (5), and PU (8) are the first physical unit and physical units PU (2) and PU (7) are the second physical unit. The physical units PU (3) and PU (6) do not store valid data. The second management information may include table information 1201. The table information 1201 may be stored in the management unit 81 (1). For example, the table information 1201 may be stored in the last entity unit (e.g., entity unit PU (8)) in the management unit 81 (1). Table information 1201 may be used to identify physical units PU (1), PU (4), PU (5), and PU (8). For example, in table information 1201, the identification information corresponding to physical units PU (1), PU (4), PU (5), and PU (8) may be bit "1" to reflect that physical units PU (1), PU (4), PU (5), and PU (8) are the first physical unit. Conversely, in table information 1201, the identification information corresponding to physical units PU (2), PU (3), PU (6), and PU (7) may be bit "0" to reflect that physical units PU (2), PU (3), PU (6), and PU (7) are not the first physical unit. Thus, after selecting the management unit 81(1) as the source unit, according to the table information 1201, the entity units PU (1), PU (4), PU (5) and PU (8) can be identified as the first entity unit and collect the first valid data therefrom.
In an example embodiment, the
Fig. 13 is a diagram illustrating third management information according to an exemplary embodiment of the invention. Referring to fig. 11 and fig. 13, in the present exemplary embodiment, it is assumed that the third management information includes
According to the
Fig. 14 is a diagram illustrating a data merging operation according to an exemplary embodiment of the present invention. Referring to fig. 14, after the physical units PU (1), PU (4), PU (5), and PU (8) are identified as the first physical unit, the first valid data can be read from the physical units PU (1), PU (4), PU (5), and PU (8) and sequentially written into the recycling unit. It should be noted that, in the exemplary embodiment, it is assumed that the management unit 81(2) is a recycling unit, and the collected first valid data can be written into the physical units PU (9) -PU (12) in the management unit 81 (2).
In an example embodiment, the
In an example embodiment, the
Fig. 15 is a diagram illustrating a data merging operation according to an exemplary embodiment of the present invention. Referring to fig. 15, after the first valid data is stored in the management unit 81(2) and the
The
In the example embodiments of fig. 11-15, the collection of the first valid data (as shown in fig. 14) does not involve the reading and analysis of the logic-to-entity mapping table, and only a small portion of the collection of the second valid data (as shown in fig. 15) needs to go through the reading and analysis of the logic-to-entity mapping table. Therefore, compared to the conventional method in which the data stored in the entire management unit (or the physical block) is analyzed through the corresponding logical-to-physical mapping table, in the exemplary embodiment of the present invention, the valid data can be collected more quickly in the data merging operation, thereby improving the performance efficiency of the entire data merging operation and/or the system performance of the memory storage device.
It is noted that, in an example embodiment, in response to satisfaction of a particular condition (also referred to as a first condition), the
Taking fig. 11 as an example, the physical units PU (1), PU (4), PU (5) and PU (8) in the management unit 81(1) are all the first physical units, so the management unit 81(1) can satisfy the condition that the first management unit includes at least one first physical unit. In addition, the logical range to which the first valid data in the management unit 81(1) belongs corresponds to the logical ranges of the index information PTE (20), PTE (30), PTE (40), and PTE (50), and the logical range to which the second valid data in the management unit 81(1) belongs corresponds to the logical ranges of the index information PTE (1) and PTE (2), so the management unit 81(1) can also satisfy the condition that the logical ranges to which the first valid data and the second valid data belong do not overlap. In response to the management unit 81(1) satisfying at least one of the first conditions, the
In an example embodiment, in response to the first condition not being satisfied, the
It should be noted that, in the exemplary embodiments of fig. 10 to fig. 15, the
FIG. 16 is a flowchart illustrating a memory control method according to an exemplary embodiment of the invention. Referring to fig. 16, in step S1601, first management information is maintained in the rewritable nonvolatile memory module. The first management information is used for identifying a first management unit in the plurality of management units. In step S1602, in the data merge operation, on the premise that the first mapping information is not read from the rewritable non-volatile memory module, first valid data is collected from the first management unit according to the first management information. The first mapping information includes logic-to-entity mapping information related to the first valid data. In step S1603, the collected first valid data is stored to the recycle unit.
FIG. 17 is a flowchart illustrating a memory control method according to an exemplary embodiment of the invention. Referring to fig. 17, in step S1701, a data merge operation is started. In step S1702, a first management unit is selected as a recovery unit according to the first management information. In step S1703, second management information is fetched from the first management unit. The second management information is used for identifying at least one entity unit storing the first valid data in the first management unit. In step S1704, first valid data is collected from the at least one entity unit according to the second management information and stored in the recycling unit. In step S1705, second mapping information is read from the rewritable non-volatile memory module. In step S1706, second valid data is collected from the first management unit according to the second mapping information and stored to the recycle unit. In step S1707, the first management unit is erased.
However, the steps in fig. 16 and 17 have been described in detail above, and are not repeated herein. It is to be noted that, the steps in fig. 16 and fig. 17 can be implemented as a plurality of program codes or circuits, and the invention is not limited thereto. In addition, the methods shown in fig. 16 and fig. 17 can be used with the above exemplary embodiments, or can be used alone, and the invention is not limited thereto.
In summary, the memory management circuit can automatically maintain the first management information in the rewritable nonvolatile memory module, which is used to identify the first management unit from the plurality of management units. In the data merging operation, on the premise that the first mapping information is not read from the rewritable non-volatile memory module, the memory management circuit can automatically collect the first valid data from the first management unit according to the first management information and store the first valid data in the recovery unit. In addition, the memory management circuit can automatically update the first management information to meet the current use condition of the memory storage device by determining whether a certain management unit meets a first condition (for example, whether the first entity unit is included and/or whether the valid data in the first entity unit and the rest of the valid data use the same logic range). Therefore, the time for executing the data merging program can be effectively shortened and/or the execution efficiency of the data merging program can be improved, and the overall system efficiency of the memory storage device can be further improved.
Although the present invention has been described with reference to the above embodiments, it should be understood that various changes and modifications can be made therein by those skilled in the art without departing from the spirit and scope of the invention.
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