阅读说明：本技术 一种用于smd3225低频段谐振器的制造工艺 (Manufacturing process for SMD3225 low-frequency-band resonator ) 是由 王秋贞 于 2020-06-19 设计创作，主要内容包括：本发明公开了一种用于SMD3225低频段谐振器的制造工艺,包括以下步骤：前洗→排片→后洗→镀膜→点胶→固化→微调→封焊→老化→回流焊→检漏→测试印字编带→包装→入库,晶片的边缘采用倒边工艺。本发明因晶片的边缘采用倒边工艺,增大了镀膜电极的尺寸,减小了镀膜电极的厚度,以抑制由于晶片中间厚边缘薄带来的电极扩散、电气特性差的问题；定位片外形由原直角改为嵌入型圆角,以增加低频段倒边晶片长度与宽度方向的接触面,增加了低频段倒边晶片凸面与上下电极片的接触面,避免电极扩散；增加了微调离子溅射时的刻蚀面积,三点一线的对称性更集中；降低了平均阻抗,提高了起振率,降低了能耗。(The invention discloses a manufacturing process for an SMD3225 low-frequency band resonator, which comprises the following steps: front washing → arranging the chip → back washing → coating film → dispensing → curing → fine tuning → sealing and welding → aging → reflow welding → leakage detecting → testing and printing the tape → packaging → warehousing, the edge of the chip adopts the edge chamfering process. According to the invention, the edge of the wafer adopts the chamfering process, so that the size of the coated electrode is increased, the thickness of the coated electrode is reduced, and the problems of electrode diffusion and poor electrical characteristics caused by thick edge in the middle of the wafer are inhibited; the shape of the positioning sheet is changed from an original straight angle to an embedded round angle so as to increase the contact surface of the low-frequency chamfered wafer in the length and width directions and increase the contact surfaces of the convex surface of the low-frequency chamfered wafer and the upper and lower electrode plates, thereby avoiding the diffusion of electrodes; the etching area during fine tuning ion sputtering is increased, and the symmetry of three points and a line is more concentrated; the average impedance is reduced, the oscillation starting rate is improved, and the energy consumption is reduced.)

1. A manufacturing process for SMD3225 low band resonator, comprising the steps of:

front washing → piece arrangement → back washing → coating → dispensing → curing → fine tuning → sealing and welding → aging → reflow welding → leakage detection → test printing tape → packaging → warehousing;

the edge of the wafer adopts a chamfering process;

in the coating step: the film-coating electrode slice adopts a fillet rounding process, the radius of the fillet is 0.3mm, the length of the film-coating electrode slice is 1.30-1.45 mm, the width of the film-coating electrode slice is 1.30-1.38 mm, the thickness of the film-coating electrode slice is 0.10mm, the eccentric distance between the film-coating electrode slice and the wafer is 0.15mm, an embedded fillet is adopted in a groove position in the positioning piece, the length of the groove position is 2.10-2.30 mm, the width of the groove position is 1.50-1.70 mm, and the depth of the groove position is 0.15 mm;

in the fine tuning step: the length of the fine tuning electrode plate on the fine tuning plate is 1.2-1.3 mm, the width of the fine tuning electrode plate is 1.0-1.2 mm, the thickness of the fine tuning electrode plate is 0.2mm, and the eccentric distance between the fine tuning electrode plate and the wafer is 0.2 mm.

2. The manufacturing process for an SMD3225 low band resonator of claim 1, wherein: the impedance of the wafer is 70-85 omega.

3. The manufacturing process for an SMD3225 low band resonator of claim 1, wherein: the positioning sheet is subjected to sand blasting treatment through alumina sand.

4. The manufacturing process for an SMD3225 low band resonator of claim 1, wherein: in the pre-cleaning step, the wafer is cleaned with an ultrasonic cleaning agent.

5. The manufacturing process for an SMD3225 low band resonator of claim 1, wherein: in the curing step, the curing is carried out by heating through a curing furnace, and a temperature zone in the curing furnace is set as follows: 200-300 ℃ and the rotating speed is 25 mm/min.

Technical Field

The invention relates to the technical field of power electronics, in particular to a manufacturing process for an SMD3225 low-frequency band resonator.

Background

At present, the major electrode design of the SMD3225 resonator is mainly rectangular or square in the industry level, and the major electrode design is matched with a rectangular wafer with a thickness less than 0.10mm cut in a fundamental frequency vibration mode, and the major electrode design has a mature manufacturing process. However, for a wafer with a thickness greater than 0.10mm, the impedance of a resonator product is larger as the wafer is thicker, the roller chamfering is added in the manufacturing process of the wafer, the wafer is convex in shape thickness, the traditional electrode design is used for the wafer with the thickness of 0.10-0.15 mm, the method can be implemented only barely, but for the traditional electrode plate for the wafer with the thickness greater than 0.15mm, the electrode surface diffusion is serious in the manufacturing process, the impedance characteristic is poor, the characteristic defective rate of static capacitance and dynamic capacitance is high, and the serious product is directly short-circuited and does not start vibration or is not insulated well. Therefore, the existing low-frequency resonator product below the SMD3225/11.2896M designed according to the traditional electrode slice has the advantages of high cost, poor electrical characteristics, low production efficiency, narrow product application field and low market share. The electrode plate design of the SMD3225 low-frequency band resonator of the invention is just for solving the technical difficulty.

Disclosure of Invention

In order to overcome the defects, the invention provides a manufacturing process for the SMD3225 low-frequency band resonator.

The invention realizes the purpose through the following technical scheme:

a manufacturing process for an SMD3225 low band resonator, comprising the steps of:

front washing → piece arrangement → back washing → coating → dispensing → curing → fine tuning → sealing and welding → aging → reflow welding → leakage detection → test printing tape → packaging → warehousing;

the edge of the wafer is chamfered, so that the thickness of the peripheral edge of the wafer is reduced, the impedance can be effectively reduced, and the oscillation starting rate of the resonator is ensured;

in the coating step: the coating electrode slice adopts a rounding process, the radius of a fillet is 0.3mm, the length of the coating electrode slice is 1.30-1.45 mm, the width of the coating electrode slice is 1.30-1.38 mm, the thickness of the coating electrode slice is 0.10mm, the eccentric distance between the coating electrode slice and a wafer is 0.15mm, and the rounding size of a low-frequency resonator is large, so that the design changes the appearance of the coating electrode slice, the original rectangular design is changed into the rounded rectangular design, the rounded size is increased, and the matched coating electrode area is designed, so that the problems of electrode diffusion and poor electrical characteristics caused by the thin edge of the thick middle part of the wafer are inhibited;

the groove position in the positioning sheet adopts an embedded fillet, the length of the groove position is 2.10-2.30 mm, the width of the groove position is 1.50-1.70 mm, the depth of the groove position is 0.15mm, the appearance of the positioning sheet is changed from an original straight angle to an embedded fillet so as to increase the contact surface of the low-frequency chamfered wafer in length and width direction, increase the contact surface of the convex surface of the low-frequency chamfered wafer and the upper and lower electrode plates and avoid electrode diffusion;

in the fine tuning step: the length of the fine tuning electrode slice on the fine tuning plate is 1.2-1.3 mm, the width of the fine tuning electrode slice is 1.0-1.2 mm, the thickness of the fine tuning electrode slice is 0.2mm, the eccentric distance between the fine tuning electrode slice and the wafer is 0.2mm, the etching area during fine tuning ion sputtering is increased, and the symmetry of three points and a line is more concentrated.

Preferably, the impedance of the wafer is 70-85 Ω, the impedance average value of the wafer before improvement is about 140 Ω, the impedance average value of the wafer after improvement is about 79 Ω, the average impedance is reduced by 61 Ω, and the reduction ratio is 43.57%. The characteristic reject ratio of the static capacitor and the dynamic capacitor is reduced from 11 percent to 0. The original 4% of the vibration failure and the poor insulation is reduced to 0.

Preferably, the positioning sheet is subjected to sand blasting treatment by alumina sand.

Preferably, in the pre-washing step, the wafer is washed with an ultrasonic cleaning agent.

Preferably, in the step of curing, the curing is performed by heating in a curing oven, and a temperature zone in the curing oven is provided with: 200-300 ℃ and the rotating speed is 25 mm/min.

The invention has the beneficial effects that: the manufacturing process for the SMD3225 low band resonator has the following features:

1. because the edge of the wafer adopts the edge chamfering process, the size of the coated electrode is increased, and the thickness of the coated electrode is reduced, so that the problems of electrode diffusion and poor electrical characteristics caused by thick edge in the middle of the wafer are inhibited;

2. the shape of the positioning sheet is changed from an original straight angle to an embedded round angle so as to increase the contact surface of the low-frequency chamfered wafer in the length and width directions and increase the contact surfaces of the convex surface of the low-frequency chamfered wafer and the upper and lower electrode plates, thereby avoiding the diffusion of electrodes;

3. the etching area during fine tuning ion sputtering is increased, and the symmetry of three points and a line is more concentrated;

4. the average impedance is reduced, the oscillation starting rate is improved, and the energy consumption is reduced.

Detailed Description

The present invention will now be described in further detail.

A manufacturing process for SMD3225 low-band resonator, taking 3225/8.000M wafer as an example of a currently produced low-band resonator product, comprises the following steps:

front washing → piece arrangement → back washing → coating → dispensing → curing → fine tuning → sealing and welding → aging → reflow welding → leakage detection → test printing tape → packaging → warehousing;

the edge of the wafer is chamfered, and the impedance of the wafer is 70-85 omega;

in the coating step: the method comprises the following steps that a film-coating electrode slice adopts a fillet rounding process, the radius of a fillet is 0.3mm, the length of the film-coating electrode slice is 1.30-1.45 mm, the width of the film-coating electrode slice is 1.30-1.38 mm, the thickness of the film-coating electrode slice is 0.10mm, the eccentric distance between the film-coating electrode slice and a wafer is 0.15mm, an embedded fillet is adopted in a groove position in a positioning piece, the length of the groove position is 2.10-2.30 mm, the width of the groove position is 1.50-1.70 mm, the depth of the groove position is 0.15mm, and the positioning piece is subjected to sand blasting treatment by alumina sand;

in the fine tuning step: the length of a fine tuning electrode plate on the fine tuning plate is 1.2-1.3 mm, the width of the fine tuning electrode plate is 1.0-1.2 mm, the thickness of the fine tuning electrode plate is 0.2mm, and the eccentric distance between the fine tuning electrode plate and the wafer is 0.2 mm;

in the pre-cleaning step, the wafer is cleaned with an ultrasonic cleaning agent.

In the curing step, the curing is carried out by heating through a curing furnace, and a temperature zone in the curing furnace is set as follows: 200-300 ℃ and the rotating speed is 25 mm/min.