Semiconductor assembly using edge stacking and method of manufacturing the same
阅读说明:本技术 使用边缘堆叠的半导体组合件及其制造方法 (Semiconductor assembly using edge stacking and method of manufacturing the same ) 是由 T·H·金斯利 于 2018-12-03 设计创作,主要内容包括:本文中揭示使用边缘堆叠的半导体组合件及相关联的系统及方法。在一些实施例中,所述半导体组合件包括经堆叠的半导体封装,所述经堆叠的半导体封装包含:基底衬底,其具有基底表面;侧衬底,其具有正交于所述基底表面的侧表面;及裸片堆叠,其经安置于所述基底表面上方且具有拥有正交于所述侧表面的最外表面的最外裸片。所述侧衬底可经由从所述侧衬底的所述侧表面延伸到所述第一衬底的所述第一表面或所述最外裸片的所述第三表面的多个互连件而电耦合到所述裸片堆叠。所述半导体封装可进一步包括在所述侧衬底的外表面处的导电材料,借此允许所述半导体封装经由所述导电材料电耦合到相邻半导体封装。(Semiconductor assemblies using edge stacking and associated systems and methods are disclosed herein. In some embodiments, the semiconductor assembly comprises a stacked semiconductor package, the stacked semiconductor package including: a base substrate having a base surface; a side substrate having a side surface orthogonal to the base surface; and a die stack disposed over the base surface and having an outermost die having an outermost surface orthogonal to the side surface. The side substrate can be electrically coupled to the die stack via a plurality of interconnects extending from the side surface of the side substrate to the first surface of the first substrate or the third surface of the outermost die. The semiconductor package may further include a conductive material at an outer surface of the side substrate, thereby allowing the semiconductor package to be electrically coupled to an adjacent semiconductor package via the conductive material.)
1. A semiconductor package, comprising:
a first substrate having a first surface;
a second substrate having a second surface substantially orthogonal to the first surface;
one or more dies over the first surface, wherein an outermost die of the one or more dies includes a third surface that is substantially orthogonal to the second surface; and
a plurality of wire bonds extending from the second surface of the second substrate to at least one of (a) the first surface of the first substrate or (b) the third surface of the outermost die.
2. The semiconductor package of claim 1, wherein the second substrate includes a first side and a second side opposite the first side, wherein the second surface is at the first side, and wherein the second side includes external connection sites having exposed conductive material electrically coupled to an external package.
3. The semiconductor package of claim 2, wherein the conductive material corresponds to an array of contact points.
4. The semiconductor package of claim 1, wherein the first substrate includes a first side and a second side opposite the first side, wherein the first surface is at the first side, and wherein the second side includes external connection sites having exposed conductive material electrically coupled to an external package.
5. The semiconductor package of claim 1, wherein the first substrate is a base substrate and the second substrate is a side substrate attached to and extending vertically away from the base substrate.
6. The semiconductor package of claim 1, wherein the outermost die includes a plurality of first bond pads at the third surface and the second substrate includes a plurality of second bond pads at the second surface, and wherein the wire bonds extend from the first bond pads to the second bond pads.
7. The semiconductor package of claim 1, wherein the first substrate includes a plurality of first bond pads at the first surface and the second substrate includes a plurality of second bond pads at the second surface, and wherein the wire bonds extend from the first bond pads to the second bond pads.
8. The semiconductor package of claim 1, wherein the second substrate includes an outermost edge, the semiconductor package further comprising a mold material disposed over the first substrate and at least partially covering the one or more dies and the wire bonds, wherein the mold material includes a fourth surface that is substantially coplanar with the outermost edge of the second substrate.
9. The semiconductor package of claim 1, wherein the third surface of the outermost die is separated from the first surface of the first substrate by a first distance, and wherein the second substrate includes an outermost edge separated from the first surface of the first substrate by a second distance that is greater than or equal to the first distance.
10. The semiconductor package of claim 1, further comprising:
a third substrate having a third surface;
a fourth substrate having a fourth surface; and
a fifth substrate having a fifth surface,
wherein the third surface, the fourth surface, and the fifth surface are each substantially orthogonal to the first surface.
11. The semiconductor package of claim 10, wherein the second, third, fourth, and fifth substrates are attached to the first substrate via a uniform bonding material over the first surface.
12. A semiconductor package as recited in claim 10, wherein the third, fourth and fifth substrates are attached to one another via a bonding material extending vertically along each of the third, fourth and fifth substrates.
13. The semiconductor package of claim 10, wherein the second, third, fourth, and fifth substrates define an enclosure around the one or more dies.
14. The semiconductor package of claim 13, further comprising a mold material within the enclosure and at least partially covering the one or more dies, first surface, second surface, third surface, fourth surface, fifth surface, and wire bonds.
15. The semiconductor package of claim 10, wherein the wire bond is a first wire bond, the package further comprising:
a plurality of second wire bonds extending from the third surface to at least one of (a) the first surface of the first substrate or (b) the outermost surface of the outermost die;
a plurality of third wire bonds extending from the fourth surface to at least one of (a) the first surface of the first substrate or (b) the outermost surface of the outermost die;
a plurality of fourth wire bonds extending from the fifth surface to at least one of (a) the first surface of the first substrate or (b) the outermost surface of the outermost die.
16. The semiconductor package of claim 10, wherein the first, second, third, fourth, and fifth substrates each include a first side facing the one or more dies and a second side substantially opposite the first side and facing away from the one or more dies, wherein the second side of each of the first, second, third, fourth, and fifth substrates includes external connection sites having exposed conductive material.
17. A semiconductor assembly, comprising:
a plurality of semiconductor packages, wherein each semiconductor package is coupled to one or more adjacent semiconductor packages and includes:
a base substrate having a base surface;
a stack of dies over the substrate surface, wherein an outermost die of the stack of dies includes an outermost surface;
a side substrate over the base substrate, wherein the side substrate includes (a) a side surface orthogonal to the base surface of the base substrate and the outermost surface of the outermost die, and (b) an outer surface opposite the side surface and including a conductive material to be electrically coupled to one of the adjacent semiconductor packages;
a plurality of interconnects extending from the side surface of the side substrate to (a) the base surface of the base substrate or (b) the outermost surface of the outermost die, wherein the interconnects electrically couple the one or more dies to the side substrate; and
a mold material encapsulating the outermost die and the interconnects and covering at least a portion of the side surface.
18. The semiconductor assembly of claim 17, wherein the side substrate is a first side substrate, the assembly further comprising a second side substrate, a third side substrate, and a fourth side substrate, and wherein the first, second, third, and fourth side substrates are attached to the base substrate and form an enclosure therein.
19. The semiconductor assembly of claim 17, wherein the semiconductor assembly includes at least three semiconductor packages arranged in a 1 x 3 arrangement.
20. The semiconductor assembly of claim 17 wherein the adjacent semiconductor packages are directly coupled to each other using a friction fit and/or alignment pins.
21. The semiconductor assembly of claim 17, wherein a Dual Inline Memory Module (DIMM) comprises the semiconductor assembly.
22. The semiconductor assembly of claim 17, wherein the conductive material includes a contact pad or an array of contact pads.
23. A semiconductor package, comprising:
a substrate having a base surface;
a plurality of dies over the substrate and attached to the surface;
a mold material over the substrate and encapsulating the die, wherein the mold material includes a side surface substantially perpendicular to the base surface; and
a plurality of conductive fingers positioned at least partially between individual dies, wherein the conductive fingers extend away from the dies to corresponding side surfaces of the mold material, wherein the conductive fingers each include an end that is at least partially exposed through the mold material.
24. The semiconductor package of claim 23, wherein the individual dies are electrically coupled to each other via interconnects extending between the adjacent dies.
25. The semiconductor package of claim 23, wherein the individual dies are electrically coupled to one another via interconnects that (a) extend from adjacent conductive fingers and (b) extend at least partially through the mold material.
26. The semiconductor package of claim 23, wherein the conductive fingers contact and electrically couple adjacent dies to each other such that the adjacent dies are vertically separated from each other by individual conductive fingers.
27. The semiconductor package of claim 23, wherein the end of each of the conductive fingers is electrically coupled to an external package.
28. The semiconductor package of claim 23, wherein the semiconductor package does not include wire bonds.
29. A method of manufacturing a semiconductor package, the method comprising:
attaching a first substrate to a second substrate, wherein a first surface of the first substrate is substantially orthogonal to a second surface of the second substrate;
disposing a stack of dies over the first surface of the first substrate, wherein the stack of dies is electrically coupled to the first substrate; and
electrically coupling the die stack to the second substrate by forming interconnects that extend from the second surface of the second substrate to (a) the first surface of the first substrate or (b) a third surface of the die stack.
30. The method of claim 29, further comprising attaching third, fourth, and fifth substrates to the first substrate such that the second, third, fourth, and fifth substrates define an enclosure around the stack of dies.
31. The method of claim 29, further comprising at least partially encapsulating the first substrate, the second substrate, and the die stack with a mold material.
32. The method of claim 29, further comprising forming a ball grid array over a third surface of the second substrate, wherein the third surface is opposite the second surface of the second substrate and faces away from the die stack, and wherein the ball grid array is electrically coupled to an adjacent semiconductor package.
33. A method of forming a semiconductor assembly including a plurality of semiconductor packages, the method comprising:
electrically coupling a base substrate to a plurality of dies disposed over a base surface of the base substrate;
electrically coupling a side substrate to the die by providing interconnects extending from side surfaces of the side substrate to (a) the base surface of the base substrate or (b) a die surface of the die, wherein the base surface and the die surface are each orthogonal to the first surface; and
the side substrate is electrically coupled to an adjacent semiconductor package to form a semiconductor assembly.
34. The method of claim 33, wherein:
the side surface is at a first side of the side substrate,
the side substrate includes a second side opposite the first side, an
Electrically coupling the side substrate includes electrically coupling the side substrate to the adjacent semiconductor package via a conductive material at the second side of the side substrate.
35. The method of claim 33, wherein:
the side surface is at a first side of the side substrate,
the side substrate includes a second side opposite the first side and having a first array of solder connections, an
Electrically coupling the side substrate includes electrically coupling the first array of solder connections to a second array of solder connections on the adjacent semiconductor package.
36. The method of claim 35, wherein the first and second arrays of solder connections each comprise a ball grid array, and wherein the first array is arranged in a first pattern and the second array is arranged in a second pattern that is complementary to the first pattern.
37. The method of claim 35, wherein the first and second arrays of solder connections each include a bump and dimple arrangement, and wherein the first array is arranged in a first pattern and the second array is arranged in a second pattern that is complementary to the first pattern.
Technical Field
The present disclosure relates to packaging semiconductor devices, such as memories and processors, and several embodiments relate to semiconductor assemblies using modular edge stacking.
Background
Packaged semiconductor dies, including memory dies, microprocessor dies, and interface dies, typically include a semiconductor die mounted on a substrate and encapsulated in a plastic protective cover. The die includes functional means, such as memory cells, processor circuitry, and interconnect circuitry, and bond pads electrically connected to the functional means. The bond pads are typically electrically connected to external terminals that extend outside the protective covering to allow the die to be connected to a bus, circuit, or other higher-order circuitry.
Semiconductor die manufacturers are facing increasing pressure to continually reduce the size of die packages to fit the space constraints of electronic devices, while also increasing the functional capacity of each package to meet operating parameters. One approach for increasing the processing power of a semiconductor package without substantially increasing the surface area covered by the package (i.e., the "footprint" of the package) is to stack multiple semiconductor dies vertically on top of each other in a single package. However, stacking multiple dies increases the vertical profile of the device, requiring the individual dies to be substantially thinned to achieve a vertically compact size. Moreover, the stacking of multiple dies can increase the probability of device failure and result in higher costs associated with longer manufacturing and testing times.
Fig. 1 illustrates a conventional system 10 including a plurality of semiconductor stack assemblies. As shown, the system 10 includes Printed Circuit Boards (PCBs) 15 arranged in dual in-line memory module (DIMM) slots and separated from each other by a given centerline-to-centerline spacing (i.e., -7.6 mm). The semiconductor packages 12 are attached to each of the PCBs 15 in a stacked arrangement. In particular, the bottom portion of each semiconductor package 12 is attached to opposite sides of the PCB 15 via solder balls 13. The conventional system 10 has limited space (i.e., -1 mm) between the semiconductor packages 12 on adjacent DIMM slots, which can limit the airflow between the semiconductor packages 12 required for thermal control and limit the performance of the package. Accordingly, there is a need for other methods of providing semiconductor devices having a smaller footprint while still maintaining sufficient functional capacity to meet operating parameters.
Drawings
Fig. 1 is a schematic side view of a semiconductor device assembly according to the prior art.
Fig. 2A is a schematic top view of a semiconductor device package taken along line 2A-2A of fig. 2B and configured in accordance with an embodiment of the invention.
Figure 2B is a schematic cross-sectional view of the semiconductor device package shown in figure 2A taken along
Fig. 3A is a schematic top view of a semiconductor device package taken along
Figure 3B is a schematic cross-sectional view of the semiconductor device package shown in figure 3A taken along line 3B-3B of figure 3A and configured in accordance with an embodiment of the present invention.
Fig. 4A-4D are schematic diagrams illustrating a method of forming a semiconductor device package configured according to an embodiment of the invention.
Fig. 5 is a schematic cross-sectional view of a semiconductor device package configured in accordance with an embodiment of the invention.
Figures 6A-6C and 7A-7D are schematic diagrams of semiconductor device assemblies configured according to embodiments of the invention.
Figure 8 is a schematic diagram of a system including a semiconductor assembly configured in accordance with an embodiment of the invention.
Detailed Description
In the following description, numerous specific details are discussed to provide a thorough and enabling description of embodiments of the invention. One skilled in the relevant art will recognize, however, that the invention can be practiced without one or more of the specific details. In other instances, well-known structures or operations typically associated with semiconductor devices are not shown or described in detail to avoid obscuring other aspects of the invention. In general, it should be understood that various other devices, systems, and methods in addition to the specific embodiments disclosed herein may be within the scope of the invention.
As discussed above, semiconductor packages having smaller footprints while also maintaining sufficient processing power are continually being designed. Accordingly, several embodiments of semiconductor packages according to the present invention may be electrically coupled to one another using modular edge stacking techniques to form high density modules. In some embodiments, each semiconductor package includes a first substrate having a first surface, a second substrate having a second surface orthogonal to the first surface, and one or more dies disposed over the first surface of the first substrate. The semiconductor package further includes one or more interconnects extending from the second surface of the second substrate to at least one of (a) the first surface of the first substrate or (b) an outermost surface of the one or more dies. A semiconductor package may be electrically coupled to an adjacent semiconductor package via external connection sites at an outer surface (e.g., edge) of the first substrate and/or the second substrate.
Fig. 2A is a schematic top view of the semiconductor device package 100 ("
Each of the side substrates 102 a-d extends vertically away from the base surface 111 of the
Each of the side substrates 102 a-d can be electrically coupled directly to the
Individual semiconductor dies 105 a-h can include one or more through-substrate vias 122 (TSVs) extending at least partially through the dies 105 a-h, and conductive traces 118 a-b over outermost surfaces of the semiconductor dies 105 a-h. The individual semiconductor dies 105 a-h may be electrically coupled to neighboring dies via one or
The conductive materials 140 a-d may be formed from one or more of copper, nickel, solder (e.g., SnAg-based solder, solder balls), conductor-filled epoxy, and/or other conductive materials. As shown in fig. 2A and 2B, the conductive material 140 a-d may cover a majority of the surface area at the second sides 108 a-d of the side substrates 102A-d, and may be formed to have a similar or complementary arrangement to corresponding conductive material on other packages. In some embodiments, the side substrates 102 a-d and the respective conductive materials 140 a-d positioned thereon may be homogeneous (i.e., identical), which may help ensure that the
The
Fig. 3A is a schematic top view of a semiconductor device package 200 ("
Although fig. 2A-3B include four side substrates (e.g., 102A-d) disposed over
Fig. 4A-4D are schematic diagrams illustrating a method of forming a semiconductor device package ("
Referring next to fig. 4B, fabrication of the
Fig. 4C shows the
Fig. 4D shows the
Fig. 5 is a schematic cross-sectional view of a semiconductor device package 500 ("package 500") configured in accordance with an embodiment of the present technique. The package 500 includes features substantially similar to the features of the
Fig. 6A-6C are schematic diagrams of semiconductor device packages and assemblies. More particularly, fig. 6A corresponds to one individual semiconductor package 600 ("
As shown in fig. 6A, the
Fig. 6B illustrates a plurality of assemblies 620 of
Fig. 6C illustrates an
Fig. 7A-7C illustrate schematic diagrams of semiconductor device packages attached and electrically coupled to each other. As previously mentioned with reference to fig. 2A-6, an individual package (e.g., packages 100, 200, 500, and/or 600) may include conductive material (e.g., conductive material 140 a-d or conductive fingers 510, 515) at an outer surface of a substrate (e.g.,
Fig. 7B-7D include functionality similar to that described for fig. 7A, but utilize different mechanical coupling arrangements. For example, fig. 7B utilizes a
Fig. 7C utilizes yet another arrangement for creating a lap joint 720 between a first package and a second package. In this arrangement, the overhang portion 721b from the first package can form an electrical connection with the extended lip portion 721a from the second package. Each of the overhang portion 721b and the lip portion 721a may include a ball grid array or similar arrangement of conductive material to ensure robust electrical connection. In addition to bonding individual packages to one another, the lap joint 720 and overhang-lip arrangement can be used to bond packages to DIMM slots or
Any of the semiconductor devices described above with reference to fig. 2A-7C may be incorporated into any of a large number of larger and/or more complex systems, a representative example of which is the
It is not intended to be exhaustive or to limit the invention to the precise form disclosed herein. As one of ordinary skill in the relevant art will recognize, although specific embodiments are disclosed herein for purposes of illustration, various equivalent modifications are possible without departing from the invention. In some instances, well-known structures and functions have not been shown or described in detail to avoid unnecessarily obscuring the description of the embodiments of the invention. Although the steps of a method may be presented herein in a particular order, alternative embodiments may perform the steps in a different order. Similarly, particular aspects of the disclosure disclosed in the context of particular embodiments may be combined or eliminated in other embodiments. Moreover, while advantages associated with particular embodiments of the invention may be disclosed in the context of those embodiments, other embodiments may also exhibit such advantages, and not all embodiments need necessarily exhibit such advantages or other advantages disclosed herein to fall within the scope of the invention. Accordingly, the present disclosure and associated techniques may encompass other embodiments not explicitly shown or described herein, and the disclosure is not limited, except as by the appended claims.
Throughout this disclosure, the singular terms "a", "an" and "the" include plural references unless the context clearly dictates otherwise. Similarly, unless the word "or" is expressly limited to mean only a single item to the exclusion of other items in respect of a list of two or more items, the use of "or" in this list should be construed as including: (a) any single item in the list; (b) all items in the list; or (c) any combination of items in the list. Moreover, the terms "comprising," "including," and "having" are used throughout to mean including at least the recited means, such that any greater number of the same means and/or additional types of other means is not excluded. Reference herein to "one embodiment," "an embodiment," "some embodiments," or similar expressions means that a particular feature, structure, operation, or characteristic described in connection with the embodiment is included in at least one embodiment of the present invention. Thus, appearances of such phrases or formulations herein are not necessarily all referring to the same embodiment. Furthermore, the various particular components, structures, operations, or characteristics may be combined in any suitable manner in one or more embodiments.
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