阅读说明：本技术 研磨装置及研磨方法 (Polishing apparatus and polishing method ) 是由 侧瀬聡文 于 2019-07-26 设计创作，主要内容包括：本发明涉及一种研磨装置及研磨方法。实施方式提供一种有效地去除基板的表面的凸缺陷的研磨装置。实施方式的研磨装置具备：保持部,保持基板；供给部,对基板的表面供给研磨剂；以及研磨部,具有弹性体,使用弹性体对基板的表面进行研磨,且研磨中的弹性体与基板的表面的接触面积小于基板的表面积,研磨中的弹性体的速度向量的基板表面的法线方向分量的方向在弹性体与基板的表面接触的前后反转。(The present invention relates to a polishing apparatus and a polishing method. Embodiments provide a polishing apparatus that effectively removes a convex defect on a surface of a substrate. The polishing device of the embodiment comprises: a holding unit for holding the substrate; a supply unit configured to supply a polishing agent to a surface of a substrate; and a polishing unit having an elastic body, polishing the surface of the substrate by using the elastic body, wherein a contact area between the elastic body and the surface of the substrate during polishing is smaller than a surface area of the substrate, and a direction of a normal direction component of a velocity vector of the elastic body during polishing is reversed before and after the elastic body is in contact with the surface of the substrate.)

1. A polishing apparatus includes:

a holding unit for holding the substrate;

a supply unit configured to supply a polishing agent to a surface of the substrate; and

and a polishing unit having an elastic body, wherein the surface of the substrate is polished by using the elastic body, a contact area between the elastic body and the surface of the substrate during polishing is smaller than a surface area of the substrate, and a direction of a normal direction component of a velocity vector of the elastic body during polishing is reversed before and after the elastic body is in contact with the surface of the substrate.

2. The polishing apparatus according to claim 1, wherein the elastic body is circular or elliptical in a cross section perpendicular to a surface of the substrate, and the polishing apparatus is further provided with a 1 st rotating mechanism that rotates the elastic body in a circumferential direction of the elastic body.

3. The polishing apparatus according to claim 1 or 2, further comprising: and a 2 nd rotation mechanism configured to rotate the substrate about a center of the substrate as a rotation center by rotating the holding portion.

4. The polishing apparatus according to claim 1 or 2, further comprising: and a moving mechanism that moves the polishing unit relative to the substrate in a direction parallel to a surface of the substrate.

5. The polishing device according to claim 1 or 2, wherein the storage modulus of the elastomer is 0.01GPa or more and 10GPa or less.

6. The abrading device of claim 1 or 2, wherein the elastomer comprises a resin or a nonwoven.

7. The polishing apparatus according to claim 1 or 2, wherein the polishing agent comprises abrasive grains.

8. The polishing apparatus according to claim 1 or 2, having a plurality of the polishing portions.

9. A polishing method comprising supplying a polishing agent to the surface of a substrate

The method includes the steps of bringing an elastic body into contact with the surface of the substrate so that the contact area is smaller than the surface area of the substrate, and polishing the surface of the substrate by moving the elastic body so that the direction of the normal direction component of the velocity vector of the elastic body to the surface of the substrate is reversed before and after the elastic body comes into contact with the surface of the substrate.

10. The polishing method according to claim 9, wherein a surface of the elastic body is a circle or an ellipse in a cross section perpendicular to a surface of the substrate, and the elastic body is rotated in a circumferential direction of the elastic body.

11. The polishing method according to claim 9 or 10, wherein the substrate is rotated with a center of the substrate as a rotation center.

12. The polishing method according to claim 10, wherein a width of the circumferential direction of a portion of the elastic body which is in contact with the substrate is equal to or less than a minimum dimension of a pattern formed on the substrate.

13. The polishing method according to claim 9 or 10, wherein a distance that any point of the elastic body moves on the surface of the substrate during contact with the substrate is below a minimum size of a pattern formed on the substrate.

14. The abrading method according to claim 9 or 10, wherein the elastomer comprises a resin or a nonwoven fabric.

15. The polishing method according to claim 9 or 10, wherein the polishing agent comprises abrasive grains.

Technical Field

Embodiments of the present invention relate to a polishing apparatus and a polishing method.

Background

For example, a semiconductor device such as a memory device or a logic device is manufactured by forming a desired circuit pattern over a substrate by repeating deposition of a film and etching of the film over the substrate. For example, in deposition of a film and etching of the film, a convex defect protruding from the surface of the substrate may be formed on the surface of the substrate.

If a convex defect is generated on the surface of the substrate, for example, in a photolithography step for forming a circuit pattern, there arises a problem that a desired circuit pattern cannot be formed due to defocusing. In particular, as semiconductor devices are increasingly miniaturized and the minimum size of circuit patterns is also reduced, the problem becomes serious.

For example, when the film is further deposited over the convex defect, a convex defect of an enlarged size may be formed over the buried convex defect. As the number of laminated films increases, the size of the convex defect expands. Therefore, a region where a desired circuit pattern cannot be formed due to defocusing also expands, and the problem becomes more serious.

For example, if a memory cell of a memory device has a three-dimensional structure, the number of layers of a film formed over a substrate is dramatically increased. Therefore, the influence of the convex defect on the formation of the circuit pattern becomes large, and the yield of the semiconductor device is lowered. Therefore, a process of effectively removing the convex defect of the surface of the substrate is required.

Disclosure of Invention

The invention provides a polishing apparatus and a polishing method for effectively removing convex defects on a surface of a substrate.

Drawings

Fig. 1(a) and (b) are schematic views of a polishing apparatus according to embodiment 1.

Fig. 2 is an explanatory view of a polishing section of the polishing apparatus according to embodiment 1.

Fig. 3(a) to (c) are explanatory views of the operation and effect of the polishing apparatus and the polishing method according to embodiment 1.

Fig. 4 is a diagram illustrating the operation and effect of the polishing method according to embodiment 1.

Fig. 5 is a diagram illustrating the operation and effect of the polishing method according to embodiment 1.

Fig. 6(a) and (b) are schematic views of the polishing apparatus according to embodiment 2.

Fig. 7(a) and (b) are schematic views of the polishing apparatus according to embodiment 3.

Fig. 8(a) and (b) are schematic views of the polishing apparatus according to embodiment 4.

The polishing device of the embodiment comprises: a holding unit for holding the substrate; a supply unit configured to supply a polishing agent to a surface of the substrate; and a polishing unit having an elastic body, polishing the surface of the substrate by using the elastic body, wherein a contact area between the elastic body and the surface of the substrate during polishing is smaller than a surface area of the substrate, and a direction of a normal direction component of a velocity vector of the elastic body during polishing is reversed before and after the elastic body is in contact with the surface of the substrate.