阅读说明：本技术 振动器件 (Vibration device ) 是由 水口彰 于 2021-03-15 设计创作，主要内容包括：本发明提供振动器件,能够抑制振荡特性的下降。振动器件具有：半导体基板,其具有第1面和位于所述第1面的相反侧的第2面；振动片,其配置在所述第1面；电路元件,其配置在所述第1面,包含振荡电路；布线,其配置在所述第1面,将所述振动片和所述振荡电路电连接；处理电路,其配置在所述第2面,处理所述振荡电路的输出信号；以及贯通电极,其贯通所述半导体基板,将所述振荡电路和所述处理电路电连接。(The invention provides a vibration device capable of suppressing the decrease of oscillation characteristics. The vibration device has: a semiconductor substrate having a 1 st surface and a 2 nd surface located on an opposite side of the 1 st surface; a vibrating reed disposed on the 1 st surface; a circuit element disposed on the 1 st surface and including an oscillation circuit; a wiring disposed on the 1 st surface and electrically connecting the resonator element and the oscillation circuit; a processing circuit disposed on the 2 nd surface, for processing an output signal of the oscillation circuit; and a through electrode penetrating the semiconductor substrate and electrically connecting the oscillation circuit and the processing circuit.)

1. A vibration device, characterized in that it has:

a semiconductor substrate having a 1 st surface and a 2 nd surface located on an opposite side of the 1 st surface;

a vibrating reed disposed on the 1 st surface;

a circuit element disposed on the 1 st surface and including an oscillation circuit;

a wiring disposed on the 1 st surface and electrically connecting the resonator element and the oscillation circuit;

a processing circuit disposed on the 2 nd surface, for processing an output signal of the oscillation circuit; and

and a through electrode penetrating the semiconductor substrate to electrically connect the oscillation circuit and the processing circuit.

2. The vibration device of claim 1,

the processing circuit includes a PLL circuit.

3. The vibration device according to claim 1 or 2,

the circuit element includes a temperature detection element that detects a temperature of the vibrating piece.

4. The vibration device according to claim 1 or 2,

the vibrating reed and the circuit element are arranged on the 1 st surface.

5. The vibration device of claim 4,

the vibrating reed is electrically connected to the wiring at an end portion located on the circuit element side.

6. A vibration device, characterized in that it has:

a 1 st semiconductor substrate having a 1 st surface and a 2 nd surface located on an opposite side of the 1 st surface;

a circuit element including a 2 nd semiconductor substrate and an oscillation circuit, the 2 nd semiconductor substrate being disposed on the 1 st surface and having a 3 rd surface located on an opposite side of the 1 st surface, the oscillation circuit being disposed on the 3 rd surface;

a vibrating reed disposed on the 3 rd surface of the circuit element;

a wiring disposed on the 3 rd surface and electrically connecting the resonator element and the oscillation circuit;

a processing circuit disposed on the 2 nd surface, for processing an output signal of the oscillation circuit; and

and a 1 st through electrode penetrating the 1 st semiconductor substrate and electrically connecting the oscillation circuit and the processing circuit.

7. The vibration device of claim 6,

the circuit element has a 2 nd through-electrode, and the 2 nd through-electrode penetrates the 2 nd semiconductor substrate and electrically connects the oscillation circuit and the 1 st through-electrode.

Technical Field

The present invention relates to a vibration device.

Background

The piezoelectric oscillator described in patent document 1 includes: an integrated circuit substrate having an oscillation circuit formed on one surface side of a flat plate made of an electrically insulating material and a cavity formed on the other surface side; a vibrating plate fixed to a bottom surface of the chamber; a through electrode which penetrates the flat plate and electrically connects the oscillation circuit and the vibrating piece; and a cover which is jointed with the upper surface of the flat plate in a manner of covering the opening of the cavity. In this way, the piezoelectric oscillator can be miniaturized by mounting the vibrating reed on the integrated circuit board.

Patent document 1: japanese laid-open patent publication No. 2004-214787

Disclosure of Invention

Problems to be solved by the invention

However, in the piezoelectric oscillator of patent document 1, the oscillation circuit and the vibrating reed are electrically connected through the through electrode. In this way, in the structure in which the oscillation circuit and the vibrating reed are electrically connected through the through electrode, there is a problem that parasitic capacitance included in the through electrode increases and oscillation characteristics deteriorate.

Means for solving the problems

The vibration device of the present application example has: a semiconductor substrate having a 1 st surface and a 2 nd surface located on an opposite side of the 1 st surface; a vibrating reed disposed on the 1 st surface; a circuit element disposed on the 1 st surface and including an oscillation circuit; a wiring disposed on the 1 st surface and electrically connecting the resonator element and the oscillation circuit; a processing circuit disposed on the 2 nd surface, for processing an output signal of the oscillation circuit; and a through electrode penetrating the semiconductor substrate and electrically connecting the oscillation circuit and the processing circuit.

The vibration device of the present application example has: a 1 st semiconductor substrate having a 1 st surface and a 2 nd surface located on an opposite side of the 1 st surface; a circuit element including a 2 nd semiconductor substrate and an oscillation circuit, the 2 nd semiconductor substrate being disposed on the 1 st surface and having a 3 rd surface located on an opposite side of the 1 st surface, the oscillation circuit being disposed on the 3 rd surface; a vibrating reed disposed on the 3 rd surface of the circuit element; a wiring disposed on the 3 rd surface and electrically connecting the resonator element and the oscillation circuit; a processing circuit disposed on the 2 nd surface, for processing an output signal of the oscillation circuit; and a 1 st through electrode penetrating the 1 st semiconductor substrate and electrically connecting the oscillation circuit and the processing circuit.

Drawings

Fig. 1 is a sectional view showing a vibration device of embodiment 1.

Fig. 2 is a plan view showing a vibrating piece and a circuit element included in the vibrator device of fig. 1.

Fig. 3 is a block diagram illustrating a circuit structure of the vibration device of fig. 1.

Fig. 4 is a sectional view showing the vibration device of embodiment 2.

Fig. 5 is a plan view showing a vibrating piece and a circuit element included in the vibrator device of fig. 4.

Description of the reference symbols

1: a vibrating device; 2: packaging; 3: a cover; 4: a semiconductor circuit substrate; 5: a semiconductor substrate; 6: a circuit; 8: a circuit element; 8 a: an upper surface; 8 b: a lower surface; 9: a vibrating piece; 30: a lower surface; 31: a recess; 50: an insulating film; 51: an upper surface; 52: a lower surface; 53: a through hole; 60: a laminate; 61: an insulating layer; 62: a wiring layer; 63: an insulating layer; 64: a passivation film; 65: a terminal layer; 66: a processing circuit; 67: a fractional N-PLL circuit; 68: an output circuit; 71. 72, 73: wiring; 75: a bonding layer; 81: a temperature sensor; 82: an oscillation circuit; 91: vibrating the substrate; 530: a through electrode; 651: a terminal; 671: a phase comparator; 672: a low-pass filter; 673: a voltage controlled oscillator; 674: a frequency divider; 675: a charge pump circuit; 801: a semiconductor substrate; an 802 circuit section; 803: a terminal; 805: a through electrode; 821: an oscillation circuit unit; 822: a temperature compensation circuit section; 921. 922: an excitation electrode; 923. 924: a terminal; 925. 926: wiring; b1, B2, B3: an engaging member; s: a storage space.

Detailed Description

Hereinafter, the vibration device, the electronic apparatus, and the moving object according to the present application example will be described in detail with reference to the embodiments shown in the drawings.

< embodiment 1 >

Fig. 1 is a sectional view showing a vibration device of embodiment 1. Fig. 2 is a plan view showing a vibrating piece and a circuit element included in the vibrator device of fig. 1. Fig. 3 is a block diagram illustrating a circuit structure of the vibration device of fig. 1. In addition, fig. 1 is a sectional view taken along line a-a of fig. 2. For convenience of explanation, 3 axes orthogonal to each other are shown as an X axis, a Y axis, and a Z axis in fig. 1 and 2. The tip side of the arrow in the Z axis is also referred to as "up", and the base side is also referred to as "down". The arrow tip side of each shaft is also referred to as "positive side", and the base side is also referred to as "negative side". In addition, a plan view along the Z axis, which is the thickness direction of the semiconductor substrate 5, is simply referred to as a "plan view".

The vibration device 1 shown in fig. 1 is used as an oscillator, for example. However, the vibration device 1 may be used as a device other than the oscillator, for example, various sensors such as an acceleration sensor and an angular velocity sensor. The vibration device 1 of the present embodiment is a temperature compensated crystal oscillator (TCXO), and as shown in fig. 1, the vibration device 1 includes: a package 2 having a housing space S therein; and a vibrating reed 9 and a circuit element 8 which are housed in the housing space S. The package 2 includes a semiconductor circuit board 4 and a lid 3 joined to an upper surface of the semiconductor circuit board 4.

[ semiconductor Circuit Board 4]

As shown in fig. 1, the semiconductor circuit board 4 has a semiconductor substrate 5 and a circuit 6 provided on the semiconductor substrate 5. In addition, the semiconductor substrate 5 is a silicon substrate. In particular, in the present embodiment, the semiconductor substrate 5 is a P-type silicon substrate having P-type conductivity, and the substrate potential is ground. However, the semiconductor substrate 5 may be a semiconductor substrate other than a silicon substrate, for example, various semiconductor substrates made of germanium, gallium arsenide phosphide, gallium nitride, silicon carbide, or the like. The semiconductor substrate 5 may be an N-type silicon substrate having N-type conductivity.

The semiconductor substrate 5 has a plate shape having an upper surface 51 as a 1 st surface and a lower surface 52 as a 2 nd surface located on the opposite side of the upper surface 51. In addition, the semiconductor substrate 5 has an insulating film 50 formed on the surface thereof. The insulating film 50 is made of silicon oxide (SiO)₂) The structure is formed by, for example, thermally oxidizing the surface of the semiconductor substrate 5. Further, on the lower surface 52 of the semiconductor substrate 5, a circuit 6 electrically connected to the vibrating reed 9 is provided. By providing the circuit 6 on the semiconductor substrate 5, the space of the semiconductor substrate 5 can be effectively used.

In the following description, the phrase "disposed on upper surface 51" means a concept that is disposed on the side of upper surface 51 and includes a case where it is disposed at a position separated from upper surface 51 in addition to a case where it is disposed directly on upper surface 51. The same is true of lower surface 52.

A laminate 60 in which an insulating layer 61, a wiring layer 62, an insulating layer 63, a passivation film 64, and a terminal layer 65 are laminated is provided on the lower surface 52 of the semiconductor substrate 5. A plurality of active elements, not shown, which are semiconductor elements formed on the lower surface 52 are electrically connected to constitute the circuit 6 via the wiring included in the wiring layer 62. That is, the circuit 6 is formed integrally with the semiconductor substrate 5. The terminal layer 65 is provided with a plurality of terminals 651, and the plurality of terminals 651 include, for example, a terminal connected to a power supply, a terminal connected to ground, and a terminal from which a signal is output from the circuit 6. The insulating layers 61, 63 are made of silicon oxide (SiO)₂) The wiring layer 62 and the terminal layer 65 are made of a conductive material such as aluminum (Al), copper (Cu), conductive polysilicon, or tungsten (W), and the passivation film 64 is made of a resin material such as polyamide. However, the constituent material of these parts is not particularly limited.

In the illustrated configuration, the stacked body 60 includes 1 wiring layer 62, but the present invention is not limited thereto, and a plurality of wiring layers 62 may be stacked with an insulating layer 63 interposed therebetween. That is, between the insulating layer 61 and the passivation film 64, the wiring layer 62 and the insulating layer 63 may be alternately stacked a plurality of times.

As shown in fig. 1, a plurality of through holes 53 penetrating the semiconductor substrate 5 in the thickness direction are formed in the semiconductor substrate 5. These through holes 53 are filled with a conductive material to form through electrodes 530. As shown in fig. 1 and 2, the semiconductor substrate 5 has an upper surface 51 provided with: a pair of wirings 71, 72 electrically connecting the vibrating reed 9 and the circuit element 8; and a plurality of wirings 73 electrically connecting the circuit element 8 and the through-electrodes 530. Thereby, the vibrating reed 9, the circuit element 8, and the circuit 6 are electrically connected to each other through the wirings 71, 72, 73 and the through electrode 530.

As shown in fig. 1 and 2, a bonding layer 75 for bonding to the lid 3 is provided on the upper surface 51 of the semiconductor substrate 5. In addition, the bonding layer 75 is provided along the outer edge of the semiconductor substrate 5. In addition, the insulating film 50 is removed from the upper surface 51 at a portion overlapping with the bonding layer 75. However, the insulating film 50 may not be removed from the upper surface 51. That is, the bonding layer 75 may be provided on the insulating film 50.

[ vibrating piece 9]

As shown in fig. 2, the vibrating reed 9 includes a vibrating substrate 91 and an electrode disposed on a surface of the vibrating substrate 91. The vibration substrate 91 has a thickness shear vibration mode, and is formed of an AT-cut quartz substrate in the present embodiment. The AT-cut quartz substrate has a third-order frequency-temperature characteristic, and thus, the vibrating piece 9 having an excellent temperature characteristic is obtained. In addition, the electrode includes: an excitation electrode 921 disposed on the upper surface of the vibration substrate 91; an excitation electrode 92 disposed on the lower surface so as to face the excitation electrode 921; a pair of terminals 923, 924 disposed on the lower surface of the vibration substrate 91; a wiring 925 which electrically connects the terminal 923 to the excitation electrode 921; and a wiring 926 electrically connecting the terminal 924 and the excitation electrode 922.

In addition, the structure of the vibrating piece 9 is not limited to the above structure. For example, the vibrating reed 9 may be a mesa type in which the vibration region sandwiched by the excitation electrodes 921 and 922 protrudes from the periphery thereof, or conversely, may be a reverse mesa type in which the vibration region is recessed from the periphery thereof. Further, a bevel process of grinding the periphery of the vibration substrate 91 or a convex process of forming the upper surface and the lower surface into convex curved surfaces may be performed.

The vibrating reed 9 is not limited to vibrating in the thickness shear vibration mode, and may be a vibrating reed in which a plurality of vibrating arms perform flexural vibration in the in-plane direction, for example. That is, the vibration substrate 91 is not limited to the AT-cut quartz substrate, and may be formed of a quartz substrate other than the AT-cut quartz substrate, for example, an X-cut quartz substrate, a Y-cut quartz substrate, a Z-cut quartz substrate, a BT-cut quartz substrate, an SC-cut quartz substrate, an ST-cut quartz substrate, or the like. In the present embodiment, the vibration substrate 91 is made of quartz, but is not limited to this, and may be made of a piezoelectric single crystal such as lithium niobate, lithium tantalate, lithium tetraborate, langasite, potassium niobate, gallium phosphate, or the like, or a piezoelectric single crystal other than these. The vibrating reed 9 is not limited to the piezoelectric driving type, and may be an electrostatic driving type using an electrostatic force.

The vibrating reed 9 is fixed to the pair of wirings 71 and 72 by conductive bonding members B1 and B2. The bonding member B1 electrically connects the wiring 71 and the terminal 923, and the bonding member B2 electrically connects the wiring 72 and the terminal 924. Thereby, the vibrating reed 9 is electrically connected to the circuit element 8.

The bonding members B1 and B2 are not particularly limited as long as they have both conductivity and bondability, and for example, various metal bumps such as gold bumps, silver bumps, copper bumps, and solder bumps, or a conductive adhesive obtained by dispersing a conductive filler such as a silver filler in various adhesives such as polyimide, epoxy, silicone, and acrylic adhesives can be used. If the former metal bumps are used as the bonding members B1 and B2, the generation of gas from the bonding members B1 and B2 can be suppressed, and the change in the environment of the housing space S, particularly the increase in the pressure, can be effectively suppressed. On the other hand, when the latter conductive adhesive is used as the bonding members B1, B2, the bonding members B1, B2 are softer than the metal bumps, and stress is less likely to be transmitted from the package 2 to the vibrating piece 9.

[ Circuit element 8]

As shown in fig. 1 and 2, the circuit element 8 is formed separately from the semiconductor circuit board 4 and is disposed on the upper surface 51 of the semiconductor substrate 5. The circuit element 8 includes a semiconductor substrate 801 and a circuit portion 802 formed on the lower surface side of the semiconductor substrate 801. The circuit portion 802 has a configuration similar to that of the circuit portion 6 described above, and a plurality of active elements, not shown, are formed on the lower surface of the semiconductor substrate 801 and electrically connected to each other via a wiring, not shown, laminated on the lower surface. A plurality of terminals 803 for electrically connecting the circuit portion 802 to the outside are provided on the lower surface of the circuit portion 802.

The circuit element 8 is fixed to the upper surface 51 of the semiconductor substrate 5 via a plurality of conductive bonding members B3. Further, by the bonding member B3, any terminal 803 is electrically connected to the wiring 71, any terminal 803 is electrically connected to the wiring 72, and any terminal 803 is electrically connected to the wiring 73. Thereby, the vibrating reed 9, the circuit element 8, and the circuit 6 are electrically connected to each other. The joining member B3 is not particularly limited as long as it has both conductivity and joining property, and for example, the same joining members B1 and B2 as described above can be used.

The circuit portion 802 of the circuit element 8 is provided with a temperature sensor 81 as a temperature detection element and an oscillation circuit 82. The oscillation circuit 82 has the function of: the vibrating reed 9 is oscillated, and a temperature-compensated oscillation signal is generated based on the temperature detected by the temperature sensor 81. That is, the oscillation circuit 82 includes: an oscillation circuit part 821 which is electrically connected to the vibrating reed 9, amplifies an output signal of the vibrating reed 9, and feeds back the amplified signal to the vibrating reed 9 to oscillate the vibrating reed 9; and a temperature compensation circuit unit 822 for performing temperature compensation so that the frequency variation of the output signal becomes smaller than the frequency-temperature characteristic of the vibrating reed 9 itself, based on the temperature information output from the temperature sensor 81. By providing the temperature compensation circuit unit 822 in this way, the temperature characteristics of the oscillator circuit 82 are improved.

However, the temperature sensor 81 and the temperature compensation circuit unit 822 may be omitted. That is, the vibration device 1 may not be a temperature compensation type quartz oscillator. In addition to the temperature compensation circuit unit 822, for example, a bandgap reference circuit, a power supply regulator circuit, or the like may be added to the circuit element 8. This reduces the number of active elements required on the circuit 6 side, thereby reducing the manufacturing cost.

As the oscillation circuit 82, for example, an oscillation circuit such as a pierce type oscillation circuit, an Inverter type oscillation circuit, a colpitts oscillation circuit, or a hartley oscillation circuit can be used. The temperature compensation circuit unit 822 included in the oscillator circuit 82 can adjust the oscillation frequency of the oscillator circuit unit 821 by adjusting the capacitance of a variable capacitance circuit connected to the oscillator circuit unit 821, for example, and the frequency of the output signal of the oscillator circuit unit 821 can be adjusted by a PLL circuit or a direct digital synthesis circuit.

As described above, the circuit element 8 including the oscillation circuit 82 is disposed on the upper surface 51 together with the vibrating reed 9, and is electrically connected to the vibrating reed 9 via the wirings 71 and 72 disposed on the upper surface 51 of the semiconductor substrate 5. Therefore, as compared with the conventional case where the circuit element 8 and the vibrating reed 9 are electrically connected via the through electrode, the thickness and length of the wirings 71 and 72 can be sufficiently suppressed, and the parasitic capacitance from the wirings 71 and 72 can be sufficiently suppressed. Therefore, the CI (crystal impedance) value of the oscillation circuit 82 can be suppressed sufficiently small, and a high oscillation margin can be obtained. Therefore, deterioration of the oscillation characteristics of the vibration device 1 can be effectively suppressed.

In particular, the circuit element 8 is arranged on the upper surface 51 of the semiconductor substrate 5 in parallel with the vibrating reed 9. In the present embodiment, the circuit element 8 and the vibrating reed 9 are arranged along the X axis. The circuit element 8 is arranged so as not to overlap the vibrating reed 9 in a plan view. By disposing the circuit element 8 in this manner, the thickness of the vibration device 1 can be reduced. However, for example, a part of the circuit element 8 may overlap with the vibrating reed 9.

The vibrating reed 9 is fixed to the semiconductor substrate 5 via bonding members B1 and B2 at an end portion on the X-axis positive side, which is an end portion on the circuit element 8 side, and is electrically connected to the wirings 71 and 72. That is, the circuit element 8 is disposed on the fixed end side of the vibrating reed 9 with respect to the vibrating reed 9, that is, on the end side fixed to the semiconductor substrate 5 via the bonding members B1 and B2. Thus, the wiring length of the wirings 71 and 72 electrically connecting the circuit element 8 and the vibrating reed 9 can be shortened as compared with other arrangements, for example, in the case where the circuit element 8 is arranged on the free end side of the vibrating reed 9. Therefore, the parasitic capacitance from the wirings 71 and 72 can be suppressed to be smaller. Therefore, the CI value of the oscillation circuit 82 can be suppressed to be smaller, and a higher oscillation margin can be obtained. Therefore, deterioration of the oscillation characteristics of the vibration device 1 can be more effectively suppressed. However, for example, the vibrating reed 9 may be fixed to the semiconductor substrate 5 via the bonding members B1 and B2 at an end portion on the opposite side to the circuit element 8, that is, an end portion on the negative side in the X axis direction, and may be electrically connected to the wirings 71 and 72.

[ Circuit 6]

Returning to the description of the semiconductor circuit board 4, as shown in fig. 3, the circuit 6 includes a processing circuit 66 that processes an output signal of the oscillation circuit 82. Further, the processing circuit 66 includes a fractional N-pll (phase Locked loop) circuit 67 as a phase synchronization circuit and an output circuit 68.

The fractional-N-PLL circuit 67, which is a fractional-division PLL circuit, is a PLL circuit capable of setting a fractional division ratio by switching an integer division ratio and setting the fractional (fractional) division ratio on average. Thus, a signal of an arbitrary frequency can be generated and output based on the output signal of the oscillation circuit 82. Then, the signal output from the fractional N-PLL circuit 67 is output from a predetermined terminal 651 through an output circuit 68.

In particular, the fractional N-PLL circuit 67 can exhibit the following effects. In a general oscillator, after a resonator element is housed in a package, a frequency of the resonator element is adjusted by removing a part of an electrode of the resonator element by laser irradiation. However, in the resonator device 1, the lid 3 is made of silicon, and it is difficult to irradiate the resonator element 9 with laser light after the resonator element 9 is housed in the package 2, and it may be difficult to adjust the frequency of the resonator element 9. Even in this case, as long as there is the fractional N-PLL circuit 67, a signal of an arbitrary frequency can be output from the circuit.

The frequency-divided N-PLL circuit 67 includes a phase comparator 671 to which the reference frequency signal output from the oscillation circuit 82 is input, a charge pump circuit 675, a low-pass filter 672, a voltage-controlled oscillator 673 to which the dc signal from the low-pass filter 672 is input, and a frequency divider 674 to which the frequency signal output from the voltage-controlled oscillator 673 is input, and the frequency signal divided by the frequency divider 674 is input to the phase comparator 671. The phase comparator 671 detects a phase difference between the reference frequency signal and the frequency-divided frequency signal, and outputs the detection result as a pulse voltage to the charge pump circuit 675. The charge pump circuit 675 converts the pulse voltage output from the phase comparator 671 into a current, and outputs the current to the low-pass filter 672. The low-pass filter 672 removes a high-frequency component from the output signal from the charge pump circuit 675, converts the signal into a voltage, and outputs the voltage as a dc signal for controlling the voltage-controlled oscillator 673. The frequency divider 674 sets a fractional frequency division ratio in a time-averaged manner by switching the frequency division ratio of an integer, whereby fractional frequency division can be realized. In addition, the voltage-controlled oscillator 673 may use, for example, an LC oscillation circuit having an inductor and a capacitor.

[ cover 3]

The lid 3 is a silicon substrate as in the semiconductor substrate 5. Thus, the semiconductor substrate 5 and the cover 3 have the same linear expansion coefficient, and the vibration device 1 having excellent vibration characteristics in which generation of thermal stress due to thermal expansion is suppressed is obtained. In addition, since the vibration device 1 can be formed by a semiconductor process, the vibration device 1 can be manufactured with high accuracy and can be miniaturized. However, the cover 3 is not particularly limited, and may be a semiconductor substrate other than silicon, for example, a substrate made of germanium, gallium arsenide phosphide, gallium nitride, silicon carbide, or the like.

As shown in fig. 1, lid 3 has a bottomed recess 31, and recess 31 is open on lower surface 30 of lid 3 and accommodates vibrating reed 9 therein. The lid 3 is bonded to the upper surface 51 of the semiconductor substrate 5 at the lower surface 30 thereof via the bonding layer 75. Thereby, a housing space S for housing the vibrating reed 9 is formed between the lid 3 and the semiconductor substrate 5. The storage space S is airtight and is in a reduced pressure state, preferably in a state closer to vacuum. This improves the oscillation characteristics of the vibrating reed 9. However, the atmosphere in the housing space S is not particularly limited, and may be an atmosphere in which an inert gas such as nitrogen or Ar is sealed, or may be in an atmospheric pressure state or a pressurized state instead of a reduced pressure state, for example.

The vibration device 1 is explained above. As described above, this vibration device 1 has: a semiconductor substrate 5 having an upper surface 51 as a 1 st surface and a lower surface 52 as a 2 nd surface located on the opposite side of the upper surface 51; a vibrating reed 9 disposed on the upper surface 51; a circuit element 8, which is disposed on the upper surface 51 and includes an oscillation circuit 82; wirings 71 and 72 disposed on the upper surface 51 and electrically connecting the vibrating reed 9 and the oscillation circuit 82; a processing circuit 66 disposed on the lower surface 52 and processing an output signal of the oscillation circuit 82; and a through electrode 530 penetrating the semiconductor substrate 5 to electrically connect the oscillation circuit 82 and the processing circuit 66. Thus, the vibrating reed 9 and the circuit element 8 are disposed on the upper surface 51, and are electrically connected to each other via the wirings 71 and 72 disposed on the upper surface 51. As a result, as compared with the conventional case where the circuit element 8 and the vibrating reed 9 are electrically connected via the through electrode, the thickness and length of the wirings 71 and 72 can be sufficiently suppressed, and the parasitic capacitance from the wirings 71 and 72 can be sufficiently suppressed. Therefore, the CI (crystal impedance) value of the oscillation circuit 82 can be suppressed sufficiently small, and a high oscillation margin can be obtained. Therefore, deterioration of the oscillation characteristics of the vibration device 1 can be effectively suppressed.

In addition, as described above, the processing circuit 66 includes a pll (phase Locked loop) circuit. Thus, a signal of an arbitrary frequency can be generated and output based on the output signal of the oscillation circuit 82.

As described above, the circuit element 8 includes the temperature sensor 81 as a temperature detection element for detecting the temperature of the vibrating reed 9. By feeding back the temperature information output from the temperature sensor 81, the frequency variation of the output signal can be suppressed.

As described above, the vibrating reed 9 and the circuit element 8 are arranged on the upper surface 51. This can reduce the thickness of the vibration device 1.

As described above, the vibrating reed 9 is electrically connected to the wirings 71 and 72 at the end portion located on the circuit element 8 side, i.e., on the X-axis direction positive side in the present embodiment. This can further shorten the wirings 71 and 72. Therefore, the parasitic capacitance from the wirings 71 and 72 can be suppressed to be smaller.

< embodiment 2 >

Fig. 4 is a sectional view showing the vibration device of embodiment 2. Fig. 5 is a plan view showing a vibrating piece and a circuit element included in the vibrator device of fig. 4.

This embodiment is the same as embodiment 1 except that the arrangement of the vibrating reed 9 and the circuit element 8 is different. In the following description, the present embodiment will be mainly described with respect to differences from the above-described embodiment, and the description of the same matters will be omitted. In fig. 4 and 5, the same components as those of the above-described embodiment are denoted by the same reference numerals.

As shown in fig. 4 and 5, in the vibration device 1 of the present embodiment, the circuit element 8 is disposed on the upper surface 51, which is the 1 st surface of the semiconductor substrate 5, which is the 1 st semiconductor substrate. The circuit element 8 includes a semiconductor substrate 801 as a 2 nd semiconductor substrate, and a circuit portion 802 disposed on the upper surface of the semiconductor substrate 801, that is, the surface opposite to the semiconductor substrate 5. As in embodiment 1, the circuit portion 802 is provided with the temperature sensor 81 and the oscillation circuit 82. A vibrating reed 9 is disposed on an upper surface 8a, which is the 3 rd surface, of the circuit element 8. A pair of wires 71 and 72 for electrically connecting the oscillation circuit 82 and the vibrating reed 9 are provided on the upper surface 8a of the circuit element 8. As described above, the length of the wirings 71 and 72 can be reduced by disposing the circuit portion 802 on the upper surface 8a side of the circuit element 8, disposing the vibrating reed 9 on the upper surface 8a of the circuit element 8, and further disposing the wirings 71 and 72 for electrically connecting the vibrating reed 9 and the oscillator circuit 82 on the upper surface 8 a. Therefore, the parasitic capacitance from the wirings 71 and 72 can be suppressed sufficiently. Therefore, the CI (crystal impedance) value of the oscillation circuit 82 can be suppressed sufficiently small, and a high oscillation margin can be obtained. Therefore, deterioration of the oscillation characteristics of the vibration device 1 can be effectively suppressed.

A plurality of terminals 803 are provided on the lower surface 8b of the circuit element 8, i.e., the surface on the semiconductor substrate 5 side. The circuit element 8 has a plurality of through-electrodes 805 as the 2 nd through-electrodes penetrating the semiconductor substrate 801, and the circuit portion 802 and the terminals 803 are electrically connected by the through-electrodes 805. The circuit element 8 is fixed to the upper surface 51 of the semiconductor substrate 5 at the lower surface 8B thereof by a bonding member B3, and the terminal 803 and the through electrode 530 as the 1 st through electrode are electrically connected by a bonding member B3. This facilitates electrical connection between the oscillation circuit 82 and the processing circuit 66.

As described above, the vibration device 1 of the present embodiment includes: a semiconductor substrate 5 as a 1 st semiconductor substrate having an upper surface 51 as a 1 st surface and a lower surface 52 as a 2 nd surface located on the opposite side of the upper surface 51; a circuit element 8 including a 2 nd semiconductor substrate 801 and an oscillation circuit 82, the semiconductor substrate 801 being disposed on the upper surface 51 and having an upper surface 8a as a 3 rd surface located on the opposite side of the upper surface 51, the oscillation circuit 82 being disposed on the upper surface 8 a; a vibrating reed 9 disposed on an upper surface 8a of the circuit element 8; wirings 71 and 72 disposed on the upper surface 8a and electrically connecting the vibrating reed 9 and the oscillation circuit 82; and a processing circuit 66 disposed on the lower surface 52, for processing an output signal of the oscillation circuit 82, and passing through the semiconductor substrate 5 to electrically connect the oscillation circuit 82 and the processing circuit 66 via a through electrode 530 which is the 1 st through electrode.

As described above, by disposing the oscillation circuit 82 on the upper surface 8a side of the circuit element 8, disposing the vibrating reed 9 on the upper surface 8a of the circuit element 8, and further disposing the wirings 71 and 72 for electrically connecting the vibrating reed 9 and the oscillation circuit 82 on the upper surface 8a, the thickness and length of the wirings 71 and 72 can be sufficiently suppressed as compared with the case where the circuit element 8 and the vibrating reed 9 are electrically connected via the through electrode as in the related art, and the parasitic capacitance from the wirings 71 and 72 can be sufficiently suppressed to be small. Therefore, the CI (crystal impedance) value of the oscillation circuit 82 can be suppressed sufficiently small, and a high oscillation margin can be obtained. Therefore, deterioration of the oscillation characteristics of the vibration device 1 can be effectively suppressed.

As described above, the circuit element 8 has the through electrode 805 as the 2 nd through electrode which penetrates the semiconductor substrate 801 and electrically connects the oscillation circuit 82 and the through electrode 530. This facilitates electrical connection between the oscillation circuit 82 and the processing circuit 66.

According to embodiment 2 as described above, the same effects as those of embodiment 1 can be exhibited.

The vibration device of the present invention has been described above based on the illustrated embodiments, but the present invention is not limited thereto, and the structure of each part can be replaced with any structure having the same function. In addition, other arbitrary structures may be added to the present invention. Further, the embodiments can be appropriately combined.

In the above embodiment, the vibration device 1 is applied to an oscillator, but the invention is not limited thereto. For example, by using the vibrating reed 9 as a physical quantity sensor element capable of detecting angular velocity or acceleration, the vibrating device 1 can be applied to various physical quantity sensors such as an angular velocity sensor or an acceleration sensor.

In the above embodiment, the cover 3 has the recess 31, but is not limited thereto. For example, a structure is also possible in which: the semiconductor substrate 5 of the semiconductor circuit substrate 4 has a bottomed recess opened in the upper surface 51 thereof, and the lid 3 is flat. At this time, the vibrating reed 9 may be fixed to the bottom surface of the recess of the semiconductor substrate 5.