阅读说明：本技术 一种轴向封装的恒流二极管 (Axially packaged constant current diode ) 是由 周明 伍林 潘海岩 顾礼建 于 2020-08-10 设计创作，主要内容包括：本发明涉及恒流二极管技术领域,尤其为一种轴向封装的恒流二极管,包括衬底,所述衬底的顶部设置有基底,所述基底的内部开设有安装槽,所述安装槽的内部设置有安装块,所述基底的内部嵌设有量子阱,所述量子阱位于安装块的底部,所述量子阱的内部设置有半导体层；本发明通过衬底、基底、半导体层、第一金属电极、第一保护罩、第二保护罩和固定机构的设置,具有便于安装使用、导电性能良好,可以有效增加散热效果,提高电压承受范围,进而能够延长使用寿命的优点,解决了目前使用的恒流二极管功能单一、结构稳定性较差,恒流二极管的散热效果较差,导致恒流二极管容易因过热损坏,且电压承受范围较小的问题。(The invention relates to the technical field of constant current diodes, in particular to an axially packaged constant current diode, which comprises a substrate, wherein the top of the substrate is provided with a base, the inside of the base is provided with an installation groove, the inside of the installation groove is provided with an installation block, a quantum well is embedded in the base and is positioned at the bottom of the installation block, and a semiconductor layer is arranged in the quantum well; according to the invention, through the arrangement of the substrate, the semiconductor layer, the first metal electrode, the first protective cover, the second protective cover and the fixing mechanism, the LED constant current diode has the advantages of convenience in installation and use, good conductivity, capability of effectively increasing the heat dissipation effect, and improving the voltage bearing range, so that the service life can be prolonged, and the problems that the current constant current diode is easy to damage due to overheating and has a small voltage bearing range due to single function, poor structural stability and poor heat dissipation effect of the current constant current diode are solved.)

1. An axially encapsulated constant current diode comprising a substrate (1), characterized in that: the semiconductor substrate is characterized in that a base (2) is arranged at the top of the substrate (1), a mounting groove (3) is formed in the base (2), a mounting block (4) is arranged in the mounting groove (3), a quantum well (5) is embedded in the base (2), the quantum well (5) is located at the bottom of the mounting block (4), a semiconductor layer (6) is arranged in the quantum well (5), a first metal electrode (7) is fixedly mounted on the left side of the top of the mounting block (4), a second metal electrode (8) is arranged on the right side of the top of the mounting block (4), a first mask layer (9) covers the top of the base (2), a second mask layer (10) is embedded in the surface of the first mask layer (9), the second mask layer (10) is symmetrically distributed, and the first metal electrode (7) and the second metal electrode (8) penetrate through the top of the second mask layer (10), the back of basement (2) is provided with first safety cover (11), the front of basement (2) is provided with second safety cover (12), the junction of first safety cover (11) and second safety cover (12) is provided with fixed establishment (13), fixed establishment (13) are located the left and right sides of first safety cover (11) respectively, and fixed establishment (13) are the symmetric distribution.

2. The axially packaged constant current diode of claim 1, wherein: fixed establishment (13) are including fixed plate (131), spliced pole (132), connecting plate (133) and through-hole (134), fixed plate (131) weld in the intermediate position of first safety cover (11), and fixed plate (131) are the symmetric distribution, spliced pole (132) weld in the front of fixed plate (131), connecting plate (133) bolt joint in the left and right sides of second safety cover (12), the surface of connecting plate (133) is seted up in through-hole (134), spliced pole (132) be located the inside of through-hole (134) and with the inner wall sliding connection of through-hole (134).

3. The axially packaged constant current diode of claim 1, wherein: the copper plating device is characterized in that the first metal electrode (7) is a positive electrode, the second metal electrode (8) is a negative electrode, the surfaces of the first metal electrode (7) and the second metal electrode (8) are subjected to copper plating treatment, the surfaces of the first metal electrode (7) and the second metal electrode (8) are provided with limiting blocks (14), and the limiting blocks (14) are symmetrically distributed.

4. The axially packaged constant current diode of claim 1, wherein: the inner wall of first safety cover (11) and second safety cover (12) all is provided with heat conduction silicone grease, and closely laminates between first safety cover (11) and second safety cover (12) and basement (2), sign groove (15) have been seted up in the front of second safety cover (12).

5. The axially packaged constant current diode of claim 1, wherein: the substrate (1) is made of a semiconductor material, the base (2) is made of a silicon crystal material, a silicon epitaxial layer is arranged on the surface layer of the base (2) and is subjected to oxidation treatment, and insulating films are arranged on the outer sides of the base (2) and the substrate (1).

6. The axially packaged constant current diode of claim 1, wherein: the quantum well (5) is formed by heating an ion injection mounting groove (3), a semiconductor film is arranged in the middle of the quantum well (5), and an isolation layer is arranged on the outer side of the quantum well (5).

7. The axially packaged constant current diode of claim 1, wherein: the semiconductor layer (6) is a PN junction formed by sintering a P-type semiconductor and an N-type semiconductor, and a metal layer subjected to silicification is arranged between the semiconductor layer (6) and the mounting block (4).

8. The axially packaged constant current diode of claim 1, wherein: the first mask layer (9) is an aluminum oxide layer, the second mask layer (10) is a silicon dioxide layer, the second mask layer (10) is attached to the surfaces of the first metal electrode (7) and the second metal electrode (8), and the joint of the first mask layer (9) and the second mask layer (10) is sealed by epoxy resin.

Technical Field

The invention relates to the technical field of constant current diodes, in particular to an axially packaged constant current diode.

Background

Constant current sources are a common type of electronic device and apparatus and are used quite extensively in electronic circuitry. The constant current source is used for protecting the whole circuit, and can ensure the stability of the power supply current even if the voltage is unstable or the load resistance is greatly changed. A current regulator diode is a semiconductor constant current device that has been developed in recent years, and forward conduction and reverse cutoff are forward characteristics of the diode. The constant current diode has good constant current performance, simple structure, convenient use and low cost, so the constant current diode is widely applied to LEDs, semiconductor lasers and other occasions requiring constant current power supply driving. The axial packaging is a packaging form and is suitable for the installation of a low-power PCB circuit.

The current constant current diode has the advantages of single function, poor structural stability and poor heat dissipation effect, so that the current constant current diode is easily damaged due to overheating, the voltage bearing range is small, inconvenience is brought to the use of the current constant current diode, the current constant current diode is convenient to install and use, good in electric conduction performance, capable of effectively increasing the heat dissipation effect, capable of improving the voltage bearing range and capable of prolonging the service life.

Disclosure of Invention

The invention aims to provide an axially-packaged constant current diode which has the advantages of convenience in installation and use, good conductivity, effective increase of heat dissipation effect, improvement of voltage bearing range and further prolongation of service life, and solves the problems that the conventional constant current diode is easy to damage due to overheating and has a small voltage bearing range because of single function, poor structural stability and poor heat dissipation effect.

In order to achieve the purpose, the invention provides the following technical scheme: an axially packaged constant current diode comprises a substrate, wherein a base is arranged at the top of the substrate, a mounting groove is formed in the base, a mounting block is arranged in the mounting groove, a quantum well is embedded in the base and is positioned at the bottom of the mounting block, a semiconductor layer is arranged in the quantum well, a first metal electrode is fixedly mounted on the left side of the top of the mounting block, a second metal electrode is arranged on the right side of the top of the mounting block, a first mask layer covers the top of the base, a second mask layer is embedded on the surface of the first mask layer and is symmetrically distributed, the first metal electrode and the second metal electrode penetrate through the top of the second mask layer, a first protective cover is arranged on the back of the base, a second protective cover is arranged on the front of the base, and a fixing mechanism is arranged at the joint of the first protective cover and the second protective cover, the fixing mechanisms are respectively positioned on the left side and the right side of the first protection cover and are symmetrically distributed.

Preferably, fixed establishment includes fixed plate, spliced pole, connecting plate and through-hole, the fixed plate welds in the intermediate position of first safety cover, and the fixed plate is the symmetric distribution, the spliced pole welds in the front of fixed plate, the connecting plate is bolted connection in the left and right sides of second safety cover, the surface of connecting plate is seted up to the through-hole, the spliced pole be located the inside of through-hole and with the inner wall sliding connection of through-hole.

Preferably, the first metal electrode is a positive electrode, the second metal electrode is a negative electrode, the surfaces of the first metal electrode and the second metal electrode are plated with copper, and the surfaces of the first metal electrode and the second metal electrode are provided with limiting blocks which are symmetrically distributed.

Preferably, the inner walls of the first protective cover and the second protective cover are provided with heat-conducting silicone grease, the first protective cover and the second protective cover are tightly attached to the substrate, and the front face of the second protective cover is provided with an identification groove.

Preferably, the substrate is made of a semiconductor material, the base is made of a silicon crystal material, a silicon epitaxial layer is arranged on the surface layer of the base and is subjected to oxidation treatment, and insulating films are arranged on the outer sides of the base and the substrate.

Preferably, the quantum well is formed by heating an ion implantation installation groove, a semiconductor film is arranged in the middle of the quantum well, and an isolation layer is arranged outside the quantum well.

Preferably, the semiconductor layer is a PN junction formed by sintering a P-type semiconductor and an N-type semiconductor, and a metal layer subjected to silicidation is provided between the semiconductor layer and the mounting block.

Preferably, the first mask layer is an aluminum oxide layer, the second mask layer is a silicon dioxide layer, the second mask layer is attached to the surfaces of the first metal electrode and the second metal electrode, and the joint of the first mask layer and the second mask layer is sealed by epoxy resin.

Compared with the prior art, the invention has the following beneficial effects:

according to the invention, through the arrangement of the substrate, the semiconductor layer, the first metal electrode, the first protective cover, the second protective cover and the fixing mechanism, the LED constant current diode has the advantages of convenience in installation and use, good conductivity, capability of effectively increasing the heat dissipation effect, and improving the voltage bearing range, so that the service life can be prolonged, and the problems that the current constant current diode is easy to damage due to overheating and has a small voltage bearing range due to single function, poor structural stability and poor heat dissipation effect of the current constant current diode are solved.

Drawings

FIG. 1 is a schematic structural view of the present invention;

FIG. 2 is a schematic cross-sectional view of a partial structure of the present invention;

FIG. 3 is a perspective view of the present invention;

FIG. 4 is an enlarged view of a portion of the invention at A in FIG. 3;

fig. 5 is a perspective view of a partial structure of the present invention.

In the figure: 1. a substrate; 2. a substrate; 3. mounting grooves; 4. mounting blocks; 5. a quantum well; 6. a semiconductor layer; 7. a first metal electrode; 8. a second metal electrode; 9. a first mask layer; 10. a second mask layer; 11. a first protective cover; 12. a second protective cover; 13. a fixing mechanism; 131. a fixing plate; 132. connecting columns; 133. a connecting plate; 134. a through hole; 14. a limiting block; 15. the slot is identified.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

Referring to fig. 1-5, an axially packaged constant current diode includes a substrate 1, a base 2 is disposed on the top of the substrate 1, a mounting groove 3 is disposed in the base 2, a mounting block 4 is disposed in the mounting groove 3, a quantum well 5 is embedded in the base 2, the quantum well 5 is located at the bottom of the mounting block 4, a semiconductor layer 6 is disposed in the quantum well 5, a first metal electrode 7 is fixedly mounted on the left side of the top of the mounting block 4, a second metal electrode 8 is disposed on the right side of the top of the mounting block 4, a first mask layer 9 is covered on the top of the substrate 2, a second mask layer 10 is embedded on the surface of the first mask layer 9, the second mask layer 10 is symmetrically distributed, the first metal electrode 7 and the second metal electrode 8 penetrate through to the top of the second mask layer 10, a first protective cover 11 is disposed on the back of the substrate 2, and a second protective cover 12 is disposed on the front, the junction of first protection cover 11 and second protection cover 12 is provided with fixed establishment 13, fixed establishment 13 is located the left and right sides of first protection cover 11 respectively, and fixed establishment 13 is the symmetric distribution, through substrate 1, basement 2, semiconductor layer 6, first metal electrode 7, first protection cover 11, the setting of second protection cover 12 and fixed establishment 13, it uses to have the installation of being convenient for, electric conductive property is good, can effectively increase the radiating effect, improve the voltage bearing range, and then can increase of service life's advantage, it is single to have solved the constant current diode function of using at present, structural stability is relatively poor, constant current diode's radiating effect is relatively poor, lead to constant current diode because of the overheat damage easily, and the voltage bearing range is less problem.

In this embodiment, the fixing mechanism 13 includes the fixing plate 131, the connecting column 132, the connecting plate 133 and the through hole 134, the fixing plate 131 is welded in the middle position of the first protection cover 11, and the fixing plate 131 is symmetrically distributed, the connecting column 132 is welded in the front of the fixing plate 131, the connecting plate 133 is bolted to the left and right sides of the second protection cover 12, the through hole 134 is opened on the surface of the connecting plate 133, the connecting column 132 is located inside the through hole 134 and is connected with the inner wall of the through hole 134 in a sliding manner, through the fixing plate 131, the connecting column 132, the connecting plate 133 and the through hole 134, the first protection cover 11 and the second protection cover 12 can be fixed, the first protection cover 11 and the second protection cover 12 can be conveniently mounted and dismounted, and.

In this embodiment, the first metal electrode 7 is a positive electrode, the second metal electrode 8 is a negative electrode, and the surfaces of the first metal electrode 7 and the second metal electrode 8 are plated with copper, the surfaces of the first metal electrode 7 and the second metal electrode 8 are provided with the limiting blocks 14, and the limiting blocks 14 are symmetrically distributed, so that the conductive effect between the constant current diode and the circuit board can be increased by the arrangement of the first metal electrode 7, the second metal electrode 8 and the limiting blocks 14, and the constant current diode can be fixedly mounted.

In this embodiment, the inner walls of the first protective cover 11 and the second protective cover 12 are provided with heat-conducting silicone grease, the first protective cover 11, the second protective cover 12 and the substrate 2 are tightly attached to each other, the mark groove 15 is formed in the front face of the second protective cover 12, and through the arrangement of the first protective cover 11, the second protective cover 12 and the mark groove 15, the heat dissipation effect of the constant current diode can be increased, the constant current diode is prevented from being damaged due to overheating, and meanwhile, the model and specification of the constant current diode can be distinguished conveniently.

In this embodiment, the substrate 1 is made of a semiconductor material, the base 2 is made of a silicon crystal material, a silicon epitaxial layer is arranged on the surface layer of the base 2, the silicon epitaxial layer is subjected to oxidation treatment, insulating films are arranged on the outer sides of the base 2 and the substrate 1, and the base 2 and the substrate 1 are specially arranged, so that the constant current diode has the advantages of small size, high efficiency and strong safety and stability, and the service life of the constant current diode can be further prolonged.

In this embodiment, the quantum well 5 is formed by injecting ions into the mounting groove 3 and heating, a semiconductor film is disposed in the middle of the quantum well 5, and an isolation layer is disposed outside the quantum well 5, and by the arrangement of the quantum well 5, the well wall has a strong restriction effect, so that carriers have two-dimensional freedom only in a plane parallel to the well wall, and a strong absorption peak or a strong fluorescence peak caused by an exciton effect can be observed at room temperature.

In this embodiment, the semiconductor layer 6 is a PN junction formed by sintering a P-type semiconductor and an N-type semiconductor, and a metal layer subjected to silicidation is disposed between the semiconductor layer 6 and the mounting block 4, so that the stability of the semiconductor layer 6 can be increased by special arrangement of the semiconductor layer 6, and the voltage tolerance range of the constant current diode can be further improved.

In this embodiment, the first mask layer 9 is an aluminum oxide layer, the second mask layer 10 is a silicon dioxide layer, the second mask layer 10 is attached to the surfaces of the first metal electrode 7 and the second metal electrode 8, the joint between the first mask layer 9 and the second mask layer 10 is sealed by epoxy resin, and through the arrangement of the first mask layer 9 and the second mask layer 10, an external medium can be prevented from entering the constant current diode, the current uniformity of the constant current diode can be improved, and the working efficiency of the constant current diode can be increased.

The working principle is as follows: when the constant current diode is used, the constant current diode is inserted into the circuit board through the first metal electrode 7 and the second metal electrode 8 until the limiting block 14 contacts with the circuit board, then the limiting block 14 and the circuit board are welded and fixed through soldering tin, so that the welding stability of the constant current diode can be improved, the constant current diode is prevented from falling off, then the first protective cover 11 and the second protective cover 12 are respectively installed on two sides of the constant current diode, at the moment, the connecting column 132 penetrates into the through hole 134, further, the fixing plate 131 and the connecting plate 133 can be installed and fixed, the constant current diode generates heat in the using process, as the substrate 2 is made of silicon crystal material, the internal heat dissipation of silicon is more uniform, so that the diffusion of the internal temperature of the substrate 2 is facilitated, the heat is absorbed by the heat-conducting silicone grease, then the heat is transferred to the surfaces of the first protective cover 11 and the, the constant current diode is prevented from being damaged by high temperature, and the purpose of prolonging the service life of the constant current diode is achieved.

Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.