阅读说明：本技术 一种摇摆式籽晶表面腐蚀、清洗、烘干装置及工艺方法 (Swinging type seed crystal surface corrosion, cleaning and drying device and process method ) 是由 姜剑 孙聂枫 孙同年 王书杰 邵会民 付莉杰 史艳磊 李晓岚 于 2020-07-30 设计创作，主要内容包括：一种摇摆式籽晶表面腐蚀、清洗、烘干装置及工艺方法,属于半导体晶体生长技术领域,包括腐蚀槽和配套的腐蚀槽盖、设置在腐蚀槽底部中间位置的籽晶支撑平台以及配套设置在腐蚀槽两侧的高纯热氮气通入短直管、腐蚀液通入短直管、去离子水通入短直管、溢流排液短直管,所述高纯热氮气通入短直管、腐蚀液通入短直管和去离子水通入短直管的自由端均设有开关截止阀,所述装置还包括设置在腐蚀槽底部的摇摆机构；所述籽晶支撑平台包括对称分布在腐蚀槽竖直向中轴线两侧且定位在腐蚀槽底部的支撑架、借助转轴安装在支撑架上端的籽晶支撑轮以及配套的籽晶支撑轮限位机构。可对整个籽晶表面进行充分的腐蚀,并且使后道工序中籽晶的清洗和烘干工艺,有机统一结合,可避免在后道工序操作时对籽晶产生的二次污染。(A swinging seed crystal surface corrosion, cleaning and drying device and a process method belong to the technical field of semiconductor crystal growth, and comprise a corrosion tank, a matched corrosion tank cover, a seed crystal supporting platform arranged in the middle of the bottom of the corrosion tank, and high-purity hot nitrogen gas inlet short straight pipes, corrosion liquid inlet short straight pipes, deionized water inlet short straight pipes and overflow liquid discharge short straight pipes which are sleeved on two sides of the corrosion tank, wherein the free ends of the high-purity hot nitrogen gas inlet short straight pipes, the corrosion liquid inlet short straight pipes and the deionized water inlet short straight pipes are provided with switch stop valves, and the device also comprises a swinging mechanism arranged at the bottom of the corrosion tank; the seed crystal supporting platform comprises supporting frames, seed crystal supporting wheels and a matched seed crystal supporting wheel limiting mechanism, wherein the supporting frames are symmetrically distributed on two sides of the vertical central axis of the corrosion groove and positioned at the bottom of the corrosion groove, and the seed crystal supporting wheels are mounted at the upper end of the supporting frames by means of rotating shafts. The surface of the whole seed crystal can be fully corroded, the cleaning and drying processes of the seed crystal in the subsequent procedure are organically and uniformly combined, and the secondary pollution to the seed crystal during the operation of the subsequent procedure can be avoided.)

1. The utility model provides a formula seed crystal surface that sways corrodes, washs, drying device, including corrosion tank (1) and supporting corrosion tank lid (2), set up in corrosion tank (1) bottom intermediate position's seed crystal supporting platform and the configuration setting short straight tube (1-1) are let in to high-purity hot nitrogen gas at corrosion tank (1) both sides, corrosive liquid lets in short straight tube (1-2), and deionized water lets in short straight tube (1-3), overflow flowing back short straight tube (1-4), the free end that high-purity hot nitrogen gas let in short straight tube (1-1), corrosive liquid let in short straight tube (1-2) and deionized water let in short straight tube (1-3) all is equipped with switch stop valve, its characterized in that: the device also comprises a swing mechanism arranged at the bottom of the corrosion tank (1); the seed crystal supporting platform comprises supporting frames (3-1) which are symmetrically distributed on two sides of a vertical axial line of the corrosion groove (1) and positioned at the bottom of the corrosion groove (1), seed crystal supporting wheels (3-2) which are arranged at the upper end of the supporting frames (3-1) by means of rotating shafts, and a matched seed crystal supporting wheel limiting mechanism.

2. The device for etching, cleaning and drying the surface of the swing type seed crystal according to claim 1, which is characterized in that: an annular groove (3-2-1) is formed in the seed crystal supporting wheel (3-2), and the section of the annular groove (3-2-1) is isosceles trapezoid.

3. The device for etching, cleaning and drying the surface of the swing type seed crystal according to claim 1, which is characterized in that: the seed crystal supporting wheel limiting mechanism comprises a limiting rod (3-3) arranged on one side of the seed crystal supporting wheel (3-2) and limiting plates (3-4) symmetrically arranged on two sides of the supporting frame (3-1); the limiting angle of the seed crystal supporting wheel limiting mechanism is based on the vertical axis of the supporting frame (3-1), and the angle of rotation to the left and the right is 45-60 degrees.

4. The device for etching, cleaning and drying the surface of the swing type seed crystal according to claim 1, which is characterized in that: the swing mechanism comprises a base (4-1), a swing rotating shaft (4-3) arranged on the base (4-1) by means of a supporting rod (4-2), a swing platform (4-4) hinged on the swing rotating shaft (4-3) and a matched swing driving mechanism; the upper end surface of the swing platform (4-4) is connected with the bottom surface of the corrosion groove (1).

5. The device for etching, cleaning and drying the surface of the swing type seed crystal according to claim 4, wherein: the swing driving mechanism comprises a swing motor arranged on the base (4-1), a swing rotating wheel (4-5) arranged at the output end of the swing motor, and a swing rod (4-6) hinged to the lower end faces of the swing rotating wheel (4-5) and the swing platform (4-4).

6. The device for etching, cleaning and drying the surface of the swing type seed crystal according to claim 4, wherein: the swing mechanism further comprises surrounding plates (4-7) arranged on the periphery of the base (4-1) and a telescopic protective curtain (4-8) connected to the upper end face of the surrounding plates (4-7) and the lower end face of the swing platform (4-4), and the telescopic protective curtain (4-8) is made of silica gel or fluorine gel.

7. The device for etching, cleaning and drying the surface of the swing type seed crystal according to claim 1, which is characterized in that: the high-purity hot nitrogen is introduced into the short straight pipe (1-1) and the deionized water is introduced into the short straight pipe (1-3) and is distributed at the upper and lower positions and is arranged at one side of the corrosion tank (1), the overflow liquid drainage short straight pipe (1-4) and the corrosive liquid are introduced into the short straight pipe (1-2) and are distributed at the upper and lower positions and are arranged at the other side of the corrosion tank (1), and the high-purity hot nitrogen is introduced into the short straight pipe (1-1) and tilts upwards and forms an included angle of 30-40 degrees with the wall of the corrosion tank (1); the deionized water is introduced into the short straight pipe (1-3) and the corrosive liquid is introduced into the short straight pipe (1-2) to be tilted upwards, and the included angle between the deionized water and the wall of the corrosion tank (1) is 50-60 degrees; the overflow drainage short and straight parts (1-4) are tilted downwards, and the included angle between the overflow drainage short and straight parts and the wall of the corrosion groove (1) is 50-60 degrees.

8. The device for etching, cleaning and drying the surface of the swing type seed crystal according to claim 1, which is characterized in that: the bottom of the corrosion tank (1) is provided with a drain pipe and a matched switch valve, and the inner wall of the corrosion tank (1) is provided with liquid level scales for flowing corrosive liquid.

9. The device for etching, cleaning and drying the surface of the swing type seed crystal according to claim 1, which is characterized in that: crash cushions (3-5) are arranged on two sides in the corrosion groove (1) and at the same horizontal position with the seed crystal supporting wheels (3-2).

10. The process method of the oscillating seed crystal surface etching, cleaning and drying device based on the claims 1-9 is characterized in that: the process method comprises the following steps:

1) opening the corrosion tank cover (2), placing the seed crystal at a proper position of the seed crystal supporting wheel (3-2) through a special clamp, and covering the corrosion tank cover (2);

2) opening a switch stop valve of the short straight pipe (1-2) for introducing the corrosive liquid, introducing the corrosive liquid into the corrosion tank (1) at the flow rate of 0.35L/min, and closing the switch stop valve of the short straight pipe (1-2) for introducing the corrosive liquid when the liquid level of the corrosive liquid stably rises to a proper liquid level scale; starting a swing mechanism, corroding the seed crystal at a swing amplitude of 10-20 degrees and a swing speed of 1/S-2/S, after corroding for 2-5min, closing a swing motor, after the swing platform (4-1) is restored to an initial horizontal position, opening a switch valve of a drainage pipe to slowly discharge corrosive liquid at a flow rate of 0.5L/min, and after all the liquid is discharged, closing the switch valve of the drainage pipe;

3) opening a switch stop valve for introducing deionized water into the short straight pipe (1-3), introducing the deionized water into the corrosion tank (1) at the flow rate of 0.4L/min, starting a swing motor when the liquid level of the deionized water stably rises to the position of the overflow liquid discharge short straight pipe (1-4) and starts to overflow, performing overflow cleaning on the seed crystal at the swing amplitude of 10-20 degrees and the swing speed of 1/S-2/S, and closing the swing motor and the switch stop valve for introducing the deionized water into the short straight pipe (1-3) after cleaning for 10-20 min; opening the switch valve of the drain pipe to slowly discharge the deionized water at the flow rate of 0.5L/min, and closing the switch valve of the drain pipe when all the liquid is discharged;

4) opening a switch stop valve of the high-purity hot nitrogen gas introduced into the short straight pipe (1-1), introducing the high-purity hot nitrogen gas into the corrosion tank (1) at the flow rate of 2-3L/min, and purging and drying the seed crystals; and simultaneously starting the swing motor, swinging the seed crystal at the swing amplitude of 10-20 degrees and the swing speed of 1/S-2/S, and closing a switch stop valve for introducing high-purity hot nitrogen into the short straight pipe (1-1) and the swing motor after 10-15min to finish the operation.

Technical Field

The invention belongs to the technical field of semiconductor crystal growth, and particularly relates to a device and a process method for corroding, cleaning and drying the surface of a seed crystal in a crystal growth process.

Background

Semiconductor devices such as chips, high-frequency modules, large-scale integrated circuits, and very large-scale integrated circuits require high-quality single crystals as production materials thereof. In the beginning stage of most crystal growth processes, seeding and growth of molten crystals need to be carried out by means of seed crystals, and the crystal growth process cannot be carried out without the seed crystals. The purity and cleanliness of the seed crystal surface have a direct influence on the quality of the crystal during crystal growth. In the conventional seed crystal etching process, the seed crystal is immersed in the etching solution loaded by a vessel, part of the surface of the seed crystal is contacted with the wall or the bottom of the vessel, and the phenomena of low etching rate of the surface of the seed crystal, uneven overall reaction and incomplete surface impurity cleaning often occur at the mutual contact surface of the seed crystal. When the seed crystal which is not completely cleaned contacts the crystal melt, new impurities are introduced into the melt, crystal parameters are reduced, crystal defects are generated, and the growth quality of the whole crystal is influenced.

Disclosure of Invention

The invention aims to solve the technical problem of providing a swinging type seed crystal surface etching, cleaning and drying device and a process method, which can fully etch the whole seed crystal surface, organically and uniformly combine the seed crystal cleaning and drying processes in the subsequent process, avoid secondary pollution to the seed crystal during the operation of the subsequent process, effectively ensure the purity and cleanliness of the surface of the seed crystal before use, reduce the number of process steps, reduce the operation cost, improve the working efficiency, and greatly improve the crystal quality and the crystal yield during crystal growth.

The technical scheme adopted by the invention is as follows: a swinging type seed crystal surface corrosion, cleaning and drying device comprises a corrosion tank, a matched corrosion tank cover, a seed crystal supporting platform arranged at the middle position of the bottom of the corrosion tank, and high-purity hot nitrogen inlet short straight pipes, corrosion liquid inlet short straight pipes, deionized water inlet short straight pipes and overflow liquid discharge short straight pipes which are arranged at two sides of the corrosion tank in a matched mode, wherein switch stop valves are arranged at the free ends of the high-purity hot nitrogen inlet short straight pipes, the corrosion liquid inlet short straight pipes and the deionized water inlet short straight pipes; the seed crystal supporting platform comprises supporting frames, seed crystal supporting wheels and a matched seed crystal supporting wheel limiting mechanism, wherein the supporting frames are symmetrically distributed on two sides of the vertical central axis of the corrosion groove and positioned at the bottom of the corrosion groove, and the seed crystal supporting wheels are mounted at the upper end of the supporting frames by means of rotating shafts.

Furthermore, an annular groove is formed in the seed crystal supporting wheel, and the section of the annular groove is in an isosceles trapezoid shape.

Furthermore, the seed crystal supporting wheel limiting mechanism comprises a limiting rod arranged on one side of the seed crystal supporting wheel and limiting plates symmetrically arranged on two sides of the supporting frame; the limiting angle of the seed crystal supporting wheel limiting mechanism is based on the vertical axis of the supporting frame, and the angle of rotation to the left and the right is 45-60 degrees.

Furthermore, the swinging mechanism comprises a base, a swinging rotating shaft arranged on the base by means of a supporting rod, a swinging platform hinged on the swinging rotating shaft and a matched swinging driving mechanism; the upper end face of the swinging platform is connected with the bottom face of the corrosion groove.

Furthermore, the swing driving mechanism comprises a swing motor arranged on the base, a swing rotating wheel arranged at the output end of the swing motor and a swing rod hinged on the lower end face of the swing rotating wheel and the swing platform.

Further, the wabbler mechanism still includes the bounding wall that sets up around the base, connects the flexible protection curtain of terminal surface under the bounding wall up end and the platform of swaing, the material of flexible protection curtain is silica gel or fluorine glue.

Furthermore, the high-purity hot nitrogen gas inlet short straight pipe and the deionized water inlet short straight pipe are distributed at the upper and lower positions and are arranged at one side of the corrosion tank, the overflow liquid discharge short straight pipe and the corrosion liquid inlet short straight pipe are distributed at the upper and lower positions and are arranged at the other side of the corrosion tank, and the high-purity hot nitrogen gas inlet short straight pipe is tilted upwards and forms an included angle of 30-40 degrees with the wall of the corrosion tank; the deionized water is introduced into the short straight pipe, the corrosive liquid is introduced into the short straight pipe and upwarps, and the included angle between the deionized water and the wall of the corrosive tank is 50-60 degrees; the overflow liquor drainage is short, straight and downward warped, and the included angle between the overflow liquor drainage and the wall of the corrosion tank is 50-60 degrees.

Furthermore, the bottom of the corrosion tank is provided with a drain pipe and a matched switch valve, and the inner wall of the corrosion tank is provided with liquid level scales for flowing corrosive liquid.

And anti-collision cushions are arranged on two sides in the corrosion tank and at the same horizontal position with the seed crystal supporting wheels.

The process method based on the oscillating seed crystal surface corrosion, cleaning and drying device comprises the following steps:

1) opening the corrosion tank cover, placing the seed crystal at a proper position of the seed crystal supporting wheel through a special clamp, and covering the corrosion tank cover;

2) opening a switch stop valve of the short straight pipe for introducing the corrosive liquid, introducing the corrosive liquid into the corrosion tank at the flow rate of 0.35L/min, and closing the switch stop valve of the short straight pipe for introducing the corrosive liquid when the liquid level of the corrosive liquid stably rises to a proper liquid level scale; starting a swing mechanism, corroding the seed crystal at a swing amplitude of 10-20 degrees and a swing speed of 1/S-2/S, after corroding for 2-5min, closing a swing motor, after the swing platform returns to an initial horizontal position, opening a switch valve of a drainage pipe, slowly discharging corrosive liquid at a flow rate of 0.5L/min, and after all liquid is discharged, closing the switch valve of the drainage pipe;

3) opening a switch stop valve for introducing deionized water into the short straight pipe, introducing the deionized water into the corrosion tank (1) at the flow rate of 0.4L/min, starting a swing motor when the liquid level of the deionized water stably rises to the position of the overflow liquid discharge short straight pipe and starts to overflow, performing overflow cleaning on the seed crystal at the swing amplitude of 10-20 degrees and the swing speed of 1/S-2/S, and closing the swing motor and the switch stop valve for introducing the deionized water into the short straight pipe after cleaning for 10-20 min; opening the switch valve of the drain pipe to slowly discharge the deionized water at the flow rate of 0.5L/min, and closing the switch valve of the drain pipe when all the liquid is discharged;

4) opening a switch stop valve of the high-purity hot nitrogen gas inlet short straight pipe, leading the high-purity hot nitrogen gas into the corrosion tank at the flow rate of 2-3L/min, and blowing and drying the seed crystals; and simultaneously starting the swing motor, swinging the seed crystal at the swing amplitude of 10-20 degrees and the swing speed of 1/S-2/S, and closing a switch stop valve and the swing motor for introducing high-purity hot nitrogen into the short straight pipe after 10-15min to finish the operation.

The beneficial effects produced by adopting the invention are as follows: compared with the conventional static seed crystal treatment mode, the dynamic seed crystal treatment process can fully corrode the whole seed crystal surface, organically and uniformly combines the seed crystal cleaning and drying processes in the subsequent process, has more thorough treatment effect, avoids secondary pollution to the seed crystal during the subsequent process operation, effectively ensures the purity and cleanliness of the seed crystal surface before use, reduces the process step times, reduces the operation cost and improves the working efficiency. And the crystal quality and the crystal yield during crystal growth can be greatly improved.

Drawings

FIG. 1 is a schematic structural view of the present invention;

FIG. 2 is an enlarged schematic view of A in FIG. 1

Fig. 3 is a schematic view of a seed crystal supporting wheel limiting mechanism.

Detailed Description

Referring to attached figures 1-3, the oscillating seed crystal surface etching, cleaning and drying device comprises an etching tank 1, a matched etching tank cover 2, a seed crystal supporting platform arranged in the middle of the bottom of the etching tank 1, and high-purity hot nitrogen inlet short straight pipes 1-1, etching solution inlet short straight pipes 1-2, deionized water inlet short straight pipes 1-3 and overflow liquid discharge short straight pipes 1-4 which are arranged on two sides of the etching tank 1 in a matched manner, wherein free ends of the high-purity hot nitrogen inlet short straight pipes 1-1, the etching solution inlet short straight pipes 1-2 and the deionized water inlet short straight pipes 1-3 are respectively provided with a switch stop valve, and the oscillating mechanism arranged at the bottom of the etching tank 1; the seed crystal supporting platform comprises supporting frames 3-1 which are symmetrically distributed on two sides of a vertical axial line of the corrosion tank 1 and positioned at the bottom of the corrosion tank 1, seed crystal supporting wheels 3-2 which are arranged at the upper end of the supporting frames 3-1 by means of rotating shafts, and a matched seed crystal supporting wheel limiting mechanism. The corrosion tank 1, the corrosion tank cover 2, the high-purity hot nitrogen gas inlet short and straight pipe 1-1, the corrosion liquid inlet short and straight pipe 1-2, the deionized water inlet short and straight pipe 1-3 and the overflow liquid discharge short and straight pipe 1-4 are made of high-purity quartz or other high-purity corrosion-resistant temperature-resistant materials. The switch stop valves of the high-purity hot nitrogen gas inlet short straight pipe 1-1, the corrosive liquid inlet short straight pipe 1-2 and the deionized water inlet short straight pipe 1-3 are all corrosion-resistant and temperature-resistant switch valves, the size of the valves can be manually or electrically operated, the valves are used for controlling flow and flow speed, and the hoses correspondingly connected with the valves are also all corrosion-resistant and temperature-resistant hoses.

An annular groove 3-2-1 is formed in the seed crystal supporting wheel 3-2, and the section of the annular groove 3-2-1 is isosceles trapezoid. The seed crystal supporting wheel limiting mechanism comprises a limiting rod 3-3 arranged on one side of the seed crystal supporting wheel 3-2 and limiting plates 3-4 symmetrically arranged on two sides of the supporting frame 3-1; the limiting angle of the seed crystal supporting wheel limiting mechanism is based on the vertical axis of the supporting frame 3-1, and the angle of rotation to the left and the right is 45-60 degrees.

The seed crystal supporting wheel 3-2 is made of materials such as fluorine rubber or silica gel which are corrosion-resistant and temperature-resistant and have a large friction coefficient with the edge contact surface (concave surface) of the seed crystal, a limiting rod 3-3 is arranged on one side of the seed crystal supporting wheel 3-2, and the limiting rod 3-3 is made of polytetrafluoroethylene or other corrosion-resistant and temperature-resistant materials. When the swing platform 4-4 needs to be adjusted to the maximum process swing amplitude and the fastest process swing speed in the seed crystal processing process, the annular groove 3-2-1 of the seed crystal supporting wheel 3-2 and the edge contact surface of the seed crystal can generate enough friction force, when the limiting rod 3-3 touches the limiting plate 3-4 to stop the rotation of the seed crystal supporting wheel 3-2, the sliding force of inertia generated by the seed crystal is smaller than the static friction force generated by the edge contact surface of the seed crystal and the inner concave surface of the clamping wheel, and the seed crystal cannot generate relative slip with the stopped seed crystal supporting wheel 3-2. I.e. the seed crystal support wheel 3-2 stops rotating, the relative motion of the seed crystal stops.

When the seed crystal is placed at a proper position of the seed crystal supporting wheel 3-2, and the seed crystal supporting wheel 3-2 stops in positive rotation and reverse rotation in the swinging process, the seed crystal and the seed crystal supporting wheel 3-2 can generate relative maximum displacement, so that the end surface of the seed crystal cannot collide with the corresponding anti-collision buffer pad 3-5 even if the seed crystal is positioned at the relative maximum displacement, and a certain distance is kept between the seed crystal and the anti-collision buffer pad 3-5.

The support frame 3-1, the rotating shaft and the limiting plate 3-4 are made of quartz, ceramics and other corrosion-resistant and temperature-resistant materials.

The swing mechanism comprises a base 4-1, a swing rotating shaft 4-3 arranged above the base 4-1 by means of a supporting rod 4-2, a swing platform 4-4 hinged on the swing rotating shaft 4-3 and a matched swing driving mechanism; the upper end surface of the swing platform 4-4 is connected with the bottom surface of the corrosion tank 1. The swing platform 4-4 is a base platform which is corrosion-resistant, flat and not easy to deform, and is made of materials such as quartz, ceramics and the like.

The swing driving mechanism comprises a swing motor arranged on the base 4-1, a swing rotating wheel 4-5 arranged at the output end of the swing motor, and a swing rod 4-6 hinged on the lower end faces of the swing rotating wheel 4-5 and the swing platform 4-4.

The swing mechanism further comprises enclosing plates 4-7 arranged on the periphery of the base 4-1 and telescopic protective curtains 4-8 connected to the upper end faces of the enclosing plates 4-7 and the lower end faces of the swing platforms 4-4, the telescopic protective curtains 4-8 are made of silica gel or fluorine gel, can perform telescopic motion according to the swing of the swing platforms 4-4, and are good in sealing performance.

The high-purity hot nitrogen gas is introduced into the short straight pipe 1-1 and the deionized water is introduced into the short straight pipe 1-3 to be distributed at the upper and lower positions and is arranged at one side of the corrosion groove 1, the overflow liquid discharge short straight pipe 1-4 and the corrosive liquid are introduced into the short straight pipe 1-2 to be distributed at the upper and lower positions and are arranged at the other side of the corrosion groove 1, and the high-purity hot nitrogen gas is introduced into the short straight pipe 1-1 to be tilted upwards and forms an included angle of 30-40 degrees with the wall of the corrosion; the deionized water is introduced into the short straight pipe 1-3, the corrosive liquid is introduced into the short straight pipe 1-2 and is tilted upwards, and the included angle between the deionized water and the wall of the corrosion tank 1 is 50-60 degrees; the overflow drainage is short, straight and 1-4, is tilted downwards, and has an included angle of 50-60 degrees with the wall of the corrosion groove 1.

High-purity hot nitrogen is introduced into the short and straight pipe 1-1 to warp upwards, and the included angle between the high-purity hot nitrogen and the wall of the corrosion groove 1 is 30-40 degrees, so that the high-purity hot nitrogen is blown to the seed crystal to dry the seed crystal as soon as possible, and water vapor around the seed crystal and in the groove is driven away, and the water vapor is discharged through overflow liquid discharge short and straight pipe 1-4. The high-purity hot nitrogen is introduced into the short straight pipe 1-1 and is set to a certain proper height, so that the high-purity hot nitrogen is prevented from being adhered by liquid in the seed crystal corrosion and cleaning processes, and blown high-purity hot nitrogen is prevented from carrying impurities adhering to the liquid and secondarily polluting the surface of the seed crystal; the high-purity hot nitrogen is introduced into the switch stop valve of the short straight pipe 1-1, is generally in a locking state, and is opened when the high-purity hot nitrogen is required to be introduced.

The corrosion liquid is introduced into the short straight pipe 1-2 and is arranged at the lower part of the corrosion tank 1, so that the corrosion liquid is raised to a proper liquid level scale from the lower part of the seed crystal at a slower speed, the seed crystal is prevented from being washed off due to the impact on the seed crystal when the corrosion liquid is injected above the corrosion tank 1, and the part of the washed-in corrosion liquid is splashed and attached to the high-purity nitrogen gas and is introduced into the short straight pipe 1-1, so that the blown high-purity nitrogen gas is contaminated. Introducing the corrosive liquid into the short straight pipe 1-2 to upwarp, wherein the included angle between the corrosive liquid and the wall of the corrosion tank 1 is 50-60 degrees, so that the seed crystal is completely cleaned by deionized water, and after the deionized water is completely discharged through the drainage pipe, the corrosive liquid is introduced into the interface between the short straight pipe 1-2 and the corrosion tank 1 and has no residual deionized water; prevent in the hot nitrogen stoving technology of next step, the steam of remaining deionized water in kneck can be taken into to the hot nitrogen gas that flows, influences the stoving effect, reduces work efficiency. The corrosion liquid is led into the switch stop valve of the short straight pipe 1-2, is generally in a locking state, and is opened when the corrosion liquid is led.

The deionized water is introduced into the short straight pipe 1-3 and is arranged at the lower part of the etching tank 1, so that the deionized water is raised to a proper liquid level scale from the lower part of the seed crystal at a slower speed, the seed crystal is prevented from being impacted to cause the seed crystal to be washed off when the deionized water is injected above the etching tank 1, and the part of the washed deionized water is splashed and attached to the high-purity hot nitrogen gas and is introduced into the short straight pipe 1-1; deionized water is introduced into the short straight pipeline 1-3 to be tilted upwards, and the included angle between the deionized water and the wall of the corrosion tank 1 is 50-60 degrees, so that after the seed crystal is cleaned by the deionized water, the deionized water is discharged through a discharge port and then is introduced into the interface between the short straight pipeline 1-3 and the corrosion tank 1 without residual deionized water; prevent in the hot nitrogen stoving technology of next step, the steam of remaining deionized water in kneck can be taken into to the hot nitrogen gas that flows, influences the stoving effect, reduces work efficiency. Deionized water is introduced into the switch stop valve of the short straight pipeline 1-3, is generally in a locking state, and is opened when the deionized water is required to be introduced.

The overflow liquid discharge short and straight pipes 1-4 are arranged at a proper height on the corrosion tank 1, and the proper height refers to that: when the liquid is in proper liquid level scales, the swinging platform 4-4 needs to be adjusted to the maximum process swing amplitude and the fastest process swing speed, the inertia caused by the swinging to the corrosive liquid cannot rush to the interface of the overflow liquid discharge short straight pipe 1-4 and the corrosion groove 1, namely, the corrosive liquid cannot be gradually lost due to the swinging, so that the surface of the seed crystal is exposed out of the surface of the corrosive liquid in the swinging process, and the phenomena of inconsistent corrosion rate or uneven corrosion are caused. The short straight overflow drainage pipe 1-4 is tilted downwards, and the included angle between the short straight overflow drainage pipe 1-4 and the wall of the corrosion tank 1 is 50-60 degrees, so that deionized water for cleaning seed crystals is used, when the deionized water rises to the joint of the short straight overflow drainage pipe 1-4 and the corrosion tank 1, the deionized water is quickly overflowed and drained away, the backflow phenomenon of overflowing liquid cannot occur, the cleaning is more thorough, and the cleaning efficiency is improved.

The bottom of the corrosion tank 1 is provided with a drain pipe and a matched switch valve, and the inner wall of the corrosion tank 1 is provided with liquid level scales for flowing corrosive liquid.

And crash cushions 3-5 are arranged on the two sides in the corrosion tank 1 and at the same horizontal position with the seed crystal supporting wheels 3-2. The anti-collision buffer pads 3-5 are made of anti-corrosion temperature-resistant materials such as fluorine glue or polytetrafluoroethylene. In order to prevent the damage of the seed crystal or the wall of the corrosion groove 1 caused by the collision of the end face of the seed crystal to the wall of the corrosion groove 1 due to the abnormal swing speed caused by the failure of a swing motor or other factors because the rotation of the seed crystal supporting wheel 3-2 is out of control because of the accidental breakage of the limiting rod 3-3 at one side of the seed crystal supporting wheel 3-2 due to aging.

The process method based on the oscillating seed crystal surface corrosion, cleaning and drying device comprises the following steps:

1) opening the corrosion tank cover 2, placing the seed crystal at a proper position of the seed crystal supporting wheel 3-2 through a special clamp, and covering the corrosion tank cover 2;

2) opening a switch stop valve for introducing the corrosive liquid into the short straight pipe 1-2, introducing the corrosive liquid into the corrosion tank 1 at the flow rate of 0.35L/min, and closing the switch stop valve for introducing the corrosive liquid into the short straight pipe 1-2 when the liquid level of the corrosive liquid stably rises to a proper liquid level scale; starting a swing mechanism, corroding the seed crystal at a swing amplitude of 10-20 degrees and a swing speed of 1/S-2/S, after corroding for 2-5min, closing a swing motor, after the swing platform 4-1 is restored to an initial horizontal position, opening a switch valve of a drainage pipe to slowly discharge corrosive liquid at a flow rate of 0.5L/min, and after all liquid is discharged, closing the switch valve of the drainage pipe;

3) opening a switch stop valve for introducing deionized water into the short straight pipe 1-3, introducing the deionized water into the corrosion tank 1 at the flow rate of 0.4L/min, starting a swing motor when the liquid level of the deionized water stably rises to the position of the overflow drainage short straight pipe 1-4 and starts to overflow, performing overflow cleaning on the seed crystal at the swing amplitude of 10-20 degrees and the swing speed of 1/S-2/S, and closing the switch stop valve for introducing the swing motor and the deionized water into the short straight pipe 1-3 after cleaning for 10-20 min; opening the switch valve of the drain pipe to slowly discharge the deionized water at the flow rate of 0.5L/min, and closing the switch valve of the drain pipe when all the liquid is discharged;

4) opening a switch stop valve of the high-purity hot nitrogen gas introduced into the short straight pipe 1-1, introducing the high-purity hot nitrogen gas into the corrosion tank 1 at the flow rate of 2-3L/min, and blowing and drying the seed crystals; and simultaneously starting a swing motor, swinging the seed crystal at a swing amplitude of 10-20 degrees and a swing speed of 1/S-2/S, and after 10-15min, closing a switch stop valve and the swing motor for introducing high-purity hot nitrogen into the short straight pipe 1-1 to finish the operation.

The technical effects generated by the method are as follows: in the process of relative movement between the seed crystal and the seed crystal supporting wheel 3-2, the contact surface between the edge of the seed crystal and the seed crystal supporting wheel 3-2 changes at any time, and all the contact surfaces of the seed crystal are subjected to corresponding process treatment, namely all the surfaces of the seed crystal can be subjected to process treatment of corrosion, cleaning and drying. In a conventional static etch process, there are often 2 cases that lead to incomplete seed etching: 1. in the seed crystal etching process, at least one end face of the seed crystal always contacts with the inner wall of the etching vessel, etching liquid is relatively difficult to immerse in the mutual contact faces, the exchange of the etching liquid inside and outside the contact faces is relatively difficult, and the end face of the seed crystal at the contact face cannot be fully etched. 2. In the seed crystal corrosion process, the surface of the seed crystal reacts with the corrosion liquid to generate bubbles; the bubbles generated on the lower surface of the seed crystal are sometimes blocked by the lower surface and prevented from rising to the liquid surface and attaching to the lower surface of the seed crystal. Therefore, in a local area in the bubble on the lower surface of the seed crystal, the relative reaction is slow or non-reaction, so that the overall corrosion is not uniform, and the surface impurity is not thoroughly cleaned. The invention ensures that each surface of the seed crystal is fully corroded in the swinging process by adjusting the corresponding process swinging amplitude and the process swinging speed, and the bubbles generated on the lower surface of the seed crystal can be more smoothly got rid of the blockage of the lower surface of the seed crystal due to the inclination of the seed crystal and float to the liquid surface, so that the reaction is more uniform, more sufficient and more thorough. Also in the subsequent conventional cleaning and drying process, a seed crystal is usually held by a special seed crystal holder, and cleaned and dried under deionized water and a hot nitrogen gun. But the holding part of the seed crystal is not thorough relative to cleaning and drying. In the cleaning and drying process, the device of the invention also ensures that each surface of the seed crystal is fully and thoroughly cleaned and dried in the swinging process by adjusting the corresponding process swinging amplitude and the process swinging speed.