阅读说明：本技术 半导体装置以及半导体装置的制造方法 (Semiconductor device and method for manufacturing semiconductor device ) 是由 山崎舜平 栃林克明 方堂凉太 于 2019-02-14 设计创作，主要内容包括：提供一种通态电流大且可靠性高的半导体装置。一种半导体装置,包括：第一绝缘体；第一绝缘体上的第一氧化物；第一氧化物上的第二氧化物；第二氧化物上的第一导电体及第二导电体；第二氧化物上的第三氧化物；第三氧化物上的第二绝缘体；位于第二绝缘体上并与第三氧化物重叠的第三导电体；与第一绝缘体的顶面、第一氧化物的侧面、第二氧化物的侧面、第一导电体的侧面、第一导电体的顶面、第二导电体的侧面、第二导电体的顶面接触的第三绝缘体；第三绝缘体上的第四绝缘体；第四绝缘体上的第五绝缘体；以及第三导电体、第二绝缘体、第三氧化物及第五绝缘体上的第六绝缘体,其中第六绝缘体与第三导电体、第二绝缘体、第三氧化物及第五绝缘体各自的顶面接触。(A semiconductor device with a large on-state current and high reliability is provided. A semiconductor device, comprising: a first insulator; a first oxide over the first insulator; a second oxide over the first oxide; a first conductor and a second conductor on the second oxide; a third oxide on the second oxide; a second insulator on the third oxide; a third electrical conductor on the second insulator and overlapping the third oxide; a third insulator in contact with a top surface of the first insulator, a side surface of the first oxide, a side surface of the second oxide, a side surface of the first conductor, a top surface of the first conductor, a side surface of the second conductor, and a top surface of the second conductor; a fourth insulator on the third insulator; a fifth insulator on the fourth insulator; and a sixth insulator on the third conductor, the second insulator, the third oxide, and the fifth insulator, wherein the sixth insulator contacts top surfaces of the third conductor, the second insulator, the third oxide, and the fifth insulator, respectively.)

1. A semiconductor device, comprising:

a first insulator;

a first oxide over the first insulator;

a second oxide on the first oxide;

a first conductor and a second conductor on the second oxide;

a third oxide on the second oxide;

a second insulator on the third oxide;

a third electrical conductor on the second insulator and overlapping the third oxide;

a third insulator in contact with a top surface of the first insulator, a side surface of the first oxide, a side surface of the second oxide, a side surface of the first conductor, a top surface of the first conductor, a side surface of the second conductor, and a top surface of the second conductor;

a fourth insulator on the third insulator;

a fifth insulator on the fourth insulator; and

a sixth insulator on the third conductor, the second insulator, the third oxide, and the fifth insulator,

wherein the sixth insulator is in contact with respective top surfaces of the third conductor, the second insulator, the third oxide, and the fifth insulator.

2. The semiconductor device according to claim 1, wherein the first and second electrodes are formed on a substrate,

wherein both the third insulator and the fourth insulator are less permeable to one or both of oxygen and hydrogen than the first insulator.

3. The semiconductor device according to claim 1 or 2,

wherein the third insulator, the fourth insulator, and the sixth insulator are less permeable to one or both of oxygen and hydrogen than the second insulator.

4. The semiconductor device according to any one of claims 1 to 3,

wherein the fourth insulator and the sixth insulator are both an oxide containing one or both of aluminum and hafnium.

5. The semiconductor device according to any one of claims 1 to 4,

wherein the fourth insulator and the sixth insulator are both alumina.

6. The semiconductor device according to any one of claims 1 to 5,

wherein the third insulator comprises silicon and nitrogen.

7. The semiconductor device according to any one of claims 1 to 6,

wherein the first to the third oxides comprise In, an element M (M is Al, Ga, Y, or Sn), and Zn.

Technical Field

One embodiment of the present invention relates to a semiconductor device and a method for manufacturing the semiconductor device. One embodiment of the present invention relates to a semiconductor wafer, a module, and an electronic device.

Note that in this specification and the like, a semiconductor device refers to all devices which can operate by utilizing semiconductor characteristics. In addition to a semiconductor element such as a transistor, a semiconductor circuit, an arithmetic device, or a memory device is also one embodiment of a semiconductor device. A display device (a liquid crystal display device, a light-emitting display device, or the like), a projection device, an illumination device, an electro-optical device, a power storage device, a memory device, a semiconductor circuit, an imaging device, an electronic apparatus, or the like may include a semiconductor device.

Note that one embodiment of the present invention is not limited to the above-described technical field. One embodiment of the invention disclosed in this specification and the like relates to an object, a method, or a manufacturing method. In addition, one embodiment of the present invention relates to a process (process), a machine (machine), a product (manufacture), or a composition (machine).

Background

As a material that can be applied to a semiconductor thin film of a transistor, a silicon-based semiconductor material is widely known. In addition, as another material, an oxide semiconductor has attracted attention. As an oxide semiconductor, for example, a multi-component metal oxide is known in addition to a single-component metal oxide such as indium oxide and zinc oxide. Among the multi-component metal oxides, In-Ga-Zn oxides (hereinafter also referred to as IGZO) have been studied particularly In the presence of fire.

By studying IGZO, a CAAC (c-axis aligned crystalline) structure and nc (nanocrystalline) structure, which are neither single crystal nor amorphous, have been found in oxide semiconductors (see non-patent documents 1 to 3). Non-patent document 1 and non-patent document 2 disclose a technique for manufacturing a transistor using an oxide semiconductor having a CAAC structure. Further, non-patent documents 4 and 5 disclose that an oxide semiconductor having a lower crystallinity than the CAAC structure and the nc structure also has a fine crystal.

Transistors using IGZO as an active layer have a very small off-state current (see non-patent document 6), and LSIs and displays utilizing this characteristic are known (see non-patent documents 7 and 8).

[ Prior Art document ]

[ non-patent document ]

[ non-patent document 1] S.Yamazaki et al, "SID Symposium Digest of technical papers", 2012, volume 43, issue 1, pp.183-186

[ non-patent document 2] S.Yamazaki et al, "Japanese Journal of Applied Physics", 2014, volume 53, Number 4S, pp.04ED18-1-04ED18-10

[ non-patent document 3] S.Ito et al, "The Proceedings of AM-FPD' 13 Digest of technical Papers", 2013, pp.151-154

[ non-patent document 4] S.Yamazaki et al, "ECS Journal of Solid State Science and technology", 2014, volume 3, issue 9, pp.Q3012-Q3022

[ non-patent document 5] S.Yamazaki, "ECS Transactions", 2014, volume 64, issue 10, pp.155-164

[ non-patent document 6] K.Kato et al, "Japanese Journal of Applied Physics", 2012, volume 51, pp.021201-1-021201-7

[ non-patent document 7] S.Matsuda et al, "2015 Symposium on VLSI Technology Digest of technical Papers", 2015, pp.T216-T217

[ non-patent document 8] S.Amano et al, "SID Symposium Digest of Technical Papers", 2010, volume 41, issue 1, pp.626-629

Disclosure of Invention

Technical problem to be solved by the invention

An object of one embodiment of the present invention is to provide a semiconductor device with a large on-state current. Another object of one embodiment of the present invention is to provide a semiconductor device having high frequency characteristics. Another object of one embodiment of the present invention is to provide a semiconductor device with high reliability. Another object of one embodiment of the present invention is to provide a semiconductor device which can be miniaturized or highly integrated. Another object of one embodiment of the present invention is to provide a semiconductor device having excellent electrical characteristics. Another object of one embodiment of the present invention is to provide a semiconductor device with high productivity.

An object of one embodiment of the present invention is to provide a semiconductor device capable of holding data for a long period of time. An object of one embodiment of the present invention is to provide a semiconductor device with a high information writing speed. An object of one embodiment of the present invention is to provide a semiconductor device with a high degree of freedom in design. An object of one embodiment of the present invention is to provide a semiconductor device in which power consumption can be suppressed. An object of one embodiment of the present invention is to provide a novel semiconductor device.

Note that the description of the above object does not hinder the existence of other objects. In addition, one embodiment of the present invention does not necessarily achieve all of the above-described objects. The objects other than these objects will be apparent from the description of the specification, drawings, claims, and the like, and the objects other than these can be derived from the description of the specification, drawings, claims, and the like.

Means for solving the problems

One embodiment of the present invention is a semiconductor device including: a first insulator; a first oxide over the first insulator; a second oxide over the first oxide; a first conductor and a second conductor on the second oxide; a third oxide on the second oxide; a second insulator on the third oxide; a third electrical conductor on the second insulator and overlapping the third oxide; a third insulator in contact with a top surface of the first insulator, a side surface of the first oxide, a side surface of the second oxide, a side surface of the first conductor, a top surface of the first conductor, a side surface of the second conductor, and a top surface of the second conductor; a fourth insulator on the third insulator; a fifth insulator on the fourth insulator; and a sixth insulator on the third conductor, the second insulator, the third oxide, and the fifth insulator, the sixth insulator contacting top surfaces of the third conductor, the second insulator, the third oxide, and the fifth insulator, respectively.

In addition, it is preferable that both the third insulator and the fourth insulator are less permeable to one or both of oxygen and hydrogen than the first insulator.

Preferably, the third insulator, the fourth insulator, and the sixth insulator are less permeable to one or both of oxygen and hydrogen than the second insulator.

Preferably, the fourth insulator and the sixth insulator are both an oxide containing one or both of aluminum and hafnium.

Further, the fourth insulator and the sixth insulator are preferably both alumina.

Further, the third insulator preferably contains silicon and nitrogen.

Further, each of the first to third oxides preferably contains In, an element M (M is Al, Ga, Y, or Sn), and Zn.

Effects of the invention

According to one embodiment of the present invention, a semiconductor device with a large on-state current can be provided. In addition, according to one embodiment of the present invention, a semiconductor device having high frequency characteristics can be provided. In addition, according to one embodiment of the present invention, a semiconductor device with high reliability can be provided. In addition, according to one embodiment of the present invention, a semiconductor device which can be miniaturized or highly integrated can be provided. In addition, according to one embodiment of the present invention, a semiconductor device having favorable electrical characteristics can be provided. In addition, according to one embodiment of the present invention, a semiconductor device with high productivity can be provided.

In addition, a semiconductor device capable of holding data for a long period can be provided. In addition, a semiconductor device with a high data writing speed can be provided. Further, a semiconductor device with a high degree of freedom in design can be provided. In addition, a semiconductor device capable of suppressing power consumption can be provided. In addition, a novel semiconductor device can be provided.

Note that the description of these effects does not hinder the existence of other effects. In addition, one embodiment of the present invention does not necessarily have all of the above effects. Effects other than these effects are naturally apparent from the description of the specification, drawings, claims, and the like, and the effects other than these can be derived from the description of the specification, drawings, claims, and the like.