阅读说明：本技术 固体材料及半导体器件内部缺陷检测方法 (Solid material and semiconductor device internal defect detection method ) 是由 杨安丽 张新河 高博 陈施施 温正欣 *** 张国旗 于 2020-05-28 设计创作，主要内容包括：本发明实施例涉及固体及半导体器件测试分析及检测技术,公开了一种固体材料及半导体器件内部缺陷检测方法,利用超声波对待测固体材料或者半导体器件进行检测,该方法首先准备超声波设备,超声波设备包括声学信号源、声学换能器、声波采集模块和声波分析模块；在待测固体器件和声学换能器之间涂覆耦合剂材料；声学信号源发出超声信号,待测固体器件与声学换能器耦合而传输超声波；声波采集模块采集待测固体器件声波图像；声波分析模块对声波图像进行分析,获取待测固体器件内部形貌数据。非破坏测量样品表面及内部形貌的方法,简单方便。此法可改善样品与换能器之间的超声波信号传输的效果,极大地提高扫描探针声学显微镜的成像质量。(The embodiment of the invention relates to a solid and semiconductor device testing analysis and detection technology, and discloses a method for detecting internal defects of a solid material and a semiconductor device, which utilizes ultrasonic waves to detect the solid material or the semiconductor device to be detected; coating a couplant material between a solid device to be tested and the acoustic transducer; an acoustic signal source sends out an ultrasonic signal, and the solid device to be tested is coupled with an acoustic transducer to transmit ultrasonic waves; the sound wave acquisition module acquires a sound wave image of the solid device to be detected; and the sound wave analysis module analyzes the sound wave image to obtain the internal appearance data of the solid device to be detected. The method for nondestructively measuring the surface and internal appearance of the sample is simple and convenient. The method can improve the effect of ultrasonic signal transmission between the sample and the transducer, and greatly improve the imaging quality of the scanning probe acoustic microscope.)

1. A method for detecting internal defects of a solid material and a semiconductor device is characterized in that the shape of the internal defects of the semiconductor material or the device to be detected is detected by ultrasonic waves, and the method comprises the following steps:

preparing ultrasonic equipment, wherein the ultrasonic equipment comprises an acoustic signal source, an acoustic transducer, a sound wave acquisition module and a sound wave analysis module;

coating a couplant material between the solid sample or semiconductor device to be tested and the acoustic transducer;

the acoustic signal source sends out an ultrasonic signal, and the solid sample or the semiconductor device to be detected is coupled with the acoustic transducer to transmit ultrasonic waves;

the sound wave acquisition module acquires sound wave images of the solid sample or the semiconductor device to be detected;

and the sound wave analysis module analyzes the sound wave image to obtain the internal appearance data of the solid sample or the semiconductor device to be detected.

2. The method according to claim 1, wherein the solid sample or semiconductor device to be tested is a semiconductor sample or device to be tested or a ceramic device to be tested.

3. The method according to claim 1 or 2, wherein the coupling agent is petrolatum, glycerin or silicone grease.

4. The method according to claim 1 or 2, characterized in that each of said solid samples or semiconductor devices has a different shape and/or size.

Technical Field

The embodiment of the invention relates to the technical field of semiconductor detection, in particular to a method for detecting internal defects of a solid material and a semiconductor device.

Background

Currently, common defect detection means for solid and semiconductor devices include chemical etching followed by optical microscopy, industrial CT, and transmission electron microscopy. However, the chemical corrosion is extremely destructive to the sample, and the optical microscope can only observe the defects on the surface of the sample; industrial CT also causes damage to the sample by X-rays, and is difficult to measure for samples with small differences in material density.

Disclosure of Invention

In order to solve the above technical problem, an embodiment of the present invention provides a method for detecting internal defects of a solid material and a semiconductor device, in which ultrasonic waves are used to detect a solid to be detected and a semiconductor device, the method including:

preparing ultrasonic equipment, wherein the ultrasonic equipment comprises an acoustic signal source, an acoustic transducer, a sound wave acquisition module and a sound wave analysis module;

coating a coupling material between the solid device to be tested and the acoustic transducer;

the acoustic signal source sends out an ultrasonic signal, and the solid device to be tested is coupled with the acoustic transducer to transmit ultrasonic waves;

the sound wave acquisition module acquires sound wave images of the solid device to be detected;

and the sound wave analysis module analyzes the sound wave image to obtain the internal form data of the solid device to be detected.

Further optionally, the solid device under test is a semiconductor device or a ceramic device under test that can have different shapes and sizes.

Further optionally, the coupling material is vaseline, glycerol or silicone grease.

Further optionally, the acoustic transducers are two or more, each having a different shape and/or size.

Has the advantages that:

compared with the prior art, the method for nondestructively measuring the surface and internal appearance of the sample is simple and convenient. The method can improve the effect of ultrasonic signal transmission between the sample and the transducer, and greatly improve the imaging quality of the scanning probe acoustic microscope.

The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical means of the present invention more clearly understood, the present invention may be implemented in accordance with the content of the description, and in order to make the above and other objects, features, and advantages of the present invention more clearly understandable, the following detailed description of the embodiments of the present invention is provided

Drawings

The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the application and together with the description serve to explain the application and not to limit the application. In the drawings:

FIG. 1 is a flow chart of a method for detecting internal defects of a solid material and a semiconductor device according to the present invention;

FIG. 2 is a schematic view of a mounting structure between a solid device to be tested and an ultrasonic apparatus in the method shown in FIG. 1;

FIG. 3 is an enlarged view of a portion of a corresponding pair of mounting structures of the solid state device structure of FIG. 2;

fig. 4 is a partial enlarged view of a corresponding pair of mounting structures of a solid state device structure shown in fig. 2.

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present invention more apparent, embodiments of the present invention will be described in detail below with reference to the accompanying drawings. However, it will be appreciated by those of ordinary skill in the art that numerous technical details are set forth in order to provide a better understanding of the present application in various embodiments of the present invention. However, the technical solution claimed in the present application can be implemented without these technical details and various changes and modifications based on the following embodiments. The following embodiments are divided for convenience of description, and should not constitute any limitation to the specific implementation manner of the present invention, and the embodiments may be mutually incorporated and referred to without contradiction.

The technical solutions provided by the embodiments of the present application are described in detail below with reference to the accompanying drawings.

The invention aims to provide a defect detection method for a solid material and a semiconductor device, which is used for detecting the semiconductor device to be detected by utilizing ultrasonic waves and comprises the following steps:

preparing ultrasonic equipment, wherein the ultrasonic equipment comprises an acoustic signal source, an acoustic transducer, a sound wave acquisition module and a sound wave analysis module;

coating a coupling material between the solid device to be tested and the acoustic transducer;

an acoustic signal source sends out an ultrasonic signal, and the solid device to be tested is coupled with an acoustic transducer to transmit ultrasonic waves;

the sound wave acquisition module acquires a sound wave image of the solid device to be detected;

and the sound wave analysis module analyzes the sound wave image to obtain the internal appearance data of the solid device to be detected.

Further optionally, the solid device to be tested is a semiconductor device to be tested or a ceramic device to be tested.

Further optionally, the coupling material is petrolatum, glycerin, or silicone grease.

Further optionally, the acoustic transducer is two or more, each acoustic transducer having a different shape and/or size.

The Scanning Probe Acoustic Microscope (SPAM) is a new technology combining two technologies of a Scanning Probe Microscope (SPM) and a Scanning Acoustic Microscope (SAM), has the advantages of high-resolution surface imaging of the Scanning Probe Microscope and the characteristic of nondestructive internal imaging of the Scanning Acoustic Microscope, can be used for in-situ simultaneous observation of surface topography and Acoustic images of materials based on different imaging mechanisms, and is a novel multifunctional microscopic imaging technology.

When a sample is tested by the existing scanning acoustic microscope, for a biological sample, a specially designed sample pool [ CN105910560A and CN105910560B ]; however, for solid samples, such as semiconductor materials, some solid samples are directly placed on a transducer for scanning, and ultrasonic waves are transmitted for analysis by coupling the back of the sample to the transducer. However, due to the fact that the back surface of the sample is not flat, the sample is not in tight contact with the transducer, the sound wave signal is attenuated when being transmitted in the air, imaging quality is deteriorated, and even effective imaging cannot be obtained.

Compared with the prior art, the method for nondestructively measuring the surface and internal appearance of the sample is simple and convenient. The method can improve the effect of ultrasonic signal transmission between the sample and the transducer, and greatly improve the imaging quality of the scanning probe acoustic microscope.

The terms "about" and "substantially" are used herein to mean a substantial degree or extent. When used in conjunction with an event or circumstance, the terms may refer to the precise occurrence of the event or circumstance, as well as the occurrence of the event or circumstance in a manner approximating, such as by a tolerance level typical of manufacturing operations described herein.

The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.