阅读说明：本技术 图案形成材料、图案形成用组合物、图案形成方法及半导体装置的制造方法 (Pattern forming material, composition for pattern formation, pattern forming method, and method for manufacturing semiconductor device ) 是由 笹尾典克 浅川钢儿 杉村忍 于 2019-09-02 设计创作，主要内容包括：根据一种实施方式,是一种图案形成材料,其在对被加工膜进行如下加工时使用,所述加工是在具有被加工膜的基板的上述被加工膜上,使用图案形成材料形成有机膜并进行了图案形成,然后以使金属化合物含浸于上述有机膜而得的复合膜作为掩模图案,对上述被加工膜进行的加工,所述图案形成材料含有：包含在侧链具有非共享电子对和芳香环的第1单体单元的聚合物。(According to one embodiment, the present invention provides a pattern forming material for use in processing a film to be processed, the processing being performed by forming an organic film on the film to be processed on a substrate having the film to be processed using the pattern forming material, performing pattern formation, and then processing the film to be processed using a composite film in which a metal compound is impregnated in the organic film as a mask pattern, the pattern forming material including: a polymer comprising a1 st monomer unit having an unshared electron pair and an aromatic ring in a side chain thereof.)

1. A pattern forming material used for processing a film to be processed, the film being processed by forming an organic film on the film to be processed of a substrate having the film to be processed using the pattern forming material, patterning the organic film, and then processing the film to be processed using a composite film obtained by impregnating the organic film with a metal compound as a mask pattern,

the pattern forming material contains: a polymer comprising a1 st monomer unit represented by the following general formula (1),

wherein, in the general formula (1), R¹、R²And R³Each independently represents a hydrogen atom or a hydrocarbon group which may contain an oxygen atom, R¹、R²And R³Wherein at least 1 group is a hydrocarbon group, the total number of carbon atoms of which is 1 to 13, and they may be bonded to each other to form a ring; r⁴Is a hydrogen atom or a methyl group; r⁵A single bond, or a hydrocarbon group having 1 to 20 carbon atoms which may contain an oxygen atom, a nitrogen atom and/or a sulfur atom at a carbon-carbon atom or at a bond terminal, R⁵The hydrogen atom in the hydrocarbon group of (1) may be substituted with a halogen atom.

2. The pattern forming material according to claim 1, wherein in the general formula (1), R¹、R²And R³Wherein 1 or 2 groups are hydrogen atoms.

3. The pattern forming material according to claim 1 or 2, wherein the polymer further contains a 2 nd monomer unit having a crosslinkable functional group at a terminal of a side chain.

4. The pattern forming material according to claim 3, further comprising a curing agent reactive with the crosslinkable functional group.

5. A composition for pattern formation, comprising the pattern-forming material according to any one of claims 1 to 4, and an organic solvent capable of dissolving the pattern-forming material.

6. A pattern forming method, wherein, an organic film is formed on a substrate by using a pattern forming material, after the organic film is formed by pattern formation, a metal compound is impregnated into the organic film to form a composite film, and a mask pattern formed by the composite film is obtained,

the pattern forming material contains: a polymer comprising a1 st monomer unit represented by the following general formula (1),

wherein, in the general formula (1), R¹、R²And R³Each independently represents a hydrogen atom or a hydrocarbon group which may contain an oxygen atom, R¹、R²And R³Wherein at least 1 group is a hydrocarbon group, the total number of carbon atoms of which is 1 to 13, and they may be bonded to each other to form a ring; r⁴Is a hydrogen atom or a methyl group; r⁵A single bond, or a hydrocarbon group having 1 to 20 carbon atoms which may contain an oxygen atom, a nitrogen atom and/or a sulfur atom at a carbon-carbon atom or at a bond terminal, R⁵The hydrogen atom in the hydrocarbon group of (1) may be substituted with a halogen atom.

7. The pattern forming method according to claim 6, wherein in the general formula (1), R¹、R²And R³Wherein 1 or 2 groups are hydrogen atoms.

8. A method of manufacturing a semiconductor device, wherein an organic film is formed on a film to be processed of a substrate having the film to be processed using a pattern forming material,

forming a mask pattern formed of the composite film by impregnating the organic film with a metal compound after patterning the organic film,

processing the processed film using the mask pattern,

the pattern forming material contains: a polymer comprising a1 st monomer unit represented by the following general formula (1),

wherein, in the general formula (1), R¹、R²And R³Each independently represents a hydrogen atom or a hydrocarbon group which may contain an oxygen atom, R¹、R²And R³Wherein at least 1 group is a hydrocarbon group, the total number of carbon atoms of which is 1 to 13, and they may be bonded to each other to form a ring; r⁴Is a hydrogen atom or a methyl group; r⁵A single bond, or a hydrocarbon group having 1 to 20 carbon atoms which may contain an oxygen atom, a nitrogen atom and/or a sulfur atom at a carbon-carbon atom or at a bond terminal, R⁵The hydrogen atom in the hydrocarbon group of (1) may be substituted with a halogen atom.

Technical Field

In general, embodiments described herein relate to a pattern forming material, a pattern forming composition, a pattern forming method, and a method for manufacturing a semiconductor device.

Background

In a manufacturing process of a semiconductor device, a technique for forming a pattern having a high aspect ratio is highly desired. The mask pattern used in such a process is exposed to an etching gas for a long time, and therefore, high etching resistance is required.

Disclosure of Invention

Embodiments of the present invention provide a pattern forming material capable of producing a mask pattern including a metal-containing organic film having high etching resistance, a pattern forming composition including the pattern forming material, a pattern forming method, and a method for manufacturing a semiconductor device.

Drawings

Fig. 1a is a diagram illustrating a step of the method for manufacturing a semiconductor device according to the embodiment.

Fig. 1B is a diagram illustrating a step of the method for manufacturing a semiconductor device according to the embodiment.

Fig. 1C is a diagram showing a step of the method for manufacturing a semiconductor device according to the embodiment.

Fig. 1D is a diagram illustrating a step of the method for manufacturing a semiconductor device according to the embodiment.

Fig. 1E is a diagram showing a step of the method for manufacturing a semiconductor device according to the embodiment.

A pattern forming material according to an embodiment is used for processing a film to be processed, which is a substrate having the film to be processed, by forming an organic film on the film to be processed using the pattern forming material, forming a pattern on the organic film, and then processing the film to be processed using a composite film in which a metal compound is impregnated in the organic film as a mask pattern, the pattern forming material including: a polymer comprising a1 st monomer unit represented by the following general formula (1).

Wherein, in the general formula (1), R¹、R²And R³Each independently represents a hydrogen atom or a hydrocarbon group which may contain an oxygen atom, R¹、R²And R³Wherein at least 1 group is a hydrocarbon group having 1 to 13 carbon atoms in totalMay be bonded to each other to form a ring. R⁴Is a hydrogen atom or a methyl group. R⁵A single bond, or a hydrocarbon group having 1 to 20 carbon atoms which may contain an oxygen atom, a nitrogen atom and/or a sulfur atom at a carbon-carbon atom or at a bond terminal, R⁵The hydrogen atom in the hydrocarbon group of (1) may be substituted with a halogen atom.

The above configuration can provide a pattern forming material capable of forming a mask pattern including a metal-containing organic film having high etching resistance, a pattern forming composition including the pattern forming material, a pattern forming method, and a method for manufacturing a semiconductor device.