Pressure measuring device using GMR giant magnetoresistance effect

文档序号:1168416 发布日期:2020-09-18 浏览:16次 中文

阅读说明:本技术 利用gmr巨磁阻效应的压力测量装置 (Pressure measuring device using GMR giant magnetoresistance effect ) 是由 胡小炳 何必胥 陈显锋 张卫航 林庆枢 林庆维 林庆俊 于 2020-07-16 设计创作,主要内容包括:本发明公开了一种利用GMR巨磁阻效应的压力测量装置,包括连接在一起的上壳体和下壳体;上壳体内设置有插头端子;所述上壳体和下壳体的连接处设置有支撑环,支撑环的顶部设置有基板;所述基板的上表面设置有基板端子,基板端子与插头端子之间通过电气连接件连接;所述基板的下表面设置有巨磁阻薄膜,支撑环的底部设置有凹槽,凹槽内装配有隔膜,隔膜的上表面的中部设置有一永磁体;所述隔膜与下壳体之间设置有密封圈。本发明利用巨磁敏电阻的电阻值在微弱的磁场变化下会产生剧烈的变化的原理进行测量,该结构的压力测量巨磁阻效应可以使传感器的灵敏度提高1-2个数量级,而且温度特性好,线性度好。(The invention discloses a pressure measuring device utilizing GMR giant magnetoresistance effect, which comprises an upper shell and a lower shell which are connected together; a plug terminal is arranged in the upper shell; a support ring is arranged at the joint of the upper shell and the lower shell, and a substrate is arranged at the top of the support ring; the upper surface of the substrate is provided with a substrate terminal, and the substrate terminal is connected with the plug terminal through an electric connecting piece; the lower surface of the substrate is provided with a giant magnetoresistance film, the bottom of the support ring is provided with a groove, a diaphragm is assembled in the groove, and the middle part of the upper surface of the diaphragm is provided with a permanent magnet; and a sealing ring is arranged between the diaphragm and the lower shell. The invention utilizes the principle that the resistance value of the giant magneto-resistance can generate violent change under the weak magnetic field change to carry out measurement, and the pressure measurement giant magneto-resistance effect of the structure can improve the sensitivity of the sensor by 1 to 2 orders of magnitude, and has good temperature characteristic and good linearity.)

1. A pressure measuring device using GMR giant magnetoresistance effect includes an upper case and a lower case connected together; a plug terminal is arranged in the upper shell;

the method is characterized in that:

a support ring is arranged at the joint of the upper shell and the lower shell, and a substrate is arranged at the top of the support ring;

the upper surface of the substrate is provided with a substrate terminal, and the substrate terminal is connected with the plug terminal through an electric connecting piece;

the lower surface of the substrate is provided with a giant magnetoresistance film, the bottom of the support ring is provided with a groove, a diaphragm is assembled in the groove, and the middle part of the upper surface of the diaphragm is provided with a permanent magnet; and a sealing ring is arranged between the diaphragm and the lower shell.

2. The pressure measurement device using the GMR giant magnetoresistance effect according to claim 1, wherein: and the substrate terminal is arranged in a reserved round hole of the substrate and connected between the giant magnetoresistance film and the electric connecting piece.

3. The pressure measurement device using the GMR giant magnetoresistance effect according to claim 2, wherein: the electric connecting piece is a flexible circuit board made of PI materials.

4. A pressure measuring device utilizing the GMR giant magnetoresistance effect according to claim 3, wherein: the substrate is a circuit board made of ceramic materials, plastic materials, metal materials or FR materials.

5. The pressure measurement device using the GMR giant magnetoresistance effect according to claim 4, wherein: the giant magnetoresistance film is positioned and bonded on the lower surface of the substrate by an adhesive.

6. The pressure measurement device using the GMR giant magnetoresistance effect according to claim 4, wherein: the giant magnetoresistance film is packaged in the IC chip and positioned on the lower surface of the substrate through a soldering process.

7. The pressure measurement device using the GMR giant magnetoresistance effect according to claim 5 or 6, wherein: the support ring is annular and is made of an iron material with good magnetic permeability.

Technical Field

The present invention relates to the field of pressure measurement devices, and in particular, to a pressure measurement device using GMR giant magnetoresistance effect.

Background

The pressure sensor is the most commonly used sensor in industrial practice, is widely applied to various industrial automatic control environments, and relates to a plurality of lines such as water conservancy and hydropower, railway traffic, intelligent buildings, production automatic control, aerospace, military industry, petrifaction, oil wells, electric power, ships, machine tools, pipelines and the like.

The pressure sensor is used for measuring by realizing power-electricity conversion by a detection device, and the sensitivity and the resolution of the pressure sensor are very important. The existing pressure sensor has the defects that the indexes such as the detection sensitivity, the resolution ratio and the like reach the limit state of the detection of a sensitive area due to the miniaturization and the integration, so that the further improvement of the detection precision of the pressure sensor is limited, and the requirements of modern military and civil equipment are difficult to meet.

Disclosure of Invention

The invention aims to provide a pressure measuring device utilizing GMR giant magneto-resistance effect, which solves the problems of the existing products.

In order to achieve the purpose, the invention adopts the following technical scheme:

a pressure measuring device using GMR giant magnetoresistance effect includes an upper case and a lower case connected together; a plug terminal is arranged in the upper shell; the method is characterized in that: a support ring is arranged at the joint of the upper shell and the lower shell, and a substrate is arranged at the top of the support ring; the upper surface of the substrate is provided with a substrate terminal, and the substrate terminal is connected with the plug terminal through an electric connecting piece; the lower surface of the substrate is provided with a giant magnetoresistance film, the bottom of the support ring is provided with a groove, a diaphragm is assembled in the groove, and the middle part of the upper surface of the diaphragm is provided with a permanent magnet; and a sealing ring is arranged between the diaphragm and the lower shell.

Preferably, the substrate terminal is installed in a circular hole reserved in the substrate and connected between the giant magnetoresistance film and the electrical connector.

Preferably, the electrical connector is a flexible circuit board made of PI material.

Preferably, the substrate is a circuit board made of a ceramic material, a plastic material, a metal material or an FR material.

Preferably, the giant magnetoresistance film is positioned and bonded on the lower surface of the substrate by an adhesive.

Preferably, the giant magnetoresistance film is packaged in an IC chip and positioned on the lower surface of the substrate through a soldering process.

Preferably, the support ring is annular, and is made of ferrous material with good magnetic permeability.

Due to the adoption of the technical scheme, compared with the prior art, the invention has the beneficial effects that:

the invention is a pressure measuring device which uses GMR giant magneto-resistance film and is based on GMR giant magneto-resistance effect, and uses the principle that the resistance value of giant magneto-resistance can produce violent change under the weak magnetic field change to make measurement, and the pressure measuring giant magneto-resistance effect of said structure can raise the sensitivity of the sensor by 1-2 orders of magnitude, and its temperature characteristic is good and linearity is good.

Drawings

Fig. 1 is an overall cross-sectional structure diagram of a first embodiment of the present invention.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.

As shown in fig. 1, the pressure measuring device using the GMR giant magnetoresistance effect includes an upper case 1 and a lower case 9 coupled together. A plug terminal 2 is provided in the upper case 1. The upper shell, the lower shell and the plug terminal are made of the prior art, and the material, the action and the position relation belong to the prior art and are not described again.

A support ring 10 is arranged at the joint of the upper shell and the lower shell, and a base plate 4 is arranged on the top of the support ring 10. The upper surface of the substrate 4 is provided with a substrate terminal 11, and the substrate terminal 11 is connected with the plug terminal through an electric connecting piece.

The lower surface of the substrate 4 is provided with a giant magnetoresistance film 5, the bottom of the support ring 10 is provided with a groove, a diaphragm 7 is assembled in the groove, and the middle part of the upper surface of the diaphragm 7 is provided with a permanent magnet 6. And a sealing ring 8 is arranged between the diaphragm and the lower shell.

The specific design of each part is as follows:

the substrate terminal is arranged in a reserved round hole of the substrate and connected between the giant magnetoresistance film and the electric connecting piece.

The electric connector uses a PI flexible circuit board.

The substrate can be made of hard materials such as ceramics, plastics or metals, and can be further simplified into a PCB made of FR materials when necessary.

The giant magnetoresistance film has two mounting modes. The first mounting method is to position and adhere to the lower surface of the substrate with an adhesive. The second mounting method is that the giant magnetoresistance film is packaged in an IC chip and positioned on the lower surface of the substrate through a soldering process.

The support ring is annular and is made of an iron material with good magnetic permeability.

The diaphragm is made of tantalum, niobium, titanium, stainless steel and other alloy materials with excellent medium corrosion resistance and high yield strength. The septum forms an adhesive ring against it using an adhesive, positions it within the lower circular groove of the support ring, and cures the adhesive. If necessary, the diaphragm and the support ring may further use one integral independent metal member instead of using the support ring and the diaphragm separately. The membrane must be impermeable and durable.

The sealing ring is arranged on the lower side of the diaphragm in the groove on the lower side of the support ring. And after the product assembly is assembled, the product assembly is compressed with the bottom plane of the cavity in the base in an interference manner, so that the medium is isolated and sealed. The seal ring is made of HNBR materials with medium corrosion resistance and temperature resistance.

During measurement, the diaphragm can be jacked up along with the increase of the medium pressure and can also be reset along with the decrease of the medium pressure, and the permanent magnet can also be jacked up or reset. The GMR giant magneto-resistance film can sense the change of a magnetic field in the movement process of the permanent magnet, so that the resistance value of the GMR giant magneto-resistance film changes, the resistance value change of the GMR giant magneto-resistance film is converted into the change of a voltage signal under the action of the flexible circuit board, and finally the pressure value is obtained through measurement.

The invention is a pressure measuring device which uses GMR giant magneto-resistance film and is based on GMR giant magneto-resistance effect, and uses the principle that the resistance value of giant magneto-resistance can produce violent change under the weak magnetic field change to make measurement, and the pressure measuring giant magneto-resistance effect of said structure can raise the sensitivity of the sensor by 1-2 orders of magnitude, and its temperature characteristic is good and linearity is good.

In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the equipment or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention.

Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.

The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention.

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