阅读说明：本技术 一种非制冷超宽光谱光电转换器及阵列探测器 (Uncooled ultra-wide spectrum photoelectric converter and array detector ) 是由 吴东 于 2020-02-27 设计创作，主要内容包括：本公开提供了一种非制冷超宽光谱光电转换器及阵列探测器,旨在解决现有技术中光电转换工质的材料,无法兼具覆盖波长范围宽和灵敏度的问题。非制冷超宽光谱光电转换器,包括绝缘基底、光电转换工质、感光端电极和冷端电极；光电转换工质为三维狄拉克半金属。非制冷超宽光谱阵列探测器,由若干个非制冷超宽光谱光电转换器集成而成。光电转换工质采用三维狄拉克半金属：光电转换探测器同时具有光电和光热电复合效应,可以感光的范围包含紫外、可见、近红外、中红外、远红外、太赫兹波段,可以感光超宽的光谱；且有较高的灵敏度。三维狄拉克半金属作为光电转换工质,可以直接利用光电转换工质材料本身作为吸光媒质,从而提高探测器光响应度和速度。(The invention provides an uncooled ultra-wide spectrum photoelectric converter and an array detector, and aims to solve the problem that a material of a photoelectric conversion working medium in the prior art cannot cover both wide wavelength range and sensitivity. The uncooled ultra-wide spectrum photoelectric converter comprises an insulating substrate, a photoelectric conversion working medium, a photosensitive end electrode and a cold end electrode; the photoelectric conversion working medium is a three-dimensional Dirac semimetal. The uncooled ultra-wide spectrum array detector is formed by integrating a plurality of uncooled ultra-wide spectrum photoelectric converters. The photoelectric conversion working medium adopts three-dimensional Dirac semimetal: the photoelectric conversion detector has photoelectric and photothermal-electric composite effects, can sense light in a range including ultraviolet, visible, near-infrared, intermediate-infrared, far-infrared and terahertz wave bands, and can sense ultra-wide spectrum; and has higher sensitivity. The three-dimensional Dirac semimetal is used as a photoelectric conversion working medium, and a photoelectric conversion working medium material can be directly used as a light absorption medium, so that the light responsivity and the speed of the detector are improved.)

1. An uncooled ultra-wide spectrum photoelectric converter is characterized in that: the photoelectric conversion device comprises an insulating substrate, a photoelectric conversion working medium, a photosensitive end electrode and a cold end electrode; the photoelectric conversion working medium is covered on the insulating substrate;

the photoelectric conversion working medium comprises a photosensitive area and a non-photosensitive area connected with the photosensitive area; the two ends of the photoelectric conversion working medium are respectively a photosensitive end positioned at one end of the photosensitive area and a cold end positioned at one end of the non-photosensitive area, the photosensitive end electrode is connected with the photosensitive end, and the cold end electrode is connected with the cold end; the photoelectric conversion working medium is a three-dimensional Dirac semimetal.

2. The uncooled ultrawide spectrum photoelectric converter of claim 1, wherein the photosensitive region and the non-photosensitive region are perpendicular to each other and form L.

3. An uncooled ultra-wide spectrum photoelectric converter as recited in claim 1, wherein: the insulating substrate is an insulating substrate provided with electrical insulation and/or thermal insulation.

4. An uncooled ultra-wide spectrum photoelectric converter as recited in claim 1, wherein: an anti-reflection film is arranged on the upper surface of the photosensitive area; the lower surface of the photosensitive area is provided with an anti-reflection film; the photosensitive surface of the photosensitive area is a blackening surface, or the photosensitive surface of the photosensitive area is a frosted surface.

5. An uncooled ultra-wide spectrum photoelectric converter as recited in claim 1, wherein: the cold end is connected with a heat sink base; the heat sink base is made of a thermally conductive material.

6. An uncooled ultra-wide spectrum photoelectric converter as recited in claim 1, wherein: the thickness range of the photoelectric conversion working medium is 50nm-1 mu m.

7. An uncooled ultra-wide spectrum photoelectric converter as recited in claim 1, wherein: and a heat insulation layer and/or an overhead layer are/is arranged between the photosensitive area and the insulating substrate.

8. An uncooled ultra-wide spectrum photoelectric converter as recited in claim 1, wherein: three-dimensional dirac semimetal is compound HfTe₅Or compound ZrTe₅。

9. An uncooled ultra-wide spectrum photoelectric converter as recited in claim 1, wherein: the three-dimensional dirac semimetal is doped with main group elements.

10. An uncooled ultra-wide spectrum array detector is characterized in that: the integrated or spliced non-refrigeration ultra-wide spectrum photoelectric converter is formed by integrating or splicing a plurality of non-refrigeration ultra-wide spectrum photoelectric converters as claimed in any one of claims 1 to 9, and the light sensing areas of all the photoelectric conversion working media are located on the same plane.

Technical Field

The disclosure belongs to the field of photoelectric detectors, and particularly relates to an uncooled ultra-wide spectrum photoelectric converter and an array detector.

Background

The photoelectric detector has the working principle that the radiation causes the change of the physical properties of the irradiated material, such as electricity, heat and the like, and is widely applied to various fields of military affairs and national economy.

At present, due to the limitation of the band gap of the electronic band of the material, the traditional semiconductor photoelectric detection can only cover a limited wavelength region, particularly in the middle and long infrared bands, and a plurality of technical bottlenecks such as low detection rate under the uncooled (room temperature) condition exist all the time. On the other hand, although the traditional metal or semimetal has no band gap, the photoelectric effect is low, the dark current is large, and the improvement of the responsivity is obviously restricted. Therefore, it is a major difficulty in the field of optoelectronics to improve the sensitivity to a practical level by utilizing the unique advantages of the broadband response of a special semi-metal detector.

In addition, the photosensitive area and the non-photosensitive area of the photothermal discharging type photoelectric converter are basically located on the same plane, and the non-photosensitive area occupies a certain photosensitive range under a constant photosensitive range, so that the area of the photosensitive area in the photosensitive range is reduced, and the light energy absorption rate and the space integration degree are lower.

Disclosure of Invention

The invention provides an uncooled ultra-wide spectrum photoelectric converter and an array detector, and aims to solve the problems that a material of a photoelectric conversion working medium in the prior art cannot cover a wide wavelength range and is high in corresponding speed.

In order to solve the technical problem, the technical scheme adopted by the disclosure is as follows:

in one aspect, the present disclosure provides an uncooled ultra-wide spectrum photoelectric converter, including an insulating substrate, a photoelectric conversion working medium, a photosensitive end electrode, and a cold end electrode; the photoelectric conversion working medium is covered on the insulating substrate;

the photoelectric conversion working medium comprises a photosensitive area and a non-photosensitive area connected with the photosensitive area; the two ends of the photoelectric conversion working medium are respectively a photosensitive end positioned at one end of the photosensitive area and a cold end positioned at one end of the non-photosensitive area, the photosensitive end electrode is connected with the photosensitive end, and the cold end electrode is connected with the cold end; the photoelectric conversion working medium is a three-dimensional Dirac semimetal.

In a further improvement, the photosensitive area and the non-photosensitive area are perpendicular to each other and form an L shape.

The photoelectric conversion working medium is L-shaped and comprises a photosensitive area and a non-photosensitive area vertical to the photosensitive area, and two ends of the photoelectric conversion working medium are respectively a photosensitive end located at one end of the photosensitive area and a cold end located at one end of the non-photosensitive area.

The further improved scheme is as follows: the insulating substrate is an insulating substrate provided with electrical insulation and/or thermal insulation.

The further improved scheme is as follows: an anti-reflection film is arranged on the upper surface of the photosensitive area; the lower surface of the photosensitive area is provided with an anti-reflection film; the photosensitive surface of the photosensitive area is a blackening surface, or the photosensitive surface of the photosensitive area is a frosted surface.

The surface of the photoelectric conversion working medium in the crystal form is usually very smooth, the photoelectric conversion working medium has very large reflectivity to light other than middle and far infrared light, and the detection rate is low due to the fact that the reflected light escapes from a detector; the anti-reflection film is arranged to reflect the reflected light to the photoelectric conversion working medium photosensitive area for re-absorption; the reflection increasing film can reflect the light penetrating through the photoelectric conversion working medium to the light sensing area for re-absorption; the light-sensitive surface of the light-sensitive area is set to be a blackening surface or a frosting surface, so that the reflection of the light-sensitive area can be reduced; the absorption rate of the photoelectric conversion working medium to light can be improved to more than 90%.

The further improved scheme is as follows: the cold end is connected with a heat sink base; the heat sink base is made of a thermally conductive material. The cold end can be kept at the same temperature as the environment.

The further improved scheme is as follows: the thickness range of the photoelectric conversion working medium is 50nm-1 mu m.

For a photosensitive area, the photosensitive area is usually fixed, the mass of a working medium at a photosensitive end can be reduced by reducing the thickness of the working medium in the photosensitive area to be near the optical penetration depth, and the larger the temperature difference is under the condition of equal unit illumination, the larger the response voltage signal of the detector is.

The further improved scheme is as follows: and a heat insulation layer and/or an overhead layer are/is arranged between the photosensitive area and the insulating substrate. The heat loss of the photosensitive area to the surrounding environment can be reduced.

The further improved scheme is as follows: three-dimensional dirac semimetal is compound HfTe₅Or compound ZrTe₅The material can be directly used as a multispectral absorbing material, has a photoelectric and photothermal electricity release composite effect and has strong comprehensive photoelectric-electric conversion capability. Meanwhile, the three-dimensional Dirac semimetal has the essential attribute of high charge mobility, strong conductivity and high thermal electron transmission speed, so that the comprehensive response speed of the detector is higher.

The further improved scheme is as follows: the three-dimensional Dirac semimetal is doped with main group elements, and the photoelectric conversion capability of the photosensitive material is further optimized by modifying the electrical and thermal properties through doping.

The main group elements are doped in the three-dimensional dirac semimetal, so that the performance of the three-dimensional dirac semimetal can be improved, and the specific main group elements can be correspondingly adjusted according to different application occasions.

On the other hand, the disclosure also provides an uncooled ultra-wide spectrum array detector, which is formed by integrating or splicing a plurality of uncooled ultra-wide spectrum photoelectric converters in any scheme, wherein the photosensitive areas of all photoelectric conversion working media are positioned on the same plane.

The beneficial effect of this disclosure does:

the photoelectric conversion working medium in the disclosure adopts three-dimensional Dirac semimetal, and solves the problems that the material of the photoelectric conversion working medium in the prior art cannot have wide coverage wavelength range and high corresponding speed. The present disclosure has the following advantages: 1. by adopting a three-dimensional Dirac semi-metal material, the photoelectric converter detector can directly sense light in the ultraviolet, visible, near-infrared, intermediate-infrared, far-infrared and terahertz wave bands, and can sense ultra-wide spectrum. 2. The three-dimensional Dirac semimetal has the essential property of large charge mobility, strong conductive capability and high thermal electron transmission speed, so that the comprehensive response speed of the detector is higher. 3. The three-dimensional Dirac semimetal material can directly absorb light in an ultra-wide range, the three-dimensional Dirac semimetal material is used as a photoelectric conversion working medium, and the photoelectric conversion working medium material can be directly used as a light absorption medium. The use amount of the additional light absorption layer is reduced, and the total mass of the light absorption medium is further reduced, so that the larger the temperature difference under the condition of unit illumination flux is, the larger the response voltage signal of the detector is. 4. The photoelectric conversion working medium can work under zero bias voltage and certain bias voltage. 5. The adopted three-dimensional Dirac semimetal material has the characteristics of photoelectric and photo-thermal electricity-releasing composite effect, high thermal conductivity and strong photo-electric conversion capability.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present disclosure and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings may be obtained from the drawings without inventive effort.

Fig. 1 is a schematic side view of an uncooled ultra-wide spectrum photoelectric converter according to an embodiment of the disclosure.

Fig. 2 is a schematic structural diagram of the front side of an uncooled ultra-wide spectrum photoelectric converter in the present disclosure.

Fig. 3 is a schematic diagram of the top surface of an uncooled ultra-wide spectrum photoelectric converter in the present disclosure.

Fig. 4 is a schematic structural diagram of a side surface of an uncooled ultra-wide spectrum photoelectric converter provided with a suspended layer in the present disclosure.

Fig. 5 is a schematic structural diagram of an uncooled ultra-wide spectral array detector according to the present disclosure.

Fig. 6 is a schematic diagram of the working principle of the uncooled ultra-wide spectrum array detector in the present disclosure.

The reference numbers in the figures illustrate:

1-a photoelectric conversion working medium; 11-a photosensitive region; 12-a non-photosensitive region; 2-an insulating substrate; 3-heat sink base; 4-a photosensitive terminal electrode; 5-a cold-end electrode; 6-anti-reflection film; 7-a reflection increasing film; 8-a suspended layer.

Detailed Description

The technical solution in the embodiments of the present disclosure will be clearly and completely described below with reference to the drawings in the embodiments of the present disclosure. It should be understood that the specific embodiments described herein are merely illustrative of the disclosure and are not intended to limit the disclosure. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the disclosure without inventive step, are within the scope of the disclosure.