阅读说明：本技术 一种测量集成电路内部温度的方法 (Method for measuring internal temperature of integrated circuit ) 是由 苏洋 于 2021-07-13 设计创作，主要内容包括：本发明涉及集成电路技术领域,具体涉及一种测量集成电路内部温度的方法,先测出待测电路极限工作温度及ESD接触二极管电压值,得到电压温度变化斜率,随后调节电路的工作温度,记录下失效状态时的电压值,最后算出对应的失效温度,通过采用上述这种测量集成电路内部温度的方法,不用再增加温度测量设备就可以准确得出电路所在的温度,且定位迅速,通过分析测试数据可以直接得出对应的温度,不用每次更换温度进行恒温等待,且通过不同的管脚可以测试出管芯不同位置的温度,从而对大面积的芯片进行定位时更加快速高效。(The invention relates to the technical field of integrated circuits, in particular to a method for measuring the internal temperature of an integrated circuit, which comprises the steps of firstly measuring the ultimate working temperature of a circuit to be measured and the voltage value of an ESD contact diode to obtain the voltage temperature change slope, then adjusting the working temperature of the circuit, recording the voltage value in a failure state, and finally calculating the corresponding failure temperature.)

1. A method of measuring internal temperature of an integrated circuit, comprising: the method comprises the following steps:

s1: measuring the ultimate working temperature of the circuit to be measured and the voltage values of the ESD contact diode, namely T1, T2, V1 and V2, and deducting absolute errors to obtain a voltage temperature change slope S;

s2: adjusting the working temperature of the circuit until failure occurs, and recording the voltage value when the failure state is the Vf;

s3: and converting the corresponding failure temperature Tf according to the failure voltage value.

2. The method of claim 1, wherein the step of measuring the internal temperature of the integrated circuit comprises: in step S1, the temperature of different locations of the die are tested through different pins.

3. The method of claim 1, wherein the step of measuring the internal temperature of the integrated circuit comprises: in step S1, the voltage temperature change Slope = (V2-V1)/(T2-T1).

4. The method of claim 1, wherein the step of measuring the internal temperature of the integrated circuit comprises: in step S3, Tf = T1+ (Vf-V1)/slope.

Technical Field

The invention relates to the technical field of integrated circuits, in particular to a method for measuring the internal temperature of an integrated circuit.

Background

In the practical application process of the integrated circuit, the situation that the integrated circuit has temperature stress failure is found, and when the integrated circuit is subjected to failure positioning, a failure temperature point needs to be determined. Larger steps are typically used for determination, but the method is relatively coarse in locating failure temperatures, and each temperature needs to wait for a temperature stabilization time, so that the locating time is relatively long.

On the other hand, most integrated circuits contain an ESD protection diode, the diode has a characteristic of changing with temperature, when conducting in the forward direction, a conduction voltage drop can be tested by applying a fixed current, the voltage drop changes with temperature, so that a linear relation of the voltage drop change with temperature can be obtained, and when the current is fixed, the temperature rises, and the forward voltage drop also linearly drops.

Disclosure of Invention

Aiming at the defects in the prior art, the invention provides a method for measuring the internal temperature of an integrated circuit, and aims to solve the technical problem of how to quickly and accurately measure the failure temperature of a failure positioning point in the integrated circuit.

In order to solve the technical problems, the technical scheme provided by the invention is as follows: a method of measuring the internal temperature of an integrated circuit, the method comprising the steps of:

s1: measuring the ultimate working temperature of the circuit to be measured and the voltage values of the ESD contact diode, namely T1, T2, V1 and V2, and deducting absolute errors to obtain a voltage temperature change slope S;

s2: adjusting the working temperature of the circuit until failure occurs, and recording the voltage value when the failure state is the Vf;

s3: and converting the corresponding failure temperature Tf according to the failure voltage value.

Further, in step S1, the temperature of different positions of the die is tested through different pins.

Further, in step S1, the voltage temperature change Slope = (V2-V1)/(T2-T1).

Further, in step S3, Tf = T1+ (Vf-V1)/slope.

The beneficial effect that this technical scheme brought is: by adopting the method for measuring the internal temperature of the integrated circuit, the temperature of the circuit can be accurately obtained without adding temperature measuring equipment, the positioning is rapid, the corresponding temperature can be directly obtained by analyzing test data, the temperature is not required to be changed every time for constant temperature waiting, and the temperatures of different positions of a tube core can be tested through different pins, so that the method is quicker and more efficient when a large-area chip is positioned.

Drawings

The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:

FIG. 1 is a flow chart of steps in an embodiment of a method of measuring an internal temperature of an integrated circuit according to the invention;

FIG. 2 is a graph showing variations of diode drop and temperature in one embodiment of a method for measuring internal temperature of an integrated circuit according to the present invention.

Detailed Description

The preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings, and it should be understood that the preferred embodiments described herein are merely for purposes of illustration and explanation, and are not intended to limit the present invention. As shown in fig. 1, the method for measuring the internal temperature of the integrated circuit comprises the following steps:

s1: measuring the ultimate working temperature of the circuit to be measured and the voltage values of the ESD contact diode, namely T1, T2, V1 and V2, and deducting absolute errors to obtain a voltage temperature change slope S;

s2: adjusting the working temperature of the circuit until failure occurs, and recording the voltage value when the failure state is the Vf;

s3: and converting the corresponding failure temperature Tf according to the failure voltage value.

Therefore, the change relation curve of the diode voltage drop and the temperature can be obtained, the internal temperature can be rapidly positioned, the corresponding temperature can be directly obtained by analyzing test data, the constant temperature waiting is not needed to be carried out by changing the temperature every time in the prior art, and the working efficiency is greatly improved.

In this embodiment, in step S1, the temperatures of different positions of the die are tested through different pins, so that the method is faster and more effective when the large-area chip is subjected to temperature positioning, and the work efficiency is greatly improved.

In the present embodiment, in step S1, the voltage temperature change Slope = (V2-V1)/(T2-T1), and the voltage temperature change Slope can be obtained by this formula.

In the present embodiment, in step S3, Tf = T1+ (Vf-V1)/slope, and thus the corresponding failure temperature can be obtained by the formula.

In summary, by adopting the method for measuring the internal temperature of the integrated circuit, the temperature of the circuit can be accurately obtained without adding a temperature measuring device, the positioning is rapid, the corresponding temperature can be directly obtained by analyzing the test data, the temperature can be directly changed for constant temperature waiting at each time, and the temperatures of different positions of the tube core can be tested through different pins, so that the positioning of a large-area chip is more rapid and efficient.

Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that changes may be made in the embodiments and/or equivalents thereof without departing from the spirit and scope of the invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.