阅读说明：本技术 抗蚀剂的剥离液 (Resist stripping liquid ) 是由 谷本树一 文藏隆志 新城沙耶加 都木新介 于 2018-09-12 设计创作，主要内容包括：本发明为用于提供容易除去微细的布线间的抗蚀剂的技术的、以含有钾盐和溶纤剂为特征的抗蚀剂的剥离液、以及以使用上述抗蚀剂的剥离液处理施加有抗蚀剂的基材为特征的抗蚀剂的除去方法。(The present invention provides a resist stripping solution characterized by containing a potassium salt and a cellosolve, and a resist removing method characterized by treating a substrate to which a resist is applied with the resist stripping solution, for providing a technique for easily removing a resist between fine wirings.)

1. A resist stripping solution is characterized in that,

contains potassium salt and cellosolve.

2. The resist stripping liquid according to claim 1,

it also contains silicate.

3. The resist stripping liquid according to claim 1 or 2,

the cellosolve is isopropyl cellosolve.

4. The resist stripping liquid according to any one of claims 1 to 3,

the potassium salt is potassium hydroxide.

5. The resist stripping liquid according to claim 2,

the silicate is potassium silicate.

6. A resist stripping solution kit is characterized in that,

comprises the following steps: a first solution 1 containing a potassium salt, and a second solution 2 containing a cellosolve.

7. The resist stripping liquid set according to claim 6,

also included is a silicate-containing solution 3.

8. A method for removing a resist, characterized in that,

treating a substrate having a resist applied thereto with the stripping liquid for a resist according to any one of claims 1 to 5.

9. A method for manufacturing a printed wiring board, comprising a step of removing a resist from a substrate to which the resist is applied,

the use of any claim 1 ~ 5 of the resist stripping liquid for removing resist.

10. A method for manufacturing a semiconductor substrate, comprising a step of removing a resist from a base material to which the resist is applied,

the use of any claim 1 ~ 5 of the resist stripping liquid for removing resist.

11. A method for manufacturing a flat panel display, comprising a step of removing a resist from a substrate to which the resist is applied,

the use of any claim 1 ~ 5 of the resist stripping liquid for removing resist.

12. A method for manufacturing a lead frame, comprising a step of removing a resist from a substrate to which the resist is applied,

the use of any claim 1 ~ 5 of the resist stripping liquid for removing resist.

Technical Field

The present invention relates to a resist stripping solution capable of stripping a resist from a substrate to which the resist is applied.

Background

In the production of printed wiring boards, and in the stripping solutions for resists such as dry film resists used mainly in the semi-additive process, amine-based stripping solutions have been used in association with the formation of fine wiring.

However, the conventional amine-based resist stripping solutions have problems of difficulty in waste liquid disposal and overseas regulations, and thus have been avoided.

In recent years, in order to avoid the problem of the stripping solution for amine-based resists, there has been reported a stripping solution containing sodium hydroxide and a cellosolve (patent document 1) which has a problem that the resist is difficult to remove between fine wirings in recent years because the resist is not finely crushed at the time of stripping.

Disclosure of Invention

Problems to be solved by the invention

Accordingly, an object of the present invention is to provide a technique for easily removing a resist between fine wirings.

Means for solving the problems

As a result of intensive studies to solve the above problems, the present inventors have found that a solution containing a potassium salt and a cellosolve can finely pulverize even a resist between very fine wirings as compared with a solution containing sodium hydroxide and a cellosolve as in patent document 1, and have completed the present invention.

That is, the present invention relates to a resist stripping solution characterized by containing a potassium salt and a cellosolve.

The present invention also relates to a method for removing a resist, which is characterized by treating a substrate to which the resist is applied with the resist stripping liquid.

Further, the present invention relates to a resist stripping liquid kit comprising a 1 st liquid containing a potassium salt, and a 2 nd liquid containing a cellosolve.

The present invention also relates to a method for producing a printed wiring board, a semiconductor substrate, a flat panel display, or a lead frame, which comprises a step of removing a resist from a substrate to which the resist is applied, wherein the resist is removed using the resist stripping solution.

Effects of the invention

The resist stripping solution of the present invention can finely pulverize even a resist between fine wirings.

Therefore, the resist stripping solution of the present invention is suitable for a method for producing a printed wiring board, a semiconductor substrate, a flat panel display, or a lead frame, which includes a step of removing a resist from a substrate to which the resist is applied.

Detailed Description

The resist stripping solution of the present invention (hereinafter referred to as "the present stripping solution") contains potassium hydroxide and a cellosolve.

The potassium salt in the stripping liquid of the present invention is not particularly limited, and examples thereof include potassium hydroxide, potassium carbonate, and the like, and potassium silicate corresponding to silicate described later is not contained in the potassium salt, and potassium hydroxide is preferable among these, and the content of the potassium salt in the stripping liquid of the present invention is not particularly limited, and is, for example, preferably 0.75 mol/L or less, more preferably 0.65 mol/L or less, and particularly preferably 0.55 mol/L or less.

The cellosolve used in the stripping liquid of the present invention is an ether of ethylene glycol, and examples thereof include isopropyl cellosolve, butyl cellosolve, dimethyl cellosolve, phenyl butyl cellosolve, methyl cellosolve, ethyl cellosolve, phenyl cellosolve, benzyl cellosolve, carbitol cellosolve, and diethyl cellosolve, among which isopropyl cellosolve is preferable, and 1 or more of these cellosolves may be used in combination of 2 or more.

The stripping liquid of the present invention preferably further contains silicate for suppressing the corrosion of the metal, the silicate is not particularly limited, and examples thereof include potassium silicate and sodium silicate, among which potassium silicate is preferable, and the content of the silicate in the stripping liquid of the present invention is not particularly limited, and is, for example, preferably 0.002 to 0.15 mol/L, more preferably 0.006 to 0.1 mol/L, and particularly preferably 0.03 to 0.065 mol/L.

The stripping liquid of the present invention is preferably composed of only the above components, but may contain other components such as polyoxyalkylene alkyl ether-based and silicon-based defoaming agents as long as the effects of the present invention are not impaired.

The stripping solution of the present invention described above can be prepared by dissolving the above components in water. The pH of the stripping liquid of the present invention is not particularly limited if it is alkaline, but it is usually alkaline only by dissolving the above components in water, and therefore it is not particularly necessary to adjust the pH. The stripping solution of the present invention can be prepared by dissolving the above components separately in water in advance to prepare a stripping solution kit of the resist, and mixing them. Specifically, there are a resist stripping solution kit comprising the first solution 1 containing a potassium salt and the second solution 2 containing a cellosolve, a resist stripping solution kit further comprising the third solution 3 containing a silicate, a resist stripping solution kit further comprising the above-mentioned other components appropriately contained in the respective solutions, and the like.

By treating a substrate to which a resist is applied with the stripping liquid of the present invention, the resist is finely crushed, and the resist can be removed.

The conditions for treating a substrate having a resist applied thereto with the stripping liquid of the present invention are not particularly limited, and examples thereof include a condition of immersing the substrate in the stripping liquid of the present invention at 10 to 80 ℃ for about 1 to 60 minutes, and a condition of spraying the stripping liquid of the present invention at 10 to 80 ℃ onto the substrate for about 1 to 60 minutes. In the dipping, the substrate may be shaken or ultrasonic waves may be applied to the stripping solution of the present invention.

The type of the resist is not particularly limited, and may be, for example, a dry film resist, a liquid resist, or the like. The type of dry film resist is not particularly limited, and for example, an alkali-soluble dry film resist is preferable. Examples of the alkali-soluble dry film resist include RD-1225 (25 μm thick for SAP) (manufactured by Hitachi chemical Co., Ltd.).

The substrate to which the resist is applied is not particularly limited, and examples thereof include a printed wiring board, a semiconductor substrate, a flat panel display, a thin film, a substrate, a member, and the like formed of various metals and alloys used for a lead frame.

The stripping solution of the present invention can remove a resist from a substrate to which the resist is applied, and therefore can be used in a method for manufacturing a printed wiring board, a semiconductor substrate, a flat panel display, a lead frame, or the like, which includes a step of removing such a resist.

Among the above-mentioned production methods, a production method of a printed wiring board including a step of removing a resist from a substrate to which the resist is applied is preferable, and a production method of a printed wiring board by a semi-additive method is particularly preferable, and the line/pitch (L/S) which can be removed by the stripping solution of the present invention is not particularly limited, and the resist can be removed even at a line/pitch of 50/50 μm or less, and preferably at a line/pitch of 10/10 to 40/40 μm.