阅读说明：本技术 一种碳化硅石墨烯衬底外延材料的制备方法 (Preparation method of silicon carbide graphene substrate epitaxial material ) 是由 不公告发明人 于 2020-05-18 设计创作，主要内容包括：一种碳化硅石墨烯衬底外延材料的制备方法,属于单晶材料制备技术领域。本发明解决了目前制备碳化硅石墨烯衬底外延材料时存在的缺陷问题。本发明提供了一种碳化硅石墨烯衬底外延材料的制备方法,包括碳化硅基层的生长,碳化硅-石墨烯层的生长,利用衬底制备专用设备对碳化硅-石墨烯复合层进行加工,获得碳化硅石墨烯外延晶体材料,切割后得到的碳化硅晶体再次生长石墨烯,再次经过加工后得到碳化硅石墨烯衬底外延材料,依次反复操作,即可获得工业化碳化硅石墨烯衬底外延材料。(A preparation method of a silicon carbide graphene substrate epitaxial material belongs to the technical field of single crystal material preparation. The invention solves the defect problem existing in the preparation of the silicon carbide graphene substrate epitaxial material at present. The invention provides a preparation method of a silicon carbide graphene substrate epitaxial material, which comprises the steps of growing a silicon carbide substrate layer and a silicon carbide-graphene layer, processing a silicon carbide-graphene composite layer by using special substrate preparation equipment to obtain a silicon carbide graphene epitaxial crystal material, growing graphene on a cut silicon carbide crystal again, processing again to obtain the silicon carbide graphene substrate epitaxial material, and repeating the operations in sequence to obtain the industrial silicon carbide graphene substrate epitaxial material.)

1. A preparation method of a silicon carbide graphene substrate epitaxial material is characterized by comprising the following steps:

the method comprises the following steps: growing a silicon carbide base layer;

step two: growing a silicon carbide-graphene layer;

step three: processing the silicon carbide-graphene composite layer by using special equipment for preparing the substrate to obtain a silicon carbide graphene epitaxial wafer material;

step four: and (3) growing the graphene again on the cut silicon carbide crystal through the third step, processing again to obtain the silicon carbide graphene substrate epitaxial material, and repeating the operation in sequence to obtain the industrial silicon carbide graphene substrate epitaxial material.

2. The method for preparing the silicon nitride graphene substrate epitaxial material according to claim 1, wherein the specific implementation steps of the first step are as follows:

step 1: preparing high-purity silicon carbide powder cakes in a high-temperature purification furnace by using high-purity carbon powder and high-purity silicon particles;

step 2: simulating the optimal temperature and pressure for the growth of the silicon carbide crystal by using special simulation software VR-PVT-SiC for the growth of the silicon carbide crystal through a simulation technology;

and step 3: and setting the growth temperature and pressure of the silicon carbide base layer in a high-temperature resistance furnace, introducing nitrogen protective gas, and maintaining the temperature for 115 hours under the conditions to obtain the 300-micron silicon carbide base layer.

3. The method for preparing the silicon nitride graphene substrate epitaxial material according to claim 2, wherein the method comprises the following steps: and (3) controlling the purity of the silicon carbide powder material cake in the step 1 to be 99.999%.

4. The method for preparing the epitaxial material of the silicon carbide graphene substrate according to claim 2, wherein the method comprises the following steps: in the step 2, the optimal growth temperature of the silicon carbide base layer is 2300 ℃, and the optimal growth pressure of the silicon carbide base layer is 2.5x10⁴pa。

5. The method for preparing the silicon carbide graphene substrate epitaxial material according to claim 1, wherein the concrete implementation steps of the second step are as follows: and (3) putting the silicon carbide crystal taken out in the step one into a high-pressure reaction furnace, adjusting the temperature and the pressure, and slowly evaporating silicon atoms to form the graphene layer with the C-C structure.

6. The method for preparing the epitaxial material of the silicon carbide graphene substrate according to claim 5, wherein the method comprises the following steps: in the second step, the temperature of the high-pressure reaction furnace is regulated to 1650 ℃, and the pressure of the high-pressure reaction furnace is regulated to 6.7x10⁵pa, by which the silicon atoms are slowly evaporated.

7. The method for preparing the epitaxial material of the silicon carbide graphene substrate according to claim 1, wherein the method comprises the following steps: and thirdly, rounding, chamfering, cutting, grinding and polishing the silicon carbide graphene by using special equipment for preparing the substrate.

8. The method for preparing the epitaxial material of the silicon carbide graphene substrate according to claim 1, wherein the method comprises the following steps: the processing method in the fourth step comprises rounding, chamfering, cutting, grinding and polishing.

Technical Field

The invention relates to a preparation method of a silicon carbide graphene substrate epitaxial material, and belongs to the technical field of single crystal material preparation.

Background

Graphene has excellent optical, electrical and mechanical properties, has important application prospects in the aspects of materials science, micro-nano processing, energy, biomedicine, drug delivery and the like, is considered to be a future revolutionary material, exists in the nature, is difficult to strip out a single-layer structure, is graphite after being laminated, contains about 300 ten thousand layers of graphene in the graphite with the thickness of 1 mm, and can be a base layer or even only one layer of graphene after a pencil is slightly scratched on paper. At present, the common powder production methods of graphene are a mechanical stripping method, an oxidation-reduction method and a silicon carbide epitaxial growth method, and the film production method is a chemical vapor deposition method. The current graphene preparation methods also have the following defects:

1. the redox degree of the redox graphene material which is widely applied at present cannot be accurately controlled, the process is complex, integration is not easy, and industrialization is difficult to realize.

2. The chemical vapor deposition method and the silicon carbide epitaxial growth graphene are still immature in device processing technology, the fusion degree between the silicon carbide and the graphene sheet layer is not high, and a certain amount of pollution can be generated during preparation of the graphene.

In summary, a method for preparing a silicon carbide graphene substrate epitaxial material with low pollution, simple process and high material fusion degree is needed.

Disclosure of Invention

The invention provides a preparation method of a silicon carbide graphene substrate epitaxial material, aiming at solving the problems of low material fusion degree, complex process and difficult industrialization of the existing graphene preparation method.

The technical scheme of the invention is as follows:

a preparation method of a silicon carbide graphene substrate epitaxial material comprises the following steps:

step one, growing a silicon carbide base layer;

growing a silicon carbide-graphene layer;

processing the silicon carbide-graphene composite layer by using special equipment for substrate preparation to obtain a silicon carbide graphene epitaxial crystal material;

and step four, the silicon carbide crystal obtained after cutting is subjected to secondary graphene growth again through the step three, the silicon carbide graphene substrate epitaxial material is obtained after processing again, and the industrial silicon carbide graphene substrate epitaxial material can be obtained through repeated operation in sequence.

Further, the specific implementation steps of the first step are as follows:

step 1: preparing high-purity silicon carbide powder cakes in a high-temperature purification furnace by using high-purity carbon powder and high-purity silicon particles;

step 2: simulating the optimal temperature and pressure for the growth of the silicon carbide crystal by using special simulation software VR-PVT-SiC for the growth of the silicon carbide crystal through a simulation technology;

and step 3: and setting the growth temperature and pressure of the silicon carbide base layer in a high-temperature resistance furnace, introducing nitrogen protective gas, and maintaining the temperature for 115 hours under the conditions to obtain the 300-micron silicon carbide base layer.

Further, the purity of the silicon carbide powder material cake in the step 1 is controlled to be 99.999 percent.

Further, the optimal growth temperature of the silicon carbide base layer in the step 2 is 2300 ℃, and the optimal growth pressure of the silicon carbide base layer is 2.5x10⁴pa。

Further, the concrete implementation steps of the second step are as follows: and (3) putting the silicon carbide crystal taken out in the step one into a high-pressure reaction furnace, adjusting the temperature and the pressure, and slowly evaporating silicon atoms to form the graphene layer with the C-C structure.

Further, in the second step, the temperature of the high-pressure reaction furnace is adjusted to 1650 ℃, and the pressure of the high-pressure reaction furnace is adjusted to 6.7x10⁵pa, by which the silicon atoms are slowly evaporated.

Further, in the third step, the silicon carbide graphene is subjected to rounding, chamfering, cutting, grinding and polishing by using special equipment for substrate preparation.

Further, the processing method in the fourth step is rounding, chamfering, cutting, grinding and polishing.

The invention has the beneficial effects that:

1. the required raw materials are collected and can be repeatedly used, so that the material utilization rate is improved, and the experimental production cost is reduced;

2. the invention avoids the work of chemical coating, etching and the like, has no pollution and simple working procedure;

3. the material obtained by the invention has higher fusion degree, and secondary processing is avoided;

4. the silicon carbide graphene material prepared by the method has good performance.

Drawings

Fig. 1 is a process flow diagram of a preparation method of a silicon carbide graphene substrate epitaxial material.

Detailed Description

The technical solutions of the present invention are further described below with reference to the following examples, but the present invention is not limited thereto, and any modifications or equivalent substitutions may be made to the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention.