阅读说明：本技术 基于模型的离子束刻蚀速率控制方法及装置 (Ion beam etching rate control method and device based on model ) 是由 景晓军 黄海 杨威 张芳沛 吴胜 陈千千 于 2019-11-18 设计创作，主要内容包括：本发明实施例提供了一种离子束刻蚀的刻蚀速率控制方法、离子束刻蚀方法及装置,其中,速率控制方法包括：获取目标刻蚀速率；将目标刻蚀速率代入速率确定模型,得到工艺参数需满足的条件；其中,速率确定模型为：以工艺参数为自变量、以刻蚀速率为因变量的模型,速率确定模型是通过样本特征参数、样本刻蚀速率对待训练模型进行训练得到的模型；根据工艺参数需满足的条件,调节工艺参数的值,以使得按工艺参数的值进行刻蚀所得到的实际刻蚀速率与目标刻蚀速率相等。采用本发明实施例的技术方案,可以控制离子束刻蚀过程中的刻蚀速率,提高了刻蚀速率的可控性,从而提高了离子束刻蚀过程的可控性和灵活性。(The embodiment of the invention provides an ion beam etching rate control method, an ion beam etching method and a device, wherein the rate control method comprises the following steps: obtaining a target etching rate; substituting the target etching rate into the rate determination model to obtain the conditions required to be met by the process parameters; wherein the rate determination model is: the model takes the process parameters as independent variables and the etching rate as dependent variables, and the rate determination model is obtained by training the model to be trained through the characteristic parameters of the sample and the etching rate of the sample; and adjusting the value of the process parameter according to the condition required to be met by the process parameter, so that the actual etching rate obtained by etching according to the value of the process parameter is equal to the target etching rate. By adopting the technical scheme of the embodiment of the invention, the etching rate in the ion beam etching process can be controlled, and the controllability of the etching rate is improved, so that the controllability and the flexibility of the ion beam etching process are improved.)

1. An etching rate control method for ion beam etching is characterized by comprising the following steps:

obtaining a target etching rate;

substituting the target etching rate into a rate determination model to obtain a condition which needs to be met by a process parameter; wherein the rate determination model is: the model takes the process parameters as independent variables and the etching rate as dependent variables, and the rate determination model is obtained by training the model to be trained through the characteristic parameters of the sample and the etching rate of the sample;

and adjusting the value of the process parameter according to the condition required to be met by the process parameter, so that the actual etching rate obtained by etching according to the value of the process parameter is equal to the target etching rate.

2. The method of claim 1, wherein the training process of the rate determination model is:

determining a model to be trained;

obtaining sample data, wherein the sample data comprises: sample characteristic parameters and sample etching rates corresponding to the sample characteristic parameters;

substituting the sample data into the model to be trained to obtain the value of the model parameter of the model to be trained;

and taking the model to be trained with the determined values of the model parameters as a speed determination model.

3. The method of claim 1, wherein the process parameters comprise: ion beam energy, ion beam current, and ion beam incident angle.

4. The method of claim 3, wherein the determining the model to be trained comprises:

determining the relationship between the etching rate and each process parameter;

and determining the model to be trained according to the relation between the etching rate and each process parameter.

5. The method of claim 4, wherein determining the relationship between the etch rate and each process parameter comprises:

fixing the ion beam current and the ion beam incident angle, changing the ion beam energy, recording the etching rate obtained by etching with different ion beam energies, and obtaining the relation between the ion beam energy and the etching rate;

fixing the ion beam energy and the ion beam incident angle, changing the ion beam current, recording the etching rate obtained by etching with different ion beam currents, and obtaining the relation between the ion beam current and the etching rate;

fixing the ion beam energy and the ion beam current, changing the ion beam incident angle, recording the etching rate obtained by etching with different ion beam incident angles, and obtaining the relation between the ion beam incident angle and the etching rate;

correspondingly, the determining the model to be trained according to the relationship between the etching rate and each process parameter includes:

and determining a model to be trained according to the relation between the ion beam energy and the etching rate, the relation between the ion beam current and the etching rate, and the relation between the ion beam incident angle and the etching rate.

6. The method of claim 3, wherein the model to be trained is a multiple linear regression model.

7. The method of claim 6, wherein the multiple linear regression model is:

y＝θ₀+θ₁x₁+θ₂x₂+θ₃x₃+ε；

in the above formula, y represents an etching rate, θ₀、θ₁、θ₂、θ₃Respectively representing 4 parameters of the model, epsilon represents the influence of random factors in the experiment on y, and x₁、x₂、x₃Respectively representing ion beam energy, ion beam current and ion beam incident angle.

8. An ion beam etching method, comprising:

determining a target etching depth and a target etching rate;

determining etching time according to the target etching depth and the target etching rate;

controlling an actual etching rate in the etching process to be equal to the target etching rate by using the etching rate control method according to any one of claims 1 to 7;

and etching the element to be etched at the actual etching rate according to the etching time.

9. An etching rate control apparatus for ion beam etching, the apparatus comprising:

the rate acquisition unit is used for acquiring a target etching rate;

the condition determining unit is used for substituting the target etching rate into a rate determining model to obtain a condition which needs to be met by the process parameter; wherein the rate determination model is: the model takes the process parameters as independent variables and the etching rate as dependent variables, and the rate determination model is obtained by training the model to be trained through the characteristic parameters of the sample and the etching rate of the sample;

and the parameter value determining unit is used for adjusting the value of the process parameter according to the condition which needs to be met by the process parameter, so that the actual etching rate obtained by etching according to the value of the process parameter is equal to the target etching rate.

10. An ion beam etching apparatus, comprising:

the target determining unit is used for determining the target etching depth and the target etching rate;

the time determining unit is used for determining the etching time according to the target etching depth and the target etching rate;

a rate control unit for controlling an actual etching rate in an etching process to be equal to the target etching rate by using the etching rate control method according to any one of claims 1 to 7;

and the etching control unit is used for controlling the etching equipment to etch the element to be etched according to the etching time and the actual etching rate.

Technical Field

The invention relates to the technical field of ion beam etching, in particular to an ion beam etching rate control method, an ion beam etching method and an ion beam etching device.

Background

Ion beam etching is an etching technique which utilizes ions with certain energy to bombard the surface of an etched element so as to sputter atoms on the surface of an etched material, thereby achieving the purpose of etching. Ion beam etching is widely applied to the field of micro-machining because of the advantages of high image transfer precision, high etching efficiency, no limitation of etching materials and the like. In ion beam etching, the etching depth is determined by the etching rate and the etching time.

Because the controllability of the etching rate is poor due to more factors influencing the etching rate, in the prior art, the qualitative influence of the process parameters on the etching rate is usually analyzed.

However, by analyzing the qualitative influence of the process parameters on the etching rate, it is difficult to control the etching rate, so that the controllability and flexibility of ion beam etching are poor.

Disclosure of Invention

The embodiment of the invention aims to provide an etching rate control method for ion beam etching, an ion beam etching method and an ion beam etching device, so as to improve the controllability of the etching rate and further improve the controllability and flexibility of the ion beam etching. The specific technical scheme is as follows:

in a first aspect, an embodiment of the present invention provides an etching rate control method for ion beam etching, including:

obtaining a target etching rate;

substituting the target etching rate into a rate determination model to obtain a condition which needs to be met by a process parameter; wherein the rate determination model is: the model takes the process parameters as independent variables and the etching rate as dependent variables, and the rate determination model is obtained by training the model to be trained through the characteristic parameters of the sample and the etching rate of the sample;

and adjusting the value of the process parameter according to the condition required to be met by the process parameter, so that the actual etching rate obtained by etching according to the value of the process parameter is equal to the target etching rate.

Optionally, the training process of the rate determination model includes:

determining a model to be trained;

obtaining sample data, wherein the sample data comprises: sample characteristic parameters and sample etching rates corresponding to the sample characteristic parameters;

substituting the sample data into the model to be trained to obtain the value of the model parameter of the model to be trained;

and taking the model to be trained with the determined values of the model parameters as a speed determination model.

Optionally, the process parameters include: ion beam energy, ion beam current, and ion beam incident angle.

Optionally, the determining the model to be trained includes:

determining the relationship between the etching rate and each process parameter;

and determining the model to be trained according to the relation between the etching rate and each process parameter.

Optionally, the determining the relationship between the etching rate and each process parameter includes:

fixing the ion beam current and the ion beam incident angle, changing the ion beam energy, recording the etching rate obtained by etching with different ion beam energies, and obtaining the relation between the ion beam energy and the etching rate;

fixing the ion beam energy and the ion beam incident angle, changing the ion beam current, recording the etching rate obtained by etching with different ion beam currents, and obtaining the relation between the ion beam current and the etching rate;

fixing the ion beam energy and the ion beam current, changing the ion beam incident angle, recording the etching rate obtained by etching with different ion beam incident angles, and obtaining the relation between the ion beam incident angle and the etching rate;

correspondingly, the determining the model to be trained according to the relationship between the etching rate and each process parameter includes:

and determining a model to be trained according to the relation between the ion beam energy and the etching rate, the relation between the ion beam current and the etching rate, and the relation between the ion beam incident angle and the etching rate.

Optionally, the model to be trained is a multiple linear regression model.

Optionally, the multiple linear regression model is:

y＝θ₀+θ₁x₁+θ₂x₂+θ₃x₃+ε；

in the above formula, y represents an etching rate, θ₀、θ₁、θ₂、θ₃Respectively representing 4 parameters of the model, epsilon represents the influence of random factors in the experiment on y, and x₁、x₂、x₃Respectively representing ion beam energy, ion beam current and ion beam incident angle.

In a second aspect, an embodiment of the present invention further provides an ion beam etching method, including:

determining a target etching depth and a target etching rate;

determining etching time according to the target etching depth and the target etching rate;

controlling the actual etching rate to be equal to the target etching rate in the etching process by using the etching rate control method of any one of the first aspect;

and etching the element to be etched at the actual etching rate according to the etching time.

In a third aspect, an embodiment of the present invention further provides an apparatus for controlling an etching rate in ion beam etching, where the apparatus includes:

the rate acquisition unit is used for acquiring a target etching rate;

the condition determining unit is used for substituting the target etching rate into a rate determining model to obtain a condition which needs to be met by the process parameter; wherein the rate determination model is: the model takes the process parameters as independent variables and the etching rate as dependent variables, and the rate determination model is obtained by training the model to be trained through the characteristic parameters of the sample and the etching rate of the sample;

and the parameter value determining unit is used for adjusting the value of the process parameter according to the condition which needs to be met by the process parameter, so that the actual etching rate obtained by etching according to the value of the process parameter is equal to the target etching rate.

In a fourth aspect, an embodiment of the present invention further provides an ion beam etching apparatus, where the apparatus includes:

the target determining unit is used for determining the target etching depth and the target etching rate;

the time determining unit is used for determining the etching time according to the target etching depth and the target etching rate;

a rate control unit, configured to control an actual etching rate in an etching process to be equal to the target etching rate by using the etching rate control method according to any one of the first aspect;

and the etching control unit is used for controlling the etching equipment to etch the element to be etched according to the etching time and the actual etching rate.

The embodiment of the invention provides an etching rate control method of ion beam etching, which can obtain the conditions required to be met by the process parameters through a rate determination model, adjust each process parameter according to the conditions required to be met by the process parameters, and enable the actual etching rate to be equal to the target etching rate, so that the actual etching rate in the ion beam etching process can be controlled to be equal to the target etching rate, the controllability of the etching rate is improved, when the expected etching depth is required to be obtained, not only the etching time can be controlled, but also the etching rate can be controlled, and the controllability and the flexibility of the ion beam etching process are improved.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.

Fig. 1 is a schematic flow chart of a method for controlling an etching rate of ion beam etching according to an embodiment of the present invention;

FIG. 2 is a schematic flow chart of a method for training a medium rate determination model according to an embodiment of the present invention;

fig. 3 is a schematic structural diagram of an etching rate control apparatus for ion beam etching according to an embodiment of the present invention;

fig. 4 is a schematic structural diagram of an electronic device according to an embodiment of the present invention;

fig. 5 is another schematic structural diagram of an electronic device according to an embodiment of the present invention.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

In order to improve controllability of an etching rate and further improve controllability and flexibility of ion beam etching, the embodiment of the invention provides an etching rate control method of ion beam etching, an ion beam etching method and an ion beam etching device.

First, the method for controlling the etching rate of ion beam etching according to the embodiment of the present invention will be described.

It should be noted that the method for controlling the etching rate of ion beam etching provided by the embodiment of the present invention can be applied to the ion beam etching industry.

The execution main body of the method for controlling the etching rate of the ion beam etching provided by the embodiment of the invention can be electronic equipment, and the electronic equipment can be equipment such as a controller, a desktop computer, a notebook computer, a mobile terminal and the like, and can also be other electronic equipment.

Fig. 1 is a schematic flow chart of a method for controlling an etching rate of ion beam etching according to an embodiment of the present invention, that is, a schematic flow chart of a method for controlling an ion beam etching rate based on a model according to an embodiment of the present invention. As shown in fig. 1, the method for controlling an etching rate of ion beam etching according to an embodiment of the present invention includes the following steps:

s110: and acquiring a target etching rate.

In the embodiment of the invention, the operator can input the target etching rate into the electronic equipment, so that the electronic equipment can obtain the target etching rate input by the operator. The electronic device may also select an etching rate corresponding to the material of the element to be etched from a preset rate comparison table as a target etching rate, where the preset rate comparison table includes a corresponding relationship between the material of the element to be etched and the etching rate.

S120: and substituting the target etching rate into the rate determination model to obtain the conditions required to be met by the process parameters.

Wherein the rate determination model is: the model takes the process parameters as independent variables and the etching rate as dependent variables, and the rate determination model is obtained by training the model to be trained through the characteristic parameters of the sample and the etching rate of the sample.

In the embodiment of the present invention, the process parameter may include one parameter or may include a plurality of parameters.

In one embodiment, the process parameters may include ion beam energy, ion beam current, and ion beam incident angle, in order to achieve better controllability and wider achievable range of the etching rate. When the process parameter only comprises one parameter, the target etching rate can not be obtained sometimes by only adjusting one parameter, so that the controllability of the etching rate is poor, the reachable range is small, and the etching efficiency and the controllability of the etching are poor. In this embodiment, when the process parameter includes a plurality of parameters, the target etching rate can be achieved by adjusting the plurality of parameters, so that the probability of obtaining the target etching rate is higher, and the controllability of the etching rate is better and the achievable range is wider.

S130: and adjusting the value of the process parameter according to the condition required to be met by the process parameter, so that the actual etching rate obtained by etching according to the value of the process parameter is equal to the target etching rate.

The method for controlling the etching rate of the ion beam etching can obtain the conditions which need to be met by the process parameters through the rate determining model, adjust the process parameters according to the conditions which need to be met by the process parameters, and enable the actual etching rate to be equal to the target etching rate, so that the actual etching rate in the ion beam etching process can be controlled to be equal to the target etching rate, the controllability of the etching rate is improved, when the expected etching depth is required to be obtained, the etching time can be controlled, the etching rate can be controlled, and the controllability and the flexibility of the ion beam etching process are improved.

In one embodiment, as shown in fig. 2, the training process of the rate determination model may include the following steps S210 to S240:

s210: and determining a model to be trained.

In one embodiment, the electronic device may determine the model to be trained according to the following steps S211 to S212:

s211: and determining the relation between the etching rate and each process parameter.

S212: and determining the model to be trained according to the relation between the etching rate and each process parameter.

The model to be trained is determined according to the relation between the etching rate and each process parameter, so that the model to be trained can be determined more pertinently and more quickly.

In other embodiments, a person skilled in the art may also determine the model to be trained according to a priori knowledge, or determine the model to be trained according to other ways, which is not particularly limited in the embodiments of the present invention.

In one embodiment, when the process parameters include: when the ion beam energy, the ion beam current, and the ion beam incident angle are determined, the step S211 may be implemented as the following steps S2111 to S2113:

s2111: the ion beam current and the ion beam incident angle are fixed and unchanged, the ion beam energy is changed, and the etching rate obtained by etching with different ion beam energies is recorded to obtain the relation between the ion beam energy and the etching rate.

Step S2111 may change the ion beam energy within a predetermined energy range, for example, a predetermined energy range [100eV, 1200eV ], where eV is a unit of energy and represents electron volts, and specifically, a plurality of discrete ion beam energy values may be acquired from the range [100eV, 1200eV ] at intervals of 100eV when changing the ion beam energy. One skilled in the art can select other ranges as the predetermined energy range to change the ion beam energy in other ways.

In one embodiment, after the relationship between the ion beam energy and the etching rate is obtained, a relationship diagram between the ion beam energy and the etching rate can be made, so that the relationship between the ion beam energy and the etching rate can be observed more intuitively.

S2112: the ion beam energy and the ion beam incident angle are fixed, the ion beam current is changed, the etching rate obtained by etching with different ion beam currents is recorded, and the relation between the ion beam current and the etching rate is obtained.

Step S2112 may change the ion beam current within a preset current range when changing the ion beam current, where mA may be, for example, [15mA, 35mA ], where mA is a unit of current and represents milliampere, and specifically, when changing the ion beam current, a plurality of discrete ion beam current values may be obtained from the range of [15mA, 35mA ] at intervals of 5 mA. One skilled in the art can select other ranges as the preset current range to change the ion beam current in other ways.

In one embodiment, after the relationship between the ion beam current and the etching rate is obtained, a relationship diagram between the ion beam current and the etching rate can be made, so that the relationship between the ion beam current and the etching rate can be observed more intuitively.

S2113: the ion beam energy and the ion beam current are fixed, the ion beam incident angle is changed, the etching rate obtained by etching at different ion beam incident angles is recorded, and the relation between the ion beam incident angle and the etching rate is obtained.

Step S2113 may change the ion beam incident angle within a predetermined angle range, for example, the predetermined angle range may be [0 °, 80 ° ], and specifically, when changing the ion beam incident angle, a plurality of discrete ion beam incident angles may be obtained from the range of [0 °, 80 ° ] at intervals of 5 °. One skilled in the art can select other ranges as the predetermined angle range to change the incident angle of the ion beam in other ways.

In one embodiment, after the relationship between the ion beam incident angle and the etching rate is obtained, a relationship diagram between the ion beam incident angle and the etching rate can be made, so that the relationship between the ion beam incident angle and the etching rate can be observed more intuitively.

Accordingly, the step S212 can be implemented as the following step S2121:

s2121: and determining a model to be trained according to the relation between the ion beam energy and the etching rate, the relation between the ion beam current and the etching rate and the relation between the ion beam incident angle and the etching rate.

The embodiment determines the relation between each process parameter and the etching rate by controlling the variable method, so that the relation between each process parameter and the etching rate can be obtained more conveniently.

In the embodiment of the present invention, the relationship between the ion beam energy and the etching rate, the relationship between the ion beam current and the etching rate, and the relationship between the ion beam incident angle and the etching rate, which are determined in steps S2111 to S2113, are all linear relationships, so that, in an embodiment, when the process parameters include: the model to be trained can be a multiple linear regression model when the ion beam energy, the ion beam current and the ion beam incidence angle are measured.

The multiple linear regression model may specifically be:

y＝θ₀+θ₁x₁+θ₂x₂+θ₃x₃+ε

in the above formula, y represents an etching rate, θ₀、θ₁、θ₂、θ₃Respectively representing 4 parameters of the model, epsilon represents the influence of random factors in the experiment on y, and x₁、x₂、x₃Respectively representing ion beam energy, ion beam current and ion beam incident angle.

In the embodiment of the present invention, when the process parameter is other parameters, a person skilled in the art may also determine other models as the model to be trained according to the specific relationship between the process parameter and the etching rate, and the embodiment of the present invention does not limit the specific form of the model to be trained.

S220: obtaining sample data, the sample data comprising: the sample etching rate is corresponding to the sample characteristic parameter.

In an embodiment of the present invention, a set of sample data includes a set of sample characteristic parameters and a sample etch rate corresponding to the set of sample characteristic parameters.

In the embodiment of the present invention, sample data may be obtained through experiments. In order to make the determined rate determination model more accurate, multiple sets of sample data may be acquired. The more sample data, the more accurate the trained rate determination model. When sample data is obtained through experiments, the characteristic parameters of each sample can be valued in a certain range, so that the etching rate of the sample is obtained. The method for obtaining the sample etching rate can be as follows: measuring the etching depth of the sample by using a Taylor white light interference surface profiler Taylor SurfCCI2000 and adopting a non-contact surface measurement method, recording the etching time of the sample in the etching process, and taking the quotient of the etching depth of the sample and the etching time of the sample as the etching rate of the sample.

S230: and substituting the sample characteristic parameters and the sample etching rate into the model to be trained to obtain the value of the model parameters of the model to be trained.

S240: the model to be trained for which the values of the model parameters are determined is taken as the rate determination model.

In one embodiment, n experiments may be performed to obtain n sets of sample data, when the process parameters include: the sample obtained when the ion beam energy, the ion beam current and the ion beam incident angle are three parameters

The data can be represented as: (y)_i，x_i1，x_i2，x_i3)，i＝1，2，......，n

In the above formula, y_iRepresenting the sample etch rate, x, in the ith set of sample data_i1、x_i2、x_i3And respectively representing the values of the ion beam energy, the ion beam current and the ion beam incident angle in the ith group of sample data.

Will y_i、x_i1、x_i2、x_i3Substituting the multiple linear regression model to obtain a parameter solving formula:

y_i＝θ₀+θ₁x_i1+θ₂x_i2+θ₃x_i3+ε_i

in the above formula, θ₀、θ₁、θ₂、θ₃Is 4 parameters to be estimated, ε_iIs the random factor in the i-th experiment to y_iInfluence of (a) epsilon_iIndependently and identically distributed, i.e.

For the convenience of understanding and operation, the above parameter solving formula can be expressed by a matrix: y is represented by X θ + ∈. In the above-mentioned matrix expression,

in the above matrix expression, y is an n-dimensional column vector, y_iStoring the etching rate of the ith experiment; x is a matrix of n X (3+1), each row except the first column, whichThe ion beam energy, the ion beam current and the ion beam incident angle of the ith experiment are sequentially stored in the remaining three rows; theta is a 4-dimensional column vector and stores model parameters; ε is an n-dimensional column vector, ε_iThe random error for the ith experiment was stored.

In the embodiment of the invention, how to obtain the values of the model parameters of the model to be trained, namely how to solve the parameter matrix theta.

In one embodiment, the parameter matrix θ may be solved by minimizing the sum of the squares of the predicted and actual etch rate differences. In this way, the parameter matrix θ can be solved using a least squares method, i.e., a least squares method is used to obtain values of the model parameters of the model to be trained.

When the least square method is used to solve the parameter matrix θ, the sum of squared errors function may be constructed:

wherein Q is the square sum of the difference between the predicted value and the actual value of the etching rate. Sample data y from the i-th experiment_i、x_i1、x_i2、x_i3Are all known, therefore, θ can be solved for₀、θ₁、θ₂、θ₃。

θ can be solved by minimizing Q, making each partial derivative of Q0₀、θ₁、θ₂、θ₃。

Solving for theta₀、θ₁、θ₂、θ₃The process of (2) may specifically be:

q to theta₀Performing a partial derivation, and making the partial derivation 0 to obtain a first equation:

q to theta₁Calculating the partial derivative, and making the partial derivative be 0 to obtain a second equation:

q to theta₂And calculating the partial derivative, and making the partial derivative be 0 to obtain a third equation:

q to theta₃And calculating the partial derivative, and enabling the partial derivative to be 0 to obtain a fourth equation:

carrying out normal transformation on the first equation, the second equation, the third equation and the fourth equation to obtain an equation system:

since the numerical operation is converted into the matrix operation, the solution is easier, and therefore, the equation set can be expressed in the form of a matrix as follows:

X^TXθ＝X^Ty

since XTX is invertible, the estimate of θ is:

so that theta can be obtained₀、θ₁、θ₂、θ₃And a linear regression model is obtained.

The embodiment of the invention also provides an ion beam etching method, which comprises the following steps S301-S304:

s301: and determining the target etching depth and the target etching rate.

S302: and determining the etching time according to the target etching depth and the target etching rate.

In the embodiment of the invention, the quotient of the target etching depth and the target etching rate can be used as the etching time.

S303: by using any one of the etching rate control methods, the actual etching rate in the etching process is controlled to be equal to the target etching rate.

S304: and etching the element to be etched at the actual etching rate according to the etching time.

In the embodiment of the invention, the electronic equipment can control the etching equipment to etch the element to be etched at the actual etching rate according to the etching time.

According to the ion beam etching method provided by the embodiment of the invention, the conditions required to be met by the process parameters can be obtained through the rate determination model, and the process parameters are adjusted according to the conditions required to be met by the process parameters, so that the actual etching rate is equal to the target etching rate, the actual etching rate in the ion beam etching process can be controlled to be equal to the target etching rate, the controllability of the etching rate is improved, when the expected etching depth is required to be obtained, the etching time can be controlled, the etching rate can be controlled, and the controllability and the flexibility of the ion beam etching process are improved.

Corresponding to the etching rate control method of the ion beam etching, the embodiment of the invention also provides an etching rate control device of the ion beam etching. Fig. 3 is a schematic structural diagram of an ion beam etching rate control apparatus according to an embodiment of the present invention, that is, a schematic flow chart of the ion beam etching rate control apparatus according to the embodiment of the present invention. As shown in fig. 3, an etching rate control apparatus for ion beam etching according to an embodiment of the present invention includes:

a rate obtaining unit 310, configured to obtain a target etching rate;

a condition determining unit 320, configured to substitute the target etching rate into a rate determining model to obtain a condition that a process parameter needs to meet; wherein the rate determination model is: the model takes the process parameters as independent variables and the etching rate as dependent variables, and the rate determination model is obtained by training the model to be trained through the characteristic parameters of the sample and the etching rate of the sample;

a parameter value determining unit 330, configured to adjust a value of the process parameter according to a condition that the process parameter needs to meet, so that an actual etching rate obtained by etching according to the value of the process parameter is equal to the target etching rate.

The etching rate control device for ion beam etching provided by the embodiment of the invention can obtain the conditions required to be met by the process parameters through the rate determination model, and adjust each process parameter according to the conditions required to be met by the process parameters, so that the actual etching rate is equal to the target etching rate, the actual etching rate in the ion beam etching process can be controlled to be equal to the target etching rate, the controllability of the etching rate is improved, when the expected etching depth is required to be obtained, not only the etching time can be controlled, but also the etching rate can be controlled, and the controllability and the flexibility of the ion beam etching process are improved.

In one embodiment, the apparatus may further include:

the first model determining unit is used for determining a model to be trained;

a sample obtaining unit, configured to obtain sample data, where the sample data includes: sample characteristic parameters and sample etching rates corresponding to the sample characteristic parameters;

the parameter value determining unit is used for substituting the sample data into the model to be trained to obtain the value of the model parameter of the model to be trained;

and the second model determining unit is used for taking the model to be trained with the determined values of the model parameters as a rate determining model.

In one embodiment, the process parameters may include: ion beam energy, ion beam current, and ion beam incident angle.

In one embodiment, the first model determination unit comprises:

the relation determining subunit is used for determining the relation between the etching rate and each process parameter; and the model determining subunit is used for determining the model to be trained according to the relationship between the etching rate and each process parameter.

In one embodiment, the relationship determination subunit includes:

the first relation determining module is used for fixing the ion beam current and the ion beam incident angle, changing the ion beam energy, recording the etching rate obtained by etching with different ion beam energies, and obtaining the relation between the ion beam energy and the etching rate;

the second relation determining module is used for fixing the ion beam energy and the ion beam incident angle, changing the ion beam current, recording the etching rate obtained by etching with different ion beam currents, and obtaining the relation between the ion beam current and the etching rate;

the third relation determining module is used for fixing the ion beam energy and the ion beam current, changing the ion beam incident angle, recording the etching rate obtained by etching at different ion beam incident angles, and obtaining the relation between the ion beam incident angle and the etching rate;

correspondingly, the model determination subunit is specifically configured to: and determining a model to be trained according to the relation between the ion beam energy and the etching rate, the relation between the ion beam current and the etching rate, and the relation between the ion beam incident angle and the etching rate.

In one embodiment, the model to be trained is a multiple linear regression model.

In one embodiment, the multiple linear regression model is:

y＝θ₀+θ₁x₁+θ₂x₂+θ₃x₃+ε；

in the above formula, y represents an etching rate, θ₀、θ₁、θ₂、θ₃Respectively representing 4 parameters of the model, epsilon represents the influence of random factors in the experiment on y, and x₁、x₂、x₃Respectively representing ion beam energy, ion beam current and ion beam incident angle.

Corresponding to the ion beam etching method, the embodiment of the invention also provides an ion beam etching device. The ion beam etching device provided by the embodiment of the invention comprises:

the target determining unit is used for determining the target etching depth and the target etching rate;

the time determining unit is used for determining the etching time according to the target etching depth and the target etching rate;

a rate control unit, which is used for controlling the actual etching rate in the etching process to be equal to the target etching rate by using the etching rate control method of ion beam etching;

and the etching control unit is used for controlling the etching equipment to etch the element to be etched according to the etching time and the actual etching rate.

The ion beam etching device provided by the embodiment of the invention can obtain the conditions required to be met by the process parameters through the rate determination model, and adjust each process parameter according to the conditions required to be met by the process parameters, so that the actual etching rate is equal to the target etching rate, the actual etching rate in the ion beam etching process can be controlled to be equal to the target etching rate, the controllability of the etching rate is improved, when the expected etching depth is required to be obtained, the etching time can be controlled, the etching rate can be controlled, and the controllability and the flexibility of the ion beam etching process are improved.

An embodiment of the present invention further provides an electronic device, as shown in fig. 4, including a processor 401, a communication interface 402, a memory 403, and a communication bus 404, where the processor 401, the communication interface 402, and the memory 403 complete mutual communication through the communication bus 404,

a memory 403 for storing a computer program;

the processor 401 is configured to implement any one of the above-described methods for controlling an etching rate of ion beam etching when executing the program stored in the memory 403.

An embodiment of the present invention further provides an electronic device, as shown in fig. 5, including a processor 501, a communication interface 502, a memory 503 and a communication bus 504, where the processor 501, the communication interface 502 and the memory 503 complete mutual communication through the communication bus 504,

a memory 503 for storing a computer program;

the processor 501 is configured to implement any one of the ion beam etching methods described above when executing the program stored in the memory 503.

The communication bus mentioned in the above electronic device may be a Peripheral Component Interconnect (PCI) bus, an Extended Industry Standard Architecture (EISA) bus, or the like. The communication bus may be divided into an address bus, a data bus, a control bus, etc. For ease of illustration, only one thick line is shown, but this does not mean that there is only one bus or one type of bus.

The communication interface is used for communication between the electronic equipment and other equipment.

The Memory may include a Random Access Memory (RAM) or a Non-Volatile Memory (NVM), such as at least one disk Memory. Optionally, the memory may also be at least one memory device located remotely from the processor.

The Processor may be a general-purpose Processor, including a Central Processing Unit (CPU), a Network Processor (NP), and the like; but may also be a Digital Signal Processor (DSP), an Application Specific Integrated Circuit (ASIC), a Field Programmable Gate Array (FPGA) or other Programmable logic device, discrete Gate or transistor logic device, discrete hardware component.

The embodiment of the invention provides a computer-readable storage medium, wherein a computer program is stored in the storage medium, and when the computer program is executed by a processor, the etching rate control method for ion beam etching is realized.

An embodiment of the present invention provides a computer-readable storage medium, in which a computer program is stored, and the computer program, when executed by a processor, implements any one of the ion beam etching methods described above.

Embodiments of the present invention also provide a computer program product containing instructions, which when run on a computer, cause the computer to execute any one of the above methods for controlling an etching rate of ion beam etching.

Embodiments of the present invention also provide a computer program product containing instructions which, when run on a computer, cause the computer to perform any of the ion beam etching methods described above.

For the apparatus/electronic device/storage medium/program product embodiment, since it is substantially similar to the method embodiment, the description is relatively simple, and for the relevant points, reference may be made to the partial description of the method embodiment. It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.

All the embodiments in the present specification are described in a related manner, and the same and similar parts among the embodiments may be referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, as for the apparatus/electronic device/storage medium embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant points can be referred to the partial description of the method embodiment.

The above description is only for the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention shall fall within the protection scope of the present invention.