阅读说明：本技术 一种空气光导塑闪探测器的导光层及其制作方法 (Light guide layer of air light guide plastic flash detector and manufacturing method thereof ) 是由 姚飞 张锐 蒋伟 李进 侯鑫 甘霖 曹舟 于 2019-12-05 设计创作，主要内容包括：本发明公开了一种空气光导塑闪探测器的导光层及其制作方法,本发明涉及大面积辐射探测器领域,本发明按照探测器的闪烁片表面各点光收集效率归一化因子,采用UV光刻技术改变特氟龙薄膜基材光路特性,在氟龙薄膜每个区域通过采用固定光刻时间,通过区域的重叠,在特氟龙膜的不同位置上形成不同的透射、反射比；采用导光层后,使现有空气光导塑闪探测器的远距离点光搜集效率增加,同时近距离点的过饱和光搜集效率降低,最终达到各点光收集效率一致,通过本发明使面积350mm*150mm的探测器的均匀性偏差从±80％减小到±15％和±25％,同时保持对射线整体探测效率不变；导光层制作通过机器光刻实现,制作方法自动化程度高,一致性好,满足批量生产要求。(The invention discloses a light guide layer of an air light guide plastic flash detector and a manufacturing method thereof, and relates to the field of large-area radiation detectors, wherein the light guide layer adopts a UV (ultraviolet) photoetching technology to change the light path characteristic of a Teflon film substrate according to light collection efficiency normalization factors of all points on the surface of a scintillation sheet of the detector, and different transmission and reflection ratios are formed at different positions of the Teflon film by adopting fixed photoetching time and overlapping the areas in each area of the Teflon film; after the light guide layer is adopted, the long-distance point light collection efficiency of the existing air light guide plastic flash detector is increased, meanwhile, the oversaturated light collection efficiency of a short-distance point is reduced, and finally the light collection efficiency of each point is consistent, so that the uniformity deviation of the detector with the area of 350mm plus or minus 150mm is reduced to plus or minus 15 percent and plus or minus 25 percent from plus or minus 80 percent, and meanwhile, the integral detection efficiency of rays is kept unchanged; the light guide layer is manufactured by machine photoetching, the manufacturing method is high in automation degree and good in consistency, and the requirement of batch production is met.)

1. The utility model provides an air light guide moulds leaded light layer of sudden strain of a muscle detector which characterized in that: the light guide layer is provided with a first light guide area (1), a second light guide area (2), a third light guide area (3), a fourth light guide area (4) and a fifth light guide area (5), the second light guide area (2) is positioned in the first light guide area (1), the third light guide area (3) is positioned in the second light guide area (2), the fourth light guide area (4) is positioned in the third light guide area (3), and the fifth light guide area (5) is overlapped with the fourth light guide area (4).

2. The light guide layer of an air guide detector according to claim 1, wherein: the first light guide area (1) is a rectangular area, the size of the first light guide area (1) is 142.5mm in bottom side length and 150mm in side width, a notch (5) is arranged in the middle of the bottom side of the first light guide area, the size of the notch (5) is 47.5mm in length, and the size of the notch is 21.5mm in width.

3. The light guide layer of an air guide detector according to claim 2, wherein: the second light guide region (2) is a rectangular region, the size of the second light guide region (2) is 142.5mm on the bottom side and 107mm on the side width, and the bottom side of the second light guide region (2) is overlapped with the upper side of the notch (5) arranged on the first light guide region (1).

4. The light guide layer of an air guide detector according to claim 1, wherein: the third light guide region (3) is a rectangular region, the size of the third light guide region (3) is 95mm on the bottom side and 43mm on the side, and the bottom side of the third light guide region (3) is 43mm away from the bottom side of the first light guide region (1) and is arranged in a bilateral symmetry mode.

5. The light guide layer of an air guide detector according to claim 1, wherein: the fourth light guiding region (4) is a rectangular region, the size of the fourth light guiding region (4) is 47.5mm on the bottom side and 43mm on the side, and the fourth light guiding region (4) is positioned in the middle of the third light guiding region (3).

6. The light guide layer of an air guide detector according to claim 1, wherein: the light guide layer is a Teflon light guide layer.

7. The light guide layer of an air guide detector according to claim 1, wherein: the transmittance of the region of the first light guide region (1) except for the second light guide region (2) is 60%, and the reflectance thereof is 36%; the transmittance of the region outside the third light guiding region (3) in the second light guiding region (2) is 40% and the reflectance thereof is 47%; the transmittance of the region of the third light guiding region (3) other than the fourth light guiding region (4) is 24% and the reflectance thereof is 51%; the fifth light guide region (5) has a transmittance of 8.6% and a reflectance of 57%.

8. A method for manufacturing the light guide layer of the air light guide detector according to any one of claims 1 to 7, wherein the method comprises the following steps:

s1, photoetching a first light guide region (1) on the Teflon film according to the size;

s2, after the first light guide region (1) is finished, starting photoetching at the second light guide region (2);

s3, after the second light guide region (2) is finished, starting photoetching at a third light guide region (3);

s4, after the third light guide region (3) is finished, starting photoetching at a fourth light guide region (4);

after completion of the step S5 and the fourth light guiding region (4), photolithography is started in the fifth light guiding region (5).

9. The method for manufacturing the light guide layer of the air light guide detector according to claim 8, wherein: the steps S1, S2, S3, S4 and S5 are performed with the same lithography intensity and time to form a fixed transmittance.

Technical Field

The invention relates to the field of large-area radiation detectors, in particular to a light guide layer of an air light guide plastic flash detector and a manufacturing method thereof.

Background

The large-area plastic flash detector is a new type of radiation detector developed in recent years, and has the main characteristics of high detection efficiency, fast response time (<10ns), strong output signal, easy large detection area, strong environmental adaptability and light weight, the basic working principle of the detector is that when a plastic flash sheet of the detector is subjected to ionizing radiation, scintillator atoms or molecules of the plastic flash sheet are excited to generate fluorescence, the fluorescence is converted into visible light through shifting waves, photons generated on the large-area plastic flash sheet are emitted to a photosensitive layer of a photoelectric conversion device as much as possible by using light guide, reflector and other light collecting components, the photosensitive layer is excited to emit photoelectrons, and the photoelectrons are multiplied and then collected by an output stage to form electric pulses for subsequent circuit collection, analysis and recording.

Disclosure of Invention

The invention aims to overcome the defect of large difference of light collection efficiency of each point in the prior art and provides a light guide layer of an air light guide plastic flash detector and a manufacturing method thereof.

The purpose of the invention is realized by the following technical scheme: a first light guide area, a second light guide area, a third light guide area, a fourth light guide area and a fifth light guide area are arranged on the light guide layer, the second light guide area is located in the first light guide area, the third light guide area is located in the second light guide area, the fourth light guide area is located in the third light guide area, and the fifth light guide area is overlapped with the fourth light guide area.

The principle of the invention is as follows: according to light collection efficiency normalization factors of all points on the surface of a scintillation piece of a detector, the light path characteristics of a Teflon film substrate are changed by adopting a UV photoetching technology, and different transmission and reflection ratios are formed at different positions of the Teflon film by adopting fixed photoetching time and overlapping the areas in each area of the Teflon film; after adopting the leaded light layer, make the long-distance some light collection efficiency of present air light guide plastic flash detector increase, the supersaturation light collection efficiency of closely some reduces simultaneously, finally reaches that each point light collection efficiency is unanimous.

Specifically, the first light guide region has a bottom side length of 142.5mm and a side width of 150mm, a notch is formed in the middle of the bottom side, and the notch has a length of 47.5mm and a width of 21.5 mm.

Specifically, the dimensions of the second light guiding region are 142.5mm in bottom side length and 107mm in side width, and the bottom side of the second light guiding region overlaps with the upper side of the notch provided in the first light guiding region.

Specifically, the dimensions of the third light guiding region are 95mm on the bottom and 43mm wide on the side, and the bottom of the third light guiding region is 43mm away from the bottom of the first light guiding region and is arranged symmetrically.

Specifically, the fourth light guide region has a bottom side length of 47.5mm and a side width of 43mm, and is located in the middle of the third light guide region.

Specifically, the first light guiding region, the second light guiding region, the third light guiding region, the fourth light guiding region, and the fifth light guiding region are all rectangular regions.

Specifically, the light guide layer is a teflon light guide layer.

Specifically, the light transmittance of the non-photoetching Teflon film is 92%, and the reflectivity is 5%; after photoetching, the transmissivity of the area, which is positioned outside the second light guide area, in the first light guide area is 60%, and the reflectivity is 36%; the transmissivity of the area, which is positioned outside the third light guide area, in the second light guide area is 40%, and the reflectivity is 47%; the transmissivity of the region, which is positioned outside the fourth light guide region, in the third light guide region is 24%, and the reflectivity is 51%; the fifth light guide region has a transmittance of 8.6% and a reflectance of 57%.

The invention also provides a manufacturing method of the light guide layer of the air light guide detector, which comprises the following steps:

s1, photoetching a first light guide region on the Teflon film according to the size;

s2, after the first light guide area is finished, photoetching is started in the second light guide area;

s3, after the second light guide area is finished, photoetching is started in the third light guide area;

and S4, after the third light guide area is finished, starting photoetching in the fourth light guide area.

And S5, after the fourth light guide area is finished, starting photoetching in the fifth light guide area.

Specifically, the steps S1, S2, S3, S4 and S5 are performed with the same lithography intensity and time to form a fixed transmittance.

The invention has the following advantages:

the invention adopts a special Teflon light guide film to increase the collection efficiency of a long-distance light spot and simultaneously reduce the collection efficiency of supersaturated light at a short-distance point, and the uniformity deviation of a detector with the area of 350mm x 150mm is reduced from +/-80 percent to +/-15 percent and +/-25 percent by the technology, and simultaneously the integral detection efficiency of rays is kept unchanged (respectively using phi 10mm light guide films)³⁶Cl and¹⁴c test).

In the manufacturing method, the light guide layer is manufactured by machine photoetching, the manufacturing method has high automation degree and good consistency, and the requirement of batch production is met.

Drawings

The accompanying drawings, which are included to provide a further understanding of the embodiments of the invention and are incorporated in and constitute a part of this application, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention;

FIG. 1 is a schematic structural diagram of a light guiding layer of an air light guide detector according to the present invention;

FIG. 2 is a schematic flow chart of a method for manufacturing a light guide layer of an air light guide detector according to the present invention;

in the figure: 1-a first light guiding region, 2-a second light guiding region, 3-a third light guiding region, 4-a fourth light guiding region, 5-a fifth light guiding region.

Detailed Description

In order that the above objects, features and advantages of the present invention can be more clearly understood, a more particular description of the invention will be rendered by reference to the appended drawings. It should be noted that the embodiments and features of the embodiments of the present application may be combined with each other without conflicting with each other.

In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, however, the present invention may be practiced in other ways than those specifically described and thus the scope of the present invention is not limited by the specific embodiments disclosed below.

It will be understood by those skilled in the art that in the present disclosure, the terms "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like are used in an orientation or positional relationship indicated in the drawings for ease of description and simplicity of description, and do not indicate or imply that the referenced devices or components must be constructed and operated in a particular orientation and thus are not to be considered limiting.

It is understood that the terms "a" and "an" should be interpreted as meaning that a number of one element or element is one in one embodiment, while a number of other elements is one in another embodiment, and the terms "a" and "an" should not be interpreted as limiting the number.

Referring to fig. 1, a light guiding layer of an air light guide detector is provided in an embodiment of the present invention, the light guiding layer is provided with a first light guiding region 1, a second light guiding region 2, a third light guiding region 3, a fourth light guiding region 4 and a fifth light guiding region 5, the second light guiding region 2 is located in the first light guiding region 1, the third light guiding region 3 is located in the second light guiding region 2, the fourth light guiding region 4 is located in the third light guiding region 3, and the fifth light guiding region 5 is overlapped with the fourth light guiding region 4.

In the embodiment of the present invention, the first light guiding region 1 has a bottom side length of 142.5mm and a side width of 150mm, a notch 5 is disposed in the middle of the bottom side, and the notch 5 has a length of 47.5mm and a width of 21.5 mm.

In the embodiment of the present invention, the dimensions of the second light guiding region 2 are 142.5mm in bottom side length and 107mm in side width, and the bottom side of the second light guiding region 2 overlaps with the upper side of the notch 5 provided in the first light guiding region 1.

In the embodiment of the present invention, the dimensions of the third light guiding region 3 are 95mm on the bottom and 43mm on the side, and the bottom of the third light guiding region 3 is 43mm away from the bottom of the first light guiding region 1 and is arranged symmetrically.

In the embodiment of the present invention, the fourth light guiding region 4 has a size with a bottom side of 47.5mm and a side width of 43mm, and the fourth light guiding region 4 is located in the middle of the third light guiding region 3.

In the embodiment of the present invention, the light guide layer is a teflon light guide layer.

In the embodiment of the present invention, the transmittance δ of the region outside the second light guiding region 2 in the first light guiding region 1 is set to be higher than the transmittance δ of the region outside the second light guiding region 2₁A reflectance σ of 60%₁36 percent; the transmittance δ of the region other than the third light guiding region 3 in the second light guiding region 2₂A reflectance σ of 40%₂Is 47%; the transmittance δ of the region of the third light guiding region 3 other than the fourth light guiding region 4₃A reflectivity of 24%σ₃Is 51 percent; a transmittance δ of the fifth light guiding region 5₄A reflectance σ of 8.6%₄The content was 57%.

According to the efficiency normalization factor of each point on the surface of the scintillator of the detector, the invention adopts the advanced photoetching technology to improve the light path characteristic of the Teflon film, increase the light refraction output efficiency of a specific angle, make up the low efficiency factor of small-angle light collection, simultaneously reduce the light output of a region close to the photomultiplier, reduce the sudden change of the light collection efficiency, reduce the uniformity deviation of the detector from +/-80% to +/-15% by the technology, and simultaneously keep the whole ray detection efficiency unchanged.

Referring to fig. 2, an embodiment of the present invention further provides a method for manufacturing a light guide layer of an air light guide detector, including the following steps:

s1, photoetching a first light guide region 1 on the Teflon film according to the size;

s2, after the first light guiding region 1 is completed, starting photolithography in the second light guiding region 2;

s3, after the second light guiding region 2 is completed, starting photolithography in the third light guiding region 3;

after the step S4 and the third light guiding region 3 are completed, starting photolithography in the fourth light guiding region 4;

after completion of S5 and the fourth light guiding region 4, photolithography is started in the fifth light guiding region 5.

While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including preferred embodiments and all such alterations and modifications as fall within the scope of the invention.

It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.