阅读说明：本技术 一种CZTSSe薄膜的制备方法 (Preparation method of CZTSSe film ) 是由 吉成龙 于 2018-08-29 设计创作，主要内容包括：本发明公开了薄膜制造领域内的一种CZTSSe薄膜的制备方法,包括以下步骤：(1)、将将通的卤化物和有机溶剂A进行搅拌得到溶液A；(2)、将硫化钠和有机溶剂B进行搅拌得到溶液B；(3)、溶液A和溶液B进行搅拌后得到硫化铜纳米颗粒；(4)、硫化铜纳米颗粒加入硫源和有机溶剂得到前驱体浆料；(5)、前驱体浆料和基地进行涂膜得到湿膜；(6)、湿膜经过干燥处理得到干膜；(7)、干膜经过硫化处理得到CZTS薄膜；(8)、CZTS薄膜进行硒化处理得到CZTSSe薄膜；湿膜经过干燥处理得到干膜；干膜经过硫化处理得到CZTS薄膜；CZTS薄膜进行硒化处理得到CZTSSe薄膜,可以使得CZTSSe薄膜制备工艺更加简单,制备难度降低,并且保证CZTSSe薄膜的品质的同时提高其产量,本发明可以用于CZTSSe薄膜的制备。(The invention discloses a preparation method of a CZTSSe film in the field of film manufacturing, which comprises the following steps: (1) stirring the introduced halide and the organic solvent A to obtain a solution A; (2) stirring sodium sulfide and an organic solvent B to obtain a solution B; (3) stirring the solution A and the solution B to obtain copper sulfide nano particles; (4) adding a sulfur source and an organic solvent into the copper sulfide nano particles to obtain precursor slurry; (5) coating the precursor slurry and the base to obtain a wet film; (6) drying the wet film to obtain a dry film; (7) vulcanizing the dry film to obtain a CZTS film; (8) carrying out selenization treatment on the CZTS film to obtain a CZTSSe film; drying the wet film to obtain a dry film; vulcanizing the dry film to obtain a CZTS film; the CZTSSe film is obtained by selenizing the CZTS film, so that the preparation process of the CZTSSe film is simpler, the preparation difficulty is reduced, the quality of the CZTSSe film is ensured, the yield of the CZTSSe film is improved, and the preparation method can be used for preparing the CZTSSe film.)

1. A preparation method of a CZTSSe thin film is characterized by comprising the following steps:

(1) stirring the introduced halide and the organic solvent A to obtain a solution A;

(2) stirring sodium sulfide and an organic solvent B to obtain a solution B;

(3) stirring the solution A and the solution B to obtain copper sulfide nano particles;

(4) adding a sulfur source and an organic solvent into the copper sulfide nano particles to obtain precursor slurry;

(5) coating the precursor slurry and the base to obtain a wet film;

(6) drying the wet film to obtain a dry film;

(7) vulcanizing the dry film to obtain a CZTS film;

(8) and selenizing the CZTS film to obtain the CZTSSe film.

2. The method for preparing a CZTSSe thin film according to claim 1, wherein: the solution A and the solution B are in an ice bath state when being stirred.

3. The method for preparing a CZTSSe thin film according to claim 2, wherein: the solution a and the solution B were stirred under a nitrogen atmosphere.

4. The method for preparing a CZTSSe thin film according to claim 3, wherein: the copper sulfide nanoparticles also require the addition of a zinc source.

5. The method for preparing a CZTSSe thin film according to claim 1, wherein: the copper sulfide nano-particles are added with a tin source and a germanium source.

6. The method for preparing a CZTSSe thin film according to claim 5, wherein: and carrying out ball milling on the copper sulfide nano particles, the tin source, the germanium source, the zinc source, the sulfur source and the organic solvent to obtain precursor slurry.

7. The method for preparing a CZTSSe thin film according to claim 1, wherein: and (5) repeatedly coating the dry film.

Technical Field

The invention relates to a preparation method of a CZTSSe thin film.

Background

In recent years, with the gradual depletion of non-renewable resources such as petroleum and coal, which are limited on the earth, the utilization and development of renewable energy sources are becoming more urgent. Among them, solar photovoltaic power generation has become the safest, most environmentally friendly and most potential competitor among renewable energy sources. The bottleneck restricting the development of the solar photovoltaic power generation industry at present is higher cost and lower conversion efficiency, and the thin film solar cell is the best choice in view of material and manufacturing cost. In the thin film solar cell, copper zinc tin sulfur selenium (CZTSSe) has a direct band gap (1.04-1.67 eV) which is very matched with the solar spectrum, the band gap can effectively adjust the sulfur-selenium ratio and the high absorption coefficient (105 cm < -1 >) of visible light, and noble metals and toxic elements are not contained, so that the copper zinc tin sulfur selenium (CZTSSe) becomes the most potential novel thin film solar cell absorption layer material. Through the development of 30 years, breakthrough is made on theoretical research and preparation process, and the laboratory efficiency is 12% breakthrough. In the preparation process of the CZTSSe semiconductor thin-film solar cell absorption layer, a precursor is prepared and then a sulfurization-selenization method becomes the mainstream of industrial production, wherein the sputtering preparation process of the precursor is mature, the control on the component proportion of the precursor and the control on the distribution uniformity can meet the process requirements, and the difficulty of the sulfurization-selenization method process after sputtering is that the sulfurization process requires high temperature uniformity, fast heating rate and strict reaction atmosphere. The high temperature uniformity ensures that the thermal deformation of the precursor and the substrate material is consistent in the heating process, so that the absorption layer is prevented from falling off, the generation of binary phases can be inhibited at a fast temperature rise rate, the volatilization of metal elements can be inhibited in a proper reaction atmosphere, and the stability of the components of the absorption layer is ensured.

Disclosure of Invention

The invention aims to provide a preparation method of a CZTSSe film, which can make the preparation process of the CZTSSe film simpler, reduce the preparation difficulty, ensure the quality of the CZTSSe film and improve the yield of the CZTSSe film.

In order to achieve the above object, the present invention provides a method for preparing a CZTSSe thin film, comprising the steps of: (1) stirring the introduced halide and the organic solvent A to obtain a solution A;

(2) stirring sodium sulfide and an organic solvent B to obtain a solution B;

(3) stirring the solution A and the solution B to obtain copper sulfide nano particles;

(4) adding a sulfur source and an organic solvent into the copper sulfide nano particles to obtain precursor slurry;

(5) coating the precursor slurry and the base to obtain a wet film;

(6) drying the wet film to obtain a dry film;

(7) vulcanizing the dry film to obtain a CZTS film;

(8) and selenizing the CZTS film to obtain the CZTSSe film.

Compared with the prior art, the method has the beneficial effects that the introduced halide and the organic solvent A are stirred to obtain a solution A; stirring sodium sulfide and an organic solvent B to obtain a solution B; stirring the solution A and the solution B to obtain copper sulfide nano particles; adding a sulfur source and an organic solvent into the copper sulfide nano particles to obtain precursor slurry; coating the precursor slurry and a base to obtain a wet film; drying the wet film to obtain a dry film; vulcanizing the dry film to obtain a CZTS film; the CZTSSe film is obtained by selenizing the CZTS film, so that the preparation process of the CZTSSe film is simpler, the preparation difficulty is reduced, the quality of the CZTSSe film is ensured, the yield of the CZTSSe film is improved, and the preparation method can be used for preparing the CZTSSe film.

As a further improvement of the invention, the solution A and the solution B are in an ice bath state when being stirred, so that the stirring effect is better.

As a further improvement of the invention, the solution A and the solution B are in a nitrogen atmosphere during stirring, so that the stirring effect is better.

As a further improvement of the invention, the copper sulfide nanoparticles also need to be added with a zinc source, so that the quality of the CZTSSe film can be better.

As a further improvement of the invention, a tin source and a germanium source are added into the copper sulfide nano particles, so that the CZTSSe film has better quality.

As a further improvement of the present invention, the copper sulfide nanoparticles are described. And the precursor slurry is obtained after ball milling of the tin source, the germanium source, the zinc source, the sulfur source and the organic solvent, and the CZTSSe film has better quality.

As a further improvement of the invention, the CZTSSe film has better quality when the dry film is subjected to repeated coating treatment.

Drawings

FIG. 1 is a flow chart of the present invention.

Detailed Description

The invention is further described below with reference to the accompanying drawings:

the preparation method of the CZTSSe thin film shown in figure 1 comprises the following steps: (1) stirring the introduced halide and the organic solvent A to obtain a solution A; (2) stirring sodium sulfide and an organic solvent B to obtain a solution B; (3) stirring the solution A and the solution B to obtain copper sulfide nano particles; (4) adding a sulfur source and an organic solvent into the copper sulfide nano particles to obtain precursor slurry; (5) coating the precursor slurry and the base to obtain a wet film; (6) drying the wet film to obtain a dry film; (7) vulcanizing the dry film to obtain a CZTS film; (8) carrying out selenization treatment on the CZTS film to obtain a CZTSSe film; the solution A and the solution B are in an ice bath state when being stirred; the solution A and the solution B are in a nitrogen atmosphere when being stirred; the copper sulfide nano particles also need to be added with a zinc source; a tin source and a germanium source are added into the copper sulfide nano particles; the copper sulfide nanoparticles. Carrying out ball milling on a tin source, a germanium source, a zinc source, a sulfur source and an organic solvent to obtain precursor slurry; and (5) repeatedly coating the dry film.

During working, the introduced halide and the organic solvent A are stirred to obtain a solution A; stirring sodium sulfide and an organic solvent B to obtain a solution B; stirring the solution A and the solution B to obtain copper sulfide nano particles; adding a sulfur source and an organic solvent into the copper sulfide nano particles to obtain precursor slurry; coating the precursor slurry and a base to obtain a wet film; drying the wet film to obtain a dry film; vulcanizing the dry film to obtain a CZTS film; the CZTSSe film is obtained by selenizing the CZTS film, so that the preparation process of the CZTSSe film is simpler, the preparation difficulty is reduced, the quality of the CZTSSe film is ensured, the yield of the CZTSSe film is improved, and the preparation method can be used for preparing the CZTSSe film.

The present invention is not limited to the above embodiments, and based on the technical solutions of the present disclosure, those skilled in the art can make some substitutions and modifications to some technical features without creative efforts according to the disclosed technical contents, and these substitutions and modifications are all within the protection scope of the present invention.