阅读说明：本技术 薄膜电容器及其制造方法 (Thin film capacitor and method for manufacturing the same ) 是由 香川武史 泉谷淳子 原田真臣 松原弘 石田宣博 于 2018-07-20 设计创作，主要内容包括：薄膜电容器(100)具备：下部电极(120)；介电膜(130)；上部电极(140)；第1保护膜(151),其分别形成有使上部电极(140)开口的第1贯通孔(CH11)和使下部电极(120)开口的第2贯通孔(CH12)且具有第1上表面(150A)；第2保护膜(152),其具有处于比第1保护膜151的第1上表面150A高的位置的第2上表面(150B)；第1端子电极(161),其通过第1贯通孔(CH11)而与上部电极(140)电连接,至少延伸至第2保护膜(152)的第2上表面(150B)地设置；以及第2端子电极(162),其通过第2贯通孔(CH12)而与下部电极(120)电连接,至少延伸至第2保护膜(152)的第2上表面(150B)地设置。(A film capacitor (100) is provided with: a lower electrode (120); a dielectric film (130); an upper electrode (140); a 1 st protective film (151) having a 1 st upper surface (150A) and formed with a 1 st through hole (CH11) for opening the upper electrode (140) and a 2 nd through hole (CH12) for opening the lower electrode (120), respectively; a 2 nd protective film (152) having a 2 nd upper surface (150B) at a position higher than the 1 st upper surface 150A of the 1 st protective film 151; a 1 st terminal electrode (161) electrically connected to the upper electrode (140) through the 1 st through hole (CH11) and provided so as to extend at least to the 2 nd upper surface (150B) of the 2 nd protective film (152); and a 2 nd terminal electrode (162) electrically connected to the lower electrode (120) through the 2 nd through hole (CH12) and provided so as to extend at least to the 2 nd upper surface (150B) of the 2 nd protective film (152).)

1. A film capacitor is characterized by comprising:

a lower electrode;

a dielectric film disposed over the lower electrode;

an upper electrode facing the lower electrode with the dielectric film interposed therebetween;

a 1 st protective film provided on the dielectric film and the upper electrode, having a 1 st through hole for opening the upper electrode and a 2 nd through hole for opening the lower electrode, and having a 1 st upper surface for defining a height of each of the 1 st through hole and the 2 nd through hole;

a 2 nd protective film which is provided in a part of a region seen in a 1 st upper surface of the 1 st protective film in a plan view and has a 2 nd upper surface at a position higher than the 1 st upper surface of the 1 st protective film;

a 1 st terminal electrode electrically connected to the upper electrode through the 1 st through hole and provided to extend at least to the 2 nd upper surface of the 2 nd protective film; and

and a 2 nd terminal electrode electrically connected to the lower electrode through the 2 nd through hole and provided to extend at least to the 2 nd upper surface of the 2 nd protective film.

2. A film capacitor according to claim 1,

the thickness of the 2 nd protective film is larger than the height of the 1 st through hole.

3. A film capacitor according to claim 1 or 2,

the thickness of the 2 nd protective film is 2 times or more and 20 times or less the height of the 1 st through hole.

4. A film capacitor according to any one of claims 1 to 3,

the thickness of the 2 nd protective film is 0.2 times or more and 2 times or less the length of the 1 st terminal electrode or the 2 nd terminal electrode in the direction in which the 1 st through hole and the 2 nd through hole are aligned when the 1 st upper surface of the 1 st protective film is viewed in plan.

5. A film capacitor according to any one of claims 1 to 4,

the 2 nd protective film is provided in a region between the 1 st through hole and the 2 nd through hole in the 1 st upper surface of the 1 st protective film.

6. A film capacitor according to claim 5,

the 2 nd protective film is further provided in a region outside a region between the 1 st through hole and the 2 nd through hole in the 1 st upper surface of the 1 st protective film.

7. A film capacitor according to any one of claims 1 to 6,

the 2 nd protective film has a side surface that is inverted from the 1 st upper surface toward the 2 nd upper surface.

8. A film capacitor according to any one of claims 1 to 7,

the 1 st protective film and the 2 nd protective film are integrally formed.

9. A film capacitor according to any one of claims 1 to 7,

the 1 st protective film and the 2 nd protective film are independently formed.

10. A film capacitor according to any one of claims 1 to 9,

the 1 st terminal electrode and the 2 nd terminal electrode are disposed at a distance from an outer edge of the 1 st upper surface in a direction intersecting with a direction in which the 1 st through-holes and the 2 nd through-holes are aligned, respectively, when the 1 st upper surface of the 1 st protective film is viewed in plan.

11. A method of manufacturing a thin film capacitor, comprising:

a step of providing a lower electrode;

a step of providing a dielectric film so as to cover the lower electrode;

a step of providing an upper electrode on the dielectric film so as to be opposed to the lower electrode;

a step of providing a 1 st protective film, the 1 st protective film being provided on the dielectric film and the upper electrode, having a 1 st through hole for opening the upper electrode and a 2 nd through hole for opening the lower electrode, and having a 1 st upper surface for defining a height of each of the 1 st through hole and the 2 nd through hole;

providing a 2 nd protective film, the 2 nd protective film being provided locally in a region seen in a plan view of the 1 st upper surface of the 1 st protective film, and having a 2 nd upper surface at a position higher than the 1 st upper surface of the 1 st protective film; and

and providing a 1 st terminal electrode and a 2 nd terminal electrode, wherein the 1 st terminal electrode and the 2 nd terminal electrode are electrically connected to the lower electrode and the upper electrode through the 1 st through hole and the 2 nd through hole, respectively, and extend to at least the 2 nd upper surface of the 2 nd protective film.

Technical Field

The invention relates to a thin film capacitor and a method of manufacturing the same.

Background

The thin film capacitor is formed, for example, by an MIM (Metal-Insulator-Metal) structure in which a lower electrode, a dielectric layer, and an upper electrode are sequentially stacked on a substrate. Various structures have been studied in order to suppress a decrease in reliability of the thin film capacitor due to hydrogen degradation, poor solder mounting, and the like.

For example, patent document 1 discloses a thin film capacitor in which at least an upper electrode is a laminated electrode in which a nitride and a metal are laminated, whereby hydrogen degradation can be suppressed while suppressing a decrease in IV characteristics as compared with an electrode using Pt. At this time, the upper surface of the upper electrode is covered with a protective film and a photosensitive resin, and the protective film and the photosensitive resin are provided with embedded conductors. The lower electrode and the upper electrode are connected to an external electrode provided on the upper surface of the photosensitive resin through embedded conductors, respectively.

Patent document 1, Japanese patent laid-open publication No. 2011-

However, if the size of the thin film capacitor in which the terminal electrode is provided on the protective film and the insulating layer is reduced as disclosed in patent document 1, there is a possibility that the solder fixing force required for stable mounting cannot be obtained due to a reduction in the area of the terminal electrode. Further, solder is not formed in a fillet shape, and the mounting posture of the film capacitor is unstable. Such poor solder mounting may cause reliability deterioration such as detachment of the film capacitor when an impact is applied, interference with other components, and the like.

Disclosure of Invention

The present invention has been made in view of such circumstances, and an object thereof is to provide a thin film capacitor capable of improving reliability.

A thin film capacitor according to an aspect of the present invention includes: a lower electrode; a dielectric film disposed over the lower electrode; an upper electrode facing the lower electrode with a dielectric film interposed therebetween; a 1 st protective film which is provided on the dielectric film and the upper electrode, has a 1 st through hole for opening the upper electrode and a 2 nd through hole for opening the lower electrode, and has a 1 st upper surface for defining the height of each of the 1 st through hole and the 2 nd through hole; a 2 nd protective film which is provided in a part of a region seen in a 1 st upper surface of the 1 st protective film in a plan view and has a 2 nd upper surface at a position higher than the 1 st upper surface of the 1 st protective film; a 1 st terminal electrode electrically connected to the upper electrode through the 1 st through hole and extending at least to a 2 nd upper surface of the 2 nd protective film; and a 2 nd terminal electrode electrically connected to the lower electrode through the 2 nd through hole and extending at least to the 2 nd upper surface of the 2 nd protective film.

A method of manufacturing a thin film capacitor according to another aspect of the present invention includes: a step of providing a lower electrode; a step of providing a dielectric film covering the lower electrode; a step of disposing an upper electrode on the dielectric film so as to be opposed to the lower electrode; a step of providing a 1 st protective film, wherein the 1 st protective film is provided on the dielectric film and the upper electrode, and has a 1 st through hole for opening the upper electrode and a 2 nd through hole for opening the lower electrode, and has a 1 st upper surface for defining the height of each of the 1 st through hole and the 2 nd through hole; a step of providing a 2 nd protective film, wherein the 2 nd protective film is provided in a part of a region seen in a 1 st upper surface of the 1 st protective film in plan view, and has a 2 nd upper surface at a position higher than the 1 st upper surface of the 1 st protective film; and a step of providing a 1 st terminal electrode and a 2 nd terminal electrode, wherein the 1 st terminal electrode and the 2 nd terminal electrode are electrically connected to the lower electrode and the upper electrode through the 1 st through hole and the 2 nd through hole, respectively, and extend to at least a 2 nd upper surface of the 2 nd protective film.

According to the present invention, a thin film capacitor capable of improving reliability can be provided.

Drawings

Fig. 1 is a plan view schematically showing the structure of a thin film capacitor according to embodiment 1.

Fig. 2 is a sectional view schematically showing the structure of a section taken along line II-II of the thin film capacitor shown in fig. 1.

Fig. 3 is an enlarged cross-sectional view of the thin-film capacitor shown in fig. 2, with the 1 st terminal electrode as the center.

Fig. 4 is a cross-sectional view schematically showing a mounting method of the film capacitor according to embodiment 1 to an external substrate.

Fig. 5 is a flowchart schematically illustrating a method for manufacturing a thin film capacitor according to embodiment 1.

Fig. 6 is a cross-sectional view schematically showing a process of providing a lower electrode over a substrate.

Fig. 7 is a cross-sectional view schematically showing a process of providing an upper electrode over a dielectric film.

Fig. 8 is a cross-sectional view schematically showing a process of providing the 1 st protective film and the 2 nd protective film.

Fig. 9 is a cross-sectional view schematically showing a process of providing the 1 st terminal electrode and the 2 nd terminal electrode.

Fig. 10 is a cross-sectional view schematically showing the structure of the film capacitor according to embodiment 2.

Fig. 11 is a cross-sectional view schematically showing the structure of the film capacitor according to embodiment 3.

Fig. 12 is a plan view schematically showing the structure of the thin film capacitor according to embodiment 4.

Fig. 13 is a cross-sectional view schematically showing the structure of the film capacitor according to embodiment 4.

Fig. 14 is a cross-sectional view schematically showing the structure of the film capacitor according to embodiment 5.

Fig. 15 is a plan view schematically showing the structure of the thin film capacitor according to embodiment 6.

Fig. 16 is a cross-sectional view schematically showing the structure of the film capacitor according to embodiment 6.

Fig. 17 is a cross-sectional view schematically showing the structure of the film capacitor according to embodiment 7.

Fig. 18 is a plan view schematically showing the structure of the thin film capacitor according to embodiment 8.

Fig. 19 is a cross-sectional view schematically showing the structure of the film capacitor according to embodiment 8.

Fig. 20 is a cross-sectional view schematically showing the structure of the film capacitor according to embodiment 9.

Detailed Description

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments of embodiment 2, the description of the same or similar components as those of embodiment 1 will be omitted as appropriate. Moreover, among the effects obtained in the following embodiments of embodiment 2, the description of the same effects as those of embodiment 1 will be omitted as appropriate. The drawings of the embodiments are illustrative, and the dimensions and shapes of the respective portions are schematic, and it should not be understood that the technical scope of the invention of the present application is limited to the embodiments.

In each drawing, a rectangular coordinate system (XYZ coordinate system) including X, Y, and Z axes may be used for convenience in order to clarify the relationship between the drawings and to help understand the positional relationship between the members. The direction parallel to the X axis is referred to as "X axis direction". The same applies to the direction parallel to the other axes. In the following description, the positive Z-axis direction side is referred to as "up (upward)". The X-axis direction is not limited to the positive direction of the arrow, and includes a negative direction opposite to the arrow. A plane parallel to a plane defined by the X axis and the Y axis is referred to as an "XY plane". The same applies to a plane parallel to a plane defined by the other axes.

< embodiment 1 >

First, the structure of a thin-film capacitor 100 according to embodiment 1 of the present invention will be described with reference to fig. 1 to 2. Fig. 1 is a plan view schematically showing the structure of a thin film capacitor according to embodiment 1. Fig. 2 is a sectional view schematically showing the structure of a section taken along line II-II of the thin film capacitor shown in fig. 1.

The thin film capacitor 100 includes a substrate 110, a lower electrode 120, a dielectric film 130, an upper electrode 140, a step-shaped protective film 150, a 1 st terminal electrode 161, and a 2 nd terminal electrode 162.

The substrate 110 has a 1 st main surface 110A and a 2 nd main surface 110B parallel to the XY plane. The 1 st main surface 110A is a main surface on the positive Z-axis direction side, and the 2 nd main surface 110B is a main surface on the negative Z-axis direction side. The substrate 110 has a rectangular shape when viewed from the direction normal to the 1 st main surface 110A. The shape of the substrate 110 is not limited to the above shape, and may be a polygonal shape, a circular shape, an elliptical shape, or a combination thereof.

The substrate 110 has a two-layer structure including a semiconductor substrate 111 on the 2 nd main surface 110B side and an insulating layer 112 on the 1 st main surface 110A side. For example, the semiconductor substrate 111 is a low-resistance silicon substrate, and the insulating layer 112 is silicon oxide (SiO)₂) And (3) a membrane. By forming the thin film capacitor 100 on the semiconductor substrate 111, another semiconductor element is formed on the same substrate, and an integrated circuit including the thin film capacitor 100 can be formed. The insulating layer 112 suppresses generation of parasitic capacitance and generation of leakage current. The semiconductor substrate 111 is not limited to a silicon substrate, and may be a substrate made of a compound semiconductor such as a gallium arsenide substrate. In addition, if the insulation is higher than that of the semiconductor substrate 111, the insulating layer 112 is not limited to SiO₂The film may be a silicon nitride (SiN) film, a silicon oxynitride (SiON) film, or an aluminum oxide (Al)₂O₃) Films, and the like. The substrate 110 may be a single-layer insulating substrateThe substrate may have a multilayer structure of 3 or more layers.

The lower electrode 120 is disposed on the 1 st main surface 110A of the substrate 110. The lower electrode 120 is formed in an island shape, and the lower electrode 120 is positioned inside the substrate 110 when viewed from the direction of the normal to the 1 st main surface 110A of the substrate 110. The lower electrode 120 is formed of a metal such as Cu (copper), Ag (silver), Au (gold), Al (aluminum), Mo (molybdenum), W (tungsten), Pt (platinum), Ti (titanium), Ni (nickel), or Cr (chromium), or an alloy thereof. The material of the lower electrode 120 is not limited to the above, and may be RuO as long as it has conductivity₂、SrRuO₃、LaNiO₃The metal oxide may be an organic material such as a conductive resin. The lower electrode 120 may have a multilayer structure.

The dielectric film 130 covers the lower electrode 120. That is, the dielectric film 130 is provided on the lower electrode 120, and is adjacent to the end surface of the lower electrode 120. The dielectric film 130 has an insulating property and is made of, for example, a silicon compound or a metal oxide. Examples of the silicon compound include SiO₂SiN, SiNO, etc. Examples of the metal oxide include Al₂O₃Hafnium oxide (HfO)₂) Tantalum oxide (Ta)₂O₅) Barium titanate (BaTiO)₃) Barium strontium titanate ((BaSr) TiO)₃) Strontium titanate (SrTiO)₃) Calcium zirconate (CaZrO)₃) And the like. From the viewpoint of increasing the capacitance of the thin film capacitor 100, the dielectric film 130 is preferably formed of a material having a high dielectric constant, for example, a material having a higher dielectric constant than SiO₂A perovskite type oxide having a high dielectric constant is provided. Further, the dielectric film 130 may have a multilayer structure.

The upper electrode 140 is disposed on the dielectric film 130. The upper electrode 140 faces the lower electrode 120 in the Z-axis direction via the dielectric film 130. The upper electrode 140 is formed of a conductive material appropriately selected from, for example, metals, metal oxides, and organic materials, which are given as the constituent materials of the lower electrode 120.

The step-like protective film 150 has a step shape and includes a 1 st protective film 151 and a 2 nd protective film 152. The 1 st protective film 151 corresponds to a lower layer of the step-shaped protective film 150, and the 2 nd protective film 152 corresponds to an upper layer of the step-shaped protective film 150. In other words, the 2 nd protective film 152 forms the step of the step-like protective film 150. The 1 st protective film 151 and the 2 nd protective film 152 are independently formed. That is, the 1 st protective film 151 and the 2 nd protective film 152 are sequentially formed through different processes. At this time, for example, a boundary surface is formed between the 1 st protective film 151 and the 2 nd protective film 152. Here, the 1 st protective film 151 and the 2 nd protective film 152 may be integrally formed. That is, the 1 st protective film 151 and the 2 nd protective film 152 may be formed together by the same process.

The 1 st protective film 151 is disposed over the dielectric film 130 and the upper electrode 140, and has a 1 st upper surface 150A on the side opposite to the side of the dielectric film 130. The 1 st protective film 151 has a 1 st through hole CH11 and a 2 nd through hole CH12 that have open ends on the 1 st upper surface 150A and pass through the 1 st protective film 151 in the Z-axis direction. The 1 st through hole CH11 opens the upper electrode 140, and the 2 nd through hole CH12 opens the lower electrode 120. The 1 st through hole CH11 and the 2 nd through hole CH12 are aligned in the X axis direction, and the 1 st through hole CH11 is located on the X axis negative direction side of the 2 nd through hole CH 12. The 2 nd through hole CH12 penetrates not only the 1 st protective film 151 but also the dielectric film 130. For example, the 2 nd through hole CH12 includes: integrally penetrates the 1 st protective film 151 and the inner side surface of the dielectric film 130 extending in the Z-axis direction. Alternatively, the 2 nd through hole CH12 may not necessarily integrally penetrate the 1 st protective film 151 and the dielectric film 130, but may have a step at the boundary between the dielectric film 130 and the 1 st protective film 151, and may have a discontinuous diameter change.

The 2 nd protective film 152 is disposed over the 1 st upper surface 150A of the 1 st protective film 151. In addition, the 2 nd protective film 152 includes a region between the 1 st through hole CH11 and the 2 nd through hole CH12 and extends in the Y-axis direction. The thickness of the 2 nd protective film 152 is greater than that of the 1 st protective film 151. The 2 nd protective film 152 has a 2 nd upper surface 150B on the side opposite to the side of the dielectric film 130. The 2 nd protective film 152 has side surfaces 150C and 150D. The side surfaces 150C and 150D correspond to end surfaces extending in the Y-axis direction among end surfaces connecting the 1 st upper surface 150A and the 2 nd upper surface 150B. The side surfaces 150C and 150D face each other in the X-axis direction. The side surface 150C is located on the 1 st through hole CH11 side, and the side surface 150D is located on the 2 nd through hole CH12 side.

The 1 st protective film 151 and the 2 nd protective film 152 are each provided by an insulating material. Such an insulating material is not particularly limited, but is preferably a resin material such as a polyimide-based resin, an epoxy-based resin, a phenol-based resin, a benzocyclobutene-based resin, a polyamide-based resin, or a fluorine-based resin, from the viewpoint of absorbing impact and suppressing damage to the film capacitor 100. In addition, from the viewpoint of suppressing deterioration of the lower electrode 120, the dielectric film 130, and the upper electrode 140, it is preferable that the insulating material is an insulating material against hydrogen (H)₂) Water vapor (H)₂O) and the like, and is suitable for use with, for example, a polyimide resin. The 1 st protective film 151 and the 2 nd protective film 152 are provided by the same material, for example. Here, the 1 st protective film 151 and the 2 nd protective film 152 may be formed of different materials. Further, the 1 st protective film 151 and the 2 nd protective film 152 may have a multilayer structure. For example, the 1 st protective film 151 may have a layer with high moisture resistance such as SiN on the side of the dielectric film 130 and the upper electrode 140.

The 1 st terminal electrode 161 is an electrode for electrically connecting the upper electrode 140 to an external power supply and for applying a voltage to the upper electrode 140. The 1 st terminal electrode 161 is electrically connected to the upper electrode 140 through the 1 st through hole CH 11. The 1 st terminal electrode 161 extends over the 1 st upper surface 150A, the side surface 150C, and the 2 nd upper surface 150B. Similarly, the 2 nd terminal electrode 162 is an electrode for applying a voltage to the lower electrode 120, and is electrically connected to the lower electrode 120 through the 2 nd through hole CH 12. The 2 nd terminal electrode 162 extends over the 1 st upper surface 150A, the side surface 150D, and the 2 nd upper surface 150B. The material constituting the 1 st terminal electrode 161 and the 2 nd terminal electrode 162 is not particularly limited as long as it is a conductive material, but is preferably formed of a metal material having good conductivity such as Cu, Ag, Au, or Al. In addition, the 1 st terminal electrode 161 and the 2 nd terminal electrode 162 may have a multilayer structure. The 1 st and 2 nd terminal electrodes 161 and 162 having a multilayer structure preferably have surface layers having good chemical stability such as corrosion resistance and oxidation resistance, and particularly preferably have a metal layer containing Au on the surface.

Next, referring to fig. 3, the dimensions of the step-shaped protective film 150, the 1 st terminal electrode 161, and the 2 nd terminal electrode 162 will be described. Fig. 3 is an enlarged cross-sectional view of the thin-film capacitor shown in fig. 2, with the 1 st terminal electrode as the center. Note that, although the description is given focusing on the size of the 1 st terminal electrode 161 with reference to fig. 3, the size of the 2 nd terminal electrode 162 is the same as that of the 1 st terminal electrode 161, and therefore, the description is omitted.

The height H2 of the side surface 150C in the Z axis direction is greater than the height H1 of the 1 st through hole CH11 in the Z axis direction (H1 < H2). The height H2 is preferably 2 times or more and 20 times or less (2. ltoreq. H2/H1. ltoreq.20) the height H1. This can increase the surface area of the 1 st terminal electrode 161 and suppress the increase in size of the thin-film capacitor 100. Specifically, if the height H2 is less than 2 times the height H1, the surface area of the 1 st terminal electrode 161 cannot be sufficiently enlarged, and the effect of improving the mountability of the film capacitor 100 is reduced. If height H2 is greater than 20 times height H1, the height of film capacitor 100 becomes too high, and film capacitor 100 is structurally unstable. For example, the step-like protective film 150 is formed so that the height H1 is 3 μm or more and 5 μm or less and the height H2 is 10 μm or more and 100 μm or less. The height H1 corresponds to the thickness of the 1 st protective film 151, and the height H2 corresponds to the thickness of the 2 nd protective film 152. The height H2 corresponds to the height of the 1 st terminal electrode 161 along the side surface 150C.

The width W1 of the 1 st through hole CH11 in the X axis direction is smaller than the width W2 of the 1 st terminal electrode 161 in the X axis direction (W1 < W2). The width W1 is greater than the height H1(H1 < W1). This can increase the contact area between the 1 st terminal electrode 161 and the upper electrode 140, and can suppress the occurrence of a short circuit between the terminal electrodes and a leakage current due to the reduction in the width of the 2 nd protective film 152. The height H2 is preferably 0.2 to 2 times (0.2. ltoreq. H2/W2. ltoreq.2) the width W2. This can increase the surface area of the 1 st terminal electrode 161 and suppress the increase in size of the thin-film capacitor 100. Specifically, if the height H2 is less than 0.2 times the width W2, the surface area of the 1 st terminal electrode 161 cannot be sufficiently increased, and the effect of improving the mountability of the film capacitor 100 is reduced. If the height H2 is greater than 2 times the width W2, the height of the film capacitor 100 becomes too high, and the film capacitor 100 is structurally unstable.

Next, a mounting method of the film capacitor 100 will be described with reference to fig. 4. Fig. 4 is a cross-sectional view schematically showing a mounting method of the film capacitor according to embodiment 1 to an external substrate.

The thin-film capacitor 100 is mounted on the external substrate 10 with the solder 11 and the solder 12. The solder 11 electrically connects the 1 st terminal electrode 161 and the external substrate 10, and the solder 12 electrically connects the 2 nd terminal electrode 162 and the external substrate 10. Since the 1 st terminal electrode 161 extends along the side surface 150C, the surface area of the 1 st terminal electrode 161 is increased, and thus the adhesion force between the 1 st terminal electrode 161 and the solder 11 is increased. In addition, the 1 st terminal electrode 161 extends at the side surface 150C, so that the solder 11 can be formed in a fillet shape. Similarly, the 2 nd terminal electrode 162 can improve the adhesion force with the solder 12, and the solder 12 can be formed in a fillet shape. The adhesion force between the solder 11 and the solder 12 is increased, thereby improving the mountability of the film capacitor 100. Further, solder 11 and solder 12 are formed in a fillet shape, so that the posture of film capacitor 100 is prevented from being disturbed, and contact with other elements and wirings can be prevented.

Next, a method for manufacturing the film capacitor 100 will be described with reference to fig. 5 to 9. Fig. 5 is a flowchart schematically illustrating a method for manufacturing a thin film capacitor according to embodiment 1. Fig. 6 is a cross-sectional view schematically showing a process of providing a lower electrode over a substrate. Fig. 7 is a cross-sectional view schematically showing a process of providing an upper electrode over a dielectric film. Fig. 8 is a cross-sectional view schematically showing a process of providing the 1 st protective film and the 2 nd protective film. Fig. 9 is a cross-sectional view schematically showing a process of providing the 1 st terminal electrode and the 2 nd terminal electrode.

First, a substrate 1010 is prepared (S11). At this time, first, a flat semiconductor substrate 1011 is prepared. A semiconductor substrate 1011 is formed by slicing a silicon single crystal ingot to obtain a silicon wafer and smoothing the surface of the silicon wafer by polishing. Next, the 1 st main surface 1010A side of the semiconductor substrate 1011 is thermally oxidized to form SiO₂Insulating layer 1012 of film as a watchA surface oxide film.

Next, the lower electrode 1020 is provided (S12). As shown in fig. 6, the lower electrode 1020 is provided on the 1 st main surface 1010A side of the substrate 1010, that is, on the insulating layer 1012 side. Etching by photolithography is performed for patterning the lower electrode 1020. That is, first, a metal layer is formed on the entire surface of the 1 st main surface 1010A of the substrate 1010. Next, a resin layer after patterning is provided over the metal layer by photolithography. Next, the metal layer is etched using the resin layer as a mask, and then the resin layer is removed and cleaned. The patterning of the lower electrode 1020 is not limited to etching, and may be a so-called lift-off method in which a metal layer is provided on a resin layer after the patterning, and a part of the metal layer is removed together with the resin layer. The lower electrode 1020 may be provided by plating using a conductive layer after patterning as a base layer.

Next, the dielectric film 1030 is provided (S13). As shown in fig. 7, a dielectric film 1030 is disposed over the substrate 1010 and the lower electrode 1020, covering the lower electrode 1020. The dielectric film 1030 is provided by depositing a dielectric by a cvd (chemical Vapor deposition) method or a pvd (physical Vapor deposition) method. Thus, a dense dielectric film 1030 is formed, and operation failure of the thin film capacitor 100 due to short circuit between the lower electrode 1020 and the upper electrode 1040, electric field concentration against defects, or the like can be suppressed. The method for forming dielectric film 1030 is not limited to the above, and may be provided by a wet process such as various printing methods such as spin coating and gravure printing.

Next, the upper electrode 1040 is provided (S14). The upper electrode 1040 can be patterned in the same manner as the lower electrode 1020. As shown in fig. 7, after the upper electrode 1040 is patterned, a portion of the dielectric film 1030 is removed to expose a portion of the lower electrode 1020. The removed portion of the dielectric film 1030 corresponds to a part of the 2 nd through hole CH102 for the 2 nd terminal electrode 1062 to be described later to contact the lower electrode 1020.

Next, the 1 st protective film 1051 is provided (S15). As shown in fig. 8, a 1 st protective film 1051 is formed by forming a film of a photosensitive resin such as a photosensitive polyimide on a dielectric film 1030 and an upper electrode 1040, and patterning the film by photolithography. In other words, the photosensitive portion or the non-photosensitive portion of the photosensitive resin after exposure is dissolved and removed by the developer, and as a result, the remaining portion becomes the 1 st protective film 1051. At this time, the patterning also forms the 1 st through hole CH101 and the 2 nd through hole CH102 together with the outer shape of the 1 st protective film 1051. The pattern of the 1 st protective film 1051 is not limited to the above-described embodiment, and for example, the pattern may be formed by etching a part of the resin layer to be the 1 st protective film 1051 using a photoresist patterned by photolithography as a mask.

Next, the 2 nd protective film 1052 is provided (S16). As shown in fig. 8, similarly to the 1 st protective film 1051, the 2 nd protective film 1052 is formed by forming a photosensitive resin on the 1 st protective film 1051 and patterning it by photolithography. The order of forming and patterning the 1 st protective film 1051 and the 2 nd protective film 1052 is not limited to the above-described embodiment. For example, after the 1 st protective film 1051 is formed, the 2 nd protective film 1052 may be formed, and then the 2 nd protective film 1052 and the 1 st protective film 1051 may be patterned in this order. Further, the 1 st protective film 1051 and the 2 nd protective film 1052 may be collectively patterned by multi-gray scale exposure using a halftone mask, a gray tone mask, or the like.

Next, the 1 st and 2 nd terminal electrodes 1061 and 1062 are provided (S17). As shown in fig. 9, the 1 st terminal electrode 1061 is patterned to extend into the 1 st through hole CH101 of the step-like protective film 1050 and over the 1 st upper surface 1050A, the side surfaces 1050C, and the 2 nd upper surface 1050B. The 2 nd terminal electrode 1062 is also patterned in the same manner. The 1 st and 2 nd terminal electrodes 1061 and 1062 can be patterned in the same manner as the lower and upper electrodes 1020 and 1040.

Finally, the substrate 1010 and the dielectric film 1030 are cut along the dicing lines DL to singulate the thin film capacitor 100. The singulation method is not particularly limited, and singulation can be performed by dicing, stealth dicing, dry etching, or the like.

Other embodiments will be described below. In the following embodiments, the description of the matters common to the above-described embodiment 1 is omitted, and only the differences will be described. The structure denoted by the same name as embodiment 1 has the same function and effect as those of embodiment 1, and detailed description thereof is omitted.

< embodiment 2 >

The structure of the thin-film capacitor 200 according to embodiment 2 will be described with reference to fig. 10. Fig. 10 is a cross-sectional view schematically showing the structure of the film capacitor according to embodiment 2. The film capacitor 200 includes: a substrate 210 composed of a semiconductor substrate 211 and an insulating layer 212, a lower electrode 220, a dielectric film 230, an upper electrode 240, a step-shaped protective film 250 composed of a 1 st protective film 251 and a 2 nd protective film 252, a 1 st terminal electrode 261, and a 2 nd terminal electrode 262. The substrate 210 has a 1 st major surface 210A and a 2 nd major surface 210B. The step-like protective film 250 has a 1 st upper surface 250A, a 2 nd upper surface 250B, and side surfaces 250C, 250D, and is formed with a 1 st through hole CH21 and a 2 nd through hole CH 22.

The film capacitor 200 according to embodiment 2 is different from the film capacitor 100 according to embodiment 1 in that a stepped protective film 250 is integrally formed. The step-shaped protective film 250 forms the 1 st protective film 251 and the 2 nd protective film 252 by one member in succession. In such a configuration, the manufacturing process can be simplified, and the manufacturing cost can be reduced. In addition, since damage at the boundary between the 1 st protective film 251 and the 2 nd protective film 252 can be suppressed, the mechanical strength of the step-shaped protective film 250 is improved.

< embodiment 3 >

The structure of the film capacitor 300 according to embodiment 3 will be described with reference to fig. 11. Fig. 11 is a cross-sectional view schematically showing the structure of the film capacitor according to embodiment 3. The film capacitor 300 includes: a substrate 310 composed of a semiconductor substrate 311 and an insulating layer 312, a lower electrode 320, a dielectric film 330, an upper electrode 340, a step-shaped protective film 350 composed of a 1 st protective film 351 and a 2 nd protective film 352, a 1 st terminal electrode 361, and a 2 nd terminal electrode 362. The substrate 310 has a 1 st major surface 310A and a 2 nd major surface 310B. The step-shaped protective film 350 has a 1 st upper surface 350A, a 2 nd upper surface 350B, and side surfaces 350C, 350D, and is formed with a 1 st through hole CH31 and a 2 nd through hole CH 32.

The film capacitor 300 according to embodiment 3 is different from the film capacitor 100 according to embodiment 1 in that the cross-sectional shape of the 2 nd protective film 352 is reverse tapered. In other words, the 2 nd protective film 352 has: and side surfaces 350C, 350D that are reverse tapered from the 1 st upper surface 350A toward the 2 nd upper surface 350B. In other words, the 1 st upper surface 350A and the side surface 350C of the step-like protection film 350 are acute-angled on the 1 st terminal electrode 361 side. Similarly, the 1 st upper surface 350A and the side surface 350D are also acute-angled on the 2 nd terminal electrode 362 side. Accordingly, the surface areas of the 1 st terminal electrode 361 and the 2 nd terminal electrode 362 can be enlarged without enlarging the area of each of the 1 st terminal electrode 361 and the 2 nd terminal electrode 362 when viewed from the normal direction of the 2 nd upper surface 350B of the step-shaped protective film 350. Further, the solder is less likely to peel off due to the anchor effect, and the bonding strength of the thin-film capacitor 300 to the external substrate can be improved.

< embodiment 4 >

The structure of the film capacitor 400 according to embodiment 4 will be described with reference to fig. 12 and 13. Fig. 12 is a plan view schematically showing the structure of the thin film capacitor according to embodiment 4. Fig. 13 is a cross-sectional view schematically showing the structure of the film capacitor according to embodiment 4. The film capacitor 400 includes: a substrate 410 composed of a semiconductor substrate 411 and an insulating layer 412, a lower electrode 420, a dielectric film 430, an upper electrode 440, a step-like protective film 450 composed of a 1 st protective film 451 and a 2 nd protective film 452, a 1 st terminal electrode 461, and a 2 nd terminal electrode 462. The substrate 410 has a 1 st major surface 410A and a 2 nd major surface 410B. The step-like protective film 450 has a 1 st upper surface 450A, a 2 nd upper surface 450B, and side surfaces 450C, 450D, and is formed with a 1 st through hole CH41 and a 2 nd through hole CH 42.

The film capacitor 400 according to embodiment 4 is different from the film capacitor 100 according to embodiment 1 in that a 2 nd protective film 452 is further provided on the opposite side of the 1 st through hole CH41 and the 2 nd through hole CH42 from each other when viewed from the normal direction of the 1 st upper surface 450A. Specifically, three 2 nd protective films 452 are provided over the 1 st protective film 451. The three 2 nd protective films 452 extend in the Y axis direction, and are arranged in the X axis direction at intervals. One of the 2 nd protective films 452 is located over a region between the 1 st through hole CH41 and the 2 nd through hole CH 42. The remaining two 2 nd protective films 452 are provided in the region outside the region between the 1 st through hole CH41 and the 2 nd through hole CH 42. Specifically, one of the through holes is located in the region on the X-axis negative direction side of the 1 st through hole CH41, and has a side surface 450E on the 1 st through hole CH41 side. One of the 2 nd through holes HC42 is located above the region in the positive X-axis direction, and has a side surface 450F on the 2 nd through hole HC42 side. In other words, the three 2 nd protective films 452 are provided in the region between the 1 st through hole CH41 and the 2 nd through hole CH42, the region on the opposite side of the 2 nd through hole CH42 as viewed from the 1 st through hole CH41, and the region on the opposite side of the 1 st through hole CH41 as viewed from the 2 nd through hole CH42, respectively.

When viewed from the normal direction of the 1 st upper surface 450A, the 1 st through hole CH41 and the 2 nd through hole CH42 are sandwiched between the 2 nd protective film 452 in the X-axis direction in which the 1 st through hole CH41 and the 2 nd through hole CH42 are aligned. The side surface 450E is located on the X-axis negative direction side of the 1 st through hole CH41, and faces the side surface 450C with a space therebetween. The side surface 450F is located on the X-axis positive direction side of the 2 nd through hole CH42, and faces the side surface 450D with a space therebetween. The 1 st terminal electrode 461 also extends onto the side surface 450E, and the 2 nd terminal electrode 462 also extends onto the side surface 450F. Accordingly, the surface areas of the 1 st terminal electrode 461 and the 2 nd terminal electrode 462 can be further enlarged. Further, when the film capacitor 400 is mounted, the side surfaces 450E and 450F can be suppressed from flowing out to the outside in the X-axis direction of the solder, and therefore the mounting posture of the film capacitor 400 can be stabilized.

Further, between the side surface 450C and the side surface 450E, the 1 st upper surface 450A extends in the Y-axis direction from a region overlapping with the 1 st terminal electrode 461. Between the side surface 450D and the side surface 450F, the 1 st upper surface 450A extends in the Y-axis direction from a region overlapping with the 2 nd terminal electrode 462. In other words, the 1 st and 2 nd terminal electrodes 461 and 462, respectively, are disposed at a distance in the Y-axis direction with respect to the outer edge of the 1 st upper surface 450A of the 1 st protective film 451. Accordingly, the solder excessively applied at the time of mounting wets and spreads on the 1 st upper surface 450A in the Y-axis direction, and thus the mounting posture of the film capacitor 400 can be stabilized.

< embodiment 5 >

The structure of the thin film capacitor 500 according to embodiment 5 will be described with reference to fig. 14. Fig. 14 is a cross-sectional view schematically showing the structure of the film capacitor according to embodiment 5. The film capacitor 500 includes: a substrate 510 composed of a semiconductor substrate 511 and an insulating layer 512, a lower electrode 520, a dielectric film 530, an upper electrode 540, a step-like protective film 550 composed of a 1 st protective film 551 and a 2 nd protective film 552, a 1 st terminal electrode 561, and a 2 nd terminal electrode 562. The substrate 510 has a 1 st major surface 510A and a 2 nd major surface 510B. The step-like protective film 550 has a 1 st upper surface 550A, a 2 nd upper surface 550B, and side surfaces 550C, 550D, 550E, and 550F, and is formed with a 1 st through hole CH51 and a 2 nd through hole CH 52.

The film capacitor 500 according to embodiment 5 is different from the film capacitor 400 according to embodiment 4 in that the 2 nd protective film 552 has an inverted cone shape. In other words, the angle formed by the 1 st upper surface 550A and the side surface 550C on the 1 st terminal electrode 561 side is an acute angle, and the angle formed by the 1 st upper surface 550A and the side surface 550E on the 1 st terminal electrode 561 side is an acute angle. The angle formed by the 1 st upper surface 550A and the side surface 550D on the 2 nd terminal electrode 562 side is acute, and the angle formed by the 1 st upper surface 550A and the side surface 550F on the 2 nd terminal electrode 562 side is acute. Accordingly, the surface areas of the 1 st terminal electrode 561 and the 2 nd terminal electrode 562 can be increased without increasing the area of the 1 st terminal electrode 561 and the 2 nd terminal electrode 562 as viewed from a normal direction of the 2 nd upper surface 550B of the step-shaped protective film 550 in plan view. Further, the solder is less likely to peel off due to the anchor effect, and the bonding strength of the film capacitor 500 to the external substrate can be improved.

< embodiment 6 >

The structure of the film capacitor 600 according to embodiment 6 will be described with reference to fig. 15 and 16. Fig. 15 is a plan view schematically showing the structure of the thin film capacitor according to embodiment 6. Fig. 16 is a cross-sectional view schematically showing the structure of the film capacitor according to embodiment 6. The film capacitor 600 includes: a substrate 610 composed of a semiconductor substrate 611 and an insulating layer 612, a lower electrode 620, a dielectric film 630, an upper electrode 640, a protective film 650, a 1 st terminal electrode 661, and a 2 nd terminal electrode 662. The substrate 610 has a 1 st major surface 610A and a 2 nd major surface 610B. Protective film 650 has an upper surface 650B and side surfaces 650C, 650D.

The film capacitor 600 according to embodiment 6 is different from the film capacitor 100 according to embodiment 1 in that the 1 st protective film is omitted. The protective film 650 is disposed only between the 1 st terminal electrode 661 and the 2 nd terminal electrode 662. The protective film 650 corresponds to the 2 nd protective film 152 of the thin-film capacitor 100 according to embodiment 1, and is also based on the height and other dimensions. For example, the height H62 of the side surface 650C of the protective film 650 corresponds to the height of the portion extending on the side surface 650C of the 1 st terminal electrode 661, and is preferably 0.2 times or more and 2 times or less (0.2 ≦ H62/W62 ≦ 2) the width W62 of the 1 st terminal electrode 661 in the X-axis direction. The height H62 is preferably 10 μm or more and 100 μm or less.

The 1 st terminal electrode 661 extends over the upper surface of the upper electrode 640, and the side surface 650C and the upper surface 650B of the protective film 650. The 2 nd terminal electrode 662 extends over the upper surface of the dielectric film 630 and the side surface 650D and the upper surface 650B of the protective film 650, and electrically contacts the lower electrode 620 through a through hole formed in the dielectric film 630. The upper electrode 640 preferably has a chemically stable Au layer on the outermost surface because it is partially exposed.

Even if the 2 nd protective film is omitted and the protective film 650 is provided only between the 1 st terminal electrode 661 and the 2 nd terminal electrode 662 in this way, the same effect as that of embodiment 1 can be obtained if the height H62 of the protective film 650 is sufficiently high.

< 7 th embodiment >

The structure of the film capacitor 700 according to embodiment 7 will be described with reference to fig. 17. Fig. 17 is a cross-sectional view schematically showing the structure of the film capacitor according to embodiment 7. The film capacitor 700 includes: a substrate 710 including a semiconductor substrate 711 and an insulating layer 712, a lower electrode 720, a dielectric film 730, an upper electrode 740, a protective film 750, a 1 st terminal electrode 761, and a 2 nd terminal electrode 762. The substrate 710 has a 1 st major surface 710A and a 2 nd major surface 710B. The protective film 750 has an upper surface 750B and side surfaces 750C and 750D.

The thin film capacitor 700 according to embodiment 7 is different from the thin film capacitor 600 according to embodiment 6 in that the protective film 750 has an inverted cone shape. In other words, the upper surface 750B of the protective film 750 is set larger than the lower surface of the protective film 750 on the side of the dielectric film 730. Accordingly, the same effects as those of embodiment 3 can be obtained.

< embodiment 8 >

The structure of the film capacitor 800 according to embodiment 8 will be described with reference to fig. 18 and 19. Fig. 18 is a plan view schematically showing the structure of the thin film capacitor according to embodiment 8. Fig. 19 is a cross-sectional view schematically showing the structure of the film capacitor according to embodiment 8. The film capacitor 800 includes: a substrate 810 composed of a semiconductor substrate 811 and an insulating layer 812, a lower electrode 820, a dielectric film 830, an upper electrode 840, a protective film 850, a 1 st terminal electrode 861, and a 2 nd terminal electrode 862. The substrate 810 has a 1 st major surface 810A and a 2 nd major surface 810B. The protective film 850 has an upper surface 850B and side surfaces 850C, 850D, 850E, 850F.

The film capacitor 800 according to embodiment 8 is different from the film capacitor 600 according to embodiment 6 in that three protective films 850 are arranged at intervals in the X-axis direction when viewed from the normal direction of the upper surface 850B. The three protective films 850 extend in the Y-axis direction, and each of the three protective films 850 has: a side surface 850E facing the side surface 850C with a space therebetween, and a side surface 850F facing the side surface 850D with a space therebetween. The 1 st terminal electrode 861 also extends over side 850E, and the 2 nd terminal electrode 862 also extends over side 850F. Between the side surface 850C and the side surface 850E, the upper electrode 840 extends in the Y-axis direction from a region overlapping with the 1 st terminal electrode 861. Between side 850D and side 850F, the upper surface of dielectric film 830 extends in the Y-axis direction from the area overlapping with terminal electrode 862 No. 2. Accordingly, the same effects as those of embodiment 4 can be obtained.

< embodiment 9 >

The structure of the thin film capacitor 900 according to embodiment 9 will be described with reference to fig. 20. Fig. 20 is a cross-sectional view schematically showing the structure of the film capacitor according to embodiment 9. The film capacitor 900 includes: a substrate 910 including a semiconductor substrate 911 and an insulating layer 912, a lower electrode 920, a dielectric film 930, an upper electrode 940, a protective film 950, a 1 st terminal electrode 961, and a 2 nd terminal electrode 962. Substrate 910 has a 1 st major surface 910A and a 2 nd major surface 910B. The protective film 950 has an upper surface 950B and side surfaces 950C, 950D, 950E, and 950F.

The thin film capacitor 900 according to embodiment 9 is different from the thin film capacitor 800 according to embodiment 8 in that the protective film 950 has an inverted cone shape. In other words, an angle formed by the upper surface 950B and the side surface 950C on the 1 st terminal electrode 961 side is an obtuse angle, and an angle formed by the upper surface 950B and the side surface 950E on the 1 st terminal electrode 961 side is an obtuse angle. An angle formed between the upper surface 950B and the side surface 950D on the 2 nd terminal electrode 962 side is an obtuse angle, and an angle formed between the upper surface 950B and the side surface 950F on the 2 nd terminal electrode 962 side is an obtuse angle. Accordingly, the same effects as those of embodiment 5 can be obtained.

As described above, according to one aspect of the present invention, there is provided a thin film capacitor 100 including: a lower electrode 120; a dielectric film 130 disposed over the lower electrode 120; an upper electrode 140 facing the lower electrode 120 via the dielectric film 130; a 1 st protective film 151 provided on the dielectric film 130 and the upper electrode 140, having a 1 st through hole CH11 for opening the upper electrode 140 and a 2 nd through hole CH12 for opening the lower electrode 120, respectively, and having a 1 st upper surface 150A for defining the height of each of the 1 st through hole CH11 and the 2 nd through hole CH 12; a 2 nd protective film 152 provided in a part of a region seen in a plan view of the 1 st upper surface 150A of the 1 st protective film 151, and having a 2 nd upper surface 150B at a position higher than the 1 st upper surface 150A of the 1 st protective film 151; a 1 st terminal electrode 161 electrically connected to the upper electrode 140 through the 1 st through hole CH11 and provided to extend at least to the 2 nd upper surface 150B of the 2 nd protective film 152; and a 2 nd terminal electrode 162 electrically connected to the lower electrode 120 through the 2 nd through hole CH12 and provided to extend at least to the 2 nd upper surface 150B of the 2 nd protective film 152.

According to the above aspect, the surface areas of the 1 st terminal electrode and the 2 nd terminal electrode can be enlarged without enlarging the area of the 1 st terminal electrode and the 2 nd terminal electrode when viewed from the normal direction of the 1 st upper surface of the 1 st protective film. Therefore, the film capacitor can be improved in adhesion to the solder without increasing its size. In other words, the mountability of the film capacitor can be improved. In addition, the terminal electrode extends on the side surface of the protective film, so that the solder can be formed into a fillet shape. Therefore, the disturbance of the mounting posture of the film capacitor can be suppressed, and the contact with other elements and wirings can be suppressed. According to the above, it is possible to suppress the falling off of the film capacitor due to an impact such as dropping and the deterioration of the performance of the film capacitor due to interference with other elements and the like. In other words, improvement in reliability of the thin film capacitor can be achieved.

The thickness H2 of the 2 nd protective film 152 may be greater than the height H1 of the 1 st through hole CH 11. Accordingly, the surface areas of the 1 st terminal electrode and the 2 nd terminal electrode can be further enlarged, and the adhesion force between the solder and the terminal electrodes can be improved.

The thickness H2 of the 2 nd protective film 152 may be 2 times or more and 20 times or less the height H1 of the 1 st through hole CH 11. Accordingly, the surface areas of the 1 st terminal electrode and the 2 nd terminal electrode are increased, whereby the mountability of the thin film capacitor can be improved, and the increase in size of the thin film capacitor can be suppressed.

The thickness H2 of the 2 nd protective film 152 may be 0.2 times or more and 2 times or less the length W2 of the 1 st terminal electrode 161 or the 2 nd terminal electrode 162 in the direction in which the 1 st through hole CH11 and the 2 nd through hole CH12 are aligned when the 1 st upper surface 150A of the 1 st protective film 151 is viewed in plan. Accordingly, the surface areas of the 1 st terminal electrode and the 2 nd terminal electrode are increased, whereby the mountability of the thin film capacitor can be improved, and the increase in size of the thin film capacitor can be suppressed.

The 2 nd protective film 152 may be provided in a region between the 1 st through hole CH11 and the 2 nd through hole CH12 on the 1 st upper surface 150A of the 1 st protective film 151. Accordingly, the solder contacting the 1 st terminal electrode and the solder contacting the 2 nd terminal electrode are separated by the 2 nd protective film formed between the 1 st terminal electrode and the 2 nd terminal electrode. Therefore, short-circuiting between the solder in contact with the 1 st terminal electrode and the solder in contact with the 2 nd terminal electrode can be suppressed.

The 2 nd protective film 452 may be further provided in a region outside the region between the 1 st through hole CH41 and the 2 nd through hole CH42 in the 1 st upper surface 450A of the 1 st protective film 451. Accordingly, the surface area of the 1 st terminal electrode can be further increased, and thus the adhesion between the 1 st terminal electrode and the solder can be improved. In addition, the 2 nd protective film can prevent the solder from wetting and spreading to the outside of the film capacitor. This can suppress disturbance of the mounting posture.

The 2 nd protective film 352 may have side surfaces 350C and 350D that are inverted from the 1 st upper surface 350A toward the 2 nd upper surface 350B. This can further increase the surface area of the 1 st terminal electrode and the 2 nd terminal electrode. In addition, the bonding strength between the thin film capacitor and the solder can be improved by the anchor effect.

The 1 st protective film 251 and the 2 nd protective film 252 may be integrally formed. Accordingly, the manufacturing process of the film capacitor can be simplified, and the manufacturing cost can be reduced.

The 1 st protective film 151 and the 2 nd protective film 152 may be formed independently. Accordingly, the processing accuracy of determining the positions and dimensions of the 1 st through hole and the 2 nd through hole, the positions of the 1 st upper surface and the 2 nd upper surface, and the like can be improved.

In a plan view of the 1 st upper surface 450A of the 1 st protective film 451, the 1 st terminal electrode 461 and the 2 nd terminal electrode 462 may be provided at a distance from the outer edge of the 1 st upper surface 450A in a direction intersecting the direction in which the 1 st through holes CH41 and the 2 nd through holes CH42 are arranged. Accordingly, the excessive solder at the time of mounting wets and spreads in the direction crossing the arrangement direction of the terminal electrodes along the 1 st upper surface 450A, and thus the mounting posture of the thin film capacitor can be stabilized.

According to another aspect of the present invention, there is provided a method of manufacturing a thin film capacitor, including: a step of providing a lower electrode 1020; a step of providing a dielectric film 1030 covering the lower electrode 1020; a step of providing an upper electrode 1040 on the dielectric film 1030 so as to face the lower electrode 1020; a step of providing a 1 st protective film 1051, in which the 1 st protective film 1051 is provided on the dielectric film 1030 and the upper electrode 1040, and has a 1 st upper surface 1050A defining the height of the 1 st through hole CH101 and the 2 nd through hole CH102, in which a 1 st through hole CH101 for opening the upper electrode 1040 and a 2 nd through hole CH102 for opening the lower electrode 1020 are formed, respectively; a step of providing a 2 nd protective film 1052 having a 2 nd upper surface 1050B located higher than the 1 st upper surface 1050A of the 1 st protective film 1051, the 2 nd protective film 1052 being provided partially in a region seen in a plan view of the 1 st upper surface 1050A of the 1 st protective film 1051; and a step of providing a 1 st terminal electrode 1061 and a 2 nd terminal electrode 1062, in which the 1 st terminal electrode 1061 and the 2 nd terminal electrode 1062 are electrically connected to the lower electrode 1020 and the upper electrode 1040 through the 1 st through hole CH101 and the 2 nd through hole CH102, respectively, and extend to at least the 2 nd upper surface 1050B of the 2 nd protective film 1052.

According to the above aspect, a thin film capacitor that can obtain the same effects as described above can be manufactured.

As described above, according to one embodiment of the present invention, a thin film capacitor capable of improving reliability can be provided.

The embodiments described above are for easy understanding of the present invention, and are not intended to be construed as limiting the present invention. The present invention may be modified/improved without departing from the gist thereof, and the present invention also includes equivalents thereof. That is, the embodiment to which design changes are appropriately made by those skilled in the art is included in the scope of the present invention as long as the features of the present invention are provided. For example, the elements provided in the embodiments, and the arrangement, materials, conditions, shapes, sizes, and the like thereof are not limited to those exemplified, and can be appropriately changed. The elements included in the embodiments may be combined as long as they are technically possible, and the combination of these embodiments is also included in the scope of the present invention as long as the features of the present invention are included.

Description of the reference numerals

100 … film capacitors; 110 … a substrate; 111 … semiconductor substrate; 112 … an insulating layer; 120 … lower electrode; 130 … dielectric film; 140 … upper electrode; 150 … step-shaped protective film; 151 … th protective film; 152 …, No. 2 protective film; 150a …, upper surface No. 1; 150B … upper surface No. 2; 150C, 150D … side; CH11 … 1 st through hole; CH12 … No. 2 through holes; 161 … 1 st terminal electrode; 162 … terminal No. 2 electrode; h1, H2 … height; w1, W2 … width.