阅读说明：本技术 一种半导体热电材料的制造方法 (Method for manufacturing semiconductor thermoelectric material ) 是由 闫一方 于 2019-10-24 设计创作，主要内容包括：本发明提供一种半导体热电材料的制造方法,涉及热电材料技术领域。该半导体热电材料的制造方法,包括以下步骤：S1.按照比例选取钛粉、锆粉、铋粉与锑粉,然后将钛粉、锆粉、铋粉与锑粉在搅拌装置中搅拌均匀；S2.将钛粉、锆粉、铋粉与锑粉投入到铸浆炉中进行高温铸浆,在铸浆过程中加入适量的添加剂；S3.铸浆完成之后,将熔浆置于成型模具中,利用挤压设备对其进行挤压成型,挤压成型过程在真空环境中进行。通过使用钛粉、锆粉、铋粉与锑粉作为材料,以及加入适量的添加剂,使得高温半导体热电材料的制作过程中可以大批量的进行生产,并且大大提高了半导体热电材料的性能,从而让半导体热电材料的使用更加稳定。(The invention provides a method for manufacturing a semiconductor thermoelectric material, and relates to the technical field of thermoelectric materials. The manufacturing method of the semiconductor thermoelectric material comprises the following steps: s1, selecting titanium powder, zirconium powder, bismuth powder and antimony powder according to a proportion, and then uniformly stirring the titanium powder, the zirconium powder, the bismuth powder and the antimony powder in a stirring device; s2, putting titanium powder, zirconium powder, bismuth powder and antimony powder into a slurry casting furnace for high-temperature slurry casting, and adding a proper amount of additives in the slurry casting process; and S3, after the slurry casting is finished, placing the molten slurry in a forming die, and carrying out extrusion forming on the molten slurry by using extrusion equipment, wherein the extrusion forming process is carried out in a vacuum environment. By using titanium powder, zirconium powder, bismuth powder and antimony powder as materials and adding a proper amount of additives, the high-temperature semiconductor thermoelectric material can be produced in large batch in the manufacturing process, and the performance of the semiconductor thermoelectric material is greatly improved, so that the semiconductor thermoelectric material is more stable to use.)

1. A method for manufacturing a semiconductor thermoelectric material, characterized in that: the method comprises the following steps:

s1, selecting titanium powder, zirconium powder, bismuth powder and antimony powder according to a proportion, and then uniformly stirring the titanium powder, the zirconium powder, the bismuth powder and the antimony powder in a stirring device;

s2, putting titanium powder, zirconium powder, bismuth powder and antimony powder into a slurry casting furnace for high-temperature slurry casting, and adding a proper amount of additives in the slurry casting process;

s3, after the slurry casting is finished, placing the molten slurry in a forming die, carrying out extrusion forming on the molten slurry by using extrusion equipment, carrying out the extrusion forming process in a vacuum environment, and after the forming is finished, introducing nitrogen into the vacuum environment to carry out air cooling on the formed block;

and S4, after the block is cooled to room temperature, taking out the block and sending the block into a sintering furnace for final sintering treatment, and taking out the block after sintering is finished and cooling the block to obtain the semiconductor thermoelectric material.

2. The method of manufacturing a semiconductor thermoelectric material according to claim 1, wherein: the casting temperature of the casting slurry furnace is 1500-2000 ℃, and the casting slurry time is 3-5 hours.

3. The method of manufacturing a semiconductor thermoelectric material according to claim 1, wherein: the titanium powder, the zirconium powder, the bismuth powder and the antimony powder are composed of the following components in percentage by weight: 10-12 parts of titanium powder, 15-25 parts of zirconium powder, 20-30 parts of bismuth powder and 22-28 parts of antimony powder.

4. The method of manufacturing a semiconductor thermoelectric material according to claim 1, wherein: the additive is composed of boric acid, citric acid, sodium citrate, sodium chloride, antimony chloride, thiourea and tartaric acid, and the weight ratio of the components of the additive is as follows: 1-2 parts of boric acid, 1.5-2.5 parts of citric acid, 2-3 parts of sodium citrate, 2-2.4 parts of sodium chloride, 3-4 parts of antimony chloride, 0.02-0.04 part of thiourea and 0.2-0.3 part of tartaric acid.

5. The method of manufacturing a semiconductor thermoelectric material according to claim 1, wherein: the sintering temperature is 600-800 ℃, and the sintering time is 6-8 hours.

Technical Field

The invention relates to the technical field of thermoelectric materials, in particular to a manufacturing method of a semiconductor thermoelectric material.

Background

The semiconductor thermoelectric material is a semiconductor material with large thermoelectric effect, also called thermoelectric material, which can directly convert heat energy into electric energy or directly produce refrigeration action from electric energy, and can be used for preparing thermoelectric generator, and can be used for preparing various semiconductor thermoelectric refrigerators, such as various small-sized freezers, thermostats, dew point thermometers and electronic devices.

At present, the variety and manufacturing method of alloy semiconductor thermoelectric materials are many, and the alloy semiconductor thermoelectric materials can be widely applied to various fields, but in the manufacturing process of high-temperature semiconductor thermoelectric materials, the mass production process is troublesome, and the performance of the semiconductor thermoelectric materials needs to be further improved.

Disclosure of Invention

Technical problem to be solved

Aiming at the defects of the prior art, the invention provides a manufacturing method of a semiconductor thermoelectric material, which solves the problems that the mass production process is troublesome and the performance of the semiconductor thermoelectric material needs to be further improved in the manufacturing process of the high-temperature semiconductor thermoelectric material.

(II) technical scheme

In order to achieve the purpose, the invention is realized by the following technical scheme: a method of manufacturing a semiconductor thermoelectric material, comprising the steps of:

s1, selecting titanium powder, zirconium powder, bismuth powder and antimony powder according to a proportion, and then uniformly stirring the titanium powder, the zirconium powder, the bismuth powder and the antimony powder in a stirring device;

s2, putting titanium powder, zirconium powder, bismuth powder and antimony powder into a slurry casting furnace for high-temperature slurry casting, and adding a proper amount of additives in the slurry casting process;

s3, after the slurry casting is finished, placing the molten slurry in a forming die, carrying out extrusion forming on the molten slurry by using extrusion equipment, carrying out the extrusion forming process in a vacuum environment, and after the forming is finished, introducing nitrogen into the vacuum environment to carry out air cooling on the formed block;

and S4, after the block is cooled to room temperature, taking out the block and sending the block into a sintering furnace for final sintering treatment, and taking out the block after sintering is finished and cooling the block to obtain the semiconductor thermoelectric material.

Preferably, the slurry casting temperature of the slurry casting furnace is 1500-2000 ℃, and the slurry casting time is 3-5 hours.

Preferably, the titanium powder, the zirconium powder, the bismuth powder and the antimony powder are composed of the following components in percentage by weight: 10-12 parts of titanium powder, 15-25 parts of zirconium powder, 20-30 parts of bismuth powder and 22-28 parts of antimony powder.

Preferably, the additive is composed of boric acid, citric acid, sodium citrate, sodium chloride, antimony chloride, thiourea and tartaric acid, and the weight ratio of the components of the additive is as follows: 1-2 parts of boric acid, 1.5-2.5 parts of citric acid, 2-3 parts of sodium citrate, 2-2.4 parts of sodium chloride, 3-4 parts of antimony chloride, 0.02-0.04 part of thiourea and 0.2-0.3 part of tartaric acid.

Preferably, the sintering temperature is 600-800 ℃, and the sintering time is 6-8 hours.

(III) advantageous effects

The invention provides a method for manufacturing a semiconductor thermoelectric material. The method has the following beneficial effects:

according to the manufacturing method of the semiconductor thermoelectric material, titanium powder, zirconium powder, bismuth powder and antimony powder are used as materials, and a proper amount of additive is added, so that the high-temperature semiconductor thermoelectric material can be produced in a large batch in the manufacturing process, the performance of the semiconductor thermoelectric material is greatly improved, and the semiconductor thermoelectric material is more stable to use.

Detailed Description

The following will clearly and completely describe the technical solutions in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.