阅读说明：本技术 具有改善的抗老化性的电子设备 (Electronic device with improved aging resistance ) 是由 杰罗姆·乔梅尔 埃里克·福平 于 2018-05-11 设计创作，主要内容包括：本发明涉及一种电子设备(50),其包含：基板(12)；覆盖基板的不透氧不透水的第一保护层(52)；至少一个位于第一保护层上并包含至少一个有机半导体区域的电子元件(18)；不透氧不透水的封装层(66),其包含环氧胶或丙烯酸酯胶,完全覆盖有机半导体区域；完全覆盖封装层的不透氧不透水的第二保护层(64)；和覆盖第二保护层的支撑层(62)。(The invention relates to an electronic device (50) comprising: a substrate (12); a first protective layer (52) covering the substrate, the first protective layer being impermeable to oxygen and water; at least one electronic component (18) located on the first protective layer and comprising at least one organic semiconductor region; an oxygen-impermeable, water-impermeable encapsulant layer (66) comprising an epoxy glue or an acrylate glue, completely covering the organic semiconductor region; a second protective layer (64) that is impermeable to oxygen and water and completely covers the encapsulation layer; and a support layer (62) covering the second protective layer.)

1. An electronic apparatus (50; 70; 80; 100) comprising:

a substrate (12);

a first oxygen-tight and water-tight protective layer (52) covering the substrate;

at least one electronic component (18) located on the first protective layer and comprising at least one organic semiconductor region (86, 88, 90; 106);

an insulating parylene layer (72) covering the electronic component;

an oxygen-tight water encapsulation layer (66) comprising an epoxy glue or an acrylate glue completely covering the organic semiconductor region, the insulating layer being located between the encapsulation layer and the electronic component;

a second oxygen-tight water-tight protective layer (64) completely covering the encapsulation layer; and

a support layer (62) overlying the second protective layer.

2. The electronic device as claimed in claim 1, wherein the substrate (12) and/or the support layer (62) comprise a plastic layer, in particular made of polyethylene naphthalate (PEN), polyethylene terephthalate (PET), Polyimide (PI), cellulose Triacetate (TAC), cyclic olefin Copolymer (COP), Polyetheretherketone (PEEK) or a mixture of these compounds.

3. An electronic device as claimed in claim 1 or 2, wherein the first and second protective layers (52, 64) each comprise at least one layer of an inorganic material selected from the group consisting of silicon nitride, aluminum oxide, silicon oxide and mixtures of at least two of these compounds.

4. The electronic device of any of claims 1-3, wherein the encapsulation layer (66) further extends between the first and second protective layers (52, 64) around the electronic element (18).

5. The electronic device of any of claims 1-4, wherein a thickness of the encapsulation layer (66) on the electronic element (18) is in a range of 1 μm to 50 μm.

6. The electronic device of any of claims 1-5, wherein the first protective layer (52) and/or the second protective layer (64) has a thickness in a range of 10nm to 500 nm.

7. The electronic device of any of claims 1-6, wherein the electronic element (18) comprises an organic photodiode, an organic light emitting diode, or an organic transistor.

8. The electronic device of any of claims 1-7, wherein the electronic component (18) comprises:

first and second electrodes (82, 84) extending over the first protective layer (52);

a first interfacial layer (86) extending at least partially over the first electrode;

an organic active region (88) extending at least partially over the first interface layer (86);

a second interface layer (90) extending at least partially over the active region (88), the encapsulation layer (66) completely covering the second interface layer and the active region.

9. The electronic device of claim 8, wherein the electronic element (18) is capable of emitting or capturing electromagnetic radiation, and wherein the active region (88) is a region in which a majority of the electromagnetic radiation provided by the optoelectronic element is emitted or in which a majority of the conversion of electromagnetic radiation received by the optoelectronic element into electrical signals occurs.

10. A method of manufacturing an electronic device (50; 70; 80; 100), comprising the following successive steps:

a) forming a substrate (12) covered with a first oxygen-tight and water-tight protective layer (52);

b) forming at least one electronic component (18) on the first protective layer, the electronic component comprising at least one organic semiconductor region (86, 88, 90; 106) and an insulating parylene layer (72) covering the electronic component; and

c) a support layer (62) covered with a second oxygen-tight water-tight protective layer (64) is glued on the electronic element (18) on the second protective layer side by an oxygen-tight water-tight encapsulation layer (66) comprising an epoxy glue or an acrylate glue, completely covering the organic semiconductor region, the insulating layer being located between the encapsulation layer and the electronic element.

11. The method of claim 10, wherein step c) comprises the following successive steps:

depositing a precursor of a material of an encapsulation layer (66) over at least a portion of the electronic component (18);

applying a support layer (62) covered with a second protective layer (64) on the precursor on the side of the second protective layer; and

the precursor is crosslinked.

Background

The present application relates to an electronic device comprising at least one organic electronic element and a method for manufacturing the same.

Disclosure of Invention

Drawings

The foregoing and other features and advantages will be discussed in detail in the following non-limiting description of specific embodiments, taken in conjunction with the accompanying drawings, in which:

FIG. 1 is a cross-sectional view of an embodiment of an electronic device including an organic electronic element;

fig. 2 shows variation curves of an illumination current and a dark current of the organic photodiode of the electronic device having the structure shown in fig. 1.

FIG. 3 is a cross-sectional view of an embodiment of an electronic device comprising an organic electronic element;

fig. 4 shows a variation curve of an illumination current and a dark current of the organic photodiode of the electronic device having the structure shown in fig. 3.

FIG. 5 is a cross-sectional view of another embodiment of an electronic device comprising an organic electronic element;

FIG. 6 shows a more detailed embodiment of a photovoltaic device comprising an organic photodiode; and

fig. 7 shows a more detailed embodiment of a photovoltaic device comprising an organic transistor.

It is an object of embodiments to overcome all or part of the disadvantages of known electronic devices comprising at least one organic electronic element.