阅读说明：本技术 一种薄膜晶体管及其制造方法、阵列基板 (Thin film transistor, manufacturing method thereof and array substrate ) 是由 陈方 于 2019-10-09 设计创作，主要内容包括：本发明提出一种薄膜晶体管及其制造方法、阵列基板,涉及显示面板领域,薄膜晶体管包括：金属氧化物层,包括被源漏金属层覆盖且未被导体化的第一部分、以及与第一部分连接且被导体化的第二部分；源漏金属层,位于所述第一部分的上方且与第二部分接触并形成一条接触边；绝缘层,覆盖源漏金属层和金属氧化物层,所述绝缘层在第二部分上方设有接触孔,所述第二部分通过接触孔被导体化；其中,所述接触边的形状为多齿形,所述源漏金属层与第二部分之间的接触长度为所述接触边的总长度。通过改变源漏金属层与导体化的金属氧化物层的接触边的形状来增加接触边的总长度,可以有效的减小接触电阻。(The invention provides a thin film transistor, a manufacturing method thereof and an array substrate, and relates to the field of display panels, wherein the thin film transistor comprises: a metal oxide layer including a first portion covered with the source-drain metal layer and not made conductive, and a second portion connected to the first portion and made conductive; the source-drain metal layer is positioned above the first part, is in contact with the second part and forms a contact edge; the insulating layer covers the source drain metal layer and the metal oxide layer, a contact hole is formed above the second part of the insulating layer, and the second part is conducted through the contact hole; the contact edge is in a multi-tooth shape, and the contact length between the source drain metal layer and the second part is the total length of the contact edge. The total length of the contact edge is increased by changing the shape of the contact edge of the source drain metal layer and the conductive metal oxide layer, so that the contact resistance can be effectively reduced.)

1. A thin film transistor body, comprising:

a metal oxide layer including a first portion covered with the source-drain metal layer and not made conductive, and a second portion connected to the first portion and made conductive;

the source-drain metal layer is positioned above the first part, is in contact with the second part and forms a contact edge;

the insulating layer covers the source drain metal layer and the metal oxide layer, a contact hole is formed above the second part of the insulating layer, and the second part is made into a conductor through the contact hole;

the contact edge is in a multi-tooth shape, and the contact length between the source drain metal layer and the second part is the total length of the contact edge.

2. The thin film transistor according to claim 1, wherein the poly-tooth shape is a wave shape or a zigzag shape or a comb shape.

3. The thin film transistor of claim 1, wherein the denser the multi-castellated castellation is, the longer the total length of the contact edge is, and the smaller the contact resistance between the source-drain metal layer and the second portion is.

4. The thin film transistor according to claim 1 or 2, wherein a material of the metal oxide layer is indium gallium zinc oxide.

5. The thin film transistor according to claim 1 or 2, further comprising a gate electrode and a gate insulating layer, wherein the gate insulating layer is located above the gate electrode, and wherein the metal oxide is located above the gate insulating layer.

6. An array substrate comprising the thin film transistor according to any one of claims 1 to 5.

7. A method of manufacturing a thin film transistor, for manufacturing a thin film transistor according to any one of claims 1 to 5, comprising the steps of:

s1: forming a metal oxide layer;

s2: forming a source drain metal layer on the partial metal oxide layer;

s3: forming an insulating layer covering the metal oxide layer and the source drain metal layer, wherein the insulating layer is provided with a contact hole exposing part of the metal oxide layer;

s4: ion implantation is performed in the contact hole so that a part of the metal oxide layer forms a second portion which is made conductive and a contact edge having a multi-tooth shape.