Method for forming semiconductor device
阅读说明:本技术 半导体装置的形成方法 (Method for forming semiconductor device ) 是由 杨建勋 林立德 于 2019-07-16 设计创作,主要内容包括:形成气隙间隔物于半导体装置中的方法,包括提供装置,其含有栅极堆叠、多个间隔物层位于栅极堆叠的侧壁上、以及源极/漏极结构与栅极堆叠相邻。在一些实施例中,移除间隔物层的第一间隔物层,以形成气隙于栅极堆叠的侧壁上。在多种例子中,接着沉积第一密封层于气隙的顶部上以形成密封的气隙,并沉积第二密封层于第一密封层上。之后采用第一蚀刻制程,自源极/漏极结构上蚀刻第一自对准接点层。在多种实施例中,第一蚀刻制程选择性地蚀刻第一自对准接点层,而第一密封层与第二密封层维持未蚀刻。(A method of forming an air gap spacer in a semiconductor device includes providing a device having a gate stack, a plurality of spacer layers on sidewalls of the gate stack, and a source/drain structure adjacent the gate stack. In some embodiments, a first spacer layer of the spacer layers is removed to form air gaps on sidewalls of the gate stack. In various examples, a first sealing layer is then deposited on top of the air gap to form a sealed air gap, and a second sealing layer is deposited on the first sealing layer. A first etching process is then used to etch the first self-aligned contact layer from the source/drain structure. In various embodiments, the first etch process selectively etches the first self-aligned contact layer while the first encapsulation layer and the second encapsulation layer remain unetched.)
1. A method of forming a semiconductor device, comprising:
providing a device comprising a gate stack, a plurality of spacer layers on a sidewall of the gate stack, and a source/drain structure adjacent the gate stack;
removing a first spacer layer of the spacer layers to form an air gap on the sidewall of the gate stack;
depositing a first sealing layer on top of the air gap to form a sealed air gap; and
a first self-aligned contact layer is etched from the source/drain structure using a first etch process, wherein the first etch process selectively etches the first self-aligned contact layer while the first sealing layer remains unetched.
Technical Field
Embodiments of the present invention relate to methods of forming air gap spacers, and more particularly, to methods of improving etch selectivity of different dielectric materials.
Background
The electronics industry has experienced a growing need for smaller and faster electronic devices that simultaneously support more and more complex functions. In view of the foregoing, there is a continuing trend in the semiconductor industry to form integrated circuits with low cost, high performance, and low power consumption. The primary approach to achieving these goals is to reduce the size of the semiconductor integrated circuit (e.g., the minimum feature size), thereby improving throughput and reducing associated costs. However, the reduction in size also increases the complexity of the semiconductor formation process. Similar advances in the processes and techniques for forming semiconductors are needed to implement the continuing advances in semiconductor integrated circuits and devices.
Recently introduced multi-gate devices have increased gate-to-channel coupling, reduced off-state current, and reduced short channel effects to improve gate control. One of these multi-gate devices is a finfet. Finfet devices are known by the name of fin structures extending from and formed on a substrate, which may be used to form channels for field effect transistors. The finfet is compatible with existing cmos processes and its three-dimensional structure allows for a significant reduction in size while maintaining gate control and mitigating short channel effects. However, even with the introduction of finfets, the significant size reduction of integrated circuits still results in increased parasitic capacitance (e.g., between the gate of the finfet and the source/drain regions or source/drain contacts). The parasitic capacitance increase degrades device performance. The prior art is therefore not fully satisfactory in all respects.
Disclosure of Invention
A method for forming a semiconductor device according to an embodiment of the present invention includes: providing a device comprising a gate stack, a plurality of spacer layers on sidewalls of the gate stack, and a source/drain structure adjacent the gate stack; removing a first spacer layer of the spacer layer to form air gaps on sidewalls of the gate stack; depositing a first sealing layer on top of the air gap to form a sealed air gap; and etching the first self-aligned contact layer from the source/drain structure using a first etching process, wherein the first etching process selectively etches the first self-aligned contact layer while the first sealing layer remains unetched.
A method for forming a semiconductor device according to an embodiment of the present invention includes: removing the spacer layer from the sidewalls of the finfet gate stack to form air gaps on the sidewalls of the finfet gate stack; conformably depositing a plurality of sealing layers on top of the air gap to form a sealed air gap; and performing a first atomic layer etching process to remove the silicon nitride layer from the source/drain adjacent to the finfet gate stack, wherein the first atomic layer etching process selectively etches the silicon nitride layer while the sealing layer remains unetched.
An embodiment of the present invention provides a semiconductor device, including: a gate stack on the first fin region, wherein a spacer layer is on a first sidewall of the gate stack; a source/drain contact metal on a second fin region adjacent to the first fin region, wherein the second fin region includes a source/drain structure, wherein a liner layer is on a second sidewall of the source/drain contact metal, and wherein the first sidewall and the second sidewall are opposite each other; an air gap spacer positioned between the spacer layer and the pad layer; and a plurality of sealing layers incorporated on top of the air gap spacers to seal and protect the air gap spacers.
Drawings
Fig. 1 is a perspective view of a finfet device in accordance with one or more embodiments of the invention.
Figure 2 is a flow chart of a method of fabricating a semiconductor device including air gap spacers in some embodiments.
Fig. 3-13 are cross-sectional views along planes substantially parallel to section AA' of fig. 1 of an exemplary device fabricated according to one or more steps of the method of fig. 2.
Fig. 14A-14D illustrate a first cycle of an exemplary atomic layer etch process flow, in some embodiments.
Fig. 15A-15D illustrate second through nth cycles of an exemplary atomic layer etch process flow, in some embodiments.
Wherein the reference numerals are as follows:
AA' section
Height H1, H2
T1, T2, T3 thickness
Width of W1
100 finfet device
102 substrate
104. 302 fin
105 source region
106 isolation region
107 drain region
108 grid structure
110. 304 gate dielectric layer
112. 306, 502 metal layer
200 method
202. 204, 206, 208, 210, 212, 214, 216, 218, 220
300. 1400 apparatus
308 first spacer layer
310 second spacer layer
310A etched back second spacer layer
312 epitaxial source/drain structures
314 silicide layer
316 metal contact layer
316A etched back metal contact layer
318 liner layer
318A etched back liner layer
320. 1402 first self-aligned contact layer
402 chemical mechanical polishing process
702 air gap
702A air gap spacer
802 first sealing layer
First sealing layer of 802A etch-back
902 second sealing layer
902A etched back second encapsulation layer
1102. 1408 second self-aligned contact layer
1202 source/drain contact opening
1302 gate contact opening
1404. 1406 sealing layer
1410 spacer layer
1412 hydrogen plasma surface modification process
1414. 1514 surface modification layer
1414A, 1414B, 1414C, 1414D region
1416 fluorine plasma process
1420 etching byproduct layer
Detailed Description
The different embodiments or examples provided below may implement different configurations of the present invention. The following embodiments of specific components and arrangements are provided to simplify the present disclosure and not to limit the same. For example, the description of forming a first element on a second element includes embodiments in which the two are in direct contact, or embodiments in which the two are separated by additional elements other than direct contact. On the other hand, the same reference numbers may be repeated for various embodiments of the invention to simplify the description, but elements having the same reference numbers in various embodiments and/or arrangements do not necessarily have the same correspondence.
Furthermore, spatially relative terms such as "below," "lower," "above," "upper," or the like may be used for ease of description to refer to a relationship of one element to another in the figures. Spatially relative terms may be extended to elements used in other orientations than the orientation illustrated. The elements may also be rotated 90 or other angles, and directional terminology is used herein for purposes of illustration only.
It is noted that embodiments of the present invention relate to multi-gate transistors or fin-shaped multi-gate transistors, which may be referred to herein as finfet devices. Such a device may include a p-type metal oxide semiconductor fin field effect transistor device or an n-type metal oxide semiconductor fin field effect transistor device. The finfet device may be a double-gate device, a triple-gate device, a bulk device, a semiconductor-on-insulator device, and/or other arrangements. It should be understood by those skilled in the art that the embodiments of the present invention are also advantageous for other embodiments of semiconductor devices. For example, some embodiments described herein may also be used for fully-wrapped-gate devices, omega-gate devices, or Π -gate devices.
Fig. 1 shows a
The
Each of plurality of
The
The
However, forming high quality air gap spacers remains challenging. For example, as part of the process of forming the air gap spacers, one or more sealing layers may be formed over the air gap adjacent to the gate spacers to seal the air gap spacers. In some examples, a porous low dielectric constant material (e.g., silicon oxycarbide) may serve as the sealing layer. In addition, a portion of the self-aligned contact process flow or the dual self-aligned contact etch process flow requires etching of a dielectric layer (e.g., silicon nitride, zirconium oxide, or other dielectric layer) to expose underlying contacts (e.g., source/drain or gate contacts) without damaging the previously formed sealing layer or adjacent air gap spacers. In other words, it is desirable to provide a process for etching a dielectric layer (e.g., silicon nitride, zirconium oxide, or the like) that has a high etch selectivity with respect to an air gap seal (e.g., a low-k material such as voids). For illustrative purposes, high etch selectivity is defined as a selectivity greater than or equal to about 12.
At least some existing dielectric layer etching processes, such as silicon nitride etching processes, do not achieve high etch selectivity of the dielectric layer relative to the low-k material of the via. For example, in some instances with existing chemistries for etching silicon nitride, the rate of etching low dielectric constant materials (e.g., silicon oxycarbide) for the holes may be too fast. For example, at least some existing chemistries for etching silicon nitride include methane fluoride and hydrogen, methane fluoride and oxygen, or methane fluoride and argon. Generally, etching plasmas using these etch chemistries etch low dielectric constant materials (e.g., silicon oxycarbide) that are porous, in addition to silicon nitride. Thus, the control margin for protecting the low dielectric constant material (e.g., silicon oxycarbide) of the via from etching by the silicon nitride etching plasma is narrow. Furthermore, since the sealing layer functions to seal air gaps, any loss of the sealing layer (such as loss of low dielectric constant material from voids) must be limited to within a few nanometers. If the seal layer is lost too much, the seal will be broken and the air gap will be damaged. In some instances, because of the low selectivity of silicon nitride to silicon oxycarbide in some conventional etching processes, the thickness of the dielectric layer (e.g., silicon nitride) and the porous low-k material (e.g., silicon oxycarbide) may need to be increased to ensure a sufficient device gate height. However, increasing the device gate height corresponds to increasing the aspect ratio, making the previous polysilicon etch and cleaning processes more difficult to perform, thereby creating etch residues, bending or collapsing the polysilicon lines, and generally degrading device performance. In addition, the subsequent chemical mechanical polishing process may require additional polishing depth to achieve proper device planarity. In some instances, these additional CMP and associated layer loss may effectively reduce gate height. Generally, as technology continues to advance, smaller critical dimensions and higher aspect ratios do not allow for the existing process tolerances for low etch selectivity (e.g., low etch selectivity for silicon nitride versus silicon oxycarbide) while maintaining the desired gate height. The prior art does not fully meet all of these needs.
Embodiments of the invention provide many more advantages than the prior art, but it is understood that other embodiments may provide different advantages, all of which need not be described herein, and all of which need not have a particular advantage. For example, embodiments described herein include structures and methods for providing air gap spacers (e.g., protected with a multi-layer encapsulant material) that may reduce the dielectric constant of the spacers and improve device performance. In particular, the embodiments described herein provide methods for forming high quality air gap spacers, which may be part of a dual self-contact process flow, as described in more detail below. In some embodiments, a first encapsulation layer and a second encapsulation layer may be formed over the air gaps adjacent to the device gate structure to seal the air gap spacers. A sealing layer may be incorporated over the air gap to provide a sealed air gap spacer. As described above, a porous low dielectric constant material (e.g., silicon oxycarbide) may be used to form the first and/or second sealing layers. In addition, embodiments of the present invention, as part of a dual self-contact process flow, may provide a process for etching a dielectric layer (e.g., silicon nitride, zirconium oxide, or the like) with a high (e.g., greater than 12) etch selectivity of the dielectric layer with respect to a first and second air gap sealing layer (e.g., silicon oxycarbide). Thus, various embodiments avoid exposing and/or damaging the air gap and minimize gate height loss.
In some embodiments, the high etch selectivity etch process employs a hydrogen modified atomic layer etch process to improve etch selectivity. Generally, an atomic layer etch process may be used to accurately remove an atomic layer of material and comprises a series of steps alternating between a self-limiting chemical surface modification step and an etch step that removes a chemically modified surface region. By providing such a self-limiting surface modification and etching step, the atomic layer etching process can provide more accurate etch control and etch selectivity than the reactive ion etching process. In various embodiments described herein, a hydrogen-modified atomic layer etch silicon nitride etch process may be used to improve the etch selectivity of silicon nitride relative to silicon oxycarbide. For example, the etching process of atomic layer etching consists of two steps: (1) modifying the surface of the silicon nitride and silicon oxycarbide surface by hydrogen plasma; and (2) removing the surface modification layer on the silicon nitride by fluorine radical etching and leaving the surface modification layer on the silicon oxycarbide surface (which may be referred to as an etch stop layer). In some examples, the cleaning step may be performed after the surface modification, the etching step, or both. In some examples, the removal process of the atomic layer etch may provide a high etch selectivity of the self-aligned contact material (e.g., silicon nitride) relative to the low-k spacer material of the via (e.g., silicon oxycarbide), thereby providing a wider etch process window in the dual self-aligned contact etch process. In addition, various embodiments may be processed at higher pressures to achieve high etch selectivity (e.g., greater than 25) for the sealing layer of zirconia relative to silicon oxycarbide and silicon nitride. In some instances, the higher pressure facilitates removal of the sidewall step because the additional boron can form volatile zirconium oxychloride and remove the step of the zirconium oxide.
In addition, the silicon nitride etching process (with high etching selectivity) of the present invention is stopped on the zirconia, which can enhance and enlarge the process tolerance of the dual self-aligned contact etching. Thus, some embodiments may reduce the self-aligned contact silicon nitride layer height, thereby reducing the total gate height required for the front-end etch and/or polysilicon cleaning process and providing wider etch process control. In many cases, the etch selectivity of silicon nitride in atomic layer etching makes silicon nitride a good self-aligned contact material in the silicon nitride etch process for dual self-aligned contacts and the breakdown etch process for silicon nitride. In addition, the high etch selectivity of silicon nitride relative to the sealing layer (e.g., silicon oxycarbide) helps to ensure that the sealing layer does not break during the process of etching the self-aligned contact and to ensure that the air gap spacers are not damaged. In addition, the high etch selectivity of silicon nitride to the low dielectric constant silicon oxycarbide sealing layer of the via also reduces the silicon nitride height requirement of the self-aligned contact, resulting in a reduction in the overall gate height and aspect ratio. In some embodiments, an atomic layer etch silicon nitride etch process provides silicon nitride with high etch selectivity relative to the zirconium oxide material of the self-aligned contact and widens the tolerance of the dual self-aligned contact etch process. Various embodiments provide lower gate height requirements, improve process margins for front-end etching and polysilicon cleaning, reduce etch residues, and reduce polysilicon line collapse and bowing problems, thereby providing greater etch process margins during middle-end etching. Therefore, the yield can be effectively improved. Additional embodiments and advantages will be described below and/or will be apparent to those skilled in the art from the description of the embodiments.
Fig. 2 illustrates, in one or more embodiments, a
It is understood that portions of the
In various embodiments, the
A beginning step 202 of the
In some embodiments, the
The
After the CMP process (step 204), step 206 of the
The
After the process of etching back the sidewalls (step 208), step 210 of the
Step 212 of
Step 214 of
After depositing the second encapsulant layer (step 214), step 216 of the
The
After the deposition and CMP processes of step 218, step 220 of the
As shown in fig. 11 and 13, other embodiments of step 220 may perform a second process of etching self-aligned contacts to target gate regions of device 300 (e.g., gate regions on a gate stack including a
Subsequent processing of the
FIGS. 14A-14D and 15A-15D illustrate exemplary atomic layer etch process flows. For example, the first process of etching self-aligned contacts and/or the second process of etching self-aligned contacts may be employed at step 220 of
The
In the first step of the atomic layer etch process flow, a hydrogen plasma surface modification process 1412 (fig. 14A) may be performed, which may employ a hydrogen plasma to form a surface modification 1414 (fig. 14B). As shown, the surface modification layer 1414 may be comprised of different regions 1414A, 1414B, 1414C, and 1414D, defined by the materials of the upper surface of the
In some embodiments, the excited hydrogen gas is exposed to the nitrogen of the silicon nitride layer (e.g., the silicon nitride layer of the second self-aligned contact layer 1408), which may form ammonia by-products in the surface modification layer 1414 and weaken the bonds in the silicon nitride layer. For example, as the attraction of hydrogen-nitrogen bonds pulls nitrogen atoms away from silicon atoms, silicon-nitrogen bond length (such as in a silicon nitride layer) may be increased and silicon-nitrogen bond energy may be decreased to increase the etch rate during a subsequent fluorine plasma process, as described below. In some embodiments, the depth and/or thickness of surface modifying layer 1414 is at least partially dependent on the gas and plasma power used to form the plasma. In the case of a hydrogen plasma, the thickness T3 of surface modifying layer 1414 may be adjusted to be between about 7nm and 20nm, depending on the underlying material layer. In various examples, the hydrogen plasma penetrates to a greater depth than the argon plasma or the helium plasma. In particular, a higher power and lower plasma pressure hydrogen plasma may provide a deeper upgrading depth (compared to an argon plasma or a helium plasma). As described above, the thickness of the surface modified layer 1414 in the different regions 1414A, 1414B, 1414C, and 1414D may be different to correspond to different underlying material layers. In some examples, the thickness of the surface modification layer 1414 in the region 1414C is greater than the thickness of the surface modification layer 1414 in the regions 14144a, 1414B, and 1414D. The thickness of the surface modification layer 1414 in the regions 1414B and 1414D is greater than the thickness of the surface modification layer 1414 in the region 1414A.
In the second step of the atomic layer etch process flow, a fluorine plasma process may be performed to remove the surface modification layer 1414 in the region 1414C (e.g., to remove the surface modification layer 1414 from the silicon nitride layer of the second self-aligned contact layer 1408), and to leave the surface modification layer 1414 on the other regions 1414A, 1414B, and 1414D (e.g., on the zirconia surface of the first self-aligned
Fig. 14C also shows the
After the first cycle of the atomic layer etching process flow (as described above with reference to fig. 14A to 14D), the second to nth cycles of the atomic layer etching process flow may be performed, as shown in fig. 15A to 15D. As described above, repeating the etching process cycle of the atomic layer etching partially achieves a high etch selectivity of silicon nitride or zirconium oxide with respect to the low dielectric constant spacer material (e.g., silicon oxycarbide) of the via. As shown in fig. 15A, the hydrogen plasma surface modification process 1412 may be performed once more, such as by treating the surface of the silicon nitride and silicon oxycarbide with hydrogen plasma to form an additional surface modification layer 1514 (see fig. 15B), and/or to enlarge the surface modification layer 1414 that existed before. It is noted that in some embodiments, the surface modification layer 1514 may also be comprised of different regions, which may be similar to the different regions of the surface modification layer 1414 described above. After forming the additional surface modification layer 1514 or expanding the pre-existing surface modification layer 1414, a fluorine plasma process 1416 may be performed to remove the surface modification layer 1514 from the silicon nitride layer (e.g., the silicon nitride layer of the second self-aligned contact layer 1408) and leave the surface modification layer 1514 and/or the surface modification layer 1414 on other regions of the device 1400 (including the silicon oxycarbide surfaces of the sealing
In other words, as shown in fig. 15A-15D, the hydrogen plasma surface modification process 1412 and the fluorine plasma process 1416 may be repeated to remove the silicon nitride layer, and the critical process control includes maintaining a thicker surface modification layer (e.g., surface modification layers 1514 and/or 1414) on the first self-aligned
The various embodiments described herein may therefore provide various advantages over the prior art. It is to be understood that not necessarily all advantages will be described herein, that not necessarily all embodiments may have a particular advantage, and that other embodiments may provide different advantages. For example, embodiments described herein include methods and structures for providing air gap spacers with multiple encapsulation layers to protect the air gap spacers, which may reduce the dielectric constant of the spacers and improve device performance. In some embodiments, a first encapsulation layer and a second encapsulation layer may be formed over the air gaps adjacent to the device gate structure to seal the air gap spacers. In some examples, a porous low dielectric constant material (e.g., silicon oxycarbide) may be used to form the plurality of sealing layers. In addition, embodiments of the present invention provide an etch process (e.g., an atomic layer etch process) for a dielectric layer (e.g., silicon nitride, zirconium oxide, or the like) having a high etch selectivity (e.g., greater than 12) relative to a plurality of sealing layers (e.g., silicon oxycarbide) as part of a dual self-aligned contact etch process flow. Thus, various embodiments of the present invention may avoid exposing and/or damaging the air gap and minimize gate height loss. Additional embodiments and advantages will be apparent to those skilled in the art from consideration of the specification.
Thus, one illustrative method of forming a semiconductor device according to embodiments of the present invention includes providing a device including a gate stack, a plurality of spacer layers on sidewalls of the gate stack, and a source/drain structure adjacent the gate stack. In some embodiments, a first spacer layer of the spacer layers is removed to form air gaps on sidewalls of the gate stack. In various embodiments, a first sealing layer is then deposited on top of the air gap to form a sealed air gap. A first etching process is then used to etch the first self-aligned contact layer from the source/drain structure. In various embodiments, the first etch process selectively etches the first self-aligned contact layer while the first sealing layer remains unetched.
In some embodiments, the method further comprises: depositing a second sealing layer on the first sealing layer; and etching the first self-aligned contact layer from the source/drain structure using a first etching process, wherein the first etching process selectively etches the first self-aligned contact layer while the second sealing layer remains unetched.
In some embodiments, the first etch process is an atomic layer etch process comprising (i) a hydrogen plasma process that forms a surface modification layer on and reacts with the first self-aligned contact layer; and (ii) a fluorine plasma process to remove the surface modification layer from the first self-aligned contact layer and to remove at least a portion of the first self-aligned contact layer, wherein the hydrogen plasma process and the fluorine plasma process are repeated for N cycles to remove the first self-aligned contact layer from the source/drain structure.
In some embodiments, the device further comprises a metal contact layer formed on the source/drain structure and providing an electrical contact to the source/drain structure, and the method further comprises: performing an etch-back process on the metal contact layer to form an etched-back metal contact layer; and forming a selectively deposited metal layer on the etched back metal contact layer.
In some embodiments, the metal contact layer comprises cobalt and the selectively deposited metal layer comprises tungsten.
In some embodiments, the method further comprises performing an etch back process on the first spacer layer prior to removing the first spacer layer.
In some embodiments, the method further comprises: performing an etch-back process of the sealing layer to expose an upper surface of the selectively deposited metal layer before etching the first self-aligned contact layer from the source/drain structure; and depositing a first self-aligned contact layer on the source/drain structure.
In some embodiments, the device further comprises a second self-aligned contact layer on the gate stack, and the method further comprises: a second self-aligned contact layer is etched from the gate stack using a second etch process, wherein the second etch process selectively etches the second self-aligned contact layer while the first sealing layer remains unetched.
In some embodiments, the first self-aligned contact layer comprises silicon nitride and the second self-aligned contact layer comprises zirconium oxide.
In some embodiments, the first sealing layer and the second sealing layer comprise a porous low dielectric constant material.
In some embodiments, the low dielectric constant material of the hole comprises silicon oxycarbide.
In some embodiments, the etch selectivity of the first self-aligned contact layer relative to the first encapsulation layer is greater than 12.
In another embodiment, a method of forming a semiconductor device includes: the spacer layer is removed from the sidewalls of the finfet gate stack to form air gaps on the sidewalls of the finfet gate stack. In some embodiments, a plurality of sealing layers are conformably deposited on top of the air gap to form a sealed air gap. In some examples, a first atomic layer etch process is performed to remove a silicon nitride layer from source/drain regions adjacent to a finfet gate stack. The first atomic layer etching process selectively etches the silicon nitride layer while the sealing layer remains unetched.
In some embodiments, the first atomic layer etching process includes (i) a hydrogen plasma process that forms a surface modification layer on and reacts with the silicon nitride layer; and (ii) a fluorine plasma process for removing the surface modified layer from the silicon nitride layer and removing at least a portion of the silicon nitride layer, wherein the hydrogen plasma process and the fluorine plasma process are repeated for N cycles to remove the silicon nitride layer from the source/drain.
In some embodiments, the method further comprises: before forming the air gap, a selectively deposited tungsten layer is formed on the cobalt layer, wherein the cobalt layer is deposited on the source/drain and provides an electrical contact to the source/drain.
In some embodiments, the method further comprises depositing a silicon nitride layer on the selectively deposited tungsten layer prior to performing the first atomic layer etch process.
In some embodiments, the method further comprises: a second atomic layer etching process is performed to remove the zirconium oxide layer from the finfet gate stack, wherein the second atomic layer etching process selectively etches the zirconium oxide layer while the sealing layer remains unetched.
In some embodiments, one or more of the sealing layers comprises silicon oxycarbide.
In yet another embodiment, a semiconductor device includes: a gate stack on the first fin region, wherein a spacer layer is on a first sidewall of the gate stack. In some embodiments, the source/drain contact metal is on a second fin region adjacent to the first fin region, wherein the second fin region includes a source/drain structure, wherein the liner layer is on a second sidewall of the source/drain contact metal, and wherein the first sidewall and the second sidewall are opposite each other. In some examples, an air gap spacer located between the spacer layer and the liner layer; and a plurality of sealing layers incorporated on top of the air gap spacers to seal and protect the air gap spacers.
In some embodiments, the gate stack includes a metal layer having a height between about 30nm and 40nm, the air gap spacer has a height between about 25nm and 35nm, and the sealing layer has a thickness between about 5nm and 10 nm.
The features of the above-described embodiments are helpful to those skilled in the art in understanding the present invention. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. It should also be understood by those skilled in the art that these equivalent substitutions and alterations can be made without departing from the spirit and scope of the present invention, and that these changes, substitutions and alterations can be made without departing from the spirit and scope of the present invention.
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