阅读说明：本技术 一种蓝宝石晶片清洗剂及其制备方法 (sapphire wafer cleaning agent and preparation method thereof ) 是由 秦俊 于 2019-10-17 设计创作，主要内容包括：本发明属于宝石晶片加工技术领域,具体涉及一种蓝宝石晶片清洗剂及其制备方法。所述蓝宝石晶片清洗剂包括以下质量份组分：二氧化硅35-48份、乙醚38-44份、壳聚糖8-15份、聚乙二醇7-11份、二硼化钛8-14份、甘油11-15份、炭黑6-7份、椰子油6-9份、茶树油1-3.5份、表面活性剂4-7份、去离子水150-180份。本发明制备得到的清洁剂可祛除蓝宝石基片表面颗粒、金属离子和有机物残留等研磨、抛光过程中留下来的残留物,清洗后无任何可见杂物残留,且本发明的制备方法简单有效,对环境友好,适合工业化生产。(The invention belongs to the technical field of sapphire wafer processing, and particularly relates to sapphire wafer cleaning agents and a preparation method thereof.)

The sapphire wafer cleaning agent is characterized by comprising, by mass, 35-48 parts of silicon dioxide, 38-44 parts of diethyl ether, 8-15 parts of chitosan, 7-11 parts of polyethylene glycol, 8-14 parts of titanium diboride, 11-15 parts of glycerol, 6-7 parts of carbon black, 6-9 parts of coconut oil, 1-3.5 parts of tea tree oil, 4-7 parts of a surfactant and 180 parts of deionized water.

2. The sapphire wafer cleaning agent as claimed in claim 1, comprising the following components, by mass, 42 parts of silicon dioxide, 42 parts of diethyl ether, 13 parts of chitosan, 8 parts of polyethylene glycol, 12 parts of titanium diboride, 13 parts of glycerol, 6 parts of carbon black, 7 parts of coconut oil, 2.5 parts of tea tree oil, 6 parts of surfactant and 170 parts of deionized water.

3. The sapphire wafer cleaning agent as claimed in claim 1, comprising the following components, by mass, 44 parts of silicon dioxide, 40 parts of diethyl ether, 14 parts of chitosan, 9 parts of polyethylene glycol, 12 parts of titanium diboride, 13 parts of glycerol, 6 parts of carbon black, 8 parts of coconut oil, 2 parts of tea tree oil, 6 parts of surfactant and 160 parts of deionized water.

4. The method for preparing kinds of sapphire wafer cleaning agent as defined in claim 1, comprising the steps of, , weighing raw materials;

secondly, grinding the silicon dioxide, the carbon black, the chitosan and the titanium diboride to obtain a nano mixture with the particle size of less than or equal to 50 nm;

and thirdly, dissolving the nano mixture in deionized water, heating to 30-50 ℃, stirring for 10-20 minutes, then adding diethyl ether, polyethylene glycol, glycerol, coconut oil, tea tree oil and a surfactant, and continuously stirring for 30-50 minutes to prepare the sapphire wafer cleaning agent.

5. The method for preparing kinds of sapphire wafer cleaning agents, as claimed in claim 4, wherein the third step is dissolving the nano mixture in deionized water and heating to 45 ℃, stirring for 15 minutes, adding ether, polyethylene glycol, glycerin, coconut oil, tea tree oil and surfactant, and stirring for 40 minutes to obtain the sapphire wafer cleaning agent.

Technical Field

The invention belongs to the technical field of sapphire wafer processing, and particularly relates to sapphire wafer cleaning agents and a preparation method thereof.

Background

The sapphire is single crystal materials with good light transmission and heat conductivity, and meanwhile, because the sapphire has excellent temperature resistance (the melting point is as high as 2200 ℃) and ultrahigh hardness (the Mohs hardness is as high as 9.0, and is only inferior to the diamond with the hardness of 10), the sapphire single crystal is commonly used for a guidance window of a missile in the military industry, a precision instrument panel surface, a surface of a high-grade watch and the like, and the sapphire needs grinding, polishing and other processes in the production and processing process, diamond liquid and the like can be used in the grinding process, polishing liquid and the like can be used in the polishing process, and heavy oil pollution diamond liquid can be remained on the surface and in a groove of the sapphire touch screen after the shape processing and the surface polishing.

Disclosure of Invention

Aiming at the defects of the prior art, the invention provides sapphire wafer cleaning agents and a preparation method thereof, the cleaning agent prepared by the invention can remove residues left in grinding and polishing processes of sapphire substrate surface particles, metal ion, organic matter residues and the like, and no visible impurity residue is left after cleaning.

sapphire wafer cleaning agents comprise, by mass, 35-48 parts of silicon dioxide, 38-44 parts of diethyl ether, 8-15 parts of chitosan, 7-11 parts of polyethylene glycol, 8-14 parts of titanium diboride, 11-15 parts of glycerol, 6-7 parts of carbon black, 6-9 parts of coconut oil, 1-3.5 parts of tea tree oil, 4-7 parts of a surfactant and 150 parts of deionized water.

Preferably, the sapphire wafer cleaning agent comprises the following components in parts by mass: 42 parts of silicon dioxide, 42 parts of diethyl ether, 13 parts of chitosan, 8 parts of polyethylene glycol, 12 parts of titanium diboride, 13 parts of glycerol, 6 parts of carbon black, 7 parts of coconut oil, 2.5 parts of tea tree oil, 6 parts of surfactant and 170 parts of deionized water.

Preferably, the sapphire wafer cleaning agent comprises the following components in parts by mass: 44 parts of silicon dioxide, 40 parts of diethyl ether, 14 parts of chitosan, 9 parts of polyethylene glycol, 12 parts of titanium diboride, 13 parts of glycerol, 6 parts of carbon black, 8 parts of coconut oil, 2 parts of tea tree oil, 6 parts of surfactant and 160 parts of deionized water.

The preparation method of sapphire wafer cleaning agents comprises the following steps:

, weighing raw materials;

secondly, grinding the silicon dioxide, the carbon black, the chitosan and the titanium diboride to obtain a nano mixture with the particle size of less than or equal to 50 nm;

and thirdly, dissolving the nano mixture in deionized water, heating to 30-50 ℃, stirring for 10-20 minutes, then adding diethyl ether, polyethylene glycol, glycerol, coconut oil, tea tree oil and a surfactant, and continuously stirring for 30-50 minutes to prepare the sapphire wafer cleaning agent.

Preferably, the third step is as follows: dissolving the nano mixture in deionized water, heating to 45 ℃, stirring for 15 minutes, then adding diethyl ether, polyethylene glycol, glycerol, coconut oil, tea tree oil and surfactant, and continuing stirring for 40 minutes to prepare the sapphire wafer cleaning agent.

In order to achieve the purpose, the invention is realized by the following technical scheme:

compared with the prior art, the invention has the following beneficial effects:

1. the cleaning agent prepared by the invention can remove residues left in grinding and polishing processes of sapphire substrate surface particles, metal ion, organic matter residues and the like, and no visible sundries are left after cleaning;

2. the preparation method is simple and effective, is environment-friendly and is suitable for industrial production;

Detailed Description

The present invention is described in further detail in by the following detailed description, however, it will be understood by those skilled in the art that the following examples are illustrative only and should not be construed as limiting the scope of the present invention.