阅读说明：本技术 在低k材料、铜、钴和/或钨层存在下选择性蚀刻硬掩模和/或蚀刻终止层的组合物和方法 (Compositions and methods for selectively etching hard masks and/or etch stop layers in the presence of low-k materials, copper, cobalt, and/or tungsten layers ) 是由 J·T·V·霍格博姆 A·克里普 柯志正 王哲伟 C·C·汀 于 2020-05-20 设计创作，主要内容包括：描述了清洁组合物与一种或多种氧化剂组合的用途,用于从半导体衬底表面除去蚀刻后或灰化后的残余物和/或用于氧化性蚀刻或部分氧化性蚀刻包含选自TiN、Ta、TaN、Al和HfOx的材料或由其组成的层或掩模和/或包含选自碳化钨(WC-(x))和氮化钨(WN-(x))的材料或由其组成的层或掩模,和/或用于从半导体衬底表面除去包含铝化合物的层。进一步描述了所述清洁组合物和所述清洁组合物用于从半导体衬底表面除去蚀刻后或灰化后的残余物的用途。在另一方面,描述了一种包含所述清洁组合物和一种或多种氧化剂的湿蚀刻组合物以及所述湿蚀刻组合物的用途。还描述了由半导体衬底制造半导体器件的方法和包含所述清洁组合物和一种或多种氧化剂的成套包装。(The use of a cleaning composition in combination with one or more oxidizing agents for removing post-etch or post-ash residues from the surface of a semiconductor substrate and/or for the oxidative or partially oxidative etching of a layer or mask comprising or consisting of a material selected from TiN, Ta, TaN, Al and HfOx and/or comprising a material selected from tungsten carbide (WC) is described x ) And tungsten nitride (WN) x ) And/or for removing a layer comprising an aluminium compound from the surface of a semiconductor substrate. Further described are the cleaning compositions and the use of the cleaning compositions for removing post-etch or post-ash residues from semiconductor substrate surfaces. In another aspect, a wet etching composition comprising the cleaning composition and one or more oxidizing agents and use of the wet etching composition are described. Also described are methods of manufacturing semiconductor devices from semiconductor substrates and kits comprising the cleaning compositions and one or more oxidizing agents.)