阅读说明：本技术 一种单轴分步切割晶圆的加工工艺方法 (Processing method for single-shaft step-by-step cutting wafers ) 是由 唐辉 于 2019-10-28 设计创作，主要内容包括：本发明涉及一种单轴分步切割晶圆的加工工艺方法,包括：在切割设备上预先输入晶圆的厚度,设定第一次切割晶圆的深度和低速移动切割速度；设定第二次切割晶圆的深度和快速移动切割速度；按设定对晶圆进行第一次切割；按设定对晶圆进行第二次切割,以使晶圆被切割分离成若干芯片颗粒。本发明改善了单轴切割情况下晶圆颗粒的切割品质,使芯片颗粒在应用时的功能品质更加稳定,能够更好地满足需求。(The invention relates to a processing method for single-shaft step-by-step cutting of wafers, which comprises the steps of inputting the thickness of a wafer in advance on a cutting device, setting the depth and the low-speed moving cutting speed of cutting the wafer times, setting the depth and the high-speed moving cutting speed of cutting the wafer for the second time, cutting the wafer times according to the setting, and cutting the wafer for the second time according to the setting so as to cut and separate the wafer into a plurality of chip particles.)

1, processing method of single-shaft step-by-step cutting wafer, which is characterized by comprising the following steps:

inputting the thickness of the wafer in advance on a cutting device, and setting the depth and the low-speed moving cutting speed of the th cut wafer;

setting the depth and the fast moving cutting speed of the wafer to be cut for the second time;

th cutting is carried out on the wafer according to the setting;

and performing second cutting on the wafer according to the setting so that the wafer is cut and separated into a plurality of chip particles.

2. The process of uniaxial step-and-dice wafers according to claim 1, wherein the wafer has a thickness of 50-200 μm.

3. The processing method of uniaxial step-cut wafers as claimed in claim 2, wherein the wafer cut is 2/3 the depth of the wafer thickness, and the low speed moving cutting speed is 10-20 mm/s.

4. The processing method of uniaxial step-cut wafers according to claim 3, wherein the depth of the second cut wafer is 1/3% of the wafer thickness, and the fast moving cutting speed is 20-40 mm/s.

5. The method for processing wafers by single-axis step-by-step cutting as claimed in claim 1, wherein in the step of " cuts to wafer as set", after cuts are completed, the cutting device lifts the cutting blade to perform moving cutting speed adjustment, and the cutting blade is adjusted from low-speed moving cutting speed to high-speed moving cutting speed.

6. The process of single-axis step-and-break wafers of claim 5, wherein said cutting blade is a diamond blade.

Technical Field

The invention relates to the technical field of wafer cutting, in particular to a processing method for single-shaft step-by-step cutting of wafers.

Background

In the current packaged and cut products on a single-shaft cutting machine, is directly cut through for 1 time, but the problems that 1, the direct cut through is carried out for 1 time according to the thickness of a wafer, the stress on the cutting blade and the surface of the wafer is large, the front protection layer or TEG of a wafer cutting path is easy to be separated, so that the quality problem is caused, 2, the direct cut through is carried out for 1 time according to the thickness of the wafer, the back collapse and the side collapse which are not up to the standard are easy to be caused due to the stress during the rotary cutting of a cutting knife, so that the stability function quality problem of the product is caused, and 3, for wafers with larger thickness, the direct cut through is also subjected to the stress under the high rotation, so that the blade is deformed.

Disclosure of Invention

The invention aims to overcome the defects of the prior art and provides processing methods for single-shaft step-by-step cutting of wafers.

In order to achieve the purpose, the invention adopts the following technical scheme:

A processing method of single-shaft step-by-step cutting of wafers comprises the following steps:

inputting the thickness of the wafer in advance on a cutting device, and setting the depth and the low-speed moving cutting speed of the th cut wafer;

setting the depth and the fast moving cutting speed of the wafer to be cut for the second time;

th cutting is carried out on the wafer according to the setting;

and performing second cutting on the wafer according to the setting so that the wafer is cut and separated into a plurality of chip particles.

The technical scheme of the step is that the thickness of the wafer is 50-200 μm.

The technical scheme of the step is that the depth of th time of cutting the wafer is 2/3 of the thickness of the wafer, and the low-speed moving cutting speed is 10-20 mm/s.

The step is that the depth of the second cutting is 1/3 of the thickness of the wafer, and the fast moving cutting speed is 20-40 mm/s.

The technical scheme of the step is that in the step of cutting the wafer times according to the setting, after times of cutting is finished, the cutting equipment lifts the cutting blade to adjust the moving cutting speed, and the cutting speed of the cutting blade is adjusted from the low-speed moving cutting speed to the high-speed moving cutting speed.

The technical scheme of step is that the cutting blade is a diamond blade.

Compared with the prior art, the invention has the beneficial effects that: the cutting quality of the wafer particles under the condition of single-axis cutting is improved, so that the functional quality of the chip particles is more stable when the chip particles are applied, and the requirements can be better met.

The invention is further described with reference to the figures and the specific embodiments.

Drawings

In order to more clearly illustrate the technical solution of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on the drawings without creative efforts.

Fig. 1 is a schematic flow chart of a processing method for single-axis step-by-step dicing of a wafer according to an embodiment of the present invention.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all embodiments of the present invention.

It will be understood that the terms "comprises" and/or "comprising," when used in this specification and the appended claims, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of or more other features, integers, steps, operations, elements, components, and/or groups thereof.

As used in this specification and the appended claims, the singular forms "", "" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.

It should also be further understood that the term "and/or" as used in this specification and the appended claims refers to and includes any and all possible combinations of or more of the associated listed items.

Referring to the embodiment shown in fig. 1, the invention discloses processing methods for single-axis step-by-step dicing of wafers, comprising the following steps:

s1, inputting the thickness of the wafer in advance on the cutting equipment, and setting the depth and the low-speed moving cutting speed of the th time cut wafer;

s2, setting the depth and the fast moving cutting speed of the wafer for the second time;

s3, cutting the wafer times according to the setting;

and S4, performing second cutting on the wafer according to the setting so that the wafer is cut and separated into a plurality of chip particles.

In this embodiment, the thickness of the wafer is 50 μm to 200 μm.

The depth of the th wafer cutting is 2/3 of the thickness of the wafer, the low-speed moving cutting speed is 10-20 mm/s, the front stress of the wafer is reduced, the risk of the protective layer or TEG separation is reduced, and the problem of the front quality of the wafer is avoided.

, during the dicing process, the protection layer material of the dicing streets will be automatically ground away during the dicing process, so that the dicing process will not affect the backside collapse.

The depth of the wafer cut for the second time is 1/3 (the residual thickness of the wafer after times of cutting), the fast moving cutting speed is 20-40 mm/s, so that the stress on the back of the wafer is reduced in the process of cutting for the second time, and the side/back collapse is controlled within 1/3 thickness of the wafer to achieve standard control.

Wherein, in this embodiment, the cutting apparatus is a single-axis cutting machine.

In the step of performing th cutting on the wafer according to the setting, after th cutting is completed, the cutting equipment lifts the cutting blade, performs moving cutting speed adjustment, adjusts the cutting blade from a low-speed moving cutting speed to a high-speed moving cutting speed, and then puts down the cutting blade to prepare for second cutting.

In the embodiment, the cutting blade is a diamond blade, is fast and efficient, and is not easy to deform.

The invention is mainly used for a single-shaft cutting machine and a cutting process for improving side chipping and back chipping, not only provides a wafer packaging single-shaft cutting process, but also improves the cutting yield of single-shaft equipment, optimizes and improves the cutting quality of wafer particles under the condition of single-shaft cutting, and optimizes front chipping, side chipping and back chipping of the cut wafer at different wafer cutting thicknesses and speeds so as to reach the control standard, so that the functional quality of chip particles in application is more stable, and the requirements can be better met.

The technical content of the present invention is further illustrated by way of example only for the convenience of the reader, but it is not intended that the embodiments of the present invention be limited thereto, and any technical extension or re-creation based on the present invention shall be protected by the present invention.